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US20080041727A1 - Method and system for depositing alloy composition - Google Patents

Method and system for depositing alloy composition Download PDF

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Publication number
US20080041727A1
US20080041727A1 US11/507,066 US50706606A US2008041727A1 US 20080041727 A1 US20080041727 A1 US 20080041727A1 US 50706606 A US50706606 A US 50706606A US 2008041727 A1 US2008041727 A1 US 2008041727A1
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United States
Prior art keywords
current density
feature
metal alloy
weight ratio
metal
Prior art date
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Abandoned
Application number
US11/507,066
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English (en)
Inventor
Bioh Kim
Marvin Bernt
Greg Wilson
Paul R. McHugh
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Semitool Inc
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Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Priority to US11/507,066 priority Critical patent/US20080041727A1/en
Assigned to SEMITOOL, INC. reassignment SEMITOOL, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BERNT, MARVIN, MCHUGH, PAUL R., WILSON, GREG, KIM, BIOH
Priority to US11/840,748 priority patent/US9359683B2/en
Priority to PCT/US2007/076215 priority patent/WO2008022316A2/en
Priority to TW096130449A priority patent/TWI431169B/zh
Publication of US20080041727A1 publication Critical patent/US20080041727A1/en
Priority to US15/174,735 priority patent/US20160355941A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H10P14/47—
    • H10W72/012—
    • H10W72/019—
    • H10W72/923—
    • H10W72/9415—
    • H10W72/952—

Definitions

  • the subject matter described herein relates to methods and systems for forming metal alloy features on microfeature workpieces and controlling composition gradients within the deposited metal alloy features.
  • Metal alloys are utilized in numerous applications in the microelectronic industry. For instance, Permalloy and other magnetic alloys (which are based on nickel, cobalt and iron) are used in giant magnoresistive heads and magnoresistive heads. Metal alloys are also used as conductive features for interconnects and vias. Noble metal alloys are used as electrodes for capacitors. Other metal alloys, such as lead-tin alloys and lead-free alloys are used as solders for mounting microelectronic devices to substrates.
  • the weight ratio of the metals deposited as an alloy tend to be similar to the ratio of concentrations of the metal ions in the electroplating solution. This characteristic lends itself to predictability and control the deposited alloy composition within the deposited feature. In contrast, when the alloying metals do not have similar reduction potentials, prediction and control of the alloy composition within the deposited feature becomes more challenging.
  • Lead-free solders and Permalloy are formed from alloying metals that have substantially different reduction potentials.
  • the baths used to electroplate lead-free solders and Permalloy include the alloying metals in much different compositions.
  • the silver concentration in the electroplating bath is much less than the concentration of the tin concentration.
  • the non-nickel metal ion concentration is generally much less than the concentration of nickel ions.
  • Near-eutectic tin alloy based solders are desirable due to properties such as good melting, solderability, ability to cope with lead contamination and reliability.
  • the silver and copper contents are limited to near eutectic compositions on account of melting point limitations for bumping applications. If the weight ratio of metals at different locations within the formed feature varies too far from the ratio needed to provide an alloy with the desired melting properties, incomplete reflow may result at those locations and some of the solder alloy may not melt at the reflow temperature. Simply elevating the reflow temperature is often not an solution because higher temperatures may damage surrounding architecture. Incomplete reflow is undesirable because it can adversely effect conductivity properties of the alloy and integrity of intermetallic interfaces.
  • portions of the alloy feature differ in composition from other portions of the alloy feature.
  • a portion of the alloy feature may have one composition at the interface with one material and a different composition at the interface with another material.
  • the processes and systems described herein provide techniques and tools that can be used to minimize variations in composition within a formed metal alloy feature.
  • Minimizing variations in composition within formed metal alloy features will reduce the likelihood that alloy features will not function in the manner they were designed to function.
  • minimizing compositional variations in solder alloys can reduce the likelihood that incomplete reflow will occur at desired reflow temperatures or that surrounding architecture will be damaged by increasing the reflow temperature to achieve complete solder reflow.
