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US20130101752A1 - Method for depositing cyclic thin film - Google Patents

Method for depositing cyclic thin film Download PDF

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Publication number
US20130101752A1
US20130101752A1 US13/808,111 US201113808111A US2013101752A1 US 20130101752 A1 US20130101752 A1 US 20130101752A1 US 201113808111 A US201113808111 A US 201113808111A US 2013101752 A1 US2013101752 A1 US 2013101752A1
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United States
Prior art keywords
insulating film
silicon
chamber
depositing
reaction gas
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Abandoned
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US13/808,111
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English (en)
Inventor
Hai Won Kim
Sang Ho Woo
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Eugene Technology Co Ltd
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Eugene Technology Co Ltd
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Assigned to EUGENE TECHNOLOGY CO., LTD. reassignment EUGENE TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, HAI WON, WOO, SANG HO
Publication of US20130101752A1 publication Critical patent/US20130101752A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/145—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • H10P14/24—
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6682—
    • H10P14/69215—
    • H10P14/69433—
    • H10P14/3411—

Definitions

  • the present disclosure relates to a method of depositing a cyclic thin film and more particularly, to a method of depositing a cyclic thin film, which forms an insulating film including silicon.
  • a thinner insulating film is required for realizing the fine structure, but if the insulating film is formed to a thin thickness, film properties such as insulation characteristic are degraded. Also, it is becoming more difficult to form a thin film with a thin thickness while obtaining excellent step coverage.
  • the object of the present invention is to resolve the above-mentioned problem and to provide a method of deposing an insulating film having excellent film properties and step coverage.
  • the present invention provides a method of depositing a cyclic thin film having excellent film properties and step coverage.
  • a method of depositing a cyclic thin film comprising the steps of depositing an insulating film by repeatedly performing a deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded, a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber, a reaction step for forming the deposited silicon as an insulating film including silicon by supplying a first reaction gas into the chamber and a second purge step for removing a non-reacted first reaction gas and a reacted byproduct from the chamber; and densifying the insulating film including silicon by supplying a plasma atmosphere into the chamber.
  • the first reaction gas may be one or more gases selected from a group consisting of O 2 , O 3 , N 2 , and NH 3 .
  • the insulating film including silicon may be a silicon oxide film or silicon nitride film.
  • the step of densifying the insulting film including silicon may comprise forming the plasma atmosphere by injecting one or more ignition gases selected from a group consisting of Ar, He, Kr, and Xe.
  • the reaction step may use O * (oxygen radical) or O 2— (oxygen anion), formed by using plasma at an O 2 atmosphere, as the first reaction gas.
  • O * oxygen radical
  • O 2— oxygen anion
  • the step of densifying the insulting film including silicon may inject the ignition gas and one or more second reaction gases selected from the group consisting of O 2 , O 3 , N 2 , and NH 3 .
  • the step of depositing insulating film may be performed while maintaining a pressure inside the chamber as 0.05 Torr to 10 Torr.
  • the step of densifying the insulting film including silicon may be performed while maintaining a pressure inside the chamber as 0.05 Torr to 10 Torr.
  • the deposition step, the first purge step, the reaction step, and the second purge step may be repeatedly performed three to ten times before the step of densifying the insulting film including silicon.
  • the steps of depositing the insulating film and densifying the insulting film including silicon may be repeatedly performed.
  • FIG. 2 is a sectional view schematically illustrating a semiconductor manufacturing apparatus for performing a method of depositing a cyclic thin film, according to an embodiment of the present invention.
  • FIG. 3 is a diagram for describing a method of depositing a cyclic thin film, according to an embodiment of the present invention.
  • FIG. 4A to 4C are sectional views illustrating a step of depositing silicon, according to an embodiment of the present invention.
  • FIG. 5A to 5C are sectional views illustrating a step of forming an insulating film including silicon, according to an embodiment of the present invention.
  • FIG. 6 is a sectional view illustrating an insulating film formed of a plurality of silicon, according to an embodiment of the present invention.
  • FIG. 7A to 7C are sectional views illustrating a step of densifying an insulating film, according to an embodiment of the present invention.
  • FIG. 8 is a sectional view illustrating an insulating film formed of silicon, according to another embodiment of the present invention.
