US20110309393A1 - Packaged leds with phosphor films, and associated systems and methods - Google Patents
Packaged leds with phosphor films, and associated systems and methods Download PDFInfo
- Publication number
- US20110309393A1 US20110309393A1 US12/819,795 US81979510A US2011309393A1 US 20110309393 A1 US20110309393 A1 US 20110309393A1 US 81979510 A US81979510 A US 81979510A US 2011309393 A1 US2011309393 A1 US 2011309393A1
- Authority
- US
- United States
- Prior art keywords
- led
- phosphor
- film
- phosphor film
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H10W90/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H10W72/07554—
-
- H10W72/5473—
-
- H10W74/00—
-
- H10W90/754—
Definitions
- the present disclosure is directed generally to packaged light emitting diodes (LEDs) with phosphor films, and associated systems and methods.
- LEDs light emitting diodes
- LEDs are increasingly in demand for many purposes because such devices efficiently produce high-intensity, high-quality light.
- mobile phones, personal digital assistants, digital cameras, MP3 players, and other portable devices use LEDs or other solid state lighting devices to produce white light for background illumination.
- LEDs may also be used in applications other than electronic devices, for example, in ceiling panels, desk lamps, refrigerator lights, table lamps, streets lights, automobile headlights, and other instances in which lighting is necessary or desirable.
- LEDs One challenge associated with producing LEDs is containing production costs in a manner that allows LEDs to be priced competitively with other more conventional lighting sources. Because a significant fraction of the cost of an LED is attributed to the process for making the LED, manufacturers have attempted to reduce processing costs.
- One aspect of the processing costs relates to the use of phosphor in a packaged LED system. In particular, typical LEDs emit blue light, while many applications require or at least benefit from softer colored or white light. Accordingly, manufacturers coat such LEDs with a phosphor that absorbs a portion of the emitted blue light and re-emits the light as yellow light, producing a composite light emission that is white or at least approximately white.
- FIG. 1 is a partially schematic, cross-sectional side view of components of an LED system configured in accordance with an embodiment of the disclosure.
- FIG. 2 is a partially schematic, cross-sectional side view of the components shown in FIG. 1 , joined to form a package in accordance with an embodiment of the disclosure.
- FIG. 3A is a flow diagram illustrating a process for forming a phosphor film in accordance with an embodiment of the disclosure.
- FIG. 3B is a flow diagram illustrating a process for forming a multi-layer phosphor film in accordance with another embodiment of the disclosure.
- FIG. 4 is a partially schematic, cross-sectional exploded side view of a package having a multi-layer phosphor film in accordance with an embodiment of the disclosure.
- FIG. 5 is a partially schematic illustration of multiple methods for forming LED packages in accordance with further embodiments of the disclosure.
- aspects of the present disclosure are directed generally to packaged light emitting diodes (LEDs) with phosphor films, and associated systems and methods. Specific details of several embodiments of the disclosure are described below with reference to particular LEDs to provide a thorough understanding of these embodiments. In other embodiments, aspects of the present disclosure can be used in conjunction with LEDs having other configurations. Several details describing structures or processees that are well-known and often associated with LEDs, but that may unnecessarily obscure some significant aspects of the present disclosure are not set forth in the following description for purposes of clarity. Moreover, although the following disclosure sets forth several embodiments of different aspects of the invention, several other embodiments can have different configurations, different components, and/or different processees or steps than those described in this section. Accordingly, the invention may have other embodiments with additional elements, and/or without several of the elements described below with reference to FIGS. 1-5 .
- FIG. 1 is a partially schematic, cross-sectional side view of an LED system 100 that includes components that are combined to form a package 101 in accordance with an embodiment of the disclosure. These components can include a support member 140 carrying an LED 130 , and a phosphor film 110 optionally supported by a carrier 120 . The phosphor film 110 is conformal, and is attached to the LED 130 and the support member 140 after the LED 130 is connected to the support member 140 with wire bonds 104 . Further details of this arrangement and associated processes are described below.
- the support member 140 is formed from a ceramic or other suitable substrate material, and has a first (e.g., upwardly facing) surface 143 a and a second (e.g., downwardly facing) surface 143 b .
- Each support member 140 further includes first and second support member bond sites 141 a , 141 b (e.g., bond pads) that provide for electrical communication to and/or from the LED 130 .
- each of the support member bond sites 141 a , 141 b is connected to corresponding package bond site 102 a , 102 b by a corresponding via 142 or other electrically conductive structure.
- the first and second packages bond sites 102 a , 102 b are accessible from outside the package 101 to facilitate physical and electrical connections between the package 101 and external devices (not shown in FIG. 1 ).
- the support member 140 carries the LED 130 , e.g., at the first support member surface 143 a .
- the LED 130 can include a first LED bond site 131 a and a second LED bond site 131 b .
- the second LED bond site 131 b can face toward and be electrically connected directly to the second support member bond site 141 b .
- the second LED bond site 131 b can face away from the second support member bond site 141 b , and can be connected to the second support member bond site 141 b with a wire bond.
- the first LED bond site 131 a can be electrically connected to the first support member bond site 141 a with a wire bond 104 .
- the package 101 can also include an electrostatic discharge (ESD) die 103 that provides protection for the LED 130 and that is also electrically connected to the first support member bond site 141 a with a wire bond 104 , and to the second support member bond site 141 b with a suitable backside surface-to-surface connection.
- ESD electrostatic discharge
- the ESD die 103 can be omitted.
- the LED 130 has an upwardly facing active surface 132 through which light (e.g., blue light) is emitted.
- the phosphor film 110 is positioned over the active surface 132 to alter the characteristics of the light directed away from the package 101 .
- the phosphor film 110 can include a matrix material 111 having a distribution of phosphor elements 112 .
- the phosphor elements 112 receive light from the LED 130 and emit the light at a different wavelength, for example, to produce a composite emitted light that is white rather than blue.
- the phosphor film 110 is formed from a self-supporting, shape-retaining yet pliant or conformable material.
- the matrix material 111 of the phosphor film 110 can include a partially cured (e.g., b-stage) epoxy material that has enough strength to be handled when in film form, but which can conform to the LED and associated features when heated.
- the phosphor film 110 is brought into contact with the LED 130 and the support member 140 , as indicated by arrows C, and heated to form an assembled unit described later with reference to FIG. 2 .
- the matrix material 111 can soften due to the heat, allowing the phosphor film 110 to conform to the LED 130 and to the wire bonds 104 that connect the LED 130 to the support member 140 .
- the matrix material 111 is sufficiently compliant at elevated temperatures to conform, flow or otherwise deform around the wire bonds 104 , without displacing, distorting, disturbing, or otherwise changing the location and/or shape of the wire bonds 104 . Accordingly, the LED 130 can be wire bonded to the support member 140 prior to adding the phosphor film 110 , without the phosphor film 110 disturbing the integrity of the wire bonds 104 .
- the matrix material 111 is also selected to be at least partially (and in particular embodiments, completely) transparent to radiation emitted by the LED 130 and the film 110 .
