US20130119282A1 - Wafer level packaging, optical detection sensor and method of forming same - Google Patents
Wafer level packaging, optical detection sensor and method of forming same Download PDFInfo
- Publication number
- US20130119282A1 US20130119282A1 US13/670,766 US201213670766A US2013119282A1 US 20130119282 A1 US20130119282 A1 US 20130119282A1 US 201213670766 A US201213670766 A US 201213670766A US 2013119282 A1 US2013119282 A1 US 2013119282A1
- Authority
- US
- United States
- Prior art keywords
- optical detection
- electromagnetic radiation
- region
- sensor
- transmissive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
-
- H01L31/0232—
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
-
- H01L31/18—
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
- H03K17/9627—Optical touch switches
- H03K17/9631—Optical touch switches using a light source as part of the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
- H03K17/9627—Optical touch switches
- H03K17/9638—Optical touch switches using a light guide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H10W90/00—
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
- H03K2217/96—Touch switches
- H03K2217/96015—Constructional details for touch switches
- H03K2217/96023—Details of electro-mechanic connections between different elements, e.g.: sensing plate and integrated circuit containing electronics
-
- H10W70/09—
-
- H10W70/60—
-
- H10W72/9413—
-
- H10W74/019—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/1064—Partial cutting [e.g., grooving or incising]
Definitions
- the techniques described herein relate to an optical detection sensor, a wafer level package and a technique for forming the same.
- a proximity detector is an optical detection sensor that is capable of detecting the presence of a nearby object.
- An optical detection sensor may emit a beam of electromagnetic radiation (e.g., infrared radiation) and detect a reflected beam from a target object.
- electromagnetic radiation e.g., infrared radiation
- the optical detection apparatus includes a device configured to emit electromagnetic radiation, a structure including a first region of transmissive material to allow a first portion of the electromagnetic radiation to pass through the first region to an exterior of the optical detection apparatus.
- the structure is configured to reflect a second portion of the electromagnetic radiation.
- the optical detection apparatus also includes a sensor configured to detect the second portion of the electromagnetic radiation.
- Some embodiments relate to a method of forming at least a selectively transmissive structure.
- the method includes forming a first region of transmissive material, forming a second region of transmissive material.
- the second region of transmissive material having a shape different from that of the first region of transmissive material.
- the method also includes contacting the first and second regions of transmissive material to an adhesive, and encapsulating the first and second regions of transmissive material.
- Some embodiments relate to a method of forming at least an optical system.
- the method includes contacting a device for emitting electromagnetic radiation and a sensor chip to an adhesive material, the sensor chip having a plurality of optical sensors, and encapsulating the device for emitting electromagnetic radiation and the sensor chip.
- FIGS. 1A and 1B show cross sections of optical detection sensors, according to some embodiments.
- FIG. 2 shows a bottom view of an optical detection sensor.
- FIG. 3 schematically shows a top view of an optical system of the optical detection sensor.
- FIG. 4 shows an example of a glass panel from which transmissive glass regions may be formed.
- FIG. 5 shows a cross section of the glass panel having trenches formed therein.
- FIGS. 6A-6D show a process of forming a selectively transmissive structure, according to some embodiments.
- FIG. 7A-7G show a process of forming an optical system of an optical detection sensor, according to some embodiments.
- the optical system may be formed on the wafer level, e.g., with a 200 mm or 300 mm wafer size.
- FIGS. 8A-8B show a step of applying a bonding material to the optical system, according to some embodiments.
- FIG. 9 shows a step of bonding the optical system to the selectively transmissive structure, according to some embodiments.
- FIG. 10 shows a step of forming solder ball(s) on metal plugs on the bottom of the optical detection sensor, according to some embodiments.
- FIG. 11 shows a step of separating a plurality of optical detection sensors formed in the same structure, according to some embodiments.
- FIG. 1A shows a cross-section of an optical detection sensor 1 that may include an optical system 100 bonded to a selectively transmissive structure 300 using a bonding material 200 , according to some embodiments.
- the optical system 100 may include a device 101 configured to emit an electromagnetic signal and a detection sensor chip 102 that includes a first sensor 311 for detecting an electromagnetic signal and a second sensor 312 for detecting an electromagnetic signal.
- Sensor chip 102 may include electronics such as amplification circuitry and/or circuitry for determining whether an object has been detected.
- Device 101 may include a laser or other device for emitting electromagnetic radiation.
- the optical system 100 may also include one or more metal plugs 103 , a metal interconnect 107 contacting the metal plug(s) 103 , and a passivation layer 108 .
- the metal plugs 103 and metal interconnect 107 may be electrically coupled to the sensor chip 102 .
- At least a portion of the optical system 100 may be embedded in an encapsulant material 104 , which may be a polymer material such as epoxy.
- the selectively transmissive structure 300 may include regions 301 , 302 of transmissive material embedded in an encapsulant material 303 , which may be a polymer material such as epoxy.
- encapsulant material 303 may be formed of the same material as that of encapsulant material 104 .
- Regions 301 and 302 of transmissive material may be formed of glass, or any other suitable transmissive material.