  • FIG. 1 is a flowchart illustrating a method of depositing a cyclic thin film according to an embodiment of the present invention.
  • a substrate is loaded into a chamber of a semiconductor manufacturing apparatus S 100 .
  • An insulating film is deposited on the substrate loaded into the chamber S 200 , and in the step S 200 , a silicon deposition step S 210 , a first purge step S 220 , a reaction step S 230 and a second purge step S 240 are performed together to deposit the insulating film.
  • silicon is deposited on the substrate by injecting a silicon (Si) precursor into the chamber for depositing silicon.
  • the first purge step of removing a non-reacted silicon precursor and a reaction byproduct is performed in the step S 220 .
  • the reaction step for forming an insulating film including silicon by reacting silicon formed on the substrate with a reaction gas is performed in the step S 230 .
  • the insulating film including silicon may be a silicon oxide film or a silicon nitride film.
  • a first reaction gas may be injected into the chamber.
  • the first reaction gas may be one or more gases selected from the group consisting of O 2 , O 3 , N 2 , and NH 3 .
  • the first reaction gas may be a gas including an oxygen atom such as O 2 or O 3 .
  • the first reaction gas may be O * (oxygen radical) or O 2— (oxygen anion) that is formed of plasma at an O 2 atmosphere.
  • the first reaction gas may be a gas including a nitrogen atom such as N 2 or NH 3 .
  • the second purge step for removing a reacted byproduct and a reaction gas or an ignition gas from the chamber is performed in the step S 240 .
  • the silicon deposition step S 210 , the first purge step S 220 , the reaction step S 230 and the second purge step S 240 may be repeatedly performed.
  • the silicon deposition step S 210 , the first purge step S 220 , the reaction step S 230 and the second purge step S 240 may be repeated three to ten times.
  • a temperature of the substrate and a pressure inside the chamber may be constantly maintained in the step S 200 of depositing the insulating film including the silicon deposition step S 210 , the first purge step S 220 , the reaction step S 230 and the second purge step S 240 .
  • each silicon deposition step S 210 at least one silicon atomic layer may be formed on the substrate.
  • the insulating film including silicon may be formed to have a thickness of several or tens of A.
  • a step of densifying the insulting film including silicon is performed in a step S 300 .
  • a plasma atmosphere may be formed inside the chamber.
  • a second reaction gas may be additionally injected into the chamber.
  • the second reaction gas for example, may be one or more gases selected from the group consisting of O 2 , O 3 , N 2 , and NH 3 .
  • the step S 200 of depositing the insulating film and step S 300 of densifying the insulting film may be repeatedly performed as needed in a step S 400 .
  • the substrate may be unloaded from the chamber in a step S 900 .
  • FIG. 2 is a sectional view schematically illustrating a semiconductor manufacturing apparatus for performing a method of depositing a cyclic thin film, according to an embodiment of the present invention.
  • an introduction part 12 for introducing a reaction gas into a chamber 11 of a semiconductor manufacturing apparatus 10 is formed.
  • the reaction gas introduced by the introduction part 12 may be sprayed into the chamber 11 through a shower head 13 .
  • a substrate 100 for deposition is disposed on a chuck 14 , which is supported by a chuck support 16 . If necessary, the chuck 14 applies heat to the substrate 100 such that the substrate 100 has a certain temperature. Deposition is performed by the semiconductor manufacturing apparatus 10 and thereafter, discharge is performed by a discharge part 17 .
  • the semiconductor manufacturing apparatus 10 may include a plasma generation part 18 .
  • FIG. 3 is a diagram describing a method of depositing a cyclic thin film according to an embodiment of the present invention.
  • the injection and purge of a silicon precursor and the injection and purge of the first reaction gas are repeatedly performed. Purge after the injection of the silicon precursor and purge after the injection of the first reaction gas are repeatedly performed, and then a plasma atmosphere is formed. In a state where the plasma atmosphere has been formed, a second reaction gas may be injected as necessary.
  • the insulating film including silicon is formed by repeatedly performing the injection and purge of a silicon precursor and the injection and purge of a reaction gas, and thereafter, the insulating film including silicon is densified by forming a plasma atmosphere.
  • an insulating film including silicon and having a desired thickness can be obtained.