- the matrix material 111 is selected to be generally transparent to both wavelengths.
- the film 110 can include multiple phosphor elements 112 with different phosphor elements selected to emit light at corresponding different wavelengths.
- the package 101 can include multiple film layers 110 , each having phosphor elements 112 that emit light at a corresponding different wavelength.
- the matrix material 111 can be selected to be at least partially (and in particular embodiments, completely) transparent to one or more (e.g., all) the emitted wavelengths.
- the phosphor film 110 is strong enough to withstand routine microelectronic device handling techniques as a standalone unit.
- the phosphor film 110 can be attached to the carrier 120 , which can be rigid or semi-rigid so as to provide additional support to the phosphor film during the manufacturing process.
- the phosphor film 110 can include a first surface 113 a facing toward the LED 130 and the support member 140 , and a second surface 113 b facing opposite from the first surface 113 a and attached to the carrier 120 .
- the carrier 120 is typically stiffer and/or more rigid than the phosphor film 120 to provide additional support.
- the carrier 120 can include a generally flat, generally rigid, and generally transparent material that provides support to the phosphor film 110 without affecting the transmission of light away from the LED 130 .
- the carrier 120 can include a flat layer of glass that is transparent to radiation (e.g., light, and in particular embodiments, visible light).
- the carrier 120 can include features that do affect the light emitted by the LED 130 .
- the carrier 120 can include a lens portion 121 that redirects light emitted from the LED 130 .
- the carrier 120 can include additional phosphor elements 112 beyond those present in the phosphor film 110 .
- the concentration of phosphor elements in the carrier 120 is generally less than the concentration of phosphor elements 112 in the phosphor film 110 .
- the carrier 120 can be fixedly attached to the film 110 , and can form a permanent part of the package 101 . In other embodiments, the carrier can be released from the film 110 after the film 110 is attached to the LED 130 and the support member 140 .
- FIG. 2 illustrates the package 101 after the phosphor film 110 has been brought into contact with the LED 130 and the substrate 140 .
- heat 105 is applied to the elements of the package 101 , allowing the phosphor film 110 to soften and conform to the wire bonds 104 , the LED 130 , the ESD die 103 (if present), and/or other features that may project from or be recessed from the first surface 143 a of the substrate 140 .
- the phosphor film 110 can completely surround, encapsulate, and/or otherwise accommodate the wire bonds 104 at the first LED bond site 131 a , the first support member bond site 141 a , and/or locations of the wire bond 104 between the two bond sites 113 a , 141 a .
- the entire package 101 can then be fully cured to harden the phosphor film 110 in the shape and position shown in FIG. 2 , with the phosphor film 110 adhered to the LED 130 and the substrate 140 .
- FIG. 3A is a schematic block diagram illustrating a process 300 a for forming a phosphor film 110 in accordance with an embodiment of the disclosure.
- a matrix material 111 e.g., a softened, liquid, or otherwise flowable or malleable epoxy or other material
- the phosphor elements 112 can be uniformly distributed in the matrix material 111 .
- the mixture 114 can be shaped or otherwise manipulated to produce the phosphor film 110 in accordance with any of a variety of suitable techniques.
- Such techniques can include a spin-on process, a squeegee process, or another process that produces a phosphor film 110 having a uniform thickness.
- the phosphor film 110 can then be partially cured prior to being applied to the LED, as described above with reference to FIGS. 1 and 2 .
- FIG. 3B illustrates another process 300 b for forming a phosphor film 310 in accordance with multiple further embodiments.
- the phosphor elements need not be distributed uniformly in the matrix material.
- the process can include forming a matrix film layer 115 a from the matrix material 111 , using any of the film-forming processees described above.
- the matrix material 111 can accordingly have the adhesive and pliancy characteristics described above.
- the phosphor elements can then be disposed directly on the matrix film layer 115 a using a phosphor deposition process (shown in block 116 ).
- the phosphor elements can themselves be formed into a separate, phosphor film layer 115 b , also using any of the foregoing techniques described above.
- the phosphor film layer 115 b is then attached to the matrix film layer 115 a .
- the result is a multi-layer phosphor film 310 having a nonuniform distribution of phosphor elements.
- FIG. 4 is a partially schematic, exploded elevation view of a package 401 having a multi-layer phosphor film 310 , e.g., formed using any of the techniques described above with reference to FIG. 3B .
- the multi-layer phosphor film 310 can include the first layer 115 a formed from a matrix material, and the second layer 115 b formed from phosphor elements 112 .
- the phosphor elements 112 and/or sets of phosphor elements 112 can be selected to emit radiation at one or more than one wavelength.
- the phosphor elements 112 are concentrated in a region that is directly adjacent to the LED 130 . As discussed above with reference to FIG.
- the multi-layer phosphor film 310 can be self supporting or not self supporting, and in either embodiment, can include a carrier 420 to provide additional support.
- the carrier 420 does not include a lens portion.
- the carrier 420 can include a lens portion, e.g., similar to the lens portion 121 described above with reference to FIG. 1 .
- FIG. 5 is a partially schematic illustration of different techniques for applying the phosphor film to the LED in accordance with several embodiments of the disclosure.
- the phosphor film 510 can be formed directly on a carrier wafer 520 and can be sized to provide coverage for a multitude of LEDs.
- the carrier wafer 520 and the film 510 can be diced together to form film elements 516 .
- Individual film elements 516 are then individually placed on corresponding substrates 140 (one of which is shown in FIG. 5 ) using a conventional pick-and-place process.
- the wafer carrier 520 and the film 510 can be diced after being attached to the corresponding LEDs.
- the wafer carrier 520 and the associated film 510 can be attached directly to an LED wafer 133 , having LEDs that are already wire bonded to pre-patterned or otherwise formed electrical lines in the LED wafer 133 itself.
- the entire assembly can be diced or singulated to produce individual packages, e.g., having a configuration similar to that shown in FIG. 2 .
- different phosphor films e.g., phosphor films having different concentrations, distributions and/or types of phosphor elements
- singulated LEDs can be applied to singulated LEDs to account for differences in the output (e.g., color of the emitted light) produced by the LEDs.
- individual LEDs typically have somewhat different emitted light characteristics due to variations in the associated manufacturing processes and are accordingly “binned” so that LEDs with similar light characteristics are grouped together.
- LEDs from different bins can receive phosphor films that have different phosphor characteristics to differentially adjust the light output of the resulting package.
- LEDs from different bins can be packaged so as to produce the same or nearly the same light output, and/or LEDs within a bin can be packaged to conform to other LEDs within the bin.
- An advantage of this technique is that it can reduce or eliminate the number of bins used to categorize LEDs, and/or improve the uniformity of LEDs within a bin.
