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US20120139131A1 - Wafer mold material and method for manufacturing semiconductor apparatus - Google Patents

Wafer mold material and method for manufacturing semiconductor apparatus Download PDF

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Publication number
US20120139131A1
US20120139131A1 US13/296,648 US201113296648A US2012139131A1 US 20120139131 A1 US20120139131 A1 US 20120139131A1 US 201113296648 A US201113296648 A US 201113296648A US 2012139131 A1 US2012139131 A1 US 2012139131A1
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United States
Prior art keywords
wafer
mold material
wafer mold
film
resin
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Abandoned
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US13/296,648
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English (en)
Inventor
Michihiro Sugo
Kazunori Kondo
Hideto Kato
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Assigned to SHIN-ETSU CHEMICAL CO., LTD. reassignment SHIN-ETSU CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KATO, HIDETO, KONDO, KAZUNORI, SUGO, MICHIHIRO
Publication of US20120139131A1 publication Critical patent/US20120139131A1/en
Abandoned legal-status Critical Current

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    • H10W74/40—
    • H10W74/473—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C08G59/56—Amines together with other curing agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/18—Homopolymers or copolymers of nitriles
    • C08L33/20—Homopolymers or copolymers of acrylonitrile
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
    • H10W74/016—
    • H10W72/0198—
    • H10W74/00—
    • H10W74/15—
    • H10W90/724—
    • H10W90/734—

Definitions

  • the present invention relates to a wafer mold material, and more particularly to a mold material for collectively molding a wafer having semiconductor devices on a surface thereof by using a resin, and also relates to a method for manufacturing a semiconductor apparatus.
  • a hardening adhesive sheet has been suggested for protection of a chip surface of a wafer level chip size package and sealing of a metal post (Japanese Unexamined Patent Application Publication No. 2004-161886).
  • Japanese Unexamined Patent Application Publication No. 2004-161886 Japanese Unexamined Patent Application Publication No. 2004-1618866.
  • warp of a wafer after molding which has not been recognized as a problem, has become an issue due to an increase in diameter and a reduction in thickness in a recent wafer size, and excellent transference performance is demanded in the hardening adhesive sheet with respect to a thin-film wafer having a large diameter.
  • an epoxy resin with large hardening shrinkage is used for the hardening adhesive sheet, and the warp and the transference performance do not become a problem in a wafer having a thickness of 300 ⁇ m and a diameter of 200 mm (8 inches), but there is a problem that the warp cannot be ignored in a wafer having a larger size. Therefore, a wafer mold material that has the excellent transference performance with respect to a large-diameter thin-film wafer having, e.g., a diameter of 200 mm (8 inches) or a diameter of 300 mm (12 inches) and can suppress the warp of a wafer after molding has been demanded.
  • a wafer mold material for collectively subjecting a wafer having semiconductor devices on a surface thereof to resin molding, wherein the wafer mold material has a resin layer containing a filler and at least any one of an acrylic resin, a silicone resin having an epoxy group, an urethane resin, and a polyimide silicone resin, and the wafer mold material is formed into a film-like shape.
  • the wafer mold material that is used for collectively molding a wafer having semiconductor devices on a surface thereof with a resin has the resin layer containing the filler and at least any one of the acrylic resin, the silicone resin having the epoxy group, the urethane resin, and the polyimide silicon resin, and is formed into a film-like shape
  • the resin layer containing the filler and at least any one of the acrylic resin, the silicone resin having the epoxy group, the urethane resin, and the polyimide silicon resin can be a wafer mold material that has excellent transference performance with respect to a large-diameter thin-film wafer, can provide a flexible hardened material with low-stress properties, and can be preferably used as a mold material in a wafer level package with less warp of a molded wafer.
  • the wafer mold material prefferably has a configuration that a film thickness of the resin layer is 20 microns to 500 microns.
  • the wafer mold material in which the resin layer has the film thickness of 20 microns to 500 microns can be a wafer mold material that has a film thickness with more excellent transference performance and can further suppress warp of a molded wafer since the thickness is not too large, which is desirable.
  • the wafer mold material having a configuration that the resin layer is formed on a support film, and a protective film is provided on the resin layer.
  • the wafer mold material having the configuration that the resin layer is formed on the support film and the protective film is formed on the resin layer as described above, this material is easy to use, which is desirable.
  • the wafer mold material prefferably has a configuration that a storage elastic modulus of the resin layer at 25° C. after hardening is not greater than 1 GPa.
  • the wafer mold material having the configuration that the storage elastic modulus of the hardened resin layer at 25° C. is not greater than 1 GPa can be a wafer mold material that can provide a flexible hardened material with low-stress properties and has less warp of a molded wafer, which is preferable.
  • a method for manufacturing a semiconductor apparatus comprising at least: a transferring step of transferring the film-like wafer mold material according to any one of claims 1 to 4 onto a wafer having semiconductor devices on a surface thereof; a heating step of heating the transferred wafer mold material; and a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having semiconductor devices on the surface thereof having the heated wafer mold material.
  • the method for manufacturing a semiconductor apparatus comprising: the transferring step of transferring the film-like wafer mold material onto the wafer having the semiconductor device on the surface thereof; the heating step of heating the transferred wafer mold material; and a piece forming step of cutting the wafer together with the wafer mold material into each piece, the wafer having the semiconductor device on the surface with the heated wafer mold material, since the wafer mold material can be excellently transferred with respect to a large-diameter thin-film wafer in a wafer level package and the wafer mold material can provide a flexible hardened material with low-stress properties, warp of a molded wafer can be suppressed after the heating step, and each piece of the wafer suppressed from warping can be formed, thereby providing the method that can manufacture a semiconductor apparatus having uniform quality.
