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US20150294910A1 - Interconnection structure having a via structure and fabrication thereof - Google Patents

Interconnection structure having a via structure and fabrication thereof Download PDF

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Publication number
US20150294910A1
US20150294910A1 US14/748,811 US201514748811A US2015294910A1 US 20150294910 A1 US20150294910 A1 US 20150294910A1 US 201514748811 A US201514748811 A US 201514748811A US 2015294910 A1 US2015294910 A1 US 2015294910A1
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forming
substrate
via hole
pad
interconnection structure
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US14/748,811
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US10424508B2 (en
Inventor
Hsin-Chang Tsai
Peng-Hsin LEE
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Ancora Semiconductors Inc
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Delta Electronics Inc
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Assigned to ANCORA SEMICONDUCTORS INC. reassignment ANCORA SEMICONDUCTORS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DELTA ELECTRONICS, INC.
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    • H10W20/023—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H10P14/47—
    • H10P34/42—
    • H10W20/0249—
    • H10W20/0261—
    • H10W20/057—
    • H10W20/0698—
    • H10W20/077—
    • H10W20/20—
    • H10W70/481—
    • H10W90/00—
    • H10W90/811—
    • H10W99/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H10W70/65—
    • H10W72/01923—
    • H10W72/072—
    • H10W72/07236—
    • H10W72/07254—
    • H10W72/241—
    • H10W72/244—
    • H10W72/247—
    • H10W72/252—
    • H10W72/29—
    • H10W72/871—
    • H10W72/879—
    • H10W72/881—
    • H10W72/922—
    • H10W72/9226—
    • H10W72/923—
    • H10W72/934—
    • H10W72/942—
    • H10W72/944—
    • H10W72/952—
    • H10W90/722—
    • H10W90/724—

Definitions

  • This invention relates generally to semiconductor manufacturing, and specifically, to a method for fabricating semiconductor components and interconnects with contacts on opposing sides.
  • Semiconductor components include external contacts that allow electrical connections to be made from the outside to the integrated circuits contained in the semiconductor components.
  • a semiconductor die for example, includes patterns of bond pads formed on the face of the die.
  • Semiconductor packages such as chip scale packages, also include external contacts.
  • a component typically includes only one set of external contacts on either the face side (circuit side) or the back side of the component. However, it is sometimes necessary for a component to have external contacts on both sides.
  • a through-silicon via also known as a through-substrate via
  • a through-silicon via is a conductive feature formed in a semiconductor substrate (wafer or die) to electrically connect external contacts from both sides.
  • the TSV feature vertically passes through the semiconductor substrate, providing for stacked wafer/die packaging methods and allowing for electrical connection between circuits within separate wafers or chips.
  • a hole is etched into the semiconductor substrate, and sometimes through the interconnect structure as well. The hole may then be lined with various isolating layers and/or various metal layers. The hole is then filled with a conductive material, typically copper (Cu), which becomes the major part of a TSV.
  • Cu copper
  • an electrode electroplating method is used for the conducive filling materials to be disposed in the hole of the through silicon via (TSV), wherein a seeding layer is formed by a vacuum technique, such as plasma vapor deposition, prior to formation of the conductive filling material.
  • TSV through silicon via
  • the vacuum technique requires high priced equipment, which increases device costs.
  • the invention provides an interconnection structure.
  • a substrate has at least one electric device formed adjacent to a first side of the substrate and a via hole formed therethrough.
  • a via structure is disposed in the via hole having a first side neighboring the first side of the substrate, wherein the via structure does not exceed the first side of the via hole.
  • a first pad is disposed on the first side of the substrate and covering the via hole, wherein the first pad is adjoined to the via structure and electrically connects with the at least one electric device.
  • the invention provides a method of forming an interconnection structure, comprising providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure comprises a conductive material and is adjoined to the first pad.
