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US20170133291A1 - Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component - Google Patents

Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component Download PDF

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Publication number
US20170133291A1
US20170133291A1 US15/319,281 US201515319281A US2017133291A1 US 20170133291 A1 US20170133291 A1 US 20170133291A1 US 201515319281 A US201515319281 A US 201515319281A US 2017133291 A1 US2017133291 A1 US 2017133291A1
Authority
US
United States
Prior art keywords
semiconductor module
encapsulating compound
module according
semiconductor
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/319,281
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English (en)
Inventor
Ronald Eisele
Anton-Zoran MIRIC
Frank Krüger
Wolfgang Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Deutschland GmbH and Co KG
Original Assignee
Heraeus Deutschland GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Deutschland GmbH and Co KG filed Critical Heraeus Deutschland GmbH and Co KG
Assigned to Heraeus Deutschland GmbH & Co. KG reassignment Heraeus Deutschland GmbH & Co. KG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SCHMITT, WOLFGANG, KRUGER, FRANK, EISELE, RONALD, Miric, Anton-Zoran
Publication of US20170133291A1 publication Critical patent/US20170133291A1/en
Abandoned legal-status Critical Current

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Classifications

    • H10W74/43—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H10W40/255—
    • H10W40/259—
    • H10W40/43—
    • H10W40/47—
    • H10W74/121—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H10W40/22—
    • H10W72/5363—
    • H10W72/551—
    • H10W72/651—
    • H10W72/871—
    • H10W72/884—
    • H10W72/886—
    • H10W74/00—
    • H10W90/734—
    • H10W90/754—
    • H10W90/764—

