US20100178209A1

US20100178209A1 - Hydrogen Sensor

Info

Publication number: US20100178209A1
Application number: US12/602,984
Authority: US
Inventors: Naoki Uchiyama; Kazuki Yoshimura
Original assignee: National Institute of Advanced Industrial Science and Technology AIST; Atsumitec Co Ltd
Current assignee: National Institute of Advanced Industrial Science and Technology AIST; Atsumitec Co Ltd
Priority date: 2007-06-04
Filing date: 2008-05-28
Publication date: 2010-07-15
Also published as: CA2688568A1; JP5164435B2; CA2688568C; EP2154528A1; CN101680863B; JP2008298724A; WO2008149752A1; EP2154528B1; EP2154528A4; KR101470669B1; KR20100025513A; CN101680863A

Abstract

In a hydrogen sensor (10 a, 10 b, 10 c, 10 d), a thin film layer (12) is formed over a substrate (11) and a buffer layer (13) is formed over the thin film layer (12). Further, over the buffer layer (13) is formed a catalyst layer (14) which, by being contacted by hydrogen gas, hydrogenates the thin film layer (12), thereby changing optical reflectance of the thin film layer (12). A constituent of the thin film layer (12) diffusing into the catalyst layer (14) combines with a constituent that has diffused from the buffer layer (13) into the catalyst layer (14), so that oxidation of the catalyst film layer (14) is prevented. Consequently, oxidation of the catalyst layer (14), etc. caused by repetition of hydrogenation of the thin film layer (12) is prevented, and therefore, decrease in hydrogen detection sensitivity of the hydrogen sensor (10 a, 10 b, 10 c, 10 d) is restrained.

Description

TECHNICAL FIELD

The present invention relates to a hydrogen sensor for detecting hydrogen gas.

BACKGROUND ART

From a viewpoint of preventing carbon dioxide emissions into the atmosphere, hydrogen has been attracting attention as an energy source. There is, however, a risk of explosion if hydrogen gas leaks into an atmosphere. Thus, the development of a hydrogen sensor capable of quickly detecting leaked hydrogen gas has been being advanced. As such hydrogen sensor, a semiconductor sensor using tin oxide has been developed. The operating temperature of this semiconductor sensor is, however, as high as about 400° C. Thus, in using this semiconductor sensor, it is necessary to take a preventive measure against explosion. Consequently, a hydrogen gas leak detector using this semiconductor sensor has a drawback that it is complicated in structure.
In this situation, there have been developed hydrogen sensors in which a thin film layer of a magnesium-nickel alloy or the like formed on the surface of a substrate of glass or the like is quickly hydrogenated in the presence of hydrogen gas under the action of a catalyst layer of palladium or the like, and thus undergoes changes in material properties. A hydrogen sensor of this type is disclosed in Unexamined Japanese Patent Publication No. 2005-83832 (hereinafter referred to as Patent Document 1), for example. The hydrogen sensor disclosed in Patent Document 1 can detect hydrogen gas that has leaked into an atmosphere by detecting a change in optical reflectance (hereinafter, sometimes referred to simply as “reflectance”) of the thin film layer caused by hydrogenation. The hydrogen sensor disclosed in Patent Document 1, in which the thin film layer is reversibly hydrogenated at normal temperatures, has also an advantage that it can detect leaked hydrogen gas safely and quickly.
In the hydrogen sensor disclosed in Patent Document 1, however, the catalyst layer, which is directly exposed to the atmosphere, is prone to oxidation, because magnesium, which is a constituent of the thin film layer, diffuses, deposits or the like (hereinafter, sometimes the word “diffuse” is used to cover this meaning) in the catalyst layer, as the hydrogenation and dehydrogenation are repeated (hereinafter, wording “repetition of hydrogenation and dehydrogenation” is sometimes simplified into wording “repetition of hydrogenation”). Thus, there is a risk that the oxidation of the catalyst layer entails oxidation of the thin film layer, resulting in a smaller change in reflectance, and therefore, a decrease in leaked hydrogen gas detection sensitivity of the thin film layer (which means deterioration of the hydrogen sensor).
FIGS. 8A and 8B are diagrams for explaining an example of deterioration of a hydrogen sensor including a thin film layer of a magnesium-nickel alloy and a catalyst layer of palladium formed over a glass substrate, obtained by XPS (X-ray photoelectron spectroscopy). In the diagrams, etching time (in sec) plotted on the horizontal axis corresponds to depth from the surface of the palladium catalyst layer, and the etching time of 250 sec corresponds to the depth of about 50 nm (the origin, or zero corresponds to the surface of the palladium catalyst layer). On the vertical axis, atomic percentage (hereinafter, sometimes the symbol “%” is used in place of this term) is plotted.
FIG. 8A shows a result of measurement on the hydrogen sensor before undergoing repetition of hydrogenation. FIG. 8A shows that at the surface of the catalyst layer, palladium (Pd) is present at about 98%, and magnesium (Mg) and nickel (Ni) are at about 0%, respectively. Incidentally, silicon (Si) is contained in glass constituting the substrate, and the other substances are omitted from the diagrams. Nickel (Ni) is roughly at 0% over a range of etching times from 0 to 40 sec.
FIG. 8B shows a result of measurement on the hydrogen sensor after undergoing repetition of hydrogenation. FIG. 8B shows that at the surface of the catalyst layer, palladium (Pd) has reduced to slightly less than 60%, while magnesium (Mg) has increased to slightly less than 40%. Nickel (Ni) is roughly at 0% over a range of etching times from 0 to 60 sec, which means that in this range, magnesium (Mg) cannot combine with nickel (Ni) by inter-atomic bonding or the like, for example.
Thus, from the result of measurement shown in FIG. 8B, it is recognized that repetition of hydrogenation in the hydrogen sensor changed the material properties of the catalyst layer and the thin film layer, that magnesium (Mg) was diffused in the catalyst layer and thereby the catalyst layer is prone to oxidation, and that reduction in palladium (Pd) in the catalyst layer resulted in degraded catalysis. Incidentally, silicon (Si) is omitted from the diagram of FIG. 8B.