- regions 301 and 302 may be formed of a material capable of allowing electromagnetic radiation having a wavelength of the electromagnetic radiation emitted by device 101 to pass therethrough.
- the encapsulant material 303 may be opaque to electromagnetic radiation having the wavelength of the electromagnetic radiation emitted by device 101 .
- regions 301 and 302 may operate as windows enabling electromagnetic radiation to selectively pass through structure 300 .
- selectively transmissive structure 300 and optical device 100 may be formed on a 200 mm or 300 mm diameter wafer with multiple devices according to the same pattern.
- a bonding material 200 may be disposed between the optical system 100 and the selectively transmissive structure 300 to bond the optical system 100 to the selectively transmissive structure 300 .
- Any suitable bonding material 200 may be used, such as a double sided glue, for example.
- an opaque region 202 may be disposed between the optical system 100 and structure 300 in a region between the sensors 311 and 312 . Opaque region 202 may prevent the direct passage of light between the device 101 and cavity 201 , thereby preventing direct passage of light from device 101 to sensor 312 .
- optical detection sensor 1 may detect a nearby object by transmitting, through transmissive region 302 , the electromagnetic radiation produced by device 101 . If a nearby object is present, the transmitted electromagnetic radiation may be reflected by the object and then pass back into the interior of the optical detection sensor 1 through transmissive region 301 . The reflected electromagnetic radiation passing through transmissive region 301 may then be detected by sensor 312 . The optical detection sensor 1 may determine that a nearby object is present based upon the reflected signal detected by sensor 312 .
- a portion of the electromagnetic radiation generated by device 101 may be detected by sensor 311 .
- the optical detection sensor may determine whether device 101 is functioning properly.
- optical detection sensor 1 may include a reflective region that reflects a portion of the electromagnetic radiation generated by device 101 to sensor 311 .
- transmissive region 302 may be formed in a shape that enables a portion of the electromagnetic radiation generated by device 101 to be transmitted therethrough, and a portion of the electromagnetic radiation to be reflected to sensor 311 .
- FIG. 1A shows in example in which the transmissive region 302 has L-shape.
- the right side of the transmissive region 302 extends only partially through the encapsulant 303 . Electromagnetic radiation incident upon the right side of transmissive region 302 is reflected by the uppermost edge of the transmissive region 302 , causing a portion of the electromagnetic radiation produced by device 101 to be detected by sensor 311 .
- Transmissive region 302 may have an L-shape or any other suitable shape.
- transmissive region 302 may have a shape suitable for reflecting a portion of the electromagnetic radiation incident theron while transmitting a portion of the electromagnetic radiation therethrough.
- the transmissive region 302 may include a reflective portion different from the uppermost and lowermost surfaces of region 302 .
- FIG. 1B shows that solder balls 105 may be optionally formed on the lower surface of the optical detection sensor 1 .
- solder balls 105 may be formed on the metal plug(s) 103 .
- FIG. 2 shows a bottom view of the optical detection sensor 1 , according to some embodiments. As shown in FIG. 2 , contact regions of the metal plugs 103 may be exposed at the bottom surface of the encapsulant 104 .
- FIG. 3 schematically shows a top view of the optical system 100 , illustrating device 101 for producing electromagnetic radiation as well as sensor chip 102 .
- the method of forming optical detection sensor 1 may include a method for producing a selectively transmissive structure 300 , as illustrated in FIGS. 4-6 .
- FIGS. 4 and 5 illustrate a technique for forming a transmissive region 302 having an L-shape, according to some embodiments.
- the transmissive region 302 may be formed from a glass panel 400 . Any suitable shape of glass panel 400 may be used.
- the glass panel 400 may be cut in a cross-hatched pattern, as shown in FIG. 4 , to produce trenches 302 ( a ) in the glass panel, as shown in FIG. 5 .
- the glass panel 400 may then be cut along the dashed lines shown in FIG. 5 to produce an L-shaped transmissive region 302 .
- Transmissive regions 301 having a rectangular cross section may be formed by cutting portions of a glass panel that do not include trenches 302 ( a ).
- FIG. 6A shows that the transmissive regions 301 and 302 may be affixed to an adhesive 601 , which may be an adhesive tape.
- the adhesive 601 may be disposed on a solid handle substrate 602 , which may be formed of a metal, a semiconductor, or another solid material (e.g., a rigid material).
- the transmissive regions 301 and 302 may be encapsulated in encapsulant 303 .
- Regions 301 and 303 may be encapsulated in an epoxy material which may be heated to a temperature of 120° C. to 150° C. and cured for ten minutes, for example.
- the techniques described herein are not limited to a particular encapsulant material or curing technique, as any suitable encapsulant materials or curing techniques may be used.
- the adhesive 601 may be removed.
- the adhesive 601 may be removed by removing the handle substrate 602 .
- the encapsulant 303 may be subjected to a thinning process to expose the surfaces of transmissive regions 301 and 302 to enable light to pass therethrough.
- a thinning process may be used to reduce the thickness of the encapsulant 303 , such as a grinding process, for example.
- the selectively transmissive structure 300 can thereby be produced using the process illustrated in FIGS. 4-6 .
