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US20160043274A1 - Group iii nitride semiconductor light-emitting device and production method therefor - Google Patents

Group iii nitride semiconductor light-emitting device and production method therefor Download PDF

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Publication number
US20160043274A1
US20160043274A1 US14/817,723 US201514817723A US2016043274A1 US 20160043274 A1 US20160043274 A1 US 20160043274A1 US 201514817723 A US201514817723 A US 201514817723A US 2016043274 A1 US2016043274 A1 US 2016043274A1
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dielectric multilayer
substrate
light
emitting device
dmf
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Toru Kanto
Koichi Goshonoo
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • H01L33/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • H01L33/0075—
    • H01L33/12—
    • H01L33/20—
    • H01L33/32—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H01L2933/0025—
    • H01L2933/0033—
    • H01L2933/0058—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages

Definitions

  • the present invention relates to a Group III nitride semiconductor light-emitting device and a production method therefor. More particularly, the invention relates to a Group III nitride semiconductor light-emitting device having a semiconductor layer on an uneven structure and a production method therefor.
  • the techniques have been developed to efficiently extract light emitted from the light-emitting layer in order to improve the emission efficiency. For example, there is a technique to form an uneven surface on the substrate, thereby varying the transmissivity or reflectance at a boundary between the substrate and the semiconductor layer.
  • Japanese Patent Application Laid-Open (kokai) No. 2004-247757 discloses the technique to form an uneven refractive index interface at a position which affects light propagating in a transversal direction parallel to the surface of a substrate (refer to paragraph [0023]). It also discloses the technique to form a GaN-based crystal film having different refractive indices such as a first crystal 20 a and a second crystal 20 b (refer to paragraphs [0067] to and FIG. 4). With these, the light propagating in the transversal direction is directed toward the outside (refer to paragraphs [0005] to [0007], [0018], [0022] to [0023]).
  • the light propagating in the transversal direction is reflected to be incident to a surface of the substrate (refer to paragraph [0006]).
  • the technique to reflect the light toward the surface of the substrate is described.
  • a flip-chip type light-emitting device some of the light propagating through the substrate is directed from the semiconductor layer to a light extraction surface of the substrate, and the other is directed from the light extraction surface of the substrate to the semiconductor layer.
  • Such a light is difficult to extract to the outside of the light-emitting device by the technique described in Japanese Patent Application Laid-Open (kokai) No. 2004-247757.
  • an object of the present invention is to provide a Group III nitride semiconductor light-emitting device which attains suitable light extraction to the outside by reflecting the light directed from the light extraction surface of the substrate to the semiconductor layer toward the substrate at an interface between the substrate and the semiconductor layer, and a production method therefor.
  • a Group III nitride semiconductor light-emitting device comprising:
  • the Group III nitride semiconductor light-emitting device has a plurality of dielectric multilayer films on the first surface side of the substrate.
  • the first surface of the substrate has at least a flat surface.
  • the buffer layer is formed on at least a part of the flat surface.
  • Each of the dielectric multilayer films has an inclined plane inclined to the flat surface.
  • the first semiconductor layer is formed on the buffer layer and the inclined planes of the dielectric multilayer films.
  • the surfaces of the dielectric multilayer films constitute the surfaces of protrusions.
  • the dielectric multilayer film transmits light directed from the semiconductor layer toward the substrate, and reflects light directed from the substrate toward the semiconductor layer. Therefore, the light-emitting device can suppress the light from being reabsorbed by the light-emitting layer.
  • the light-emitting device can efficiently extract the light emitted from the light-emitting layer to the outside.
  • a second aspect of the technique is drawn to a specific mode of the Group III nitride semiconductor light-emitting device, wherein, the first surface of the substrate has a plurality of protrusions.
  • the dielectric multilayer films cover at least a part of the surfaces of the protrusions.
  • the portion other than the protrusions on the first surface of the substrate is a flat surface.
  • a third aspect of the technique is drawn to a specific mode of the Group III nitride semiconductor light-emitting device, wherein, the first surface of the substrate is flat over the entire surface thereof.
  • the flat surface is formed over the entire surface of the first surface.
  • the buffer layer is formed on a part of the flat surface.