DISCLOSURE OF THE INVENTION

In order to solve the above-mentioned problem, the present invention provides a hydrogen sensor comprising a substrate, a thin film layer formed over the substrate, a buffer layer formed over the thin film layer, and a catalyst layer formed over the buffer layer, which, by being contacted by hydrogen gas in an atmosphere, hydrogenates the thin film layer, thereby changing optical reflectance of the thin film layer, wherein the buffer layer contains a constituent that combines with a constituent of the thin film layer which diffuses from the thin film layer into the catalyst layer, thereby restraining oxidation of the catalyst layer.
In other words, the characteristic feature of this hydrogen sensor is that between the catalyst layer and the thin film layer, there is formed a buffer layer containing a constituent that combines with a constituent of the thin film layer which diffuses from the thin film layer into the catalyst layer. Thus, in this hydrogen sensor, the constituent of the thin film layer diffuses into the buffer layer and further diffuses into the catalyst layer, together with the constituent of the buffer layer, and both constituents combine with each other by inter-atomic bonding or the like, for example, within the catalyst layer, at the surface of the catalyst layer and elsewhere. The elements combined in this manner are less prone to oxidation than uncombined elements. Thus, the oxidation of the catalyst layer after repetition of hydrogenation is restrained, so that the oxidation of the thin film layer is also restrained. Here, the buffer layer may be formed of either a single constituent (one metal element or the like, for example) or a plurality of constituents (an alloy, for example).
Specifically, the thin film layer may be formed of a magnesium alloy or magnesium, for example, while the catalyst layer may be formed to contain palladium or platinum, for example. The thin film layer formed of such substance can undergo a change in optical reflectance by reversible hydrogenation. The catalyst layer may be formed of any of palladium, platinum, a palladium alloy and a platinum alloy.
More specifically, the thin film layer may be formed of a magnesium-nickel alloy, a magnesium-titanium alloy, a magnesium-niobium alloy, a magnesium-cobalt alloy or a magnesium-manganese alloy, for example. The thin film layer formed of such substance can more quickly undergo reversible hydrogenation.
When the thin film layer is formed of a magnesium alloy or magnesium, the buffer layer is formed to contain a constituent that combines with magnesium that diffuses from the thin film layer into the catalyst layer, thereby restraining the oxidation of the catalyst layer attributed to the magnesium.
In this case, the buffer layer may, specifically, be formed to contain nickel, titanium, niobium or vanadium, for example.
For an improvement in hydrogen gas detection sensitivity, it is desirable that a constituent of the catalyst layer be diffused in the thin film layer. There is however a possibility that, while preventing the oxidation of the catalyst layer as mentioned above, the buffer layer prevents the constituent of the catalyst layer from diffusing into the thin film layer, resulting in the thin film layer difficult to hydrogenate.
However, if, in the above hydrogen sensor, the thickness of the buffer layer is in a preferable range of 1 to 5 nm, such phenomenon hardly occurs while the oxidation of the catalyst layer is restrained by the buffer layer.
