US20110298103A1 - Semiconductor package and method of manufacturing the semiconductor package - Google Patents
Semiconductor package and method of manufacturing the semiconductor package Download PDFInfo
- Publication number
- US20110298103A1 US20110298103A1 US12/892,411 US89241110A US2011298103A1 US 20110298103 A1 US20110298103 A1 US 20110298103A1 US 89241110 A US89241110 A US 89241110A US 2011298103 A1 US2011298103 A1 US 2011298103A1
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- Prior art keywords
- shield
- semiconductor chip
- semiconductor package
- substrate
- ground circuit
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- H10W74/114—
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- H10W42/20—
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- H10W42/276—
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- H10W72/352—
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- H10W72/853—
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- H10W72/877—
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- H10W74/10—
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- H10W90/724—
Definitions
- the present invention is related to a semiconductor package and a method of manufacturing the semiconductor package.
- electromagnetic waves are generated from a semiconductor chip mounted in a semiconductor package.
- the electromagnetic waves not only disturb other semiconductor chips or lower the efficiency of signal transfer but also are harmful to the human body.
- the shielding technology was able to block the electromagnetic waves emitted to the outside of the semiconductor package or the electromagnetic waves permeated into the semiconductor package from the outside, it has not been able to block the electromagnetic waves between the semiconductor chips within the semiconductor package.
- the shielding member and a ground circuit need to be connected to each other, but it has been difficult to provide a connection space between the shielding member and the ground circuit as the semiconductor package becomes smaller and thinner.
- the present invention provides a semiconductor package and a method of manufacturing the semiconductor package that can block electromagnetic waves between semiconductor chips mounted inside the semiconductor package.
- the present invention also provides a semiconductor package and a method of manufacturing the semiconductor package that can be easily grounded for shielding.
- An aspect of the present invention features a semiconductor package.
- the semiconductor package in accordance with an embodiment of the present invention includes: a substrate having a ground circuit formed thereon; a semiconductor chip mounted on the substrate; a first shield formed on an upper surface of the semiconductor chip and connected with the ground circuit, the first shield being conductive; and a second shield covering the substrate and the semiconductor chip and connected with the first shield, the second shield being conductive
- the semiconductor package can also include a molding, which seals up the semiconductor chip mounted on the substrate, and the second shield can be formed on the molding.
- the semiconductor package can also include a conductive post, which connects the second shield with the first shield.
- the first shield and the ground circuit can be connected by way of wire-bonding.
- the first shield can be integrated in the semiconductor chip.
- the semiconductor package can also include an electronic device, which has a ground electrode connected with the ground circuit, and the ground electrode can be connected with the second shield.
- the method of manufacturing a semiconductor package in accordance with an embodiment of the present invention includes: proving a substrate having a ground circuit formed thereon and having a semiconductor chip mounted thereon; forming a first shield on an upper surface of the semiconductor chip, the first shield being conductive; connecting the first shield with the ground circuit; and forming a second shield covering the substrate and the semiconductor chip and connected with the first shield, the second shield being conductive.
- the method can also include forming a molding in such a way that the semiconductor chip mounted on the substrate is sealed up.
- the method can also include forming a through-hole in the molding, the first shield being exposed through the through-hole, and the forming of a second shield can include forming a second shield connected with the first shield by coating a conductive material on the molding.
- the method can also include forming a conductive post on the first shield, and the forming of a second shield can include forming a second shield connected with the conductive post.
- the connecting of the first shield with the ground circuit can include connecting the first shield with the ground circuit by way of wire-bonding.
- FIG. 1 is a sectional view of a semiconductor package in accordance with an embodiment of the present invention.
- FIG. 2 is a flow diagram of a method of manufacturing a semiconductor package in accordance with another embodiment of the present invention.
- FIG. 3 to FIG. 7 are sectional views illustrating the method of manufacturing a semiconductor package in accordance with another embodiment of the present invention.
- FIG. 1 is a sectional view of a semiconductor package in accordance with an embodiment of the present invention.
- the semiconductor package in accordance with an embodiment of the present invention includes a substrate 10 , a semiconductor chip 20 , a first shield 30 and a second shield 40 .