  • minimizing compositional variations in the alloy can reduce the likelihood that the magnetic head will not perform as desired.
  • One method described below in more detail for forming a metal alloy feature includes a step of providing a microfeature workpiece that includes a metal feature within a recess.
  • the microfeature workpiece is contacted with an electroplating bath that is also in contact with an electrode. Applying an electric potential between the metal feature and the electrode produces a first current density that promotes deposition of a metal alloy having a first weight ratio of alloying metals within the recessed feature.
  • the electric potential is then adjusted to change the first current density to a second current density which results in deposition of a metal alloy having a second weight ratio of alloying metals within the recessed feature.
  • the electric potential is then changed a third time to provide a third current density that results in deposition of a metal alloy having a third weight ratio of alloying metals within the recessed feature.
  • the first, second, and third current densities are different and in other embodiments, the first, second, and third current densities are similar.
  • the resulting first weight ratio of alloying metals, second weight ratio of alloying metals, and third weight ratio of alloying metals in the deposited metal alloy can be substantially the same or can be substantially different.
  • a method for producing metal alloy features wherein variation of the weight ratio of alloying metals throughout the deposited metal alloy feature is minimized includes the step of providing a microfeature workpiece that includes a metal feature within a recess. The microfeature workpiece is contacted with an electroplating bath that is also in contact with an electrode. An electric potential is applied between the metal feature and the electrode which produces a first current density and causes deposition of a metal alloy having a first weight ratio of alloying metals onto the metal feature. In accordance with this method, the first current density is then adjusted to a second current density as the recessed feature is filled with metal alloy and deposition of metal alloy having a weight ratio of alloying metals that is substantially similar to the first weight ratio is continued.
  • Methods described herein can be carried out in a tool for forming a metal alloy feature that includes a reactor for receiving a microfeature workpiece that includes a metal feature within a recess.
  • the reactor contains an electroplating bath that is in contact with an electrode.
  • the reactor contacts the microfeature workpiece with the electroplating bath.
  • the tool further includes a power source for applying a first electric potential, a second electric potential, and a third electric potential between the metal feature and the electrode.
  • the first electric potential produces a first current density, which causes a metal alloy having a first weight ratio of alloying metals to be deposited within the recessed feature.
  • the second electric potential produces a second current density, which causes a metal alloy having a second weight ratio of alloying metals to be deposited within the recessed feature.
  • the third electric potential produces a third current density that causes a metal alloy having a third weight ratio of alloying metals to be deposited within the recessed feature.
  • the methods and systems described herein include steps and components to control the composition, e.g., weight ratio of alloying metals in a deposited metal alloy feature.
  • the control provided by the methods and systems described herein will allow microelectronic device manufacturers to produce metal alloy features wherein variation of the metal alloy composition within the metal alloy feature is minimized or wherein variation of the metal alloy composition within the formed metal alloy feature is controlled to vary in a desired manner.
  • FIG. 1 is a schematic illustration of a tool for carrying out processes for forming metal alloy features described herein;
  • FIG. 2 is a schematic illustration of a reactor for carrying out methods described herein and for use in the tool described with reference to FIG. 1 ;
  • FIGS. 3A-3E schematically illustrate a sequence of steps corresponding to a method for depositing metal alloys described herein;
  • FIG. 4 is a graphical representation of a predicted relationship between the silver content of a tin-silver alloy and the deposition rate as a recessed feature is filled;
  • FIG. 5 graphically illustrates the silver content of a tin-silver alloy that is deposited within a recessed feature using a method described herein that employs four different plating rates ⁇ circle around (A) ⁇ - ⁇ circle around (D) ⁇ ;
  • FIG. 6 graphically illustrates a predicted change in silver content as a recessed feature is filled at a constant deposition rate of 5 ⁇ m/min.
  • FIG. 7 graphically illustrates how the predicted silver content of a tin-silver alloy varies with the depth of the recessed feature when the deposition is carried out at a constant deposition rate of 5 ⁇ m/min. depicted in FIG. 5 .
  • microfeature workpiece or “workpiece” refer to substrates on and/or in which micro devices are formed.
