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US20160093712A1 - Semiconductor Device and Method for Manufacturing the Same - Google Patents

Semiconductor Device and Method for Manufacturing the Same Download PDF

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Publication number
US20160093712A1
US20160093712A1 US14/515,514 US201414515514A US2016093712A1 US 20160093712 A1 US20160093712 A1 US 20160093712A1 US 201414515514 A US201414515514 A US 201414515514A US 2016093712 A1 US2016093712 A1 US 2016093712A1
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layer
dielectric layer
gate
metal layer
semiconductor device
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US14/515,514
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US9312357B1 (en
Inventor
Shih-Chang Tsai
Tzu-Chin Tseng
Hsiao-Ting Lin
Chang-Yih Chen
Sam Lai
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United Microelectronics Corp
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United Microelectronics Corp
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Definitions

  • the present invention generally relates to a semiconductor processing technology and, more particularly to, a semiconductor device and a method for manufacturing the same.
  • MOSFET metal-oxide-semiconductor field-effect transistors
  • the metal gate resistance (R s — mG ) increases with the thinning of aluminum of the metal gate, which causes the device characteristics to change with the processing parameters of aluminum of the metal gate. For example, for I/O devices with a larger gate area than that of the core devices, dishing due to over-polishing often happens in low pattern density areas (for example, the gate area of an I/O device), during the chemical-mechanical polishing (CMP) planarization process. As a result, the metal gate resistance (R s — mG ) increases with the thinning of aluminum of the metal gate to enhance the threshold voltage (V t ) and lower the turn-on current (I on ). Even worse, threshold voltage mismatch occurs for paired I/O devices due to thickness difference between the metal gates when dishing appears. Both of the above lead to chip malfunction.
  • the present invention provides a method for manufacturing a semiconductor device.
  • the method includes steps hereinafter.
  • a substrate is provided with a first dielectric layer thereon.
  • the first dielectric layer is provided with a trench.
  • a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer.
  • the metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer.
  • a treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion.
  • a chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.
  • the present invention further provides a semiconductor device.
  • the semiconductor device includes a substrate with a first dielectric layer and a gate structure thereon.
  • the gate structure includes a gate dielectric layer, a gate metal layer and a passivation layer from bottom up.
  • the passivation layer includes a compound including elements the gate metal layer is formed of.
  • FIG. 1A to FIG. 1E are cross-sectional views showing steps for a method for manufacturing a semiconductor device according to one embodiment of the present invention.
  • FIG. 1A to FIG. 1E cross-sectional views showing steps for a method for manufacturing a semiconductor device 100 according to one embodiment of the present invention.
  • a substrate 110 is provided with a first dielectric layer 120 thereon.
  • the first dielectric layer 120 includes at least one trench 125 .
  • the substrate 110 can be a silicon substrate, a III-V semiconductor substrate, a sapphire substrate, a silicon on insulator (SOI) substrate, or any other substrates with electronic components thereon.
  • the substrate 110 is a silicon substrate having at least one n-channel MOSFET 111 and at least one p-channel MOSFET 112 that are separated by a shallow trench isolation (STI) structure 113 therebetween.
  • the first dielectric layer 120 is an oxide layer or any other low-k dielectric layers formed by deposition.
  • the first dielectric layer 120 can be a carbon-doped oxide layer.
  • the (at least one) trench 125 is defined by a sidewall of a spacer 124 .
  • the spacer 124 can be formed of, for example, nitride.
  • the source/drain regions 1111 of the n-channel MOSFET 111 may include silicon doped with group V elements such as phosphor (P) so that there is provided a tensile strain in the channel between the source/drain regions 1111 to improve electron mobility.
  • the source/drain regions 1121 of the p-channel MOSFET 112 may include silicon-germanium (SiGe). The lattice constant of silicon-germanium is larger than that of silicon so that there is provided a compressive strain in the channel between the source/drain regions 1121 to improve hole mobility.