- An optical system 100 may be formed using a process such as that illustrated in FIG. 7 .
- elements of optical system 100 may be placed on an adhesive 701 , such as adhesive tape.
- an adhesive 701 such as adhesive tape.
- a device 101 for emitting electromagnetic radiation, sensor chip 102 and one or more one or more metal plugs 103 may be placed on adhesive 701 .
- Adhesive 701 may be formed on a carrier substrate (not shown).
- device 101 , sensor chip 102 and one or more one or more metal plugs 103 may be encapsulated in an encapsulant 104 such as an epoxy. Any suitable curing process may be used for encapsulant 104 , such as the process discussed above.
- the adhesive 701 may then be removed from the encapsulant 104 .
- the optical system 100 may be thinned. Any suitable thinning process may be used to reduce the thickness of the encapsulant 104 , such as a grinding process, for example.
- the thinning process may expose the surface of metal plugs 103 to enable contact to be made thereto.
- the thinning process may reduce the thickness of the encapsulant 104 to expose the surface of the sensor chip 102 , as shown in FIG. 7D , or may not expose the surface of the sensor chip 102 , as shown in FIG. 7E .
- Thinning the encapsulant in a manner that exposes the surface of the sensor chip 102 may reduce warping of the optical system 100 .
- sensor chip 102 is formed of silicon, exposing the surface of the sensor chip 102 may allow infrared radiation to penetrate the optical detection sensor through the sensor chip 102 , which may be undesirable. Infrared radiation may be prevented from penetrating the sensor chip 102 by forming a protective layer 109 opaque to the infrared radiation on the bottom of the exposed sensor chip 102 , as shown in FIG. 7F . As further shown in FIG. 7F , an isolation layer 106 , metal interconnect 107 and passivation layer 108 may be formed on top of the structure. Alternatively, if the thinning process does not expose the surface of the sensor chip 102 , the resulting structure with isolation layer 106 , metal interconnect 107 and passivation layer 108 is shown in FIG. 7G , according to some embodiments.
- a bonding material 200 may be applied to the upper surface of optical system 100 .
- bonding material 200 may be printed on optical system 100 .
- Bonding material 200 may be a two-sided glue or any other suitable bonding material.
- opaque region 202 may be formed of bonding material 200 .
- FIG. 8B shows the same step as illustrated in FIG. 8A for the case where the encapsulant is not thinned all the way to sensor chip 200 .
- FIG. 9 shows the bonding of the optical system 100 and the selectively transmissive structure 300 .
- the optical system 100 may be brought into contact with the selectively transmissive structure 300 such that bonding material 200 holds the structures together.
- FIG. 10 shows that optionally, one or more solder balls 105 may be formed on the one or more metal plugs 103 .
- multiple optical detection sensors may be formed using the process described above.
- multiple structures 100 may be formed in the same layer of encapsulant material, and multiple structures 300 may be formed in another layer of encapsulant material, and then the two structures may be bonded together.
- a singulation step may be performed to separate the individual optical detection sensors by dicing or otherwise cutting the combined structure, as illustrated in FIG. 11 .
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
An optical detection sensor and method of forming same. The optical detection sensor be a proximity detection sensor that includes an optical system and a selectively transmissive structure. Electromagnetic radiation such as laser light can be emitted through a transmissive portion of the selectively transmissive structure. A reflected beam can be detected to determine the presence of an object.
Description
- This application claims priority under 35 U.S.C. 119(e) to U.S. provisional application 61/559,532, filed Nov. 14, 2011, titled “WAFER LEVEL PACKAGING, OPTICAL DETECTION SENSOR AND METHOD OF FORMING SAME,” which is hereby incorporated by reference to the maximum extent allowable by law.
- 1. Technical Field
- The techniques described herein relate to an optical detection sensor, a wafer level package and a technique for forming the same.
- 2. Discussion of the Related Art
- A proximity detector is an optical detection sensor that is capable of detecting the presence of a nearby object. An optical detection sensor may emit a beam of electromagnetic radiation (e.g., infrared radiation) and detect a reflected beam from a target object.
- Some embodiments relate to an optical detection apparatus. The optical detection apparatus includes a device configured to emit electromagnetic radiation, a structure including a first region of transmissive material to allow a first portion of the electromagnetic radiation to pass through the first region to an exterior of the optical detection apparatus. The structure is configured to reflect a second portion of the electromagnetic radiation. The optical detection apparatus also includes a sensor configured to detect the second portion of the electromagnetic radiation.
- Some embodiments relate to a method of forming at least a selectively transmissive structure. The method includes forming a first region of transmissive material, forming a second region of transmissive material. The second region of transmissive material having a shape different from that of the first region of transmissive material. The method also includes contacting the first and second regions of transmissive material to an adhesive, and encapsulating the first and second regions of transmissive material.
- Some embodiments relate to a method of forming at least an optical system. The method includes contacting a device for emitting electromagnetic radiation and a sensor chip to an adhesive material, the sensor chip having a plurality of optical sensors, and encapsulating the device for emitting electromagnetic radiation and the sensor chip.