  • substrates include semiconductive substrates (e.g., silicon wafers and gallium arsenide wafers), nonconductive substrates (e.g., ceramic or glass substrates), and conductive substrates (e.g., doped wafers).
  • micro devices include microelectronic circuits or components, micromechanical devices, microelectromechanical devices, micro optics, thin film recording heads, data storage elements, microfluidic devices, and other small scale devices.
  • the term “substrate” refers to a base layer of material over which one or more metallization levels is disposed.
  • the substrate may be, for example, a semiconductor, a ceramic, a dielectric, etc.
  • metal alloy features in accordance with processes described herein can be carried out in a tool designed to electrochemically deposit metals such as one available from Semitool, Inc., of Kalispell, Mont., under the trademark RaiderTM.
  • an integrated tool can be provided to carry out a number of process steps involved in the formation of microfeatures on microfeature workpieces. Below is described one possible combination of processing stations that could be embodied in a processing tool platform sold under the trademark RaiderTM by Semitool, Inc. of Kalispell, Mont. It should be understood that other processing tool platforms could be configured in similar or different manners to carry out metallization steps such as those described below.
  • an exemplary integrated processing tool 120 includes stations to carry out a pre-wet step 122 , optional copper deposition step 124 , under bump metallization step 126 , rinse step 128 , alloy deposition step 130 , and a spin-rinse-dry step 132 .
  • the chambers for carrying out such steps can be arranged in various configurations. Microelectronic workpieces are transferred between the chambers through the use of robotics (not shown).
  • the robotics for the tool 120 are designed to move along a linear track. Alternatively, the robotics can be centrally mounted and designed to rotate to access the input section 136 and the output section 138 of tool 120 .
  • Suitable chambers for use in tool 120 include those available for the modular configuration of an Equinox® brand processing tool from Semitool, Inc.
  • one chamber useful for the alloy deposition step 130 is the RaptorTM reactor available from Semitool, Inc.
  • Processing tool 120 is capable of being programmed to implement user entered processing recipes and conditions.
  • the pre-wet chamber 122 , rinse chamber 128 and spin-rinse-dry chamber 132 can be of the type available from numerous manufacturers for carrying out such process steps. Examples of such chambers include spray processing modules and immersion processing modules available in conjunction with the RaiderTM system described above.
  • the optional copper deposition chamber 122 , under bump metallization chamber 126 and metal alloy deposition chamber 130 can be provided by numerous electroplating and electroless deposition chambers such as those available as immersion processing modules and electroplating processing reactors for the RaiderTM model ECD tool. Specific examples of an electroplating processing reactor include the types described in U.S. Provisional Application No. 60/739,343 and International Application Nos.
  • a chamber for electroplating metal alloys includes a reactor, a bath supply, an electrode, e.g., an anode, a power supply, and a controller.
  • the reactor receives the surface of the workpiece and exposes the surface to an electroplating bath.
  • the bath supply includes a source of metal ion(s) to be deposited on the surface of the workpiece.
  • the electrode is in electrical contact with the electroplating bath.
  • the power supply supplies electroplating power between the surface of the workpiece and the electrode which promotes the electroplating of electroplate metal ions onto the surface.
  • the controller controls the supply of electroplating power so that the metal ions are deposited on the workpiece surface.
  • FIG. 2 illustrates a simplified form of a reactor 60 .
  • Reactor 60 includes a processing head 62 and an electroplating bowl assembly 64 .
  • the electroplating bowl assembly includes a cup assembly 70 that is disposed within a reservoir container 72 .
  • the cup assembly 70 includes a fluid reactor 72 portion that holds the electroplating bath fluid.
  • the cup assembly also includes a depending annular skirt 74 which extends below the cup bottom 76 , and which includes apertures opening therethrough for fluid communication of the plating bath solution, and for release of any gases that might collect as the reactor of the reservoir assembly is filled with plating solution.
  • the cup is preferably made from a material that is inert to plating solutions, such as polypropylene.
  • a lower opening in the bottom wall of the cup assembly 70 is connected to a polypropylene (or other material) riser tube 78 , which preferably is adjusted in height relative to the cup assembly by a threaded connection.