Definitions

  • the invention relates to a semiconductor module comprising an encapsulating compound that covers at least one semiconductor component.
  • the encapsulation of individual semiconductors and semiconductor sub-assemblies (including passive components) on substrates is effected nowadays by means of organic masses based, for example, on epoxy resin, with, in some cases, inorganic filling materials, such as silicon dioxide (SiO 2 ).
  • inorganic filling materials such as silicon dioxide (SiO 2 ).
  • U.S. Pat. No. 4,529,755 discloses an encapsulating compound of this type comprising a poly-functional epoxy compound, a styrene-type block copolymer, a curing agent for the epoxy compound, and an inorganic filling agent.
  • Said encapsulated components and sub-assemblies typically have electrical connectors and cooling connection surfaces for the integrated power components.
  • ceramic substrates with cores made of aluminum oxide, aluminum nitride or silicon nitride are predominantly used as interconnect devices.
  • U.S. Pat. No. 7,034,660 B2 discloses a wireless sensor that is embedded in concrete or any other cement-containing material in order to detect parameters that are indicative of changes in construction materials.
  • the sensor can, for example, be an electrochemical sensor that is well-suited for detecting chloride ions.
  • a semiconductor module ( 10 ) comprising a ceramic interconnect device ( 50 ) bearing at least one semiconductor device ( 20 ); the ceramic is selected from the group consisting of ceramics based on aluminum oxide, aluminum nitride or silicon nitride.
  • the at least one semiconductor device ( 20 ) is covered by an encapsulating compound ( 30 ), characterized in that the, encapsulating compound ( 30 ) comprises a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K.
  • FIG. 1 shows the schematic design of a semiconductor module ( 10 ) according to the invention according to a first exemplary embodiment, in which the encapsulating compound ( 30 ) is provided as glob-top;
  • FIG. 2 shows the schematic design of a semiconductor module ( 10 ) according to a second exemplary embodiment, which, except for the mechanical-electrical contact leads, is fully encapsulated by the encapsulating compound ( 30 );
  • FIG. 3 shows the schematic design of a semiconductor module ( 10 ) according to a third exemplary embodiment with cooling elements ( 80 a, 80 b ) for air cooling being arranged on both sides of the semiconductor ( 20 );
  • FIG. 4 shows the schematic design of a semiconductor module ( 10 ) according to a fourth exemplary embodiment with cooling elements ( 80 a, 80 b ) for water cooling being arranged on both sides of the semiconductor ( 20 ); and
  • FIG. 5 shows the schematic design of a semiconductor module ( 10 ) according to a fifth exemplary embodiment with a cooling element for air cooling ( 80 c ) being arranged on one side of the semiconductor ( 20 ) and a cooling element for water cooling ( 80 b ) being arranged on the other side of the semiconductor ( 20 ).
  • the semiconductor module ( 10 ) is a common semiconductor module that comprises a ceramic interconnect device (ceramic substrate) ( 50 ) bearing one or more semiconductor component(s) ( 20 ).
  • the semiconductor device or devices ( 20 ) is/are a semiconductor that develops significant heat during its intended use due to power dissipation, i.e., which reaches self-destroying temperatures of, for example, 150 to >200° C. in the absence of encasing and encapsulation, as are used in power electronic sub-assemblies, in particular the semiconductor component or components ( 20 ) are not sensors or measuring probes.
  • the ceramic of the interconnect device ( 50 ) is a ceramic selected from the group of ceramics based on aluminum oxide, aluminum nitride or silicon nitride. In other words, it is a ceramic with a 95 to 100% by weight fraction of aluminum oxide, aluminum nitride or silicon nitride.
  • the encapsulating compound ( 30 ) is an essentially or fully inorganic metal-free material. It has a thermal expansion coefficient in the range of 2 to 10 ppm/K.
  • the encapsulating compound ( 30 ) comprises a cured inorganic cement.
  • the encapsulating compound ( 30 ) consists of a cured inorganic cement or it comprises one or more ingredients aside from the cured inorganic cement that forms a matrix.
  • the ingredients are preferred to be electrically non-conductive.
  • the cured inorganic cement forming the matrix of the encapsulating compound ( 30 ) or the encapsulating compound ( 30 ) as such has a thermal expansion coefficient in the range of 2 to 10 ppm/K.
  • the cured inorganic cement can be formed by mixing a powdered mixture of inorganic binding agent and inorganic additives with water to form a pourable mass, pouring the pourable mass thus formed, followed by setting and drying the poured mass.
  • the powdered mixture of inorganic binding agent and inorganic additives can be a phosphate cement that is known to a person skilled in the art, for example, preferably, magnesium phosphate cement, in particular magnesium oxide- and zirconium silicate-containing magnesium phosphate cement.
  • a phosphate cement that is known to a person skilled in the art, for example, preferably, magnesium phosphate cement, in particular magnesium oxide- and zirconium silicate-containing magnesium phosphate cement.
  • the product marketed by the name of ZIRCON POTTING CEMENT NO. 13 by Sauereisen is one example of such materials.
  • the above-mentioned potting of the pourable mass formed by mixing a suitable powdered mixture of inorganic binding agent and inorganic additives with water can take place by methods known to a person skilled in the art, for example by gravity- or pressure-driven potting. It can be expedient in this context to surround the component and/or sub-assembly to be encased with half-shell molds and to then fill these with the pourable mass. After setting and drying, the encapsulated component and/or encapsulated sub assembly can be taken out after the half shells are opened.
  • the potting can take place, for example, such that the encapsulating compound ( 30 ) is formed as “glob-top” known to a person skilled in the art.
  • the encapsulating compound ( 30 ) partially or fully encapsulates electrical contacting elements ( 40 ) that are connected to the semiconductor component ( 20 ), such as, for example, bond wires, ribbons and/or leadframes.
  • Partial encapsulation shall be understood to mean that one or more of the contacting elements ( 40 ) are incompletely encapsulated and/or one or more of the contacting elements ( 40 ) are not encapsulated, whereas full encapsulation shall be understood to mean that all contacting elements ( 40 ) are fully encapsulated.
  • the setting and drying take place for, for example, 30 to 120 minutes in a temperature range of 20 to 120° C.
  • the inorganic cement is cured during the setting and drying.
  • the encapsulating compound ( 30 ) can consist of the cured inorganic cement or can comprise one or more ingredients aside from the cured inorganic cement that serves as a matrix.
  • the further ingredient or ingredients of the pourable mass shall be added before the potting, i.e., shall be admixed before and/or after the addition of water.
