US20080160266A1 - Metallic coatings on silicon substrates - Google Patents
Metallic coatings on silicon substrates Download PDFInfo
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- US20080160266A1 US20080160266A1 US12/013,543 US1354308A US2008160266A1 US 20080160266 A1 US20080160266 A1 US 20080160266A1 US 1354308 A US1354308 A US 1354308A US 2008160266 A1 US2008160266 A1 US 2008160266A1
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000000576 coating method Methods 0.000 title claims abstract description 37
- 239000005300 metallic glass Substances 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 229910052742 iron Inorganic materials 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000007769 metal material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 62
- 239000010410 layer Substances 0.000 abstract description 40
- 238000000034 method Methods 0.000 abstract description 32
- 239000000463 material Substances 0.000 abstract description 29
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- 239000000203 mixture Substances 0.000 description 55
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- 239000011651 chromium Substances 0.000 description 26
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- 239000010959 steel Substances 0.000 description 24
- 238000004031 devitrification Methods 0.000 description 12
- 239000012071 phase Substances 0.000 description 11
- 239000002210 silicon-based material Substances 0.000 description 10
- 238000002679 ablation Methods 0.000 description 9
- 239000011572 manganese Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
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- 239000000956 alloy Substances 0.000 description 6
- 238000004549 pulsed laser deposition Methods 0.000 description 6
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- 238000002207 thermal evaporation Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0029—Protection against environmental influences not provided for in groups B81B7/0012 - B81B7/0025
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00674—Treatments for improving wear resistance
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/003—Making ferrous alloys making amorphous alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/02—Amorphous alloys with iron as the major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
Definitions
- the invention pertains to metallic coatings on silicon substrates, protected silicon surfaces, methods of forming metallic coatings on silicon substrates and methods of protecting silicon surfaces and other semiconductor surfaces.
- Silicon and materials containing silicon are used for a variety of electronic applications including semiconductors and other electronic devices, and also in technologies such as microelectromechanical systems (MEMS), and Integrated Micromechanical Systems-on-a-Chip. Due to the excellent semiconductive properties of silicon, silicon has been utilized extensively in various electronics industries. Such extensive use has lead to the development of silicon processing methods such as photolithography and other patterning techniques which allow precision processing and fabrication of microscale silicon structures. These techniques are now additionally being employed to form silicon devices such as, for example, microengines. However, silicon has relatively poor mechanical properties, and has little wear resistance and corrosion resistance relative to other materials such as some metallic materials. Technology has yet to be developed for the patterning of metal materials on the microscale size level with the precision which silicon processing occurs.
- MEMS microelectromechanical systems
- Integrated Micromechanical Systems-on-a-Chip Integrated Micromechanical Systems-on-a-Chip. Due to the excellent semiconductive properties of silicon, silicon has been utilized extensively in various electronics industries. Such extensive use has lead to the development of silicon processing methods such
- Steel is a metallic alloy which can have exceptional strength characteristics, and which is commonly utilized in structures where strength is required or advantageous, such as in the skeletal support of building structures, tools, engine components, and protective shielding.
- the internal structure (microstructure) of conventional steel alloys is always metallic and polycrystalline (consisting of many crystalline grains). More recently, steel alloys have been developed which can attain an amorphous microstructure, referred to as metallic glass.
- the metallic glass can in turn be treated to “devitrify” the glass and thereby form a crystalline structure which can, in some instances, be nanocrystalline (having crystal grains on the order of 10 ⁇ 9 meters).
- the particular alloy composition generally determines whether the alloy will solidify to form microcrystalline grain structures or amorphous glass.
- Conventional steels having microcrystalline grain structure can be produced to have a high hardness, although an increased hardness can be accompanied by a decrease in toughness utilizing conventional steel processing methods.
- Amorphous glass steel materials can be produced which can have exceptionally high strength and hardness.
- amorphous steel can be devitrified to produce materials having nanocrystalline grains, and having an increased hardness relative to the glass.
- nanocrystalline steel materials formed by devitrification of metallic glass can be produced which can achieve an increased hardness without a corresponding loss of toughness.
- the steel materials discussed above have high strength, and are highly resistant to wear and corrosion, relative to silicon materials. It is desirable to develop methods of coating silicon materials with steel materials and methods of metallizing silicon surfaces.
- the invention encompasses a method of forming a metallic coating on a substrate which contains silicon.
- the substrate has a silicon surface and a metallic glass layer is formed over the silicon surface.
- the invention encompasses a method of protecting a substrate which contains silicon.
- the substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer which contains metallic glass.
- the metallic glass comprises iron and one or more of B, Si, P and C.
- the invention encompasses a structure including a substrate containing silicon and a metallic layer over the substrate.
- the metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least about 9.2 GPa.
- the metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.
- FIG. 1 is a fragmentary, diagrammatic, cross sectional view of a substrate at a preliminary processing step of a method of the present invention.
- FIG. 2 is a view of the FIG. 1 substrate shown at a processing step subsequent to that of FIG. 1 .
- FIG. 3 illustrates true-stress/true-strain measurements obtained from metallic ribbons comprising metallic glass of the composition (Fe 0.8 Cr 0.2 ) 81 B 17 W 2 .
- the graph curves reflect data obtained at 20° C. at a strain rate of 10 ⁇ 3 s ⁇ 1 .
- FIG. 4 is a scanned image of a coated silicon coupon which was coated by pulsed laser depositing a coating of approximately 1 micron thickness of composition (Fe 0.8 Cr 0.2 ) 73 Mo 2 W 2 B 16 C 4 Si 1 Mn 2 .
- FIG. 5 shows an X-ray diffraction scan of the as-deposited coating shown in FIG. 4 .
- FIG. 6 shows an X-ray diffraction scan of the coated silicon coupon of FIG. 4 which has been subsequently heat treated at 700° C. for 1 hour.
- FIG. 7 illustrates measured (Panel A) and Rietveld refined (calculated, Panel B) X-ray diffraction patterns of a pulsed laser deposited coating comprising the composition (Fe 0.8 Cr 0.2 ) 73 Mo 2 W 2 B 16 C 4 Si 1 Mn 2 after heat treating the coating for 1 hour at 700° C.
- FIG. 8 is a SEM micrograph of a coating deposited from a target comprising (Fe 0.8 Cr 0.2 ) 73 Mo 2 W 2 B 16 C 4 Si 1 Mn 2 , formed by methods of the present invention utilizing pulsed laser deposition followed by treatment for 1 hour at 700° C.
- FIG. 9 shows an EDS scan taken at the surface of a heat treated coating which was formed by pulsed laser deposition from a target comprising the composition (Fe 0.8 Cr 0.2 ) 73 Mo 2 W 2 B 16 C 4 Si 1 Mn 2 .
- the invention encompasses methodology for forming metallic glass materials and for forming materials having nanocrystalline scale composite microstructures over silicon substrates.
- the term “silicon substrate” can refer to any structure or device comprising silicon.
- the silicon comprised by the substrate is not limited to a particular form and can comprise monocrystalline silicon, polycrystalline silicon, amorphous silicon, silicon oxide, silicon dioxide, silicon nitride, silicon carbide and combinations thereof. Additionally, the substrate can comprise any of the listed silicon materials in combination with other non-silicon materials.
- a substrate 10 is provided for treatment of a surface 12 .
- Substrate 10 comprises silicon and can further comprise additional materials as discussed above.
- Surface 12 can comprise a silicon surface such as, for example, a surface comprising monocrystalline silicon, polysilicon, amorphous silicon, silicon oxide, silicon dioxide, silicon nitride or silicon carbide.
- surface 12 can comprise a non-silicon material comprised by the silicon substrate such as, for example, a metallic material.
- surface 12 can comprise a plurality of materials.
- surface 12 can comprise two or more silicon comprising materials, can comprise two or more non-silicon materials or can comprise mixtures of silicon materials and non-silicon materials.
- at least a portion of surface 12 comprises silicon. It can be advantageous for surface 12 to comprise at least some silicon for enhancing adhesion of a subsequently deposited metallic layer (discussed below).
- Surface 12 can be planar as shown in FIG. 1 , or alternatively can be non-planar or patterned (not shown).
- a patterned surface 12 can be provided by, for example, patterning substrate 10 utilizing conventional patterning techniques such as, for example, photolithography and/or etching techniques.
- surface 12 can be treated by forming a layer 14 comprising a metallic material over surface 12 .
- Formation of layer 14 can preferably comprise deposition utilizing an ablation technique.
- Exemplary ablation techniques which can be utilized for purposes of deposition of layer 14 include pulsed laser deposition, sputtering and other conventional ablation techniques.
- the ablation deposition can utilize a single deposition target or multiple deposition targets. In particular aspects, multiple targets of differing composition can be utilized wherein the combination of differing compositions can be combined to form a desired total composition.
- the single target can comprise a homogeneous ablation surface consisting of the composition to be deposited or can comprise a heterogeneous surface having regions of differing composition wherein the differing compositions can be combined to provide the desired total composition to be deposited.