  • the method of depositing the cyclic thin film can be performed by repeatedly performing the injection and purge of the silicon precursor and the injection and purge of the first reaction gas, and moreover by repeatedly performing the steps of forming and densifying the insulating film including silicon.
  • FIG. 4A to 8 The method of depositing the cyclic thin film according to an embodiment of the present invention will be specifically described on a step-by-step with reference to FIG. 4A to 8 based on the above description.
  • reference numbers of FIGS. 1 to 3 may be used as necessary.
  • FIG. 4A to 4C are sectional views illustrating a step of depositing silicon according to an embodiment of the present invention.
  • FIG. 4A is a sectional view illustrating a step of injecting a silicon precursor according to an embodiment of the present invention.
  • a silicon precursor 50 is injected into the chamber 11 into which the substrate 100 is loaded.
  • the substrate 100 may include a semiconductor substrate such as a silicon or compound semiconductor wafer.
  • the substrate 100 may include a substrate material, which differs from a semiconductor, such as glass, metal, ceramic and quartz.
  • the silicon precursor 50 may be amino-based silane such as bisethylmethylaminosilane (BEMAS), bisdimethylaminosilane (BDMAS), BEDAS, tetrakisethylmethylaminosilane (TEMAS), tetrakisidimethylaminosilane (TDMAS), and TEDAS, or chloride-based silane such as hexachlorinedisilane (HCD).
  • BEMAS bisethylmethylaminosilane
  • BDMAS bisdimethylaminosilane
  • BEDAS tetrakisethylmethylaminosilane
  • TEMAS tetrakisethylmethylaminosilane
  • TDMAS tetrakisidimethylaminosilane
  • TEDAS chloride-based silane
  • chloride-based silane such as hexachlorinedisilane (HCD).
  • the substrate 100 may be maintained at a temperature of about 50° C. to about 600° C. for reacting with the silicon precursor 50 . Also, a pressure inside the chamber 11 into which the substrate 100 is loaded may be maintained about 0.05 Torr to about 10 Torr.
  • FIG. 4B is a sectional view illustrating a step of depositing silicon on the substrate according to an embodiment of the present invention.
  • a silicon atom may be deposited on the substrate 100 and thus a silicon layer 112 may be formed.
  • the silicon layer 112 may be formed of at least one silicon atomic layer.
  • a portion of the silicon precursors 50 may react with the substrate 100 , thereby forming one or more reacted byproducts 52 . Also, the other of the silicon precursors 50 may be remained in a non-reacted state without reacting with the substrate 100 .
  • FIG. 4C is a sectional view illustrating a step of performing a first purge step according to an embodiment of the present invention.
  • the silicon layer 112 is formed on the substrate 100 and then a purge step, which removes the remaining silicon precursors 50 in a non-reacted state and the reacted byproducts 52 from the chamber 11 , may be performed.
  • the purge step which removes the remaining silicon precursors 50 and the reacted byproducts 52 from the chamber 11 , may be called as a first purge step.
  • the substrate 100 may be maintained at a temperature of about 50° C. to about 600° C. Also, a pressure inside the chamber 11 into which the substrate 100 is loaded may be maintained about 0.05 Torr to about 10 Torr. That is, a temperature of the substrate 100 and a pressure inside the chamber 11 may be constantly maintained in the step of depositing the silicon layer 112 and the first purge step.
  • FIG. 5A to 5C are sectional views illustrating a step of forming an insulating film including silicon according to an embodiment of the present invention.
  • FIG. 5A is a sectional view illustrating a step of injecting a reaction gas according to an embodiment of the present invention.
  • a first reaction gas 60 is injected into the chamber 11 into which the substrate 100 is loaded.
  • the first reaction gas 60 may be one or more gases selected from the group consisting of O 2 , O 3 , N 2 , and NH 3 .
  • the first reaction gas 60 may be O * (oxygen radical) or O 2— (oxygen anion) that is formed by using plasma at an O 2 atmosphere.
  • the substrate 100 may be maintained at a temperature of about 50° C. to about 600° C. for reacting with the first reaction gas 60 . Also, a pressure inside the chamber 11 into which the substrate 100 is loaded may be maintained about 0.05 Torr to about 10 Torr.