  • a second dielectric layer 121 and a stacked layer 122 ( 123 ) are formed in sequence to cover the bottom surface of the trench 125 , the sidewall of the spacer 124 and the top surface of the first dielectric layer 120 .
  • the second dielectric layer 121 is a high-k dielectric layer including, for example, hafnium-based dielectric materials, such as HfO 2 and HfSiO, etc.
  • the stacked layer 122 ( 123 ) includes a barrier layer and a work function metal layer.
  • the barrier layer may include a titanium nitride (TiN) layer and a tantalum nitride (TaN) layer.
  • the work function metal layer may include a titanium-aluminum (TiAl) alloy layer.
  • the barrier layer may include a titanium nitride (TiN) layer and a tantalum nitride (TaN) layer.
  • the work function metal layer may include a two-layered structure including a titanium-aluminum (TiAl) alloy layer on the top and a titanium nitride (TiN) layer at the bottom thereof.
  • TiAl titanium-aluminum
  • TiN titanium nitride
  • the present invention is not limited to the two-layered structure as above. Modifications within the scope of the present invention may be made by those of ordinary skills in the art.
  • a metal layer 130 is deposited to fill the trench 125 and cover the surface of the first dielectric layer 120 .
  • the metal layer 130 may include Al, W or Cu.
  • the present invention is not limited to the material the metal layer 130 is made of. Modifications within the scope of the present invention may be made by those of ordinary skills in the art.
  • the metal layer 130 is partially removed so that a remaining portion 131 of the metal layer 130 covers the first dielectric layer 120 .
  • the metal layer 130 is partially removed by processes such as etching and chemical-mechanical polishing, etc.
  • the thickness of the remaining portion 131 is smaller than 20 nm.
  • the remaining portion 131 is thinner than 10 nm.
  • a treatment process is performed so that a top portion of the remaining portion 131 of the metal layer 130 is transformed into a passivation layer 132 and a bottom portion of the remaining portion 131 of the metal layer 130 is transformed into a gate metal layer 133 .
  • the gate metal layer 133 is bulk-shaped.
  • the treatment process is performed by plasma-enhanced oxidation or plasma-enhanced nitridation.
  • the passivation layer 132 includes a compound having elements that the gate metal layer 133 is formed of. More particularly, the passivation layer 132 may include metal oxide or metal nitride.
  • a chemical-mechanical polishing (CMP) process is performed until the first dielectric layer 120 is exposed so that a remaining portion 134 of the passivation layer 132 remains in the trench 125 .
  • CMP chemical-mechanical polishing
  • the thickness of the remaining portion 134 of the passivation layer 132 is smaller than 10 nm.
  • the thickness of the remaining portion 134 is in a range from 2 nm to 8 nm.
  • a contact plug (not shown) is provided penetrating the remaining portion 134 of the passivation layer 132 to connect the gate metal layer 133 .
  • the semiconductor device 100 is manufactured, as shown in FIG. 1E .
  • the semiconductor device 100 includes a substrate 110 with a first dielectric layer 120 and a gate structure 140 thereon.
  • the gate structure 140 includes a gate dielectric layer 126 , a gate metal layer 133 and a (passivation layer) remaining portion 134 from bottom up.
  • the passivation layer remaining portion 134 includes a compound including elements that the gate metal layer 133 is formed of.
  • the gate structure 140 is defined by the sidewall of the spacer 124 .
  • the gate structure 140 may further include a stacked layer 127 ( 128 ) provided between the gate dielectric layer 126 and the gate metal layer 133 .
  • the gate dielectric layer 126 and the stacked layer 127 ( 128 ) are U-shaped, and configured along the sidewall of the spacer 124 and the bottom surface of the trench 125 .
  • the semiconductor device 100 may further include a contact plug (not shown) penetrating the passivation layer remaining portion 134 to connect the gate metal layer 133 .
  • the gate structure in FIG. 1E of the one embodiment of present invention is a high-k last gate structure.
  • the present invention is not limited thereto. In other words, the disclosure of the present invention may also be used to manufacture a semiconductor device with a high-k first gate structure.
  • the passivation layer 134 of the semiconductor device 100 in FIG. 1E can prevent dishing effects due to over-polishing of the gate area of a semiconductor device. Therefore, the present invention is presented to improve I-V characteristics, avoid threshold voltage mismatch for paired I/O devices, and prevent chip malfunction.