  • a first end of the riser tube 78 is secured to the rear portion of an anode shield 80 , which supports an anode 82 .
  • a fluid inlet line 84 is disposed within the riser tube 78 .
  • Both the riser tube 78 and the fluid inlet line 84 are secured to the processing bowl assembly 64 by a fitting 86 .
  • the fitting 86 can accommodate height adjustment of both the riser tube 78 and the inlet line 84 . As such, this connection provides for vertical adjustment of the anode 82 .
  • the inlet line 84 is preferably made from a conductive material, such as titanium, and is used to conduct electrical current to the anode 82 from the power supply, as well as to supply fluid to the cup assembly 70 .
  • the metal or metals to be plated onto the workpiece in accordance with the methods described herein are present in a plating solution as species of metal ions to be deposited onto the workpiece.
  • Electroplating solution is provided to the cup assembly 70 through the fluid inlet line 84 and proceeds therefrom through a plurality of fluid inlet openings 88 .
  • the plating solution then fills the reactor 72 through openings 88 , as supplied by a plating fluid pump (not shown) or other suitable supply.
  • the metal ions are deposited under process conditions that preferentially deposit metal ions into recessed features as opposed to the surrounding field surfaces.
  • the upper edge of the cup sidewall 90 forms a weir, which limits the level of electroplating solution within the cup. This level is chosen so that only the bottom surface of a wafer W (or other workpiece) is contacted by the electroplating solution. Excess solution pours over this top edge into an overflow reactor 92 .
  • the outflow liquid from the reactor 72 is preferably returned to a suitable reservoir where it can be treated with additional plating chemicals to adjust the levels of the constituents and then recycled through the plating reactor 72 .
  • the anode 82 can be an inert anode used in connection with the plating of metals onto the workpiece.
  • the specific anode may alternatively be a consumable anode, with the anode used in reactor 60 varying depending upon the specifics of the plating liquid and process being used.
  • the reactor illustrated in FIG. 2 also employs a diffuser element 93 that is disposed above the anode 82 , providing an even distribution of the flow of fluid across the surface of wafer W. Fluid passages are provided over all or a portion of the diffuser plate 93 , to allow fluid communication therethrough.
  • the height of the diffuser element within the cup assembly may be adjustable by using a height adjustment mechanism 94 .
  • the anode shield 80 is secured to the underside of the anode 82 using anode shield fasteners 96 , to prevent direct impingement by the plating solution as the solution passes into the processing reactor 72 .
  • the anode shield 80 and anode shield fasteners 96 are preferably made from a dielectric material, such as polyvinylidene fluoride or polypropylene.
  • the anode shield serves to electrically isolate and physically protect the backside of the anode.
  • the processing head 62 holds a wafer W (or other workpiece) within the upper region of the processing reactor 72 .
  • FIG. 2 illustrates in a simplified form that the head 62 is constructed to rotate the wafer W within the reactor 72 about an axis R.
  • the processing head 62 includes a rotor assembly 98 having a plurality of wafer W engaging contacts 200 that hold the wafer W against features of the rotor.
  • the rotor assembly 98 preferably includes a ring contact as described in International Application No. WO 00/40779, which is incorporated herein by reference.
  • the contacts 200 for a ring contact assembly are preferably adapted to conduct current between the wafer W and an electrical power supply.
  • the processing head 62 is supported by a head operator (not shown) that is adjustable to adjust the height of the processing head.
  • the head operator also has a head connection shaft 202 that is operable to pivot about a horizontal pivot axis. Pivotal action of the processing head using the operator allows the processing head to be placed in an open or face-up position (not shown) for loading and unloading of the wafer W.
  • FIG. 2 illustrates the processing head pivoted into a face-down position in preparation for processing.
  • Chambers useful for the optional copper deposition, under bump metallization and metal alloy deposition may also include components to improve the mass transfer of metal ions into recessed features.
