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US20110203735A1 - Gas injection system for etching profile control - Google Patents

Gas injection system for etching profile control Download PDF

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Publication number
US20110203735A1
US20110203735A1 US13/032,861 US201113032861A US2011203735A1 US 20110203735 A1 US20110203735 A1 US 20110203735A1 US 201113032861 A US201113032861 A US 201113032861A US 2011203735 A1 US2011203735 A1 US 2011203735A1
Authority
US
United States
Prior art keywords
gas
wafer
gas injector
edge part
jets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/032,861
Other languages
English (en)
Inventor
Seongsul SEO
Sungyong KO
Yunsook CHAE
Hwankook CHAE
Keehyun KIM
Weonmook LEE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DMS Co Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to DMS CO., LTD. reassignment DMS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAE, HWANKOOK, CHAE, YUNSOOK, KIM, KEEHYUN, KO, SUNGYONG, LEE, WEONMOOK, SEO, SEONGSUL
Publication of US20110203735A1 publication Critical patent/US20110203735A1/en
Abandoned legal-status Critical Current

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Classifications

    • H10P72/0421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Definitions

  • the etching process is a process of jetting a suitable reaction gas (e.g., CxFx series, SxFx series, hydrogen bromide (HBr), oxygen (O 2 ), argon (Ar) and the like) into the chamber or reaction furnace, thereby selectively removing desired materials from a wafer surface through a physical or chemical reaction of a plasma state and forming a specific fine circuit on a substrate surface.
  • a suitable reaction gas e.g., CxFx series, SxFx series, hydrogen bromide (HBr), oxygen (O 2 ), argon (Ar) and the like
  • the guidance duct can have a center part downward bent and formed such that its front end is positioned adjacently to an upper part of the edge part of the wafer.
  • the guidance duct may be installed such that its front end is adjacent to an upper part of the edge part of the wafer, and may be downward tilted such that the tuning gas is jetted at a constant angle from the outside direction of the wafer to the edge part.
  • a gas inlet can be formed in a lower surface of the backside gas injector, and a distribution channel can be formed in the inner part of the backside gas injector such that the gas inlet communicates with the plurality of jets, and a through-path can be formed in the ESC supporting the wafer and backside gas injector to communicate with the gas inlet.
  • FIG. 4 is a schematic diagram illustrating a construction of another exemplary embodiment of the present invention.
  • chamber 10 top gas injector 20: electrostatic chuck 25: passage 30, 40: side gas injector 31, 41: body part 32, 42, 52, 62: gas inlet 33, 43, 53, 63: distribution channel 15, 35, 45, 55, 65: jet 36, 46: guidance duct 39, 59: hollow part 50, 60: backside gas injector 110, 130, 135, 140, 145: arrow W: wafer
  • the gas injection system of the present invention includes a top gas injector 10 and a side gas injector 30 .
  • the chamber 1 is to provide a plasma reaction space isolated from the external in an etching process.
  • the chamber 1 forms a sealing space of a predetermined size therein, and can be formed in various forms according to a size of a wafer (W) or a process characteristic.
  • An ElectroStatic Chuck (ESC) 20 loading the wafer (W) for process performance is provided at a lower part of the chamber 1 . Also, an outlet (not shown) is installed to discharge out a reaction by-product such as a reaction gas, a polymer, a particle or the like.
  • the top gas injector 10 is to jet a reaction gas into the chamber 1 .
  • the top gas injector 10 has a plurality of jets 15 for jetting a reaction gas in a down direction and a lateral direction as indicated by arrow 110 such that the jetted reaction gas can be rapidly diffused into the chamber 1 and uniform plasma can be formed.
  • the reaction gas can be a variety of kinds of gases adaptive to respective etching process characteristics but, commonly, can be a gas of CxFx or SxFx series, hydrogen bromide (HBr), argon (Ar), oxygen (O 2 ), or the like.
  • HBr hydrogen bromide
  • Ar argon
  • O 2 oxygen
  • the body part 31 is installed in an outer circumference of the chamber 1 and jets a tuning gas from the lateral direction of the chamber 1 .
  • the body part 31 is formed in a panel form of a predetermined thickness, and a hollow part 39 is provided in a center part.
  • At least one or more gas inlets 32 are formed in the outside inner part of the body part 31 , and a plurality of jets 35 are arranged and formed at an equal interval around the hollow part 39 .
  • the jets 45 and the guidance ducts 46 are installed in plurality in a radial shape.
  • the exemplary embodiments of the present invention rapidly remove polymer, organic materials, foreign materials or the like from the edge part of the wafer and obtain a cleaning effect, thereby being capable of minimizing a process failure.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
US13/032,861 2010-02-23 2011-02-23 Gas injection system for etching profile control Abandoned US20110203735A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100015999A KR101092122B1 (ko) 2010-02-23 2010-02-23 에칭 프로파일 제어를 위한 가스 인젝션 시스템
KR10-2010-0015999 2010-02-23