- One feature of at least some embodiments described above with reference to FIGS. 1-5 is that they can include a pre-formed, phosphor-containing film that is placed on a corresponding LED (at the wafer level or the individual die level) after the LED has been wire bonded to a suitable support structure. Because the phosphor elements are carried by a film, they need not be deposited directly on the LED in a liquid or other form. As a result, the support member need not include a cavity, recess, dam, or other containment feature that contains and/or confines the phosphor elements. In addition, it is expected that in at least some embodiments, the distribution of phosphor elements, once applied to the LED, will be more uniform than the distribution obtained with conventional techniques.
- Another advantage of embodiments of the foregoing process is that, because the film is compliant, it can conform to the shape of the underlying wire bonds, without further processing.
- the conformal nature of the film can eliminate the need to cut grooves or recesses in the film to accommodate the wire bonds. Accordingly, the process can require fewer steps than are used in some conventional techniques.
- Embodiments of the process can also eliminate the need to lay down a separate layer that covers the wire bonds, prior to disposing the phosphor elements on the LED, which is a process used in other conventional techniques. This feature allows the phosphor in the film 110 to be positioned directly adjacent to the LED 130 , e.g., directly adjacent to the active surface 132 .
- the phosphor elements can be added to the film prior to engaging a film with the LEDs.
- This feature allows the film to be manufactured entirely separately from the LED dies, e.g., in parallel with manufacturing and processing the dies.
- This arrangement can reduce the flow time required to package a die and can allow the dies and films to be formed or stockpiled separately, which reduces the likelihood for bottlenecks to form in the overall manufacturing process.
- the foregoing features, alone or in combination, can reduce the time and expense associated with packaging the die and, accordingly, can reduce the cost of the resulting die package.
- the matrix material can include other compositions (e.g., other than epoxy), that also provide support for the phosphor elements, and that have adhesive characteristics to facilitate bonding to the LED and/or the support member.
- Such materials can include, but are not limited to, solid state, partially cured thermoset adhesive materials, of which b-stage epoxy is one example.
- the LEDs can have shapes, sizes, and/or other characteristics different than those shown in the Figures. Certain aspects of the disclosure described in the context of particular embodiments may be combined or eliminated in other embodiments.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Abstract
Description
- The present disclosure is directed generally to packaged light emitting diodes (LEDs) with phosphor films, and associated systems and methods.
- LEDs are increasingly in demand for many purposes because such devices efficiently produce high-intensity, high-quality light. For example, mobile phones, personal digital assistants, digital cameras, MP3 players, and other portable devices use LEDs or other solid state lighting devices to produce white light for background illumination. LEDs may also be used in applications other than electronic devices, for example, in ceiling panels, desk lamps, refrigerator lights, table lamps, streets lights, automobile headlights, and other instances in which lighting is necessary or desirable.
- One challenge associated with producing LEDs is containing production costs in a manner that allows LEDs to be priced competitively with other more conventional lighting sources. Because a significant fraction of the cost of an LED is attributed to the process for making the LED, manufacturers have attempted to reduce processing costs. One aspect of the processing costs relates to the use of phosphor in a packaged LED system. In particular, typical LEDs emit blue light, while many applications require or at least benefit from softer colored or white light. Accordingly, manufacturers coat such LEDs with a phosphor that absorbs a portion of the emitted blue light and re-emits the light as yellow light, producing a composite light emission that is white or at least approximately white.
- Existing processes for providing a phosphor region in the emitted light path of an LED can add significantly to the cost of the LED. One such process includes placing the LED in a cavity or recess of a supporting substrate, and then filling the cavity with phosphor. Another approach includes placing the LED on a flat substrate and then building a dam around the LED and filling the interior region with phosphor. Still another approach includes depositing a phosphor layer directly on the LED die and then removing part of the phosphor to expose the underlying bond pads, thus allowing electrical connections to be made to the die. While the foregoing processes have resulted in LEDs that produce suitable light emission characteristics, they all contribute to the cost of the LED. Accordingly, there remains a need in the industry for an improved, low-cost processing technique.
-
FIG. 1 is a partially schematic, cross-sectional side view of components of an LED system configured in accordance with an embodiment of the disclosure. -
FIG. 2 is a partially schematic, cross-sectional side view of the components shown inFIG. 1 , joined to form a package in accordance with an embodiment of the disclosure. -
FIG. 3A is a flow diagram illustrating a process for forming a phosphor film in accordance with an embodiment of the disclosure. -
FIG. 3B is a flow diagram illustrating a process for forming a multi-layer phosphor film in accordance with another embodiment of the disclosure. -
FIG. 4 is a partially schematic, cross-sectional exploded side view of a package having a multi-layer phosphor film in accordance with an embodiment of the disclosure. -
FIG. 5 is a partially schematic illustration of multiple methods for forming LED packages in accordance with further embodiments of the disclosure. - Aspects of the present disclosure are directed generally to packaged light emitting diodes (LEDs) with phosphor films, and associated systems and methods. Specific details of several embodiments of the disclosure are described below with reference to particular LEDs to provide a thorough understanding of these embodiments. In other embodiments, aspects of the present disclosure can be used in conjunction with LEDs having other configurations. Several details describing structures or processees that are well-known and often associated with LEDs, but that may unnecessarily obscure some significant aspects of the present disclosure are not set forth in the following description for purposes of clarity. Moreover, although the following disclosure sets forth several embodiments of different aspects of the invention, several other embodiments can have different configurations, different components, and/or different processees or steps than those described in this section. Accordingly, the invention may have other embodiments with additional elements, and/or without several of the elements described below with reference to
FIGS. 1-5 . -
FIG. 1 is a partially schematic, cross-sectional side view of anLED system 100 that includes components that are combined to form apackage 101 in accordance with an embodiment of the disclosure. These components can include asupport member 140 carrying anLED 130, and aphosphor film 110 optionally supported by acarrier 120. Thephosphor film 110 is conformal, and is attached to theLED 130 and thesupport member 140 after theLED 130 is connected to thesupport member 140 withwire bonds 104. Further details of this arrangement and associated processes are described below. - In a particular embodiment shown in