- the total composition to be ablated can be referred to as the source composition.
- deposited layer 14 can preferably comprise a composition identical to the source composition, it is to be understood that the deposited composition can vary somewhat relative to the source material composition.
- a source material for purposes of the present invention preferably comprises a steel material composition capable of forming a metallic glass.
- steel is defined as any iron-based alloy in which no other single element (other than iron) is present in an excess of 30 weight %, for which the iron content amounts to at least 55 weight % and carbon is limited to a maximum of 2 weight %.
- Steel alloys of can additionally incorporate other elements including, but not limited to, manganese, nickel, chromium, molybdenum, vanadium, silicon, aluminum, boron, phosphorous, sulfur, tungsten, and any of the rare earth metals.
- An exemplary steel composition comprises at least 55% iron, by weight, and can additionally comprise at least one of B, C, Si and P.
- the composition will comprise at least two of B, C, and Si.
- the composition can comprise each of C, B and Si and in particular embodiments can comprise B, C, and Si at an atomic ratio of B 17 C 5 Si 1 , or at an atomic ratio of B 16 C 4 Si 1 .
- the composition can contain at least one transition metal, preferably selected from the group consisting of W, Mo, Cr, and Mn. Al and/or Gd can also be present in the composition in particular aspects of the invention.
- the particular composition of a steel alloy generally determines whether the alloy is capable of forming an amorphous glass (metallic glass) when the alloy solidifies.
- compositions of the present invention preferably comprise fewer than eleven elements, and can more preferably comprise fewer than nine elements. Additionally, the composition can comprise as few as two elements. In particular embodiments, the mixture can consist essentially of fewer than eleven elements. Where a particularly pure composition is desired, the composition can consist of fewer than eleven elements. Further, the composition can consist essentially of, or can consist of as few as two elements. Generally, the steel compositions are composed of from four to eight elements.
- Exemplary steel compositions which can be utilized in the methodology of the present invention include Fe 63 Mo 2 Si 1 , Fe 63 Cr 8 Mo 2 , Fe 63 Mo 2 Al 4 , (Fe 0.8 Cr 0.2 ) 81 B 17 W 2 , (Fe 0.8 Mo 0.2 ) 83 B 17 , Fe 63 B 17 Si 1 , Fe 63 Cr 8 Mo 2 C 5 , Fe 63 Mo 2 C 5 , Fe 80 Mo 20 , Fe 63 Cr 8 Mo 2 B 17 , Fe 83 B 17 , Fe 63 B 17 Si 5 , Fe 63 B 17 C 2 , Fe 63 B 17 C 3 Si 3 , (Fe 0.8 Cr 0.2 ) 79 B 17 W 2 C 2 , Fe 63 B 17 C 3 Si 5 , Fe 63 B 17 C 2 W 2 , Fe 63 B 17 C 8 , Fe 63 B 17 C 5 , Fe 63 B 17 C 5 Si 5 , (Fe 0.8 Cr 0.2 ) 78 Mo 2 W 2 B 12 C 5 Si 1
- compositions as set forth above for forming layer 14 can be advantageous to utilize the steel compositions as set forth above for forming layer 14 due to the ability of the compositions to form super-hard steel coatings.
- These compositions have been shown to be able of forming metallic glass structures which may be transformed through a solid-solid state devitrification transformation to yield multiphase nanoscale composite microstructures.
- these compositions can comprise up to 100% amorphous structure (metallic glass) and can typically have a hardness of at least about 9.2 GPa since all properties of the metallic glass formed of the composition have been determined by forming metallic glass ribbons of the composition to be tested.
- stress strain curves for metallic glass ribbons show that elongation as high as 60% is obtainable.
- Devitrification of the steel alloy compositions can further increase the hardness of the material. Additionally, devitrified ribbons have exhibited super plasticity having maximum elongation of up to about 180%. Yield strengths for the steel compositions have been measured as high as 2880 MPa with ultimate yield strengths of 3140 MPa and tensile elongation of 5% ( FIG. 3 ) at room temperature.
- Deposition targets for utilization for forming layer 14 can be prepared by depositing the desired compositions onto a base such as a 4340 base steel coupon. Such target formation can utilize thermal deposition techniques including but not limited to high velocity oxyfuel (HVOF) deposition of the composition onto the base. Alternatively, other conventional methods of target formation can be utilized.
- HVOF high velocity oxyfuel
- layer 14 is not limited to any particular thickness and can preferably be performed to have a thickness of from about 10 Angstroms up to about 3 microns, more preferably from 0.5 microns to about 1.5 microns. Where pulsed laser deposition is utilized, a deposition rate can typically be about 10 Angstroms per second. It is to be understood that the methods of the present invention encompass other deposition techniques and rates, and that the preferable range of deposition rates may vary depending on the technique utilized. Accordingly, deposition time will vary based on the deposition conditions, the source composition, and the technique utilized.
- the as-deposited coatings of the invention adhere well to silicon substrates when applied using ablation techniques.
- thermal deposition techniques such as High Velocity Oxy Fuel (HVOF) deposition or plasma spray deposition
- HVOF High Velocity Oxy Fuel
- plasma spray deposition can be utilized to deposit steel coatings onto silicon substrate
- the coatings formed by such thermal deposition methods adhere to silicon materials less strongly relative to those formed by ablation techniques.
- Steel coatings formed by ablation deposition under appropriate conditions adhere to the silicon substrate such that the coating remains adhered to the silicon surface after repeated attempts to scrape off the coating with a razor blade.
- Deposition temperature during the formation of layer 14 can affect the strength of adhesion of layer 14 to the underlying substrate. Where the deposition temperature is too high the steel composition deposited can dissolve some of the silicon into the steel, and where the deposition temperature is too low, the metallic layer 14 does not adhere as well relative to utilization of a higher deposition temperature. Additionally, uniformity, roughness and topography of an outer surface of layer 14 can vary depending on deposition conditions. An appropriate deposition condition will depend upon the composition to be deposited, the composition of surface 12 , and additional factors such as whether substrate 10 has been preheated prior to initiation of the deposition of layer 14 .
- FIG. 4 shows a scanned image of a surface of a silicon coupon coated with approximately 1 micron thickness of material deposited from a target having composition (Fe 0.8 Cr 0.2 ) 73 Mo 2 W 2 B 16 C 4 Si 1 Mn 2 .
- the coating shown was deposited by pulsed laser deposition using a 200 mJ laser at 20 Hz.
- the scanned image was obtained from the layer as deposited (prior to any devitrification).
- the X-ray diffraction scan shown in FIG. 5 was performed on the as-deposited layer shown in FIG. 4 .
- the broad peak centered near 45° indicates that an amorphous structure was formed.
- the single Bragg diffracted peak in FIG. 5 is due to the silicon substrate.
- as-deposited layer 14 can comprise a microstructure that includes at least some metallic glass.
- the amount of amorphous structure within layer 14 will depend upon the deposition method, the deposition conditions and the composition of the source material.
- layer 14 can comprise a hardness of greater than about 9.2 GPa.
- layer 14 will comprise a hardness of between about 9.2 GPa and about 15.0 GPa.
- substrate 10 can be utilized without further processing of layer 14 .
- the metallic material of layer 14 can be further treated to devitrify some or all of the metallic glass present in the metallic material to form crystalline material having a nanocrystalline grain size. This solid-solid devitrification step can result in an increased hardness of the devitrified layer relative to the as-deposited layer.
- Devitrification of the material of layer 14 can comprise heat treatment of the as-deposited layer.
- the treatment can comprise heating the layer, or a portion of the layer, to a temperature above the crystallization temperature of the particular deposited steel composition and less than the melting temperature of the composition, and can comprise heating from between 1 minute to about 1,000 hours.
- Devitrification will typically comprise heating layer 14 from about 550° C. to about 850° C. for between about 10 minutes and about 1 hour.
- Heat treatment of metallic glass material enables the solid state phase change wherein the amorphous metallic glass can be converted to one or more crystalline solid phases.
- the solid state devitrification of amorphous glass structure enables uniform nucleation to occur throughout the amorphous material to form nanocrystalline grains within the glass.
- the metallic matrix microstructures formed by devitrification can comprise a steel matrix (iron with dissolved interstitials) or a complex multi-phase matrix comprising several phases, one of which is ferrite.
- the nanocrystalline steel metal matrix composite grain structure can enable a combination of mechanical properties which are improved compared to the properties which would exist with larger grain sizes or with the metallic glass. Such improved mechanical properties can include, for example, high strength and high hardness, and for particular compositions of the present invention can include a maintained or even increased toughness relative to materials comprising larger grain sizes or comprising metallic glass.
- the resulting structure of devitrified material can comprise nanoscale grains comprising from about 50 to about 150 nanometer grain size. Additionally, the devitrified material can comprise second phase precipitates at grain boundaries having a precipitate size on the order of 20 nanometers.
- FIGS. 6 , 7 , 8 and 9 show data obtained after devitrification of the as-deposited layer (shown in FIG. 4 ) according to methods of the present invention. The as deposited layer was heat treated at 700° C. for one hour. The X-ray diffraction scan shown in FIG. 6 reveals many sharp crystalline peaks indicated that several nanoscale phases formed in the devitrified material.
- an X-ray diffraction data pattern shown in Panel A was obtained from the heat treated coating and was in turn refined as shown in Panel B to identify the nanocomposite structure which is summarized in Table 1.
- the microstructure of the heat treated coating was found to consist of four phases ( ⁇ -Fe, Fe 23 C 6 , Fe 3 B and Fe 2 B). These results are similar to those obtained previously from a coating formed by HVOF.
- the present analysis indicated an additional phase (Fe 2 B) in the coating formed by pulsed laser deposition relative to the HVOF coating. This additional phase is not unusual in alloys of this type and is the stable phase in the Fe-B binary system.
- the surface of the heat treated layer 14 was observed utilizing SEM to determine uniformity of the coating as shown in FIG. 8 .
- An EDS scan shown in FIG. 9 was taken at the surface of the heat treated layer 14 .
- the EDS scan positively identified Fe, Cr, W and Si with minor peaks present at the Mo and Mn positions.
- the data obtained for the as-formed and devitrified coatings indicate the ability of the compositions to form metallic glass upon ablation deposition and to form nanocrystalline microstructure upon devitrification.
- Coatings formed by methodology of the present invention can be utilized for protecting surfaces comprising silicon, for protecting non-silicon surfaces comprised by a silicon-containing structure, can be utilized for providing support and/or mechanical strength to silicon comprising devices and can impart wear resistance to silicon comprising structures.
- the coatings of the invention are described as being useful with respect to silicon surfaces and materials, the coatings can be useful for protecting other semiconductor surfaces including those in GaAs based semiconductors as well.
- Exemplary technologies to which the methods and coatings of the invention may be especially useful include, but are not limited to, semiconductor devices, microelectromechanical systems, and integrated micromechanical systems-on-a-chip. Additionally, use of the materials of the invention is not limited to coatings since these materials can be used to form structural features in any of these devices as well.
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Abstract
The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.
Description
- This application is a divisional of pending U.S. patent application Ser. No. 10/918,287, entitled METALLIC COATINGS ON SILICON SUBSTRATES, AND METHODS OF FORMING METALLIC COATINGS ON SILICON SUBSTRATES, filed on Aug. 13, 2004, which is a Continuation-in-part of U.S. patent application Ser. No. 10/766,713 filed on Jan. 27, 2004, now abandoned.
- The United States Government has rights in the following invention pursuant to Contract No. DE-AC07-99ID13727 between the U.S. Department of Energy and Bechtel BWXT Idaho, LLC.
- The invention pertains to metallic coatings on silicon substrates, protected silicon surfaces, methods of forming metallic coatings on silicon substrates and methods of protecting silicon surfaces and other semiconductor surfaces.
- Silicon and materials containing silicon are used for a variety of electronic applications including semiconductors and other electronic devices, and also in technologies such as microelectromechanical systems (MEMS), and Integrated Micromechanical Systems-on-a-Chip. Due to the excellent semiconductive properties of silicon, silicon has been utilized extensively in various electronics industries. Such extensive use has lead to the development of silicon processing methods such as photolithography and other patterning techniques which allow precision processing and fabrication of microscale silicon structures. These techniques are now additionally being employed to form silicon devices such as, for example, microengines. However, silicon has relatively poor mechanical properties, and has little wear resistance and corrosion resistance relative to other materials such as some metallic materials. Technology has yet to be developed for the patterning of metal materials on the microscale size level with the precision which silicon processing occurs.
- Steel is a metallic alloy which can have exceptional strength characteristics, and which is commonly utilized in structures where strength is required or advantageous, such as in the skeletal support of building structures, tools, engine components, and protective shielding. The internal structure (microstructure) of conventional steel alloys is always metallic and polycrystalline (consisting of many crystalline grains). More recently, steel alloys have been developed which can attain an amorphous microstructure, referred to as metallic glass. The metallic glass can in turn be treated to “devitrify” the glass and thereby form a crystalline structure which can, in some instances, be nanocrystalline (having crystal grains on the order of 10−9 meters).
- The particular alloy composition generally determines whether the alloy will solidify to form microcrystalline grain structures or amorphous glass. Conventional steels having microcrystalline grain structure can be produced to have a high hardness, although an increased hardness can be accompanied by a decrease in toughness utilizing conventional steel processing methods. Amorphous glass steel materials can be produced which can have exceptionally high strength and hardness. Additionally, amorphous steel can be devitrified to produce materials having nanocrystalline grains, and having an increased hardness relative to the glass. Further, nanocrystalline steel materials formed by devitrification of metallic glass can be produced which can achieve an increased hardness without a corresponding loss of toughness.
- The steel materials discussed above have high strength, and are highly resistant to wear and corrosion, relative to silicon materials. It is desirable to develop methods of coating silicon materials with steel materials and methods of metallizing silicon surfaces.
- In one aspect, the invention encompasses a method of forming a metallic coating on a substrate which contains silicon. The substrate has a silicon surface and a metallic glass layer is formed over the silicon surface. In one aspect the invention encompasses a method of protecting a substrate which contains silicon. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C.
- In one aspect the invention encompasses a structure including a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least about 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.
- Preferred embodiments of the invention are described below with reference to the following accompanying drawings.
-
FIG. 1 is a fragmentary, diagrammatic, cross sectional view of a substrate at a preliminary processing step of a method of the present invention. -
FIG. 2 is a view of theFIG. 1 substrate shown at a processing step subsequent to that ofFIG. 1 . -
FIG. 3 illustrates true-stress/true-strain measurements obtained from metallic ribbons comprising metallic glass of the composition (Fe0.8Cr0.2)81B17W2. The graph curves reflect data obtained at 20° C. at a strain rate of 10−3s−1. -
FIG. 4 is a scanned image of a coated silicon coupon which was coated by pulsed laser depositing a coating of approximately 1 micron thickness of composition (Fe0.8Cr0.2)73Mo2W2B16C4Si1Mn2. -
FIG. 5 shows an X-ray diffraction scan of the as-deposited coating shown inFIG. 4 . -
FIG. 6 shows an X-ray diffraction scan of the coated silicon coupon ofFIG. 4 which has been subsequently heat treated at 700° C. for 1 hour. -
FIG. 7 illustrates measured (Panel A) and Rietveld refined (calculated, Panel B) X-ray diffraction patterns of a pulsed laser deposited coating comprising the composition (Fe0.8Cr0.2)73Mo2W2B16C4Si1Mn2 after heat treating the coating for 1 hour at 700° C. -
FIG. 8 is a SEM micrograph of a coating deposited from a target comprising (Fe0.8Cr0.2)73Mo2W2B16C4Si1Mn2, formed by methods of the present invention utilizing pulsed laser deposition followed by treatment for 1 hour at 700° C. -
FIG. 9 shows an EDS scan taken at the surface of a heat treated coating which was formed by pulsed laser deposition from a target comprising the composition (Fe0.8Cr0.2)73Mo2W2B16C4Si1Mn2. - This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (
Article 1, Section 8). - The invention encompasses methodology for forming metallic glass materials and for forming materials having nanocrystalline scale composite microstructures over silicon substrates. For purposes of the present description, the term “silicon substrate” can refer to any structure or device comprising silicon. The silicon comprised by the substrate is not limited to a particular form and can comprise monocrystalline silicon, polycrystalline silicon, amorphous silicon, silicon oxide, silicon dioxide, silicon nitride, silicon carbide and combinations thereof. Additionally, the substrate can comprise any of the listed silicon materials in combination with other non-silicon materials.
- A process encompassed by the present invention is described generally with reference to
FIGS. 1 and 2 . Referring first toFIG. 1 , asubstrate 10 is provided for treatment of asurface 12.Substrate 10 comprises silicon and can further comprise additional materials as discussed above.Surface 12 can comprise a silicon surface such as, for example, a surface comprising monocrystalline silicon, polysilicon, amorphous silicon, silicon oxide, silicon dioxide, silicon nitride or silicon carbide. Alternatively,surface 12 can comprise a non-silicon material comprised by the silicon substrate such as, for example, a metallic material. Additionally,surface 12 can comprise a plurality of materials. For example,surface 12 can comprise two or more silicon comprising materials, can comprise two or more non-silicon materials or can comprise mixtures of silicon materials and non-silicon materials. Preferably, at least a portion ofsurface 12 comprises silicon. It can be advantageous forsurface 12 to comprise at least some silicon for enhancing adhesion of a subsequently deposited metallic layer (discussed below). -
Surface 12 can be planar as shown inFIG. 1 , or alternatively can be non-planar or patterned (not shown). A patternedsurface 12 can be provided by, for example, patterningsubstrate 10 utilizing conventional patterning techniques such as, for example, photolithography and/or etching techniques. - Referring to
FIG. 2 ,surface 12 can be treated by forming alayer 14 comprising a metallic material oversurface 12. Formation oflayer 14 can preferably comprise deposition utilizing an ablation technique. Exemplary ablation techniques which can be utilized for purposes of deposition oflayer 14 include pulsed laser deposition, sputtering and other conventional ablation techniques. The ablation deposition can utilize a single deposition target or multiple deposition targets. In particular aspects, multiple targets of differing composition can be utilized wherein the combination of differing compositions can be combined to form a desired total composition. Additionally, where a single target is utilized the single target can comprise a homogeneous ablation surface consisting of the composition to be deposited or can comprise a heterogeneous surface having regions of differing composition wherein the differing compositions can be combined to provide the desired total composition to be deposited. For purposes of the present description, the total composition to be ablated can be referred to as the source composition. Although depositedlayer 14 can preferably comprise a composition identical to the source composition, it is to be understood that the deposited composition can vary somewhat relative to the source material composition. - A source material for purposes of the present invention preferably comprises a steel material composition capable of forming a metallic glass. For purposes of interpreting this disclosure and the claims that follow, “steel” is defined as any iron-based alloy in which no other single element (other than iron) is present in an excess of 30 weight %, for which the iron content amounts to at least 55 weight % and carbon is limited to a maximum of 2 weight %. Steel alloys of can additionally incorporate other elements including, but not limited to, manganese, nickel, chromium, molybdenum, vanadium, silicon, aluminum, boron, phosphorous, sulfur, tungsten, and any of the rare earth metals.
- An exemplary steel composition comprises at least 55% iron, by weight, and can additionally comprise at least one of B, C, Si and P. In particular aspects of the present invention, the composition will comprise at least two of B, C, and Si. The composition can comprise each of C, B and Si and in particular embodiments can comprise B, C, and Si at an atomic ratio of B17C5Si1, or at an atomic ratio of B16C4Si1. In particular aspects of the invention, the composition can contain at least one transition metal, preferably selected from the group consisting of W, Mo, Cr, and Mn. Al and/or Gd can also be present in the composition in particular aspects of the invention. The particular composition of a steel alloy generally determines whether the alloy is capable of forming an amorphous glass (metallic glass) when the alloy solidifies.
- Compositions of the present invention preferably comprise fewer than eleven elements, and can more preferably comprise fewer than nine elements. Additionally, the composition can comprise as few as two elements. In particular embodiments, the mixture can consist essentially of fewer than eleven elements. Where a particularly pure composition is desired, the composition can consist of fewer than eleven elements. Further, the composition can consist essentially of, or can consist of as few as two elements. Generally, the steel compositions are composed of from four to eight elements.
- Exemplary steel compositions which can be utilized in the methodology of the present invention include Fe63Mo2Si1, Fe63Cr8Mo2, Fe63Mo2Al4, (Fe0.8Cr0.2)81B17W2, (Fe0.8Mo0.2)83B17, Fe63B17Si1, Fe63Cr8Mo2C5, Fe63Mo2C5, Fe80Mo20, Fe63Cr8Mo2B17, Fe83B17, Fe63B17Si5, Fe63B17C2, Fe63B17C3Si3, (Fe0.8Cr0.2)79B17W2C2, Fe63B17C3Si5, Fe63B17C2W2, Fe63B17C8, Fe63B17C5, Fe63B17C5Si5, (Fe0.8Cr0.2)78Mo2W2B12C5Si1, Fe63B17C5W5, (Fe0.8Cr0.2)71Mo2W2B17C5Si1Gd2, (Fe0.8Cr0.2)75Mo2B17C5Si1, (Fe0.8Cr0.2)76Mo2W2B14C5Si1, (Fe0.8Cr0.2)73Mo2W2B16C4Si1Mn2, Fe63B17C5Si1, Fe63Cr8Mo2B17C5, Fe63Cr8Mo2B17C5Si1Al4, (Fe0.8Cr0.2)75W2B17C5Si1, (Fe0.8Cr0.2)73Mo2W2B17C5Si1, (Fe0.8Cr0.2)72Mo2W2B17C5Si1Gd1, and (Fe0.8Cr0.2)74Mo2W2B17C4Si1.
- It can be advantageous to utilize the steel compositions as set forth above for forming
layer 14 due to the ability of the compositions to form super-hard steel coatings. These compositions have been shown to be able of forming metallic glass structures which may be transformed through a solid-solid state devitrification transformation to yield multiphase nanoscale composite microstructures. As deposited (prior to devitrification) these compositions can comprise up to 100% amorphous structure (metallic glass) and can typically have a hardness of at least about 9.2 GPa since all properties of the metallic glass formed of the composition have been determined by forming metallic glass ribbons of the composition to be tested. As shown inFIG. 3 , stress strain curves for metallic glass ribbons show that elongation as high as 60% is obtainable. Devitrification of the steel alloy compositions can further increase the hardness of the material. Additionally, devitrified ribbons have exhibited super plasticity having maximum elongation of up to about 180%. Yield strengths for the steel compositions have been measured as high as 2880 MPa with ultimate yield strengths of 3140 MPa and tensile elongation of 5% (FIG. 3 ) at room temperature. - Deposition targets for utilization for forming
layer 14 can be prepared by depositing the desired compositions onto a base such as a 4340 base steel coupon. Such target formation can utilize thermal deposition techniques including but not limited to high velocity oxyfuel (HVOF) deposition of the composition onto the base. Alternatively, other conventional methods of target formation can be utilized. - Still referring to
FIG. 2 ,layer 14 is not limited to any particular thickness and can preferably be performed to have a thickness of from about 10 Angstroms up to about 3 microns, more preferably from 0.5 microns to about 1.5 microns. Where pulsed laser deposition is utilized, a deposition rate can typically be about 10 Angstroms per second. It is to be understood that the methods of the present invention encompass other deposition techniques and rates, and that the preferable range of deposition rates may vary depending on the technique utilized. Accordingly, deposition time will vary based on the deposition conditions, the source composition, and the technique utilized. - The as-deposited coatings of the invention adhere well to silicon substrates when applied using ablation techniques. Although thermal deposition techniques, such as High Velocity Oxy Fuel (HVOF) deposition or plasma spray deposition, can be utilized to deposit steel coatings onto silicon substrate, the coatings formed by such thermal deposition methods adhere to silicon materials less strongly relative to those formed by ablation techniques. Steel coatings formed by ablation deposition under appropriate conditions adhere to the silicon substrate such that the coating remains adhered to the silicon surface after repeated attempts to scrape off the coating with a razor blade.
- Deposition temperature during the formation of
layer 14 can affect the strength of adhesion oflayer 14 to the underlying substrate. Where the deposition temperature is too high the steel composition deposited can dissolve some of the silicon into the steel, and where the deposition temperature is too low, themetallic layer 14 does not adhere as well relative to utilization of a higher deposition temperature. Additionally, uniformity, roughness and topography of an outer surface oflayer 14 can vary depending on deposition conditions. An appropriate deposition condition will depend upon the composition to be deposited, the composition ofsurface 12, and additional factors such as whethersubstrate 10 has been preheated prior to initiation of the deposition oflayer 14. -
FIG. 4 shows a scanned image of a surface of a silicon coupon coated with approximately 1 micron thickness of material deposited from a target having composition (Fe0.8Cr0.2)73Mo2W2B16C4Si1Mn2. The coating shown was deposited by pulsed laser deposition using a 200 mJ laser at 20 Hz. The scanned image was obtained from the layer as deposited (prior to any devitrification). The X-ray diffraction scan shown inFIG. 5 was performed on the as-deposited layer shown inFIG. 4 . InFIG. 5 , the broad peak centered near 45° indicates that an amorphous structure was formed. The single Bragg diffracted peak inFIG. 5 is due to the silicon substrate. - Prior to any subsequent treatment, as-deposited
layer 14 can comprise a microstructure that includes at least some metallic glass. The amount of amorphous structure withinlayer 14 will depend upon the deposition method, the deposition conditions and the composition of the source material. As discussed above,layer 14 can comprise a hardness of greater than about 9.2 GPa. Typically,layer 14 will comprise a hardness of between about 9.2 GPa and about 15.0 GPa. Depending upon the desired properties forcoating layer 14,substrate 10 can be utilized without further processing oflayer 14. Alternatively, the metallic material oflayer 14 can be further treated to devitrify some or all of the metallic glass present in the metallic material to form crystalline material having a nanocrystalline grain size. This solid-solid devitrification step can result in an increased hardness of the devitrified layer relative to the as-deposited layer. - Devitrification of the material of
layer 14 can comprise heat treatment of the as-deposited layer. The treatment can comprise heating the layer, or a portion of the layer, to a temperature above the crystallization temperature of the particular deposited steel composition and less than the melting temperature of the composition, and can comprise heating from between 1 minute to about 1,000 hours. Devitrification will typically compriseheating layer 14 from about 550° C. to about 850° C. for between about 10 minutes and about 1 hour. - Heat treatment of metallic glass material enables the solid state phase change wherein the amorphous metallic glass can be converted to one or more crystalline solid phases. The solid state devitrification of amorphous glass structure enables uniform nucleation to occur throughout the amorphous material to form nanocrystalline grains within the glass. The metallic matrix microstructures formed by devitrification can comprise a steel matrix (iron with dissolved interstitials) or a complex multi-phase matrix comprising several phases, one of which is ferrite. The nanocrystalline steel metal matrix composite grain structure can enable a combination of mechanical properties which are improved compared to the properties which would exist with larger grain sizes or with the metallic glass. Such improved mechanical properties can include, for example, high strength and high hardness, and for particular compositions of the present invention can include a maintained or even increased toughness relative to materials comprising larger grain sizes or comprising metallic glass.
- The resulting structure of devitrified material can comprise nanoscale grains comprising from about 50 to about 150 nanometer grain size. Additionally, the devitrified material can comprise second phase precipitates at grain boundaries having a precipitate size on the order of 20 nanometers.
FIGS. 6 , 7, 8 and 9 show data obtained after devitrification of the as-deposited layer (shown inFIG. 4 ) according to methods of the present invention. The as deposited layer was heat treated at 700° C. for one hour. The X-ray diffraction scan shown inFIG. 6 reveals many sharp crystalline peaks indicated that several nanoscale phases formed in the devitrified material. - Referring to
FIG. 7 , an X-ray diffraction data pattern shown in Panel A was obtained from the heat treated coating and was in turn refined as shown in Panel B to identify the nanocomposite structure which is summarized in Table 1. -
TABLE 1 Phase Information for a Devitrified Coating Deposited from A Target of Composition (Fe0.8Cr0.2)73Mo2W2B16C4Si1Mn2 PHASE Crystal Structure Space Group Lattice Parameters (Å) α-Fe cubic Im3m a = 2.867 Fe23C6 cubic Fm3m a = 10.614 Fe3B tetragonal I-4 a = 8.636; c = 4.267 Fe2B tetragonal I4/mcm a = 5.083; c = 4.222 - The microstructure of the heat treated coating was found to consist of four phases (α-Fe, Fe23C6, Fe3B and Fe2B). These results are similar to those obtained previously from a coating formed by HVOF. The present analysis indicated an additional phase (Fe2B) in the coating formed by pulsed laser deposition relative to the HVOF coating. This additional phase is not unusual in alloys of this type and is the stable phase in the Fe-B binary system.
- The surface of the heat treated
layer 14 was observed utilizing SEM to determine uniformity of the coating as shown inFIG. 8 . The majority of the structure appears uniform on a 200 nm length scale with some larger particles and particle boundaries apparent. An EDS scan shown inFIG. 9 was taken at the surface of the heat treatedlayer 14. The EDS scan positively identified Fe, Cr, W and Si with minor peaks present at the Mo and Mn positions. - The data obtained for the as-formed and devitrified coatings indicate the ability of the compositions to form metallic glass upon ablation deposition and to form nanocrystalline microstructure upon devitrification.
- Coatings formed by methodology of the present invention can be utilized for protecting surfaces comprising silicon, for protecting non-silicon surfaces comprised by a silicon-containing structure, can be utilized for providing support and/or mechanical strength to silicon comprising devices and can impart wear resistance to silicon comprising structures. Although the coatings of the invention are described as being useful with respect to silicon surfaces and materials, the coatings can be useful for protecting other semiconductor surfaces including those in GaAs based semiconductors as well. Exemplary technologies to which the methods and coatings of the invention may be especially useful include, but are not limited to, semiconductor devices, microelectromechanical systems, and integrated micromechanical systems-on-a-chip. Additionally, use of the materials of the invention is not limited to coatings since these materials can be used to form structural features in any of these devices as well.
- In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.
Claims (16)
1. A metal coated substrate comprising:
a substrate having a silicon-comprising surface; and
a metallic coating adhered to at least a portion of the silicon-comprising surface, the metallic coating comprising at least 55% Fe, and from 0% to about 2% C by weight.
2. The metal coated substrate of claim 1 wherein the metallic coating further comprises at least one member of the group consisting of C, P, Si, and B.
3. The metal coated substrate of claim 11 wherein the metallic coating comprises a metallic material selected from the group consisting of Fe63Mo2Si1, Fe63Cr8Mo2, Fe63Mo2Al4, (Fe0.8Cr0.2)81B17, Fe63B17Si1, Fe63Cr8Mo2C5, Fe63Mo2C5, Fe80Mo20, Fe63Cr8Mo2B17, Fe83B17, Fe63B17Si5, Fe63B17C2, Fe63B17C3Si3, (Fe0.8Cr0.2)79B17W2C2, Fe63B17C3Si5, Fe63B17C2W2, Fe63B17C8, Fe63B17C5, (Fe0.8Cr0.2)78Mo2W2B12C5Si1, Fe63B17C5W5, Fe63B17C5Si5, (Fe0.8Cr0.2)76Mo2W2B14C5Si1, (Fe0.8Cr0.2)73Mo2W2B16C4Si1,Mn2, Fe63Cr8Mo2B17C5, (Fe0.8Cr0.2)75Mo2B17C5Si1, Fe63Cr8Mo2B17C5Si1Al4, (Fe0.8Cr0.2)75W2B17C5Si1, Fe63B17C5Si1, (Fe0.8Cr0.2)73Mo2W2B17C5Si1, (Fe0.8Cr0.2)72Mo2W2B17C5Si1Gd1, (Fe0.8Cr0.2)71Mo2W2B17C5Si1,Gd2, and (Fe0.8Cr0.2)74Mo2W2B17C4Si1.
4. The metal-coated substrate of claim 1 wherein the silicon-comprising surface comprises a member of the group consisting of monocrystalline silicon, polysilicon, silicon oxide and silicon dioxide.
5. A silicon-comprising structure comprising:
a substrate comprising silicon; and
a metallic layer over the substrate, the metallic layer comprising less than or equal to about 2 weight percent carbon and having a hardness of at least about 9.2 GPa.
6. The structure of claim 5 wherein the metallic layer comprises metallic glass.
7. The structure of claim 5 wherein the metallic layer comprises nanocrystalline microstructure.
8. The structure of claim 5 wherein the substrate comprises a silicon surface and wherein the metallic layer is deposited onto the silicon surface.
9. A protected silicon surface comprising
a layer of metal material over a silicon surface, the layer of metal material comprising:
at least 55% Fe; and
a hardness of at least about 9.2 GPa.
10. The protected silicon surface of claim 9 wherein the silicon surface is planar.
11. The protected silicon surface of claim 9 wherein the silicon surface comprises silicon oxide.
12. The protected silicon surface of claim 9 wherein the silicon surface is non-planar.
13. The protected silicon surface of claim 9 wherein the silicon surface is a patterned surface.
14. The protected silicon surface of claim 9 wherein the metal material comprises metallic glass.
15. The protected silicon surface of claim 9 wherein the metal material comprises a nanocrystalline grain size.
16. The protected silicon surface of claim 9 layer of metal material comprises a thickness of from about 10 Å to about 3 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/013,543 US20080160266A1 (en) | 2004-01-27 | 2008-01-14 | Metallic coatings on silicon substrates |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76671304A | 2004-01-27 | 2004-01-27 | |
| US10/918,287 US7341765B2 (en) | 2004-01-27 | 2004-08-13 | Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates |
| US12/013,543 US20080160266A1 (en) | 2004-01-27 | 2008-01-14 | Metallic coatings on silicon substrates |
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| US10/918,287 Division US7341765B2 (en) | 2004-01-27 | 2004-08-13 | Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates |
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| Publication Number | Publication Date |
|---|---|
| US20080160266A1 true US20080160266A1 (en) | 2008-07-03 |
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| US12/013,543 Abandoned US20080160266A1 (en) | 2004-01-27 | 2008-01-14 | Metallic coatings on silicon substrates |
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| EP (1) | EP1776229A4 (en) |
| WO (1) | WO2006022864A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090322071A1 (en) * | 2006-06-27 | 2009-12-31 | Giesecke & Devrient Gmbh | Security Element |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6689234B2 (en) | 2000-11-09 | 2004-02-10 | Bechtel Bwxt Idaho, Llc | Method of producing metallic materials |
| US6998156B2 (en) * | 2002-01-29 | 2006-02-14 | The United States Of America As Represented By The Secretary Of The Navy | Deposition of thin films using an infrared laser |
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| EP2425032A4 (en) * | 2009-04-30 | 2016-07-13 | Chevron Usa Inc | Surface treatment of amorphous coatings |
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| CN106927420B (en) * | 2015-12-29 | 2018-11-27 | 中国科学院物理研究所 | A method of preparing the three-dimensional sight device that is situated between |
| US20210164081A1 (en) | 2018-03-29 | 2021-06-03 | Oerlikon Metco (Us) Inc. | Reduced carbides ferrous alloys |
| JP7641218B2 (en) | 2018-10-26 | 2025-03-06 | エリコン メテコ(ユーエス)インコーポレイテッド | Corrosion and wear resistant nickel-based alloy |
| CN113631750A (en) | 2019-03-28 | 2021-11-09 | 欧瑞康美科(美国)公司 | Thermally sprayed iron-based alloys for coating engine cylinder bores |
| EP3962693A1 (en) | 2019-05-03 | 2022-03-09 | Oerlikon Metco (US) Inc. | Powder feedstock for wear resistant bulk welding configured to optimize manufacturability |
Citations (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3452419A (en) * | 1964-09-07 | 1969-07-01 | Elektriska Svetsnings Ab | Method of making a tubular welding wire of welding rod enclosing a core composed of powdered constituents |
| US3472686A (en) * | 1964-09-07 | 1969-10-14 | Elektriska Svetsnings Ab | Method of making coated arc welding electrodes |
| US3856513A (en) * | 1972-12-26 | 1974-12-24 | Allied Chem | Novel amorphous metals and amorphous metal articles |
| US3986867A (en) * | 1974-01-12 | 1976-10-19 | The Research Institute For Iron, Steel And Other Metals Of The Tohoku University | Iron-chromium series amorphous alloys |
| US3989517A (en) * | 1974-10-30 | 1976-11-02 | Allied Chemical Corporation | Titanium-beryllium base amorphous alloys |
| US4144058A (en) * | 1974-09-12 | 1979-03-13 | Allied Chemical Corporation | Amorphous metal alloys composed of iron, nickel, phosphorus, boron and, optionally carbon |
| US4236946A (en) * | 1978-03-13 | 1980-12-02 | International Business Machines Corporation | Amorphous magnetic thin films with highly stable easy axis |
| US4290808A (en) * | 1979-03-23 | 1981-09-22 | Allied Chemical Corporation | Metallic glass powders from glassy alloys |
| US4365994A (en) * | 1979-03-23 | 1982-12-28 | Allied Corporation | Complex boride particle containing alloys |
| US4372989A (en) * | 1979-06-20 | 1983-02-08 | Siemens Aktiengesellschaft | Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films |
| US4386896A (en) * | 1979-03-23 | 1983-06-07 | Allied Corporation | Apparatus for making metallic glass powder |
| US4398342A (en) * | 1981-04-14 | 1983-08-16 | International Standard Electric Corporation | Method of making a Hall effect device |
| US4439236A (en) * | 1979-03-23 | 1984-03-27 | Allied Corporation | Complex boride particle containing alloys |
| US4473401A (en) * | 1982-06-04 | 1984-09-25 | Tsuyoshi Masumoto | Amorphous iron-based alloy excelling in fatigue property |
| US4523621A (en) * | 1982-02-18 | 1985-06-18 | Allied Corporation | Method for making metallic glass powder |
| US4576653A (en) * | 1979-03-23 | 1986-03-18 | Allied Corporation | Method of making complex boride particle containing alloys |
| US4578123A (en) * | 1984-05-16 | 1986-03-25 | Siemens Aktiengesellschaft | Method for manufacturing a metallic body using an amorphous alloy |
| US4581081A (en) * | 1984-09-14 | 1986-04-08 | The United States Of America As Represented By The United States Department Of Energy | Metallic glass composition |
| US4594104A (en) * | 1985-04-26 | 1986-06-10 | Allied Corporation | Consolidated articles produced from heat treated amorphous bulk parts |
| US4621031A (en) * | 1984-11-16 | 1986-11-04 | Dresser Industries, Inc. | Composite material bonded by an amorphous metal, and preparation thereof |
| US4631617A (en) * | 1982-09-14 | 1986-12-23 | Kokusai Denshin Denwa Kabushiki Kaisha | Magneto-optical recording medium |
| US4634306A (en) * | 1982-11-27 | 1987-01-06 | Firma J.S. Staedtler | Writing point for writing or recording instruments and process for its manufacture |
| US4639543A (en) * | 1985-02-04 | 1987-01-27 | Richard J. Birch | Semiconductor devices having a metallic glass substrate |
| US4677036A (en) * | 1985-01-29 | 1987-06-30 | Sharp Kabushiki Kaisha | Method of production of thin film magnetic head and magnetic head |
| US4725512A (en) * | 1984-06-08 | 1988-02-16 | Dresser Industries, Inc. | Materials transformable from the nonamorphous to the amorphous state under frictional loadings |
| US4741974A (en) * | 1986-05-20 | 1988-05-03 | The Perkin-Elmer Corporation | Composite wire for wear resistant coatings |
| US4820141A (en) * | 1986-12-12 | 1989-04-11 | Nippon Steel Corporation | Method for the manufacture of formed products from powders, foils, or fine wires |
| US4822415A (en) * | 1985-11-22 | 1989-04-18 | Perkin-Elmer Corporation | Thermal spray iron alloy powder containing molybdenum, copper and boron |
| USRE32925E (en) * | 1972-12-26 | 1989-05-18 | Allied-Signal Inc. | Novel amorphous metals and amorphous metal articles |
| US4857391A (en) * | 1987-12-22 | 1989-08-15 | Scapa Inc. | Non-woven paper machine dryer fabric without slack edges |
| US4921410A (en) * | 1987-07-29 | 1990-05-01 | Nippondenso Co., Ltd. | Method of producing a compact of amorphous alloys |
| US4964967A (en) * | 1986-09-22 | 1990-10-23 | Daiki Engineering Co., Ltd. | Surface activated alloy electrodes and process for preparing them |
| US5130103A (en) * | 1987-08-24 | 1992-07-14 | Canon Kabushiki Kaisha | Method for forming semiconductor crystal and semiconductor crystal article obtained by said method |
| US5176806A (en) * | 1989-03-08 | 1993-01-05 | Alps Electric Co., Ltd. | Soft magnetic alloy film |
| US5203929A (en) * | 1990-07-24 | 1993-04-20 | Toyota Jidosha Kabushiki Kaisha | Method of producing amorphous magnetic film |
| US5236791A (en) * | 1988-08-31 | 1993-08-17 | Hitachi, Ltd. | Magnetic recording medium and magnetic storage |
| US5294462A (en) * | 1990-11-08 | 1994-03-15 | Air Products And Chemicals, Inc. | Electric arc spray coating with cored wire |
| US5332628A (en) * | 1993-01-07 | 1994-07-26 | Wear Management Services, Inc. | Iron based ductile wire for forming a surfacing alloy system |
| US5376191A (en) * | 1992-05-22 | 1994-12-27 | Neyrpic | Amorphous alloy-based metallic finishes having wear and corrosion resistance |
| US5527401A (en) * | 1993-06-30 | 1996-06-18 | Samsung Heavy Industry Co., Ltd. | High toughness and high strength untempered steel and processing method thereof |
| US5589011A (en) * | 1995-02-15 | 1996-12-31 | The University Of Connecticut | Nanostructured steel alloy |
| US5643531A (en) * | 1989-12-12 | 1997-07-01 | Samsung Heavy Industry Co., Ltd. | Ferrous alloy composition and manufacture and coating methods of mechanical products using the same |
| US5984996A (en) * | 1995-02-15 | 1999-11-16 | The University Of Connecticut | Nanostructured metals, metal carbides, and metal alloys |
| US5998048A (en) * | 1998-03-02 | 1999-12-07 | Lucent Technologies Inc. | Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films |
| US6083570A (en) * | 1987-03-31 | 2000-07-04 | Lemelson; Jerome H. | Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings |
| US6103997A (en) * | 1996-07-15 | 2000-08-15 | Pan; Guoxi | High hardness and wear-resisting flux cored wire |
| US6156391A (en) * | 1999-06-14 | 2000-12-05 | Rankin Industries, Inc. | Process for hard facing a metallic substrate to improve wear resistance |
| US6258185B1 (en) * | 1999-05-25 | 2001-07-10 | Bechtel Bwxt Idaho, Llc | Methods of forming steel |
| US6261386B1 (en) * | 1997-06-30 | 2001-07-17 | Wisconsin Alumni Research Foundation | Nanocrystal dispersed amorphous alloys |
| US6264759B1 (en) * | 1998-10-16 | 2001-07-24 | Pohang Iron & Steel Co., Ltd. | Wire rods with superior drawability and manufacturing method therefor |
| US6270591B2 (en) * | 1995-12-27 | 2001-08-07 | Inst De Fizica Tehnica | Amorphous and nanocrystalline glass-covered wires |
| US6387530B1 (en) * | 1999-08-27 | 2002-05-14 | Seagate Technology Llc | Patterned magnetic media via thermally induced phase transition |
| US20020072191A1 (en) * | 2000-11-24 | 2002-06-13 | Nec Corporation | Manufacturing method of semiconductor device |
| US20020158540A1 (en) * | 2000-10-16 | 2002-10-31 | Lindquist Scott M. | Laminated amorphous metal component for an electric machine |
| US20030051781A1 (en) * | 2000-11-09 | 2003-03-20 | Branagan Daniel J. | Hard metallic materials, hard metallic coatings, methods of processing metallic materials and methods of producing metallic coatings |
| US20030114698A1 (en) * | 2001-12-10 | 2003-06-19 | Keller Teddy M. | Polymeric and carbon compositions with metal nanoparticles |
| US6767419B1 (en) * | 2000-11-09 | 2004-07-27 | Bechtel Bwxt Idaho, Llc | Methods of forming hardened surfaces |
| US6773817B1 (en) * | 1998-12-22 | 2004-08-10 | Mtu Aero Engines Gmbh | Antiabrasion coating |
| US20040157066A1 (en) * | 2003-02-07 | 2004-08-12 | Arzoumanidis G. Alexis | Method of applying a hardcoating typically provided on downhole tools, and a system and apparatus having such a hardcoating |
| US20060049478A1 (en) * | 2003-01-16 | 2006-03-09 | Hiroshi Yamada | Photoelectric converter, photoelectric conversion device and iron silicide film |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57185927A (en) * | 1981-05-08 | 1982-11-16 | Sumitomo Metal Ind Ltd | Formation of amorphous inside circumferential surface of steel pipe |
| JPS583979A (en) * | 1981-07-01 | 1983-01-10 | Mitsubishi Heavy Ind Ltd | Production of corrosion- and erosion resistant member |
| JPS60223153A (en) * | 1984-04-19 | 1985-11-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device with mis type capacitor and manufacture thereof |
| US4721987A (en) * | 1984-07-03 | 1988-01-26 | Texas Instruments Incorporated | Trench capacitor process for high density dynamic RAM |
| US4758993A (en) * | 1984-11-19 | 1988-07-19 | Fujitsu Limited | Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays |
| JPH07116565B2 (en) * | 1985-01-24 | 1995-12-13 | 日本電装株式会社 | Magnetostrictive layer forming method and torque sensor using the magnetostrictive layer |
| JPS61186415A (en) * | 1985-02-14 | 1986-08-20 | Mitsubishi Heavy Ind Ltd | Improvement of surface material quality of metallic stock |
| JPS62136069A (en) * | 1985-12-10 | 1987-06-19 | Hitachi Ltd | Semiconductor device and its manufacturing method |
| US4920517A (en) * | 1986-04-24 | 1990-04-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device having sub bit lines |
| JPH06101229B2 (en) * | 1986-09-09 | 1994-12-12 | 三菱電機株式会社 | Dynamic random access memory |
| US4801988A (en) * | 1986-10-31 | 1989-01-31 | International Business Machines Corporation | Semiconductor trench capacitor cell with merged isolation and node trench construction |
| US5226147A (en) * | 1987-11-06 | 1993-07-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device for simple cache system |
| JPH01183000A (en) * | 1988-01-14 | 1989-07-20 | Mitsubishi Electric Corp | Semiconductor memory device with error correction circuit |
| JPH01259181A (en) * | 1988-04-08 | 1989-10-16 | Mitsubishi Heavy Ind Ltd | Method for making surface of metal amorphous |
| JPH01275717A (en) | 1988-04-28 | 1989-11-06 | Hitachi Metals Ltd | Manufacture of fine crystal alloy |
| JPH01290753A (en) * | 1988-05-16 | 1989-11-22 | Nippon Telegr & Teleph Corp <Ntt> | Production of amorphous alloy-coated metallic material |
| US5297097A (en) * | 1988-06-17 | 1994-03-22 | Hitachi Ltd. | Large scale integrated circuit for low voltage operation |
| US5023838A (en) * | 1988-12-02 | 1991-06-11 | Ncr Corporation | Random access memory device with integral logic capability |
| CA2011518C (en) * | 1989-04-25 | 1993-04-20 | Ronald N. Fortino | Distributed cache dram chip and control method |
| US5134616A (en) * | 1990-02-13 | 1992-07-28 | International Business Machines Corporation | Dynamic ram with on-chip ecc and optimized bit and word redundancy |
| US5307356A (en) * | 1990-04-16 | 1994-04-26 | International Business Machines Corporation | Interlocked on-chip ECC system |
| US5120675A (en) * | 1990-06-01 | 1992-06-09 | Texas Instruments Incorporated | Method for forming a trench within a semiconductor layer of material |
| JPH04307495A (en) * | 1991-04-04 | 1992-10-29 | Mitsubishi Electric Corp | Semiconductor storage device |
| US5276843A (en) * | 1991-04-12 | 1994-01-04 | Micron Technology, Inc. | Dynamic RAM array for emulating a static RAM array |
| JP2745252B2 (en) * | 1991-06-24 | 1998-04-28 | 三菱電機株式会社 | Semiconductor storage device |
| EP0552667B1 (en) * | 1992-01-22 | 1999-04-21 | Enhanced Memory Systems, Inc. | Enhanced dram with embedded registers |
| JP3070025B2 (en) * | 1992-02-04 | 2000-07-24 | 富士通株式会社 | Semiconductor storage device |
| US5365487A (en) * | 1992-03-24 | 1994-11-15 | Texas Instruments Incorporated | DRAM power management with self-refresh |
| WO1995035572A1 (en) * | 1994-06-20 | 1995-12-28 | Neomagic Corporation | Graphics controller integrated circuit without memory interface |
| US5600598A (en) * | 1994-12-14 | 1997-02-04 | Mosaid Technologies Incorporated | Memory cell and wordline driver for embedded DRAM in ASIC process |
| US5471421A (en) * | 1994-12-16 | 1995-11-28 | Sun Microsystems, Inc. | Storage cell using low powered/low threshold CMOS pass transistors having reduced charge leakage |
| US5547893A (en) * | 1995-12-27 | 1996-08-20 | Vanguard International Semiconductor Corp. | method for fabricating an embedded vertical bipolar transistor and a memory cell |
| US5702988A (en) * | 1996-05-02 | 1997-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Blending integrated circuit technology |
| US5712201A (en) * | 1996-06-07 | 1998-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication method for integrating logic and single level polysilicon DRAM devices on the same semiconductor chip |
| US6084274A (en) * | 1996-09-27 | 2000-07-04 | Sony Corporation | Semiconductor memory cell and its fabrication process |
| TW382705B (en) * | 1996-10-21 | 2000-02-21 | Texas Instruments Inc | Error correcting memory |
| JPH10135424A (en) * | 1996-11-01 | 1998-05-22 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
| US5978952A (en) * | 1996-12-31 | 1999-11-02 | Intel Corporation | Time-distributed ECC scrubbing to correct memory errors |
| US6016268A (en) * | 1997-02-18 | 2000-01-18 | Richard Mann | Three transistor multi-state dynamic memory cell for embedded CMOS logic applications |
| JPH10306353A (en) | 1997-04-30 | 1998-11-17 | Nippon Piston Ring Co Ltd | Synchronizer ring |
| US5910735A (en) * | 1997-05-22 | 1999-06-08 | International Business Machines Corporation | Method and apparatus for safe mode in dynamic logic using dram cell |
| JPH1197649A (en) * | 1997-09-25 | 1999-04-09 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
| US5943270A (en) * | 1997-11-26 | 1999-08-24 | Intel Corporation | Two-transistor DRAM cell for logic process technology |
| US6207991B1 (en) * | 1998-03-20 | 2001-03-27 | Cypress Semiconductor Corp. | Integrated non-volatile and CMOS memories having substantially the same thickness gates and methods of forming the same |
| US5959914A (en) * | 1998-03-27 | 1999-09-28 | Lsi Logic Corporation | Memory controller with error correction memory test application |
| US6822277B2 (en) * | 2000-08-24 | 2004-11-23 | Rohm Co. Ltd. | Semiconductor device and method for manufacturing the same |
-
2004
- 2004-08-13 US US10/918,287 patent/US7341765B2/en not_active Expired - Fee Related
-
2005
- 2005-03-25 EP EP05743466A patent/EP1776229A4/en not_active Withdrawn
- 2005-03-25 WO PCT/US2005/010525 patent/WO2006022864A2/en not_active Ceased
-
2008
- 2008-01-14 US US12/013,543 patent/US20080160266A1/en not_active Abandoned
Patent Citations (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3452419A (en) * | 1964-09-07 | 1969-07-01 | Elektriska Svetsnings Ab | Method of making a tubular welding wire of welding rod enclosing a core composed of powdered constituents |
| US3472686A (en) * | 1964-09-07 | 1969-10-14 | Elektriska Svetsnings Ab | Method of making coated arc welding electrodes |
| US3856513A (en) * | 1972-12-26 | 1974-12-24 | Allied Chem | Novel amorphous metals and amorphous metal articles |
| USRE32925E (en) * | 1972-12-26 | 1989-05-18 | Allied-Signal Inc. | Novel amorphous metals and amorphous metal articles |
| US3986867A (en) * | 1974-01-12 | 1976-10-19 | The Research Institute For Iron, Steel And Other Metals Of The Tohoku University | Iron-chromium series amorphous alloys |
| US4144058A (en) * | 1974-09-12 | 1979-03-13 | Allied Chemical Corporation | Amorphous metal alloys composed of iron, nickel, phosphorus, boron and, optionally carbon |
| US3989517A (en) * | 1974-10-30 | 1976-11-02 | Allied Chemical Corporation | Titanium-beryllium base amorphous alloys |
| US4236946A (en) * | 1978-03-13 | 1980-12-02 | International Business Machines Corporation | Amorphous magnetic thin films with highly stable easy axis |
| US4365994A (en) * | 1979-03-23 | 1982-12-28 | Allied Corporation | Complex boride particle containing alloys |
| US4386896A (en) * | 1979-03-23 | 1983-06-07 | Allied Corporation | Apparatus for making metallic glass powder |
| US4439236A (en) * | 1979-03-23 | 1984-03-27 | Allied Corporation | Complex boride particle containing alloys |
| US4290808A (en) * | 1979-03-23 | 1981-09-22 | Allied Chemical Corporation | Metallic glass powders from glassy alloys |
| US4576653A (en) * | 1979-03-23 | 1986-03-18 | Allied Corporation | Method of making complex boride particle containing alloys |
| US4372989A (en) * | 1979-06-20 | 1983-02-08 | Siemens Aktiengesellschaft | Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films |
| US4398342A (en) * | 1981-04-14 | 1983-08-16 | International Standard Electric Corporation | Method of making a Hall effect device |
| US4523621A (en) * | 1982-02-18 | 1985-06-18 | Allied Corporation | Method for making metallic glass powder |
| US4473401A (en) * | 1982-06-04 | 1984-09-25 | Tsuyoshi Masumoto | Amorphous iron-based alloy excelling in fatigue property |
| US4631617A (en) * | 1982-09-14 | 1986-12-23 | Kokusai Denshin Denwa Kabushiki Kaisha | Magneto-optical recording medium |
| US4634306A (en) * | 1982-11-27 | 1987-01-06 | Firma J.S. Staedtler | Writing point for writing or recording instruments and process for its manufacture |
| US4578123A (en) * | 1984-05-16 | 1986-03-25 | Siemens Aktiengesellschaft | Method for manufacturing a metallic body using an amorphous alloy |
| US4725512A (en) * | 1984-06-08 | 1988-02-16 | Dresser Industries, Inc. | Materials transformable from the nonamorphous to the amorphous state under frictional loadings |
| US4581081A (en) * | 1984-09-14 | 1986-04-08 | The United States Of America As Represented By The United States Department Of Energy | Metallic glass composition |
| US4621031A (en) * | 1984-11-16 | 1986-11-04 | Dresser Industries, Inc. | Composite material bonded by an amorphous metal, and preparation thereof |
| US4677036A (en) * | 1985-01-29 | 1987-06-30 | Sharp Kabushiki Kaisha | Method of production of thin film magnetic head and magnetic head |
| US4639543A (en) * | 1985-02-04 | 1987-01-27 | Richard J. Birch | Semiconductor devices having a metallic glass substrate |
| US4594104A (en) * | 1985-04-26 | 1986-06-10 | Allied Corporation | Consolidated articles produced from heat treated amorphous bulk parts |
| US4822415A (en) * | 1985-11-22 | 1989-04-18 | Perkin-Elmer Corporation | Thermal spray iron alloy powder containing molybdenum, copper and boron |
| US4741974A (en) * | 1986-05-20 | 1988-05-03 | The Perkin-Elmer Corporation | Composite wire for wear resistant coatings |
| US4964967A (en) * | 1986-09-22 | 1990-10-23 | Daiki Engineering Co., Ltd. | Surface activated alloy electrodes and process for preparing them |
| US4820141A (en) * | 1986-12-12 | 1989-04-11 | Nippon Steel Corporation | Method for the manufacture of formed products from powders, foils, or fine wires |
| US6083570A (en) * | 1987-03-31 | 2000-07-04 | Lemelson; Jerome H. | Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings |
| US4921410A (en) * | 1987-07-29 | 1990-05-01 | Nippondenso Co., Ltd. | Method of producing a compact of amorphous alloys |
| US5130103A (en) * | 1987-08-24 | 1992-07-14 | Canon Kabushiki Kaisha | Method for forming semiconductor crystal and semiconductor crystal article obtained by said method |
| US4857391A (en) * | 1987-12-22 | 1989-08-15 | Scapa Inc. | Non-woven paper machine dryer fabric without slack edges |
| US5236791A (en) * | 1988-08-31 | 1993-08-17 | Hitachi, Ltd. | Magnetic recording medium and magnetic storage |
| US5176806A (en) * | 1989-03-08 | 1993-01-05 | Alps Electric Co., Ltd. | Soft magnetic alloy film |
| US5643531A (en) * | 1989-12-12 | 1997-07-01 | Samsung Heavy Industry Co., Ltd. | Ferrous alloy composition and manufacture and coating methods of mechanical products using the same |
| US5203929A (en) * | 1990-07-24 | 1993-04-20 | Toyota Jidosha Kabushiki Kaisha | Method of producing amorphous magnetic film |
| US5294462A (en) * | 1990-11-08 | 1994-03-15 | Air Products And Chemicals, Inc. | Electric arc spray coating with cored wire |
| US5376191A (en) * | 1992-05-22 | 1994-12-27 | Neyrpic | Amorphous alloy-based metallic finishes having wear and corrosion resistance |
| US5332628A (en) * | 1993-01-07 | 1994-07-26 | Wear Management Services, Inc. | Iron based ductile wire for forming a surfacing alloy system |
| US5527401A (en) * | 1993-06-30 | 1996-06-18 | Samsung Heavy Industry Co., Ltd. | High toughness and high strength untempered steel and processing method thereof |
| US5589011A (en) * | 1995-02-15 | 1996-12-31 | The University Of Connecticut | Nanostructured steel alloy |
| US5984996A (en) * | 1995-02-15 | 1999-11-16 | The University Of Connecticut | Nanostructured metals, metal carbides, and metal alloys |
| US6270591B2 (en) * | 1995-12-27 | 2001-08-07 | Inst De Fizica Tehnica | Amorphous and nanocrystalline glass-covered wires |
| US6103997A (en) * | 1996-07-15 | 2000-08-15 | Pan; Guoxi | High hardness and wear-resisting flux cored wire |
| US6261386B1 (en) * | 1997-06-30 | 2001-07-17 | Wisconsin Alumni Research Foundation | Nanocrystal dispersed amorphous alloys |
| US5998048A (en) * | 1998-03-02 | 1999-12-07 | Lucent Technologies Inc. | Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films |
| US6264759B1 (en) * | 1998-10-16 | 2001-07-24 | Pohang Iron & Steel Co., Ltd. | Wire rods with superior drawability and manufacturing method therefor |
| US6773817B1 (en) * | 1998-12-22 | 2004-08-10 | Mtu Aero Engines Gmbh | Antiabrasion coating |
| US6258185B1 (en) * | 1999-05-25 | 2001-07-10 | Bechtel Bwxt Idaho, Llc | Methods of forming steel |
| US6156391A (en) * | 1999-06-14 | 2000-12-05 | Rankin Industries, Inc. | Process for hard facing a metallic substrate to improve wear resistance |
| US6387530B1 (en) * | 1999-08-27 | 2002-05-14 | Seagate Technology Llc | Patterned magnetic media via thermally induced phase transition |
| US20020158540A1 (en) * | 2000-10-16 | 2002-10-31 | Lindquist Scott M. | Laminated amorphous metal component for an electric machine |
| US20030051781A1 (en) * | 2000-11-09 | 2003-03-20 | Branagan Daniel J. | Hard metallic materials, hard metallic coatings, methods of processing metallic materials and methods of producing metallic coatings |
| US6689234B2 (en) * | 2000-11-09 | 2004-02-10 | Bechtel Bwxt Idaho, Llc | Method of producing metallic materials |
| US6767419B1 (en) * | 2000-11-09 | 2004-07-27 | Bechtel Bwxt Idaho, Llc | Methods of forming hardened surfaces |
| US7067022B2 (en) * | 2000-11-09 | 2006-06-27 | Battelle Energy Alliance, Llc | Method for protecting a surface |
| US20020072191A1 (en) * | 2000-11-24 | 2002-06-13 | Nec Corporation | Manufacturing method of semiconductor device |
| US20030114698A1 (en) * | 2001-12-10 | 2003-06-19 | Keller Teddy M. | Polymeric and carbon compositions with metal nanoparticles |
| US20060049478A1 (en) * | 2003-01-16 | 2006-03-09 | Hiroshi Yamada | Photoelectric converter, photoelectric conversion device and iron silicide film |
| US20040157066A1 (en) * | 2003-02-07 | 2004-08-12 | Arzoumanidis G. Alexis | Method of applying a hardcoating typically provided on downhole tools, and a system and apparatus having such a hardcoating |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090322071A1 (en) * | 2006-06-27 | 2009-12-31 | Giesecke & Devrient Gmbh | Security Element |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006022864A3 (en) | 2006-12-07 |
| EP1776229A4 (en) | 2009-03-25 |
| WO2006022864A2 (en) | 2006-03-02 |
| US7341765B2 (en) | 2008-03-11 |
| US20050164016A1 (en) | 2005-07-28 |
| EP1776229A2 (en) | 2007-04-25 |
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