  • the invention provides a method for forming an interconnection structure, comprising providing a substrate, forming a via hole through the substrate, and performing a screen printing process on the first side of the substrate to fill a conductive material into the via hole so as to form a via structure in the via hole and a first pad disposed on a first side of the substrate, adjoined to the via structure.
  • FIG. 1A to FIG. 1F show intermediate stages of cross sections of a method for forming the interconnect structure of an embodiment of the invention.
  • FIG. 2 show an intermediate stage of a cross section of a method for forming the interconnect structure of an embodiment of the invention.
  • FIG. 3A to FIG. 3F show intermediate stages of cross sections of a method for forming the interconnect structure of an embodiment of the invention.
  • a substrate 102 comprising a first side 106 and a second side 108 opposite to the first side 106 is provided.
  • the substrate 102 can be any suitable semiconductor material.
  • the substrate 102 can be Si, SiC, Ge, SiGe, GaAs, InAs, InP or GaN.
  • a buffer layer 104 is formed on the substrate 102 .
  • the buffer layer 104 can be a nitride based material to provide good adhesion for the layers thereon and also solve issues of lattice mismatch, but the invention is not limited thereto.
  • the buffer layer 104 can be formed of any suitable material.
  • the buffer layer 104 can be aluminum nitride.
  • a first channel layer 110 and a second channel layer 112 are formed on the buffer layer 104 .
  • the first channel layer 110 can be GaN and the second channel layer 112 can be AlGaN.
  • a first metal layer (not shown) is formed on the first channel layer 110 and is then patterned by lithography and etching to form a source electrode 118 and a drain electrode 120 .
  • the first metal layer is a stack of Ti, Al, Ni and/or Au layers.
  • RTA rapid thermal annealing
  • a second metal layer (not shown) is deposited on the first channel layer 110 and then patterned by lithography and etching to form a gate electrode 116 .
  • a passivation layer 122 such as silicon nitride and silicon oxide, is formed to protect the device thereunder.
  • the first channel layer 110 , the second channel layer 112 , the gate electrode 116 , the source electrode 118 , and the drain electrode 120 constitute an electric device 114 adjacent to the first side 106 of the substrate 102 .
  • the electric device 114 is disposed at the first side 106 of the substrate 102 , but the invention is not limited thereto.
  • the electric device 114 can be disposed at the second side 108 of the substrate 102 .
  • the electric device 114 is a nitride-based semiconductor device.
  • the invention is not limited to a nitride-based semiconductor device.
  • the invention can be applied to any semiconductor device, such as a silicon based device, III-V group device and/or SOI device.
  • a photosensitive layer 124 is formed over the substrate 102
  • the photosensitive layer 124 is patterned by a lithography process and the substrate 102 is further etched using the patterned photosensitive layer 124 as a mask to form a via hole 126 extending through the substrate 102 .
  • the via hole 126 can be formed with drilling using a laser beam.
  • an insulating layer 128 is formed on the sidewall of the via hole 126 for protection.
  • the insulating layer 128 is silicon oxide and can be formed by thermal oxidation or liquid phase deposition (LPD).
  • LPD liquid phase deposition
  • a first pad 130 is formed on the first side 106 of the substrate 102 and covers a first opening 111 of the via hole 126 .
  • the first pad 130 can electrically connect to the electrical device 114 and a second pad 134 formed in subsequent steps, and can comprise a protrusion portion extending into the via hole 126 .
  • the first pad 130 can comprise silver paste and can be formed by screen printing. Referring to FIG.
  • an electroplating process is performed using the first pad 130 as a seed layer to deposit a via structure 132 which fills the via hole 126 .
  • the via structure 132 and the first pad 130 comprises the same material.
  • the via structure 132 and the first pad 130 comprises different materials.
  • the via structure 132 can comprise copper.
