US20050191561A1 - Method and apparatus for producing phase shifter masks - Google Patents
Method and apparatus for producing phase shifter masks Download PDFInfo
- Publication number
- US20050191561A1 US20050191561A1 US10/614,429 US61442903A US2005191561A1 US 20050191561 A1 US20050191561 A1 US 20050191561A1 US 61442903 A US61442903 A US 61442903A US 2005191561 A1 US2005191561 A1 US 2005191561A1
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- coating
- phase shifter
- electron beam
- shifter mask
- mask
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 42
- 238000000576 coating method Methods 0.000 claims abstract description 42
- 238000010894 electron beam technology Methods 0.000 claims abstract description 26
- 239000011368 organic material Substances 0.000 claims abstract description 16
- 238000001459 lithography Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 150000002894 organic compounds Chemical class 0.000 claims description 16
- 230000007547 defect Effects 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- -1 gallium ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
Definitions
- the invention relates to a method for producing phase shifter masks.
- phase shifter masks phase shift masks
- material is deliberately applied to the substrate to produce a phase shift of up to 180° in the light that is used for lithography. The extent of the phase shift depends on the application. Very fine structures can then be produced by destructive interference.
- phase shifter masks During the production of phase shifter masks, it is important for them to be as free of defects as possible, since defects will be transferred to all of the components produced using the mask. Defects are, for example, holes in absorber layers or locally thinned phase shifter materials.
- a gallium-ion beam from a FIB (focused ion beam) device is passed through an organic gas for this purpose.
- the ion beam and the parameters of the gas can be varied in order to deposit thin polymer layers locally on the substrate.
- the polymer layers are formed from the gas phase, and cover bright field defects (for example due to lack of half-tone material).
- the next generation of lithography will use light at a wavelength of 157 nm.
- the polymer layers which are deposited by ion beams under the influence of the 157 nm radiation change their thickness in an uncontrolled manner, and, in particular, shrinkage can occur. This is disadvantageous since the shrinkage increases the optical transmission at the repaired point.
- the use of gallium ions for the deposition results in optical irreversible damage by direct implantation of gallium ions into the glass material of the phase shifter mask.
- a method for producing a phase shifter mask used for 157 nm lithography includes a step of, producing and/or processing a coating of an organic material on the phase shifter mask using an electron beam.
- the coating which is and/or can be at least partially arranged on the phase shifter mask and is composed of an organic material, is processed and/or produced with an electron beam.
- the coating it is particularly advantageous for the coating to be subsequently hardened by an electron beam.
- the coating is applied deliberately for repairing defects in a half-tone layer of the phase shifter mask.
- UV cleaning of the phase shifter mask it is also advantageous for UV cleaning of the phase shifter mask to be carried out after the coating with the decomposition product.
- an apparatus for producing a phase shifter mask for 157 nm lithography includes a device for emitting at least one electron beam for producing a coating on the phase shifter mask and/or for processing a coating that has at least partially been configured on the phase shifter mask.
- a device for emitting at least one electron beam for processing and/or producing a coating which is at least partially configured on the phase shifter mask are avoided by a device for emitting at least one electron beam for processing and/or producing a coating which is at least partially configured on the phase shifter mask.
- the device for emitting at least one electron beam prefferably be designed to deposit at least one organic coating on a phase shifter mask.
- the device for emitting at least one electron beam prefferably be controllable on a row and/or column basis, in particular for subsequent hardening.
- FIGS. 1A to 1 E are schematic illustrations of individual steps for one embodiment of the method.
- FIG. 2 is a block diagram of a device for emitting an electron beam.
- phase shifter mask 1 has, in a known manner, a quartz glass substrate 11 , which in this case is illustrated in white, and an absorber material 12 , which in this case is illustrated in shaded form, and which is used for deliberate phase shifting.
- a defect 13 has been found here in the phase shifter material 12 .
- a coating 14 of an organic material is deposited from the gas phase, and covers the defect 13 .
- any organic compound which has a high adsorption coefficient, may be used as the organic material so that good adhesion is achieved between the coating and the substrate 11 .
- the organic compound should be free of silicon-organic compounds and should have a high proportion of carbon, for example, aromatic compounds. Examples of suitable compounds are styrene and PHOST.