  • the wafer mold material that is of the film type instead of the liquid type, enables collective molding (wafer molding) with respect to a wafer having semiconductor devices thereon, has excellent transference performance with respect to a large-diameter thin-film wafer, can provide a flexible hardened material with low-stress properties, and can be preferably used as a mold material in a wafer level package with less warp of a molded wafer, and also provide the method for manufacturing a semiconductor apparatus using this material.
  • FIG. 1 is a cross-sectional view showing an embodiment of a wafer mold material according to the present invention.
  • FIG. 2 is flow diagrams of a method for manufacturing a semiconductor apparatus using the wafer mold material according to the present invention.
  • a wafer mold material and a method for manufacturing a semiconductor apparatus using this material according to the present invention will now be described hereinafter in detail, but the present invention is not restricted thereto.
  • a wafer mold material that has excellent transference performance with respect to a large-diameter thin-film wafer and can provide a flexible hardened material having low-stress properties with less warp of a molded wafer and a method for manufacturing a semiconductor apparatus using this material.
  • a wafer mold material that is used for collectively molding a wafer having semiconductor devices on a surface thereof with a resin, has a resin layer consisting of at least any one of an acrylic resin, a silicone resin having an epoxy group, an urethane resin, and a polyimide silicone resin and a filler, and is formed into a film-like shape can have excellent transference performance with respect to a large-diameter thin-film wafer, that this material can provide a flexible hardened material with low-stress properties, and that this material can be a wafer mold material with less warp of a molded wafer, thereby bringing the present invention to completion.
  • the present inventors have discovered that a method for manufacturing a semiconductor apparatus using the wafer mold material can suppress a short shot involved by an increase in a sealing area since the film-like mold material is used and can excellently transfer the wafer mold material with respect to a large-diameter thin-film wafer and the wafer mold material can provide a flexible hardened material having low-stress properties, that warp of a molded wafer is thereby reduced, and that an adsorption failure when carrying a molded wafer can be suppressed, and that a method for manufacturing a semiconductor apparatus can avoid displacement of, e.g., a cut position when forming each piece, thereby bringing the present invention to completion.
  • the present invention will now be described hereinafter in detail.
  • a wafer mold material for collectively molding a wafer having semiconductor devices on a surface thereof with a resin
  • the wafer mold material formed into a film-like shape according to the present invention has the resin layer containing the filler and at least any one of the acrylic resin, the silicone resin having the epoxy group, the urethane resin, and the polyimide silicone resin.
  • a film thickness of the resin layer As a film thickness of the resin layer, a film thickness of 20 microns to 500 microns is preferable, that of 20 microns to 400 microns is more preferable, and that of 20 microns to 300 microns is particularly preferable.
  • the film thickness is 20 microns to 500 microns, the film thickness with excellent transference performance can be provided, and the wafer mold material that can further suppress warp of a substrate can be preferably obtained after molding since the film thickness is not too large. Therefore, even if a diameter is increased (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size, the warp of the wafer after molding can be further suppressed, and more excellent transference performance can be exercised with respect to the wafer, which is preferable.
  • the film-like wafer mold material according to the present invention can have a support film and a protective film. It is preferable to provide a configuration that the resin layer is formed on the support film and the protective film is provided on the resin layer. In actual use, the wafer mold material including the support film and the protective film in this manner is convenient, which is preferable.
  • a storage elastic modulus of the resin layer at 25° C. after hardening 1 GPa or below is preferable, and 700 MPa or below is more preferable, and 400 MPa or below is particularly preferable.
  • the storage elastic modulus is not greater than 1 GPa, a flexible hardened material having low-stress properties can be provided, and the wafer mold material with less warp of a wafer after molding can be obtained, which is preferable. Therefore, even if a diameter is increased (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size, the warp of the wafer after molding can be further suppressed, which is preferable.
  • Components constituting the resin layer will now be described hereinafter.
  • the acrylic resin according to the present invention is not restricted in particular, an acrylic polymer obtained by copolymerizing three components, i.e., (a) acrylic acid ester and/or methacrylic acid ester, (b) acrylonitrile and/or methacrylonitrile, and (c) unsaturated carboxylic acid is preferable. It is to be noted that this acrylic polymer may be a copolymer containing the components (a) to (c) alone or a copolymer containing any other components.
  • the component (a) is exemplified using the following general formula (1), wherein R′ represents a monovalent hydrocarbon group.
  • the acrylic acid ester and/or the methacrylic acid ester as the component (a) represented by the general formula (1) gives flexibility to the acrylic polymer, and specific compounds of the acrylic acid ester are, e.g., methyl (meth)acrylate, ethyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, isopentyl (meth)acrylate, n-hexyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, n-octyl (meth)acrylate, isononyl (meth)acrylate, n-decyl (meth)acrylate, isodecyl (meth)acrylate, and others.
  • specific compounds of the acrylic acid ester are, e.g., methyl (meth)acrylate, ethyl (meth)acrylate, n-
  • alkylester (meth)acrylate that R 1 represents an alkyl group whose number of carbon atoms is 1 to 12 or especially 1 to 4 is preferable.
  • One type of (meth)acrylate ester as the component (a) may be used alone, or two or more types of (meth)acrylate ester may be used at the same time.
  • the unsaturated carboxylic acid as the component (c) gives adhesion properties and serves as a crosslinking point when heated, a copolymerizable vinyl monomer having a carboxyl group can suffice, and specific compounds are, e.g., an acrylic acid, a methacrylic acid, a crotonic acid, a maleic acid, a fumaric acid, an itaconic acid, and others.
  • the acrylic polymer can be synthesized.
  • an initiator of radical polymerization is not restricted in particular, its examples are 2,2′-azobisisobutyronitrile, 2,2′-azobis(2,4-dimethylvaleronitril), dimethyl 2,2-azobis(2-methylpropionate), benzoyl peroxide, lauroyl peroxide, and the like.