  • the dielectric multilayer films are formed on the remaining portion of the flat surface, which are also the protrusions protruding toward the first semiconductor layer.
  • a fourth aspect of the technique is drawn to a specific mode of the Group III nitride semiconductor light-emitting device, wherein, the dielectric multilayer films are the Distributed Bragg Reflectors (DBR).
  • DBR Distributed Bragg Reflectors
  • a fifth aspect of the technique is drawn to a specific mode of the Group III nitride semiconductor light-emitting device, wherein, the buffer layer is not disposed on the dielectric multilayer films.
  • a sixth aspect of the technique is drawn to a specific mode of the Group III nitride semiconductor light-emitting device, wherein, the Group III nitride semiconductor light-emitting device is a flip-chip type light-emitting device.
  • the substrate has a roughened second surface. Therefore, the light once incident from the semiconductor layer to the substrate is hardly returned from the substrate to the semiconductor layer, and is extracted to the outside.
  • a method for producing a Group III nitride semiconductor light-emitting device comprising:
  • a second semiconductor layer formation step of forming a second conduction type second semiconductor layer on the light-emitting layer is a second semiconductor layer formation step of forming a second conduction type second semiconductor layer on the light-emitting layer.
  • the production method further comprises a dielectric multilayer film formation step of forming a plurality of dielectric multilayer films on the first surface of the substrate.
  • a dielectric multilayer film formation step a plurality of dielectric multilayer films having inclined planes inclined to the flat surface is formed.
  • the buffer layer formation step the buffer layer is grown on the flat surface of the substrate which is not covered with the dielectric multilayer films.
  • the first semiconductor layer formation step the first semiconductor layer is grown on the buffer layer so as to cover the inclined planes of the dielectric multilayer films.
  • An eighth aspect of the technique is drawn to a specific mode of the method for producing the Group III nitride semiconductor light-emitting device, wherein, in the substrate preparation step, a substrate having an uneven structure in which the first surface comprises a flat surface and a plurality of protrusions.
  • the dielectric multilayer film formation step comprises a mask formation step of forming a mask, a film formation step of forming a dielectric multilayer film on the protrusions, and a mask removal step of removing the mask from the flat surface to obtain a plurality of dielectric multilayer films on the protrusions.
  • a ninth aspect of the technique is drawn to a specific mode of the method for producing the Group III nitride semiconductor light-emitting device, wherein, in the substrate preparation step, the flat surface is over the entire surface of the first surface.
  • the dielectric multilayer film formation step comprises a film formation step of forming an uniform dielectric multilayer film on the flat surface, a resist disposition step of disposing a resist mask with a predetermined pattern on the uniform dielectric multilayer film, an etching step of etching the uniform dielectric multilayer film, thereby forming inclined planes, making the uniform dielectric multilayer film into a plurality of dielectric multilayer films, and partially exposing the flat surface of the substrate.
  • a buffer layer is formed on the flat surface partially exposed.
  • the present techniques provide a Group III nitride semiconductor light-emitting device which attains suitable light extraction to the outside by reflecting the light directed from the substrate to the semiconductor layer toward the substrate, and a production method therefor.
  • FIG. 1 is a schematic view of the structure of a light-emitting device according to Embodiment 1;
  • FIG. 2 is a view showing the structure of a dielectric multilayer film and adjacent layers of the light-emitting device according to Embodiment 1;
  • FIG. 3 is a view showing the structure of the dielectric multilayer film of the light-emitting device according to Embodiment 1;
  • FIG. 4 is a view showing the concepts of reflection and transmission in the dielectric multilayer film of the light-emitting device according to Embodiment 1;
  • FIG. 5 is a view (part 1) showing a substrate preparation step in a method for producing a light-emitting device according to Embodiment 1;
  • FIG. 6 is a view (part 2) showing a substrate preparation step in the method for producing the light-emitting device according to Embodiment 1;
  • FIG. 7 is a view (part 1) showing a dielectric multilayer film formation step in the light-emitting device according to Embodiment 1;
  • FIG. 8 is a view (part 2) showing a dielectric multilayer film formation step in the light-emitting device according to Embodiment 1;
  • FIG. 9 is a view showing the method for producing the light-emitting device according to Embodiment 1;
  • FIG. 10 is a schematic view of the structure of a light-emitting device according to Embodiment 2;
  • FIG. 11 is a view showing the structure of a dielectric multilayer film and adjacent layers of the light-emitting device according to Embodiment 2;
  • FIG. 12 is a view showing the structure of the dielectric multilayer film of the light-emitting device according to Embodiment 2;
  • FIG. 13 is a view showing the concepts of reflection and transmission in the dielectric multilayer film of the light-emitting device according to Embodiment 2;
  • FIG. 14 is a view (part 1) showing a step of forming a dielectric multilayer film in the light-emitting device according to Embodiment 2;
  • FIG. 15 is a view (part 2) showing a step of forming a dielectric multilayer film in the light-emitting device according to Embodiment 2;
  • FIG. 16 is a view (part 3) showing a step of forming a dielectric multilayer film in the light-emitting device according to Embodiment 2;
  • FIG. 17 is a view (part 4) showing a step of forming a dielectric multilayer film in the light-emitting device according to Embodiment 2.