- The foregoing summary is provided by way of illustration and is not intended to be limiting.
- In the drawings, each identical or nearly identical component that is illustrated in various figures is represented by a like reference character. For purposes of clarity, not every component may be labeled in every drawing. The drawings are not necessarily drawn to scale, with emphasis instead being placed on illustrating various aspects of at least one embodiment.
-
FIGS. 1A and 1B show cross sections of optical detection sensors, according to some embodiments. -
FIG. 2 shows a bottom view of an optical detection sensor. -
FIG. 3 schematically shows a top view of an optical system of the optical detection sensor. -
FIG. 4 shows an example of a glass panel from which transmissive glass regions may be formed. -
FIG. 5 shows a cross section of the glass panel having trenches formed therein. -
FIGS. 6A-6D show a process of forming a selectively transmissive structure, according to some embodiments. -
FIG. 7A-7G show a process of forming an optical system of an optical detection sensor, according to some embodiments. The optical system may be formed on the wafer level, e.g., with a 200 mm or 300 mm wafer size. -
FIGS. 8A-8B show a step of applying a bonding material to the optical system, according to some embodiments. -
FIG. 9 shows a step of bonding the optical system to the selectively transmissive structure, according to some embodiments. -
FIG. 10 shows a step of forming solder ball(s) on metal plugs on the bottom of the optical detection sensor, according to some embodiments. -
FIG. 11 shows a step of separating a plurality of optical detection sensors formed in the same structure, according to some embodiments. - Described herein is an optical detection sensor and method of forming the same.
FIG. 1A shows a cross-section of anoptical detection sensor 1 that may include anoptical system 100 bonded to a selectivelytransmissive structure 300 using abonding material 200, according to some embodiments. - As shown in
FIG. 1A , theoptical system 100 may include adevice 101 configured to emit an electromagnetic signal and adetection sensor chip 102 that includes afirst sensor 311 for detecting an electromagnetic signal and asecond sensor 312 for detecting an electromagnetic signal.Sensor chip 102 may include electronics such as amplification circuitry and/or circuitry for determining whether an object has been detected.Device 101 may include a laser or other device for emitting electromagnetic radiation. Theoptical system 100 may also include one ormore metal plugs 103, ametal interconnect 107 contacting the metal plug(s) 103, and apassivation layer 108. Themetal plugs 103 andmetal interconnect 107 may be electrically coupled to thesensor chip 102. At least a portion of theoptical system 100 may be embedded in anencapsulant material 104, which may be a polymer material such as epoxy. - The selectively
transmissive structure 300 may include 301, 302 of transmissive material embedded in anregions encapsulant material 303, which may be a polymer material such as epoxy. In some embodiments,encapsulant material 303 may be formed of the same material as that ofencapsulant material 104. 301 and 302 of transmissive material may be formed of glass, or any other suitable transmissive material. For example,Regions 301 and 302 may be formed of a material capable of allowing electromagnetic radiation having a wavelength of the electromagnetic radiation emitted byregions device 101 to pass therethrough. Theencapsulant material 303 may be opaque to electromagnetic radiation having the wavelength of the electromagnetic radiation emitted bydevice 101. Thus, 301 and 302 may operate as windows enabling electromagnetic radiation to selectively pass throughregions structure 300. In some embodiments, selectivelytransmissive structure 300 andoptical device 100 may be formed on a 200 mm or 300 mm diameter wafer with multiple devices according to the same pattern. - A
bonding material 200 may be disposed between theoptical system 100 and the selectivelytransmissive structure 300 to bond theoptical system 100 to the selectivelytransmissive structure 300. Anysuitable bonding material 200 may be used, such as a double sided glue, for example. In addition, anopaque region 202 may be disposed between theoptical system 100 andstructure 300 in a region between the 311 and 312.sensors Opaque region 202 may prevent the direct passage of light between thedevice 101 andcavity 201, thereby preventing direct passage of light fromdevice 101 tosensor 312. - In operation,
optical detection sensor 1 may detect a nearby object by transmitting, throughtransmissive region 302, the electromagnetic radiation produced bydevice 101. If a nearby object is present, the transmitted electromagnetic radiation may be reflected by the object and then pass back into the interior of theoptical detection sensor 1 throughtransmissive region 301. The reflected electromagnetic radiation passing throughtransmissive region 301 may then be detected bysensor 312. Theoptical detection sensor 1 may determine that a nearby object is present based upon the reflected signal detected bysensor 312. - A portion of the electromagnetic radiation generated by
device 101 may be detected bysensor 311. By detecting the electromagnetic radiation generated bydevice 101, the optical detection sensor may determine whetherdevice 101 is functioning properly. - In some embodiments,
optical detection sensor 1 may include a reflective region that reflects a portion of the electromagnetic radiation generated bydevice 101 tosensor 311. For example, as shown inFIG. 1A ,transmissive region 302 may be formed in a shape that enables a portion of the electromagnetic radiation generated bydevice 101 to be transmitted therethrough, and a portion of the electromagnetic radiation to be reflected tosensor 311.FIG. 1A shows in example in which thetransmissive region 302 has L-shape. In this example, the right side of thetransmissive region 302 extends only partially through theencapsulant 303. Electromagnetic radiation incident upon the right side oftransmissive region 302 is reflected by the uppermost edge of thetransmissive region 302, causing a portion of the electromagnetic radiation produced bydevice 101 to be detected bysensor 311. -