  • a synthetic method a known polymerization method can be used.
  • the film-like wafer mold material having the resin layer containing at least the acrylic resin and the filler can be a wafer mold material that enables collective molding (wafer molding) with respect to a wafer having semiconductor devices, has excellent transference performance even if a diameter is increased (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size, can provide a flexible hardened material having low-stress properties, and can be preferably used as a mold material in a wafer level package with less warp of a wafer after forming (after molding).
  • the silicon resin having an epoxy group according to the present invention is not particularly restricted to, e.g., a linear shape, an annular shape, or a branched shape as long as it is a silicone compound having an epoxy group
  • an example of preferred use is an annular silicone compound having an epoxy group
  • another preferred example is a silicone resin having an epoxy group that can be obtained by hydrosilylation using a chloroplatinic acid containing organohydrogenpolysiloxane and polysiloxane containing an alkenyl group.
  • a silicone resin may be added.
  • a wafer having semiconductor devices formed thereon can be collectively molded (wafer molding), the excellent transference performance can be obtained even though a diameter is increased and (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size, a flexible hardened material having low-stress properties can be provided, and this material can serve as a wafer mold material preferably used as a mold material in a wafer level package with less warp of a wafer after shaping (after molding).
  • urethane resin according to the present invention is not restricted in particular, an example of preferred use is an urethane resin synthetically made from an organic diisocyanate compound and a starting material expressed by the following general formula (2).
  • R 2 represents the same or different types of alkyl groups or aryl groups having carbon numbers 1 to 7, and they are preferably a methyl group, an ethyl group, a propyl group, a phenyl group, a 4-methylphenyl group, and others.
  • X represents a hydrogen group or an amino group.
  • Branched diol or diamine represented by the following general formula (2) functions as a chain length extender in unrethane resin synthesis, wherein R 2 represents the same or different types of alkyl groups or aryl groups having carbon numbers 1 to 7, and X represents a hydrogen group or an amino group.
  • the organic diisocyanate compound is exemplified by 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, m-phenylene diisocyanate, p-phenylene diisocyanate, 4,4′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 2,2′-diphenylmethane diisocyanate, 3,3′-dimethyl-4,4′-biphenylene diisocyanate, 3-3′-dimethoxy-4,4′-biphenylene diisocyanate, 3,3′-dichloro-4,4′-biphenylene diisocyanate, 1,5-naphthalene diisocyanate, 1,5-tetrahydro naphthalene diisocyanate, tetramethylene diisocyanate, 1,6-hexamethylene diisocyanate, dodecamethylene diisocyanate, trimethyl
  • a ratio of the chain length extender and the organic diisocyanate compound when the chain length extender represented by the general formula (2) and the organic diisocyanate compound are reacted to synthesize the urethane resin is 1:1 as an equivalent ratio.
  • a wafer having semiconductor devices formed thereon can be collectively molded (wafer molding), excellent transference performance can be obtained even though a diameter is increased (8 inches, 12 inches, or above) and a thickness is reduced in a wafer size, a flexible hardened material having low-stress properties can be provided, and this mold material can be a wafer mold material that can be preferably used as a mold material in a wafer level package with less warp of a wafer after shaping (after molding).
  • polyimide silicone resin according to the present invention is not restricted in particular, an example of preferred use is a polyimide silicon resin that can be obtained by synthetically making a polyamic acid from dianhydride and a diamine silicone compound such as diaminopolysiloxane and then performing thermal dehydration.
  • the dianhydride used for synthesis of the polyamic acid can be exemplified by 3,3′ and 4,4′-diphenyl sulfone tetracarboxylic dianhydrides, 3,3′ and 4,4′-biphenyl tetracarboxylic dianhydrides, 2,3′ and 3,4′-biphenyl tetracarboxylic dianhydrides, 5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic anhydride, 1,2,3,4-butane tetracarboxylic dianhydride, 3,3′ and 4,4′-benzophenone tetracarboxylic dianhydrides, 4,4′-hexafluoro
  • a wafer having semiconductor devices formed thereon can be collectively molded (wafer molding), excellent transference performance can be obtained even though a diameter is increased (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size, a flexible hardened material having low-stress properties can be provided, and this material can serve as a wafer mold material that can be preferably used as a mold material in a wafer level package with less warp of a wafer after shaping (after molding).
  • the filler according to the present invention is not restricted in particular, examples of preferred use are a silica fine powder, composite silicone rubber fine particles, silicone fine particles, acrylic fine particles, and others, and one type of known material may be solely used, or two types or more of known materials may be combined and used. Furthermore, carbon functional silane may be added for the purpose of improving adhesion to a semiconductor device, a wafer, and others.
  • the silica fine powder there are, e.g., reinforcing silica such as fumed silica or precipitated silica, and crystalline silica such as quartz.
  • the silica fine powder is exemplified by Aerosil R972, R974, and R976 manufactured by Nippon Aerosil Co., Ltd., SE-2050, SC-2050, SE-1050, SO-E1, SO-C1, SO-E2, SO-C2, SO-E3, SO-C3, SO-E5, and SO-05 manufactured by Admatechs Co., Ltd., and Musil120A and Musil130A manufactured by Shin-Etsu Chemical Co., Ltd.
  • composite silicone rubber fine particles for example, KMP-600, KMP-605, and X-52-7030 manufactured by Shin-Etsu Chemical Co., Ltd., and others can be used.
  • silicone fine particles for example, KMP-590 and KMP-701 manufactured by Shin-Etsu Chemical Co., Ltd., and others can be used. Moreover, there are fine particles having an average particle diameter of 0.1 to 10 ⁇ m. An excessive increase in viscosity can be suppressed if the average particle diameter is not lower than 0.1 ⁇ m, and an inferior surface state after sealing can be suppressed when the average particle diameter is not greater than 10 ⁇ m, which is preferable.