- the substrate 10 is where the semiconductor chip 20 is mounted, and is formed with a circuit pattern, which is connected to the semiconductor chip 20 , and a ground circuit 15 , which is needed for shielding.
- the semiconductor chip 20 is mounted on one surface of the substrate 10 , and the ground circuit 15 includes ground pads 16 , 17 , 18 required for grounding.
- the semiconductor chip 20 is an electronic part in which a variety of devices are integrated to perform certain functions and is mounted on one surface of the substrate 10 in the semiconductor package of this embodiment.
- the first shield 30 blocks electromagnetic waves generated from the semiconductor chip and grounds the second shield 40 .
- the first shield 30 is made of a conductive material, and is formed on an upper surface of the semiconductor chip 20 and is grounded with the ground circuit 15 . Accordingly, since the electromagnetic waves generated from the semiconductor chip 20 is primarily blocked by the first shield 30 , it is possible to block the electromagnetic waves from being transferred to an adjacent semiconductor chip. In other words, it is possible to shield between semiconductor chips within the semiconductor package.
- the first shield 30 since the first shield 30 is connected to the second shield 40 , the first shield 30 can form a double shielding structure together with the second shield 40 , thereby improving the shielding property.
- a wide ground area is formed by the first shield 30 on one face of the semiconductor chip 20 , a stable ground can be provided to the semiconductor chip 20 .
- the first shield 30 of the present embodiment can be a paste form that is stacked and hardened on the upper surface of the semiconductor chip 20 or a conductive film form that is adhered to the upper surface of the semiconductor chip 20 .
- the first shield 30 can be connected to the ground pad 16 of the ground circuit 15 by wire 35 bonding.
- the connection between the first shield 30 and the ground circuit 15 is not restricted to wire-bonding and can be made by various known connection methods.
- a first shield 32 can be formed on an upper surface of a semiconductor chip 22 as an integrated part of the semiconductor chip 22 .
- the connection between the first shield 32 and the ground pad 17 can be made through an internal circuit of the semiconductor chip 22 .
- the second shield 40 is a part that blocks electromagnetic waves from entering and exiting between an external part and the semiconductor package.
- the second shield 40 is made of a conductive material, such as metal, and covers the substrate 10 and the semiconductor chip 20 .
- the second shield 40 is connected with the first shield 30 that is connected with the ground circuit 15 .
- the second shield 40 of the present embodiment is grounded through the first shield 30 that is formed on the upper surface of the semiconductor chip 20 so that it is easier to provide the space for grounding.
- a molding 50 which seals up one surface of the substrate on which the semiconductor chip 20 is mounted, is formed, and the second shield 40 can be formed by coating a conductive material on the molding 50 .
- the second shield 40 can be connected to the first shield 30 by being connected to a conductive post 42 that is connected to the first shield 30 .
- the first shield 40 can be connected with a ground electrode 62 of an electronic device 60 . That is, if there is an electronic device 60 , which has a ground electrode 62 connected with the ground circuit 15 , on the substrate 10 , the first shield 40 can be connected with the ground electrode 62 of the electronic device 60 .
- FIG. 2 is a flow diagram of the method of manufacturing a semiconductor package in accordance with another embodiment of the present invention
- FIG. 3 to FIG. 7 are sectional views illustrating the method of manufacturing a semiconductor package in accordance with another embodiment of the present invention.
- the method of manufacturing a semiconductor package in accordance with the present embodiment includes providing a substrate (S 110 ), forming a first shield (S 120 ), connecting a ground circuit (S 130 ) and forming a second shield (S 140 ).
- a substrate 110 In the step of providing a substrate (S 110 ), a substrate 110 , on which a ground circuit 115 is formed and a semiconductor chip 120 is mounted, is provided.
- the substrate 110 which is a part on which the semiconductor chip 120 is mounted, is formed with a circuit pattern connected to the semiconductor chip 120 and the ground circuit 115 required for shielding.
- the semiconductor chip 120 is a part in which a variety of devices are integrated to perform certain functions, and is mounted on one face of the substrate 110 in the semiconductor package of this embodiment.
- the semiconductor chip 120 is mounted on one surface of the substrate 110 , and the ground circuit 115 includes ground pads needed for grounding.
- a conductive shield 130 is formed on an upper surface of the semiconductor chip 120 .