  • Components for improving mass transfer of metal ions into recesses by reducing diffusion layer thicknesses include providing fluid jets to increase fluid flow velocities of the processing fluid at the surface of the workpiece to be treated, reciprocating elements to provide agitation and increase fluid flow, and components designed to form vortices adjacent the surface of the microfeature workpiece being treated.
  • substrate 204 e.g., a silicon wafer carries a dielectric layer 206 that has been patterned to provide recesses 208 within the dielectric material.
  • Dielectric 206 can be patterned using conventional techniques such as photolithography.
  • a metal feature 210 such as a seed layer, under bump metallization, or barrier layer 210 is formed within recess 208 .
  • Metal feature 210 can be formed using conventional techniques such as electrolytic, electroless, PVD, or CVD techniques.
  • metal alloy features having a ratio of alloying metals within the feature that is relatively constant (or of minimal variance), e.g., from the bottom to the top of the feature are provided by adjusting the current density and, accordingly, the deposition rate, as the recessed feature is filled.
  • the manner in which the current density is adjusted and the timing of the adjustment in the current density will depend at least in part upon the specific chemistry employed as well as the cross section and depth dimensions of the recessed feature to be filled. In certain situations, it may be desirable to increase the deposition rate by increasing the current density as the recessed feature is filled. In other situations, it may be preferred to decrease the deposition rate by decreasing the current density as the recessed feature is filled.
  • a metal alloy feature is formed over metal feature 210 within recess 208 .
  • Processes described herein include steps that result in the formation of metal alloy features wherein the variation of the ratio of alloying metals within the formed metal alloy features is minimal.
  • processes described herein produce metal alloy features wherein the weight ratio of alloying metals in the formed metal alloy features is relatively constant within the formed alloy feature, e.g., there is minimal variance in the weight ratio of alloying metals from the bottom to the top of the formed metal alloy feature. Acceptable variances in the weight ratio of alloying metals in the deposited feature will depend in part upon the composition of the alloy and the end use.
  • the ratio of alloying metals in a formed metal alloy feature is considered to be substantially constant when the variation in the ratio of alloying metals at locations within the formed metal alloy feature differs by less than about ⁇ 1 weight % from a target alloy composition for tin solder applications and less than about ⁇ 5 weight % from a target alloy composition for Permalloy and other magnetic alloy applications.
  • the ratio of alloying metals in formed metal alloy features is considered not to be substantially constant when the variation in the weight ratio of alloying metals at locations within the formed metal alloy feature falls outside these ranges for tin alloy solders, Permalloy and other magnetic alloy systems.
  • substrate 204 is contacted with an electroplating bath that is also in contact with an electrode.
  • electroplating baths available from numerous commercial sources can be employed.
  • the electric potential that is applied between the metal feature and the electrode is specifically adjusted during the course of the electroplating process as the recessed feature is filled and the feature formed. Increasing the electric potential increases the current density within the reaction chamber, which increases the deposition rate. Decreasing the electric potential decreases the current density within the reaction chamber, which decreases the deposition rate.
  • silver has a higher reduction potential with significantly less amount of silver concentration than tin concentration in the plating solution.
  • the present inventors predict that as the depth of a recessed feature decreases as a result of being filled by tin-silver alloy, mass transfer limitations on silver diminish and, accordingly, a greater amount of silver relative to the amount of tin is deposited into the recessed feature.
  • the current density can be increased, which results in an increase in the deposition rate of tin.
  • the increase in current density is controlled such that the increased rate of tin deposition is proportional to the increased rate of silver deposition as the recessed feature is filled.
  • the foregoing presumes that the current density is above the limiting current density of silver and, thus, an increase in current density has little impact on the deposition rate of silver.
  • Controlling current density as described above provides a means for reducing and minimizing variances in the weight ratio of tin and-silver within the deposited metal alloy. In some applications, it may be possible to reduce the variances to a point where the weight ratio of tin to silver is substantially the same throughout the entire deposited feature.
  • an exemplary sequence for increasing deposition rates ⁇ circle around (A) ⁇ - ⁇ circle around (D) ⁇ as a recessed feature is filled is illustrated.
  • the illustrated deposition rate increases can be achieved by adjusting the current density within a reaction chamber.