  • acrylic fine particles for example, Art-pearl G-800 and SE-006 manufactured by Negami Chemical Industrial Co., Ltd. and others can be used. Further, fine particles having an average'particle diameter of 0.1 to 60 ⁇ m can be also used. An excessive increase in viscosity can be suppressed when the average particle diameter is not lower than 0.1 ⁇ m, and an inferior surface state after sealing can be suppressed when the average particle diameter is not greater than 60 ⁇ m, which is preferable.
  • the filler content included in the resin layer according to the present invention can be 1 to 97% by mass, and the filler content is preferably 5 to 95% by mass or more preferably 10 to 92% by mass.
  • the warp of the resin layer after hardening can be further suppressed when the filler content is not lower than 1% by mass, and an excessive increase in viscosity can be suppressed when the filler content is not greater than 97% by mass, which is preferable.
  • the film-like wafer mold material having the resin layer consisting of at least one of the respective resins and the filler can suppress warp of a wafer after molding even though a diameter is increased (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size and can exercise excellent transference performance with respect to the wafer.
  • the resin layer according to the present invention can contain an epoxy resin, a polyimide resin, a silicone resin, and others.
  • the respective resins that can be contained in the present invention will now be described hereinafter.
  • the epoxy resin that can be contained in the present invention is not restricted in particular, the epoxy resin can be exemplified by, e.g., a phenol novolac-type epoxy resin, a cresol novolac-type epoxy resin, a bisphenol A type epoxy resin such as diglycidyl bisphenol A, a bisphenol F type epoxy resin such as diglycidyl bisphenol F, a triphenylmethane type epoxy resin such as triphenyloipropane triglycidyl ether, a cyclic aliphatic epoxy resin such as 3,4-epoxycyclo hexylmethyl-3,4-epoxycyclo hexane carboxylate, a glycidyl ester based resin such as diglycidyl phthalate, diglycidyl hexahydro phthalate, and dimethyl glycidyl phthalate, and a glycidyl amine based resin such as tetraglycidyl diamin
  • hardening accelerators may be used for the purpose of facilitating reaction of the epoxy resin or the purpose of facilitating reaction of an epoxy group when a compound having the epoxy group is contained in the resin layer.
  • the hardening accelerators are an organic phosphine compound such as triphenylphosphine or tricyclohexylphosphine, an amino compound such as trimethyl hexamethylene diamine, diaminodiphenylmethane, 2-(dimethyl aminomethyl)phenol, 2,4,6-tris(dimethyl aminomethyl)phenol, or triethanolamine, and an imidazole compound such as 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, or 2-phenyl-4,5-dihydroxy methylimidazole.
  • polyimide resin that can be contained in the present invention is not restricted in particular, an example of a preferably adopted polyimide resin is a polyimide resin obtained by synthetically making a polyamic acid from dianhydride and a diamine compound and then performing thermal dehydration.
  • the dianhydride used for synthesis of the polyamic acid is exemplified by 3,3′ and 4,4′-diphenylsulphone tetracarboxylic dianhydrides, 3,3′ and 4,4′-biphenyl tetracarboxylic dianhydrides, 2,3′ and 3,4′-biphenyl tetracarboxylic dianhydrides, 5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic anhydride, 1,2,3,4-butane tetracarboxylic dianhydride, 3,3′ and 4,4′-benzophenone tetracarboxylic dianhydrides, 4,4′-hexafluoropropylid
  • the diamine compound used for synthesis of the polyamic acid is exemplified by diamine having a phenol group such as 3,3′-diamino-4,4′-dihydroxybiphenyl, 2,2′-diamino-4,4′-dihydroxybiphenyl, 2,2′-bis(4-amino-3-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 9,9-bis(3-amino-4-hydroxyphenyl)fluorine, 2,2′-methylenebis[6-(4-amino-3,5-dimethylbenzil)-4-methyl]phenol, 3,3′-diamino-4,4′-dihydroxy diphenyle ether, or 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, 4,4′-diaminobenzanilide, 4,4′-diaminodiphenylether, 3,4
  • silicone resin that can be contained in the present invention is not restricted in particular, a silicone resin obtained by hydrosilylation using a chloroplatinic acid including organohydrogenpolysiloxane and polysiloxane containing an alkenyl group is desirable as an example of preferably adopted silicone resin. At this time, a silicone resin may be added.
  • organic solvent can be appropriately contained in the resin layer according to the present invention.
  • the organic solvent is not restricted in particular, there are, e.g., methyl ethyl ketone, cyclohexanone, cyclopentanone, toluene, and others.
  • the wafer mold material formed in the film-like shape according to the present invention can have a support film.
  • the support film may be a single film or a multilayer film obtained by laminating a plurality of polymer films.
  • a material there is a synthetic resin film made of polyethylene, polypropylene, polycarbonate, or polyethylene terephthalate, and polyethylene terephthalate having appropriate flexibility, mechanical strength, and heat resistance is preferable.
  • a corona treatment or application of a delaminating agent may be adopted as such support films.
  • support films commercially available products can be used, and there are, e.g., Cerapeel WZ(RX) and Cerapeel BX8(R) (manufactured by Toray Advanced Film Co., Ltd.), E7302 and E7304 (manufactured by Toyobo Co., Ltd.), Purex G31 and Purex G71T1 (manufactured by Tijin DuPont Films Japan Limited), PET38 ⁇ 1-A3, PET38 ⁇ 1-V8, and PET38 ⁇ 1-X08 (manufactured by Nippa Co., Ltd.).
  • Cerapeel WZ(RX) and Cerapeel BX8(R) manufactured by Toray Advanced Film Co., Ltd.