FIG. 1 , thesupport member 140 is formed from a ceramic or other suitable substrate material, and has a first (e.g., upwardly facing)surface 143 a and a second (e.g., downwardly facing)surface 143 b. Eachsupport member 140 further includes first and second support 141 a, 141 b (e.g., bond pads) that provide for electrical communication to and/or from themember bond sites LED 130. Accordingly, each of the support 141 a, 141 b is connected to correspondingmember bond sites 102 a, 102 b by apackage bond site corresponding via 142 or other electrically conductive structure. The first and second 102 a, 102 b are accessible from outside thepackages bond sites package 101 to facilitate physical and electrical connections between thepackage 101 and external devices (not shown inFIG. 1 ). - The
support member 140 carries theLED 130, e.g., at the firstsupport member surface 143 a. TheLED 130 can include a firstLED bond site 131 a and a secondLED bond site 131 b. The secondLED bond site 131 b can face toward and be electrically connected directly to the second supportmember bond site 141 b. In another embodiment, the secondLED bond site 131 b can face away from the second supportmember bond site 141 b, and can be connected to the second supportmember bond site 141 b with a wire bond. In either embodiment, the firstLED bond site 131 a can be electrically connected to the first supportmember bond site 141 a with awire bond 104. In a particular aspect of an embodiment shown inFIG. 1 , thepackage 101 can also include an electrostatic discharge (ESD)die 103 that provides protection for theLED 130 and that is also electrically connected to the first supportmember bond site 141 a with awire bond 104, and to the second supportmember bond site 141 b with a suitable backside surface-to-surface connection. In other embodiments, the ESD die 103 can be omitted. - In an embodiment shown in
FIG. 1 , theLED 130 has an upwardly facingactive surface 132 through which light (e.g., blue light) is emitted. Thephosphor film 110 is positioned over theactive surface 132 to alter the characteristics of the light directed away from thepackage 101. Accordingly, thephosphor film 110 can include amatrix material 111 having a distribution ofphosphor elements 112. Thephosphor elements 112 receive light from theLED 130 and emit the light at a different wavelength, for example, to produce a composite emitted light that is white rather than blue. - In a particular embodiment, the
phosphor film 110 is formed from a self-supporting, shape-retaining yet pliant or conformable material. For example, thematrix material 111 of thephosphor film 110 can include a partially cured (e.g., b-stage) epoxy material that has enough strength to be handled when in film form, but which can conform to the LED and associated features when heated. During processing, thephosphor film 110 is brought into contact with theLED 130 and thesupport member 140, as indicated by arrows C, and heated to form an assembled unit described later with reference toFIG. 2 . Thematrix material 111 can soften due to the heat, allowing thephosphor film 110 to conform to theLED 130 and to thewire bonds 104 that connect theLED 130 to thesupport member 140. In a particular embodiment, thematrix material 111 is sufficiently compliant at elevated temperatures to conform, flow or otherwise deform around thewire bonds 104, without displacing, distorting, disturbing, or otherwise changing the location and/or shape of thewire bonds 104. Accordingly, theLED 130 can be wire bonded to thesupport member 140 prior to adding thephosphor film 110, without thephosphor film 110 disturbing the integrity of thewire bonds 104. - The
matrix material 111 is also selected to be at least partially (and in particular embodiments, completely) transparent to radiation emitted by theLED 130 and thefilm 110. For example, in cases for which the LED emits blue light and thephosphor elements 112 emit yellow light, thematrix material 111 is selected to be generally transparent to both wavelengths. In certain embodiments, thefilm 110 can includemultiple phosphor elements 112 with different phosphor elements selected to emit light at corresponding different wavelengths. In other embodiments, thepackage 101 can includemultiple film layers 110, each havingphosphor elements 112 that emit light at a corresponding different wavelength. In any of these embodiments, thematrix material 111 can be selected to be at least partially (and in particular embodiments, completely) transparent to one or more (e.g., all) the emitted wavelengths. - In a particular embodiment, the
phosphor film 110 is strong enough to withstand routine microelectronic device handling techniques as a standalone unit. In other embodiments, thephosphor film 110 can be attached to thecarrier 120, which can be rigid or semi-rigid so as to provide additional support to the phosphor film during the manufacturing process. Accordingly, thephosphor film 110 can include afirst surface 113 a facing toward theLED 130 and thesupport member 140, and asecond surface 113 b facing opposite from thefirst surface 113 a and attached to thecarrier 120. Thecarrier 120 is typically stiffer and/or more rigid than thephosphor film 120 to provide additional support. In a particular embodiment, thecarrier 120 can include a generally flat, generally rigid, and generally transparent material that provides support to thephosphor film 110 without affecting the transmission of light away from theLED 130. For example, thecarrier 120 can include a flat layer of glass that is transparent to radiation (e.g., light, and in particular embodiments, visible light). In other embodiments, thecarrier 120 can include features that do affect the light emitted by theLED 130. For example, thecarrier 120 can include alens portion 121 that redirects light emitted from theLED 130. In another embodiment, thecarrier 120 can include additionalphosphor elements 112 beyond those present in thephosphor film 110. If thecarrier 120 includes phosphor elements, the concentration of phosphor elements in thecarrier 120 is generally less than the concentration ofphosphor elements 112 in thephosphor film 110. Thecarrier 120 can be fixedly attached to thefilm 110, and can form a permanent part of thepackage 101. In other embodiments, the carrier can be released from thefilm 110 after thefilm 110 is attached to theLED 130 and thesupport member 140. -
FIG. 2 illustrates thepackage 101 after thephosphor film 110 has been brought into contact with theLED 130 and thesubstrate 140. During the manufacturing process,heat 105 is applied to the elements of thepackage 101, allowing thephosphor film 110 to soften and conform to thewire bonds 104, theLED 130, the ESD die 103 (if present), and/or other features that may project from or be recessed from thefirst surface 143 a of thesubstrate 140. Accordingly, thephosphor film 110 can completely surround, encapsulate, and/or otherwise accommodate thewire bonds 104 at the firstLED bond site 131 a, the first supportmember bond site 141 a, and/or locations of thewire bond 104 between the two 113 a, 141 a. Thebond sites entire package 101 can then be fully cured to harden thephosphor film 110 in the shape and position shown inFIG. 2 , with thephosphor film 110 adhered to theLED 130 and thesubstrate 140. -
FIG. 3A is a schematic block diagram illustrating aprocess 300 a for forming aphosphor film 110 in accordance with an embodiment of the disclosure. In one aspect of this embodiment, a matrix material 111 (e.g., a softened, liquid, or otherwise flowable or malleable epoxy or other material) is combined withphosphor elements 112 to form amixture 114. Thephosphor elements 112 can be uniformly distributed in thematrix material 111. Thereafter, themixture 114 can be shaped or otherwise manipulated to produce thephosphor film 110 in accordance with any of a variety of suitable techniques. Such techniques can include a spin-on process, a squeegee process, or another process that produces aphosphor film 110 having a uniform thickness. Thephosphor film 110 can then be partially cured prior to being applied to the LED, as described above with reference toFIGS. 1 and 2 . -