Transmissive region 302 may have an L-shape or any other suitable shape. For example,transmissive region 302 may have a shape suitable for reflecting a portion of the electromagnetic radiation incident theron while transmitting a portion of the electromagnetic radiation therethrough. Thetransmissive region 302 may include a reflective portion different from the uppermost and lowermost surfaces ofregion 302. -
FIG. 1B shows thatsolder balls 105 may be optionally formed on the lower surface of theoptical detection sensor 1. For example, one ormore solder balls 105 may be formed on the metal plug(s) 103. -
FIG. 2 shows a bottom view of theoptical detection sensor 1, according to some embodiments. As shown inFIG. 2 , contact regions of the metal plugs 103 may be exposed at the bottom surface of theencapsulant 104. -
FIG. 3 schematically shows a top view of theoptical system 100, illustratingdevice 101 for producing electromagnetic radiation as well assensor chip 102. - A technique for fainting the
optical detection sensor 1 will be described. The method of formingoptical detection sensor 1 may include a method for producing a selectivelytransmissive structure 300, as illustrated inFIGS. 4-6 . -
FIGS. 4 and 5 illustrate a technique for forming atransmissive region 302 having an L-shape, according to some embodiments. As shown inFIG. 4 , thetransmissive region 302 may be formed from aglass panel 400. Any suitable shape ofglass panel 400 may be used. Theglass panel 400 may be cut in a cross-hatched pattern, as shown inFIG. 4 , to produce trenches 302(a) in the glass panel, as shown inFIG. 5 . Theglass panel 400 may then be cut along the dashed lines shown inFIG. 5 to produce an L-shapedtransmissive region 302.Transmissive regions 301 having a rectangular cross section may be formed by cutting portions of a glass panel that do not include trenches 302(a). -
FIG. 6A shows that the 301 and 302 may be affixed to an adhesive 601, which may be an adhesive tape. The adhesive 601 may be disposed on atransmissive regions solid handle substrate 602, which may be formed of a metal, a semiconductor, or another solid material (e.g., a rigid material). - As shown in
FIG. 6B , the 301 and 302 may be encapsulated intransmissive regions encapsulant 303. 301 and 303 may be encapsulated in an epoxy material which may be heated to a temperature of 120° C. to 150° C. and cured for ten minutes, for example. However, the techniques described herein are not limited to a particular encapsulant material or curing technique, as any suitable encapsulant materials or curing techniques may be used.Regions - As shown in
FIG. 6C , the adhesive 601 may be removed. For example, the adhesive 601 may be removed by removing thehandle substrate 602. - As shown in
FIG. 6D , theencapsulant 303 may be subjected to a thinning process to expose the surfaces of 301 and 302 to enable light to pass therethrough. Any suitable thinning process may be used to reduce the thickness of thetransmissive regions encapsulant 303, such as a grinding process, for example. - The selectively
transmissive structure 300 can thereby be produced using the process illustrated inFIGS. 4-6 . - An
optical system 100 may be formed using a process such as that illustrated inFIG. 7 . - As shown in
FIG. 7A , elements ofoptical system 100 may be placed on an adhesive 701, such as adhesive tape. For example, adevice 101 for emitting electromagnetic radiation,sensor chip 102 and one or more one or more metal plugs 103 may be placed onadhesive 701. Adhesive 701 may be formed on a carrier substrate (not shown). - As shown in
FIG. 7B ,device 101,sensor chip 102 and one or more one or more metal plugs 103 may be encapsulated in anencapsulant 104 such as an epoxy. Any suitable curing process may be used forencapsulant 104, such as the process discussed above. - As shown in
FIG. 7C , the adhesive 701 may then be removed from theencapsulant 104. - As shown in
FIG. 7D and 7E , theoptical system 100 may be thinned. Any suitable thinning process may be used to reduce the thickness of theencapsulant 104, such as a grinding process, for example. The thinning process may expose the surface of metal plugs 103 to enable contact to be made thereto. The thinning process may reduce the thickness of theencapsulant 104 to expose the surface of thesensor chip 102, as shown inFIG. 7D , or may not expose the surface of thesensor chip 102, as shown inFIG. 7E . Thinning the encapsulant in a manner that exposes the surface of thesensor chip 102 may reduce warping of theoptical system 100. Ifsensor chip 102 is formed of silicon, exposing the surface of thesensor chip 102 may allow infrared radiation to penetrate the optical detection sensor through thesensor chip 102, which may be undesirable. Infrared radiation may be prevented from penetrating thesensor chip 102 by forming aprotective layer 109 opaque to the infrared radiation on the bottom of the exposedsensor chip 102, as shown inFIG. 7F . As further shown inFIG. 7F , anisolation layer 106,metal interconnect 107 andpassivation layer 108 may be formed on top of the structure. Alternatively, if the thinning process does not expose the surface of thesensor chip 102, the resulting structure withisolation layer 106,metal interconnect 107 andpassivation layer 108 is shown inFIG. 7G , according to some embodiments. - As shown in
FIG. 8A , abonding material 200 may be applied to the upper surface ofoptical system 100. For example,bonding material 200 may be printed onoptical system 100.Bonding material 200 may be a two-sided glue or any other suitable bonding material. In some embodiments,opaque region 202 may be formed ofbonding material 200.FIG. 8B shows the same step as illustrated inFIG. 8A for the case where the encapsulant is not thinned all the way tosensor chip 200. -