  • E7302 and E7304 manufactured by Toyobo Co., Ltd.
  • Purex G31 and Purex G71T1 manufactured by Tijin DuPont Films Japan Limited
  • the wafer mold material formed in a film-like shape according to the present invention can have a protective film.
  • a protective film as the above-described support film
  • polyethylene terephthalate and polyethylene having appropriate flexibility are preferable.
  • commercially available products can be used, polyethylene terephthalate has been already exemplified above, and polyethylene can be exemplified by GF-8 (manufactured by Tamapoly Co., Ltd.) and PE film 0 type (manufactured by Nippa Co., Ltd.).
  • a thickness of each of the support film and the protective film is preferably 10 to 100 ⁇ m and more preferably 25 to 50 ⁇ m in terms of stability in manufacture of the wafer mold material and prevention of peculiar winding which is so-called prevention of a curl with respect to a winding core.
  • the wafer mold material according to the present invention is a wafer mold material that is for collectively molding a wafer having semiconductor devices on a surface thereof with a resin, has the resin layer containing a filler and at least any one of an acrylic resin, a silicone resin having an epoxy group, an urethane resin, and a polyimide silicone resin and a filler, and is formed into a film-like shape.
  • FIG. 1 shows an embodiment of the wafer mold material according to the present invention.
  • the wafer mold material 10 formed into a film-like shape according to the present invention can have the support film 1 and the protective film 3 besides the resin layer 2 .
  • Such a wafer mold material can suppress warp of a wafer after molding and exercise excellent transference performance with respect to the wafer even though a diameter is increased (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size.
  • the wafer that is collectively subjected to resin molding using the wafer mold material according to the present invention and has semiconductor devices on a surface thereof may be a wafer having semiconductor device (chips) mounted on a surface thereof or a semiconductor wafer having semiconductor devices fabricated on a surface thereof.
  • the wafer mold material according to the present invention is formed into a film-like shape.
  • a resin does not have to be flowed in. Therefore, it is possible to eliminate problems, i.e., wire deformation and a short shot that can possibly occur in transfer molding, a difficulty in control over the molding range that can occur in a compression molding method, and optimization of flowability and physical properties of a liquid sealing resin.
  • the film-like wafer mold material according to the present invention can be manufactured by, e.g., forming the resin layer on a support film and arranging a protective film to be appressed against the upper side of the resin layer.
  • the present invention provides a method for manufacturing a semiconductor apparatus, comprising at least: a transferring step of transferring the film-like wafer mold material onto a wafer having semiconductor devices on a surface thereof; a heating step of heating the transferred wafer mold material; and a piece forming step of forming each piece by cutting together with the wafer mold material the wafer having the semiconductor devices on the surface having the heated wafer mold material.
  • the transferring step according to the present invention is a step of transferring the film-like wafer mold material 10 to a wafer 7 having semiconductor devices 4 on a surface thereof ( FIGS. 2(A) to (D)).
  • the protective film 3 is removed from the film-like wafer mold material 10 to expose the resin layer 2 ( FIGS. 2(A) and (B)).
  • the resin layer 2 of the wafer mold material is arranged to be appressed against the wafer 7 having the semiconductor devices 4 on the surface thereof through copper posts 5 and an underfill material 6 ( FIG. 2(C) ).
  • the wafer mold material (the resin layer 2 ) is transferred onto the surface of the wafer 7 having the semiconductor devices 4 by delaminating the support film 1 ( FIG. 2(D) ).
  • the wafer mold material 10 can be excellently transferred with respect to the wafer 7 having an increased diameter and a reduced film thickness, a short shot involved by an increase in a mold area can be suppressed. Moreover, at this transferring step, the resin layer 2 of the wafer mold material can be transferred without producing a gap with respect to a shape of each semiconductor device 4 on the wafer 7 .
  • the wafer onto which the wafer mold material is transferred may be a wafer that has semiconductor devices 4 mounted on the surface thereof through the copper post 5 and the underfill 6 and has semiconductor bumps 8 on a back surface or a semiconductor wafer having semiconductor devices fabricated on a surface thereof as shown in FIG. 2 .
  • the heating step according to the present invention is a step of heating the transferred wafer mold material (the resin layer 2 ).
  • the wafer mold material (the resin layer 2 ) is hardened when heated, thereby collectively molding the wafer 7 having the semiconductor devices 4 on the surface thereof.
  • warp is suppressed even though this wafer is a wafer having an increased diameter and a reduced film thickness ( FIG. 2(E) ).
  • the piece forming step according to the present invention is a step of forming each piece by cutting together with the wafer mold material (the resin layer 2 ′ after hardening) the wafer 7 having the semiconductor devices 4 with the heated wafer mold material (the resin layer 2 ′ after hardening) by using the dicer (not shown).
  • the wafer 7 suppressed from warping even after molding can be excellently formed into pieces.
  • it is possible to manufacture a semiconductor apparatus 9 formed of a wafer 7 ′ formed as a piece and molded with a hardened resin layer 2 ′′ formed as a piece ( FIG. 2(F) ).
  • the resin layer can be excellently transferred with respect to the wafer even though a diameter is increased (8 inches, 12 inches, or above) and a film thickness is reduced in a wafer size, thereby suppressing the warp of the wafer after molding. Therefore, there can be obtained a semiconductor apparatus manufacturing method that enables manufacture of a semiconductor apparatus without an adsorption failure at the time of carrying a wafer and an inconvenience such as displacement of a cut position in the piece forming step.
  • the wafer mold material according to the present invention will be first described.
  • a resin composition (1) consisting of a silicone resin having an epoxy group and a filler.