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Abstract

A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

Description

    FIELD OF THE INVENTION
  • The present invention generally relates to a semiconductor processing technology and, more particularly to, a semiconductor device and a method for manufacturing the same.
    • BACKGROUND OF THE INVENTION
  • The integrated circuit (IC) manufacturing technology have been moving forward as the metal-oxide-semiconductor field-effect transistors (MOSFET's) become smaller and smaller to improve the performances such as increased switching speed, lowered power consumption and higher level of integration. HKMG (high-k metal gate) technology promises to enable scaling of the transistors as well as reduced stand-by power due to a reduction in gate leakage.
  • In the HKMG technology, aluminum is often used as a conductor of the metal gate. The metal gate resistance (Rs — mG) increases with the thinning of aluminum of the metal gate, which causes the device characteristics to change with the processing parameters of aluminum of the metal gate. For example, for I/O devices with a larger gate area than that of the core devices, dishing due to over-polishing often happens in low pattern density areas (for example, the gate area of an I/O device), during the chemical-mechanical polishing (CMP) planarization process. As a result, the metal gate resistance (Rs — mG) increases with the thinning of aluminum of the metal gate to enhance the threshold voltage (Vt) and lower the turn-on current (Ion). Even worse, threshold voltage mismatch occurs for paired I/O devices due to thickness difference between the metal gates when dishing appears. Both of the above lead to chip malfunction.
  • To overcome the problems due to dishing of the metal gate by the CMP process, there is need in providing a semiconductor device and a method for manufacturing the same to prevent chip malfunction.
    • SUMMARY OF THE INVENTION
  • It is one object of the present invention to provide a semiconductor device and a method for manufacturing the semiconductor device using a treatment process on a metal gate prior to a chemical-mechanical polishing process on the metal gate so as to prevent dishing effects that may affect the characteristics of the device.
  • It is one object of the present invention to provide a semiconductor device and a method for manufacturing the semiconductor device using a treatment process on a metal gate prior to a chemical-mechanical polishing process on the metal gate so as to improve the matching of threshold voltages of paired large-area devices.
  • In order to achieve the foregoing object, in one embodiment, the present invention provides a method for manufacturing a semiconductor device. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.
  • In order to achieve the foregoing object, in one embodiment, the present invention further provides a semiconductor device. The semiconductor device includes a substrate with a first dielectric layer and a gate structure thereon. The gate structure includes a gate dielectric layer, a gate metal layer and a passivation layer from bottom up. The passivation layer includes a compound including elements the gate metal layer is formed of.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The present invention will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:
  • FIG. 1A to FIG. 1E are cross-sectional views showing steps for a method for manufacturing a semiconductor device according to one embodiment of the present invention.
    •  DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • The present invention will now be described more specifically with reference to the following embodiment. It is to be noted that the following descriptions of the preferred embodiment of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.
  • The present invention will now be described more specifically with reference to the following embodiment. It is to be noted that the following descriptions of the preferred embodiment of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.
  • Please refer to FIG. 1A to FIG. 1E for cross-sectional views showing steps for a method for manufacturing a semiconductor device 100 according to one embodiment of the present invention.
  • As shown in FIG. 1A, a substrate 110 is provided with a first dielectric layer 120 thereon. The first dielectric layer 120 includes at least one trench 125. In some embodiments, the substrate 110 can be a silicon substrate, a III-V semiconductor substrate, a sapphire substrate, a silicon on insulator (SOI) substrate, or any other substrates with electronic components thereon. For example, as shown in FIG. 1A, the substrate 110 is a silicon substrate having at least one n-channel MOSFET 111 and at least one p-channel MOSFET 112 that are separated by a shallow trench isolation (STI) structure 113 therebetween. In the present embodiment, the first dielectric layer 120 is an oxide layer or any other low-k dielectric layers formed by deposition. For example, the first dielectric layer 120 can be a carbon-doped oxide layer. Furthermore, the (at least one) trench 125 is defined by a sidewall of a spacer 124. The spacer 124 can be formed of, for example, nitride. In FIG. 1A, the source/drain regions 1111 of the n-channel MOSFET 111 may include silicon doped with group V elements such as phosphor (P) so that there is provided a tensile strain in the channel between the source/drain regions 1111 to improve electron mobility. On the other hand, the source/drain regions 1121 of the p-channel MOSFET 112 may include silicon-germanium (SiGe). The lattice constant of silicon-germanium is larger than that of silicon so that there is provided a compressive strain in the channel between the source/drain regions 1121 to improve hole mobility.