Publications (1)

Publication Number Publication Date
US20110203735A1 true US20110203735A1 (en) 2011-08-25

Family

ID=44463544

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/032,861 Abandoned US20110203735A1 (en) 2010-02-23 2011-02-23 Gas injection system for etching profile control

Country Status (4)

Country Link
US (1) US20110203735A1 (zh)
KR (1) KR101092122B1 (zh)
CN (1) CN102162099B (zh)
TW (1) TWI446441B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130014895A1 (en) * 2011-07-08 2013-01-17 Tokyo Electron Limited Substrate processing apparatus
US9362137B2 (en) 2014-08-18 2016-06-07 Samsung Electronics Co., Ltd. Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device
JP2016526279A (ja) * 2013-04-30 2016-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 空間的に分散されたガス流路を有する流量制御ライナー
US10443130B2 (en) * 2014-12-18 2019-10-15 Tokyo Electron Limited Plasma processing apparatus with shower plate having protrusion for suppressing film formation in gas holes of shower plate
US11342164B2 (en) * 2011-12-16 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. High density plasma chemical vapor deposition chamber and method of using

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* Cited by examiner, † Cited by third party
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US9961323B2 (en) 2012-01-30 2018-05-01 Samsung Electronics Co., Ltd. Method and apparatus for multiview video encoding based on prediction structures for viewpoint switching, and method and apparatus for multiview video decoding based on prediction structures for viewpoint switching
CN105529283B (zh) * 2014-09-29 2020-06-30 盛美半导体设备(上海)股份有限公司 晶圆的双面气相刻蚀装置
CN105702600A (zh) * 2014-11-28 2016-06-22 中国科学院微电子研究所 一种半导体设备进气装置
US9966270B2 (en) * 2015-03-31 2018-05-08 Lam Research Corporation Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity
JP6820736B2 (ja) * 2016-12-27 2021-01-27 東京エレクトロン株式会社 基板処理方法および基板処理装置
US20200258718A1 (en) * 2019-02-07 2020-08-13 Mattson Technology, Inc. Gas Supply With Angled Injectors In Plasma Processing Apparatus
CN114613655B (zh) * 2020-12-03 2024-10-29 中国科学院微电子研究所 一种旋转喷洒装置、半导体反应腔室及蚀刻机
CN112466809B (zh) * 2021-02-02 2021-06-08 北京中硅泰克精密技术有限公司 半导体工艺设备及承载装置

Citations (20)

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US5105761A (en) * 1989-10-19 1992-04-21 Commissariat A L'energie Atomique Diffusion plasma-assisted chemical treatment apparatus
US5338363A (en) * 1991-12-13 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US5851294A (en) * 1995-10-23 1998-12-22 Watkins-Johnson Company Gas injection system for semiconductor processing
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
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US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US20050092245A1 (en) * 2003-11-03 2005-05-05 Ahn-Sik Moon Plasma chemical vapor deposition apparatus having an improved nozzle configuration
US20060066247A1 (en) * 2004-06-21 2006-03-30 Tokyo Electron Limited Plasma processing apparatus and method
US20070193688A1 (en) * 2006-02-21 2007-08-23 Lam Research Corporation Process tuning gas injection from the substrate edge
US7303141B2 (en) * 2003-04-09 2007-12-04 Samsung Electronics Co., Ltd. Gas supplying apparatus
US20080073324A1 (en) * 2004-07-09 2008-03-27 Sekisui Chemical Co., Ltd. Method For Processing Outer Periphery Of Substrate And Apparatus Thereof
US7413627B2 (en) * 1996-05-13 2008-08-19 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US20090057269A1 (en) * 2007-09-05 2009-03-05 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US20090221149A1 (en) * 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system
US7632356B2 (en) * 2005-03-16 2009-12-15 Ngk Insulators, Ltd. Gas providing member and processing device
US7887669B2 (en) * 2006-11-10 2011-02-15 Hitachi High-Technologies Corporation Vacuum processing apparatus