  • the further ingredient or ingredients can just as well be admixed to the powdered mixture of inorganic binding agent and inorganic additives before mixing them with water to form a pourable mass, or the admixture can take place after the addition of water.
  • ingredients the encapsulating compound ( 30 ) can comprise aside from the cured inorganic cement include aluminum nitride particles, boron nitride particles, aluminum oxide particles and/or silicon nitride particles at a total volume fraction of, for example, 25 to 90% by volume, relative to the volume of the encapsulating compound ( 30 ).
  • suitable aluminum nitride particles include those with a mean particle size (d50), as determined by laser diffraction, in the range of 0.8 to 11 ⁇ m, which are distributed commercially, for example, by H.C. Starck.
  • the encapsulating compound ( 30 ) can comprise aside from the cured inorganic cement include fibers, i.e., the encapsulating compound ( 30 ) can comprise, one or more different types of fibers.
  • the fraction of fibers can be in the range of up to 20% by volume, preferably can be in the range of 10 to 20% by volume.
  • fibers that can be used include inorganic fibers, such as glass fibers, basalt fibers, boron fibers, and ceramic fibers, for example silicon carbide fibers and aluminum oxide fibers, as well as high-melting organic fibers, such as, for example, aramid fibers.
  • the presence of these fibers in the encapsulating compound ( 30 ) has a beneficial effect on its tensile strength and thermal fatigue resistance.
  • all surfaces contacting the encapsulating compound ( 30 ) are not coated, but rather provided with an adhesive coating layer (primer layer), for example with a coating layer applied, for example by spray application, from a polyacrylate dispersion.
  • an adhesive coating layer for example with a coating layer applied, for example by spray application, from a polyacrylate dispersion.
  • the encapsulating compound ( 30 ) can comprise some residual porosity, which is the reason for a moisture-resistant coat to be provided in one embodiment.
  • the capillaries can be filled by low viscosity protective masses, which permanently seal the capillaries.
  • aqueous solutions of potassium or lithium silicates are well-suited for this purpose. It is feasible just as well to coat the outer surface of the encapsulating compound ( 30 ) with a protective layer that is not or hardly penetrated by moisture.
  • coating agents based on curable epoxy resins can be used for this purpose
  • the encapsulating compound ( 30 ) to bond physically enables preferred heat conduction from the semiconductor, which is subject to power dissipation, via the encapsulating compound ( 30 ) to a cooling element ( 80 ).
  • This can be either one-sided or—originating from the semiconductor ( 20 )—multi-sided.
  • the encapsulating compound ( 30 ) preferably represents a heat bridge that establishes the thermal path to one or more, in particular metallic, cooling elements ( 80 ), made, for example, from aluminum or copper.
  • FIG. 1 shows a semiconductor module ( 10 ), preferably designed as a sub-assembly for power electronics, with a semiconductor component ( 20 ) that is covered by an encapsulating compound ( 30 ).
  • the bond wires contacting the semiconductor device ( 20 ) are also covered and or encapsulated by the encapsulating compound ( 30 ), at least in part, but particularly preferably completely.
  • the semiconductor component ( 20 ) is attached on a ceramic interconnect device ( 50 ) which, in turn, is applied to the upper side of a heat dissipation plate ( 70 ) whose underside is connected to a cooling element ( 80 ).
  • the semiconductor module ( 10 ) comprises a frame ( 60 ) as support of electrical contacts that are routed towards the outside.
  • the coaching mass ( 30 ) is provided simply as a droplet (“glob-top”) that covers/encapsulates the semiconductor component ( 20 ) and its bond wires ( 40 ).
  • the “glob-top” and the other surface regions of the semiconductor module ( 10 ) are covered by an insulating mass ( 90 ), for example a silicone gel.
  • FIG. 2 shows a semiconductor module ( 10 ) designed according to a second exemplary embodiment to have a frame-less design, which, except for the electrical and thermal contact surfaces, is fully encapsulated by the encapsulating compound ( 30 ).
  • FIG. 3 shows a power sub-assembly with air cooling provided on two sides, whereby the upper cooling element ( 80 a ) is physically connected to a heat bridge consisting of the encapsulating compound ( 30 ) physically contacting the cooling element ( 80 a ), and the lower cooling element ( 80 b ) is physically connected to the ceramic interconnect device ( 50 ).
  • the cooler structure shown is a single part in each case and is connected to cooling ribs or cooling pins such that air can pass through as turbulent as possible.
  • FIG. 4 shows a power sub-assembly with two-sided water cooling according to the refinement shown in FIG. 3 , whereby the cooler structure shown in FIG. 4 is provided as a single part and is provided with internal water-conducting channels such that water can pass through in a closed structure with short sealing length.
  • FIG. 5 shows a power sub-assembly with two-sided cooling, whereby the lower cooling element ( 80 b ) is again provided as a single part, whereas the upper cooling element ( 80 c ) is provided as multiple parts.
  • the cooler structure shown as upper cooling element ( 80 c ) consists, for example, of a plurality of cooling plates extending over the upper side of the semiconductor module ( 10 ) or consists of a plurality of cooling pins distributed over the surface of the semiconductor module ( 10 ).
  • the semiconductor module ( 10 ) comprises an encapsulating compound ( 30 ) that has been improved in several respects. These include, in particular, a thermal expansion coefficient in harmony with a ceramic interconnect device which has a beneficial impact in terms of preventing undesired phenomena such as delamination (for example due to thermal shear voltages) and destruction of the encapsulated contacting elements (for example shearing of bond, wires).
  • Another advantage of the encapsulating compound ( 30 ) is its comparatively good thermal conductivity providing a basis for good heat dissipation from the semiconductor module ( 10 ) and/or the at least one semiconductor component ( 20 ) during the intended operation. The adhesion to the surfaces contacting the encapsulating compound ( 30 ) is also good.
  • the benefits mentioned above also mean that the semiconductor module ( 10 ) is improved in terms of its durability and in that it can be operated at comparatively high electrical power.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Materials Engineering (AREA)
US15/319,281 2014-06-18 2015-05-12 Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component Abandoned US20170133291A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14172876.6 2014-06-18
EP14172876.6A EP2958139B1 (de) 2014-06-18 2014-06-18 Verfahren zur Herstellung eines Halbleitermoduls
PCT/EP2015/060408 WO2015193035A1 (de) 2014-06-18 2015-05-12 Halbleitermodul mit einer mindestens einen halbleiterbaustein bedeckenden umhüllungsmasse