  • FIG. 1 is a schematic view of the structure of a light-emitting device 100 of Embodiment 1.
  • the light-emitting device 100 is a flip-chip type semiconductor light-emitting device. In the light-emitting device 100 , a light is extracted from a light extraction surface of the substrate in the direction of arrows as shown in FIG. 1 .
  • the light-emitting device 100 has a plurality of semiconductor layers formed of a Group III nitride semiconductor. As shown in FIG.
  • the light-emitting device 100 has a substrate 110 , a dielectric multilayer film DMF 1 , a buffer layer 120 , an n-type semiconductor layer 130 , a light-emitting layer 140 , a p-type semiconductor layer 150 , an n-electrode N 1 , and a p-electrode P 1 .
  • the substrate 110 has a first surface 110 a and a second surface 110 b.
  • the first surface 110 a comprises a flat bottom surface 111 and a plurality of protrusions 112 .
  • the protrusions are isolated each other like an island.
  • the second surface 110 b is a light extraction surface.
  • the dielectric multilayer film DMF 1 is formed on the protrusions 112 of the first surface 110 a of the substrate 110 .
  • the buffer layer 120 is formed on the bottom surface 111 of the first surface 110 a of the substrate 110 .
  • the buffer layer 120 is not disposed on the dielectric multilayer film DMF 1 . In FIG. 1 , for convenience of drawing, an edge of the buffer layer 120 appears to hang over the ends of the dielectric multilayer film DMF 1 . However, actually they are hardly overlapped.
  • the n-type semiconductor layer 130 is formed on the buffer layer 120 and inclined planes L 1 of the dielectric multilayer film DMF 1 .
  • the n-type semiconductor layer 130 is a first conduction type first semiconductor layer.
  • the light-emitting layer 140 is formed on the n-type semiconductor layer 130 .
  • the p-type semiconductor layer 150 is formed on the light-emitting layer 140 .
  • the p-type semiconductor layer 150 is a second conduction type second semiconductor layer.
  • the n-electrode N 1 is formed on the n-type semiconductor layer 130 . Therefore, the n-electrode N 1 is electrically connected to the n-type semiconductor layer 130 .
  • the p-electrode P 1 is formed on the p-type semiconductor layer 150 . Therefore, the p-electrode P 1 is electrically connected to the p-type semiconductor layer 150 .
  • the p-electrode P 1 preferably serves as a reflective layer to reflect a light directed from the p-type semiconductor layer 150 toward the p-electrode P 1 .
  • FIG. 2 is an enlarged view showing a part of the vicinity of the substrate 110 .
  • the first surface 110 a of the substrate 110 comprises a flat bottom surface 111 and a plurality of protrusions 112 .
  • the bottom surface 111 is a flat surface.
  • the protrusions 112 protrude toward the n-type semiconductor layer 130 .
  • Each of the protrusions 112 has a conical shape.
  • Each of the protrusions 112 has an inclined plane K 1 inclined to the flat bottom surface 111 .
  • the inclined plane K 1 is a conical surface.