- the organic compounds should be removed by UV radiation in a slightly acidic atmosphere, so that aromatics containing halogens are separated as possible organic compounds.
- the deposition of the organic material as a coating 14 in this case takes place by using an electron beam.
- this coating can also be deposited by a different method.
- FIG. 1C shows a detail X (see FIG. 1B ).
- the defect is covered over a relatively large area by the coating 14 of organic material.
- an electron beam (which is not shown here) is pointed at the immediate region around the defect 13 . This region is represented by the field 15 in FIG. 1C .
- the electron beam scans this field in rows and/or columns, which leads to hardening of the organic material.
- the concentration gradient that is produced in the coating 14 results in the diffusion of organic molecules which are not yet reacted in the field 15 (surface diffusion), thus resulting in reinforcement of the hardening.
- the diffusion of the molecules is illustrated by arrows in FIG. 1C .
- the field 15 is illustrated in the hardened state in FIG. 1D .
- the wide-area coating and the subsequent diffusion means that there is no need to pass gases with extreme accuracy to the location to be repaired.
- a certain residual amount of gas, which is dependent on the partial pressure, is located above the substrate. Individual molecules are precipitated from this residual amount at those locations at which adsorption spaces have become free.
- the remaining coating 14 can now be removed, for example, by UV cleaning, so that the defect 13 that is covered by the field 15 remains (See FIG. 1E ).
- the method conditions for subsequent hardening depend on the organic compound that is deposited.
- low effective bias voltages 500 V to 1.5 kV must be used in the coating system in order to achieve dislocation of the energy (small depth penetration of the electron beam) close to the boundary surface, and thus secure fixing of the molecules.
- the strength of the trial current depends on the repair requirements and is typically between 1 nA and 10 pA, in order to achieve subsequent hardening which is highly controllable, but does not last for too long. Since the work is carried out using an electron microscope, it can be carried out at pressures of 10 ⁇ 6 torr.
- FIG. 2 is a block diagram of an apparatus 30 for producing a phase shifter mask for 157 nm lithography.
- the apparatus 30 includes a device 20 for emitting an electron beam.
- Such an electron beam can be used to deposit the coating 14 of the organic material as discussed above in the description of the method. Additionally or alternatively, as described above in the description of the method, an electron beam emitted from the device 20 can scan the field 15 in rows and/or columns, which hardens the organic material in the coating 14 .
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention relates to a method and an apparatus for producing phase shifter masks for 157 nm lithography. A coating has an organic material and is at least partially configured on the phase shifter mask. This coating is processed with an electron beam. This allows efficient production of very small structures, even for 157 nm lithography.
Description
- The invention relates to a method for producing phase shifter masks.
- Structures that are applied to a substrate using lithography, for example, for DRAM (Dynamic Random Access Memory) production, are becoming increasingly smaller in order to achieve a high degree of miniaturization. One technologically limiting factor in this case is the wavelength of the light that is used for lithography. Particularly small structures can be produced using phase shifter masks (phase shift masks), which are known per se, such as half-tone phase shifter masks or strong, alternating phase shifter masks. In this case, in addition to the chromium that is normally used for masks, material is deliberately applied to the substrate to produce a phase shift of up to 180° in the light that is used for lithography. The extent of the phase shift depends on the application. Very fine structures can then be produced by destructive interference.
- During the production of phase shifter masks, it is important for them to be as free of defects as possible, since defects will be transferred to all of the components produced using the mask. Defects are, for example, holes in absorber layers or locally thinned phase shifter materials.
- With 193 nm lithography, it is known that defects can be repaired by the deposition (induced by ion beams) of thin polymer layers from the gas phase. A gallium-ion beam from a FIB (focused ion beam) device is passed through an organic gas for this purpose. The ion beam and the parameters of the gas can be varied in order to deposit thin polymer layers locally on the substrate. The polymer layers are formed from the gas phase, and cover bright field defects (for example due to lack of half-tone material).
- The next generation of lithography will use light at a wavelength of 157 nm. In this case, it has been found that the polymer layers which are deposited by ion beams under the influence of the 157 nm radiation change their thickness in an uncontrolled manner, and, in particular, shrinkage can occur. This is disadvantageous since the shrinkage increases the optical transmission at the repaired point. The use of gallium ions for the deposition results in optical irreversible damage by direct implantation of gallium ions into the glass material of the phase shifter mask.
