US20100121100A1 - Supported palladium-gold catalysts and preparation of vinyl acetate therewith - Google Patents
Supported palladium-gold catalysts and preparation of vinyl acetate therewith Download PDFInfo
- Publication number
- US20100121100A1 US20100121100A1 US12/291,628 US29162808A US2010121100A1 US 20100121100 A1 US20100121100 A1 US 20100121100A1 US 29162808 A US29162808 A US 29162808A US 2010121100 A1 US2010121100 A1 US 2010121100A1
- Authority
- US
- United States
- Prior art keywords
- catalyst
- palladium
- support
- gold
- titanium dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000003054 catalyst Substances 0.000 title claims abstract description 73
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 28
- 239000010931 gold Substances 0.000 title claims abstract description 28
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 55
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 28
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 28
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 22
- 150000002344 gold compounds Chemical class 0.000 claims abstract description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001354 calcination Methods 0.000 claims abstract description 11
- 150000002941 palladium compounds Chemical class 0.000 claims abstract description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052783 alkali metal Inorganic materials 0.000 claims description 11
- 150000001340 alkali metals Chemical class 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 9
- 239000005977 Ethylene Substances 0.000 claims description 9
- 150000003868 ammonium compounds Chemical class 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229940080262 sodium tetrachloroaurate Drugs 0.000 claims description 3
- 229910003803 Gold(III) chloride Inorganic materials 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- RJHLTVSLYWWTEF-UHFFFAOYSA-K gold trichloride Chemical compound Cl[Au](Cl)Cl RJHLTVSLYWWTEF-UHFFFAOYSA-K 0.000 claims description 2
- GPNDARIEYHPYAY-UHFFFAOYSA-N palladium(ii) nitrate Chemical compound [Pd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O GPNDARIEYHPYAY-UHFFFAOYSA-N 0.000 claims description 2
- 230000003197 catalytic effect Effects 0.000 abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 6
- 238000006137 acetoxylation reaction Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 238000005470 impregnation Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- HVAMZGADVCBITI-UHFFFAOYSA-M pent-4-enoate Chemical compound [O-]C(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-M 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 235000011056 potassium acetate Nutrition 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical class [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical class [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910003244 Na2PdCl4 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- UXWCUTZFIBANES-UHFFFAOYSA-N [W+2]=O.[O-2].[O-2].[Ti+4] Chemical compound [W+2]=O.[O-2].[O-2].[Ti+4] UXWCUTZFIBANES-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000029936 alkylation Effects 0.000 description 1
- 238000005804 alkylation reaction Methods 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- PRKQVKDSMLBJBJ-UHFFFAOYSA-N ammonium carbonate Chemical class N.N.OC(O)=O PRKQVKDSMLBJBJ-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000011162 ammonium carbonates Nutrition 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000011021 bench scale process Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000006315 carbonylation Effects 0.000 description 1
- 238000005810 carbonylation reaction Methods 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 ethylene, propylene Chemical group 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000007037 hydroformylation reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000010815 organic waste Substances 0.000 description 1
- 238000005832 oxidative carbonylation reaction Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003112 potassium compounds Chemical class 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/54—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
- B01J23/66—Silver or gold
- B01J23/68—Silver or gold with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/54—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
- B01J23/66—Silver or gold
- B01J23/68—Silver or gold with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/683—Silver or gold with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium with chromium, molybdenum or tungsten
- B01J23/687—Silver or gold with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium with chromium, molybdenum or tungsten with tungsten
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/002—Mixed oxides other than spinels, e.g. perovskite
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/16—Reducing
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C67/00—Preparation of carboxylic acid esters
- C07C67/04—Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides onto unsaturated carbon-to-carbon bonds
- C07C67/05—Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides onto unsaturated carbon-to-carbon bonds with oxidation
- C07C67/055—Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides onto unsaturated carbon-to-carbon bonds with oxidation in the presence of platinum group metals or their compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/02—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen
- C07C69/12—Acetic acid esters
- C07C69/14—Acetic acid esters of monohydroxylic compounds
- C07C69/145—Acetic acid esters of monohydroxylic compounds of unsaturated alcohols
- C07C69/15—Vinyl acetate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2523/00—Constitutive chemical elements of heterogeneous catalysts
Definitions
- the invention relates to a supported palladium-gold catalyst. More particularly, the invention relates to a supported palladium-gold catalyst that has increased catalytic activity and selectivity in acetoxylation.
- Palladium-gold catalysts are known. They are used in acetoxylation. For instance, the oxidation of ethylene in the presence of a palladium-gold catalyst and acetic acid produces vinyl acetate, which is a useful monomer for the polymer industry. Acetoxylation is commonly performed by the vapor phase reaction using supported palladium-gold catalysts. Methods for supporting palladium-gold catalysts are known. In general, the method involves depositing a mixture of palladium and gold compounds onto a support and then reducing the palladium and gold to metals.
- Palladium and gold are both precious metals. Therefore, many efforts have been made to increase the catalytic activity and reduce the amount of catalyst needed. For example, U.S. Pat. No. 6,022,823 teaches calcining the support impregnated with palladium and gold compounds prior to reducing the metals. The catalyst shows improved activity.
- the supported palladium-gold catalyst has a low selectivity in acetoxylation. Due to the low selectivity, a large amount of ethylene is oxidized to carbon dioxide. Thus, it is important to the industry to increase the catalytic activity and selectivity of the supported palladium-gold catalysts.
- the invention is a catalyst.
- the catalyst comprises palladium and gold.
- the catalyst is supported on a support comprising titanium dioxide and tungsten trioxide.
- the support comprises from 75 wt % to 99 wt % of titanium dioxide and from 1 wt % to 25 wt % of tungsten trioxide.
- the invention includes a method for preparing the catalyst. The method comprises impregnating the support with a palladium compound and a gold compound. The impregnated support is calcined and then reduced to convert the palladium and gold compounds to metals.
- the invention also includes a method for preparing vinyl acetate with the catalyst of the invention. The method comprises oxidizing ethylene in the presence of acetic acid and the catalyst.
- the catalyst of the invention significantly improves the catalytic activity and the oxygen selectivity to the formation of vinyl acetate.
- the invention is a catalyst.
- the catalyst comprises palladium and gold and is supported on a support comprising titanium dioxide and tungsten trioxide.
- the support comprises from 75 wt % to 99 wt % of titanium dioxide and from 1 wt % to 25 wt % of tungsten trioxide. More preferably, the support comprises from 80 wt % to 99 wt % of titanium dioxide and from 1 wt % to 20 wt % of tungsten trioxide. Most preferably, the support comprises from 80 wt % to 95 wt % of titanium dioxide and from 5 wt % to 20 wt % of tungsten trioxide.
- the catalyst of the invention comprises from 0.1 wt % to 3 wt % of palladium and from 0.1 wt % to 3 wt % of gold and has a weight ratio of palladium to gold within the range of 5:1 to 1:3. More preferably, the catalyst comprises 0.5 wt % to 1.5 wt % of palladium and 0.25 wt % to 0.75 wt % of gold and has a weight ratio of palladium to gold within the range of 2.5:11 to 1:1.5.