  • a plurality of dielectric multilayer films DMF 1 is formed on a plurality of protrusions 112 . That is, the dielectric multilayer film DMF 1 covers at least a part of the surface of the protrusion. On the bottom surface 111 , the dielectric multilayer film DMF 1 is not formed. A portion other than the protrusions 112 of the first surface 110 a of the substrate 110 is the flat bottom surface 111 .
  • An angle of the inclined plane K 1 to the bottom surface 111 is within a range of 40° to 60°. The angle range is merely an example, and other angle values may be acceptable.
  • the buffer layer 120 is formed on the bottom surface 111 .
  • the n-type semiconductor layer 130 is formed on the buffer layer 120 .
  • the dielectric multilayer film DMF 1 is formed on the inclined plane K 1 of the protrusion 112 .
  • the dielectric multilayer film DMF 1 covers the protrusion 112 . Therefore, the protrusion 112 is not contacted with the n-type semiconductor layer 130 .
  • FIG. 3 is an enlarged view showing the vicinity of the dielectric multilayer film DMF 1 .
  • the dielectric multilayer film DMF 1 is formed on the inclined plane K 1 of the protrusion 112 . Therefore, the dielectric multilayer film DMF 1 has the inclined plane L 1 inclined to the flat bottom surface 111 .
  • the inclined plane L 1 is a conical surface. Therefore, the surface of the dielectric multilayer film DMF 1 has a conical shape.
  • the respective inclined planes L 1 of the dielectric multilayer film DMF 1 are almost parallel to the inclined plane K 1 of the protrusion 112 .
  • the n-type semiconductor layer 130 is provided on the inclined plane L 1 .
  • the inclined plane L 1 constitutes an uneven shape disposed on the first surface 110 a side of the substrate 110 .
  • the uneven shape of the dielectric multilayer film DMF 1 has a height of 1 ⁇ m to 5 ⁇ m.
  • the pitch interval of the uneven shape is 1 ⁇ m to 5 ⁇ m.
  • the angle of the uneven shape is 40° to 60°.
  • the dielectric multilayer film DMF 1 comprises dielectric films DMF 1 a, DMF 1 b, DMF 1 c, DMF 1 d, and so on.
  • the dielectric multilayer film DMF 1 is a Distributed Bragg Reflector (DBR). That is, the dielectric multilayer film DMF 1 is formed by alternately depositing two types of dielectrics having different refractive indices.
  • the dielectric films DMF 1 a and DMF 1 c are made of TiO 2
  • the dielectric films DMF 1 b and DMF 1 d are made of SiO 2 .
  • the dielectric films DMF 1 a, DMF 1 b, DMF 1 c, and DMF 1 d are inclined with respect to the bottom surface 111 .
  • the dielectric films DMF 1 a, DMF 1 b, DMF 1 c, and DMF 1 d are deposited in a direction almost perpendicular to the inclined plane K 1 .
  • the dielectric films of the dielectric multilayer film DMF 1 are deposited, for example, 25 times to 41 times.
  • FIG. 3 shows the dielectric films DMF 1 a, DMF 1 b, DMF 1 c, and DMF 1 d .
  • the number of depositions of the dielectric films in the Distributed Bragg Reflector (DBR) may be other values than those described above.
  • the number of depositions of the dielectric films is preferably an odd number, but an even number may be acceptable.
  • Each of the dielectric films DMF 1 a, DMF 1 b, DMF 1 c, and DMF 1 d has a thickness of, for example, 10 nm to 1,000 nm. Other thickness values of the dielectric films DMF 1 a, DMF 1 b , DMF 1 c, and DMF 1 d may be acceptable. Moreover, other material such as Al 2 O 3 may be employed for the dielectric films DMF 1 a, DMF 1 b, DMF 1 c, and DMF 1 d.
  • FIG. 4 is a view showing the concepts of reflection and transmission in the vicinity of the dielectric multilayer film DMF 1 in the light-emitting device 100 .
  • FIG. 4 shows the substrate 110 , the dielectric multilayer film DMF 1 , and the light-emitting layer 140 of all the components of the light-emitting device 100 .
  • a light LG 1 directed from the light-emitting layer 140 toward the substrate 110 is incident to a flat surface where the dielectric multilayer film DMF 1 is not formed and passes through the substrate 110 .
  • the light LG 1 is emitted from the second surface 110 b to an outside.