FIG. 9 shows the bonding of theoptical system 100 and the selectivelytransmissive structure 300. Theoptical system 100 may be brought into contact with the selectivelytransmissive structure 300 such thatbonding material 200 holds the structures together. -
FIG. 10 shows that optionally, one ormore solder balls 105 may be formed on the one or more metal plugs 103. - In some embodiments, multiple optical detection sensors may be formed using the process described above. For example,
multiple structures 100 may be formed in the same layer of encapsulant material, andmultiple structures 300 may be formed in another layer of encapsulant material, and then the two structures may be bonded together. A singulation step may be performed to separate the individual optical detection sensors by dicing or otherwise cutting the combined structure, as illustrated inFIG. 11 . - The apparatus and techniques described herein are not limited in application to the details of construction and the arrangement of components set forth in the foregoing description or illustrated in the drawings. The apparatus and techniques described herein are capable of other embodiments and of being practiced or of being carried out in various ways. Also, the phraseology and terminology used herein is for the purpose of description and should not be regarded as limiting. The use of “including,” “comprising,” or “having,” “containing,” “involving,” and variations thereof herein, is meant to encompass the items listed thereafter and equivalents thereof as well as additional items.
- Having thus described several aspects of at least one embodiment, it is to be appreciated various alterations, modifications, and improvements will readily occur to those skilled in the art. Accordingly, the foregoing description and drawings are by way of example only.
Claims (23)
1. An optical detection apparatus, comprising:
a device configured to emit electromagnetic radiation;
a structure including a first region of transmissive material to allow a first portion of the electromagnetic radiation to pass through the first region to an exterior of the optical detection apparatus, the structure being configured to reflect a second portion of the electromagnetic radiation; and
a sensor configured to detect the second portion of the electromagnetic radiation.
2. The optical detection apparatus of claim 1 , wherein the first region is configured to reflect the second portion of the electromagnetic radiation.
3. The optical detection apparatus of claim 2 , wherein the first region has a first surface that receives the electromagnetic radiation and allows the first and second portions of the electromagnetic radiation to pass therethrough, wherein the first region has a second surface that reflects the second portion of the electromagnetic radiation.
4. The optical detection apparatus of claim 2 , wherein the first region has an L-shape.
5. The optical detection apparatus of claim 1 , wherein the sensor is a first sensor and the structure further includes a second sensor, the second sensor being configured to detect the first portion of the electromagnetic radiation, the first portion of the electromagnetic radiation being reflected from an object at an exterior of the optical detection sensor.
6. The optical detection apparatus of claim 5 , wherein the structure further comprises an opaque region separating the device and the second sensor.
7. The optical detection apparatus of claim 5 , wherein the structure further comprises a second region of transmissive material to allow the first portion of the electromagnetic radiation reflected from the object to pass through the second region to the second sensor.
8. The optical detection apparatus of claim 7 , wherein the first and second regions of transmissive material are embedded in a material that is opaque to the electromagnetic radiation.
9. The optical detection apparatus of claim 5 , wherein the first and second sensors are formed in a semiconductor chip.
10. The optical detection apparatus of claim 9 , wherein the semiconductor chip is embedded in a material that is opaque to the electromagnetic radiation.
11. The optical detection apparatus of claim 1 , wherein the first region of transmissive material is on a first side of the optical detection sensor and the optical detection sensor further comprises at least one conductive material on a second side of the optical detection sensor and electrically connected to the first sensor.
12. A method of forming at least a selectively transmissive structure, the method comprising:
forming a first region of transmissive material;
forming a second region of transmissive material;
contacting the first and second regions of transmissive material to an adhesive; and
encapsulating the first and second regions of transmissive material.
13. The method of claim 12 , wherein the second region of transmissive material has a shape different from that of the first region of transmissive material, and wherein forming the first region of transmissive material comprises:
forming trenches in a panel of transmissive material; and
cutting the panel of transmissive material along the trenches.
14. The method of claim 12 , wherein encapsulating the first and second regions of transmissive material comprises encapsulating the first and second regions of transmissive material in a polymer material.
15. The method of claim 14 , wherein the polymer material comprises an epoxy.
16. The method of claim 12 , further comprising removing at least a portion of the adhesive material after encapsulating the first and second regions of transmissive material.
17. The method of claim 12 , wherein the first and second regions of transmissive material are encapsulated in an encapsulant, and the method further comprises:
removing at least a portion of the encapsulant to expose a surface of the first region of transmissive material.