FIG. 3B illustrates anotherprocess 300 b for forming aphosphor film 310 in accordance with multiple further embodiments. In these embodiments, the phosphor elements need not be distributed uniformly in the matrix material. For example, the process can include forming amatrix film layer 115 a from thematrix material 111, using any of the film-forming processees described above. Thematrix material 111 can accordingly have the adhesive and pliancy characteristics described above. The phosphor elements can then be disposed directly on thematrix film layer 115 a using a phosphor deposition process (shown in block 116). In an alternative embodiment, the phosphor elements can themselves be formed into a separate,phosphor film layer 115 b, also using any of the foregoing techniques described above. In this embodiment, thephosphor film layer 115 b is then attached to thematrix film layer 115 a. In either of the foregoing embodiments, the result is amulti-layer phosphor film 310 having a nonuniform distribution of phosphor elements. -
FIG. 4 is a partially schematic, exploded elevation view of apackage 401 having amulti-layer phosphor film 310, e.g., formed using any of the techniques described above with reference toFIG. 3B . Themulti-layer phosphor film 310 can include thefirst layer 115 a formed from a matrix material, and thesecond layer 115 b formed fromphosphor elements 112. As discussed above, thephosphor elements 112 and/or sets ofphosphor elements 112 can be selected to emit radiation at one or more than one wavelength. Thephosphor elements 112 are concentrated in a region that is directly adjacent to theLED 130. As discussed above with reference toFIG. 1 , themulti-layer phosphor film 310 can be self supporting or not self supporting, and in either embodiment, can include acarrier 420 to provide additional support. In an embodiment shown inFIG. 4 , thecarrier 420 does not include a lens portion. In other embodiments, thecarrier 420 can include a lens portion, e.g., similar to thelens portion 121 described above with reference toFIG. 1 . -
FIG. 5 is a partially schematic illustration of different techniques for applying the phosphor film to the LED in accordance with several embodiments of the disclosure. In a particular embodiment, thephosphor film 510 can be formed directly on acarrier wafer 520 and can be sized to provide coverage for a multitude of LEDs. In one aspect of this embodiment, thecarrier wafer 520 and thefilm 510 can be diced together to formfilm elements 516.Individual film elements 516 are then individually placed on corresponding substrates 140 (one of which is shown inFIG. 5 ) using a conventional pick-and-place process. In another embodiment, thewafer carrier 520 and thefilm 510 can be diced after being attached to the corresponding LEDs. For example, thewafer carrier 520 and the associatedfilm 510 can be attached directly to anLED wafer 133, having LEDs that are already wire bonded to pre-patterned or otherwise formed electrical lines in theLED wafer 133 itself. After thefilm 510 and thecarrier wafer 520 have been attached to theLED wafer 133, the entire assembly can be diced or singulated to produce individual packages, e.g., having a configuration similar to that shown inFIG. 2 . - In another embodiment, different phosphor films (e.g., phosphor films having different concentrations, distributions and/or types of phosphor elements) can be applied to singulated LEDs to account for differences in the output (e.g., color of the emitted light) produced by the LEDs. For example, individual LEDs typically have somewhat different emitted light characteristics due to variations in the associated manufacturing processes and are accordingly “binned” so that LEDs with similar light characteristics are grouped together. LEDs from different bins can receive phosphor films that have different phosphor characteristics to differentially adjust the light output of the resulting package. Using this technique, LEDs from different bins can be packaged so as to produce the same or nearly the same light output, and/or LEDs within a bin can be packaged to conform to other LEDs within the bin. An advantage of this technique is that it can reduce or eliminate the number of bins used to categorize LEDs, and/or improve the uniformity of LEDs within a bin.
- One feature of at least some embodiments described above with reference to
FIGS. 1-5 is that they can include a pre-formed, phosphor-containing film that is placed on a corresponding LED (at the wafer level or the individual die level) after the LED has been wire bonded to a suitable support structure. Because the phosphor elements are carried by a film, they need not be deposited directly on the LED in a liquid or other form. As a result, the support member need not include a cavity, recess, dam, or other containment feature that contains and/or confines the phosphor elements. In addition, it is expected that in at least some embodiments, the distribution of phosphor elements, once applied to the LED, will be more uniform than the distribution obtained with conventional techniques. - Another advantage of embodiments of the foregoing process is that, because the film is compliant, it can conform to the shape of the underlying wire bonds, without further processing. In particular, the conformal nature of the film can eliminate the need to cut grooves or recesses in the film to accommodate the wire bonds. Accordingly, the process can require fewer steps than are used in some conventional techniques. Embodiments of the process can also eliminate the need to lay down a separate layer that covers the wire bonds, prior to disposing the phosphor elements on the LED, which is a process used in other conventional techniques. This feature allows the phosphor in the
film 110 to be positioned directly adjacent to theLED 130, e.g., directly adjacent to theactive surface 132. Still further, the phosphor elements can be added to the film prior to engaging a film with the LEDs. This feature allows the film to be manufactured entirely separately from the LED dies, e.g., in parallel with manufacturing and processing the dies. This arrangement can reduce the flow time required to package a die and can allow the dies and films to be formed or stockpiled separately, which reduces the likelihood for bottlenecks to form in the overall manufacturing process. The foregoing features, alone or in combination, can reduce the time and expense associated with packaging the die and, accordingly, can reduce the cost of the resulting die package. - From the foregoing, it will be appreciated that specific embodiments of the disclosure have been described herein for purposes of illustration, but that various modifications may be made without deviating from the disclosure. For example, the matrix material can include other compositions (e.g., other than epoxy), that also provide support for the phosphor elements, and that have adhesive characteristics to facilitate bonding to the LED and/or the support member. Such materials can include, but are not limited to, solid state, partially cured thermoset adhesive materials, of which b-stage epoxy is one example. The LEDs can have shapes, sizes, and/or other characteristics different than those shown in the Figures. Certain aspects of the disclosure described in the context of particular embodiments may be combined or eliminated in other embodiments. For example, the
carrier 120 shown inFIG. 1 may be eliminated in some embodiments, and may be combined with the phosphor film shown inFIG. 4 in other embodiments. Further, while advantages associated with certain embodiments have been described in the context of those embodiments, other embodiments may also exhibit such advantages. Not all embodiments need necessarily exhibit such advantages to fall within the scope of the present disclosure. Accordingly, the disclosure and associated technology can encompass other embodiments not expressly shown or described herein.