  • a light LG 2 a directed from the light-emitting layer 140 toward the substrate 110 firstly passes through the dielectric multilayer film DMF 1 , and is incident to the substrate 110 .
  • the light LG 2 a is reflected by the second surface 110 b and the reflected light LG 2 b is directed toward the light-emitting layer 140 .
  • the light LG 2 b is reflected twice by the back surface of the dielectric multilayer film DMF 1 , and is directed toward the second surface 110 b again.
  • the light LG 2 b is emitted from the second surface 110 b to an outside.
  • a light LG 3 a directed from the light-emitting layer 140 toward the substrate 110 is firstly reflected by the dielectric multilayer film DMF 1 , thereafter passes through another dielectric multilayer film DMF 1 , and is incident to the substrate 110 .
  • the light LG 3 a is emitted from the second surface 110 b to an outside.
  • the total radiant flux of the light-emitting device 100 having the dielectric multilayer film DMF 1 was higher by about 3% than that of the light-emitting device 100 having no dielectric multilayer film DMF 1 formed.
  • a substrate S 1 shown in FIG. 5 The substrate S 1 has a flat main surface S 1 a and a flat second surface S 1 b . Subsequently, as shown in FIG. 6 , the main surface S 1 a of the substrate S 1 is roughened to form a bottom surface and a plurality of protrusions 112 to make the first surface 110 a. Laser processing or etching may be employed. Through this processing, a flat bottom surface 111 and a plurality of protrusions 112 are formed on the main surface S 1 a of the substrate S 1 . In this way, the substrate 110 having an uneven structure on the first surface 110 a is obtained. This processing is not required by purchasing a substrate having an uneven structure.
  • the method of forming a dielectric multilayer film DMF 1 according to Embodiment 1 is described.
  • the method of forming a dielectric multilayer film DMF 1 comprises a mask formation step, a film formation step, and a mask removal step.
  • a mask M 1 is formed on the bottom surface 111 of the substrate 110 .
  • the mask M 1 is not formed on a plurality of protrusions 112 of the substrate 110 . That is, the protrusions 112 of the substrate 110 are exposed.
  • a dielectric multilayer film DMF 1 is formed on each of the protrusions 112 .
  • the dielectric multilayer film DMF 1 is formed through sputtering or a vapor deposition technique. Thus, the dielectric multilayer films DMF 1 are formed along the protrusions 112 . Moreover, a dielectric multilayer film DMFx is formed on the mask M 1 as well.
  • the mask M 1 is removed from the bottom surface 111 of the substrate 110 . That is, the mask M 1 and the dielectric multilayer film DMFx formed on the mask M 1 are removed. Then, the dielectric multilayer films DMF 1 shown in FIG. 2 are formed. As a result, the dielectric multilayer films DMF 1 are formed on the protrusions 112 of the substrate 110 , and the bottom surface 111 is exposed.
  • the semiconductor crystal layers are formed through epitaxial growth based on metalorganic chemical vapor deposition (MOCVD).
  • MOCVD metalorganic chemical vapor deposition
  • the carrier gas employed in the growth of semiconductor layers include hydrogen (H 2 ), nitrogen (N 2 ), and a mixture of hydrogen and nitrogen (H 2 +N 2 ).
  • Ammonia gas (NH 3 ) is used as a nitrogen source, and trimethylgallium (Ga(CH 3 ) 3 : (TMG)) is used as a gallium source.
  • Trimethylindium (In(CH 3 ) 3 : (TMI) is used as an indium source
  • trimethylaluminum (Al(CH 3 ) 3 : (TMA) is used as an aluminum source.
  • Silane (SiH 4 ) is used as an n-type dopant gas
  • cyclopentadienylmagnesium (Mg(C 5 H 5 ) 2 ) is used as a p-type dopant gas.
  • the mask formation step As described above, the mask formation step, the dielectric film formation step, and the mask removal step are performed.
  • a dielectric multilayer film DMF 1 having an inclined plane L 1 inclined with respect to a bottom surface 111 of a substrate 110 is formed.
  • a buffer layer 120 is formed on the bottom surface 111 of the substrate 110 .