  • a die coater as a film coater and a polyethylene terephthalate film (a thickness: 38 ⁇ m) as a support film were used to coat the support film with the resin composition (I). Then, this material was allowed to pass through for 5 minutes a circulating hot air oven (a length: 4 m) set to 100° C. to form a resin layer having a film thickness of 100 ⁇ m on the support film. Subsequently, a polyethylene film (a thickness: 50 ⁇ m) was used as a protective film, and the protective film was applied to the resin layer using a laminated roll with a pressure of 1 MPa, thereby fabricating a wafer mold material (Example 1).
  • the resin composition (II) was used to fabricate a film-like wafer mold material (Example 2) like Example 1.
  • a methylpolysiloxane resin that consists of 1.1 mol of [(CH 3 ) 3 SiO 1/2 ] unit and 1 mol of [SiO 4/2 ] unit and contains 0.07 mol of a hydroxyl group per 100 gram and 50 parts of crude-rubber like dimethylpolysiloxane that has a polymerization degree of 2,000 and is terminated by a hydroxyl group were dissolved in 100 parts of toluene, 0.5 part of ammonia water having concentration of 28% was added to this solution, and agitation was performed at a room temperature for 16 hours to carry out condensation reaction.
  • this reaction solution was heated to 120 to 130° C., condensation water was removed by azeotropic dehydration, the solvent was volatilized 150° C. for 30 minutes to obtain a nonvolatile component, and toluene was added so that this nonvolatile component can be 40% by mass, thereby synthetically making a silicone partial condensate-I solution.
  • a silicone resin having an epoxy group represented by the following structural formula (5) 100 parts of the silicone partial condensate-I solution, 3 parts of a silicone resin having an epoxy group represented by the following structural formula (5), 2 parts of an organopolysiloxane compound having a silicon atom-bound hydrogen atom represented by the following structural formula (6), 20 parts by mass of SE-2050 (manufactured by Admatechs Co., Ltd.) as a filler, a catalytic amount of a 2-ethylhexanol modified solution of a chloroplatinic acid that provides 10 ppm of a platinum amount, and 0.05 part of 3-methyl-1-butyne-3-ol as a reaction inhibitor were mixed to prepare a resin composition (III) consisting of the silicon resin having the epoxy group and the filler.
  • a resin composition (III) consisting of the silicon resin having the epoxy group and the filler.
  • the resin composition (III) was used to fabricate a film-like wafer mold material (Example 3) like Example 1.
  • Example 4 50 parts of the acrylic resin, 10 parts by mass of bisphenol A diglycidyl ether, 0.5 parts by mass of 2-ethylimidazole, 20 parts by mass of SE-2050 (manufactured by Admatechs Co., Ltd.) as a filler, and cyclopentanone as a solvent were added so that concentration can be 50%, thereby fabricating a resin composition (IV) consisting of the acrylic resin and the filler.
  • the resin composition (IV) was used to fabricate a film-like wafer mold material (Example 4) like Example 1.
  • terminal alcohol modified silicone (X-22-170B manufactured by Shin-Etsu Chemical Co., Ltd.) and 50 parts of 2,4-tolylenediisocyanate were reacted to obtain an urethane resin.
  • 50 parts of the urethane resin 10 parts by mass of bisphenol A diglycidyl ether, 0.5 part by mass of 2-ethylimidazole, 20 parts by mass of SE-2050 (manufactured by Admatechs Co., Ltd.) as a filler, and cyclopentanone as a solvent were added so that concentration can be 500, thereby fabricating a resin composition (V) consisting of the urethane resin and the filler.
  • the resin composition (V) was used to fabricate a film-like wafer mold material (Example 5) like Example 1.
  • a reaction liquid was cooled to an ordinary temperature and taken out of the flask, a large amount of methanol was added to carry out precipitation, filtration was effected, and then washing and drying were performed to obtain an epoxidized stylene-butadiene-stylene block copolymer having an epoxy equivalent of 520.
  • the epoxidized stylene-butadiene-stylene block copolymer was mixed with the following components to prepare a resin composition (VI) having the epoxy resin.
  • the resin composition (VI) was used to fabricate a film-like wafer mold material (Comparative Example 1) like Example 1.
  • the thus obtained film-like wafer mold material according to each of Examples 1 to 5 and Comparative Example 1 was transferred onto a wafer having a semiconductor device on a surface thereof (the transferring step), the transferred wafer mold material was heated (the heating step), and the wafer was cut together with the wafer mold material to be formed into each piece (the piece forming step), thereby manufacturing a semiconductor apparatus.
  • the transferring step the transferred wafer mold material was heated (the heating step), and the wafer was cut together with the wafer mold material to be formed into each piece (the piece forming step), thereby manufacturing a semiconductor apparatus.
  • a silicon wafer that has a thickness of 100 ⁇ m and a diameter of 300 mm (12 inches) and has a semiconductor device on a surface thereof was prepared.
  • a protective film was delaminated from each of the six types of wafer mold materials, the inside of a vacuum chamber was set to a vacuum degree of 100 Pa and a resin layer on the support film was closely attached to silicon wafer at 100° C. using a vacuum laminator (manufactured by Takatori Corporation, TEAM-300M). After again setting an ordinary pressure, the silicon wafer was cooled to 25° C. and taken out from the vacuum laminator, the support film was delaminated, and the wafer mold material was transferred onto the wafer. At this time, transference properties of each wafer mold material were visually evaluated. In the evaluation of the transference properties, successful transference without generation of a gap was evaluated as a good result, and occurrence of a short shot was evaluated as a failure result. Table 1 shows a result.
  • the wafer having the wafer mold material transferred thereto was heated at 150° C. for 1 hour to harden the wafer mold material.
  • a storage elastic modulus (MPa) and a wafer warp amount (mm) of each wafer mold material after molding were measured. Table 1 shows a result.