18. The method of claim 12 , wherein the first region of transmissive material is formed to have an L-shape.
19. The method of claim 12 , further comprising bonding the selectively transmissive structure to an optical system to form an optical detection apparatus.
20. A method of forming at least an optical system, the method comprising:
contacting a device for emitting electromagnetic radiation and a sensor chip to an adhesive material, the sensor chip having a plurality of optical sensors; and
encapsulating the device for emitting electromagnetic radiation and the sensor chip.
21. The method of claim 20 , further comprising:
contacting a metal plug to the adhesive material; and
encapsulating the metal plug with the device for emitting electromagnetic radiation and the sensor chip.
22. The method of claim 21 , wherein the metal plug, the device and the sensor chip are encapsulated in an encapsulant, and wherein the method further comprises reducing a thickness of the encapsulant to expose a surface of the metal plug.
23. The method of claim 20 , further comprising:
bonding the optical system to a selectively transmissive structure to form an optical detection apparatus.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/670,766 US20130119282A1 (en) | 2011-11-14 | 2012-11-07 | Wafer level packaging, optical detection sensor and method of forming same |
| US14/968,359 US9991409B2 (en) | 2011-11-14 | 2015-12-14 | Wafer level packaging, optical detection sensor and method of forming same |
| US15/969,908 US10381504B2 (en) | 2011-11-14 | 2018-05-03 | Wafer level packaging, optical detection sensor and method of forming same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161559532P | 2011-11-14 | 2011-11-14 | |
| US13/670,766 US20130119282A1 (en) | 2011-11-14 | 2012-11-07 | Wafer level packaging, optical detection sensor and method of forming same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/968,359 Continuation US9991409B2 (en) | 2011-11-14 | 2015-12-14 | Wafer level packaging, optical detection sensor and method of forming same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20130119282A1 true US20130119282A1 (en) | 2013-05-16 |
Family
ID=48279706
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/670,766 Abandoned US20130119282A1 (en) | 2011-11-14 | 2012-11-07 | Wafer level packaging, optical detection sensor and method of forming same |
| US14/968,359 Active US9991409B2 (en) | 2011-11-14 | 2015-12-14 | Wafer level packaging, optical detection sensor and method of forming same |
| US15/969,908 Active US10381504B2 (en) | 2011-11-14 | 2018-05-03 | Wafer level packaging, optical detection sensor and method of forming same |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/968,359 Active US9991409B2 (en) | 2011-11-14 | 2015-12-14 | Wafer level packaging, optical detection sensor and method of forming same |
| US15/969,908 Active US10381504B2 (en) | 2011-11-14 | 2018-05-03 | Wafer level packaging, optical detection sensor and method of forming same |
Country Status (1)
| Country | Link |
|---|---|
| US (3) | US20130119282A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170287886A1 (en) * | 2016-03-31 | 2017-10-05 | Stmicroelectronics Pte Ltd | Wafer level proximity sensor |
| US10847672B2 (en) * | 2018-05-07 | 2020-11-24 | Lite-On Singapore Pte. Ltd. | Proximity sensing module with dual transmitters for emitting signals to different objects from different distances |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130119282A1 (en) | 2011-11-14 | 2013-05-16 | Stmicroelectronics Pte Ltd. | Wafer level packaging, optical detection sensor and method of forming same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5010024A (en) * | 1987-03-04 | 1991-04-23 | Advanced Micro Devices, Inc. | Passivation for integrated circuit structures |
| US5150438A (en) * | 1991-07-29 | 1992-09-22 | Motorola, Inc. | Optocoupler apparatus with reflective overcoat |
| US20050286840A1 (en) * | 2002-10-29 | 2005-12-29 | Ho Soo K | Double mold optocouplers |
| US20100258710A1 (en) * | 2009-04-14 | 2010-10-14 | Intersil Americas Inc. | Optical sensors that reduce spectral reflections |
| US20110024627A1 (en) * | 2009-07-31 | 2011-02-03 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Proximity Sensor with Ceramic Housing and Light Barrier |
| US20130049218A1 (en) * | 2011-08-31 | 2013-02-28 | Zhiwei Gong | Semiconductor device packaging having pre-encapsulation through via formation |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6845118B1 (en) | 1999-01-25 | 2005-01-18 | Optical Communication Products, Inc. | Encapsulated optoelectronic devices with controlled properties |
| JP2003287420A (en) * | 2002-03-27 | 2003-10-10 | Sharp Corp | Ranging sensor, electronic device having the same, and method of manufacturing ranging sensor |
| US20040201080A1 (en) * | 2003-04-08 | 2004-10-14 | Suresh Basoor | Leadless leadframe electronic package and IR transceiver incorporating same |
| US7675131B2 (en) * | 2007-04-05 | 2010-03-09 | Micron Technology, Inc. | Flip-chip image sensor packages and methods of fabricating the same |