  • Moreover, a second dielectric layer 121 and a stacked layer 122 (123) are formed in sequence to cover the bottom surface of the trench 125, the sidewall of the spacer 124 and the top surface of the first dielectric layer 120. In some embodiments, the second dielectric layer 121 is a high-k dielectric layer including, for example, hafnium-based dielectric materials, such as HfO2 and HfSiO, etc. The stacked layer 122 (123) includes a barrier layer and a work function metal layer. For example, in the stacked layer 122 of the n-channel MOSFET 111, the barrier layer may include a titanium nitride (TiN) layer and a tantalum nitride (TaN) layer. The work function metal layer may include a titanium-aluminum (TiAl) alloy layer. In the stacked layer 123 of the p-channel MOSFET 112, the barrier layer may include a titanium nitride (TiN) layer and a tantalum nitride (TaN) layer. The work function metal layer may include a two-layered structure including a titanium-aluminum (TiAl) alloy layer on the top and a titanium nitride (TiN) layer at the bottom thereof. However, the present invention is not limited to the two-layered structure as above. Modifications within the scope of the present invention may be made by those of ordinary skills in the art.
  • Then, as shown in FIG. 1B, a metal layer 130 is deposited to fill the trench 125 and cover the surface of the first dielectric layer 120. In some embodiments, the metal layer 130 may include Al, W or Cu. However, the present invention is not limited to the material the metal layer 130 is made of. Modifications within the scope of the present invention may be made by those of ordinary skills in the art.
  • As shown in FIG. 1C, the metal layer 130 is partially removed so that a remaining portion 131 of the metal layer 130 covers the first dielectric layer 120. In some embodiments, the metal layer 130 is partially removed by processes such as etching and chemical-mechanical polishing, etc. The thickness of the remaining portion 131 is smaller than 20 nm. Preferably, the remaining portion 131 is thinner than 10 nm.
  • Afterwards, in FIG. 1D, a treatment process is performed so that a top portion of the remaining portion 131 of the metal layer 130 is transformed into a passivation layer 132 and a bottom portion of the remaining portion 131 of the metal layer 130 is transformed into a gate metal layer 133. A shown in FIG. 1D, the gate metal layer 133 is bulk-shaped. In some embodiments, the treatment process is performed by plasma-enhanced oxidation or plasma-enhanced nitridation. Accordingly, the passivation layer 132 includes a compound having elements that the gate metal layer 133 is formed of. More particularly, the passivation layer 132 may include metal oxide or metal nitride.
  • At last, as shown in FIG. 1E, a chemical-mechanical polishing (CMP) process is performed until the first dielectric layer 120 is exposed so that a remaining portion 134 of the passivation layer 132 remains in the trench 125. In some embodiments, the thickness of the remaining portion 134 of the passivation layer 132 is smaller than 10 nm. Preferably, the thickness of the remaining portion 134 is in a range from 2 nm to 8 nm.
  • Furthermore, in some embodiments, a contact plug (not shown) is provided penetrating the remaining portion 134 of the passivation layer 132 to connect the gate metal layer 133.
  • Accordingly, by the use of the method described from FIG. 1A to FIG. 1E, the semiconductor device 100 is manufactured, as shown in FIG. 1E. The semiconductor device 100 includes a substrate 110 with a first dielectric layer 120 and a gate structure 140 thereon. The gate structure 140 includes a gate dielectric layer 126, a gate metal layer 133 and a (passivation layer) remaining portion 134 from bottom up. The passivation layer remaining portion 134 includes a compound including elements that the gate metal layer 133 is formed of.
  • In some embodiments, the gate structure 140 is defined by the sidewall of the spacer 124. The gate structure 140 may further include a stacked layer 127 (128) provided between the gate dielectric layer 126 and the gate metal layer 133. The gate dielectric layer 126 and the stacked layer 127 (128) are U-shaped, and configured along the sidewall of the spacer 124 and the bottom surface of the trench 125. Furthermore, the semiconductor device 100 may further include a contact plug (not shown) penetrating the passivation layer remaining portion 134 to connect the gate metal layer 133. It is noted that the gate structure in FIG. 1E of the one embodiment of present invention is a high-k last gate structure. However, the present invention is not limited thereto. In other words, the disclosure of the present invention may also be used to manufacture a semiconductor device with a high-k first gate structure.
  • With of realization of the present invention, the passivation layer 134 of the semiconductor device 100 in FIG. 1E can prevent dishing effects due to over-polishing of the gate area of a semiconductor device. Therefore, the present invention is presented to improve I-V characteristics, avoid threshold voltage mismatch for paired I/O devices, and prevent chip malfunction.
  • It is noted that, even if there is dishing in the passivation layer 132 after the CMP process, the thickness of the gate metal layer 133 underneath the passivation layer 132 still remains unchanged. Electrical characteristics and matching of threshold voltages remain unchanged accordingly.
  • While the invention has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such modifications and similar structures.