- the first shield 130 is made of a conductive material, such as metal, and is formed on the upper surface of the semiconductor chip 120 and connected with the ground circuit 115 . Accordingly, since the electromagnetic waves generated from the semiconductor chip 120 is primarily blocked by the first shield 130 , it is possible to block the electromagnetic waves from being transferred to an adjacent semiconductor chip. In other words, it is possible to shield between semiconductor chips within the semiconductor package.
- the first shield 130 of the present embodiment can be stacked and hardened in a paste form on the upper surface of the semiconductor chip 120 . Moreover, the first shield 130 can be adhered to the upper surface of the semiconductor chip as a conductive film form.
- the first shield 130 and the ground circuit 115 are connected to each other.
- the first shield 130 can be connected to a ground pad of the ground circuit 115 by wire 135 bonding.
- the connection between the first shield 130 and the ground circuit 115 is not restricted to wire-bonding and can be made by various known connection methods.
- a conductive second shield 140 which covers the substrate 110 and the semiconductor chip 120 and is connected with the first shield 130 , is formed.
- the second shield 140 is made of a conductive material, such as metal, and covers the substrate 110 and the semiconductor chip 120 .
- the second shield 140 is connected with the first shield 130 , which is connected with the ground circuit 115 .
- the second shield 140 of the present embodiment is grounded through the first shield 130 formed on the upper surface of the semiconductor chip 120 so that it is easier to provide the space for grounding.
- a molding 150 which seals up one surface of the substrate on which the semiconductor chip 120 is mounted, can be formed in the semiconductor package of the present embodiment.
- a through-hole 152 through which the first shield is exposed, can be formed in the molding 150 in order to ground the second shield 140 .
- FIG. 7 by coating a conductive material on the molding 150 and forming a conductive post 142 in the through-hole 152 , the second shield 140 that is connected with the first shield 130 can be formed.
- the second shield 140 that is connected to the conductive post is formed.
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
Abstract
A semiconductor package and a method of manufacturing the semiconductor package are disclosed. A semiconductor package in accordance with an embodiment of the present invention includes a substrate, which has a ground circuit formed thereon, a semiconductor chip, which is mounted on the substrate, a conductive first shield, which is formed on an upper surface of the semiconductor chip and connected with the ground circuit, and a conductive second shield, which covers the substrate and the semiconductor chip and is connected with the first shield. With a semiconductor package in accordance with an embodiment of the present invention, grounding is possible between semiconductor chips because a shield is also formed on an upper surface of the semiconductor chip, and the shielding property can be improved by a double shielding structure.
Description
- This application claims the benefit of Korean Patent Application No. 10-2010-0052413, filed with the Korean Intellectual Property Office on Jun. 3, 2010, the disclosure of which is incorporated herein by reference in its entirety.
- 1. Technical Field
- The present invention is related to a semiconductor package and a method of manufacturing the semiconductor package.
- 2. Description of the Related Art
- It is common that electromagnetic waves are generated from a semiconductor chip mounted in a semiconductor package. The electromagnetic waves not only disturb other semiconductor chips or lower the efficiency of signal transfer but also are harmful to the human body.
- Developed accordingly is a shielding technology that covers the semiconductor package with a conductive shielding member. However, although the shielding technology was able to block the electromagnetic waves emitted to the outside of the semiconductor package or the electromagnetic waves permeated into the semiconductor package from the outside, it has not been able to block the electromagnetic waves between the semiconductor chips within the semiconductor package.
- Moreover, the shielding member and a ground circuit need to be connected to each other, but it has been difficult to provide a connection space between the shielding member and the ground circuit as the semiconductor package becomes smaller and thinner.
- The present invention provides a semiconductor package and a method of manufacturing the semiconductor package that can block electromagnetic waves between semiconductor chips mounted inside the semiconductor package.
- The present invention also provides a semiconductor package and a method of manufacturing the semiconductor package that can be easily grounded for shielding.
- An aspect of the present invention features a semiconductor package. The semiconductor package in accordance with an embodiment of the present invention includes: a substrate having a ground circuit formed thereon; a semiconductor chip mounted on the substrate; a first shield formed on an upper surface of the semiconductor chip and connected with the ground circuit, the first shield being conductive; and a second shield covering the substrate and the semiconductor chip and connected with the first shield, the second shield being conductive
- The semiconductor package can also include a molding, which seals up the semiconductor chip mounted on the substrate, and the second shield can be formed on the molding.