  • the via structure 132 since the via structure 132 is formed sequentially after forming the first pad 130 , the via structure 132 does not exceed the first opening 111 of the via hole 126 neighboring the first side 106 of the substrate 102 , but can exceed a second opening 113 of the via hole 126 neighboring the second side 108 of the substrate 102 .
  • a second pad 134 is formed on the second side 108 of the substrate 102 .
  • the second pad 134 can comprise silver paste and can be formed by screen printing.
  • the invention can further comprise providing another semiconductor substrate which has another electric device thereto, wherein the other electric device electrically connects to the second pad.
  • the electrical device 114 is a high electron mobility transistor (HEMT) and the substrate 102 comprises a conductive substrate.
  • the source electrode 118 is electrically connected to the conductive substrate through the via structure 132 .
  • a method for forming the interconnect structure of another embodiment of the invention is illustrated in accordance with FIG. 2 .
  • the embodiment of the method for forming the interconnect structure of FIG. 2 is similar to the method of FIGS. 1E ⁇ 1F and for simplicity its detailed descriptions of similar steps are omitted.
  • the method for forming the interconnect structure of FIG. 2 is different from the method for forming the interconnect structure of FIGS. 1E ⁇ 1F in that the first pad 202 and the via structure 204 are formed by a single step.
  • the screen print for forming the first pad 202 can also fill the through hole 126 , so that formation of the first pad 202 and the via structure 204 can be performed by a single screen printing step.
  • a method for forming the interconnect structure of yet another embodiment of the invention is illustrated in accordance with FIG. 3A to FIG. 3F .
  • the method of the embodiment illustrated in FIG. 3A to FIG. 3F differs from the embodiment illustrated in FIG. 1A to FIG. 1F by the forming of the pad on the second side of the substrate opposite to the first side with the electric device prior to forming the via structure.
  • a substrate 302 comprising a first side 306 and a second side 308 is provided.
  • the substrate 302 can be any suitable semiconductor material.
  • the substrate 302 can be Si, SiC, Ge, SiGe, GaAs, InAs, InP or GaN.
  • a buffer layer 304 is formed on the substrate 302 .
  • the buffer layer 304 can be aluminum nitride.
  • a first channel layer 310 and a second channel layer 312 are formed on the buffer layer 304 .
  • the first channel layer 310 can be GaN and the second channel layer 312 can be AlGaN.
  • a first metal layer (not shown) is formed on the first channel layer 310 and is then patterned by lithography and etching to form a source electrode 318 and a drain electrode 320 .
  • the first metal layer is a stack of Ti, Al, Ni or Au layers.
  • RTA rapid thermal annealing
  • a second metal layer (not shown) is deposited and then patterned by lithography and etching to form a gate electrode 316 .
  • An passivation layer 322 such as silicon nitride and silicon oxide, is formed to protect the semiconductor device thereunder.
  • the first channel layer 310 , the second channel layer 312 , the gate electrode 316 , the source electrode 318 , and the drain electrode 320 constitute an electric device 314 which is adjacent to the first side 306 of the substrate 302 .
  • the electric device 314 is a nitride-based semiconductor device.
  • the invention is not limited to being applied to a nitride-based semiconductor device.
  • the invention can be applied to any semiconductor device, such as a silicon based device, III-V group device and/or SOI device.
  • a photosensitive layer 324 is formed over the substrate 302 to protect the electric device 314 .
  • the photosensitive layer 324 is patterned by a lithography process and the substrate 302 is further etched using the patterned photosensitive layer 324 as a mask to form a via hole 326 extending through the substrate 302 is formed.
  • the via hole 326 can be formed by a laser beam.
  • an insulating layer 328 is formed on the sidewall of the via hole 326 for protection.
  • the insulating layer 328 is silicon oxide and can be formed by thermal oxidation or liquid phase deposition (LPD).
  • a first pad 330 is formed on the second side 308 of the substrate 302 and covers a second opening 311 of the via hole 326 .
  • the first pad 330 can comprise silver paste and can be formed by screen printing.