  • FIG. 5B is a sectional view illustrating a step of depositing an insulating film including silicon on a substrate according to an embodiment of the present invention. Referring to FIG. 5B , by a portion of the first reaction gas 60 reacting with the silicon layer 112 , the insulating film 122 a including silicon may be formed on the substrate 100 .
  • the first reaction gas 60 may react with the silicon layer 112 , thereby forming a reacted byproduct 62 . Also, the other portion of the first reaction gas 60 may be remained in a non-reacted state without reacting with the silicon layer 112 .
  • the silicon layer 112 may react with the oxygen atom included in the first reaction gas 60 and thus be formed as a silicon oxide layer.
  • a gas including a nitrogen atom such as N 2 or NH 3
  • the silicon layer 112 may react with the nitrogen atom included in the first reaction gas 60 and thus be formed as a silicon nitride layer.
  • FIG. 5C is a sectional view illustrating a step of performing the second purge step according to an embodiment of the present invention.
  • the insulating film 112 a including silicon is formed on the substrate 100 , and then a purge step, which removes the remaining first reaction gas 60 in a non-reacted state and the reacted byproducts 62 from the chamber 11 , may be performed.
  • the purge step which removes the remaining first reaction gas 60 and the reacted byproducts 62 from the chamber 11 , may be called as the second purge step.
  • the substrate 100 may be maintained at a temperature of about 50° C. to about 600° C. Also, a pressure inside the chamber 11 into which the substrate 100 is loaded may be maintained about 0.05 Torr to about 10 Torr.
  • FIG. 6 is a sectional view illustrating forming a plurality of insulating films including silicon according to an embodiment of the present invention.
  • an insulating film 122 including a plurality of insulating films 122 a to 122 c including silicon is formed.
  • the insulating film 122 may have a thickness of several or tens of ⁇ .
  • a step of depositing each insulating film 122 a, 122 b or 122 c including silicon may be repeatedly performed three to ten times such that the insulating film 122 includes three to ten insulating films 122 a to 122 c including silicon.
  • the insulating film 122 when the insulating film 122 is formed to include the plurality of insulating films 122 a to 122 c including silicon, the insulating film 122 can have excellent film properties and step coverage.
  • FIGS. 7A and 7B are sectional views illustrating a step of densifying the insulating film according to an embodiment of the present invention.
  • FIG. 7A is a sectional view illustrating a step of supplying a plasma atmosphere to the insulating film, according to an embodiment of the present invention.
  • plasma is applied onto the substrate 100 where the insulating film 122 is formed. That is, a plasma atmosphere is formed inside the chamber 11 into which the substrate 100 is loaded.
  • ICP Inductively Coupled Plasma
  • CCP Capacitively Coupled Plasma
  • MW Microwave
  • a power of about 100 W to about 3 kW may be applied for forming the plasma atmosphere.
  • one or more ignition gases selected from the group consisting of Ar, He, Kr, and Xe may be injected.
  • the ignition gas may be injected at a flow rate of about 100 sccm to about 3000 sccm.
  • a second reaction gas 64 may be additionally injected for more densifying the insulating film 122 at the plasma atmosphere.
  • the second reaction gas 64 may be one or more gases selected from the group consisting of O 2 , O 3 , N 2 , and NH 3 , or be O * (oxygen radical) or O 2— (oxygen anion) that is formed of plasma at an O 2 atmosphere.
  • a gas including an oxygen atom such as O 2 or O 3 may be used as the second reaction gas 64
  • O * (oxygen radical) or O 2— (oxygen anion) that is formed of plasma at the O 2 atmosphere may be used as the second reaction gas 64
  • H 2 may be used as the second reaction gas 64 .
  • the insulating film 122 is the silicon nitride film
  • a gas including a nitrogen atom such as N 2 or NH 3 may be used as the second reaction gas 64
  • H 2 may be used as the second reaction gas 64 .
  • FIG. 7B is a sectional view illustrating the step of forming a densified insulating film 122 D according to an embodiment of the present invention.
  • the insulating film 122 may be densified at the plasma atmosphere and thus the densified insulating film 122 D may be formed.
  • a pressure inside the chamber 11 into which the substrate 100 is loaded may be maintained about 0.05 Torr to about 10 Torr.
  • the densified insulating film 122 D that is obtained by processing the insulating film 122 at the plasma atmosphere can have good film properties in insulating characteristic. Particularly, even when the densified insulating film 122 D is formed to have a thin thickness, the densified insulating film 122 D can have good film properties.