- The semiconductor package can also include a conductive post, which connects the second shield with the first shield.
- The first shield and the ground circuit can be connected by way of wire-bonding.
- The first shield can be integrated in the semiconductor chip.
- The semiconductor package can also include an electronic device, which has a ground electrode connected with the ground circuit, and the ground electrode can be connected with the second shield.
- Another aspect of the present invention features a method of manufacturing a semiconductor package. The method of manufacturing a semiconductor package in accordance with an embodiment of the present invention includes: proving a substrate having a ground circuit formed thereon and having a semiconductor chip mounted thereon; forming a first shield on an upper surface of the semiconductor chip, the first shield being conductive; connecting the first shield with the ground circuit; and forming a second shield covering the substrate and the semiconductor chip and connected with the first shield, the second shield being conductive.
- The method can also include forming a molding in such a way that the semiconductor chip mounted on the substrate is sealed up.
- The method can also include forming a through-hole in the molding, the first shield being exposed through the through-hole, and the forming of a second shield can include forming a second shield connected with the first shield by coating a conductive material on the molding.
- The method can also include forming a conductive post on the first shield, and the forming of a second shield can include forming a second shield connected with the conductive post.
- The connecting of the first shield with the ground circuit can include connecting the first shield with the ground circuit by way of wire-bonding.
-
FIG. 1 is a sectional view of a semiconductor package in accordance with an embodiment of the present invention. -
FIG. 2 is a flow diagram of a method of manufacturing a semiconductor package in accordance with another embodiment of the present invention. -
FIG. 3 toFIG. 7 are sectional views illustrating the method of manufacturing a semiconductor package in accordance with another embodiment of the present invention. - Hereinafter, some embodiments of the present invention will be described with reference to the accompanying drawings.
-
FIG. 1 is a sectional view of a semiconductor package in accordance with an embodiment of the present invention. - The semiconductor package in accordance with an embodiment of the present invention includes a
substrate 10, asemiconductor chip 20, afirst shield 30 and asecond shield 40. - The
substrate 10 is where thesemiconductor chip 20 is mounted, and is formed with a circuit pattern, which is connected to thesemiconductor chip 20, and aground circuit 15, which is needed for shielding. - In the present embodiment, the
semiconductor chip 20 is mounted on one surface of thesubstrate 10, and theground circuit 15 includes 16, 17, 18 required for grounding.ground pads - The
semiconductor chip 20 is an electronic part in which a variety of devices are integrated to perform certain functions and is mounted on one surface of thesubstrate 10 in the semiconductor package of this embodiment. - The
first shield 30 blocks electromagnetic waves generated from the semiconductor chip and grounds thesecond shield 40. For this, thefirst shield 30 is made of a conductive material, and is formed on an upper surface of thesemiconductor chip 20 and is grounded with theground circuit 15. Accordingly, since the electromagnetic waves generated from thesemiconductor chip 20 is primarily blocked by thefirst shield 30, it is possible to block the electromagnetic waves from being transferred to an adjacent semiconductor chip. In other words, it is possible to shield between semiconductor chips within the semiconductor package. - Moreover, since the
first shield 30 is connected to thesecond shield 40, thefirst shield 30 can form a double shielding structure together with thesecond shield 40, thereby improving the shielding property. - Moreover, since a wide ground area is formed by the
first shield 30 on one face of thesemiconductor chip 20, a stable ground can be provided to thesemiconductor chip 20. - Specifically, the
first shield 30 of the present embodiment can be a paste form that is stacked and hardened on the upper surface of thesemiconductor chip 20 or a conductive film form that is adhered to the upper surface of thesemiconductor chip 20. Thefirst shield 30 can be connected to theground pad 16 of theground circuit 15 bywire 35 bonding. Here, the connection between thefirst shield 30 and theground circuit 15 is not restricted to wire-bonding and can be made by various known connection methods. - Moreover, a
first shield 32 can be formed on an upper surface of asemiconductor chip 22 as an integrated part of thesemiconductor chip 22. Here, the connection between thefirst shield 32 and theground pad 17 can be made through an internal circuit of thesemiconductor chip 22. - The
second shield 40 is a part that blocks electromagnetic waves from entering and exiting between an external part and the semiconductor package. For this, thesecond shield 40 is made of a conductive material, such as metal, and covers thesubstrate 10 and thesemiconductor chip 20. Moreover, thesecond shield 40 is connected with thefirst shield 30 that is connected with theground circuit 15. Particularly, thesecond shield 40 of the present embodiment is grounded through thefirst shield 30 that is formed on the upper surface of thesemiconductor chip 20 so that it is easier to provide the space for grounding. - Specifically, in the semiconductor package of the present embodiment, a