  • the buffer layer 120 is formed on the bottom surface 111 , but is not formed on the dielectric multilayer film DMF 1 (refer to FIG. 9 ). That is, the buffer layer 120 is grown along the bottom surface 111 from the bottom surface 111 of the substrate 110 , which is not covered with the dielectric multilayer film DMF 1 .
  • an n-type semiconductor layer 130 is formed on the buffer layer 120 .
  • the n-type semiconductor layer 130 is grown from the buffer layer 120 formed on the bottom surface 111 .
  • the n-type semiconductor layer 130 is grown so as to cover the inclined plane L 1 of the dielectric multilayer film DMF 1 .
  • the substrate temperature is within a range of 1,080° C. to 1,140° C.
  • Silane (SiH 4 ) is appropriately supplied.
  • an n-type contact layer and an n-type superlattice layer are formed.
  • a light-emitting layer 140 is formed on the n-type semiconductor layer 130 .
  • a light-emitting layer 140 is formed.
  • an InGaN layer, a GaN layer, and an AlGaN layer are repeatedly deposited. Needless to say, other layered structure of the light-emitting layer 140 may be acceptable.
  • the substrate temperature is, for example, within a range of 700° C. to 900° C.
  • a p-type semiconductor layer 150 is formed on the light-emitting layer 140 .
  • cyclopentadienylmagnesium (Mg(C 5 H 5 ) 2 ) is used as a dopant gas.
  • a p-type superlattice layer and a p-type contact layer are formed.
  • the p-type semiconductor layer 150 after the formation is shown in FIG. 9 .
  • the semiconductor layers are partially removed through laser radiation or etching from the p-type semiconductor layer 150 side, to thereby expose the n-type contact layer 130 .
  • An n-electrode N 1 is formed on the thus-exposed region.
  • a p-electrode P 1 is formed on the p-type semiconductor layer 150 .
  • additional steps such as a step of covering the device with a protective film and a heat treatment step may be carried out. From the above, the light-emitting device 100 shown in FIG. 1 is produced.
  • the light-emitting device 100 according to Embodiment 1 is a flip-chip type light-emitting device. However, the present techniques may be employed for a face-up type light-emitting device.
  • the first conduction type was n-type
  • the second conduction type was p-type
  • the combination of conduction type may be inverted. That is, the first conduction type may be p-type, and the second conduction type may be n-type.
  • the second surface 110 b of the substrate 110 shown in FIG. 1 may be roughened, thereby, improving the light extraction efficiency from the second surface 110 b as a light extraction surface.
  • Each of the protrusions 112 has a conical shape. However, it may have a hexagonal pyramid shape. Moreover, it may have a truncated cone shape or hexagonal truncated pyramid shape.
  • the dielectric multilayer film DMF 1 comprises an inclined plane L 1 and an upper end surface disposed at a position corresponding to the top of the protrusion 112 .
  • the n-type semiconductor layer 130 is formed on the buffer layer 120 , the inclined planes, and the upper end surfaces thereof.
  • the sapphire substrate 110 was employed in Embodiment 1.
  • Other substrate than sapphire substrate such as a GaN substrate, a GaAs substrate, and a SiC substrate may be employed.
  • the light-emitting device 100 has the dielectric multilayer films DMF 1 on the protrusions 112 comprising the first surface 110 a of the substrate 110 .
  • the dielectric multilayer film DMF 1 transmits more light directed from the semiconductor layer toward the first surface 110 a of the substrate 110 , and reflects at the back surface thereof more light directed from the second surface 110 b of the substrate 110 toward the semiconductor layer. Therefore, the light firstly emitted from the semiconductor layer to the first surface 110 a of the substrate 110 is hardly incident to the semiconductor layer again. This achieves a light-emitting device 100 which can appropriately extract a light from the light extraction surface.
  • the semiconductor layer is grown from the bottom surface 111 where the dielectric multilayer film DMF 1 is not formed.
  • the aforementioned embodiment is merely an example. It is therefore understood that those skilled in the art can provide various modifications and variations of the technique, so long as those fall within the scope of the present technique.
  • the layered structure of the layered product should not be limited to those as illustrated, and the layered structure, the number of repetition of component layers, and other factors may be arbitrarily chosen.
  • the semiconductor layer growth technique is not limited to metalorganic chemical vapor deposition (MOCVD), and other techniques such as hydride vapor phase epitaxy (HVPE) and other liquid-phase epitaxy techniques may also be employed.
  • Embodiment 2 will now be described.
  • the substrate and the dielectric multilayer film of the light-emitting device according to Embodiment 2 differ from those of the light-emitting device according to Embodiment 1. Therefore, the substrate and the dielectric multilayer film different from Embodiment 1, and the production method therefor will be described.
  • FIG. 10 is a schematic view of the structure of a light-emitting device 200 according to Embodiment 2.
  • the light-emitting device 200 has a substrate 210 , a dielectric multilayer film DMF 2 , a buffer layer 220 , an n-type semiconductor layer 130 , a light-emitting layer 140 , a p-type semiconductor layer 150 , an n-electrode N 1 , and a p-electrode P 1 .
  • the substrate 210 has a first surface 210 a and a second surface 210 b.
  • the second surface 210 b is a light extraction surface.
  • an n-type semiconductor layer 130 is formed on the buffer layer 220 and inclined planes L 2 of the dielectric multilayer films DMF 2 .
  • FIG. 11 is an enlarged view showing a part of the vicinity of the substrate 210 .
  • the substrate 210 has the first surface 210 a.
  • the first surface 210 a is flat over the entire surface thereof. That is, the substrate 210 has no uneven structure on the first surface 210 a on the semiconductor layer side.
  • the first surface 210 a has a first flat portion 211 and a plurality of second flat portions 212 .
  • the first flat portion 211 and the second flat portions 212 are disposed on the same plane.
  • the first flat portion 211 is a part of the flat first surface 210 a.
  • the second flat portion 212 is the remaining portion of the flat first surface 210 a.
  • the buffer layer 220 is formed on the first flat portion 211 .
  • the dielectric multilayer films DMF 2 are formed on the second flat portions 212 . Therefore, the buffer layer 220 is not disposed on the dielectric multilayer films DMF 2 .
  • the dielectric multilayer films DMF 2 are formed on the second flat portions 212 .
  • the dielectric multilayer films DMF 2 are a plurality of protrusions protruding to the n-type semiconductor layer 130 .
  • Each of the dielectric multilayer films DMF 2 has a conical shape.
  • Each of the dielectric multilayer films DMF 2 has an inclined side plane L 2 .
  • the inclined side plane L 2 is a conical surface.
  • the inclined plane L 2 is an inclined plane inclined to the first surface 210 a.
  • An angle of the inclined plane L 2 to the first surface 210 a is within a range of 40° to 60°. The angle is not limited to this range.
  • FIG. 12 is an enlarged view showing a part of the vicinity of the dielectric multilayer film DMF 2 .
  • the dielectric multilayer film DMF 2 is a Distributed Bragg Reflector (DBR).
  • the dielectric multilayer film DMF 2 comprises dielectric films DMF 2 a, DMF 2 b, DMF 2 c, DMF 2 d, DMF 2 e , DMF 2 f, DMF 2 g, DMF 2 h, and so on.
  • the dielectric films DMF 2 a , DMF 2 c, DMF 2 e, and DMF 2 g are formed of the same material, for example, TiO 2 .
  • the dielectric films DMF 2 b, DMF 2 d, DMF 2 f , and DMF 2 h are formed of the same material, for example, SiO 2 , which is different from the material of the dielectric films DMF 2 a, DMF 2 c, DMF 2 e, and DMF 2 g.
  • FIG. 13 is a view showing the concepts of reflection and transmission in the vicinity of the dielectric multilayer film DMF 2 in the light-emitting device 200 .
  • the substrate 210 , the dielectric multilayer film DMF 2 , and the light-emitting layer 140 are extracted from the constituent elements of the light-emitting device 200 , and shown in FIG. 13 .
  • a light LG 4 directed from the light-emitting layer 140 toward the substrate 210 passes through the dielectric multilayer film DMF 2 and is incident to the substrate 210 as shown in FIG. 13 .
  • the light LG 4 is emitted from the second surface 210 b to an outside.
  • a light LG 5 b reflected by the second surface 210 b is directed from the second surface 210 b of the substrate 210 toward the light-emitting layer 140 .