Preferably, in the above hydrogen sensor, as another preferable measure against the above phenomenon, a thin film activation layer may be interposed between the substrate and the thin film layer and/or between the buffer layer and the thin film layer. The thin film activation layer contains a constituent which, by being contacted by hydrogen, hydrogenates the thin film layer, thereby changing the optical reflectance of the thin film layer.
In the hydrogen sensor structured as described above, even if the buffer layer prevents the constituent of the catalyst layer from diffusing in the thin film layer, the above constituent of the thin film activation layer diffuses in the thin film layer and promotes the hydrogenation and dehydrogenation of the thin film layer, resulting in a further improved hydrogen detection sensitivity of the hydrogen sensor. The thin film activation layer may be formed of either a single constituent (one metal element or the like, for example) or a plurality of constituents (an alloy, for example), as long as it contains a constituent which, by being contacted by hydrogen, hydrogenates the thin film layer, thereby changing the optical reflectance of the thin film layer.
Specifically, in the above hydrogen sensor, the thin film activation layer may be formed to contain the same constituent as the catalyst layer contains. In this case, the constituent having the same catalytic function as the catalyst layer diffuses from the thin film activation layer into the thin film layer, and promotes the hydrogenation and dehydrogenation of the thin film layer. Consequently, desirable hydrogen gas detection sensitivity is maintained, while the oxidation of the catalyst layer is restrained by the buffer layer.
More specifically, in the above hydrogen sensor, the thin film activation layer may be formed to contain palladium or platinum. In this case, palladium or platinum having a catalytic function diffuses from the thin film activation layer into the thin film layer. Consequently, desirable hydrogen gas detection sensitivity is maintained, while the oxidation of the catalyst layer is restrained by the buffer layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing schematic cross-sectional structure of a hydrogen sensor according to a first embodiment of the present invention;

FIG. 2A is a graph showing a result of XPS measurement on the hydrogen sensor of FIG. 1 before undergoing repetition of hydrogenation;

FIG. 2B is a graph showing a result of XPS measurement on the hydrogen sensor of FIG. 1 after undergoing hydrogenation 60 times;

FIG. 3A is a graph showing a result of measurement on change in transmittance of a hydrogen sensor including no buffer layer, caused by repetition of hydrogenation;

FIG. 3B is a graph showing a result of measurement on change in transmittance of a hydrogen sensor including a buffer layer, caused by repetition of hydrogenation;

FIG. 4A is a graph showing a result of XPS measurement on a hydrogen sensor including no buffer layer;

FIG. 4B is a graph showing a result of XPS measurement on a hydrogen sensor including a buffer layer;

FIG. 5 is a diagram showing schematic cross-sectional structure of a hydrogen sensor according to a second embodiment of the present invention;

FIG. 6 is a diagram showing schematic cross-sectional structure of a hydrogen sensor as a first variation of the hydrogen sensor shown in FIG. 5;

FIG. 7 is a diagram showing schematic cross-sectional structure of a hydrogen sensor as a second variation of the hydrogen sensor shown in FIG. 5;

FIG. 8A is a graph showing a result of XPS measurement on a conventional hydrogen sensor before undergoing repetition of hydrogenation; and

FIG. 8B is a graph showing a result of XPS measurement on the conventional hydrogen sensor after undergoing repetition of hydrogenation.