Claims (44)
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/819,795 US20110309393A1 (en) | 2010-06-21 | 2010-06-21 | Packaged leds with phosphor films, and associated systems and methods |
| PCT/US2011/041166 WO2011163170A2 (en) | 2010-06-21 | 2011-06-21 | Packaged leds with phosphor films, and associated systems and methods |
| SG2012089173A SG186164A1 (en) | 2010-06-21 | 2011-06-21 | Packaged leds with phosphor films, and associated systems and methods |
| SG10201507806XA SG10201507806XA (en) | 2010-06-21 | 2011-06-21 | Packaged leds with phosphor films, and associated systems and methods |
| CN2011800306967A CN102947958A (en) | 2010-06-21 | 2011-06-21 | Packaged Light Emitting Diodes with Phosphor Films and Related Systems and Methods |
| CN201910757452.7A CN110429168B (en) | 2010-06-21 | 2011-06-21 | Packaged light emitting diodes with phosphor films and related systems and methods |
| TW100121668A TWI458134B (en) | 2010-06-21 | 2011-06-21 | Packaged light emitting diode with phosphor film and related systems and methods |
| SG10201911967SA SG10201911967SA (en) | 2010-06-21 | 2011-06-21 | Packaged leds with phosphor films, and associated systems and methods |
| KR1020137000706A KR101627021B1 (en) | 2010-06-21 | 2011-06-21 | Packaged leds with phosphor films, and associated systems and methods |
| US15/464,596 US11081625B2 (en) | 2010-06-21 | 2017-03-21 | Packaged LEDs with phosphor films, and associated systems and methods |
| US17/391,703 US11901494B2 (en) | 2010-06-21 | 2021-08-02 | Packaged LEDs with phosphor films, and associated systems and methods |
| US18/439,689 US20240186465A1 (en) | 2010-06-21 | 2024-02-12 | Packaged leds with phosphor films, and associated systems and methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/819,795 US20110309393A1 (en) | 2010-06-21 | 2010-06-21 | Packaged leds with phosphor films, and associated systems and methods |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/464,596 Division US11081625B2 (en) | 2010-06-21 | 2017-03-21 | Packaged LEDs with phosphor films, and associated systems and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20110309393A1 true US20110309393A1 (en) | 2011-12-22 |
Family
ID=45327876
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/819,795 Abandoned US20110309393A1 (en) | 2010-06-21 | 2010-06-21 | Packaged leds with phosphor films, and associated systems and methods |
| US15/464,596 Active US11081625B2 (en) | 2010-06-21 | 2017-03-21 | Packaged LEDs with phosphor films, and associated systems and methods |
| US17/391,703 Active 2031-04-06 US11901494B2 (en) | 2010-06-21 | 2021-08-02 | Packaged LEDs with phosphor films, and associated systems and methods |
| US18/439,689 Pending US20240186465A1 (en) | 2010-06-21 | 2024-02-12 | Packaged leds with phosphor films, and associated systems and methods |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/464,596 Active US11081625B2 (en) | 2010-06-21 | 2017-03-21 | Packaged LEDs with phosphor films, and associated systems and methods |
| US17/391,703 Active 2031-04-06 US11901494B2 (en) | 2010-06-21 | 2021-08-02 | Packaged LEDs with phosphor films, and associated systems and methods |
| US18/439,689 Pending US20240186465A1 (en) | 2010-06-21 | 2024-02-12 | Packaged leds with phosphor films, and associated systems and methods |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20110309393A1 (en) |
| KR (1) | KR101627021B1 (en) |
| CN (2) | CN110429168B (en) |
| SG (3) | SG10201911967SA (en) |
| TW (1) | TWI458134B (en) |
| WO (1) | WO2011163170A2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120083056A1 (en) * | 2010-09-30 | 2012-04-05 | Nitto Denko Corporation | Light emitting diode sealing member and method for producing light emitting diode device |
| US20120112237A1 (en) * | 2010-11-05 | 2012-05-10 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Led package structure |
| WO2014023617A1 (en) * | 2012-08-08 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component, conversion-medium lamina and method for producing a conversion-medium lamina |
| US20140291705A1 (en) * | 2010-08-25 | 2014-10-02 | Samsung Electronics Co., Ltd. | Phosphor film, method of manufacturing the same, coating method of phosphor layer, method of manufacturing led package and led package manufactured thereby |
| WO2014167458A1 (en) * | 2013-04-08 | 2014-10-16 | Koninklijke Philips N.V. | Led with high thermal conductivity particles in phosphor conversion layer and the method of fabricating the same |
| US20150076529A1 (en) * | 2013-09-13 | 2015-03-19 | Kabushiki Kaisha Toshiba | Light-emitting device |
| US20150155450A1 (en) * | 2013-11-29 | 2015-06-04 | Nichia Corporation | Light emitting device |
| US9257623B2 (en) | 2014-02-17 | 2016-02-09 | Samsung Electronics Co., Ltd. | Light-emitting diode package |
| US20170054110A1 (en) * | 2014-04-30 | 2017-02-23 | Osram Opto Semiconductors Gmbh | Lighting Device and Method for Producing a Lighting Device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
| CN103427003B (en) * | 2012-05-25 | 2016-08-10 | 华夏光股份有限公司 | The forming method of semiconductor light-emitting apparatus |
| TWI644450B (en) * | 2012-08-30 | 2018-12-11 | 晶元光電股份有限公司 | Light emitting device |
| CN112018224B (en) * | 2020-09-09 | 2022-10-28 | 京东方科技集团股份有限公司 | Die bonding method and display panel |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050200796A1 (en) * | 2004-02-09 | 2005-09-15 | Hiroki Iwanaga | LED lighting apparatus |
| US7125917B2 (en) * | 2001-06-06 | 2006-10-24 | Henkel Corporation | Epoxy molding compounds with resistance to UV light and heat |
| US20060284207A1 (en) * | 2005-06-20 | 2006-12-21 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package with metal reflective layer and method of manufacturing the same |
| US20070013057A1 (en) * | 2003-05-05 | 2007-01-18 | Joseph Mazzochette | Multicolor LED assembly with improved color mixing |
| US20070018573A1 (en) * | 2004-02-18 | 2007-01-25 | Showa Denko K,K. | Phosphor, production method thereof and light-emitting device using the phosphor |
| US7176501B2 (en) * | 2003-05-12 | 2007-02-13 | Luxpia Co, Ltd | Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same |
| US20070161135A1 (en) * | 2006-01-09 | 2007-07-12 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
| US20070194676A1 (en) * | 2006-02-20 | 2007-08-23 | Citizen Electronics Co., Ltd. | Light emitting apparatus and method for producing the same |
| US7271423B2 (en) * | 2000-09-21 | 2007-09-18 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device and light-emitting display device therewith |
| US20080105941A1 (en) * | 2006-11-03 | 2008-05-08 | Siliconware Precision Industries Co., Ltd. | Sensor-type semiconductor package and fabrication |
| US20080169480A1 (en) * | 2007-01-11 | 2008-07-17 | Visera Technologies Company Limited | Optoelectronic device package and packaging method thereof |
| US20090045422A1 (en) * | 2005-09-22 | 2009-02-19 | Mitsubishi Chemical Corporation | Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member |
| US7511312B2 (en) * | 2006-07-27 | 2009-03-31 | Samsung Electro-Mechanics Co., Ltd. | Surface mounting device-type light emitting diode |