molding 50, which seals up one surface of the substrate on which thesemiconductor chip 20 is mounted, is formed, and thesecond shield 40 can be formed by coating a conductive material on themolding 50. In addition, thesecond shield 40 can be connected to thefirst shield 30 by being connected to aconductive post 42 that is connected to thefirst shield 30. - For more uniform grounding with the
second shield 40, thefirst shield 40 can be connected with aground electrode 62 of anelectronic device 60. That is, if there is anelectronic device 60, which has aground electrode 62 connected with theground circuit 15, on thesubstrate 10, thefirst shield 40 can be connected with theground electrode 62 of theelectronic device 60. - Hereinafter, a method of manufacturing a semiconductor package in accordance with another embodiment of the present invention will be described.
-
FIG. 2 is a flow diagram of the method of manufacturing a semiconductor package in accordance with another embodiment of the present invention, andFIG. 3 toFIG. 7 are sectional views illustrating the method of manufacturing a semiconductor package in accordance with another embodiment of the present invention. - The method of manufacturing a semiconductor package in accordance with the present embodiment includes providing a substrate (S110), forming a first shield (S120), connecting a ground circuit (S130) and forming a second shield (S140).
- In the step of providing a substrate (S110), a
substrate 110, on which aground circuit 115 is formed and asemiconductor chip 120 is mounted, is provided. - The
substrate 110, which is a part on which thesemiconductor chip 120 is mounted, is formed with a circuit pattern connected to thesemiconductor chip 120 and theground circuit 115 required for shielding. Thesemiconductor chip 120 is a part in which a variety of devices are integrated to perform certain functions, and is mounted on one face of thesubstrate 110 in the semiconductor package of this embodiment. - As shown in
FIG. 3 , in the present embodiment, thesemiconductor chip 120 is mounted on one surface of thesubstrate 110, and theground circuit 115 includes ground pads needed for grounding. - In the step of forming a first shied (S120), a
conductive shield 130 is formed on an upper surface of thesemiconductor chip 120. Thefirst shield 130 is made of a conductive material, such as metal, and is formed on the upper surface of thesemiconductor chip 120 and connected with theground circuit 115. Accordingly, since the electromagnetic waves generated from thesemiconductor chip 120 is primarily blocked by thefirst shield 130, it is possible to block the electromagnetic waves from being transferred to an adjacent semiconductor chip. In other words, it is possible to shield between semiconductor chips within the semiconductor package. - As shown in
FIG. 4 , thefirst shield 130 of the present embodiment can be stacked and hardened in a paste form on the upper surface of thesemiconductor chip 120. Moreover, thefirst shield 130 can be adhered to the upper surface of the semiconductor chip as a conductive film form. - In the step of connecting a ground circuit (S130), the
first shield 130 and theground circuit 115 are connected to each other. - As shown in
FIG. 5 , in the present embodiment, thefirst shield 130 can be connected to a ground pad of theground circuit 115 bywire 135 bonding. However, the connection between thefirst shield 130 and theground circuit 115 is not restricted to wire-bonding and can be made by various known connection methods. - In the step of forming a second shield (S140), a conductive
second shield 140, which covers thesubstrate 110 and thesemiconductor chip 120 and is connected with thefirst shield 130, is formed. Thesecond shield 140 is made of a conductive material, such as metal, and covers thesubstrate 110 and thesemiconductor chip 120. Moreover, thesecond shield 140 is connected with thefirst shield 130, which is connected with theground circuit 115. Particularly, thesecond shield 140 of the present embodiment is grounded through thefirst shield 130 formed on the upper surface of thesemiconductor chip 120 so that it is easier to provide the space for grounding. - As shown in
FIG. 6 , amolding 150, which seals up one surface of the substrate on which thesemiconductor chip 120 is mounted, can be formed in the semiconductor package of the present embodiment. Here, a through-hole 152, through which the first shield is exposed, can be formed in themolding 150 in order to ground thesecond shield 140. Then, as shown inFIG. 7 , by coating a conductive material on themolding 150 and forming aconductive post 142 in the through-hole 152, thesecond shield 140 that is connected with thefirst shield 130 can be formed. - Moreover, it is also possible that, after a separate conductive post is formed on the
first shield 130 and molded, thesecond shield 140 that is connected to the conductive post is formed. - Hitherto, some embodiments of the present invention have been described. However, it shall be appreciated by anyone ordinarily skilled in the art to which the present invention pertains that there can be a variety of permutations and modifications of the present invention without departing from the technical ideas and scopes of the present invention that are disclosed in the claims appended below.