  • an electroplating process is performed using the first pad 330 as a seed layer to form a via structure 332 which fills the via hole 326 .
  • the via structure 332 and the first pad 330 comprise the same material. In another embodiment, the via structure 332 and the first pad 330 comprise different materials.
  • the via structure 332 can comprise copper.
  • the via structure 332 since the via structure 332 is formed sequentially after forming the first pad 330 , the via structure 332 does not exceed of the second opening 311 neighboring the second side 308 of the substrate 302 , but can exceed a first opening 313 neighboring the first side 306 of the substrate 302 .
  • a second pad 334 such as silver, is formed on the first side 306 of the substrate 302 .
  • the method for forming the interconnect structure of embodiments of the invention has advantages as follows. Since the method for forming the interconnect structure of the invention forms the via structure using electroplating with the first pad as a seed layer, no vacuum is required for forming the interconnect structure. Therefore, the method of the invention can produce semiconductor devices with lower costs.

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Abstract

A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.

Description

    CROSS REFERENCE TO RELATED APPLICATION
  • This application is a Divisional of pending U.S. patent application Ser. No. 13/675,297, filed Nov. 13, 2012 and entitled “INTERCONNECTION STRUCTURE HAVING A VIA STRUCTURE”.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • This invention relates generally to semiconductor manufacturing, and specifically, to a method for fabricating semiconductor components and interconnects with contacts on opposing sides.
  • 2. Description of the Related Art
  • Semiconductor components include external contacts that allow electrical connections to be made from the outside to the integrated circuits contained in the semiconductor components. A semiconductor die, for example, includes patterns of bond pads formed on the face of the die. Semiconductor packages, such as chip scale packages, also include external contacts. Typically, a component includes only one set of external contacts on either the face side (circuit side) or the back side of the component. However, it is sometimes necessary for a component to have external contacts on both sides.
  • In semiconductor technology, a through-silicon via, also known as a through-substrate via, is a conductive feature formed in a semiconductor substrate (wafer or die) to electrically connect external contacts from both sides. The TSV feature vertically passes through the semiconductor substrate, providing for stacked wafer/die packaging methods and allowing for electrical connection between circuits within separate wafers or chips. There are a number of ways to create a TSV. Typically, a hole is etched into the semiconductor substrate, and sometimes through the interconnect structure as well. The hole may then be lined with various isolating layers and/or various metal layers. The hole is then filled with a conductive material, typically copper (Cu), which becomes the major part of a TSV.
  • In traditional technologies, an electrode electroplating method is used for the conducive filling materials to be disposed in the hole of the through silicon via (TSV), wherein a seeding layer is formed by a vacuum technique, such as plasma vapor deposition, prior to formation of the conductive filling material. The vacuum technique requires high priced equipment, which increases device costs.
    • BRIEF SUMMARY OF INVENTION
  • The invention provides an interconnection structure. A substrate has at least one electric device formed adjacent to a first side of the substrate and a via hole formed therethrough. A via structure is disposed in the via hole having a first side neighboring the first side of the substrate, wherein the via structure does not exceed the first side of the via hole. A first pad is disposed on the first side of the substrate and covering the via hole, wherein the first pad is adjoined to the via structure and electrically connects with the at least one electric device.
  • The invention provides a method of forming an interconnection structure, comprising providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure comprises a conductive material and is adjoined to the first pad.
  • The invention provides a method for forming an interconnection structure, comprising providing a substrate, forming a via hole through the substrate, and performing a screen printing process on the first side of the substrate to fill a conductive material into the via hole so as to form a via structure in the via hole and a first pad disposed on a first side of the substrate, adjoined to the via structure.
    • BRIEF DESCRIPTION OF DRAWINGS
  • The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
  • FIG. 1A to FIG. 1F show intermediate stages of cross sections of a method for forming the interconnect structure of an embodiment of the invention.