  • FIG. 8 is a sectional view illustrating an insulating film including silicon according to another embodiment of the present invention.
  • the insulating film 120 including a plurality of the densified insulating films 122 D and 124 D may be formed by repeating the steps described above with reference to FIGS. 4A to 7B .
  • the insulating film 120 shown in FIG. 7A is relatively thick, the influence of plasma or the second reaction gas 64 on a lower portion of the insulating film 122 is relatively less. Therefore, in order to further enhance the film properties of the insulating film 120 , the insulating film 120 including the densified insulating films 122 D and 124 D may be formed to have a relatively thinner thickness.
  • the insulating film 120 may include three or more densified insulating films. That is, the number of densified insulating films included in the insulating film 120 may be determined in consideration of the desired thickness of the insulating film 120 . In other words, the number of times the steps of FIGS. 4A to 7B are repeated may be determined in consideration of the desired thickness of the insulating film 120 .
  • the method of depositing the cyclic thin film according to an embodiment of the present invention can form the insulating film (for example, a silicon oxide layer or a silicon nitride layer) having excellent film properties and step coverage.
  • the insulating film for example, a silicon oxide layer or a silicon nitride layer
  • the insulating film with a thin thickness can be formed for realizing a highly-integrated semiconductor device and moreover since the insulating film has excellent step coverage, the fine structure can be realized. Also, since the insulating film has good film properties, the method of depositing the cyclic thin film can satisfy performance required by highly-integrated semiconductor devices.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
US13/808,111 2010-08-02 2011-08-01 Method for depositing cyclic thin film Abandoned US20130101752A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2010-0074608 2010-08-02
KR1020100074608A KR101147727B1 (ko) 2010-08-02 2010-08-02 사이클릭 박막 증착 방법
PCT/KR2011/005650 WO2012018211A2 (ko) 2010-08-02 2011-08-01 사이클릭 박막 증착 방법

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US (1) US20130101752A1 (ko)
JP (1) JP2013542581A (ko)
KR (1) KR101147727B1 (ko)
CN (1) CN103026471B (ko)
TW (1) TWI474399B (ko)
WO (1) WO2012018211A2 (ko)

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US20150187560A1 (en) * 2013-12-27 2015-07-02 Eugene Technology Co., Ltd. Cyclic Deposition Method for Thin Film Formation, Semiconductor Manufacturing Method, and Semiconductor Device
KR20160069138A (ko) * 2014-12-08 2016-06-16 주성엔지니어링(주) 기판 처리방법
JP2016535932A (ja) * 2013-11-08 2016-11-17 ユ−ジーン テクノロジー カンパニー．リミテッド サイクリック薄膜蒸着方法及び半導体製造方法及び半導体素子
US9818604B2 (en) 2014-07-15 2017-11-14 Eugene Technology Co., Ltd. Method for depositing insulating film on recessed portion having high aspect ratio

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TW201606116A (zh) * 2014-08-08 2016-02-16 尤金科技有限公司 具低蝕刻率之氧化薄膜之沉積方法及半導體裝置
KR101576639B1 (ko) * 2014-09-18 2015-12-10 주식회사 유진테크 절연막 증착 방법
JP2017139297A (ja) * 2016-02-02 2017-08-10 東京エレクトロン株式会社 成膜方法及び成膜装置
KR102125474B1 (ko) * 2016-12-05 2020-06-24 주식회사 원익아이피에스 박막 증착 방법
WO2019245702A1 (en) * 2018-06-19 2019-12-26 Applied Materials, Inc. Pulsed plasma deposition etch step coverage improvement
KR102671466B1 (ko) * 2018-11-13 2024-06-03 주성엔지니어링(주) 저온 결정질 실리콘 형성방법
KR102860588B1 (ko) * 2020-12-18 2025-09-16 주식회사 원익아이피에스 박막 형성방법 및 그를 포함하는 반도체 소자 제조방법
KR102793351B1 (ko) * 2022-03-29 2025-04-09 주식회사 테스 마스크 처리 방법 및 장치
US20240145230A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Semiconductor cleaning using plasma-free precursors

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KR20120012582A (ko) 2012-02-10
KR101147727B1 (ko) 2012-05-25
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