  • the wafer was cut together with the wafer mold material by using a dicer (manufactured by DISCO, DAD361) to be formed into respective pieces. After forming the respective pieces, dicing properties were evaluated. Whether an abnormality such as cracks of a chip (a semiconductor apparatus) is present was visually confirmed in evaluation of dicing properties, an excellent result was obtained when no abnormality was found, and a failure result was obtained when the abnormality was found. Table 1 shows a result.
  • Example Example Example Comparative Item 1 2 3 4 5 Example 1 Transference Excellent Excellent Excellent Excellent Excellent properties Storage 320 380 240 320 380 1200 elastic modulus (MPa) Wafer warp ⁇ 1 ⁇ 1 ⁇ 1 ⁇ 1 ⁇ 1 6 amount (mm) Dicing Excellent Excellent Excellent Excellent Excellent Failure properties
  • Comparative Example 1 has excellent transference properties, a high storage elastic modulus, a high wafer warp amount, and poor dicing properties.
  • the film obtained by the present invention has excellent transference properties, a low storage elastic modulus, a low wafer warp amount, and excellent dicing properties.

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130119538A1 (en) * 2011-11-16 2013-05-16 Texas Instruments Incorporated Wafer level chip size package
US20140106511A1 (en) * 2012-03-06 2014-04-17 Triquint Semiconductor, Inc. Flip-chip packaging techniques and configurations
CN105210184A (zh) * 2013-05-23 2015-12-30 日东电工株式会社 电子部件装置的制造方法、层叠片、以及电子部件装置
CN105229780A (zh) * 2013-05-23 2016-01-06 日东电工株式会社 电子部件装置的制造方法
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CN105453254A (zh) * 2013-08-09 2016-03-30 日东电工株式会社 带有隔膜的电子器件密封用树脂片组及带有隔膜的电子器件密封用树脂片的选择方法
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EP3242321A1 (en) * 2016-05-02 2017-11-08 Shin-Etsu Chemical Co., Ltd. Method for encapsulating a base material with a large-area semiconductor element
US10550287B2 (en) 2015-12-25 2020-02-04 Shin-Etsu Chemical Co., Ltd. Solvent-free silicone-modified polyimide resin composition
US11274218B2 (en) * 2017-12-11 2022-03-15 Lg Chem, Ltd. Thermosetting resin composition for coating metal thin film and metal laminate using the same
US12134697B2 (en) 2019-12-27 2024-11-05 Dow Toray Co., Ltd. Curable hot-melt silicone composition, cured material thereof, and laminate containing curable hot-melt silicone composition or cured material thereof
US12172357B2 (en) 2018-12-27 2024-12-24 Dow Toray Co., Ltd. Method for producing curable silicone sheet having hot melt properties
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US12173157B2 (en) 2018-12-27 2024-12-24 Dow Toray Co., Ltd. Curable silicone composition, cured product thereof, and method for producing same
US12215226B2 (en) 2018-10-30 2025-02-04 Dow Toray Co., Ltd. Curable reactive silicone composition, cured product thereof and uses of composition and cured product
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US12384941B2 (en) 2019-03-29 2025-08-12 Dow Toray Co., Ltd. Curable silicone composition, cured product of same, and method for manufacturing same
US12480027B2 (en) 2019-03-29 2025-11-25 Dow Toray Co., Ltd. Curable silicone composition, cured product of same, and method for producing same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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JP5769674B2 (ja) * 2012-08-08 2015-08-26 日東電工株式会社 電子部品封止用樹脂シート、樹脂封止型半導体装置、及び樹脂封止型半導体装置の製造方法
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JP2015053469A (ja) * 2013-08-07 2015-03-19 日東電工株式会社 半導体パッケージの製造方法
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JP7115469B2 (ja) 2017-03-31 2022-08-09 昭和電工マテリアルズ株式会社 封止フィルム、電子部品装置の製造方法及び電子部品装置
CN114539535B (zh) * 2020-11-25 2023-04-07 中蓝晨光化工研究设计院有限公司 一种含酰胺基单组份室温固化弹塑性硅树脂及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151327A (en) * 1990-03-15 1992-09-29 Nitto Denko Corporation Adhesive sheet for reinforcing thin rigid plates
US20020016438A1 (en) * 2000-06-29 2002-02-07 Shin-Etsu Chemical Co., Ltd. Polyimide silicone resin, process for its production, and polyimide silicone resin composition
US20020188069A1 (en) * 2001-05-08 2002-12-12 Michihiro Sugo Solventless polyimide silicone resin compositions
US20060194064A1 (en) * 2002-03-01 2006-08-31 Xiao Allison Y Underfill encapsulant for wafer packaging and method for its application
US20080039555A1 (en) * 2006-08-10 2008-02-14 Michel Ruyters Thermally conductive material
US20080308225A1 (en) * 2007-06-15 2008-12-18 Shin-Etsu Chemical Co., Ltd. Adhesive composition suitable to be applied by screen printing
US7560307B2 (en) * 2000-03-06 2009-07-14 Hitachi Chemical Company, Ltd. Resin composition, heat-resistant resin paste and semiconductor device using these and method of preparing the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124258A (ja) * 1984-07-12 1986-02-01 Fujitsu Ltd 電子部品の外装構造
JP3604988B2 (ja) * 2000-02-14 2004-12-22 シャープ株式会社 半導体装置およびその製造方法
JP2002076203A (ja) * 2000-08-31 2002-03-15 Hitachi Chem Co Ltd ウエハレベルチップサイズパッケージ用の封止用成形材料及びウエハレベルチップサイズパッケージ