  • the light LG 5 b is reflected by the bottom surface of another dielectric multilayer film DMF 2 , i.e., the flat second surface 212 , and is directed toward the second surface 210 b again.
  • the step of preparing the substrate 210 of Embodiment 2 is described. Firstly, there is provided a substrate 210 shown in FIG. 14 .
  • the substrate 210 has a flat first surface 210 a and a flat second surface 210 b.
  • the first surface 210 a is flat over the entire surface thereof.
  • a dielectric multilayer film DMF 2 i is formed on the first surface 210 a of the substrate 210 .
  • a uniform dielectric multilayer film DMF 2 i is formed over the entire surface of the first surface 210 a of the substrate 210 .
  • the surface of uniform dielectric multilayer film DMF 2 i is flat.
  • the number of uniform dielectric multilayer films DMF 2 i is 1 , that is, the DMF 2 i is continuous.
  • a plurality of resists R 1 is formed on the uniform dielectric multilayer film DMF 2 i . These resists R 1 are disposed in positions where a plurality of dielectric multilayer films DMF 2 is formed.
  • FIG. 17 shows a state in the middle of etching.
  • the resists R 1 have disappeared, and inclined planes L 3 are formed.
  • the inclined planes L 3 become the inclined planes L 2 .
  • a plurality of dielectric multilayer films DMF 2 is formed from the uniform dielectric multilayer film DMF 2 i .
  • the first surface 210 a of the substrate 210 is partially exposed. The thus-exposed portion corresponds to the first flat portion 211 .
  • etching may be finished in the state shown in FIG. 17 .
  • the dielectric multilayer film DMF 2 j has a truncated cone shape.
  • a desired shape of a plurality of dielectric multilayer films DMF 2 is obtained by etching, considering the shape of the resist R 1 , the etching time, and others.
  • the method for producing the semiconductor light-emitting device according to Embodiment 2, same as in Embodiment 1, has a substrate preparation step, a dielectric multilayer film formation step, a buffer layer formation step, a first semiconductor layer formation step, a light-emitting layer formation step, a p-type semiconductor layer formation step, and an electrode formation step.
  • a plurality of dielectric multilayer films DMF 2 is formed on the second flat surface 212 of the substrate 210 by performing the film formation step, the resist disposition step, and the etching step to the substrate 210 prepared in the aforementioned substrate preparation step. Through etching, the first flat portion 211 is exposed.
  • a buffer layer 220 is formed on the first flat portion 211 partially exposed.
  • Performing the first semiconductor layer formation step, the light-emitting layer formation step, the p-type semiconductor layer formation step, and the electrode formation step after the buffer layer formation step is same as in Embodiment 1.
  • Embodiment 1 Variation of Embodiment 1 can be used accordingly.
  • the light-emitting device 200 has a substrate 210 and a plurality of dielectric multilayer films DMF 2 .
  • the dielectric multilayer film DMF 2 is a Distributed Bragg Reflector (DBR).
  • DBR Distributed Bragg Reflector
  • the dielectric multilayer film DMF 2 transmits more light, which is directed from the semiconductor layer toward the first flat surface 212 , into the substrate 210 , and the bottom surface of the MDF 2 reflects more light, which is directed from the second surface 210 b of the substrate 210 toward the semiconductor layer, to the second surface 210 b. Therefore, a light once emitted from the semiconductor layer to the substrate 210 is hardly incident to the semiconductor layer again. This achieves a light-emitting device 200 which attains suitable light extraction from the light extraction surface.
  • DBR Distributed Bragg Reflector
  • a semiconductor layer is grown from the bottom surface 211 where the dielectric multilayer film DMF 2 is not formed.
  • the aforementioned embodiment is merely an example. It is therefore understood that those skilled in the art can provide various modifications and variations of the technique, so long as those fall within the scope of the present technique.
  • the layered structure of the layered product should not be limited to those as illustrated, and the layered structure, the number of repetition of component layers, and other factors may be arbitrarily chosen.
  • the semiconductor layer growth technique is not limited to metalorganic chemical vapor deposition (MOCVD), and other techniques such as hydride vapor phase epitaxy (HVPE) and other liquid-phase epitaxy techniques may also be employed.

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