- It is accordingly an object of the invention to provide an apparatus for producing a phase shifter mask for 157 nm lithography and a method for producing a phase shifter mask used for 157 nm lithography, which overcome the above-mentioned disadvantages of the prior art apparatus and methods of this general type.
- With the foregoing and other objects in view there is provided, in accordance with the invention, a method for producing a phase shifter mask used for 157 nm lithography. The method includes a step of, producing and/or processing a coating of an organic material on the phase shifter mask using an electron beam.
- The coating, which is and/or can be at least partially arranged on the phase shifter mask and is composed of an organic material, is processed and/or produced with an electron beam.
- In this case, it is advantageous to:
-
- configure the phase shifter mask in a space with at least one gaseous organic compound;
- deposit at least one coating of the organic compound from the gas phase;
- at least partially point at least one electron beam at the coating of the organic compound; and
- to decompose the coating by the electron beam, so that diffusion of organic compounds starts from non-irradiated areas of the coating.
- In this case, it is particularly advantageous for the coating to be subsequently hardened by an electron beam.
- In one advantageous refinement of the method, the coating is applied deliberately for repairing defects in a half-tone layer of the phase shifter mask.
- In this case, it is also advantageous for UV cleaning of the phase shifter mask to be carried out after the coating with the decomposition product.
- With the foregoing and other objects in view there is provided, in accordance with the invention, an apparatus for producing a phase shifter mask for 157 nm lithography. The apparatus includes a device for emitting at least one electron beam for producing a coating on the phase shifter mask and/or for processing a coating that has at least partially been configured on the phase shifter mask.
- Disadvantages, for example, in the ion beam deposition, are avoided by a device for emitting at least one electron beam for processing and/or producing a coating which is at least partially configured on the phase shifter mask.
- In this case, it is advantageous for the device for emitting at least one electron beam to be designed to deposit at least one organic coating on a phase shifter mask.
- It is particularly advantageous for the device for emitting at least one electron beam to be controllable on a row and/or column basis, in particular for subsequent hardening.
- Other features which are considered as characteristic for the invention are set forth in the appended claims.
- Although the invention is illustrated and described herein as embodied in a method and apparatus for producing phase shifter masks, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
- The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
-
FIGS. 1A to 1E are schematic illustrations of individual steps for one embodiment of the method; and -
FIG. 2 is a block diagram of a device for emitting an electron beam. - Referring now to the figures of the drawing in detail and first, particularly, to
FIGS. 1A to 1E thereof, there is shown the individual steps of one embodiment of the method. These steps are based on aphase shifter mask 1. The phase shifter mask has, in a known manner, aquartz glass substrate 11, which in this case is illustrated in white, and anabsorber material 12, which in this case is illustrated in shaded form, and which is used for deliberate phase shifting. During the process of producing thephase shifter material 12 on thesubstrate 11, it is assumed that adefect 13 has been found here in thephase shifter material 12. - In the step illustrated in
FIG. 1B , acoating 14 of an organic material is deposited from the gas phase, and covers thedefect 13. - In principle, any organic compound, which has a high adsorption coefficient, may be used as the organic material so that good adhesion is achieved between the coating and the
substrate 11. However, the organic compound should be free of silicon-organic compounds and should have a high proportion of carbon, for example, aromatic compounds. Examples of suitable compounds are styrene and PHOST. - The organic compounds should be removed by UV radiation in a slightly acidic atmosphere, so that aromatics containing halogens are separated as possible organic compounds.
- The deposition of the organic material as a
coating 14 in this case takes place by using an electron beam. Alternatively, this coating can also be deposited by a different method. -
FIG. 1C shows a detail X (seeFIG. 1B ). The defect is covered over a relatively large area by thecoating 14 of organic material. Now, according to the invention, an electron beam (which is not shown here) is pointed at the immediate region around thedefect 13. This region is represented by thefield 15 inFIG. 1C . The electron beam scans this field in rows and/or columns, which leads to hardening of the organic material. The concentration gradient that is produced in thecoating 14 results in the diffusion of organic molecules which are not yet reacted in the field 15 (surface diffusion), thus resulting in reinforcement of the hardening. The diffusion of the molecules is illustrated by arrows inFIG. 1C . Thefield 15 is illustrated in the hardened state inFIG. 1D . - The wide-area coating and the subsequent diffusion means that there is no need to pass gases with extreme accuracy to the location to be repaired.
