US20150249192A1

US20150249192A1 - Light-emitting device

Info

Publication number: US20150249192A1
Application number: US14/714,564
Authority: US
Inventors: Chao-Hsing Chen
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2012-06-19
Filing date: 2015-05-18
Publication date: 2015-09-03
Also published as: CN103515513B; US9034672B2; TWI613840B; CN103515513A; US20130337591A1; US20170256683A1; TW201401572A

Abstract

A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.

Description

REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. patent application Ser. No. 13/527,139, filed Jun. 19, 2012, now pending, the entirety of which is hereby incorporated by reference.

BACKGROUND

1. Technical Field
The present disclosure relates to a light-emitting device, and more particularly, to a light-emitting device having multiple optical elements.
2. Description of the Related Art
An optoelectronic device, such as a light-emitting diode (LED) package, has been applied widely to optical display devices, traffic signals, data storing devices, communication devices, illumination devices, and medical apparatuses. The LED can be connected with other elements to form a light-emitting device. FIG. 1 illustrates a schematic view of a conventional light-emitting device. A conventional light-emitting device 1 includes a submount 12 with a circuit 14; a solder 16 on the submount 12, wherein an LED 11 is adhesively fixed on the submount 12 by the solder 16; and an electrical-connecting structure 18 electrically connecting the n-type electrode 15 with the circuit 14. The submount 12 can be a lead frame or a mounting substrate for circuit design and heat dissipation of the light-emitting apparatus 1. However, because of the trend of small and slim commercial electronic product, the development of the optoelectronic device also enters an era of miniature package. One promising packaging design for semiconductor and optoelectronic device is the Chip-Level Package (CLP).

SUMMARY OF THE DISCLOSURE

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide easy understanding of the application, are incorporated herein and constitute a part of this specification. The drawings illustrate embodiments of the application and, together with the description, serve to illustrate the principles of the application.

FIG. 1 illustrates a cross-sectional view of a conventional light-emitting device.

FIGS. 2A-2D illustrate a flow chart of the manufacturing process of a light-emitting device in accordance with an embodiment of the present application.

FIG. 3 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.

FIG. 4 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.

FIG. 5 illustrates a cross-sectional view of a light-emitting device in accordance with another embodiment of the present application.

FIG. 6 illustrates a schematic diagram of a light-generating device in accordance with an embodiment of the present application.

FIG. 7 illustrates a schematic diagram of a back light module in accordance with an embodiment of the present application.