Claims (20)

1. A method for manufacturing a semiconductor device, comprising steps of:
providing a substrate with a first dielectric layer thereon, said first dielectric layer having a trench;
depositing a metal layer filling said trench and covering a surface of said first dielectric layer;
partially removing said metal layer so that a remaining portion of said metal layer covers said first dielectric layer;
performing a treatment process to transform a top portion of said remaining portion of said metal layer into a passivation layer; and
performing a chemical-mechanical polishing (CMP) process until said first dielectric layer is exposed so that a remaining portion of said passivation layer remains in said trench.
2. The method of claim 1, wherein said trench is defined by a sidewall of a spacer.
3. The method of claim 2, further comprising a step, prior to depositing said metal layer, of:
forming a second dielectric layer and a stacked layer covering a bottom portion of said trench, said sidewall of said spacer and said surface of said first dielectric layer.
4. The method of claim 1, further comprising a step of:
forming a contact plug penetrating said remaining portion of said passivation layer to connect said gate metal layer.
5. The method of claim 1, wherein said first dielectric layer comprises an oxide layer.
6. The method of claim 3, wherein said second dielectric layer comprises a high-k dielectric layer.
7. The method of claim 2, wherein said spacer comprises a nitride layer.
8. The method of claim 1, wherein said treatment process is performed by plasma-enhanced oxidation or plasma-enhanced nitridation.
9. The method of claim 1, wherein said metal layer comprises Al, W or Cu.
10. The method of claim 1, wherein said remaining portion of said metal layer is thinner than 20 nm.
11. The method of claim 1, wherein said remaining portion of said passivation layer is thinner than 10 nm.
12. A semiconductor device, comprising:
a substrate with a first dielectric layer and a gate structure thereon, said gate structure comprising a gate dielectric layer, a gate metal layer and a passivation layer from bottom up;
wherein said passivation layer is thinner than 10 nm and comprises a compound, said compound comprising elements said gate metal layer is formed of.
13. The semiconductor device of claim 12, wherein said gate structure is defined by a sidewall of a spacer.
14. The semiconductor device of claim 13, further comprising a stacked layer disposed between said gate dielectric layer and said gate metal layer, wherein said gate dielectric layer and said stacked layer are U-shaped and configured along said sidewall of said spacer and a bottom surface of a trench defined by said sidewall of said spacer.
15. The semiconductor device of claim 12, further comprising a contact plug penetrating said passivation layer to connect said gate metal layer.
16. The semiconductor device of claim 12, wherein said first dielectric layer comprises an oxide layer.
17. The semiconductor device of claim 12, wherein said gate dielectric layer comprises a high-k dielectric layer.
18. The semiconductor device of claim 13, wherein said spacer comprises a nitride layer.
19. The semiconductor device of claim 12, wherein said metal layer comprises Al, W or Cu.
20. (canceled)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10312093B2 (en) * 2017-03-24 2019-06-04 Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor device having a surface insulator layer and manufacturing method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3669919B2 (en) * 2000-12-04 2005-07-13 シャープ株式会社 Manufacturing method of semiconductor device
US20020192941A1 (en) * 2001-06-19 2002-12-19 Chia-Lin Hsu Method for reducing dishing in copper chemical mechanical polishing process
US7126199B2 (en) * 2004-09-27 2006-10-24 Intel Corporation Multilayer metal gate electrode
US8809179B2 (en) * 2006-04-13 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing topography of non-volatile memory and resulting memory cells
US20100213555A1 (en) * 2009-02-23 2010-08-26 Advanced Micro Devices, Inc. Metal oxide semiconductor devices having capping layers and methods for fabricating the same
US8704229B2 (en) * 2011-07-26 2014-04-22 Globalfoundries Inc. Partial poly amorphization for channeling prevention
US20130043592A1 (en) * 2011-08-19 2013-02-21 Globalfoundries Inc. Methods of Forming a Replacement Gate Comprised of Silicon and a Device Including Same
US8580628B2 (en) * 2012-02-02 2013-11-12 GlobalFoundries, Inc. Integrated circuit contact structure and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10312093B2 (en) * 2017-03-24 2019-06-04 Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor device having a surface insulator layer and manufacturing method therefor
US10497791B2 (en) 2017-03-24 2019-12-03 Semiconductor Manufacturing International (Shanghai) Corporation Semiconductor device having a surface insulating layter and manufacturing method therefor

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