  • the recessed feature being filled is a solder bump having a stud that is 108 microns in diameter with a total solder bump height of 120 microns.
  • the sequence of deposition rate increases includes four step-ups that are instituted at different times as the recessed feature is filled. Table 1 below lists the thickness of the deposited metal alloy for the different deposition rates.
  • the silver metal content of the deposited alloy feature just prior to the deposition rate increase was determined using x-ray fluorescence spectroscopy (XRF). These values are depicted in FIG. 5 as diamonds. XRF provides a meaningful measurement of the silver content of the metal alloy that is being deposited at the particular depth within the recessed feature indicated in FIG. 5 . The measured values for silver content range between 2-3 weight %.
  • a layer of metal alloy 212 characterized by a first ratio of alloying metals is deposited over metal feature 210 . Thereafter, the current density is increased to provide an increased deposition rate during interval ⁇ circle around (B) ⁇ that results in the deposition of metal alloy layer 214 characterized by a second ratio of alloying metals. Thereafter, during interval ⁇ circle around (C) ⁇ a third layer 216 of metal alloy having a third ratio of alloying metals present is deposited. Thereafter, during interval ⁇ circle around (D) ⁇ , the balance of the stud portion and a mushroom portion 218 of the solder bump is deposited. Portion 218 is characterized by a fourth weight ratio of alloying metals.
  • the mushroom portion of the solder bump may continue to grow as indicated by the broken lines 220 and 222 .
  • the mass transfer limits imposed by the requirements of depositing metal alloys into recessed features are less predominant; however, the concepts discussed herein for reducing the variance in composition of the deposited metal alloy features may also be applied to control the alloy composition of the mushroom portion of the solder bump.
  • formation of the mushroom portion of the solder bump could be carried out at as high a current density as possible in order to minimize the effect of the limiting current density of the more noble metal(s) used to form the metal alloy.
  • Use of pulse conditions with an optimized duty cycle that provides an instantaneous current density that is elevated, may reduce the effect of the more noble metal limiting current density on the film composition.
  • the resulting solder bump includes four locations wherein the silver content of the solder bump ranges from 2% to 3%.
  • the dotted line illustrates predicted silver content based on a constant deposition rate of 5 microns per minute. From FIG. 6 , it can be seen that as the recessed feature fills, the percent silver content of the deposited tin-silver alloy increases. This increase is graphically illustrated more clearly in FIG. 7 . FIG. 6 and FIG. 7 illustrate that if the deposition rate is held constant at 5 microns per minute, the predicted silver content for the deposited metal feature increases from about 2.7% near the bottom of the recessed feature to about 7.3% near the top of the solder bump.
  • the method described above with respect to FIGS. 3A-3E and FIG. 5 describes a four-step increase in the current density/deposition rate.
  • An alternative to a step-wise increase in the current density/deposition rate would be a more continuous increase in the current density/deposition rate.
  • a curvilinear profile for the deposition rate increase could be employed. Using such a curvilinear continuous increase in the current density/deposition rate may minimize variations in the weight ratio of alloying metals within individual layers, e.g., within layer 212 .
  • a metal alloy feature it may be more desirable to deposit a metal alloy feature under conditions that are controlled to produce a desired variation in alloying metal weight ratio in the deposited feature as opposed to minimizing variation in alloying metal weight percent in the deposited feature.
  • the composition near the top of the deposited metal alloy feature varies significantly from the composition of the metal alloy near the bottom of the deposited feature.
  • Such a feature can be produced using the method described below.
  • a method for forming metal alloy features in recessed features that exhibit a controlled variance in weight ratio of alloying metals within the feature can be carried out in a manner similar to the method described above for producing metal alloy features wherein variance in the weight ratio of alloying metals in the formed feature is minimized.
  • methods for controlling the weight ratio variance as opposed to minimizing the variance involve adjusting the current density/deposition rates so that the desired variable weight ratio of alloying metals is achieved.
  • a metal alloy feature can be formed wherein the weight ratio of alloying metals varies within the formed feature as depicted by dotted line 600 in FIG. 6 .