  • FIG. 2 show an intermediate stage of a cross section of a method for forming the interconnect structure of an embodiment of the invention.
  • FIG. 3A to FIG. 3F show intermediate stages of cross sections of a method for forming the interconnect structure of an embodiment of the invention.
    •  DETAILED DESCRIPTION OF INVENTION
  • It is understood that specific embodiments are provided as examples to teach the broader inventive concept, and one of ordinary skill in the art can easily apply the teaching of the present disclosure to other methods or apparatus. The following discussion is only used to illustrate the invention, not limit the invention.
  • A method for forming the interconnect structure of an embodiment of the invention is illustrated in accordance with FIG. 1A to FIG. 1F. First, referring to FIG. 1A, a substrate 102 comprising a first side 106 and a second side 108 opposite to the first side 106 is provided. The substrate 102 can be any suitable semiconductor material. For example, the substrate 102 can be Si, SiC, Ge, SiGe, GaAs, InAs, InP or GaN. Next, a buffer layer 104 is formed on the substrate 102. In an embodiment of the invention, the buffer layer 104 can be a nitride based material to provide good adhesion for the layers thereon and also solve issues of lattice mismatch, but the invention is not limited thereto. The buffer layer 104 can be formed of any suitable material. In an embodiment of the invention, the buffer layer 104 can be aluminum nitride. A first channel layer 110 and a second channel layer 112 are formed on the buffer layer 104. In an embodiment, the first channel layer 110 can be GaN and the second channel layer 112 can be AlGaN. Thereafter, a first metal layer (not shown) is formed on the first channel layer 110 and is then patterned by lithography and etching to form a source electrode 118 and a drain electrode 120. In an embodiment of the invention, the first metal layer is a stack of Ti, Al, Ni and/or Au layers. Furthermore, a rapid thermal annealing (RTA) process can be performed to the first metal layer. A second metal layer (not shown) is deposited on the first channel layer 110 and then patterned by lithography and etching to form a gate electrode 116. Next, a passivation layer 122, such as silicon nitride and silicon oxide, is formed to protect the device thereunder. The first channel layer 110, the second channel layer 112, the gate electrode 116, the source electrode 118, and the drain electrode 120 constitute an electric device 114 adjacent to the first side 106 of the substrate 102. In the embodiment, the electric device 114 is disposed at the first side 106 of the substrate 102, but the invention is not limited thereto. The electric device 114 can be disposed at the second side 108 of the substrate 102. Furthermore, in the embodiment, the electric device 114 is a nitride-based semiconductor device. However, the invention is not limited to a nitride-based semiconductor device. The invention can be applied to any semiconductor device, such as a silicon based device, III-V group device and/or SOI device.
  • Next, referring to FIG. 1B, a photosensitive layer 124 is formed over the substrate 102 Thereafter, referring to FIG. 1C, the photosensitive layer 124 is patterned by a lithography process and the substrate 102 is further etched using the patterned photosensitive layer 124 as a mask to form a via hole 126 extending through the substrate 102. In an embodiment, the via hole 126 can be formed with drilling using a laser beam.
  • Referring to FIG. 1D, an insulating layer 128 is formed on the sidewall of the via hole 126 for protection. In an embodiment, the insulating layer 128 is silicon oxide and can be formed by thermal oxidation or liquid phase deposition (LPD). Referring to FIGS. 1E˜1F, a first pad 130 is formed on the first side 106 of the substrate 102 and covers a first opening 111 of the via hole 126. The first pad 130 can electrically connect to the electrical device 114 and a second pad 134 formed in subsequent steps, and can comprise a protrusion portion extending into the via hole 126. In an embodiment, the first pad 130 can comprise silver paste and can be formed by screen printing. Referring to FIG. 1F, an electroplating process is performed using the first pad 130 as a seed layer to deposit a via structure 132 which fills the via hole 126. In an embodiment, the via structure 132 and the first pad 130 comprises the same material. In another embodiment, the via structure 132 and the first pad 130 comprises different materials. For example, the via structure 132 can comprise copper. As shown in FIG. 1F, since the via structure 132 is formed sequentially after forming the first pad 130, the via structure 132 does not exceed the first opening 111 of the via hole 126 neighboring the first side 106 of the substrate 102, but can exceed a second opening 113 of the via hole 126 neighboring the second side 108 of the substrate 102. Next, a second pad 134 is formed on the second side 108 of the substrate 102. In an embodiment, the second pad 134 can comprise silver paste and can be formed by screen printing. Though not shown in the figure, the invention can further comprise providing another semiconductor substrate which has another electric device thereto, wherein the other electric device electrically connects to the second pad.