- A certain residual amount of gas, which is dependent on the partial pressure, is located above the substrate. Individual molecules are precipitated from this residual amount at those locations at which adsorption spaces have become free.
- The remaining
coating 14 can now be removed, for example, by UV cleaning, so that thedefect 13 that is covered by thefield 15 remains (SeeFIG. 1E ). - The method conditions for subsequent hardening depend on the organic compound that is deposited. The first time a raster is formed for the defect location, low effective bias voltages of 500 V to 1.5 kV must be used in the coating system in order to achieve dislocation of the energy (small depth penetration of the electron beam) close to the boundary surface, and thus secure fixing of the molecules. The strength of the trial current depends on the repair requirements and is typically between 1 nA and 10 pA, in order to achieve subsequent hardening which is highly controllable, but does not last for too long. Since the work is carried out using an electron microscope, it can be carried out at pressures of 10−6 torr.
-
FIG. 2 is a block diagram of anapparatus 30 for producing a phase shifter mask for 157 nm lithography. Theapparatus 30 includes adevice 20 for emitting an electron beam. Such an electron beam can be used to deposit thecoating 14 of the organic material as discussed above in the description of the method. Additionally or alternatively, as described above in the description of the method, an electron beam emitted from thedevice 20 can scan thefield 15 in rows and/or columns, which hardens the organic material in thecoating 14. - The embodiment of the invention is not restricted to the preferred exemplary embodiments described above. In fact, a number of variants are feasible, which make use of the method according to the invention and of the apparatus according to the invention even for fundamentally different types of embodiments.
Claims (10)
1. A method for producing a phase shifter mask used for 157 nm lithography, the method which comprises, producing and/or processing a coating of an organic material on the phase shifter mask using an electron beam.
2. The method according to claim 1 , which comprises:
configuring the phase shifter mask in a space with at least one gaseous organic compound and depositing a coating of the organic compound onto the phase shifter mask to thereby obtain the coating of the organic material on the phase shifter mask; and
performing the step of processing the coating of the organic material, which is the coating of the organic compound, by pointing the electron beam at the coating of the organic compound to decompose the coating of the organic compound and initiate diffusion of organic compounds from non-irradiated areas of the coating of the organic compound.
3. The method according to claim 1 , which comprises subsequently hardening the coating of the organic material using an electron beam.
4. The method according to claim 1 , wherein the coating of the organic material is configured on the phase shifter mask for repairing defects in a half-tone layer of the phase shifter mask.
5. The method according to claim 1 , which comprises, after obtaining a decomposition product from the coating of the organic material, performing a UV cleaning of the phase shifter mask.
6. An apparatus for producing a phase shifter mask for 157 nm lithography, the apparatus comprising a device for emitting at least one electron beam for performing at least one step selected from a group consisting of producing a coating on the phase shifter mask and processing a coating that has at least partially been configured on the phase shifter mask.
7. The apparatus according to claim 6 , wherein said device for emitting at least one electron beam is designed to deposit at least one organic coating on the phase shifter mask.
8. The apparatus according to claim 6 , wherein said device for emitting at least one electron beam is controllable based on at least one scan selected from a group consisting of a row scan and a column scan.
9. The apparatus according to claim 6 , wherein, for hardening the coating that has at least partially been configured on the phase shifter mask, said device for emitting at least one electron beam is controllable based on at least one scan selected from a group consisting of a row scan and a column scan.