  • dotted line 600 represents a process for forming a metal alloy feature that is carried out at a constant deposition rate of 5 microns per minute.
  • FIG. 6 predicts the silver content of the deposited alloy will increase as the recessed feature is filled. This variation in silver content of the deposited metal alloy feature is graphically illustrated in FIG. 7 .
  • the current density and deposition rate can be varied in a manner that results in the ratio of alloying metals in the deposited metal feature varying to the desired degree.

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US11/507,066 2006-08-18 2006-08-18 Method and system for depositing alloy composition Abandoned US20080041727A1 (en)

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Application Number Priority Date Filing Date Title
US11/507,066 US20080041727A1 (en) 2006-08-18 2006-08-18 Method and system for depositing alloy composition
US11/840,748 US9359683B2 (en) 2006-08-18 2007-08-17 Method of forming metal and metal alloy features
PCT/US2007/076215 WO2008022316A2 (en) 2006-08-18 2007-08-17 Method and system for depositing alloy composition
TW096130449A TWI431169B (zh) 2006-08-18 2007-08-17 沉積合金組成物的方法和系統
US15/174,735 US20160355941A1 (en) 2006-08-18 2016-06-06 Method of forming metal and metal alloy features

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013066454A3 (en) * 2011-08-02 2013-07-11 Massachusetts Institute Of Technology Tuning nano-scale grain size distribution in multilayered alloys electrodeposited using ionic solutions, including a1-mn and similar alloys
US20150348925A1 (en) * 2014-05-29 2015-12-03 Applied Materials, Inc. Reduced titanium undercut in etch process
CN114613436A (zh) * 2022-05-11 2022-06-10 北京雅康博生物科技有限公司 血样Motif特征提取方法及癌症早筛模型构建方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080041727A1 (en) * 2006-08-18 2008-02-21 Semitool, Inc. Method and system for depositing alloy composition
US7713861B2 (en) * 2007-10-13 2010-05-11 Wan-Ling Yu Method of forming metallic bump and seal for semiconductor device
US20100126849A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Apparatus and method for forming 3d nanostructure electrode for electrochemical battery and capacitor
JP2011204750A (ja) * 2010-03-24 2011-10-13 Elpida Memory Inc 半導体装置の製造方法
KR101506910B1 (ko) * 2012-09-27 2015-03-30 티디케이가부시기가이샤 이방성 도금 방법 및 박막 코일
US9758896B2 (en) * 2015-02-12 2017-09-12 Applied Materials, Inc. Forming cobalt interconnections on a substrate
US9875979B2 (en) * 2015-11-16 2018-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive external connector structure and method of forming
JP6524939B2 (ja) * 2016-02-26 2019-06-05 豊田合成株式会社 ニッケルめっき皮膜及びその製造方法
US10000860B1 (en) * 2016-12-15 2018-06-19 Applied Materials, Inc. Methods of electrochemical deposition for void-free gap fill
US20180355502A1 (en) * 2017-06-08 2018-12-13 Macdermid Enthone Inc. Process for metalization of copper pillars in the manufacture of microelectronics
US11377749B1 (en) 2017-10-17 2022-07-05 Seagate Technology Llc Electrodeposition of high damping magnetic alloys
US11152020B1 (en) 2018-05-14 2021-10-19 Seagate Technology Llc Electrodeposition of thermally stable alloys
CN111719178B (zh) * 2020-07-02 2021-10-01 橙河微系统科技(上海)有限公司 一种三维微区电化学沉积控制方法及其适配系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245094A1 (en) * 2003-06-06 2004-12-09 Mchugh Paul R. Integrated microfeature workpiece processing tools with registration systems for paddle reactors
US20050245083A1 (en) * 1998-03-20 2005-11-03 Semitool, Inc. Apparatus and method for electrochemically depositing metal on a semiconductor workpiece
US20060070885A1 (en) * 1999-09-17 2006-04-06 Uzoh Cyprian E Chip interconnect and packaging deposition methods and structures