- the support is impregnated with a palladium compound, a gold compound, and an optional alkali metal or ammonium compound. Any suitable impregnation method can be used.
- the support can be simultaneously or successively impregnated with a palladium compound, a gold compound, and an optional alkali metal or ammonium compound.
- the impregnation is performed in solutions.
- Suitable palladium compounds include palladium chloride, sodium chloropalladite, palladium nitrate, palladium sulfate, the like, and mixtures thereof.
- Suitable gold compounds include auric chloride, tetrachloroauric acid, sodium tetrachloroaurate, the like, and mixtures thereof.
- alkali metal or ammonium compounds include alkali metal or ammonium hydroxides, alkali metal or ammonium carbonates, alkali metal or ammonium bicarbonates, alkali metal or ammonium metasilicates, the like, and mixtures thereof.
- One method to impregnate the support involves first treating the support with a solution of an alkali metal or ammonium compound. The support is then impregnated with a solution containing palladium and gold compounds. In another method, the impregnation with the palladium and gold solutions is carried out before treatment with the solution of the alkali metal or ammonium compound. In this procedure the pores of the support is essentially completely filled with the solution of palladium and gold compounds. Typically, this is accomplished by dropping the solution onto the support until incipient wetness is achieved. The support impregnated with the palladium and gold compounds is then contacted with the alkali metal or ammonium compound.
- a third method involves mixing the alkali or ammonium compound and palladium and gold compounds prior to contacting with the support.
- the contact with the support can be done by dropping or spraying the mixture onto the support until incipient wetness or by making a slurry of the support in the solution.
- the impregnated support is preferably washed with water to remove alkali metal compounds such as chlorides formed during the impregnation and dried prior to calcination.
- the impregnated support is calcined, i.e., heated at an elevated temperature in a non-reducing atmosphere.
- the calcination is performed under such a condition that a portion of the palladium and gold compounds are decomposed. More preferably, at least 10% of the palladium and gold compounds are decomposed during the calcination.
- the calcination of the impregnated support is carried out at a temperature within the range of about 100° C. to about 600° C. More preferably, the temperature is within the range of 100° C. to 300° C.
- the temperature is within the range of 150° C. to 250° C.
- Suitable non-reducing gases used for the calcination include inert or oxidizing gases such as helium, nitrogen, argon, neon, nitrogen oxides, oxygen, air, carbon dioxide, the like, and mixtures thereof.
- the calcination is carried out in an atmosphere of nitrogen, oxygen, or air, or mixtures thereof.
- the impregnated support is reduced to convert the palladium and gold compounds to the corresponding metals.
- the reduction is performed by heating in the presence of a reducing agent.
- Suitable reducing agents include ammonia, carbon monoxide, hydrogen, hydrocarbons, olefins, aldehydes, alcohols, hydrazine, primary amines, carboxylic acids, carboxylic acid salts, carboxylic acid esters, the like, and mixtures thereof.
- Hydrogen, ethylene, propylene, alkaline hydrazine and alkaline formaldehyde are preferred reducing agents and ethylene and hydrogen are particularly preferred.
- Temperatures employed for the reduction can range from ambient up to about 600° C.
- the reduction temperature is within the range of 300° C. to 600° C. More preferably, the reduction temperature is within the range of 450° C. to 550° C.
- the reduction results in the supported catalyst of the invention.
- the catalyst of the invention has many uses. It can be used, for example, in the partial oxidation, hydrogenation, carbonylation, ammonia synthesis, selective hydrogenation, acetyloxylation, catalytic combustion or complete oxidation, three way catalysis, NOx removal, methanol synthesis, hydrogen peroxide synthesis, hydroformylation, alkylation and alkyl transfer, oxidative carbonylation, coupling of olefins with aromatics, and the preparation of methyl isobutyl ketone from acetone.
- the catalyst of the invention is particularly useful for the productions of vinyl acetate and allyl acetate.
- Various processes for the productions of vinyl acetate and allyl acetate are known. For instance, U.S. Pat. Nos. 3,743,607 and 3,775,342, the teachings of which are herein incorporated by reference, teach how to prepare vinyl acetate using palladium-gold catalysts.
- the catalyst is preferably treated with a potassium compound such as potassium acetate.
- the potassium treatment can be done by mixing the catalyst with a potassium acetate solution, filtering, and drying the treated catalyst.
- vinyl acetate can be made by the oxidation of ethylene in the presence of acetic acid and the catalyst.
- Allyl acetate can be made by a similar manner but using propylene rather than ethylene. I surprisingly found that the catalyst of the invention gives not only high catalytic activity but also high selectivity in acetoxylation.
- a support (30 grams, DT-52TM, product of Millennium Inorganic Chemicals, Inc., containing 10 wt % of tungsten trioxide and 90 wt % of titanium dioxide) is calcined at 700° C. for six hours.
- the calcined support is placed in a rotating glass dish with a baffle which aids in tumbling the carrier support during the metal impregnation.
- a solution containing 10.4 mL water, 294 mg NaAuCl 4 (Alfa), and 799 mg Na 2 PdCl 4 (Alfa) is placed in a 250 mL beaker with a magnetic stir bar and is stirred for 2 minutes to ensure all the metal compounds are dissolved.
- the impregnated support is placed in an 80° C. oven and dried overnight.
- the catalyst is placed in a quartz tube and the tube is inserted into a three zone electric furnace and heated to 230° C. under a 120 mL/min flow of dry air for 3 hours. After 3 hours the quartz tube is purged with nitrogen for 30 minutes and the temperature is increased to 500° C. and held for 3 hours under a 120 mL/min flow of 5% hydrogen in helium. After the three hours, nitrogen is introduced and the temperature is decreased to 25° C.
- the supported catalyst is submerged in a beaker filled with 200 mL of a 5 wt %/0.5 wt % potassium acetate/potassium hydroxide solution for 20 minutes. After 20 minutes, the solution is decanted and the beaker placed in an 80° C. oven for 24 hours to dry. After drying, the supported catalyst is placed in a plastic bottle for storage.
- the supported catalyst prepared above is tested in a continuous bench-scale vinyl acetate unit. Ethylene, acetic acid vapor, and oxygen are reacted over the supported catalyst to produce vinyl acetate. Reaction is run at a pressure range of 35 to 110 psig and a temperature range of 110 to 180° C. The reactants are fed downward through the catalyst bed. All feed gases are monitored by mass flow controllers. Acetic acid is fed by a metering pump. Ethylene, oxygen, nitrogen, and helium are premixed through a heat traced tube and fed to the reactor. Oxygen is supplied from a blended cylinder consisting of 20% oxygen, 10% nitrogen, and 70% helium.
- Acetic acid is fed separately through a heated line, to ensure complete vaporization, and combined with the gas feed at the top of the reactor.
- the pressure of the effluent is reduced and the effluent is sent to an analysis system (Gas Chromatography) via heat traced lines. After the gas stream had been analyzed it is sent to a knock out drum and collected as organic waste.
- Non-condensables are sent directly to the vent stack of the fume hood.
- the reactor is immersed in and heated by an air fluidized sand bath. Pressure is sensed by an electronic transmitter at the reactor inlet.
- the conversion, selectivity, and recovery data are obtained from known amounts of metered feeds and the GC analysis of the reactor effluent.