Related Parent Applications (1)

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PCT/EP2015/060408 A-371-Of-International WO2015193035A1 (de) 2014-06-18 2015-05-12 Halbleitermodul mit einer mindestens einen halbleiterbaustein bedeckenden umhüllungsmasse

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US15/974,930 Continuation US10593608B2 (en) 2014-06-18 2018-05-09 Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component

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US15/319,281 Abandoned US20170133291A1 (en) 2014-06-18 2015-05-12 Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component
US15/974,930 Active US10593608B2 (en) 2014-06-18 2018-05-09 Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component

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US (2) US20170133291A1 (de)
EP (1) EP2958139B1 (de)
JP (1) JP6545193B2 (de)
KR (1) KR101899740B1 (de)
CN (1) CN106415820B (de)
HU (1) HUE051760T2 (de)
WO (1) WO2015193035A1 (de)

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EP3967487A1 (de) * 2020-09-11 2022-03-16 Heraeus Deutschland GmbH & Co. KG Schichtenverbund
CN116472601A (zh) * 2020-12-23 2023-07-21 贺利氏德国有限两合公司 用于制造包封半导体管芯和/或包封半导体封装的方法
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US20180261518A1 (en) 2018-09-13
HUE051760T2 (hu) 2021-03-29
KR20170020448A (ko) 2017-02-22
EP2958139A1 (de) 2015-12-23
EP2958139B1 (de) 2020-08-05
US10593608B2 (en) 2020-03-17
CN106415820A (zh) 2017-02-15
WO2015193035A1 (de) 2015-12-23
JP2017520111A (ja) 2017-07-20

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