- A large number of embodiments in addition to the above-described embodiments are present within the claims of the present invention.
Claims (11)
1. A semiconductor package comprising:
a substrate having a ground circuit formed thereon;
a semiconductor chip mounted on the substrate;
a first shield formed on an upper surface of the semiconductor chip and connected with the ground circuit, the first shield being conductive; and
a second shield covering the substrate and the semiconductor chip and connected with the first shield, the second shield being conductive.
2. The semiconductor package of claim 1 , further comprising a molding sealing up the semiconductor chip mounted on the substrate,
wherein the second shield is formed on the molding.
3. The semiconductor package of claim 1 , further comprising a conductive post connecting the second shield with the first shield.
4. The semiconductor package of claim 1 , wherein the first shield and the ground circuit are connected by way of wire-bonding.
5. The semiconductor package of claim 1 , wherein the first shield is integrated in the semiconductor chip.
6. The semiconductor package of claim 1 , further comprising an electronic device having a ground electrode connected with the ground circuit,
wherein the ground electrode is connected with the second shield.
7. A method of manufacturing a semiconductor package, the method comprising:
proving a substrate having a ground circuit formed thereon and having a semiconductor chip mounted thereon;
forming a first shield on an upper surface of the semiconductor chip, the first shield being conductive;
connecting the first shield with the ground circuit; and
forming a second shield covering the substrate and the semiconductor chip and connected with the first shield, the second shield being conductive.
8. The method of claim 7 , further comprising forming a molding in such a way that the semiconductor chip mounted on the substrate is sealed up.
9. The method of claim 8 , further comprising forming a through-hole in the molding, the first shield being exposed through the through-hole,
wherein the forming of a second shield comprises forming a second shield connected with the first shield by coating a conductive material on the molding.
10. The method of claim 7 , further comprising forming a conductive post on the first shield,
wherein the forming of a second shield comprises forming a second shield connected with the conductive post.