10. The apparatus according to claim 6 , wherein, for hardening the coating that has been produced on the phase shifter mask, said device for emitting at least one electron beam is controllable based on at least one scan selected from a group consisting of a row scan and a column scan.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/252,476 US7211355B2 (en) | 2002-07-04 | 2005-10-18 | Method for producing phase shifter masks |
US11/742,273 US20070202419A1 (en) | 2002-07-04 | 2007-04-30 | Method for Producing Phase Shifter Masks |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10230675A DE10230675B4 (en) | 2002-07-04 | 2002-07-04 | Method for producing phase shift masks |
DE10230675.3 | 2002-07-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/252,476 Division US7211355B2 (en) | 2002-07-04 | 2005-10-18 | Method for producing phase shifter masks |
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US20050191561A1 true US20050191561A1 (en) | 2005-09-01 |
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US10/614,429 Abandoned US20050191561A1 (en) | 2002-07-04 | 2003-07-07 | Method and apparatus for producing phase shifter masks |
US11/252,476 Expired - Fee Related US7211355B2 (en) | 2002-07-04 | 2005-10-18 | Method for producing phase shifter masks |
US11/742,273 Abandoned US20070202419A1 (en) | 2002-07-04 | 2007-04-30 | Method for Producing Phase Shifter Masks |
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US11/252,476 Expired - Fee Related US7211355B2 (en) | 2002-07-04 | 2005-10-18 | Method for producing phase shifter masks |
US11/742,273 Abandoned US20070202419A1 (en) | 2002-07-04 | 2007-04-30 | Method for Producing Phase Shifter Masks |
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US (3) | US20050191561A1 (en) |
DE (1) | DE10230675B4 (en) |
NL (1) | NL1023803C2 (en) |
Cited By (2)
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US20090095422A1 (en) * | 2007-09-06 | 2009-04-16 | Hitachi Kokusai Electric Inc. | Semiconductor manufacturing apparatus and substrate processing method |
US20140246605A1 (en) * | 2013-03-04 | 2014-09-04 | GlobalFoundries, Inc. | Defect removal process |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10230675B4 (en) * | 2002-07-04 | 2007-01-25 | Infineon Technologies Ag | Method for producing phase shift masks |
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-
2002
- 2002-07-04 DE DE10230675A patent/DE10230675B4/en not_active Expired - Fee Related
-
2003
- 2003-07-03 NL NL1023803A patent/NL1023803C2/en not_active IP Right Cessation
- 2003-07-07 US US10/614,429 patent/US20050191561A1/en not_active Abandoned
-
2005
- 2005-10-18 US US11/252,476 patent/US7211355B2/en not_active Expired - Fee Related
-
2007
- 2007-04-30 US US11/742,273 patent/US20070202419A1/en not_active Abandoned
Patent Citations (6)
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US4197332A (en) * | 1977-10-26 | 1980-04-08 | International Business Machines Corporation | Sub 100A range line width pattern fabrication |
US4550257A (en) * | 1984-06-29 | 1985-10-29 | International Business Machines Corporation | Narrow line width pattern fabrication |
US4698236A (en) * | 1984-10-26 | 1987-10-06 | Ion Beam Systems, Inc. | Augmented carbonaceous substrate alteration |
US5147823A (en) * | 1988-09-20 | 1992-09-15 | Sony Corporation | Method for forming an ultrafine metal pattern using an electron beam |
US5429730A (en) * | 1992-11-02 | 1995-07-04 | Kabushiki Kaisha Toshiba | Method of repairing defect of structure |
US20030047691A1 (en) * | 2001-07-27 | 2003-03-13 | Musil Christian R. | Electron beam processing |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090095422A1 (en) * | 2007-09-06 | 2009-04-16 | Hitachi Kokusai Electric Inc. | Semiconductor manufacturing apparatus and substrate processing method |
US20140246605A1 (en) * | 2013-03-04 | 2014-09-04 | GlobalFoundries, Inc. | Defect removal process |
US8912489B2 (en) * | 2013-03-04 | 2014-12-16 | Globalfoundries Inc. | Defect removal process |
Also Published As
Publication number | Publication date |
---|---|
NL1023803A1 (en) | 2004-01-06 |
DE10230675A1 (en) | 2004-01-29 |
US20070202419A1 (en) | 2007-08-30 |
NL1023803C2 (en) | 2005-04-05 |
US7211355B2 (en) | 2007-05-01 |
DE10230675B4 (en) | 2007-01-25 |
US20060037939A1 (en) | 2006-02-23 |
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Owner name: QIMONDA AG, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INFINEON TECHNOLOGIES AG;REEL/FRAME:023796/0001 Effective date: 20060425 |