| US7554129B2 (en) * | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US20100013373A1 (en) * | 2008-07-18 | 2010-01-21 | Sharp Kabushiki Kaisha | Light-emitting device and method for manufacturing light-emitting device |
| US20100309648A1 (en) * | 2008-01-31 | 2010-12-09 | Koninklijke Philips Electronics N.V. | Light emitting device |
| US7872410B2 (en) * | 2007-04-16 | 2011-01-18 | Toyoda Gosei Co., Ltd. | Light emitting device and light emitter |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1177377C (en) * | 2000-09-01 | 2004-11-24 | 西铁城电子股份有限公司 | Surface mount type light emitting diode and manufacturing method thereof |
| KR100527921B1 (en) * | 2003-05-12 | 2005-11-15 | 럭스피아 주식회사 | White Semiconductor Light Emitting Device |
| CN1317775C (en) * | 2003-12-10 | 2007-05-23 | 玄基光电半导体股份有限公司 | Light-emitting diode packaging structure and packaging method thereof |
| KR100540848B1 (en) * | 2004-01-02 | 2006-01-11 | 주식회사 메디아나전자 | White light emitting diode device composed of double mold and manufacturing method |
| EP1753035A4 (en) * | 2004-04-28 | 2011-12-21 | Panasonic Corp | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
| US20050264194A1 (en) * | 2004-05-25 | 2005-12-01 | Ng Kee Y | Mold compound with fluorescent material and a light-emitting device made therefrom |
| US7372198B2 (en) | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
| KR101253381B1 (en) * | 2005-05-11 | 2013-04-11 | 니폰 덴키 가라스 가부시키가이샤 | Fluorescent substance composite glass, fluorescent substance composite glass green sheet, and process for producing fluorescent substance composite glass |
| WO2006127030A1 (en) * | 2005-05-20 | 2006-11-30 | Cree, Inc. | High efficacy white led |
| US7288798B2 (en) * | 2005-06-02 | 2007-10-30 | Lighthouse Technology Co., Ltd | Light module |
| US7294861B2 (en) * | 2005-06-30 | 2007-11-13 | 3M Innovative Properties Company | Phosphor tape article |
| US7365371B2 (en) | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
| US7273768B2 (en) | 2005-08-30 | 2007-09-25 | Mutual-Pak Technology Co. Ltd. | Wafer-level package and IC module assembly method for the wafer-level package |
| JP2007067204A (en) * | 2005-08-31 | 2007-03-15 | Toshiba Lighting & Technology Corp | Light emitting diode device |
| CN100594623C (en) * | 2005-09-20 | 2010-03-17 | 松下电工株式会社 | LED lighting equipment |
| TW200730616A (en) * | 2005-09-30 | 2007-08-16 | Univ California | Cerium based phosphor materials for solid-state lighting applications |
| KR100685845B1 (en) * | 2005-10-21 | 2007-02-22 | 삼성에스디아이 주식회사 | Organic light emitting display device and manufacturing method thereof |
| US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
| EP1979439A1 (en) | 2006-01-16 | 2008-10-15 | Philips Intellectual Property & Standards GmbH | Light emitting device with a eu-comprising phosphor material |
| TWI284433B (en) * | 2006-02-23 | 2007-07-21 | Novalite Optronics Corp | Light emitting diode package and fabricating method thereof |
| EP3422425B1 (en) | 2006-04-24 | 2022-02-23 | CreeLED, Inc. | Side-view surface mount white led |
| TW200802948A (en) * | 2006-06-28 | 2008-01-01 | Everlight Electronics Co Ltd | Method of packaging a multicolor LED and a packaging structure thereof |
| CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | Light emitting diode lighting arrangement including a light emitting phosphor |
| JP5409369B2 (en) * | 2006-10-12 | 2014-02-05 | カンブリオス テクノロジーズ コーポレイション | Nanowire-based transparent conductor and its application |
| US20080121911A1 (en) | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| TWI392111B (en) | 2007-04-11 | 2013-04-01 | 億光電子工業股份有限公司 | Fluorescent powder coating process for light emitting diode device |
| US20090001599A1 (en) | 2007-06-28 | 2009-01-01 | Spansion Llc | Die attachment, die stacking, and wire embedding using film |
| KR101361575B1 (en) | 2007-09-17 | 2014-02-13 | 삼성전자주식회사 | Light Emitting Diode package and method of manufacturing the same |
| US7928458B2 (en) * | 2008-07-15 | 2011-04-19 | Visera Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
| TWI608760B (en) * | 2008-11-13 | 2017-12-11 | 行家光電有限公司 | Method for forming phosphor powder conversion light-emitting element |
| KR101039957B1 (en) * | 2008-11-18 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device and display device having same |
| US20100181582A1 (en) * | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
| CN101740707B (en) * | 2009-12-11 | 2013-11-06 | 晶科电子(广州)有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
| US8771577B2 (en) * | 2010-02-16 | 2014-07-08 | Koninklijke Philips N.V. | Light emitting device with molded wavelength converting layer |
| US8598612B2 (en) * | 2010-03-30 | 2013-12-03 | Micron Technology, Inc. | Light emitting diode thermally enhanced cavity package and method of manufacture |
| US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
| KR101253586B1 (en) * | 2010-08-25 | 2013-04-11 | 삼성전자주식회사 | Phosphor film, method of manufacturing the same, method of coating phosphor layer on an LED chip, method of manufacturing LED package and LED package manufactured thereof |
| DE112011102800T8 (en) * | 2010-08-25 | 2013-08-14 | Samsung Electronics Co., Ltd. | Phosphor film, method for producing the same, coating method for a phosphor layer, method of manufacturing an LED package and LED package manufactured thereby |
-
2010
- 2010-06-21 US US12/819,795 patent/US20110309393A1/en not_active Abandoned
-
2011
- 2011-06-21 TW TW100121668A patent/TWI458134B/en active
- 2011-06-21 KR KR1020137000706A patent/KR101627021B1/en active Active
- 2011-06-21 CN CN201910757452.7A patent/CN110429168B/en active Active
- 2011-06-21 SG SG10201911967SA patent/SG10201911967SA/en unknown
- 2011-06-21 CN CN2011800306967A patent/CN102947958A/en active Pending
- 2011-06-21 SG SG10201507806XA patent/SG10201507806XA/en unknown
- 2011-06-21 SG SG2012089173A patent/SG186164A1/en unknown
- 2011-06-21 WO PCT/US2011/041166 patent/WO2011163170A2/en not_active Ceased
-
2017
- 2017-03-21 US US15/464,596 patent/US11081625B2/en active Active
-
2021
- 2021-08-02 US US17/391,703 patent/US11901494B2/en active Active
-
2024
- 2024-02-12 US US18/439,689 patent/US20240186465A1/en active Pending
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7271423B2 (en) * | 2000-09-21 | 2007-09-18 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device and light-emitting display device therewith |
| US7125917B2 (en) * | 2001-06-06 | 2006-10-24 | Henkel Corporation | Epoxy molding compounds with resistance to UV light and heat |
| US20070013057A1 (en) * | 2003-05-05 | 2007-01-18 | Joseph Mazzochette | Multicolor LED assembly with improved color mixing |
| US7176501B2 (en) * | 2003-05-12 | 2007-02-13 | Luxpia Co, Ltd | Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same |
| US20050200796A1 (en) * | 2004-02-09 | 2005-09-15 | Hiroki Iwanaga | LED lighting apparatus |
| US20070018573A1 (en) * | 2004-02-18 | 2007-01-25 | Showa Denko K,K. | Phosphor, production method thereof and light-emitting device using the phosphor |
| US7554129B2 (en) * | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| US20060284207A1 (en) * | 2005-06-20 | 2006-12-21 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package with metal reflective layer and method of manufacturing the same |