BEST MODE OF CARRYING OUT THE INVENTION

With reference to the drawings, embodiments of the present invention will be described below.
First, referring to FIGS. 1 to 4B, a hydrogen sensor according to a first embodiment of the present invention will be described in details.
The hydrogen sensor 10 a shown in FIG. 1 includes a substrate 11 of glass. On the surface 11 a of the substrate 11, a thin film layer 12 of elemental composition MgNix (0≦x<0.6) is formed. On the surface 12 a of the thin film layer 12, a buffer layer 13 of titanium (Ti) is formed. Further, on the surface 13 a of the buffer layer 13, a catalyst layer 14 of palladium (Pd) is formed. Here, the thickness of the thin film layer 12 is 40 nm, the thickness of the buffer layer 13 is 2 nm, and the thickness of the catalyst layer 14 is 4 nm.
The buffer layer 13 less than 1 nm in thickness results in a reduction in the amount of titanium (Ti) or the like diffusing from the buffer layer 13 into the catalyst layer 14, and therefore difficulty in preventing the oxidation of the catalyst layer 14. The buffer layer 13 more than 5 nm in thickness, on the other hand, makes it difficult for a constituent of the catalyst layer 14, such as palladium (Pd), to diffuse into the thin film layer 12, and therefore makes hydrogenation of the thin film layer 12 difficult, which possibly results in a decrease in hydrogen gas detection sensitivity. In the hydrogen sensor 10 a, the thickness of the buffer layer 13 is therefore determined by taking account of the balance between the beneficial and adverse effects of the buffer layer 13, i.e., prevention of oxidation of the catalyst layer 14 and decrease in hydrogen gas detection sensitivity.
The buffer layer 13 may be formed of a substance capable of combining with magnesium (Mg) that diffuses from the thin film layer 12 into the catalyst layer 14 to thereby restrain the oxidation of the catalyst layer 14 attributed to the magnesium (Mg). For example, the buffer layer 13 may be formed of nickel, niobium, vanadium or the like. Preferably, the thickness of the catalyst layer 14 may be within a range of 1 nm to 100 nm.
The thin film layer 12, the buffer layer 13 and the catalyst layer 14 can each be formed by sputtering, vacuum evaporation, electron beam evaporation, plating or the like. The substrate 11 may be an acrylic resin sheet, a polyethylene sheet (polyethylene film) or the like.
When exposed to an atmosphere with a hydrogen concentration of about 100 ppm to 1% or more, the hydrogen sensor 10 a structured as described above exhibits a visible (visualizable) change in optical reflectance of the thin film layer 12, quickly, namely in several to ten sec or so.
FIG. 2A is a graph showing a result of XPS measurement on the hydrogen sensor 10 a before undergoing repetition of hydrogenation, and FIG. 2B is a graph showing a result of XPS measurement on the hydrogen sensor 10 a after undergoing hydrogenation 60 times. As the measurement conditions, interval of hydrogenation is set to 5 minutes, and ambient temperature is set to 25° C.
FIG. 2A shows that at the surface 14 a of the catalyst layer 14 (etching time 0 sec), palladium (Pd) is present at about 95%, and nickel (Ni) and magnesium (Mg) are at 0%, respectively. Magnesium (Mg) is at about 0% over a range of etching times from 0 to about 20 sec, and increases to slightly more than 60% at the etching time about 60 sec. Palladium (Pd) reduces to about 20% at the etching time 50 sec, and then gently reduces to 0% at the etching time about 160 sec. Since the etching time 250 sec corresponds to the depth of about 50 nm, the etching time 20 sec corresponds to the depth of about 4 nm.
FIG. 2B shows that at the surface 14 a of the catalyst layer 14, palladium (Pd) is present at about 99%, and nickel (Ni) and magnesium (Mg) are at 0%, respectively. Magnesium (Mg) is at about 0% over a range of etching times from 0 to about 20 sec, and increases to slightly more than 60% at the etching time about 60 sec. Palladium (Pd) reduces to about 20% at the etching time about 60 sec, and then gently reduces to 0% at the etching time about 180 sec.
Thus, the diagram shows that in spite of 60 times of hydrogenation, magnesium (Mg) constituting the thin film layer 12 hardly diffuses to the catalyst layer 14, so that very little magnesium (Mg) is present in the region of etching times from 0 to about 20 sec. This means that the oxidation of the catalyst layer 14 can be prevented. Both before and after the repetition of hydrogenation, the maximum atomic percentage of titanium (Ti) is present in the region of etching times from 25 to about 50 sec, which means that the buffer layer 13 is stable. Further, both before and after the repetition of hydrogenation, magnesium (Mg) increases from the etching time about 20 sec, which means that the thin film layer 13 is rather stable. Palladium (Pd) in the catalyst layer 14 does not exhibit a remarkable change, which means the catalyst layer 14 is also stable.
Thus, it is recognized that, in the hydrogen sensor 10 a, in spite of repetition of hydrogenation, the buffer layer 13 prevents the oxidation of the catalyst layer 14, and therefore, prevents a decrease in hydrogen detection sensitivity caused by the oxidation of the catalyst layer 14. Incidentally, Si in FIG. 2A is silicon contained in glass constituting the substrate 11. Silicon (Si) is omitted from the diagram of FIG. 2B.
FIG. 3A is a graph showing change in transmittance caused by repetition of hydrogenation, or in other words, deterioration in hydrogen detection sensitivity, for a hydrogen sensor including no buffer layer 13. FIG. 3B, on the other hand, is a graph showing change in transmittance caused by repetition of hydrogenation, or deterioration in hydrogen detection sensitivity, for the hydrogen sensor 10 a including the buffer layer 13. Here, the number of times that hydrogenation is repeated is plotted on the horizontal axis, while the transmittance of the hydrogen sensor 10 a is plotted on the vertical axis. The transmittance of the hydrogen sensor 10 a is, for example the ratio of the amount of light exiting from the catalyst layer 14 to the amount of light falling on the rear side 11 b of the substrate 11 at right angles, expressed in percentage.
The hydrogen sensor with the thin film layer not hydrogenated (dehydrogenated) exhibits low transmittance (thus high reflectance), and the transmittance increases (reflectance decreases) with hydrogenation of the thin film layer. Since the width of variation of transmittance with variation of hydrogen gas concentration (hereinafter, sometimes referred to simply as “variation width of transmittance”) determines the hydrogen detection sensitivity of the hydrogen sensor, it is desired that the variation width of transmittance stay constant. Further, for stable detection of leaked hydrogen gas present at low concentrations, it is desired that the transmittance with the thin film layer not hydrogenated stay constant. Thus, in the hydrogen sensor, it is desired that the variation width of transmittance as well as the transmittance with the thin film layer not hydrogenated stay constant.
As FIG. 3A shows, in the hydrogen sensor including no buffer layer 13, as the hydrogenation is repeated, the transmittance with the thin film layer hydrogenated decreases and the variation width of transmittance also decreases. After the repetition of hydrogenation reaches 130 times or so, also the transmittance with the thin film layer not hydrogenated changes.
In contrast, as FIG. 3B shows, in the hydrogen sensor 10 a including the buffer layer 13, until the repetition of hydrogenation reaches about 450 times, the transmittance with the thin film layer 12 hydrogenated, the variation width of transmittance, and the transmittance with the thin film layer 12 not hydrogenated all change little. Thus, compared with the hydrogen sensor including no buffer layer 13, the hydrogen sensor 10 a undergoes only a very small decrease in hydrogen detection sensitivity and can detect leaked hydrogen gas stably. Thus it can be said that it is a hydrogen sensor with extremely high durability and detection sensitivity.
FIG. 4A is a graph showing a result of XPS measurement on a hydrogen sensor including no buffer layer 13 before undergoing repetition of hydrogenation. FIG. 4B is a graph showing a result of XPS measurement on a hydrogen sensor including a buffer layer 13 of nickel (Ni), in place of titanium (Ti) in the hydrogen sensor 10 of FIG. 1, before undergoing repetition of hydrogenation.
As seen in FIG. 4A, nickel (Ni) is at almost 0% over a range of etching times from 0 to 25 sec. This means that in the hydrogen sensor including no buffer layer 13, only magnesium contained in the thin film layer 12 diffuses into the catalyst layer 14 and nickel (Ni) does not diffuse toward the surface 14 a of the catalyst layer 14. Consequently, it can be said that the catalyst layer 14 is oxidized as magnesium (Mg) in the catalyst layer 14, not able to combine with nickel (Ni), is oxidized.
In contrast, as seen in FIG. 4B, in the hydrogen sensor including the buffer layer 13 of nickel (Ni), nickel (Ni) is present at about 2% at the etching time 0 sec, and at about 7% at the etching time about 25 sec. This means that nickel (Ni) has diffused from the thin film layer 12 into the catalyst layer 14. Consequently, even when the repetition of hydrogenation causes magnesium (Mg) contained in the thin film layer 12 to diffuse into the catalyst layer 14, magnesium (Mg) diffused in the catalyst layer 14 can combine with nickel (Ni), so that oxidation of the catalyst layer 14 is prevented. Thus, also the buffer layer 13 formed of nickel (Ni) results in improved durability of the hydrogen sensor 10 a.
Next, referring to FIG. 5, a hydrogen sensor according to a second embodiment of the present invention will be described in detail, where constructional elements similar in function to those of the first embodiment will be assigned the same reference marks, and the description of those constructional elements will be omitted.
In the hydrogen sensor 10 b shown in FIG. 5, a first thin film activation layer 15 p is formed on the surface 11 a of a substrate 11, and a thin film layer 12 is formed on the surface 15 a of the first thin film activation layer 15 p. Further, a buffer layer 13 is formed on the surface 12 a of the thin film layer 12, and a catalyst layer 14 is formed on the surface 13 a of the buffer layer 13. In other words, the hydrogen sensor 10 b is formed by further interposing a first thin film activation layer 15 p between the substrate 11 and the thin film layer 12 in the structure of the hydrogen sensor 10 a according to the first embodiment.
The substrate 11, the thin film layer 12, the buffer layer 13 and the catalyst layer 14 of the hydrogen sensor 10 b are similar in elemental composition as well as formation to those of the hydrogen sensor 10 a according to the first embodiment. The first thin film activation layer 15 p contains palladium (Pd) that can act as a catalyst in the catalyst layer 14. Like the hydrogen sensor 10 a, the hydrogen sensor 10 b includes the buffer layer 13, which can prevent the oxidation of the catalyst layer 14 and the thin film layer 12, thereby preventing a decrease in hydrogen detection sensitivity. In the hydrogen sensor 10 b, further, palladium (Pd) diffuses from the first thin film activation layer 15 p interposed between the substrate 11 and the thin film layer 12 into the thin film layer 12 and promotes hydrogenation/dehydrogenation of the thin film layer 12. This leads to an improvement in hydrogen detection sensitivity of the hydrogen sensor 10 b. Thus, in the hydrogen sensor 10 b, while the buffer layer 13 prevents the oxidation of the catalyst layer 14 and the thin film layer 12, the first thin film activation layer 15 p compensates for the decrease in hydrogen detection sensitivity attributed to the presence of the buffer layer 13.
In the present embodiment, the thickness of the first thin film activation layer 15 p is 2 nm. The first thin film activation layer 15 p is however provided to make palladium (Pd) diffuse into the thin film layer 12, thereby promoting the hydrogenation of the thin film layer 12. Thus, as long as this object can be achieved, the thickness of the first thin film activation layer 15 p is not restricted to that in the present embodiment. Further, since the first thin film activation layer 15 p is provided to make a metal acting as a catalyst diffuse into the thin film layer 12, the constituent of the first thin film activation layer 15 p is not restricted to palladium (Pd).
Next, referring to FIG. 6, a hydrogen sensor which is a variation of the second embodiment will be described in detail, where constructional elements similar in function to those of the preceding embodiments will be assigned the same reference marks, while the description of those constructional elements will be omitted.
The hydrogen sensor 10 c shown in FIG. 6 is formed by further interposing a second thin film activation layer 15 s between the buffer layer 13 and the thin film layer 12 in the structure of the hydrogen sensor 10 a according to the first embodiment. The second thin film activation layer 15 s is formed to contain palladium (Pd). In the hydrogen sensor 10 c, palladium (Pd) diffuses from the second thin film activation layer 15 s into the thin film layer 12 and promotes hydrogenation dehydrogenation of the thin film layer 12. Thus, in the hydrogen sensor 10 c, while the buffer layer 13 prevents the oxidation of the catalyst layer 14 and the thin film layer 12, and the second thin film activation layer 15 s compensates for the decrease in hydrogen detection sensitivity attributed to the presence of the buffer layer 13. Preferably, in the present variation, the thickness of the second thin film activation layer 15 s may be in the range of 1 to 5 nm for the same reason as stated with respect to the buffer layer 13.
The hydrogen sensor 10 d shown in FIG. 7 includes both a first thin film activation layer 15 p, as included in the hydrogen sensor 10 b according to the second embodiment, and a second thin film activation layer 15 s, as included in the hydrogen sensor 10 c described as a variation thereof. In this hydrogen sensor 10 d, palladium (Pd) diffuses from the two thin film activation layers into the thin film layer 12. Thus, in this hydrogen sensor 10 d, hydrogenation/dehydrogenation of the thin film layer 12 is more promoted, compared with the hydrogen sensors 10 b and 10 c. Consequently, the hydrogen sensor 10 d has a further improved hydrogen detection sensitivity.
It is without saying that the hydrogen sensor according to the present invention is not restricted to the above-described embodiments, but can be modified appropriately without departing from the spirit and scope of the present invention.

Claims

1. A hydrogen sensor, comprising:

a substrate;

a thin film layer formed over the substrate;

a buffer layer formed over the thin film layer with a thin film activation layer interposed between the buffer layer and the thin film layer; and

a catalyst layer formed over the buffer layer, which, by being contacted by hydrogen gas in an atmosphere, hydrogenates the thin film layer, thereby changing optical reflectance of the thin film layer, wherein

the buffer layer contains a constituent that combines with a constituent of the thin film layer which diffuses from the thin film layer into the catalyst layer, thereby restraining oxidation of the catalyst layer, and

the thin film activation layer contains a constituent which, by being contacted by hydrogen, hydrogenates the thin film layer, thereby changing optical reflectance of the thin film layer.

2. The hydrogen sensor according to claim 1, wherein

the thin film layer is formed of a magnesium alloy or magnesium, and

the catalyst layer is formed to contain palladium or platinum.

3. The hydrogen sensor according to claim 2, wherein the thin film layer is formed of a magnesium-nickel alloy, a magnesium-titanium alloy, a magnesium-niobium alloy, a magnesium-cobalt alloy or a magnesium-manganese alloy.

4. The hydrogen sensor according to claim 2, wherein the buffer layer contains a constituent that combines with magnesium diffusing from the thin film layer into the catalyst layer, thereby restraining the oxidation of the catalyst layer attributed to the magnesium.

5. The hydrogen sensor according to claim 4, wherein the buffer layer is formed to contain nickel, titanium, niobium or vanadium.

6. The hydrogen sensor according to claim 1, wherein the thickness of the buffer layer is in a range of 1 to 5 nm.

7. (canceled)

8. (canceled)

9. (canceled)

10. (canceled)

11. The hydrogen sensor according to claim 1, wherein the thin film activation layer is formed to contain the same constituent as the catalyst layer contains.

12. The hydrogen sensor according to claim 11, wherein the thin film activation layer is formed to contain palladium or platinum.

13. The hydrogen sensor according to claim 1, wherein

the thin film layer is formed over the substrate with a first thin film activation layer interposed between the thin film layer and the substrate,

the buffer layer is formed over the thin film layer with a second thin film activation layer interposed between the buffer layer and the thin film layer, and

the first and second thin film activation layers each contain a constituent which, by being contacted by hydrogen, hydrogenates the thin film layer, thereby changing optical reflectance of the thin film layer.

14. The hydrogen sensor according to claim 13, wherein the first and second thin film activation layers are formed to contain the same constituent as the catalyst layer contains.

15. The hydrogen sensor according to claim 14, wherein the first and second thin film activation layers are formed to contain palladium or platinum.