DETAILED DESCRIPTION OF THE EMBODIMENTS

To better and concisely explain the disclosure, the same name or the same reference number given or appeared in different paragraphs or figures along the specification should has the same or equivalent meanings while it is once defined anywhere of the disclosure.
The following shows the description of the embodiments of the present disclosure in accordance with the drawings.
FIGS. 2A-2D illustrate a flow chart of the manufacturing process of a light-emitting device 2 in accordance with an embodiment of the present disclosure. Referring to FIG. 2A, a first optical element 22 is formed on a first carrier 20 and includes an opening 222 to expose the first carrier 20. A light-emitting element 24 is formed on the exposed portion of the first carrier 20 and a wavelength-converting layer 26 is formed on the light-emitting element 24, as shown in FIG. 2B. In another embodiment, an electronic component (not shown) can be formed on the first carrier 20 as well. Referring to FIG. 2C, a second optical element 28 is formed on the wavelength-converting layer 26. A bonding layer 21 is formed under a second carrier 23, and/or on the first optical element 22 and the second optical element 28. The second carrier 23 is bonded to the second optical element 28 through a bonding process. The first carrier 20 is removed. A conductive structure 25 is formed under the first optical element 22 and the light-emitting element 24 to form the light-emitting device 2, wherein the conductive structure 25 is electrically connected with the light-emitting element 24.
The first carrier 20 and/or the second carrier 23 support the first optical element 22, the second optical element 28, and the light-emitting element 24. The material of the first carrier 20 and/or the second carrier 23 includes conductive material such as Diamond Like Carbon (DLC), Metal Matrix Composite (MMC), Ceramic Matrix Composite (CMC), Polymer Matrix Composite (PMC), Cu, Al, Si, Mo, Cu—Sn, Cu—Zn, Cu—Cd, Ni—Sn, Ni—Co, Au alloy, SiC, GaP, GaAsP, InP, LiGaO₂, or LiAlO₂, or insulating material such as diamond, glass, polymer, epoxy, quartz, acryl, Al₂O₃, ZnO, or MN.
The first optical element 22 and/or the second optical element 28 can guide and/or extract light emitted from the light-emitting element 24 to the environment for improving the light extraction efficiency of the light-emitting device 2. The material of the first optical element 22 and/or the second optical element 28 can be transparent material such as epoxy, polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Sub, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, fluorocarbon polymer, glass, Al₂O₃, SINR, spin-on-glass (SOG), or the combination thereof. In another embodiment, the first optical element 22 can be reflector including metal such as Cu, Al, Sn, Au, Ag, Ti, Ni, Ag—Ti, Ni—Sn, Au alloy, Ni—Ag, Ti—Al, or the combination thereof. In another embodiment, a reflective layer can be formed on the surfaces of the first topical element 22 to reflect the light from the light-emitting element 24. The material of the reflective layer can be the same as the aforementioned metal. The light from the light-emitting element 24 can be reflected by the first optical element 22 for improving the light extraction efficiency of the light-emitting device 2. The shape of the second optical element 28 includes but is not limited to triangle, semicircle, quarter circle, trapezoid, pentagon, or rectangle in the cross-sectional view. An encapsulant can be formed between the second optical element 28 and the light-emitting element 24 in another embodiment to improve the light extraction efficiency of the light-emitting device 2.
The light-emitting element 24 can be LED or Organic LED (OLED) and emit a first light with a first wavelength. The wavelength-converting layer 26 can receive the first light and generate a second light with a second wavelength, wherein the second wavelength is different from the first wavelength. The material of the wavelength-converting layer 26 can be phosphor such as yttrium aluminum garnet, silicate garnet, vanadate garnet, mixed oxides, alkaline earth metal silicates, alkaline earth metal sulfides, selenides, alkaline earth metal thiogallates, metal nitrides, metal oxo-nitrides and mixed molybdate-tungstate families, or mixed glass phosphors. The material of the wavelength-converting layer 26 can be semiconductor including more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se as well. The wavelength-converting layer 26 can be disposed on the light-emitting element 24 or be formed conformably around the contour thereof.
The bonding layer 21 can adhesively connect the first optical element 22 and/or the second optical element 28 with the second carrier 23. The material of the bonding layer 21 can be transparent material such as polyimide, BCB, PFCB, MgO, Sub, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, glass, Al₂O₃, SiO_x, TiO₂, SiN_x, SOG, and so on. The bonding layer 21 can be UV tape or foam as well.
The conductive structure 25 is for receiving external voltage. The materials of the conductive structure 25 can be transparent conductive material and/or metal material. The transparent conductive material includes but is not limited to ITO, InO, SnO, CTO, ATO, AZO, ZTO, ZnO, IZO, DLC, GZO, and so on. The metal material includes but is not limited to Cu, Al, In, Sn, Au, Pt, Zn, Ag, Ti, Ni, Pb, Pd, Ge, Ni, Cr, Cd, Co, Mn, Sb, Bi, Ga, W, Be, Ag—Ti, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb, Sn—Pb—Zn, Ni—Sn, Ni—Co, Ag—Cu, Ge—Au, Au alloy, and so on. The area of the bottom surface of the conductive structure 25 is larger than that of the light-emitting element 24. It can be at least 2 times area of the bottom surface of the light-emitting element 24. The conductive structure 25 can effectively release the heat from the light-emitting element 24 for improving the efficiency thereof. In addition, there is an insulating-diffusing layer (not shown) formed between the light-emitting element 24 and the conductive structure 25 in another embodiment. The insulating-diffusing layer can reflect and diffuse the light from the light-emitting element 24 to improve the light extraction efficiency of the light-emitting device 2. The material of the insulating-diffusing layer includes but is not limited to epoxy, SiO_x, Al₂O₃, TiO₂, silicone, resin, or the combination thereof. In another embodiment, a reflective layer can be formed between the light-emitting element 24 and the conductive structure 25 to reflect the light from the light-emitting element 24. The material of the reflective layer can be the same as the aforementioned metal. The light from the light-emitting element 24 can be reflected by the reflective layer for improving the light extraction efficiency of the light-emitting device 2.
FIG. 3 shows another embodiment that a light-emitting device 3 is similar to the light-emitting device 2. In addition, the light-emitting device 3 includes a second optical element 30 which has a top surface at the same elevation as that of the first optical element 22 in a cross-sectional view. The top surface of the second optical element 30 is flat so it benefits the bonding process and reinforcing the structure of the light-emitting device 2. FIG. 4 shows another embodiment that a light-emitting device 4 is similar to the light-emitting device 2. In addition, the light-emitting device 4 includes a second optical element 40 which has a top surface lower than that of the first optical element 22. Therefore, other optical elements can be formed easily on the second optical element 40 to tune the optical field for the application.
Referring to FIG. 5, a light-emitting device 5 is similar to the light-emitting device 2. In addition, the light-emitting device 5 includes an electronic component 50 such as rectifier, protection component, capacity, resistance, and so on. The electronic component 50 having various functions can control the current of the light-emitting element 24 based of the requirement of the application. It can be formed within the step of forming the light-emitting element 24 of the above manufacturing process. Preferably, the amount of the electronic component 50 and the light-emitting element 24 can be more than two, so the steps of the manufacturing process are reduced and the cost of the manufacturing is lowered. The electronic component 50 and the light-emitting element 24 can be electrically connected by the conductive structure 25. The light-emitting device 5 further includes a wavelength-converting layer 52 on the second optical element 28.
FIG. 6 illustrates a schematic diagram of a light-generating device 6. The light-generating device 6 includes the light-emitting device of anyone of the foregoing embodiments of the present application. The light-generating device 6 can be an illumination device such as a street light, a lamp of vehicle, or an illustration source for interior. The light-generating device 6 can be also a traffic sign or a backlight of a backlight module of an LCD. The light-generating device 6 includes a light source 61 adopting any foregoing light-emitting devices; a power supplying system 62 providing current to the light source 61; and a control element 63 controlling the power supplying system 62.
FIG. 7 illustrates a schematic diagram of a backlight module 7. A backlight module 7 includes the light-generating device 6 of the foregoing embodiment and an optical element 71. The optical element 71 can process the light generated by the light-generating device 6 for LCD application, such as scattering the light emitted from the light-generating device 6.
It will be apparent to those having ordinary skill in the art that various modifications and variations can be made to the devices in accordance with the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure covers modifications and variations of this disclosure provided they fall within the scope of the following claims and their equivalents.