- Nitrogen from the oxygen/nitrogen/helium blend serves as an internal standard. The results are listed in Table 1 and Table 2.
- the oxygen selectivity is the ratio of oxygen converted to vinyl acetate/total oxygen consumed.
- Example 2 The general procedure of Example 1 is followed but a titanium dioxide (DT-51 T, product of Millennium Inorganic Chemicals, Inc.) is used. The supported catalyst is used for preparing vinyl acetate following the procedure in Example 1. The results are listed in Table 1 and Table 2.
- Table 1 compares the catalytic activity of the supported palladium-gold catalyst of the invention with the conventional catalyst supported on titanium dioxide at essentially the same oxygen selectivity. The results indicate that when the sand bath temperature is kept the same (123° C.), the reactor internal temperature for the supported catalyst of the invention is about 13° C. higher than that for the conventional catalyst. This temperature increase suggests that the supported catalyst of the invention is an order of magnitude more reactive than that of the conventional catalyst.
- Table 2 compares the oxygen selectivity of the supported catalyst of the invention with the conventional catalyst at essentially the same catalytic activity.
- the same catalytic activity is achieved by rising the sand bath temperature for the conventional catalyst to an extent that the conventional catalyst shows the same catalytic activity as the catalyst of the invention.
- the results indicate that the supported catalyst of the invention has significantly improved oxygen selectivity.
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Abstract
Description
- The invention relates to a supported palladium-gold catalyst. More particularly, the invention relates to a supported palladium-gold catalyst that has increased catalytic activity and selectivity in acetoxylation.
- Palladium-gold catalysts are known. They are used in acetoxylation. For instance, the oxidation of ethylene in the presence of a palladium-gold catalyst and acetic acid produces vinyl acetate, which is a useful monomer for the polymer industry. Acetoxylation is commonly performed by the vapor phase reaction using supported palladium-gold catalysts. Methods for supporting palladium-gold catalysts are known. In general, the method involves depositing a mixture of palladium and gold compounds onto a support and then reducing the palladium and gold to metals.
- Palladium and gold are both precious metals. Therefore, many efforts have been made to increase the catalytic activity and reduce the amount of catalyst needed. For example, U.S. Pat. No. 6,022,823 teaches calcining the support impregnated with palladium and gold compounds prior to reducing the metals. The catalyst shows improved activity.
- One challenge still facing the industry is that the supported palladium-gold catalyst has a low selectivity in acetoxylation. Due to the low selectivity, a large amount of ethylene is oxidized to carbon dioxide. Thus, it is important to the industry to increase the catalytic activity and selectivity of the supported palladium-gold catalysts.
- The invention is a catalyst. The catalyst comprises palladium and gold. The catalyst is supported on a support comprising titanium dioxide and tungsten trioxide. Preferably, the support comprises from 75 wt % to 99 wt % of titanium dioxide and from 1 wt % to 25 wt % of tungsten trioxide. The invention includes a method for preparing the catalyst. The method comprises impregnating the support with a palladium compound and a gold compound. The impregnated support is calcined and then reduced to convert the palladium and gold compounds to metals. The invention also includes a method for preparing vinyl acetate with the catalyst of the invention. The method comprises oxidizing ethylene in the presence of acetic acid and the catalyst. The catalyst of the invention significantly improves the catalytic activity and the oxygen selectivity to the formation of vinyl acetate.
- The invention is a catalyst. The catalyst comprises palladium and gold and is supported on a support comprising titanium dioxide and tungsten trioxide. Preferably, the support comprises from 75 wt % to 99 wt % of titanium dioxide and from 1 wt % to 25 wt % of tungsten trioxide. More preferably, the support comprises from 80 wt % to 99 wt % of titanium dioxide and from 1 wt % to 20 wt % of tungsten trioxide. Most preferably, the support comprises from 80 wt % to 95 wt % of titanium dioxide and from 5 wt % to 20 wt % of tungsten trioxide. Particularly suitable supports are those which are commercially available, e.g., DT-52 T titania from Millennium Inorganic Chemicals, Inc. Preferably, the catalyst of the invention comprises from 0.1 wt % to 3 wt % of palladium and from 0.1 wt % to 3 wt % of gold and has a weight ratio of palladium to gold within the range of 5:1 to 1:3. More preferably, the catalyst comprises 0.5 wt % to 1.5 wt % of palladium and 0.25 wt % to 0.75 wt % of gold and has a weight ratio of palladium to gold within the range of 2.5:11 to 1:1.5.
- The support is impregnated with a palladium compound, a gold compound, and an optional alkali metal or ammonium compound. Any suitable impregnation method can be used. The support can be simultaneously or successively impregnated with a palladium compound, a gold compound, and an optional alkali metal or ammonium compound. Preferably, the impregnation is performed in solutions. Suitable palladium compounds include palladium chloride, sodium chloropalladite, palladium nitrate, palladium sulfate, the like, and mixtures thereof. Suitable gold compounds include auric chloride, tetrachloroauric acid, sodium tetrachloroaurate, the like, and mixtures thereof. Sodium tetrachloroaurate and palladium chloride or sodium chloropalladite are most commonly used. Suitable alkali metal or ammonium compounds include alkali metal or ammonium hydroxides, alkali metal or ammonium carbonates, alkali metal or ammonium bicarbonates, alkali metal or ammonium metasilicates, the like, and mixtures thereof.
- One method to impregnate the support involves first treating the support with a solution of an alkali metal or ammonium compound. The support is then impregnated with a solution containing palladium and gold compounds. In another method, the impregnation with the palladium and gold solutions is carried out before treatment with the solution of the alkali metal or ammonium compound. In this procedure the pores of the support is essentially completely filled with the solution of palladium and gold compounds. Typically, this is accomplished by dropping the solution onto the support until incipient wetness is achieved. The support impregnated with the palladium and gold compounds is then contacted with the alkali metal or ammonium compound. A third method involves mixing the alkali or ammonium compound and palladium and gold compounds prior to contacting with the support. The contact with the support can be done by dropping or spraying the mixture onto the support until incipient wetness or by making a slurry of the support in the solution.
- The impregnated support is preferably washed with water to remove alkali metal compounds such as chlorides formed during the impregnation and dried prior to calcination. The impregnated support is calcined, i.e., heated at an elevated temperature in a non-reducing atmosphere. Preferably, the calcination is performed under such a condition that a portion of the palladium and gold compounds are decomposed. More preferably, at least 10% of the palladium and gold compounds are decomposed during the calcination. Preferably, the calcination of the impregnated support is carried out at a temperature within the range of about 100° C. to about 600° C. More preferably, the temperature is within the range of 100° C. to 300° C. Most preferably, the temperature is within the range of 150° C. to 250° C. Suitable non-reducing gases used for the calcination include inert or oxidizing gases such as helium, nitrogen, argon, neon, nitrogen oxides, oxygen, air, carbon dioxide, the like, and mixtures thereof. Preferably, the calcination is carried out in an atmosphere of nitrogen, oxygen, or air, or mixtures thereof.