| US7791016B2 (en) * | 2007-10-29 | 2010-09-07 | Hamamatsu Photonics K.K. | Photodetector |
| US8373254B2 (en) * | 2008-07-29 | 2013-02-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure for reducing integrated circuit corner peeling |
| US20100163759A1 (en) * | 2008-12-31 | 2010-07-01 | Stmicroelectronics S.R.L. | Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process |
| US8957380B2 (en) * | 2009-06-30 | 2015-02-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
| US8304850B2 (en) * | 2009-12-22 | 2012-11-06 | Texas Instruments Incorporated | Integrated infrared sensors with optical elements, and methods |
| US8384559B2 (en) | 2010-04-13 | 2013-02-26 | Silicon Laboratories Inc. | Sensor device with flexible interface and updatable information store |
| TWM428490U (en) * | 2011-09-27 | 2012-05-01 | Lingsen Precision Ind Ltd | Optical module packaging unit |
| TWM424605U (en) * | 2011-09-27 | 2012-03-11 | Lingsen Precision Ind Ltd | The optical module package structure |
| US20130119282A1 (en) | 2011-11-14 | 2013-05-16 | Stmicroelectronics Pte Ltd. | Wafer level packaging, optical detection sensor and method of forming same |
-
2012
- 2012-11-07 US US13/670,766 patent/US20130119282A1/en not_active Abandoned
-
2015
- 2015-12-14 US US14/968,359 patent/US9991409B2/en active Active
-
2018
- 2018-05-03 US US15/969,908 patent/US10381504B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5010024A (en) * | 1987-03-04 | 1991-04-23 | Advanced Micro Devices, Inc. | Passivation for integrated circuit structures |
| US5150438A (en) * | 1991-07-29 | 1992-09-22 | Motorola, Inc. | Optocoupler apparatus with reflective overcoat |
| US20050286840A1 (en) * | 2002-10-29 | 2005-12-29 | Ho Soo K | Double mold optocouplers |
| US20100258710A1 (en) * | 2009-04-14 | 2010-10-14 | Intersil Americas Inc. | Optical sensors that reduce spectral reflections |
| US20110024627A1 (en) * | 2009-07-31 | 2011-02-03 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Proximity Sensor with Ceramic Housing and Light Barrier |
| US20130049218A1 (en) * | 2011-08-31 | 2013-02-28 | Zhiwei Gong | Semiconductor device packaging having pre-encapsulation through via formation |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170287886A1 (en) * | 2016-03-31 | 2017-10-05 | Stmicroelectronics Pte Ltd | Wafer level proximity sensor |
| US11069667B2 (en) * | 2016-03-31 | 2021-07-20 | Stmicroelectronics Pte Ltd | Wafer level proximity sensor |
| US11996397B2 (en) | 2016-03-31 | 2024-05-28 | Stmicroelectronics Pte Ltd | Wafer level proximity sensor |
| US10847672B2 (en) * | 2018-05-07 | 2020-11-24 | Lite-On Singapore Pte. Ltd. | Proximity sensing module with dual transmitters for emitting signals to different objects from different distances |
Also Published As
| Publication number | Publication date |
|---|---|
| US9991409B2 (en) | 2018-06-05 |
| US10381504B2 (en) | 2019-08-13 |
| US20160099373A1 (en) | 2016-04-07 |
| US20180248068A1 (en) | 2018-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9305967B1 (en) | Wafer Level optoelectronic device packages and methods for making the same | |
| US9570648B2 (en) | Wafer level optical proximity sensors and systems including wafer level optical proximity sensors | |
| US8507321B2 (en) | Chip package and method for forming the same | |
| CN102738132B (en) | Comprise the semiconductor package body of optical semiconductor device | |
| US8536671B2 (en) | Chip package | |
| US9721837B2 (en) | Wafer level optoelectronic device packages with crosstalk barriers and methods for making the same | |
| JP5608521B2 (en) | Semiconductor wafer dividing method, semiconductor chip and semiconductor device | |
| US9231018B2 (en) | Wafer level packaging structure for image sensors and wafer level packaging method for image sensors | |
| US20130248887A1 (en) | Optical electronic package | |
| CN106653741B (en) | Proximity sensor, electronic device, and method of making a proximity sensor | |
| US20130009173A1 (en) | Optical electronic package | |
| JP6312872B2 (en) | Light source integrated light sensor | |
| JP2001035972A (en) | Semiconductor device and manufacturing method thereof | |
| EP3762970B1 (en) | Wafer-level method for manufacturing optoelectronic modules | |
| US10381504B2 (en) | Wafer level packaging, optical detection sensor and method of forming same | |
| TWI455576B (en) | Imaging device with photo sensor and manufacturing method thereof | |
| US9018645B2 (en) | Optoelectronics assembly and method of making optoelectronics assembly | |
| JP6104624B2 (en) | Semiconductor device manufacturing method and semiconductor device | |
| KR20160020371A (en) | Digital radiation sensor package | |
| CN102263116A (en) | Imaging device with optical sensor and manufacturing method thereof | |
| TW202412294A (en) | Image sensor packaging structures and related methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: STMICROELECTRONICS PTE LTD., SINGAPORE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:JIN, YONGGANG;LIM, WEE CHIN JUDY;SIGNING DATES FROM 20121109 TO 20121112;REEL/FRAME:029361/0961 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |