US20140290375A1 - Micromechanical structure having a deformable membrane and a protection against strong deformations - Google Patents
Micromechanical structure having a deformable membrane and a protection against strong deformations Download PDFInfo
- Publication number
- US20140290375A1 US20140290375A1 US14/354,113 US201214354113A US2014290375A1 US 20140290375 A1 US20140290375 A1 US 20140290375A1 US 201214354113 A US201214354113 A US 201214354113A US 2014290375 A1 US2014290375 A1 US 2014290375A1
- Authority
- US
- United States
- Prior art keywords
- membrane
- micromechanical structure
- islets
- structure according
- lower abutment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000012530 fluid Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000010339 dilation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0047—Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0097—Devices comprising flexible or deformable elements not provided for in groups B81B3/0002 - B81B3/0094
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0618—Overload protection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0048—Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Definitions
- the invention relates to a micromechanical structure intended to measure or detect a mechanical magnitude or a dynamic magnitude.
- a micromechanical structure for measuring a mechanical or dynamic magnitude such as pressure conventionally includes a deformable membrane and a support substrate, the membrane being suspended above the support substrate and defining a free space.
- Capacitive sensors or strain gauges supported by the membrane can measure the deformations undergone by the membrane subject to a contribution of external energy (such as for example pressure applied perpendicularly to the principal plane of the membrane), in observing the modifications of physical properties of the membrane associated to deformations (such as for example a change in electric capacity or internal stresses).
- external energy such as for example pressure applied perpendicularly to the principal plane of the membrane
- Modifications in energy made to the membrane or force exerted on the membrane can be measured for example in this way and therefore physical magnitudes in a certain medium can be monitored (these are magnitudes of dynamic type, that is, of acceleration type or deceleration type, and/or mechanical type).
- the invention overcomes at least one of the above disadvantages.
- the invention proposes a micromechanical structure for measuring or detecting a mechanical magnitude or a dynamic magnitude, including a deformable membrane and a support substrate, the membrane including a first part and a second part enclosed by the first part, the second part having a thickness less than the thickness of the first part, the membrane being suspended above the support substrate defining a free space, said micromechanical structure also including a lower abutment adapted to limit deformations of the membrane, said lower abutment being arranged above the support substrate and extending in the free space from said support substrate towards the membrane, characterized in that the lower abutment includes islets extending into the free space towards the membrane from a flat surface of the lower abutment, the islets forming a relief structure such that in case of contact between the islets and the fine part of the membrane, the contact surface between the islets and the fine part of the membrane is slight relative to the dimensions of the fine part of the membrane.
- the invention proposes a differential pressure sensor including a micromechanical structure according to the initial aspect of the invention.
- the invention has many advantages.
- the lower abutment protects the membrane from overpressure.
- the resistance of the micromechanical structure is increased without modifying either the structure or the geometry of the suspended membrane. Also, it modifies neither the structure nor the definition of the measuring elements mounted on the membrane and does not encumber the exposed part of the membrane.
- the islets minimise stresses due to thermal dilation of oil or another fluid (liquid or gaseous) present in the space between the membrane and the abutment. These islets also allow good circulation of fluid and improve filling of the structure in the case of use as a differential pressure sensor. This is very important in the case of viscous fluid, the islets avoiding the appearance of air bubbles in the fluid, and reducing errors which might be due to poor circulation of fluid, once the structure is filled with said fluid, in the case of use as a differential pressure sensor for example.
- the micromechanical structure therefore attains resistance to external stresses without the need to modify the suspended membrane, this micromechanical structure capable of functioning with standard membranes, for example.
- FIG. 1 illustrates a micromechanical structure according to an embodiment of the invention
- FIG. 2 illustrates a micromechanical structure according to an embodiment of the invention
- FIG. 3 illustrates a bottom plan view of the micromechanical structure of the invention
- FIG. 4 illustrates a pressure differential sensor including a micromechanical structure according to the invention
- FIG. 5 illustrates a detailed view of part of the micromechanical structure of the invention
- FIGS. 6 a and 6 b illustrate two views of the lower abutment of the micromechanical structure of the invention.
- a micromechanical structure intended to measure or detect a mechanical magnitude or a dynamic magnitude such as pressure includes a deformable membrane 20 and a support substrate 10 .
- the membrane is arranged above the support substrate 10 to define a free space 30 .
- This free space 30 is intended to be filled by fluid in the case of a micromechanical structure for differential measuring of pressure.
- pressure P1 comes from above the structure and pressure P2 comes from below the structure (see FIGS. 1 , 2 and 4 ).
- the membrane 20 is intended to support pressure-measurement elements 22 , 23 a, 23 b, 24 a, 24 b, 25 a, 25 b , 26 a, 26 b.
- the free space 30 is generally formed by micro-machining in an initial substrate.
- the techniques of micro-machining to form such a free space can for example be chemical etching such as KOH etching at a determined temperature.
- the membrane is constituted by two distinct parts: a first part 20 a which has a thickness greater than a second part 20 b fine which serves as active element.
- the second part 20 b is enclosed by the first part 20 a.
- the part 20 a is that in contact with the support substrate 10 , whereas the fine part 20 b is suspended above the free space 30 .
- the second part 20 b of the membrane 20 has a thickness less than the thickness of the first part 20 a of the membrane.
- the thickness of the part 20 b fine is typically of between 20 and 100 m, the value being defined according to the range of the mechanical or dynamic magnitude to be measured.
- the membrane 20 especially its fine part 20 b, can deform under the effect of pressure P1 applied to the latter.
- the support substrate 10 can be made of material based on glass, silicon quartz, Pyrex(TM), sapphire, alumina, Si, SiC.
- the thickness of the support substrate 10 is typically between 500 ⁇ m and 2000 ⁇ m.
- the membrane 20 is connected to the support substrate 10 by anodic sealing or by means of a molecular or atomic bond with or without intermediate layer, or by sintering or by brazing.
- the membrane 20 is typically formed from a substrate for example including monocrystalline silicon such as SOI “Silicon On Insulator”) and PSOI “Poly Silicon On Insulator”, sapphire such as SOS “Silicon On Sapphire”, or another material such as SiCOI “SiC on Insulator” or SiC.
- monocrystalline silicon such as SOI “Silicon On Insulator”) and PSOI “Poly Silicon On Insulator”, sapphire such as SOS “Silicon On Sapphire”, or another material such as SiCOI “SiC on Insulator” or SiC.
- the membrane 20 includes an electrically insulating layer 22 such as a SiO 2 layer in the case of a membrane 20 made of SOI or PSOI, deposited on its external surface opposite the free space 30 .
- an electrically insulating layer 22 such as a SiO 2 layer in the case of a membrane 20 made of SOI or PSOI, deposited on its external surface opposite the free space 30 .
- Different materials such as nitrides, oxides, metal layers, mono- and polycrystalline silicon are placed onto this insulating layer 22 so as to form the microstructures 23 a, 23 b, 24 a, 24 b, 25 a, 25 b, 26 a, 26 b.
- the micro-structures can form strain gauges and serve as elements for measuring the physical magnitude for measuring pressure, for example.
- electric contact zones 25 a , 25 b are also arranged on the membrane 20 .
- These electric contact zones 25 a, 25 b include aluminum, gold, platinum, titanium and tungsten, for example.
- the micromechanical structure includes a lower abutment 21 limiting deformation of the membrane 20 .
- the lower abutment 21 is arranged above the support substrate 10 and extends into the free space 30 from the support substrate 10 towards the membrane 20 .
- the lower abutment 21 preferably includes material identical to that of the membrane 20 or made of alloys, sapphire, alumina, ceramic, quartz or glass. It can also include material identical to that of the support substrate 10 .
- the lower abutment 21 has a general trapezoid shape, the large base being arranged on the substrate 10 support and the small base arranged directly below the membrane 20 in particular under its fine part 20 b , this small base defining a flat surface of the lower abutment 21 .
- the latter includes (see FIGS. 5 and 6 a and 6 b ), on a flat surface, defined especially by the small base of the lower abutment, islets 101 , 102 , 103 , 104 , 105 , 106 , 107 , 108 which extend from a flat surface of the lower abutment 21 , the flat surface corresponding to the base of the islets.
- the islets 101 - 108 form a relief structure such that in case of contact between the islets 101 - 108 and the fine part 20 b of the membrane 20 , the contact surface between the islets 101 - 108 and the fine part 20 b of the membrane 20 is slight relative to the dimensions of the fine part 20 b of the membrane 20 .
- the islets 101 - 108 advantageously include inclined facets which are oriented according to acute angles greater than zero degrees relative to the flat surface of the lower abutment. They are especially in the form of a mesa.
- the resulting islets enable optimal circulation of fluid in the space between the membrane 20 and the lower abutment 21 .
- the islets also minimise errors due to the variation in density of fluid (in case of variation in temperatures during use of the micromechanical structure, for example from ⁇ 50° C. to 180° C.) in the space located between the lower abutment 21 and the membrane 20 .
- the islets have a height of preferably between 10 ⁇ m and 50 ⁇ m, and a width at the base of between 20 ⁇ m and 200 ⁇ m.
- the islets are dimensioned so that the fine part of the membrane and the islets are spaced by a distance of between 5 and 30 ⁇ m, preferably 10 ⁇ m.
- the islets are for example obtained by a micro-machining process including steps of photolithography and etching applied to the upper face of the lower abutment 21 .
- the type of etching applied defines the form of the islets (mesa form for humid anisotropic etching of KOH etching type, TMAH form with vertical walls for dry etching of type RIE “Reactive Ion Etching”).
- the lower abutment including the islets is obtained from a substrate made of silicon in which the islets and the recess (see below) are formed by etching.
- the pre-formation zones of the islets are protected by a mask preferably made of SiO 2 +Si 3 N 4 , a second mask SiO 2 +Si 3 N 4 being made after the bond of the lower abutment 21 to the support substrate 10 , the bond being preferably made by anodic sealing, the support substrate 10 being made of glass.
- the value of this distance can be selected as a function of the parameters of resistance to deformation of the membrane 20 (dependent especially on its thickness and the material including it) with a threshold distance from which the membrane risks deteriorating.
- the support substrate 10 therefore includes a traversing recess 40 which extends according to a recess 40 ′ in the lower abutment 21 .
- the recesses 40 , 40 ′ of the support substrate 10 and of the lower abutment 21 are preferably circular.
- the recess 40 ′ of the abutment can be of a diameter identical to or less than the diameter of the recess of the support substrate 10 .
- a recess is preferred in the form of a cone such as the large diameter of the cone or of the side of the support substrate 10 and reduces while the recess progresses in thickness from the lower abutment 21 .
- micromechanical structure enables absolute measuring of pressure.
- the recess 40 has a geometric form for access of pressure via the support substrate 10 .
- the recess 40 can take the form of a simple cylinder of a diameter generally between 500 ⁇ m and 1500 ⁇ m, or a more complex form such as for example a double cylinder the diameter of the upper part of which will be less than that of the simple cylinder.
- the recesses 40 , 40 ′ of the support substrate 10 and of the lower abutment 21 allow passage of fluids (gas or liquids) and are therefore necessary in the case of a differential or relative sensor to allow transfer of the pressure P2 to the lower part of the membrane 20 .
- the recesses 40 , 40 ′ in the support substrate 10 of the lower abutment 21 are made by etching by means of an alkaline solution for anisotropic etching (KOH, TMAH, . . . ), preferably conducted in two steps: a first pre-etching step, then final etching after the bond of the lower abutment 21 on the support substrate 10 , the bond preferably being made by anodic sealing, the support substrate 10 being made of glass. It is noted that the zones to be spared by etching are protected by a 3D photolithography process of known type based on thick resin (thickness of between 10 ⁇ m and 50 ⁇ m).
- the latter also includes an upper abutment 60 arranged above the membrane 20 (see FIGS. 2 and 4 ).
- the function of the upper abutment 60 is to mechanically protect the membrane 20 in the event where overpressure comes from below the structure (pressure P2 in FIGS. 2 and 4 ).
- the upper abutment 60 also has one or more recesses 70 (typically four) at its centre and is connected to the rest of the structure via anodic sealing or by means of a molecular or covalent bond with or without intermediate layer, or by sintering or by brazing.
- the recesses 70 are pierced in the upper abutment 60 to reduce the effects of capillarity and dilation in temperature after filling by fluid, as well as to make for easier transmission of the pressure P1.
- Recesses are made at the four corners of the upper abutment 60 to enable the connection to a mechanical housing.
- the structure described hereinabove is intended to be placed in a housing B and will be immersed in fluid (hatched zones in FIG. 4 ).
- the upper abutment 60 is preferably obtained from a substrate of pierced borosilicate glass.
- the upper abutment 60 has overetching zones at the level of the metal tracks and at the four corners of the upper abutment to allow the electrical connection and to make filling by fluid easier. Also, as previously, the zones spared by overetching are protected by a 3D photolithography process of known type based on thick resin.
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- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
Description
- The invention relates to a micromechanical structure intended to measure or detect a mechanical magnitude or a dynamic magnitude.
- And it relates more particularly to a micromechanical structure for absolute, relative or differential measuring of a pressure.
- A micromechanical structure for measuring a mechanical or dynamic magnitude such as pressure conventionally includes a deformable membrane and a support substrate, the membrane being suspended above the support substrate and defining a free space.
- Uses of these suspended membranes are known.
- Capacitive sensors or strain gauges supported by the membrane can measure the deformations undergone by the membrane subject to a contribution of external energy (such as for example pressure applied perpendicularly to the principal plane of the membrane), in observing the modifications of physical properties of the membrane associated to deformations (such as for example a change in electric capacity or internal stresses).
- Modifications in energy made to the membrane or force exerted on the membrane can be measured for example in this way and therefore physical magnitudes in a certain medium can be monitored (these are magnitudes of dynamic type, that is, of acceleration type or deceleration type, and/or mechanical type).
- Such membranes subjected to strong energies can become fragile, their intrinsic properties can be altered, and their structure can crack or even break.
- The invention overcomes at least one of the above disadvantages.
- To this end the invention proposes a micromechanical structure for measuring or detecting a mechanical magnitude or a dynamic magnitude, including a deformable membrane and a support substrate, the membrane including a first part and a second part enclosed by the first part, the second part having a thickness less than the thickness of the first part, the membrane being suspended above the support substrate defining a free space, said micromechanical structure also including a lower abutment adapted to limit deformations of the membrane, said lower abutment being arranged above the support substrate and extending in the free space from said support substrate towards the membrane, characterized in that the lower abutment includes islets extending into the free space towards the membrane from a flat surface of the lower abutment, the islets forming a relief structure such that in case of contact between the islets and the fine part of the membrane, the contact surface between the islets and the fine part of the membrane is slight relative to the dimensions of the fine part of the membrane.
- The invention is advantageously completed by the following characteristics, taken alone or in any technically possible combination:
-
- the islets include inclined facets which are oriented according to acute angles greater than zero degrees relative to the flat surface of the lower abutment;
- the islets are in the form of a mesa;
- the support substrate also have a central traversing recess;
- the lower abutment includes a central traversing recess in the form of a cone;
- it also includes an upper abutment arranged above the membrane;
- the upper abutment includes recesses distributed around its centre;
- the support base and the lower abutment are respectively formed from two materials different to each other;
- the support substrate is made of glass and in which the lower abutment and said support substrate made of glass are connected by anodic sealing or by means of a molecular or covalent bond with or without intermediate layer, or by sintering or by brazing;
- the support base and the lower abutment are formed from one and the same material;
- the support base and the abutments are each made of material selected from the following materials: alloys; glass; quartz; alumina; ceramic; Si; SiC; sapphire;
- the fine part of the membrane has a thickness of between 20 μm and 100 μm;
- the islets have a height of between 10 μm and 50 μm and a maximal width of between 20 μm and 200 μm.
- In addition, the invention proposes a differential pressure sensor including a micromechanical structure according to the initial aspect of the invention.
- The invention has many advantages.
- The lower abutment protects the membrane from overpressure.
- The fact of providing an abutment as an independent element for resistance to overpressure adds the latter to all existing micromechanical structures, without any dimensional change to the deformable membrane and without any modification of the mechanical or thermal behaviour of the structure.
- In this way, the resistance of the micromechanical structure is increased without modifying either the structure or the geometry of the suspended membrane. Also, it modifies neither the structure nor the definition of the measuring elements mounted on the membrane and does not encumber the exposed part of the membrane.
- Also, the islets minimise stresses due to thermal dilation of oil or another fluid (liquid or gaseous) present in the space between the membrane and the abutment. These islets also allow good circulation of fluid and improve filling of the structure in the case of use as a differential pressure sensor. This is very important in the case of viscous fluid, the islets avoiding the appearance of air bubbles in the fluid, and reducing errors which might be due to poor circulation of fluid, once the structure is filled with said fluid, in the case of use as a differential pressure sensor for example.
- The micromechanical structure therefore attains resistance to external stresses without the need to modify the suspended membrane, this micromechanical structure capable of functioning with standard membranes, for example.
- Other characteristics and advantages of the invention will emerge from the following description which is purely illustrative and non-limiting and must be considered with respect to the attached drawings, in which:
-
FIG. 1 illustrates a micromechanical structure according to an embodiment of the invention; -
FIG. 2 illustrates a micromechanical structure according to an embodiment of the invention; -
FIG. 3 illustrates a bottom plan view of the micromechanical structure of the invention; -
FIG. 4 illustrates a pressure differential sensor including a micromechanical structure according to the invention; -
FIG. 5 illustrates a detailed view of part of the micromechanical structure of the invention; -
FIGS. 6 a and 6 b illustrate two views of the lower abutment of the micromechanical structure of the invention. - In all figures, similar elements bear identical reference numerals.
- A micromechanical structure intended to measure or detect a mechanical magnitude or a dynamic magnitude such as pressure includes a
deformable membrane 20 and asupport substrate 10. - As is evident in
FIGS. 1 , 2 and 4, the membrane is arranged above thesupport substrate 10 to define afree space 30. Thisfree space 30 is intended to be filled by fluid in the case of a micromechanical structure for differential measuring of pressure. In this case, pressure P1 comes from above the structure and pressure P2 comes from below the structure (seeFIGS. 1 , 2 and 4). - The
membrane 20 is intended to support pressure- 22, 23 a, 23 b, 24 a, 24 b, 25 a, 25 b, 26 a, 26 b.measurement elements - The
free space 30 is generally formed by micro-machining in an initial substrate. The techniques of micro-machining to form such a free space can for example be chemical etching such as KOH etching at a determined temperature. - Similarly, the membrane is constituted by two distinct parts: a
first part 20 a which has a thickness greater than asecond part 20 b fine which serves as active element. Thesecond part 20 b is enclosed by thefirst part 20 a. Thepart 20 a is that in contact with thesupport substrate 10, whereas thefine part 20 b is suspended above thefree space 30. - The
second part 20 b of themembrane 20 has a thickness less than the thickness of thefirst part 20 a of the membrane. - The thickness of the
part 20 b fine is typically of between 20 and 100 m, the value being defined according to the range of the mechanical or dynamic magnitude to be measured. - In this way, the
membrane 20, especially itsfine part 20 b, can deform under the effect of pressure P1 applied to the latter. - The
support substrate 10 can be made of material based on glass, silicon quartz, Pyrex(™), sapphire, alumina, Si, SiC. - The thickness of the
support substrate 10 is typically between 500 μm and 2000 μm. - The
membrane 20 is connected to thesupport substrate 10 by anodic sealing or by means of a molecular or atomic bond with or without intermediate layer, or by sintering or by brazing. - The
membrane 20 is typically formed from a substrate for example including monocrystalline silicon such as SOI “Silicon On Insulator”) and PSOI “Poly Silicon On Insulator”, sapphire such as SOS “Silicon On Sapphire”, or another material such as SiCOI “SiC on Insulator” or SiC. - The
membrane 20 includes an electrically insulatinglayer 22 such as a SiO2 layer in the case of amembrane 20 made of SOI or PSOI, deposited on its external surface opposite thefree space 30. Different materials such as nitrides, oxides, metal layers, mono- and polycrystalline silicon are placed onto thisinsulating layer 22 so as to form the 23 a, 23 b, 24 a, 24 b, 25 a, 25 b, 26 a, 26 b. The micro-structures can form strain gauges and serve as elements for measuring the physical magnitude for measuring pressure, for example.microstructures - To ensure connections,
25 a, 25 b are also arranged on theelectric contact zones membrane 20. These 25 a, 25 b include aluminum, gold, platinum, titanium and tungsten, for example.electric contact zones - To protect the
membrane 20 from deformation, in case of overpressure coming from the top of the structure, the micromechanical structure includes alower abutment 21 limiting deformation of themembrane 20. Thelower abutment 21 is arranged above thesupport substrate 10 and extends into thefree space 30 from thesupport substrate 10 towards themembrane 20. - The
lower abutment 21 preferably includes material identical to that of themembrane 20 or made of alloys, sapphire, alumina, ceramic, quartz or glass. It can also include material identical to that of thesupport substrate 10. - The
lower abutment 21 has a general trapezoid shape, the large base being arranged on thesubstrate 10 support and the small base arranged directly below themembrane 20 in particular under itsfine part 20 b, this small base defining a flat surface of thelower abutment 21. - To boost the efficacy of the
lower abutment 21 the latter includes (seeFIGS. 5 and 6 a and 6 b), on a flat surface, defined especially by the small base of the lower abutment, 101, 102, 103, 104, 105, 106, 107, 108 which extend from a flat surface of theislets lower abutment 21, the flat surface corresponding to the base of the islets. - The islets 101-108 form a relief structure such that in case of contact between the islets 101-108 and the
fine part 20 b of themembrane 20, the contact surface between the islets 101-108 and thefine part 20 b of themembrane 20 is slight relative to the dimensions of thefine part 20 b of themembrane 20. - The islets 101-108 advantageously include inclined facets which are oriented according to acute angles greater than zero degrees relative to the flat surface of the lower abutment. They are especially in the form of a mesa.