- After calcination, the impregnated support is reduced to convert the palladium and gold compounds to the corresponding metals. The reduction is performed by heating in the presence of a reducing agent. Suitable reducing agents include ammonia, carbon monoxide, hydrogen, hydrocarbons, olefins, aldehydes, alcohols, hydrazine, primary amines, carboxylic acids, carboxylic acid salts, carboxylic acid esters, the like, and mixtures thereof. Hydrogen, ethylene, propylene, alkaline hydrazine and alkaline formaldehyde are preferred reducing agents and ethylene and hydrogen are particularly preferred. Temperatures employed for the reduction can range from ambient up to about 600° C. Preferably, the reduction temperature is within the range of 300° C. to 600° C. More preferably, the reduction temperature is within the range of 450° C. to 550° C. The reduction results in the supported catalyst of the invention.
- The catalyst of the invention has many uses. It can be used, for example, in the partial oxidation, hydrogenation, carbonylation, ammonia synthesis, selective hydrogenation, acetyloxylation, catalytic combustion or complete oxidation, three way catalysis, NOx removal, methanol synthesis, hydrogen peroxide synthesis, hydroformylation, alkylation and alkyl transfer, oxidative carbonylation, coupling of olefins with aromatics, and the preparation of methyl isobutyl ketone from acetone. The catalyst of the invention is particularly useful for the productions of vinyl acetate and allyl acetate. Various processes for the productions of vinyl acetate and allyl acetate are known. For instance, U.S. Pat. Nos. 3,743,607 and 3,775,342, the teachings of which are herein incorporated by reference, teach how to prepare vinyl acetate using palladium-gold catalysts.
- For the use in the productions of vinyl acetate and allyl acetate, the catalyst is preferably treated with a potassium compound such as potassium acetate. The potassium treatment can be done by mixing the catalyst with a potassium acetate solution, filtering, and drying the treated catalyst. In general, vinyl acetate can be made by the oxidation of ethylene in the presence of acetic acid and the catalyst. Allyl acetate can be made by a similar manner but using propylene rather than ethylene. I surprisingly found that the catalyst of the invention gives not only high catalytic activity but also high selectivity in acetoxylation.
- The following examples merely illustrate the invention. Those skilled in the art will recognize many variations that are within the spirit of the invention and scope of the claims.
- A support (30 grams, DT-52™, product of Millennium Inorganic Chemicals, Inc., containing 10 wt % of tungsten trioxide and 90 wt % of titanium dioxide) is calcined at 700° C. for six hours. The calcined support is placed in a rotating glass dish with a baffle which aids in tumbling the carrier support during the metal impregnation. A solution containing 10.4 mL water, 294 mg NaAuCl4 (Alfa), and 799 mg Na2PdCl4 (Alfa) is placed in a 250 mL beaker with a magnetic stir bar and is stirred for 2 minutes to ensure all the metal compounds are dissolved. To the solution is added 813 mg sodium bicarbonate (a product of Fisher) in 3 portions and stirring is continued for 3 minutes until no trace of gas evolution is observed. The solution is then added dropwise using a pipette to the support while it rotates in the glass dish at 35 rpm. Upon complete addition of the solution, 2 mL of deionized (DI) water is added to the beaker to rinse the sides of the beaker and then added to the rotating support dropwise. The glass dish is allowed to rotate for 15 minutes while being gently heated by a hot air gun before being placed in an 80° C. oven for 24 hours to facilitate coordination of the Pd and Au to the support. Thereafter the material is removed from the oven and placed in a filter and rinsed with 2000 mL of 90° C. DI water to remove sodium chloride. The filtrate is tested with silver nitrate and rinsing is continued until no trace of precipitate is observed. After washing, the impregnated support is placed in an 80° C. oven and dried overnight. After drying, the catalyst is placed in a quartz tube and the tube is inserted into a three zone electric furnace and heated to 230° C. under a 120 mL/min flow of dry air for 3 hours. After 3 hours the quartz tube is purged with nitrogen for 30 minutes and the temperature is increased to 500° C. and held for 3 hours under a 120 mL/min flow of 5% hydrogen in helium. After the three hours, nitrogen is introduced and the temperature is decreased to 25° C. After cooling, the supported catalyst is submerged in a beaker filled with 200 mL of a 5 wt %/0.5 wt % potassium acetate/potassium hydroxide solution for 20 minutes. After 20 minutes, the solution is decanted and the beaker placed in an 80° C. oven for 24 hours to dry. After drying, the supported catalyst is placed in a plastic bottle for storage.
- The supported catalyst prepared above is tested in a continuous bench-scale vinyl acetate unit. Ethylene, acetic acid vapor, and oxygen are reacted over the supported catalyst to produce vinyl acetate. Reaction is run at a pressure range of 35 to 110 psig and a temperature range of 110 to 180° C. The reactants are fed downward through the catalyst bed. All feed gases are monitored by mass flow controllers. Acetic acid is fed by a metering pump. Ethylene, oxygen, nitrogen, and helium are premixed through a heat traced tube and fed to the reactor. Oxygen is supplied from a blended cylinder consisting of 20% oxygen, 10% nitrogen, and 70% helium. Acetic acid is fed separately through a heated line, to ensure complete vaporization, and combined with the gas feed at the top of the reactor. The pressure of the effluent is reduced and the effluent is sent to an analysis system (Gas Chromatography) via heat traced lines. After the gas stream had been analyzed it is sent to a knock out drum and collected as organic waste. Non-condensables are sent directly to the vent stack of the fume hood. The reactor is immersed in and heated by an air fluidized sand bath. Pressure is sensed by an electronic transmitter at the reactor inlet. The conversion, selectivity, and recovery data are obtained from known amounts of metered feeds and the GC analysis of the reactor effluent. Nitrogen from the oxygen/nitrogen/helium blend serves as an internal standard. The results are listed in Table 1 and Table 2. The oxygen selectivity is the ratio of oxygen converted to vinyl acetate/total oxygen consumed.
- The general procedure of Example 1 is followed but a titanium dioxide (DT-51 T, product of Millennium Inorganic Chemicals, Inc.) is used. The supported catalyst is used for preparing vinyl acetate following the procedure in Example 1. The results are listed in Table 1 and Table 2.
- Table 1 compares the catalytic activity of the supported palladium-gold catalyst of the invention with the conventional catalyst supported on titanium dioxide at essentially the same oxygen selectivity. The results indicate that when the sand bath temperature is kept the same (123° C.), the reactor internal temperature for the supported catalyst of the invention is about 13° C. higher than that for the conventional catalyst. This temperature increase suggests that the supported catalyst of the invention is an order of magnitude more reactive than that of the conventional catalyst.
-
TABLE 1 COMPARISON OF CATALYTIC ACTIVITY OF THE SUPPORTED CATALYST OF THE INVENTION AND CONVENTIONAL CATALYST* Oxygen Productivity Sand Bath Internal Oxygen Selec- (Lbs VA/ Temp Temp Conver- tivity hr/100 Catalyst (° C.) (° C.) sion (%) (%) Lbs cat. Invention 123 137.8 55.5% 79.0% 37.4 (Ex. 1) Conventional 123 124.3 38.4% 80.7% 26.5 (C.2) *The data presented in this Table is a ten-hour average after a thirty-hour catalyst break-in. At this point, the reactor internal temperature remains essentially constant. - Table 2 compares the oxygen selectivity of the supported catalyst of the invention with the conventional catalyst at essentially the same catalytic activity. The same catalytic activity is achieved by rising the sand bath temperature for the conventional catalyst to an extent that the conventional catalyst shows the same catalytic activity as the catalyst of the invention. The results indicate that the supported catalyst of the invention has significantly improved oxygen selectivity.