| US20090045422A1 (en) * | 2005-09-22 | 2009-02-19 | Mitsubishi Chemical Corporation | Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member |
| US20070161135A1 (en) * | 2006-01-09 | 2007-07-12 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
| US20070194676A1 (en) * | 2006-02-20 | 2007-08-23 | Citizen Electronics Co., Ltd. | Light emitting apparatus and method for producing the same |
| US7511312B2 (en) * | 2006-07-27 | 2009-03-31 | Samsung Electro-Mechanics Co., Ltd. | Surface mounting device-type light emitting diode |
| US20080105941A1 (en) * | 2006-11-03 | 2008-05-08 | Siliconware Precision Industries Co., Ltd. | Sensor-type semiconductor package and fabrication |
| US20080169480A1 (en) * | 2007-01-11 | 2008-07-17 | Visera Technologies Company Limited | Optoelectronic device package and packaging method thereof |
| US7872410B2 (en) * | 2007-04-16 | 2011-01-18 | Toyoda Gosei Co., Ltd. | Light emitting device and light emitter |
| US20100309648A1 (en) * | 2008-01-31 | 2010-12-09 | Koninklijke Philips Electronics N.V. | Light emitting device |
| US20100013373A1 (en) * | 2008-07-18 | 2010-01-21 | Sharp Kabushiki Kaisha | Light-emitting device and method for manufacturing light-emitting device |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140291705A1 (en) * | 2010-08-25 | 2014-10-02 | Samsung Electronics Co., Ltd. | Phosphor film, method of manufacturing the same, coating method of phosphor layer, method of manufacturing led package and led package manufactured thereby |
| US9722146B2 (en) * | 2010-08-25 | 2017-08-01 | Samsung Electronics Co., Ltd. | Phosphor film, method of manufacturing the same, coating method of phosphor layer, method of manufacturing LED package and LED package manufactured thereby |
| US20120083056A1 (en) * | 2010-09-30 | 2012-04-05 | Nitto Denko Corporation | Light emitting diode sealing member and method for producing light emitting diode device |
| US20120112237A1 (en) * | 2010-11-05 | 2012-05-10 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Led package structure |
| WO2014023617A1 (en) * | 2012-08-08 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component, conversion-medium lamina and method for producing a conversion-medium lamina |
| US9406847B2 (en) | 2012-08-08 | 2016-08-02 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component, conversion-medium lamina and method for producing a conversion-medium lamina |
| US20160043285A1 (en) * | 2013-04-08 | 2016-02-11 | Koninklijke Philips N.V. | Led with high thermal conductivity particles in phosphor conversion layer |
| WO2014167458A1 (en) * | 2013-04-08 | 2014-10-16 | Koninklijke Philips N.V. | Led with high thermal conductivity particles in phosphor conversion layer and the method of fabricating the same |
| US9761765B2 (en) * | 2013-04-08 | 2017-09-12 | Koninklijke Philips N.V. | LED with high thermal conductivity particles in phosphor conversion layer |
| US10153404B2 (en) | 2013-04-08 | 2018-12-11 | Lumileds Llc | LED with high thermal conductivity particles in phosphor conversion layer |
| US20150076529A1 (en) * | 2013-09-13 | 2015-03-19 | Kabushiki Kaisha Toshiba | Light-emitting device |
| US20150155450A1 (en) * | 2013-11-29 | 2015-06-04 | Nichia Corporation | Light emitting device |
| US10629783B2 (en) * | 2013-11-29 | 2020-04-21 | Nichia Corporation | Light emitting device |
| US9257623B2 (en) | 2014-02-17 | 2016-02-09 | Samsung Electronics Co., Ltd. | Light-emitting diode package |
| US20170054110A1 (en) * | 2014-04-30 | 2017-02-23 | Osram Opto Semiconductors Gmbh | Lighting Device and Method for Producing a Lighting Device |
| US10374196B2 (en) * | 2014-04-30 | 2019-08-06 | Osram Opto Semiconductors Gmbh | Lighting device with color scattering layer and method for producing a lighting device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130036754A (en) | 2013-04-12 |
| US20210359173A1 (en) | 2021-11-18 |
| US20170194537A1 (en) | 2017-07-06 |
| SG10201507806XA (en) | 2015-10-29 |
| CN102947958A (en) | 2013-02-27 |
| US20240186465A1 (en) | 2024-06-06 |
| SG10201911967SA (en) | 2020-02-27 |
| WO2011163170A3 (en) | 2012-04-19 |
| TWI458134B (en) | 2014-10-21 |
| US11081625B2 (en) | 2021-08-03 |
| SG186164A1 (en) | 2013-01-30 |
| US11901494B2 (en) | 2024-02-13 |
| TW201205891A (en) | 2012-02-01 |
| CN110429168A (en) | 2019-11-08 |
| WO2011163170A2 (en) | 2011-12-29 |
| CN110429168B (en) | 2022-11-04 |
| KR101627021B1 (en) | 2016-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11901494B2 (en) | Packaged LEDs with phosphor films, and associated systems and methods | |
| US7943952B2 (en) | Method of uniform phosphor chip coating and LED package fabricated using method | |
| US9512968B2 (en) | LED module | |
| TWI445215B (en) | Method for forming a light converting material | |
| US7858408B2 (en) | LED with phosphor tile and overmolded phosphor in lens | |
| TWI540763B (en) | Method and apparatus for forming a uniform particle layer of a fluorescent material on a surface | |
| TWI476944B (en) | Light conversion structure of single crystal phosphor for illuminating device | |
| US8460952B2 (en) | Light emitting diode device, light emitting apparatus and method of manufacturing light emitting diode device | |
| US20120228646A1 (en) | Light emitting diode package and method for making the same | |
| TW201251145A (en) | Light emitting device module and method of manufacturing the same | |
| US20120194067A1 (en) | Led device | |
| US20100200887A1 (en) | Light emitting device | |
| CN101684933B (en) | Encapsulation structure and encapsulation method of white light-emitting diode | |
| CN113557609A (en) | LED light-emitting device and manufacturing method thereof | |
| CN112652696A (en) | LED light-emitting device and manufacturing method thereof | |
| US20130285096A1 (en) | Light emitting diode package and method for manufacturing the same | |
| KR20130077058A (en) | Led package and method for manufacturing the same | |
| CN112652695A (en) | LED light-emitting device and manufacturing method thereof | |
| CN102779793A (en) | Electronic element packaging structure, electronic device and manufacturing method thereof | |
| CN103022275B (en) | Packaging method of light-emitting diodes | |
| CN103531701B (en) | Light emitting diode package and manufacturing method thereof | |
| JP7177326B2 (en) | Light-emitting device and method for manufacturing light-emitting device | |
| TW201225344A (en) | Method of packaging light emitting diode | |
| TW201324874A (en) | Light-emitting diode package and method for making the same | |
| KR20100108915A (en) | Led package and its fabricating method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:GREENWOOD, JONATHON G.;REEL/FRAME:024568/0221 Effective date: 20100608 |
|
| AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 |
|
| AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT, MARYLAND Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 |
|
| AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |
|
| AS | Assignment |
Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT;REEL/FRAME:047243/0001 Effective date: 20180629 |
|
| AS | Assignment |
Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:050937/0001 Effective date: 20190731 |