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TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
JP4336680B2 (ja) * 2006-01-10 2009-09-30 株式会社アルバック 反応性イオンエッチング装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105761A (en) * 1989-10-19 1992-04-21 Commissariat A L'energie Atomique Diffusion plasma-assisted chemical treatment apparatus
US5338363A (en) * 1991-12-13 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
US6375750B1 (en) * 1995-07-10 2002-04-23 Applied Materials, Inc. Plasma enhanced chemical processing reactor and method
US5851294A (en) * 1995-10-23 1998-12-22 Watkins-Johnson Company Gas injection system for semiconductor processing
US7413627B2 (en) * 1996-05-13 2008-08-19 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6270862B1 (en) * 1996-06-28 2001-08-07 Lam Research Corporation Method for high density plasma chemical vapor deposition of dielectric films
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6206976B1 (en) * 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
US7303141B2 (en) * 2003-04-09 2007-12-04 Samsung Electronics Co., Ltd. Gas supplying apparatus
US20050092245A1 (en) * 2003-11-03 2005-05-05 Ahn-Sik Moon Plasma chemical vapor deposition apparatus having an improved nozzle configuration
US20060066247A1 (en) * 2004-06-21 2006-03-30 Tokyo Electron Limited Plasma processing apparatus and method
US20080073324A1 (en) * 2004-07-09 2008-03-27 Sekisui Chemical Co., Ltd. Method For Processing Outer Periphery Of Substrate And Apparatus Thereof
US7632356B2 (en) * 2005-03-16 2009-12-15 Ngk Insulators, Ltd. Gas providing member and processing device
US20070193688A1 (en) * 2006-02-21 2007-08-23 Lam Research Corporation Process tuning gas injection from the substrate edge
US7887669B2 (en) * 2006-11-10 2011-02-15 Hitachi High-Technologies Corporation Vacuum processing apparatus
US20090057269A1 (en) * 2007-09-05 2009-03-05 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US7879250B2 (en) * 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US20090221149A1 (en) * 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system

Non-Patent Citations (1)

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Title
Mayumi Block et al., "The Impact of Electrode Gap and Gas Injection on Plasma Etch,"BEOL Dielectric Etching, Plasma Applications Group - Proceedings, Northern California Chapter of American Vacuum Society (NCCAVS), 11 June 2009, Slides 1-22, (available online at: http://www.avsusergroups.org/pag_pdfs/2009_6block.pdf). *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130014895A1 (en) * 2011-07-08 2013-01-17 Tokyo Electron Limited Substrate processing apparatus
US9460893B2 (en) * 2011-07-08 2016-10-04 Tokyo Electron Limited Substrate processing apparatus
US11342164B2 (en) * 2011-12-16 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. High density plasma chemical vapor deposition chamber and method of using
US12020905B2 (en) 2011-12-16 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of using high density plasma chemical vapor deposition chamber
JP2016526279A (ja) * 2013-04-30 2016-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 空間的に分散されたガス流路を有する流量制御ライナー
US9362137B2 (en) 2014-08-18 2016-06-07 Samsung Electronics Co., Ltd. Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device
US10443130B2 (en) * 2014-12-18 2019-10-15 Tokyo Electron Limited Plasma processing apparatus with shower plate having protrusion for suppressing film formation in gas holes of shower plate

Also Published As

Publication number Publication date
KR20110096649A (ko) 2011-08-31
KR101092122B1 (ko) 2011-12-12
CN102162099B (zh) 2013-06-26
TW201130041A (en) 2011-09-01
TWI446441B (zh) 2014-07-21
CN102162099A (zh) 2011-08-24

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Legal Events

Date Code Title Description
AS Assignment

Owner name: DMS CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SEO, SEONGSUL;KO, SUNGYONG;CHAE, YUNSOOK;AND OTHERS;REEL/FRAME:025849/0058

Effective date: 20110201

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION