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US20080066677A1 - Semiconductor manufacturing system - Google Patents

Semiconductor manufacturing system Download PDF

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Publication number
US20080066677A1
US20080066677A1 US11/802,358 US80235807A US2008066677A1 US 20080066677 A1 US20080066677 A1 US 20080066677A1 US 80235807 A US80235807 A US 80235807A US 2008066677 A1 US2008066677 A1 US 2008066677A1
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Prior art keywords
film
gas
nozzle
forming
coating
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Abandoned
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US11/802,358
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English (en)
Inventor
Yuichiro Morozumi
Kenichi Koyanagi
Takashi Arao
Kazunori Une
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Tokyo Electron Ltd
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Individual
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MOROZUMI, YUICHIRO, UNE, KAZUNORI, ARAO, TAKASHI, KOYANAGI, KENICHI
Publication of US20080066677A1 publication Critical patent/US20080066677A1/en
Priority to US12/766,319 priority Critical patent/US8277891B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium

Definitions

  • the present invention relates to semiconductor manufacturing system and particularly to coating apparatus for forming a film of a desired thickness by repeating atomic or molecular level deposition. More particularly, the Invention relates to a technique of effectively precoating the inside of the reaction vessel to prevent the generation of particles.
  • DRAM 1-gigabit dynamic random access memory
  • Such large capacity DRAM employs elements reduced in dimension and hence in surface area.
  • DRAM uses the amount of charge stored on its memory cell capacitors as stored information, these capacitors must have a capacitance greater than a certain value. Therefore, memory cell capacitors currently have a very high aspect ratio.
  • CVD Chemical Vapor Deposition
  • CVD Chemical Vapor Deposition
  • a memory cell capacitor In order to retain its stored data, a memory cell capacitor must have high capacitance and a low leakage current, which requires the formation of the thinnest possible uniform film.
  • ALD Atomic Layer Deposition
  • a process which repeatedly depositing a thickness of a film material on the order of a molecular layer to form a film having a desired thickness, is referred to as MLD (molecular layer deposition) to be distinguished from ALD in some cases.
  • MLD molecular layer deposition
  • ALD molecular layer deposition
  • a gas supply cycle consisting of the supply of tetrakis(ethylmethylamino)hafnium (hereinafter abbreviated as “TEMAH”), which is an organic metal material, and the supply of ozone (O 3 ) is repeated a plurality of times while maintaining the semiconductor substrate at a predetermined temperature.
  • the reaction vessel is evacuated and purged by inert gas after the supply of one gas and before supply of the other to ensure that the gases react only on the semiconductor substrate.
  • An HfO film having a thickness on the order of an atomic layer is formed on the semiconductor substrate during each cycle.
  • the above gas supply cycle is repeated a predetermined number of times determined depending on desired thickness, so that an HfO film can be formed with excellent film-thickness reproducibility.
  • ALD is advantageous in its excellent film-thickness reproducibility, but is disadvantageous in its long film-forming time.
  • one cycle deposits a film of approximately 0.1 nm.
  • 50 cycles are required to form a film of thickness of 5 nm. If each cycle takes 1 minute, the total film forming time will be approximately 50 minutes. Therefore, the use of a batch-type system is preferable to a single substrate processing system in terms of productivity.
  • FIG. 5 shows the configuration of a conventional batch-type ALD system for forming an HfO film
  • FIG. 6 shows a piping system associated with this system.
  • a vacuum exhaust port 1103 is provided at the top of a reaction tube 1102 defining a reaction chamber 1101 .
  • the vacuum exhaust port 1103 is connected to a vacuum pump 1105 through an evacuation pipe provided with a pressure adjusting valve 1104 .
  • a boat 1108 having a plurality of semiconductor substrates 1107 mounted therein is supported on a boat loader 1106 and loaded in the reaction chamber 1101 .
  • a heater 1109 is provided around the reaction tube 1102 to heat the semiconductor substrates.
  • Liquid TEMAH is supplied from a TEMAH supply source 1110 through a liquid flow rate adjuster 1111 to a vaporizer 1112 , in which the liquid TEMAH is vaporized and a TEMAH gas, as a source gas, is then delivered into the reaction chamber 1101 through a TEMAH nozzle 1113 .
  • Nitrogen gas (N 2 ) is supplied from a nitrogen supply source 1114 to the vaporizer 1112 through a flow rate adjuster 1115 to aid vaporization of the liquid TEMAH.
  • Oxygen gas (O 2 ) is supplied from an oxygen supply source (not shown) through a flow rate adjuster (not shown) to an ozone generator (not shown) in which the oxygen gas is converted into ozone which is an oxidizer.
  • the ozone is then delivered into the reaction chamber 1101 through an ozone nozzle 1113 .
  • nitrogen gas used as a purge gas is supplied from the nitrogen gas supply source 1114 to the reaction chamber 1101 through a flow rate adjuster 1116 and a nitrogen gas nozzle 1113 .
  • TEMAH gas may be supplied into the reaction chamber 1101 to cause a sufficient amount of TEMAH gas to reach the upper portion of the reaction chamber 1101 .
  • ozone has a short life under elevated temperature conditions. Therefore, the supplied ozone progressively disappears as it flows from the lower portion to the upper portion of the reaction chamber 1101 and, as a result, the upper portion of the reaction chamber 1101 is more likely to lack ozone.
  • an excessive amount of ozone may be supplied to the reaction chamber 1101 .
  • the supply of an excessive amount of ozone causes oxidation damage to the components in the lower portion of the reaction chamber 1101 , which is not desirable. Furthermore, ozone is consumed by this oxidation reaction.
  • a distributing nozzle(s) 1117 such as shown in FIG. 7 may be used.
  • the distributing nozzle 1117 extends from the bottom to the top of the reaction chamber 1101 and includes nozzle holes 1118 each corresponding to respective semiconductor substrates mounted in the boat 1118 .
  • This arrangement allows processing gas, especially ozone, to be uniformly supplied to the semiconductor substrates.
  • the TEMAH gas may be supplied through an L-shaped nozzle shown in FIG. 5 or the distributing nozzle shown in FIG. 7 .
  • particle reduction is a critical issue in semiconductor manufacturing.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • peeling-off of the unnecessary films is a major cause of the generation of particles, as is well known to those of ordinary skill in the art. Peeling-off of the unnecessary films tends to occur when the unnecessary films have a large thickness or when the inside of the reaction vessel is exposed to the ambient atmosphere. For example, generation of a large quantity of particles was found after the inside of reaction vessel was exposed to the ambient atmosphere for maintenance or repair after performing deposition of HfO films for many times.
  • cycle purging One of the possible countermeasures against the generated particles is cycle purging.
  • a trial was conducted to reducing particles by using the cycle purging.
  • the purging was performed by repeating a cycle consisting of an ozone flowing step, an evacuating step, and a nitrogen gas flowing step 50 times (spending approximately 3 hours), as shown in FIG. 9 .
  • the horizontal axis is graduated in 15 sec increments.
  • the ozone concentration in the ozone flowing step was 200 g/Nm 3 ; the oxygen flow rate before the oxygen-to-ozone conversion (corresponding to the ozone flow rate) was 10 SLM; the pressure in the reaction vessel in the evacuating step was approximately 5 Pa; and the nitrogen gas flow rate in the nitrogen gas flowing step was 10 SLM.
  • FIGS. 10A and 10B show two examples of the observed particle distribution patterns.
  • FIG. 11 shows change in the number of particles. The number of particles was not stably reduced even after more than 200 purge cycles (spending approximately 12 hours). Under such conditions, a deposition process can not be performed.
  • the present invention has been devised in view of the foregoing circumstances, and it is therefore the object of the present invention to provide an effective, in-situ method of taking countermeasure against particles.
  • the present inventors have found that, also in a coating apparatus that forms a film on semiconductor substrates by repeated atomic or molecular level depositions, a precoating process that coats unnecessary film(s) with another film is useful for reducing particles. It has also been found that such a precoating process can be performed very effectively, if the gas supply mode during precoating is different from the gas supply mode during film formation, in particular, if a gas nozzle for a precoating gas is provided separately from a gas nozzle for film formation. The present invention has been made based on those findings.
  • the present invention provides a semiconductor manufacturing system including a reaction vessel and at least one film-forming nozzle for supplying at least one film-forming gas into the reaction vessel, configured to form a film on a semiconductor substrate disposed within the reaction vessel by supplying the film-forming gas into the reaction vessel to repeat atomic or molecular level deposition, wherein the semiconductor manufacturing system further includes at least one coating nozzle for supplying at least one kind of coating gas into the reaction vessel to coat a component exposed to an atmosphere within the reaction vessel, wherein at least one of said at least one coating nozzle is separated from said at least one film-forming nozzle.
  • the at least one kind of film-forming gas includes a first film-forming gas and a second film-forming gas
  • the at least one coating gas includes a first coating gas and a second coating gas
  • the first film-forming gas is the same as the first coating gas
  • a coating nozzle for supplying the first coating gas is separated from a film-forming nozzle for supplying the first film-forming gas.
  • the second film-forming gas is a metal-containing gas; the second coating gas is a metal-containing gas, and both the first film-forming gas and the first coating gas are ozone.
  • the at least one kind of film-forming gas may include a third film-forming gas, and the third film-forming gas may be the same as the second coating gas.
  • the semiconductor manufacturing system is a batch-type system adapted to contain a plurality of semiconductor substrates in the reaction vessel to perform a film forming process to the semiconductor substrates collectively
  • the reaction vessel has an exhaust port for evacuating an interior of the reaction vessel
  • the film-forming nozzle for supplying the first film-forming gas is a distributing nozzle having a plurality of nozzle holes for discharging the first film-forming gas toward the plurality of semiconductor substrates from their sides
  • the coating nozzle for supplying the first coating gas has a nozzle hole which opens in the reaction vessel at a position farther from the exhaust port than a region in which the plurality of semiconductor devices are disposed.
  • the semiconductor manufacturing system may be a vertical, batch-type system that accommodates a plurality of semiconductor substrates arrayed vertically in horizontal posture in the reaction vessel, and performs a film-forming process to the semiconductor substrates collectively.
  • the first film-forming gas is ozone; the second film-forming gas is TEMAH gas; the third film-forming gas is trimethyl aluminum (hereinafter abbreviated as “TMA”) gas; the first precoating gas is ozone; and the second precoating gas is TMA gas.
  • the semiconductor manufacturing system is a vertical, batch-type system that accommodates a plurality of semiconductor substrates arrayed vertically in horizontal posture in the reaction vessel, and performs a film-forming process to the semiconductor substrates collectively.
  • the film-forming nozzle for supplying the first film-forming gas is a distributing nozzle having a plurality of nozzle holes for discharging the first film-forming gas toward the plurality of semiconductor substrates from their sides; and the coating nozzle for supplying the first coating gas (i.e., ozone) is an L-shaped nozzle having a nozzle hole which opens in the reaction vessel at a position farther from an exhaust port than a region in which the plurality of semiconductor devices are disposed.
  • Ozone is a short-lived gas. Such a gas is supplied through the distributing nozzle during film formation, but is supplied from a position far away from the exhaust port during precoating so that the gas uniformly spreads within the vessel.
  • FIG. 1 is a graph showing the number of generated particles after performing precoating according to the present invention.
  • FIG. 2 is a graph showing the thickness distribution of precoat films.
  • FIG. 3 is a vertical cross-sectional view schematically showing the configuration of an ALD apparatus according to the present invention.
  • FIG. 4 is a schematic diagram showing a gas introducing portion of the ALD apparatus according to the present invention.
  • FIG. 5 is a schematic vertical cross-sectional view showing an example of a conventional ALD apparatus.
  • FIG. 6 is a diagram showing a piping system in the ALD apparatus shown in FIG. 5 .
  • FIG. 7 is a schematic vertical cross-sectional view of another example of the conventional ALD apparatus.
  • FIG. 8 is a side view schematically showing the configuration of a distributing nozzle.
  • FIG. 9 is a time chart illustrating a cycle purge process.
  • FIG. 10 is a diagram showing the distribution of particles on semiconductor substrates in one example.
  • FIG. 11 is a graph showing a relationship between the number of purge cycles and the number of particles.
  • FIG. 12 is a time chart illustrating a precoat process.
  • FIG. 13 is a graph showing a relationship between the number of precoat cycles and the number of particles.
  • FIG. 14 is an enlarged view of a portion of the graph of FIG. 13 .
  • a precoating technique has been used to prevent the generation of particles resulting from peeling-off of unnecessary films in CVD apparatus.
  • the precoating technique coats potentially peelable unnecessary films with a film (e.g., an SiO 2 film) to prevent peeling-off of the unnecessary films.
  • a film e.g., an SiO 2 film
  • the present inventors conducted an experiment in which an HfO film was coated with an aluminum oxide (hereinafter referred to as an “AlO”) film.
  • the AlO film was formed by an ALD process that repeats, a plurality of times, a deposition cycle consisting of a TMA gas flowing step, an evacuating step, a nitrogen gas flowing (purging) step, an ozone flowing step, an evacuating step, and a nitrogen gas flowing (purging) step which were performed in that order, as shown in FIG. 12 .
  • the horizontal axis is graduated in 5 sec increments. This deposition cycle was performed under the following process conditions.
  • the TMA gas flow rate in the TMA gas flowing step was 100 SCCM; the ozone concentration in the ozone flowing step was 200 g/Nm 3 ; the oxygen flow rate before the oxygen-to-ozone conversion (corresponding to the ozone flow rate) was 10 SLM; the pressure in the reaction vessel after each evacuating step was approximately 5 Pa; and the nitrogen gas flow rate in the nitrogen gas flowing step was 10 SLM.
  • Several dummy semiconductor substrates were placed in the boat and heated to 300° C. Under the aforementioned conditions, 0.1 nm of AlO film was deposited in each cycle. Thus, a 10 nm thick AlO film was formed by 100 cycles. 100 cycles spent approximately 2.5 hours.
  • step (2) repeating step (2) and step (3).
  • FIGS. 13 and 14 are graphs illustrating the results of the experiment.
  • FIG. 14 is an enlarged view of a portion of the graph of FIG. 13 (both graphs are based on the same data.)
  • the number of the particles was stably reduced after 400 precoating cycles (the resultant AlO precoat film thickness was 40 nm).
  • the present inventors also attempted to combine the above cycle purging process and the AlO film precoating process, but with no practically useful results. Approximately 400 cycles of AlO film precoating were needed to reduce the number of particles regardless of the number of purge cycles.
  • the inventors endeavored to develop a technique of effectively forming an aluminum oxide precoating to sufficiently prevent peeling-off of the film.
  • the inventors have come to a hypothesis that the use of the distributing nozzle, which is used to effectively supply ozone during desired film formation, rather avoids formation of a high-quality precoating.
  • the ALD apparatus shown in FIG. 3 is a film-forming system (semiconductor manufacturing system) in one embodiment of the present invention, as can be seen from the following description.
  • the ALD apparatus shown in FIG. 3 will now be described.
  • the ALD apparatus shown in FIG. 3 differs from those described in the “Background Art” section with reference to FIGS. 5 and 7 in that it has a different gas supply system. Duplicative description of the same components is thus omitted.
  • the ALD apparatus shown in FIG. 3 includes a distributing nozzle 107 and L-shaped nozzles 108 .
  • the distributing nozzle 107 extends vertically within the reaction chamber 1101 in the longitudinal direction of the boat 1108 , that is, in the direction of arrangement of the semiconductor substrates.
  • the distributing nozzle 107 is configured to jet a gas, through nozzle holes thereof each arranged at positions corresponding to respective semiconductor substrates, toward respective semiconductor substrates from their sides.
  • Each L-shaped nozzle 108 is provided at the lowest peripheral portion of the reaction chamber 1101 and configured to supply a gas through a single nozzle hole thereof from the bottom toward the top of the boat 1108 . Note that, in the ALD apparatus shown in FIG. 3 , all components exposed to the atmosphere within the reaction chamber 1101 are either formed of quartz or covered with quartz.
  • the gas supply system for the ALD system shown in FIG. 3 is adapted to form an HfO film and an AlO film on the semiconductor substrates, as well as to form an AlO film as a precoat film on the inner wall of the reaction tube and on the inner components of the reaction vessel that are exposed to the atmosphere within the reaction vessel.
  • FIG. 4 is a schematic horizontal cross-sectional view of the manifold, or gas introducing portion, mounted in the lowermost portion of the reaction tube (or reaction vessel) 1102 of the ALD apparatus shown in FIG. 3 .
  • Gas lines for introducing various gases into the reaction chamber 1101 penetrate through the manifold.
  • the distributing nozzle 107 (see FIG. 8 ) or the L-shaped nozzle 108 (not shown in FIG. 4 ) is coupled to the tip of each gas line to discharge a gas into the reaction chamber 1101 .
  • the ALD apparatus shown in FIGS. 3 and 4 includes a nozzle for forming an AlO film on the semiconductor substrates, as described above.
  • the ALD apparatus may further include a nitrogen gas supply nozzle for purging (preferably having an L-shape) (see FIG. 4 ).
  • the nitrogen gas used as a purge gas is more preferably supplied through nozzles for supplying TEMAH gas and TMA gas.
  • a plurality of nozzles each having the same task.
  • a plurality of nozzles may be disposed locally and collectively, as shown in FIG. 4 , or they may be distributed along the circumference of the reaction tube 1102 .
  • the nozzle holes of the L-shaped nozzles 108 are arranged at positions ensuring that the gases discharged from the nozzles is sufficiently supplied to the surfaces of the components in the lower portion of the reaction chamber 1101 , such as a plate-like member which is a part of the boat loader 1106 (i.e., the cover for closing the lower end opening (furnace throat) of the reaction tube 1102 ) and a insulating tube.
  • the nozzle holes of the L-shaped nozzles 108 for supplying precoating gases are arranged in the reaction chamber 1101 at positions farthest from the vacuum exhaust port 1103 .
  • the nozzle holes of the L-shaped nozzles 108 are located approximately 100 mm above the bottom surface of the reaction chamber 1101 , i.e., the top surface of the cover described above.
  • a conventional, batch HfO film coating process (by ALD) was performed a predetermined number of times by using the ALD apparatus shown in FIG. 3 .
  • the inside of the reaction vessel was then exposed to the ambient atmosphere.
  • the TEMAH gas was supplied through the L-shaped nozzle 168 and the ozone was supplied through the distributing nozzle 107 .
  • AlO precoating process was performed by ALD.
  • the AlO precoating process was performed by repeating, a plurality of times, an ALD deposition cycle consisting of a TMA gas flowing step, an evacuating step, a nitrogen gas flowing (purging) step, an ozone flowing step, an evacuating step, and a nitrogen gas flowing (purging) which are performed in that order, as shown in FIG. 12 .
  • the horizontal axis is graduated in 5 sec increments.
  • the TMA gas flow rate in the TMA gas flowing step was 100 SCCM; the ozone concentration in the ozone flowing step was 200 g/Nm 3 ; the oxygen flow rate before the oxygen-to-ozone conversion (corresponding to the ozone flow rate) was 10 SLM; the pressure in the reaction vessel in the evacuating steps was approximately 5 Pa; and the nitrogen gas flow rate in the nitrogen gas flowing step was 10 SLM.
  • Several dummy semiconductor substrates were placed in the boat and heated to 300° C. Both the TMA gas and ozone were supplied through the L-shaped nozzles.
  • a conventional, batch HfO film forming process (by ALD) was performed once, and then the semiconductor substrates were checked for particles.
  • the HfO film forming conditions may be understood just by substituting “TEMAH” for “TMA” in FIG. 12 .
  • the TEMAH gas flow rate in the TEMAH gas flowing step was 1 ml/min (liquid basis).
  • the flow rates of the other gases and the temperature and pressure conditions were the same as those for forming the AlO film described above.
  • the TEMAH gas was supplied through an L-shaped nozzle 108 and the ozone was supplied through the distributing nozzle 107 .
  • the number of particles (larger than 0.12 microns in size) generated after the subsequent HfO film formation was 20, sufficiently small. It took approximately 2.5 hours to complete the 100-cycle precoating. It was thus found that the time required for precoating was reduced to quarter as compared with the case where a distributing nozzle was used as an ozone supply nozzle in which the time required for precoating was approximately 10 hours, as previously described with reference to the previous experiment result.
  • Silicon pieces were placed at positions 101 to 106 within the reaction chamber 1101 before the above step (2) (see FIG. 3 ).
  • the position 101 is located on the inner surface of the cover of the boat loader 1006 (lower than the nozzle holes of the L-shaped gas supply nozzles 108 ); the positions 102 and 103 are on heat shielding plates of the heat Insulating tube of the boat loader 1006 ; the position 104 is on the bottom of the boat 1108 ; the position 105 is on the dummy semiconductor substrate placed in the lower portion of the boat 1108 ; and the position 106 is on the dummy semiconductor substrate placed in the central portion of the boat 1108 .
  • the thickness of the AlO precoat film formed on each silicon pieces was measured after the above step (2).
  • a comparative experiment was performed in which: a distributing nozzle for forming the HfO film was used instead of an L-shaped gas supply nozzle to supply ozone when forming the AlO precoat film (the other conditions are the same as in the above experiment); and the thickness of the AlO precoat film formed on the silicon pieces at each of the positions 101 to 106 was also measured.
  • FIG. 2 is a graph illustrating the results of these experiments.
  • symbol A denotes the thickness of the precoat film formed when the ozone was supplied through an L-shaped gas supply nozzle; and symbol B denotes the thickness of the precoat film formed when the ozone was supplied through the distributing gas supply nozzle.
  • symbol B denotes the thickness of the precoat film formed when the ozone was supplied through the distributing gas supply nozzle.
  • the AlO precoat film formed by using the L-shaped gas supply nozzle was approximately 15% thicker than that formed by using the distributing gas supply nozzle.
  • the prevent invention is not limited to the foregoing embodiments. It will be appreciated by those skilled in the art that the broadest scope of the present invention is that, if the position of a nozzle for forming a film on the semiconductor substrates (i.e., a film-forming gas nozzles) are not suitable for forming a precoat film, a nozzle for supplying a process gas to form a precoat film (a precoating gas nozzle) may be provided separately from the film-forming gas nozzle, allowing the process gas for precoating to be supplied to an appropriate location within the reaction vessel.
  • a nozzle for forming a film on the semiconductor substrates i.e., a film-forming gas nozzles
  • a nozzle for supplying a process gas to form a precoat film may be provided separately from the film-forming gas nozzle, allowing the process gas for precoating to be supplied to an appropriate location within the reaction vessel.
  • the present invention is applicable. Further, the present invention has been described while focusing on the nozzle for supplying ozone gas when forming a film on the semiconductor substrates and to the nozzle for supplying ozone gas for precoating. Since ozone has a short life, it is true that the advantageous effect of the present invention is best achieved by providing different nozzles for supplying ozone when forming a film on the semiconductor substrates and for supplying ozone when forming a precoat film to allow ozone to be supplied from optimum positions.
  • the TMA gas may be supplied through a distributing nozzle.
  • an AlO precoat film of better quality (although the difference may not be so large as compared with a case of ozone) can be formed by using an L-shaped gas supply nozzle as a nozzle for supplying the TMA gas during precoating.
  • the advantageous effects of the present invention may be expected not only in a case where the film to be formed on the semiconductor substrates is an HfO film and the precoat film is an AlO film, but also in a case those films are of different types (although the advantageous effect may not be the same degree).
  • the present invention achieves most remarkable advantageous effects if it is applied to a vertical batch system, the advantageous effects can be achieved even if the present invention is applied to another type of batch system or a single substrate processing system.

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Cited By (10)

* Cited by examiner, † Cited by third party
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US20100229795A1 (en) * 2009-03-10 2010-09-16 Hitach-Kokusai Electric Inc. Substrate processing apparatus
US20110143053A1 (en) * 2008-09-24 2011-06-16 Toshiba Mitsubishi-Electric Indus. Sys.Corp Method of forming zinc oxide film (zno) or magnesium zinc oxide film (znmgo) and apparatus for forming zinc oxide film or magnesium zinc oxide film
US20160208382A1 (en) * 2015-01-21 2016-07-21 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus
US20170314128A1 (en) * 2013-11-25 2017-11-02 Lam Research Corporation Chamber undercoat preparation method for low temperature ald films
JP2018178236A (ja) * 2017-04-21 2018-11-15 東京エレクトロン株式会社 基板処理装置、処理ガスノズル内のパーティクルコーティング方法及び基板処理方法
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US11299804B2 (en) 2018-09-26 2022-04-12 Kokusai Electric Corporation Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
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US11920239B2 (en) 2015-03-26 2024-03-05 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5006821B2 (ja) * 2008-03-14 2012-08-22 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
KR20110007434A (ko) * 2009-07-16 2011-01-24 주식회사 아이피에스 반도체 제조 장치
JP5610438B2 (ja) * 2010-01-29 2014-10-22 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5977274B2 (ja) * 2013-03-21 2016-08-24 東京エレクトロン株式会社 バッチ式縦型基板処理装置および基板保持具
KR102229761B1 (ko) 2014-03-17 2021-03-23 삼성디스플레이 주식회사 원자층 증착 장치
JP6035279B2 (ja) * 2014-05-08 2016-11-30 東京エレクトロン株式会社 膜厚測定装置、膜厚測定方法、プログラム及びコンピュータ記憶媒体
RU2695997C2 (ru) * 2014-06-12 2019-07-30 БАСФ Коатингс ГмбХ Способ получения гибких органо-неорганических слоистых материалов
US20190263125A1 (en) * 2017-01-31 2019-08-29 Hewlett-Packard Development Company, L.P. Atomic layer deposition oxide layers in fluid ejection devices
KR102227909B1 (ko) * 2019-07-16 2021-03-16 주식회사 유진테크 배치식 기판처리장치 및 그 운용방법
TWI838931B (zh) * 2022-10-28 2024-04-11 日商斯庫林集團股份有限公司 基板處理裝置
CN120322852A (zh) * 2022-12-27 2025-07-15 株式会社国际电气 基板处理方法、半导体装置的制造方法、程序及基板处理装置
CN117418215A (zh) * 2023-10-23 2024-01-19 江苏微导纳米科技股份有限公司 一种原子层沉积工艺的镀膜方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3359474B2 (ja) 1995-09-28 2002-12-24 京セラ株式会社 横型熱処理装置
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
KR100498609B1 (ko) * 2002-05-18 2005-07-01 주식회사 하이닉스반도체 배치형 원자층 증착 장치
KR100520900B1 (ko) * 2003-03-13 2005-10-12 주식회사 아이피에스 Ａｌｄ 박막증착방법
JP2005085794A (ja) * 2003-09-04 2005-03-31 Seiko Epson Corp 薄膜生成方法及び半導体装置の製造方法
JP4770145B2 (ja) * 2003-10-07 2011-09-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US7285312B2 (en) * 2004-01-16 2007-10-23 Honeywell International, Inc. Atomic layer deposition for turbine components
US20050196535A1 (en) * 2004-03-02 2005-09-08 Weigel Scott J. Solvents and methods using same for removing silicon-containing residues from a substrate
US7604841B2 (en) * 2004-03-31 2009-10-20 Tokyo Electron Limited Method for extending time between chamber cleaning processes
US20050287806A1 (en) * 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
US7740704B2 (en) * 2004-06-25 2010-06-22 Tokyo Electron Limited High rate atomic layer deposition apparatus and method of using
JP2006066557A (ja) * 2004-08-25 2006-03-09 Hitachi Kokusai Electric Inc 基板処理装置
JP2007067119A (ja) * 2005-08-30 2007-03-15 Elpida Memory Inc 半導体製造装置
US7588667B2 (en) * 2006-04-07 2009-09-15 Tokyo Electron Limited Depositing rhuthenium films using ionized physical vapor deposition (IPVD)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110143053A1 (en) * 2008-09-24 2011-06-16 Toshiba Mitsubishi-Electric Indus. Sys.Corp Method of forming zinc oxide film (zno) or magnesium zinc oxide film (znmgo) and apparatus for forming zinc oxide film or magnesium zinc oxide film
US9598768B2 (en) * 2008-09-24 2017-03-21 Toshiba Mitsubishi-Electric Industrial Systems Corporation Method of forming zinc oxide film (ZnO) or magnesium zinc oxide film (ZnMgO) and apparatus for forming zinc oxide film or magnesium zinc oxide film
US20100229795A1 (en) * 2009-03-10 2010-09-16 Hitach-Kokusai Electric Inc. Substrate processing apparatus
US20170314128A1 (en) * 2013-11-25 2017-11-02 Lam Research Corporation Chamber undercoat preparation method for low temperature ald films
US20160208382A1 (en) * 2015-01-21 2016-07-21 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus
US11920239B2 (en) 2015-03-26 2024-03-05 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
JP2018178236A (ja) * 2017-04-21 2018-11-15 東京エレクトロン株式会社 基板処理装置、処理ガスノズル内のパーティクルコーティング方法及び基板処理方法
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US12371781B2 (en) 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing

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CN101078110A (zh) 2007-11-28
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