11. The method of claim 7 , wherein the connecting of the first shield with the ground circuit comprises connecting the first shield with the ground circuit by way of wire-bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/660,655 US9048199B2 (en) | 2010-06-03 | 2012-10-25 | Semiconductor package and method of manufacturing the semiconductor package |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0052413 | 2010-06-03 | ||
| KR1020100052413A KR101070799B1 (en) | 2010-06-03 | 2010-06-03 | Semiconductor package and manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/660,655 Division US9048199B2 (en) | 2010-06-03 | 2012-10-25 | Semiconductor package and method of manufacturing the semiconductor package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20110298103A1 true US20110298103A1 (en) | 2011-12-08 |
Family
ID=45032428
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/892,411 Abandoned US20110298103A1 (en) | 2010-06-03 | 2010-09-28 | Semiconductor package and method of manufacturing the semiconductor package |
| US13/660,655 Expired - Fee Related US9048199B2 (en) | 2010-06-03 | 2012-10-25 | Semiconductor package and method of manufacturing the semiconductor package |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/660,655 Expired - Fee Related US9048199B2 (en) | 2010-06-03 | 2012-10-25 | Semiconductor package and method of manufacturing the semiconductor package |
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| Country | Link |
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| US (2) | US20110298103A1 (en) |
| KR (1) | KR101070799B1 (en) |
Cited By (5)
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| US20140291821A1 (en) * | 2011-03-07 | 2014-10-02 | Samsung Electronics Co., Ltd. | Semiconductor package having grounding member and method of manufacturing the same |
| US20170156202A1 (en) * | 2015-11-30 | 2017-06-01 | Intel Corporation | Shielding mold for electric and magnetic emi mitigation |
| US11310907B2 (en) * | 2019-11-27 | 2022-04-19 | Intel Corporation | Microelectronic package with substrate-integrated components |
| EP4572537A1 (en) * | 2023-12-15 | 2025-06-18 | Thales | Electronic module, electronic board and method for producing an electronic module |
| US12500181B2 (en) * | 2022-11-01 | 2025-12-16 | Siliconware Precision Industries Co., Ltd. | Electronic package and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10510679B2 (en) * | 2017-06-30 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with shield for electromagnetic interference |
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| US20080185699A1 (en) * | 2007-02-06 | 2008-08-07 | Advanced Semiconductor Engineering Inc. | Microelectromechanical system package and the method for manufacturing the same |
| WO2008136251A1 (en) * | 2007-05-02 | 2008-11-13 | Murata Manufacturing Co., Ltd. | Component-incorporating module and its manufacturing method |
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| JP4066362B2 (en) | 2003-08-22 | 2008-03-26 | 三菱電機株式会社 | Microwave amplifier circuit |
| JP2008258478A (en) | 2007-04-06 | 2008-10-23 | Murata Mfg Co Ltd | Electronic component device and manufacturing method thereof |
| WO2009122835A1 (en) | 2008-03-31 | 2009-10-08 | 株式会社村田製作所 | Electronic component module and method for manufacturing the electronic component module |
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2010
- 2010-06-03 KR KR1020100052413A patent/KR101070799B1/en not_active Expired - Fee Related
- 2010-09-28 US US12/892,411 patent/US20110298103A1/en not_active Abandoned
-
2012
- 2012-10-25 US US13/660,655 patent/US9048199B2/en not_active Expired - Fee Related
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|---|---|---|---|---|
| US20080185699A1 (en) * | 2007-02-06 | 2008-08-07 | Advanced Semiconductor Engineering Inc. | Microelectromechanical system package and the method for manufacturing the same |
| WO2008136251A1 (en) * | 2007-05-02 | 2008-11-13 | Murata Manufacturing Co., Ltd. | Component-incorporating module and its manufacturing method |
| US20100027225A1 (en) * | 2007-05-02 | 2010-02-04 | Murata Manufacturing Co., Ltd. | Component-embedded module and manufacturing method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140291821A1 (en) * | 2011-03-07 | 2014-10-02 | Samsung Electronics Co., Ltd. | Semiconductor package having grounding member and method of manufacturing the same |
| US20170156202A1 (en) * | 2015-11-30 | 2017-06-01 | Intel Corporation | Shielding mold for electric and magnetic emi mitigation |
| US9807866B2 (en) * | 2015-11-30 | 2017-10-31 | Intel Corporation | Shielding mold for electric and magnetic EMI mitigation |
| EP3384738A4 (en) * | 2015-11-30 | 2019-07-17 | Intel Corporation | PROTECTIVE MOLD |
| US11310907B2 (en) * | 2019-11-27 | 2022-04-19 | Intel Corporation | Microelectronic package with substrate-integrated components |
| US11641711B2 (en) | 2019-11-27 | 2023-05-02 | Intel Corporation | Microelectronic package with substrate-integrated components |
| US12500181B2 (en) * | 2022-11-01 | 2025-12-16 | Siliconware Precision Industries Co., Ltd. | Electronic package and manufacturing method thereof |
| EP4572537A1 (en) * | 2023-12-15 | 2025-06-18 | Thales | Electronic module, electronic board and method for producing an electronic module |
| FR3157053A1 (en) * | 2023-12-15 | 2025-06-20 | Thales | Electronic module, electronic card and method of manufacturing an electronic module |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101070799B1 (en) | 2011-10-06 |
| US20130045574A1 (en) | 2013-02-21 |
| US9048199B2 (en) | 2015-06-02 |
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