- The resulting islets enable optimal circulation of fluid in the space between the
membrane 20 and thelower abutment 21. - Another advantage is that the islets also minimise errors due to the variation in density of fluid (in case of variation in temperatures during use of the micromechanical structure, for example from −50° C. to 180° C.) in the space located between the
lower abutment 21 and themembrane 20. - The islets have a height of preferably between 10 μm and 50 μm, and a width at the base of between 20 μm and 200 μm.
- Also, the islets are dimensioned so that the fine part of the membrane and the islets are spaced by a distance of between 5 and 30 μm, preferably 10 μm.
- The islets are for example obtained by a micro-machining process including steps of photolithography and etching applied to the upper face of the
lower abutment 21. The type of etching applied defines the form of the islets (mesa form for humid anisotropic etching of KOH etching type, TMAH form with vertical walls for dry etching of type RIE “Reactive Ion Etching”). - Preferably, the lower abutment including the islets is obtained from a substrate made of silicon in which the islets and the recess (see below) are formed by etching. The pre-formation zones of the islets are protected by a mask preferably made of SiO2+Si3N4, a second mask SiO2+Si3N4 being made after the bond of the
lower abutment 21 to thesupport substrate 10, the bond being preferably made by anodic sealing, thesupport substrate 10 being made of glass. - As mentioned hereinabove, there is a distance between the
lower abutment 21 and themembrane 20. This distance represents the maximal deformation distance of themembrane 20. In this way, greater deformation than this distance supports themembrane 20 against theabutment 21, which prevents overdeformation linked to overpressure. This is in particular against the islets which themembrane 20 supports in the case of overpressure P1 coming from the top of the structure. - By way of advantage, the value of this distance can be selected as a function of the parameters of resistance to deformation of the membrane 20 (dependent especially on its thickness and the material including it) with a threshold distance from which the membrane risks deteriorating.
- This is how it is possible to adjust the parameters of the
lower abutment 21 as a function of the planned application. - For differential measuring of pressure, the
support substrate 10 therefore includes a traversingrecess 40 which extends according to arecess 40′ in thelower abutment 21. The 40, 40′ of therecesses support substrate 10 and of thelower abutment 21 are preferably circular. - The
recess 40′ of the abutment can be of a diameter identical to or less than the diameter of the recess of thesupport substrate 10. However a recess is preferred in the form of a cone such as the large diameter of the cone or of the side of thesupport substrate 10 and reduces while the recess progresses in thickness from thelower abutment 21. - It is noted that without
recess 40, the micromechanical structure enables absolute measuring of pressure. - The
recess 40 has a geometric form for access of pressure via thesupport substrate 10. Therecess 40 can take the form of a simple cylinder of a diameter generally between 500 μm and 1500 μm, or a more complex form such as for example a double cylinder the diameter of the upper part of which will be less than that of the simple cylinder. - The
40, 40′ of therecesses support substrate 10 and of thelower abutment 21 allow passage of fluids (gas or liquids) and are therefore necessary in the case of a differential or relative sensor to allow transfer of the pressure P2 to the lower part of themembrane 20. - The
40, 40′ in therecesses support substrate 10 of thelower abutment 21 are made by etching by means of an alkaline solution for anisotropic etching (KOH, TMAH, . . . ), preferably conducted in two steps: a first pre-etching step, then final etching after the bond of thelower abutment 21 on thesupport substrate 10, the bond preferably being made by anodic sealing, thesupport substrate 10 being made of glass. It is noted that the zones to be spared by etching are protected by a 3D photolithography process of known type based on thick resin (thickness of between 10 μm and 50 μm). - To improve the resistance of the micromechanical structure for differential measuring of the pressure, the latter also includes an