JP3998564B2 (ja) 2002-11-13 2007-10-31 株式会社巴川製紙所 半導体封止用硬化性接着剤組成物および接着シート
TWI304835B (en) * 2003-06-10 2009-01-01 Hitachi Chemical Co Ltd Film adhesive and manufacturing method thereof,adhesive sheet and semiconductor device
JP4225162B2 (ja) * 2003-08-18 2009-02-18 日立化成工業株式会社 封止用フィルム
JP5046366B2 (ja) * 2005-10-20 2012-10-10 信越化学工業株式会社 接着剤組成物及び該接着剤からなる接着層を備えたシート
US7524775B2 (en) * 2006-07-13 2009-04-28 Infineon Technologies Ag Method for producing a dielectric layer for an electronic component
JP2008177432A (ja) * 2007-01-19 2008-07-31 Kyocera Chemical Corp 封止用熱硬化型樹脂シート、電子部品装置及び電子部品装置の製造方法
TWI345276B (en) * 2007-12-20 2011-07-11 Chipmos Technologies Inc Dice rearrangement package structure using layout process to form a compliant configuration
KR100963675B1 (ko) * 2008-03-14 2010-06-15 제일모직주식회사 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법
KR101485612B1 (ko) * 2008-04-25 2015-01-22 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 웨이퍼용 보호 필름
EP2280044A4 (en) * 2008-05-21 2015-08-19 Nagase Chemtex Corp EPOXY RESIN COMPOSITION FOR THE PACKAGING OF AN ELECTRONIC COMPONENT
EP2410001A4 (en) * 2009-03-17 2014-03-12 Nippon Soda Co Inclusion complex, hardening agent, hardening accelerator, epoxy resin composition and epoxy resin composition for encapsulating semiconducting conductors
TW201037035A (en) * 2009-04-01 2010-10-16 Microcosm Technology Co Ltd Polyimide film having sheltering property and application thereof and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151327A (en) * 1990-03-15 1992-09-29 Nitto Denko Corporation Adhesive sheet for reinforcing thin rigid plates
US7560307B2 (en) * 2000-03-06 2009-07-14 Hitachi Chemical Company, Ltd. Resin composition, heat-resistant resin paste and semiconductor device using these and method of preparing the same
US20020016438A1 (en) * 2000-06-29 2002-02-07 Shin-Etsu Chemical Co., Ltd. Polyimide silicone resin, process for its production, and polyimide silicone resin composition
US20020188069A1 (en) * 2001-05-08 2002-12-12 Michihiro Sugo Solventless polyimide silicone resin compositions
US20060194064A1 (en) * 2002-03-01 2006-08-31 Xiao Allison Y Underfill encapsulant for wafer packaging and method for its application
US20080039555A1 (en) * 2006-08-10 2008-02-14 Michel Ruyters Thermally conductive material
US20080308225A1 (en) * 2007-06-15 2008-12-18 Shin-Etsu Chemical Co., Ltd. Adhesive composition suitable to be applied by screen printing

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130119538A1 (en) * 2011-11-16 2013-05-16 Texas Instruments Incorporated Wafer level chip size package
US20140106511A1 (en) * 2012-03-06 2014-04-17 Triquint Semiconductor, Inc. Flip-chip packaging techniques and configurations
CN105210184A (zh) * 2013-05-23 2015-12-30 日东电工株式会社 电子部件装置的制造方法、层叠片、以及电子部件装置
CN105229780A (zh) * 2013-05-23 2016-01-06 日东电工株式会社 电子部件装置的制造方法
CN105431937A (zh) * 2013-08-01 2016-03-23 日东电工株式会社 密封用片、以及使用了该密封用片的半导体装置的制造方法
CN105453254A (zh) * 2013-08-09 2016-03-30 日东电工株式会社 带有隔膜的电子器件密封用树脂片组及带有隔膜的电子器件密封用树脂片的选择方法
US10128131B2 (en) 2013-11-21 2018-11-13 Nitto Denko Corporation Sealing sheet with separators on both surfaces, and method for manufacturing semiconductor device
CN105745750A (zh) * 2013-11-21 2016-07-06 日东电工株式会社 双面带有隔片的密封用片、以及半导体装置的制造方法
CN105874582A (zh) * 2013-12-26 2016-08-17 日东电工株式会社 双面带有隔片的密封用片、以及半导体装置的制造方法
US10550287B2 (en) 2015-12-25 2020-02-04 Shin-Etsu Chemical Co., Ltd. Solvent-free silicone-modified polyimide resin composition
EP3242321A1 (en) * 2016-05-02 2017-11-08 Shin-Etsu Chemical Co., Ltd. Method for encapsulating a base material with a large-area semiconductor element
US9972507B2 (en) 2016-05-02 2018-05-15 Shin-Etsu Chemical Co., Ltd. Method for encapsulating large-area semiconductor element-mounted base material
US11274218B2 (en) * 2017-12-11 2022-03-15 Lg Chem, Ltd. Thermosetting resin composition for coating metal thin film and metal laminate using the same
US12215226B2 (en) 2018-10-30 2025-02-04 Dow Toray Co., Ltd. Curable reactive silicone composition, cured product thereof and uses of composition and cured product
US12173157B2 (en) 2018-12-27 2024-12-24 Dow Toray Co., Ltd. Curable silicone composition, cured product thereof, and method for producing same
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US12258496B2 (en) 2019-03-29 2025-03-25 Dow Toray Co., Ltd. Curable silicone composition, cured product of same and method for producing same
US12384941B2 (en) 2019-03-29 2025-08-12 Dow Toray Co., Ltd. Curable silicone composition, cured product of same, and method for manufacturing same
US12480027B2 (en) 2019-03-29 2025-11-25 Dow Toray Co., Ltd. Curable silicone composition, cured product of same, and method for producing same
US12134697B2 (en) 2019-12-27 2024-11-05 Dow Toray Co., Ltd. Curable hot-melt silicone composition, cured material thereof, and laminate containing curable hot-melt silicone composition or cured material thereof

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