Claims

What is claimed is:

1. A light-emitting device, comprising:

a first optical element comprises an opening;

a light-emitting element in the opening;

a second optical element on the light-emitting element;

an oxide layer between the light-emitting element and the second optical element; and

two separated conductive structures under the light-emitting element.

2. The light-emitting device of claim 1, wherein the oxide layer comprises a wavelength-converting material.

3. The light-emitting device of claim 1, wherein one of the separated conductive structures comprises a portion not covered by the light-emitting element.

4. The light-emitting device of claim 1, further comprising an insulating-diffusing layer between the light-emitting element and one of the two separated conductive structures.

5. The light-emitting device of claim 1, wherein the oxide layer is formed conformably around a contour of the light-emitting element.

6. The light-emitting device of claim 1, wherein the first optical element has an inclined surface.

7. The light-emitting device of claim 1, wherein the first optical element has a height larger than that of the light-emitting element.

8. The light-emitting device of claim 1, wherein the second optical element comprises a transparent material.

9. The light-emitting device of claim 1, further comprising an encapsulant formed between the light-emitting element and the second optical element.

10. A light-emitting device, comprising:

a light-emitting element;

a first optical element on the light-emitting element;

an oxide layer formed on the light-emitting element;

an encapsulant formed between the light-emitting element and the first optical element; and

two separated conductive structures under the light-emitting element and comprise a part not covered by the light-emitting element.

11. The light-emitting device of claim 10, further comprising a carrier on the first optical layer.

12. A light-emitting device, comprising:

a first optical element comprising an opening;

a light-emitting element formed in the opening;

a second optical element on the light-emitting element;

a carrier on the second optical element; [FIG. 2C]

a wavelength-converting layer formed on the light-emitting element; and