  • In an embodiment of the invention, the electrical device 114 is a high electron mobility transistor (HEMT) and the substrate 102 comprises a conductive substrate. The source electrode 118 is electrically connected to the conductive substrate through the via structure 132.
  • A method for forming the interconnect structure of another embodiment of the invention is illustrated in accordance with FIG. 2. The embodiment of the method for forming the interconnect structure of FIG. 2 is similar to the method of FIGS. 1E˜1F and for simplicity its detailed descriptions of similar steps are omitted. The method for forming the interconnect structure of FIG. 2 is different from the method for forming the interconnect structure of FIGS. 1E˜1F in that the first pad 202 and the via structure 204 are formed by a single step. In the embodiment, when the through hole 126 depth is not great, for example the depth of the through hole is 20 nm to 50 nm, as shown in FIG. 2, the screen print for forming the first pad 202 can also fill the through hole 126, so that formation of the first pad 202 and the via structure 204 can be performed by a single screen printing step.
  • A method for forming the interconnect structure of yet another embodiment of the invention is illustrated in accordance with FIG. 3A to FIG. 3F. The method of the embodiment illustrated in FIG. 3A to FIG. 3F differs from the embodiment illustrated in FIG. 1A to FIG. 1F by the forming of the pad on the second side of the substrate opposite to the first side with the electric device prior to forming the via structure. First, referring to FIG. 3A, a substrate 302 comprising a first side 306 and a second side 308 is provided. The substrate 302 can be any suitable semiconductor material. For example, the substrate 302 can be Si, SiC, Ge, SiGe, GaAs, InAs, InP or GaN. Next, a buffer layer 304 is formed on the substrate 302. In an embodiment of the invention, the buffer layer 304 can be aluminum nitride. A first channel layer 310 and a second channel layer 312 are formed on the buffer layer 304. In an embodiment, the first channel layer 310 can be GaN and the second channel layer 312 can be AlGaN. Thereafter, a first metal layer (not shown) is formed on the first channel layer 310 and is then patterned by lithography and etching to form a source electrode 318 and a drain electrode 320. In an embodiment of the invention, the first metal layer is a stack of Ti, Al, Ni or Au layers. Furthermore, a rapid thermal annealing (RTA) process can be performed to the first metal layer. A second metal layer (not shown) is deposited and then patterned by lithography and etching to form a gate electrode 316. An passivation layer 322, such as silicon nitride and silicon oxide, is formed to protect the semiconductor device thereunder. The first channel layer 310, the second channel layer 312, the gate electrode 316, the source electrode 318, and the drain electrode 320 constitute an electric device 314 which is adjacent to the first side 306 of the substrate 302. In the embodiment, the electric device 314 is a nitride-based semiconductor device. However, the invention is not limited to being applied to a nitride-based semiconductor device. The invention can be applied to any semiconductor device, such as a silicon based device, III-V group device and/or SOI device.
  • Next, referring to FIG. 3B, a photosensitive layer 324 is formed over the substrate 302 to protect the electric device 314. Thereafter, referring to FIG. 3C, the photosensitive layer 324 is patterned by a lithography process and the substrate 302 is further etched using the patterned photosensitive layer 324 as a mask to form a via hole 326 extending through the substrate 302 is formed. In an embodiment, the via hole 326 can be formed by a laser beam.
  • Referring to FIG. 3D, an insulating layer 328 is formed on the sidewall of the via hole 326 for protection. In an embodiment, the insulating layer 328 is silicon oxide and can be formed by thermal oxidation or liquid phase deposition (LPD). Referring to FIG. 3E, a first pad 330 is formed on the second side 308 of the substrate 302 and covers a second opening 311 of the via hole 326. In an embodiment, the first pad 330 can comprise silver paste and can be formed by screen printing. Referring to FIG. 3F, an electroplating process is performed using the first pad 330 as a seed layer to form a via structure 332 which fills the via hole 326. In an embodiment, the via structure 332 and the first pad 330 comprise the same material. In another embodiment, the via structure 332 and the first pad 330 comprise different materials. For example, the via structure 332 can comprise copper. As shown in FIG. 3F, since the via structure 332 is formed sequentially after forming the first pad 330, the via structure 332 does not exceed of the second opening 311 neighboring the second side 308 of the substrate 302, but can exceed a first opening 313 neighboring the first side 306 of the substrate 302. Next, a second pad 334, such as silver, is formed on the first side 306 of the substrate 302.
  • The method for forming the interconnect structure of embodiments of the invention has advantages as follows. Since the method for forming the interconnect structure of the invention forms the via structure using electroplating with the first pad as a seed layer, no vacuum is required for forming the interconnect structure. Therefore, the method of the invention can produce semiconductor devices with lower costs.
  • While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. It is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.

Claims (12)

What is claimed is:
1. A method of forming an interconnection structure comprising:
providing a substrate having a first side and a second side opposite to the first side;
forming a via hole through the substrate, wherein the via hole has a first opening neighboring the first side and a second opening neighboring the second side;
forming a first pad covering the first opening; and
forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure comprises a conductive material and is adjoined to the first pad.
2. The method of forming an interconnection structure as claimed in claim 1, further comprising:
forming at least one electric device on the substrate; and
forming a photosensitive layer on the substrate covering the at least one electric device prior to forming the via hole.
3. The method of forming an interconnection structure as claimed in claim 1, further comprising forming an insulating layer surrounding a sidewall of the via hole prior to forming the via structure.
4. The method of forming an interconnection structure as claimed in claim 1, wherein forming the first pad comprises performing a first metal screen printing process to form the first pad covering the first opening.
5. The method of forming an interconnection structure as claimed in claim 1, further comprising forming a second pad covering the via hole subsequent to forming the via structure.
6. The method of forming an interconnection structure as claimed in claim 1, wherein forming the via hole through the substrate comprises drilling the via hole through the semiconductor substrate with a laser beam.
7. The method of forming an interconnection structure as claimed in claim 1, wherein forming the via structure is performed by electric plating using the first pad as a seed layer.
8. A method for forming an interconnection structure, comprising:
providing a substrate;
forming a via hole through the semiconductor substrate; and
performing a screen printing process on a first side of the semiconductor substrate to fill a conductive material into the via hole so as to form a via structure in the via hole and a first pad disposed on a first side of the substrate, adjoined to the via structure.
9. The method for forming an interconnection structure as claimed in claim 8, further comprising:
forming at least one electric device on the substrate; and
forming a photosensitive layer on the substrate covering the at least one electric device prior to forming the via hole.
10. The method for forming an interconnection structure as claimed in claim 8, wherein the electric device is located on the first side of the substrate.
11. The method for forming an interconnection structure as claimed in claim 8, wherein the electric device is located on a second side of the substrate opposite to the first side of the substrate.
12. The method for forming an interconnection structure as claimed in claim 8, further comprising forming an insulating layer surrounding a sidewall of the via hole prior to forming the via structure.
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