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TABLE 2 COMPARISON OF SELECTIVITY OF THE SUPPORTED CATALYST OF THE INVENTION AND CONVENTIONAL CATALYST Reaction Oxygen Selectivity Oxygen Selectivity time (hr) Invention Catalyst (Ex. 1) Conventional Catalyst (C.2) 1 77% 66% 2 78% 64% 3 79% 64% 4 79% 65% 5 79% 66% 7 79% 66% 8 80% 66% 9 79% 67% 10 80% 67% 11 79% 67% 12 80% 68% 13 79% 68% 14 79% 68% 15 79% 68% 16 80% 67% 17 80% 68% 18 79% 68% 19 79% 68% 20 80% 68% 21 80% 69% 22 80% 69% 23 80% 69% 24 78% 69%
Claims (15)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/291,628 US20100121100A1 (en) | 2008-11-12 | 2008-11-12 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| MYPI2011001937A MY158126A (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| CN200980145301.0A CN102245296B (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| SG2013015961A SG188844A1 (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| CA2742615A CA2742615C (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| BRPI0921892-0A BRPI0921892B1 (en) | 2008-11-12 | 2009-10-27 | SUPPORT PALADIO GOLD CATALYSTORS, YOUR METHOD FOR PREPARING VINYL ACETATE |
| SG2014005334A SG2014005334A (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| ES09748865.4T ES2532401T3 (en) | 2008-11-12 | 2009-10-27 | Palladium-gold catalysts on vinyl acetate support and preparation with them |
| PCT/US2009/005828 WO2010056275A1 (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| EP09748865.4A EP2364208B1 (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
| KR1020117010261A KR101699559B1 (en) | 2008-11-12 | 2009-10-27 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
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|---|---|---|---|
| US12/291,628 US20100121100A1 (en) | 2008-11-12 | 2008-11-12 | Supported palladium-gold catalysts and preparation of vinyl acetate therewith |
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| US (1) | US20100121100A1 (en) |
| EP (1) | EP2364208B1 (en) |
| KR (1) | KR101699559B1 (en) |
| CN (1) | CN102245296B (en) |
| BR (1) | BRPI0921892B1 (en) |
| CA (1) | CA2742615C (en) |
| ES (1) | ES2532401T3 (en) |
| MY (1) | MY158126A (en) |
| SG (2) | SG188844A1 (en) |
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| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11676812B2 (en) | 2016-02-19 | 2023-06-13 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on top/bottom portions |
| US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
| US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| US11694892B2 (en) | 2016-07-28 | 2023-07-04 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US11749562B2 (en) | 2016-07-08 | 2023-09-05 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US11795545B2 (en) | 2014-10-07 | 2023-10-24 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
| US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
| US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
| US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| US11956977B2 (en) | 2015-12-29 | 2024-04-09 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
| US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
| US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
| US11986868B2 (en) | 2020-02-28 | 2024-05-21 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
| US11987881B2 (en) | 2020-05-22 | 2024-05-21 | Asm Ip Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
| US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| US12020934B2 (en) | 2020-07-08 | 2024-06-25 | Asm Ip Holding B.V. | Substrate processing method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12027365B2 (en) | 2020-11-24 | 2024-07-02 | Asm Ip Holding B.V. | Methods for filling a gap and related systems and devices |
| US12033885B2 (en) | 2020-01-06 | 2024-07-09 | Asm Ip Holding B.V. | Channeled lift pin |
| US12033849B2 (en) | 2019-08-23 | 2024-07-09 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane |
| US12033861B2 (en) | 2017-10-05 | 2024-07-09 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US12040184B2 (en) | 2017-10-30 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US12051567B2 (en) | 2020-10-07 | 2024-07-30 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including gas supply unit |
| US12051602B2 (en) | 2020-05-04 | 2024-07-30 | Asm Ip Holding B.V. | Substrate processing system for processing substrates with an electronics module located behind a door in a front wall of the substrate processing system |
| US12057314B2 (en) | 2020-05-15 | 2024-08-06 | Asm Ip Holding B.V. | Methods for silicon germanium uniformity control using multiple precursors |
| US12068154B2 (en) | 2020-04-13 | 2024-08-20 | Asm Ip Holding B.V. | Method of forming a nitrogen-containing carbon film and system for performing the method |
| US12074022B2 (en) | 2020-08-27 | 2024-08-27 | Asm Ip Holding B.V. | Method and system for forming patterned structures using multiple patterning process |
| US12087586B2 (en) | 2020-04-15 | 2024-09-10 | Asm Ip Holding B.V. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
| US12107005B2 (en) | 2020-10-06 | 2024-10-01 | Asm Ip Holding B.V. | Deposition method and an apparatus for depositing a silicon-containing material |
| US12106944B2 (en) | 2020-06-02 | 2024-10-01 | Asm Ip Holding B.V. | Rotating substrate support |
| US12112940B2 (en) | 2019-07-19 | 2024-10-08 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US12125700B2 (en) | 2020-01-16 | 2024-10-22 | Asm Ip Holding B.V. | Method of forming high aspect ratio features |
| US12129545B2 (en) | 2020-12-22 | 2024-10-29 | Asm Ip Holding B.V. | Precursor capsule, a vessel and a method |
| US12131885B2 (en) | 2020-12-22 | 2024-10-29 | Asm Ip Holding B.V. | Plasma treatment device having matching box |
| US12148609B2 (en) | 2020-09-16 | 2024-11-19 | Asm Ip Holding B.V. | Silicon oxide deposition method |
| US12154824B2 (en) | 2020-08-14 | 2024-11-26 | Asm Ip Holding B.V. | Substrate processing method |
| TWI863892B (en) * | 2017-08-30 | 2024-12-01 | 荷蘭商 Asm Ip 私人控股有限公司 | Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures |
| US12159788B2 (en) | 2020-12-14 | 2024-12-03 | Asm Ip Holding B.V. | Method of forming structures for threshold voltage control |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| US12173402B2 (en) | 2018-02-15 | 2024-12-24 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US12195852B2 (en) | 2020-11-23 | 2025-01-14 | Asm Ip Holding B.V. | Substrate processing apparatus with an injector |
| US12203166B2 (en) | 2020-05-07 | 2025-01-21 | Asm Ip Holding B.V. | Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals |
| US12209308B2 (en) | 2020-11-12 | 2025-01-28 | Asm Ip Holding B.V. | Reactor and related methods |
| US12218000B2 (en) | 2020-09-25 | 2025-02-04 | Asm Ip Holding B.V. | Semiconductor processing method |
| US12217954B2 (en) | 2020-08-25 | 2025-02-04 | Asm Ip Holding B.V. | Method of cleaning a surface |
| US12218269B2 (en) | 2020-02-13 | 2025-02-04 | Asm Ip Holding B.V. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
| US12217946B2 (en) | 2020-10-15 | 2025-02-04 | Asm Ip Holding B.V. | Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
| US12221357B2 (en) | 2020-04-24 | 2025-02-11 | Asm Ip Holding B.V. | Methods and apparatus for stabilizing vanadium compounds |
| US12230531B2 (en) | 2018-04-09 | 2025-02-18 | Asm Ip Holding B.V. | Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method |
| US12241158B2 (en) | 2020-07-20 | 2025-03-04 | Asm Ip Holding B.V. | Method for forming structures including transition metal layers |
| US12243747B2 (en) | 2020-04-24 | 2025-03-04 | Asm Ip Holding B.V. | Methods of forming structures including vanadium boride and vanadium phosphide layers |
| US12243757B2 (en) | 2020-05-21 | 2025-03-04 | Asm Ip Holding B.V. | Flange and apparatus for processing substrates |
| US12240760B2 (en) | 2016-03-18 | 2025-03-04 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
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Citations (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3743607A (en) * | 1965-06-25 | 1973-07-03 | Knapsack Ag | Palladium-gold catalyst |
| US3775342A (en) * | 1968-02-01 | 1973-11-27 | Bayer Ag | Process for the production of catalysts for making vinyl esters |
| US4046832A (en) * | 1974-08-12 | 1977-09-06 | The Goodyear Tire & Rubber Company | Catalytic process for the preparation of butenes from propylene |
| US4552860A (en) * | 1982-05-14 | 1985-11-12 | National Distillers And Chemical Corporation | Catalyst for the preparation of unsaturated aldehydes and carboxylic acids |
| US5194417A (en) * | 1991-12-05 | 1993-03-16 | Quantum Chemical Corporation | Pretreatment of palladium-gold catalysts useful in vinyl acetate synthesis |
| US5804296A (en) * | 1994-12-05 | 1998-09-08 | Daicel Chemical Industries, Ltd | Cellulose ester compositions and shaped articles |
| US5884138A (en) * | 1996-06-10 | 1999-03-16 | Corning Incorporated | Method for improving the stiffness of extrudates |
| US5977012A (en) * | 1994-06-01 | 1999-11-02 | Asec Manufacturing General Partnership | Alloyed metal catalysts for the reduction of NOx in the exhaust gases from internal combustion engines containing excess oxygen |
| US6022823A (en) * | 1995-11-07 | 2000-02-08 | Millennium Petrochemicals, Inc. | Process for the production of supported palladium-gold catalysts |
| US20010025009A1 (en) * | 1998-09-29 | 2001-09-27 | Stefan Fischer | Process for producing a catalyst body |
| US6316383B1 (en) * | 1998-06-26 | 2001-11-13 | Degussa Ag | Moldings based on silica |
| US6420595B1 (en) * | 2001-09-10 | 2002-07-16 | Millennium Petrochemicals, Inc. | Process control for vinyl acetate manufacture |
| US6632973B1 (en) * | 1999-08-09 | 2003-10-14 | Nippon Shokubai Co., Ltd. | Method for decomposing or oxidizing dioxins and/or poly chlorinated biphenyls contained in liquid |
| US6709570B1 (en) * | 1999-09-27 | 2004-03-23 | Shell Oil Company | Method for preparing a catalyst |
| US6797669B2 (en) * | 2000-12-29 | 2004-09-28 | China Petroleum & Chemical Corporation | Catalyst for selective hydrogenation, its preparation process and application |
| US6803340B2 (en) * | 2000-12-16 | 2004-10-12 | Sk Corporation | Catalyst for removing dioxin and preparation method thereof |
| US6844943B2 (en) * | 2000-11-29 | 2005-01-18 | Thomson Licensing Sa | Method and apparatus for video recording from previous recorded video |
| US6849243B1 (en) * | 1999-03-27 | 2005-02-01 | Celanese Chemicals Europe Gmbh | Catalysts for the gas-phase oxidation of ethylene and acetic acid to vinyl acetate, a process for producing them and their use |
| US20050095189A1 (en) * | 2003-09-26 | 2005-05-05 | Brey Larry A. | Catalysts, activating agents, support media, and related methodologies useful for making catalyst systems especially when the catalyst is deposited onto the support media using physical vapor deposition |
| US20050150845A1 (en) * | 2002-03-11 | 2005-07-14 | Takaaki Hashimoto | Method for treating waste water |
| US20050255021A1 (en) * | 2004-05-04 | 2005-11-17 | Difrancesco Chris E | Catalyst systems advantageous for high particulate matter environments |
| US6992040B2 (en) * | 1997-09-30 | 2006-01-31 | Degussa Ag | Process for preparing a shell-type catalyst |
| US20060270865A1 (en) * | 2005-05-25 | 2006-11-30 | Celanese International Corporation | Layered composition and processes for preparing and using the composition |
| US20070179310A1 (en) * | 2006-02-02 | 2007-08-02 | Augustine Steven M | Preparation of palladium-gold catalysts |
| US20070214759A1 (en) * | 2004-07-29 | 2007-09-20 | Merkel Gregory A | Narrow pore size distribution aluminum titanate body and method for making same |
| US7387981B1 (en) * | 2007-06-28 | 2008-06-17 | Lyondell Chemical Technology, L.P. | Direct epoxidation catalyst and process |
| US20080146721A1 (en) * | 2006-12-19 | 2008-06-19 | Kaminsky Mark P | Inorganic oxide extrudates |
| US20080153692A1 (en) * | 2004-12-20 | 2008-06-26 | Celanese International Corp. | Modified support materials for catalysts |
| US20080287289A1 (en) * | 2003-12-19 | 2008-11-20 | Celanese International Corporation | Halide free precurors for catalysts |
| US7514476B2 (en) * | 2006-03-17 | 2009-04-07 | Headwaters Technology Innovation, Llc | Stable concentrated metal colloids and methods of making same |
| US7521393B2 (en) * | 2004-07-27 | 2009-04-21 | Süd-Chemie Inc | Selective hydrogenation catalyst designed for raw gas feed streams |
| US7556793B2 (en) * | 2005-06-06 | 2009-07-07 | Saint-Gobain Ceramics & Plastics, Inc. | Rutile titania catalyst carrier |
| US7612244B2 (en) * | 2003-11-14 | 2009-11-03 | Solvay (Societe Anonyme) | Catalyst and gas phase method using such a catalyst |
| US20090274866A1 (en) * | 2008-04-30 | 2009-11-05 | Michelle Dawn Fabian | Ceramic article and method for making it |
| US7638459B2 (en) * | 2005-05-25 | 2009-12-29 | Uop Llc | Layered composition and processes for preparing and using the composition |
| US7648936B2 (en) * | 2008-01-29 | 2010-01-19 | Lyondell Chemical Technology, L.P. | Spray-dried transition metal zeolite and its use |
| US7674744B2 (en) * | 2004-03-31 | 2010-03-09 | Nissan Motor Co., Ltd. | Catalyst powder, method of producing the catalyst powder, and exhaust gas purifying catalyst |
| US7811968B2 (en) * | 2007-05-11 | 2010-10-12 | Lyondell Chemical Technology, L.P. | Preparation of palladium-gold catalysts |
| US7820583B2 (en) * | 2006-08-24 | 2010-10-26 | Millennium Inorganic Chemicals, Inc. | Nanocomposite particle and process of preparing the same |
| US7910517B2 (en) * | 2005-08-25 | 2011-03-22 | Basf Aktiengesellschaft | Mechanically stable catalyst based on alpha-alumina |
| US20110144380A1 (en) * | 2009-12-16 | 2011-06-16 | Daniel Travis Shay | Preparation of palladium-gold catalyst |
| US20110143927A1 (en) * | 2009-12-16 | 2011-06-16 | Daniel Travis Shay | Titania-containing extrudate |
| US20110190533A1 (en) * | 2010-01-29 | 2011-08-04 | Daniel Travis Shay | Titania-alumina supported palladium catalyst |
| US20110306748A1 (en) * | 2010-06-11 | 2011-12-15 | Daniel Travis Shay | Titania-alumina-tungsta extrudate and its use |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9810928D0 (en) * | 1998-05-22 | 1998-07-22 | Bp Chem Int Ltd | Catalyst and process |
| JP3868705B2 (en) * | 2000-04-06 | 2007-01-17 | 触媒化成工業株式会社 | Combustion exhaust gas treatment method |
| JP4730400B2 (en) * | 2007-10-09 | 2011-07-20 | 住友化学株式会社 | Photocatalyst dispersion |
-
2008
- 2008-11-12 US US12/291,628 patent/US20100121100A1/en not_active Abandoned
-
2009
- 2009-10-27 KR KR1020117010261A patent/KR101699559B1/en not_active Expired - Fee Related
- 2009-10-27 MY MYPI2011001937A patent/MY158126A/en unknown
- 2009-10-27 WO PCT/US2009/005828 patent/WO2010056275A1/en not_active Ceased
- 2009-10-27 SG SG2013015961A patent/SG188844A1/en unknown
- 2009-10-27 EP EP09748865.4A patent/EP2364208B1/en not_active Not-in-force
- 2009-10-27 CA CA2742615A patent/CA2742615C/en not_active Expired - Fee Related
- 2009-10-27 CN CN200980145301.0A patent/CN102245296B/en not_active Expired - Fee Related
- 2009-10-27 ES ES09748865.4T patent/ES2532401T3/en active Active
- 2009-10-27 BR BRPI0921892-0A patent/BRPI0921892B1/en not_active IP Right Cessation
- 2009-10-27 SG SG2014005334A patent/SG2014005334A/en unknown
Patent Citations (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3743607A (en) * | 1965-06-25 | 1973-07-03 | Knapsack Ag | Palladium-gold catalyst |
| US3775342A (en) * | 1968-02-01 | 1973-11-27 | Bayer Ag | Process for the production of catalysts for making vinyl esters |
| US4046832A (en) * | 1974-08-12 | 1977-09-06 | The Goodyear Tire & Rubber Company | Catalytic process for the preparation of butenes from propylene |
| US4552860A (en) * | 1982-05-14 | 1985-11-12 | National Distillers And Chemical Corporation | Catalyst for the preparation of unsaturated aldehydes and carboxylic acids |
| US5194417A (en) * | 1991-12-05 | 1993-03-16 | Quantum Chemical Corporation | Pretreatment of palladium-gold catalysts useful in vinyl acetate synthesis |
| US5336802A (en) * | 1991-12-05 | 1994-08-09 | Quantum Chemical Corporation | Pretreatment of palladium-gold catalysts useful in vinyl acetate synthesis |
| US5977012A (en) * | 1994-06-01 | 1999-11-02 | Asec Manufacturing General Partnership | Alloyed metal catalysts for the reduction of NOx in the exhaust gases from internal combustion engines containing excess oxygen |
| US5804296A (en) * | 1994-12-05 | 1998-09-08 | Daicel Chemical Industries, Ltd | Cellulose ester compositions and shaped articles |
| US6022823A (en) * | 1995-11-07 | 2000-02-08 | Millennium Petrochemicals, Inc. | Process for the production of supported palladium-gold catalysts |
| US5884138A (en) * | 1996-06-10 | 1999-03-16 | Corning Incorporated | Method for improving the stiffness of extrudates |
| US6992040B2 (en) * | 1997-09-30 | 2006-01-31 | Degussa Ag | Process for preparing a shell-type catalyst |
| US6316383B1 (en) * | 1998-06-26 | 2001-11-13 | Degussa Ag | Moldings based on silica |
| US20010025009A1 (en) * | 1998-09-29 | 2001-09-27 | Stefan Fischer | Process for producing a catalyst body |
| US6849243B1 (en) * | 1999-03-27 | 2005-02-01 | Celanese Chemicals Europe Gmbh | Catalysts for the gas-phase oxidation of ethylene and acetic acid to vinyl acetate, a process for producing them and their use |
| US6632973B1 (en) * | 1999-08-09 | 2003-10-14 | Nippon Shokubai Co., Ltd. | Method for decomposing or oxidizing dioxins and/or poly chlorinated biphenyls contained in liquid |
| US6709570B1 (en) * | 1999-09-27 | 2004-03-23 | Shell Oil Company | Method for preparing a catalyst |
| US6844943B2 (en) * | 2000-11-29 | 2005-01-18 | Thomson Licensing Sa | Method and apparatus for video recording from previous recorded video |
| US6803340B2 (en) * | 2000-12-16 | 2004-10-12 | Sk Corporation | Catalyst for removing dioxin and preparation method thereof |
| US6797669B2 (en) * | 2000-12-29 | 2004-09-28 | China Petroleum & Chemical Corporation | Catalyst for selective hydrogenation, its preparation process and application |
| US6420595B1 (en) * | 2001-09-10 | 2002-07-16 | Millennium Petrochemicals, Inc. | Process control for vinyl acetate manufacture |
| US20050150845A1 (en) * | 2002-03-11 | 2005-07-14 | Takaaki Hashimoto | Method for treating waste water |
| US20050095189A1 (en) * | 2003-09-26 | 2005-05-05 | Brey Larry A. | Catalysts, activating agents, support media, and related methodologies useful for making catalyst systems especially when the catalyst is deposited onto the support media using physical vapor deposition |
| US7612244B2 (en) * | 2003-11-14 | 2009-11-03 | Solvay (Societe Anonyme) | Catalyst and gas phase method using such a catalyst |
| US20080287289A1 (en) * | 2003-12-19 | 2008-11-20 | Celanese International Corporation | Halide free precurors for catalysts |
| US7674744B2 (en) * | 2004-03-31 | 2010-03-09 | Nissan Motor Co., Ltd. | Catalyst powder, method of producing the catalyst powder, and exhaust gas purifying catalyst |
| US20050255021A1 (en) * | 2004-05-04 | 2005-11-17 | Difrancesco Chris E | Catalyst systems advantageous for high particulate matter environments |
| US7745370B2 (en) * | 2004-07-27 | 2010-06-29 | Sud-Chemie Inc. | Selective hydrogenation catalyst designed for raw gas feed streams |
| US7521393B2 (en) * | 2004-07-27 | 2009-04-21 | Süd-Chemie Inc | Selective hydrogenation catalyst designed for raw gas feed streams |
| US20070214759A1 (en) * | 2004-07-29 | 2007-09-20 | Merkel Gregory A | Narrow pore size distribution aluminum titanate body and method for making same |
| US20080153692A1 (en) * | 2004-12-20 | 2008-06-26 | Celanese International Corp. | Modified support materials for catalysts |
| US20060270865A1 (en) * | 2005-05-25 | 2006-11-30 | Celanese International Corporation | Layered composition and processes for preparing and using the composition |
| US7897804B2 (en) * | 2005-05-25 | 2011-03-01 | Celanese International Corp. | Processes for preparing alkenyl alkanoates using a layered catalyst composition |
| US20080287703A1 (en) * | 2005-05-25 | 2008-11-20 | Celanese International Corporation | Layered composition and processes for preparing and using the composition |
| US20110152066A1 (en) * | 2005-05-25 | 2011-06-23 | Celanese International Corporation | Layered composition and processes for preparing and using the composition |
| US7638459B2 (en) * | 2005-05-25 | 2009-12-29 | Uop Llc | Layered composition and processes for preparing and using the composition |
| US7556793B2 (en) * | 2005-06-06 | 2009-07-07 | Saint-Gobain Ceramics & Plastics, Inc. | Rutile titania catalyst carrier |
| US7910517B2 (en) * | 2005-08-25 | 2011-03-22 | Basf Aktiengesellschaft | Mechanically stable catalyst based on alpha-alumina |
| US20070179310A1 (en) * | 2006-02-02 | 2007-08-02 | Augustine Steven M | Preparation of palladium-gold catalysts |
| US7514476B2 (en) * | 2006-03-17 | 2009-04-07 | Headwaters Technology Innovation, Llc | Stable concentrated metal colloids and methods of making same |
| US7820583B2 (en) * | 2006-08-24 | 2010-10-26 | Millennium Inorganic Chemicals, Inc. | Nanocomposite particle and process of preparing the same |
| US7842641B2 (en) * | 2006-08-24 | 2010-11-30 | Millennium Inorganic Chemicals, Inc. | Nanocomposite particle and process of preparing the same |
| US20080146721A1 (en) * | 2006-12-19 | 2008-06-19 | Kaminsky Mark P | Inorganic oxide extrudates |
| US7811968B2 (en) * | 2007-05-11 | 2010-10-12 | Lyondell Chemical Technology, L.P. | Preparation of palladium-gold catalysts |
| US7387981B1 (en) * | 2007-06-28 | 2008-06-17 | Lyondell Chemical Technology, L.P. | Direct epoxidation catalyst and process |
| US7648936B2 (en) * | 2008-01-29 | 2010-01-19 | Lyondell Chemical Technology, L.P. | Spray-dried transition metal zeolite and its use |
| US20090274866A1 (en) * | 2008-04-30 | 2009-11-05 | Michelle Dawn Fabian | Ceramic article and method for making it |
| US20110144380A1 (en) * | 2009-12-16 | 2011-06-16 | Daniel Travis Shay | Preparation of palladium-gold catalyst |
| US20110143927A1 (en) * | 2009-12-16 | 2011-06-16 | Daniel Travis Shay | Titania-containing extrudate |
| US20110190533A1 (en) * | 2010-01-29 | 2011-08-04 | Daniel Travis Shay | Titania-alumina supported palladium catalyst |
| US20110306748A1 (en) * | 2010-06-11 | 2011-12-15 | Daniel Travis Shay | Titania-alumina-tungsta extrudate and its use |
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| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| TWI863892B (en) * | 2017-08-30 | 2024-12-01 | 荷蘭商 Asm Ip 私人控股有限公司 | Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures |
| US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US12033861B2 (en) | 2017-10-05 | 2024-07-09 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US12040184B2 (en) | 2017-10-30 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US11972944B2 (en) | 2018-01-19 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US12119228B2 (en) | 2018-01-19 | 2024-10-15 | Asm Ip Holding B.V. | Deposition method |
| US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
| US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US12173402B2 (en) | 2018-02-15 | 2024-12-24 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US12020938B2 (en) | 2018-03-27 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US12230531B2 (en) | 2018-04-09 | 2025-02-18 | Asm Ip Holding B.V. | Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| CN109107555A (en) * | 2018-08-04 | 2019-01-01 | 山东迅达化工集团有限公司 | The preparation method of titania support |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US12448682B2 (en) | 2018-11-06 | 2025-10-21 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US12444599B2 (en) | 2018-11-30 | 2025-10-14 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
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| US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US12176243B2 (en) | 2019-02-20 | 2024-12-24 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
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| US12410522B2 (en) | 2019-02-22 | 2025-09-09 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
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| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
| US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| US11453946B2 (en) | 2019-06-06 | 2022-09-27 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
| US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| US12195855B2 (en) | 2019-06-06 | 2025-01-14 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
| US12252785B2 (en) | 2019-06-10 | 2025-03-18 | Asm Ip Holding B.V. | Method for cleaning quartz epitaxial chambers |
| US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
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| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US12107000B2 (en) | 2019-07-10 | 2024-10-01 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11996304B2 (en) | 2019-07-16 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing device |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US12129548B2 (en) | 2019-07-18 | 2024-10-29 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US12112940B2 (en) | 2019-07-19 | 2024-10-08 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
| US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| US12247286B2 (en) | 2019-08-09 | 2025-03-11 | Asm Ip Holding B.V. | Heater assembly including cooling apparatus and method of using same |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| US12040229B2 (en) | 2019-08-22 | 2024-07-16 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US12033849B2 (en) | 2019-08-23 | 2024-07-09 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane |
| US12532674B2 (en) | 2019-09-03 | 2026-01-20 | Asm Ip Holding B.V. | Methods and apparatus for depositing a chalcogenide film and structures including the film |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US12230497B2 (en) | 2019-10-02 | 2025-02-18 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US12428726B2 (en) | 2019-10-08 | 2025-09-30 | Asm Ip Holding B.V. | Gas injection system and reactor system including same |
| US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
| US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US12266695B2 (en) | 2019-11-05 | 2025-04-01 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US12119220B2 (en) | 2019-12-19 | 2024-10-15 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
| US12033885B2 (en) | 2020-01-06 | 2024-07-09 | Asm Ip Holding B.V. | Channeled lift pin |
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| US12125700B2 (en) | 2020-01-16 | 2024-10-22 | Asm Ip Holding B.V. | Method of forming high aspect ratio features |
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Also Published As
| Publication number | Publication date |
|---|---|
| SG188844A1 (en) | 2013-04-30 |
| EP2364208B1 (en) | 2015-01-14 |
| KR101699559B1 (en) | 2017-01-24 |
| WO2010056275A1 (en) | 2010-05-20 |
| CN102245296A (en) | 2011-11-16 |
| BRPI0921892A2 (en) | 2015-12-29 |
| BRPI0921892B1 (en) | 2018-04-17 |
| MY158126A (en) | 2016-08-30 |
| EP2364208A1 (en) | 2011-09-14 |
| ES2532401T3 (en) | 2015-03-26 |
| CA2742615C (en) | 2017-01-17 |
| CA2742615A1 (en) | 2010-05-20 |
| SG2014005334A (en) | 2014-03-28 |
| CN102245296B (en) | 2014-12-24 |
| KR20110089268A (en) | 2011-08-05 |
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