upper abutment 60 arranged above the membrane 20 (seeFIGS. 2 and 4 ). - The function of the
upper abutment 60 is to mechanically protect themembrane 20 in the event where overpressure comes from below the structure (pressure P2 inFIGS. 2 and 4 ). - The
upper abutment 60 also has one or more recesses 70 (typically four) at its centre and is connected to the rest of the structure via anodic sealing or by means of a molecular or covalent bond with or without intermediate layer, or by sintering or by brazing. - The
recesses 70 are pierced in theupper abutment 60 to reduce the effects of capillarity and dilation in temperature after filling by fluid, as well as to make for easier transmission of the pressure P1. Recesses are made at the four corners of theupper abutment 60 to enable the connection to a mechanical housing. - In fact, as illustrated in
FIG. 4 , the structure described hereinabove is intended to be placed in a housing B and will be immersed in fluid (hatched zones inFIG. 4 ). - The
upper abutment 60 is preferably obtained from a substrate of pierced borosilicate glass. - The
upper abutment 60 has overetching zones at the level of the metal tracks and at the four corners of the upper abutment to allow the electrical connection and to make filling by fluid easier. Also, as previously, the zones spared by overetching are protected by a 3D photolithography process of known type based on thick resin.
Claims (15)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1159726 | 2011-10-26 | ||
| FR1159726A FR2982023B1 (en) | 2011-10-26 | 2011-10-26 | MICROMECHANICAL STRUCTURE WITH DEFORMABLE MEMBRANE AND PROTECTION AGAINST STRONG DEFORMATIONS |
| PCT/EP2012/071000 WO2013060697A1 (en) | 2011-10-26 | 2012-10-24 | Micromechanical structure having a deformable membrane and a protection against strong deformations |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20140290375A1 true US20140290375A1 (en) | 2014-10-02 |
| US9470592B2 US9470592B2 (en) | 2016-10-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| US14/354,113 Active 2033-05-31 US9470592B2 (en) | 2011-10-26 | 2012-10-24 | Micromechanical structure having a deformable membrane and a protection against strong deformations |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9470592B2 (en) |
| EP (1) | EP2771661B1 (en) |
| JP (1) | JP6022587B2 (en) |
| CN (1) | CN104024816B (en) |
| BR (1) | BR112014009888B1 (en) |
| CA (1) | CA2852847C (en) |
| ES (1) | ES2725557T3 (en) |
| FR (1) | FR2982023B1 (en) |
| WO (1) | WO2013060697A1 (en) |
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|---|---|---|---|---|
| EP3093880A1 (en) * | 2015-04-06 | 2016-11-16 | Honeywell International Inc. | Silicon-on-sapphire device with minimal thermal strain preload and enhanced stability at high temperature |
| EP3249371A1 (en) * | 2016-05-25 | 2017-11-29 | Honeywell International Inc. | Differential pressure sensor full overpressure protection device |
| US9963340B2 (en) | 2015-12-03 | 2018-05-08 | Honeywell International Inc. | Pressure sensor die over pressure protection for high over pressure to operating span ratios |
| US20200115219A1 (en) * | 2016-09-07 | 2020-04-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Silicon Carbide Microelectromechanical Structure, Device, and Method |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3007134B1 (en) * | 2013-06-17 | 2018-11-16 | Auxitrol S.A. | PRESSURE MEASURING SYSTEM DISCRIMINATING FAILURE OF A PRESSURE OR DEPRESSION |
| US8921957B1 (en) * | 2013-10-11 | 2014-12-30 | Robert Bosch Gmbh | Method of improving MEMS microphone mechanical stability |
| US9410861B2 (en) * | 2014-03-25 | 2016-08-09 | Honeywell International Inc. | Pressure sensor with overpressure protection |
| US9369804B2 (en) * | 2014-07-28 | 2016-06-14 | Robert Bosch Gmbh | MEMS membrane overtravel stop |
| DE102017213354A1 (en) * | 2017-08-02 | 2019-02-07 | Robert Bosch Gmbh | Micromechanical pressure sensor device and corresponding manufacturing method |
| DE102018222730A1 (en) * | 2018-12-21 | 2020-06-25 | Robert Bosch Gmbh | Micromechanical component and manufacturing method for a micromechanical component |
| DE102019205349A1 (en) * | 2019-04-12 | 2020-10-15 | Robert Bosch Gmbh | Micromechanical component for a capacitive sensor or switch device |
| US12467802B2 (en) * | 2022-10-18 | 2025-11-11 | Te Connectivity Solutions Gmbh | Membrane of a sensor with multiple deflectable sections for different ranges of a sensed force or pressure |
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| EP0339981A3 (en) * | 1988-04-29 | 1991-10-09 | Schlumberger Industries, Inc. | Laminated semiconductor sensor with overpressure protection |
| US4949581A (en) * | 1989-06-15 | 1990-08-21 | Rosemount Inc. | Extended measurement capability transmitter having shared overpressure protection means |
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| US6642594B2 (en) * | 2001-12-06 | 2003-11-04 | Kulite Semiconductor Products, Inc. | Single chip multiple range pressure transducer device |
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2011
- 2011-10-26 FR FR1159726A patent/FR2982023B1/en active Active
-
2012
- 2012-10-24 CA CA2852847A patent/CA2852847C/en active Active
- 2012-10-24 WO PCT/EP2012/071000 patent/WO2013060697A1/en not_active Ceased
- 2012-10-24 ES ES12778331T patent/ES2725557T3/en active Active
- 2012-10-24 US US14/354,113 patent/US9470592B2/en active Active
- 2012-10-24 JP JP2014537585A patent/JP6022587B2/en active Active
- 2012-10-24 CN CN201280052198.7A patent/CN104024816B/en active Active
- 2012-10-24 EP EP12778331.4A patent/EP2771661B1/en active Active
- 2012-10-24 BR BR112014009888-3A patent/BR112014009888B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130087864A1 (en) * | 2010-01-11 | 2013-04-11 | Elmos Semiconductor Ag | Semiconductor component |
| US20150033878A1 (en) * | 2012-03-06 | 2015-02-05 | Centre National De La Recherche Scientifique Laboratoire D'analyse Et D'archit | Method for producing a pressure sensor and corresponding sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3093880A1 (en) * | 2015-04-06 | 2016-11-16 | Honeywell International Inc. | Silicon-on-sapphire device with minimal thermal strain preload and enhanced stability at high temperature |
| US9890033B2 (en) | 2015-04-06 | 2018-02-13 | Honeywell International Inc. | Silicon-on-sapphire device with minimal thermal strain preload and enhanced stability at high temperature |
| US9963340B2 (en) | 2015-12-03 | 2018-05-08 | Honeywell International Inc. | Pressure sensor die over pressure protection for high over pressure to operating span ratios |
| EP3249371A1 (en) * | 2016-05-25 | 2017-11-29 | Honeywell International Inc. | Differential pressure sensor full overpressure protection device |
| US10197462B2 (en) | 2016-05-25 | 2019-02-05 | Honeywell International Inc. | Differential pressure sensor full overpressure protection device |
| US20200115219A1 (en) * | 2016-09-07 | 2020-04-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Silicon Carbide Microelectromechanical Structure, Device, and Method |
| US10717642B2 (en) * | 2016-09-07 | 2020-07-21 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Silicon carbide microelectromechanical structure, device, and method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2771661B1 (en) | 2019-02-20 |
| WO2013060697A1 (en) | 2013-05-02 |
| CN104024816A (en) | 2014-09-03 |
| CN104024816B (en) | 2016-03-09 |
| JP6022587B2 (en) | 2016-11-09 |
| BR112014009888B1 (en) | 2020-10-27 |
| US9470592B2 (en) | 2016-10-18 |
| FR2982023A1 (en) | 2013-05-03 |
| BR112014009888A2 (en) | 2017-04-25 |
| JP2014531034A (en) | 2014-11-20 |
| EP2771661A1 (en) | 2014-09-03 |
| CA2852847C (en) | 2020-09-15 |
| FR2982023B1 (en) | 2015-03-06 |
| ES2725557T3 (en) | 2019-09-24 |
| CA2852847A1 (en) | 2013-05-02 |
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