US20080067072A1 (en) * 2006-08-18 2008-03-20 Semitool, Inc. Method and system for depositing alloy composition

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3480522A (en) * 1966-08-18 1969-11-25 Ibm Method of making magnetic thin film device
CH668431A5 (en) 1986-04-09 1988-12-30 Galvasol S A Workpiece agitator esp. for electroplating bath - comprises stepping motor providing controllable rotor displacements
JPH01304753A (ja) * 1988-06-02 1989-12-08 Seiko Instr Inc はんだバンプめっき方法
US6120641A (en) * 1998-05-12 2000-09-19 Semitool, Inc. Process architecture and manufacturing tool sets employing hard mask patterning for use in the manufacture of one or more metallization levels on a workpiece
US6140241A (en) * 1999-03-18 2000-10-31 Taiwan Semiconductor Manufacturing Company Multi-step electrochemical copper deposition process with improved filling capability
US6297155B1 (en) * 1999-05-03 2001-10-02 Motorola Inc. Method for forming a copper layer over a semiconductor wafer
JP4049978B2 (ja) * 1999-09-15 2008-02-20 三星電子株式会社 メッキを用いた金属配線形成方法
US6344124B1 (en) * 2000-09-27 2002-02-05 International Business Machines Corporation Method and apparatus for electroplating alloy films
US6689686B2 (en) * 2001-09-27 2004-02-10 Texas Instruments Incorporated System and method for electroplating fine geometries
US7569131B2 (en) * 2002-08-12 2009-08-04 International Business Machines Corporation Method for producing multiple magnetic layers of materials with known thickness and composition using a one-step electrodeposition process
US6987235B2 (en) 2003-06-06 2006-01-17 Rockwell Automation Technologies, Inc. Redundant switch having torsional compliance and arc-absorbant thermal mass
CN1920105B (zh) * 2003-10-22 2010-12-08 内克斯系统公司 用于对工件进行流体处理的方法和设备
US7030016B2 (en) * 2004-03-30 2006-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Post ECP multi-step anneal/H2 treatment to reduce film impurity
US7194798B2 (en) * 2004-06-30 2007-03-27 Hitachi Global Storage Technologies Netherlands B.V. Method for use in making a write coil of magnetic head
US20060213778A1 (en) * 2005-03-23 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for electrochemical plating on semiconductor wafers
US7850836B2 (en) * 2005-11-09 2010-12-14 Nanyang Technological University Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050245083A1 (en) * 1998-03-20 2005-11-03 Semitool, Inc. Apparatus and method for electrochemically depositing metal on a semiconductor workpiece
US20060070885A1 (en) * 1999-09-17 2006-04-06 Uzoh Cyprian E Chip interconnect and packaging deposition methods and structures
US20040245094A1 (en) * 2003-06-06 2004-12-09 Mchugh Paul R. Integrated microfeature workpiece processing tools with registration systems for paddle reactors
US20080067072A1 (en) * 2006-08-18 2008-03-20 Semitool, Inc. Method and system for depositing alloy composition

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013066454A3 (en) * 2011-08-02 2013-07-11 Massachusetts Institute Of Technology Tuning nano-scale grain size distribution in multilayered alloys electrodeposited using ionic solutions, including a1-mn and similar alloys
CN103906863A (zh) * 2011-08-02 2014-07-02 麻省理工学院 在使用离子溶液电沉积的包括Al-Mn和类似合金的多层合金中调节纳米尺度的晶粒尺寸分布
US9783907B2 (en) 2011-08-02 2017-10-10 Massachusetts Institute Of Technology Tuning nano-scale grain size distribution in multilayered alloys electrodeposited using ionic solutions, including Al—Mn and similar alloys
US20150348925A1 (en) * 2014-05-29 2015-12-03 Applied Materials, Inc. Reduced titanium undercut in etch process
CN105304503A (zh) * 2014-05-29 2016-02-03 应用材料公司 蚀刻工艺中减少的钛底切
CN114613436A (zh) * 2022-05-11 2022-06-10 北京雅康博生物科技有限公司 血样Motif特征提取方法及癌症早筛模型构建方法

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US20160355941A1 (en) 2016-12-08
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