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US20050173250A1 - Device and method for monitoring an electrolytic process - Google Patents

Device and method for monitoring an electrolytic process Download PDF

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Publication number
US20050173250A1
US20050173250A1 US10/518,100 US51810004A US2005173250A1 US 20050173250 A1 US20050173250 A1 US 20050173250A1 US 51810004 A US51810004 A US 51810004A US 2005173250 A1 US2005173250 A1 US 2005173250A1
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Prior art keywords
reference electrode
anode
cathode
metal
voltage
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US10/518,100
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English (en)
Inventor
Andreas Thies
Thomas Dretschkow
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Atotech Deutschland GmbH and Co KG
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Individual
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Assigned to ATOTECH DEUTSCHLAND GMBH reassignment ATOTECH DEUTSCHLAND GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DRETSCHKOW, THOMAS, THIES, ANDREAS
Publication of US20050173250A1 publication Critical patent/US20050173250A1/en
Assigned to BARCLAYS BANK PLC, AS COLLATERAL AGENT reassignment BARCLAYS BANK PLC, AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ATOTECH DEUTSCHLAND GMBH, ATOTECH USA INC
Assigned to ATOTECH DEUTSCHLAND GMBH, ATOTECH USA, LLC reassignment ATOTECH DEUTSCHLAND GMBH RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: BARCLAYS BANK PLC, AS COLLATERAL AGENT
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus

Definitions

  • the invention relates to a device and a method for monitoring an electrolytic process, more specifically for electrolytically depositing metal onto a substrate.
  • Integrated circuits on wafers are manufactured generally using etching and deposition processes in conjunction with photolithographic processes.
  • metallic conductive patterns have been customarily produced using sputter processes for establishing electrical conductor connections on the wafers.
  • galvanic processes have been increasingly utilized to manufacture integrated circuits on wafers.
  • the metal deposition of copper, nickel, gold and tin in what is termed the “packaging” process i.e., when metal is deposited onto chip carriers, and in rewiring becomes increasingly important.
  • an electrolytic metal deposition process is initiated on a thin starting metal layer, the so-called seed layer, also termed plating base.
  • the starting layer is placed in electric contact using suited mechanical contacts and is placed in an electroplating bath containing the metal to be deposited in solution.
  • Current is caused to flow through the starting layer and the counter electrode using an external current source, for example of a rectifier energized by the electric network, and a counter electrode so that metal is deposited onto the starting layer of the wafer.
  • the amount and, as a result thereof, the coating thickness of the deposited metal is controlled through Faraday's law.
  • Coating thickness distribution on the wafer may be positively affected using suited shields or segmented anodes (counter electrodes). Soluble anodes are thereby used to keep the metal ion concentration in the electrolyte fluid constant or, alternatively, insoluble (inert) anodes, in which case the metal ion content must be kept constant, making additional provisions.
  • U.S. Pat. No. 5,234,572 A describes a method for replenishing metal ions to a plating bath.
  • U.S. Pat. No. 5,234,572 A suggests a measuring arrangement that measures the potential of the cathode (counter electrode) using a reference electrode additionally placed in the plating bath and made of the same metal as the anode. The quantity of electricity conducted is controlled such that the measured potential of the counter electrode may not be negative with respect to said reference electrode. This prevents metal ions from depositing on the counter electrode.
  • the counter electrode and a soluble electrode (anode) are connected to a DC supply.
  • a voltmeter is used for measuring the potential of the counter electrode relative to the reference electrode. The potentials at the counter electrode and at the soluble electrode, which vary with the current flow, are shown in a figure.
  • the copper depostion bath contains, in addition to the usual bath constituents, Fe(III) compounds for example and that these compounds cause the copper pieces to dissolve to form copper ions, yielding Fe(II) compounds in the process.
  • Fe(II) compounds formed are reoxidized to Fe(III) compounds at the insoluble anodes.
  • All of the known electroplating baths contain, in addition to the metal ions to be deposited, auxiliary agents for influencing the metal deposition.
  • these agents are organic compounds for influencing the structure of the deposited layer on the one side and salts, acids or bases that are added for the purpose of stabilizing the bath and of increasing the electric conductivity thereof on the other side.
  • the voltage required for deposition is reduced as a result thereof, thus generating a minimum of Joule heat. This increases the safety of the process. Certain processes are only made possible by adding these agents.
  • conductive patterns are presently produced according to the damascene process.
  • a dielectric layer is first applied on the semiconductor substrate for this purpose.
  • the vias and trenches required for receiving the desired conductive pattern are etched in the dielectric layer, usually using a dry etch process.
  • a diffusion barrier in most cases tantalum nitride, tantalum
  • a conductive layer in most cases sputtered copper
  • the depressions i.e., the vias and trenches, are electrolytically filled using the “trench filling process”.
  • the excess must be subsequently removed from the unwanted locations, meaning from the zones outside the vias and trenches.
  • Multilayer circuits can be made by reiterating the process i.e., by repeatedly applying the dielectric, made from silicon dioxide for example, forming the depressions by etching and depositing copper.
  • the conductive pattern more specifically made from copper, is made, it can be found out, in the polished sections intended for control, that metal defects (voids) readily form in the deposited structures, said defects possibly leading to a functional breakdown of the entire circuit.
  • the problem the present invention is facing is to avoid the drawbacks of the known devices and methods and more specifically to find measures permitting to reliably prevent such defects from forming.
  • the invention provides the device according to claim 1 and the method according to claim 7 .
  • Preferred embodiments of the invention are indicated in the subordinate claims.
  • the device according to the invention serves to monitor an electrolytic process, more specifically the electrolytic metal deposition process, during manufacturing of integrated circuits of semiconductor substrates (wafers) and of circuit structures on chip carriers.
  • the term “wafer” will be used herein after to designate any workpiece.
  • the terms “deposition electrolyte” or “deposition electrolyte fluid” will be used to refer to the electrolyte fluid used for carrying out the electrolytic process.
  • said fluid could also be an etch fluid if the electrolytic process is an electrolytic etch process.
  • Possible electrolytic processes are both electrolytic deposition methods and electrolytic metal etching methods.
  • the invention can also be utilized for other electrolytic processes than those mentioned herein.
  • the term “electrolytic deposition process” will be used to refer to all the other electrolytic processes as well.
  • the invention provides a device and a method.
  • the device is comprised of at least one anode and of at least one cathode that are in contact with an electrolyte fluid, an electric current flow being generated between them.
  • At least one reference electrode is disposed at (near) the surface of the at least one anode or at (near) the surface of the at least one cathode.
  • a voltmeter for determining the respective electric voltages between the at least one anode and the at least one reference electrode and between the at least one reference electrode and the at least one cathode is further provided in accordance with the invention.
  • This arrangement permits to simultaneously register electrolytic partial processes at the various electrodes, this very provision permitting to also measure time-variant processes. It thereby makes no matter whether the electrodes are only immersed into the electrolyte fluid during measurement or whether a voltage is applied between cathode and anode only when the two electrodes are contacting the electrolyte fluid.
  • the cathode is a wafer or a chip carrier substrate and the anode a metal plate.
  • metal is deposited onto the wafer or the chip carrier substrate during the electrolytic process.
  • the device in accordance with the invention is more specifically comprised of at least one first reference electrode which is disposed at (near) the surface of the at least one anode, and of at least one second reference electrode which is disposed at (near) the surface of the at least one cathode.
  • Voltmeters for measuring the electric voltages between the at least one anode and the at least one first reference electrode, between the at least one first and the at least one second reference electrode and between the at least one second reference electrode and the at least one cathode are further provided.
  • This monitoring device serves to measure the electric voltages between the anode and the first reference electrode, between the first reference electrode and the second reference electrode and between the second reference electrode and the cathode.
  • Metal starting layers which are utilized on wafers are generally very thin for reasons related to cost and process.
  • the starting layers usually are from about 5-25 nm thick.
  • the starting layers on the surfaces of the wafers are about 100 nm thick.
  • Such type layers can be quickly removed, at least within the structures, during immersion in the electrolyte solution since the etch rate in the electrolyte solutions used is quite high.
  • the etch rate is about 10 nm/min under usual electrolysis conditions. Under these conditions, the coating thickness that remains prior to metal deposition may, under certain circumstances, not suffice to ensure reliable metal coating.
  • the etch rate depends, inter alia, on the type of electrolyte solution used, the conditions chosen for the deposition process and the type of starting layer.
  • the thin starting metal layer is particularly sensitive to fluctuations of the deposition process and to corrosion. The slightest reduction in the thickness of this layer may suffice to jeopardize the safe start of the process in the nanostructures for example.
  • a current flows between anode and cathode.
  • An electric voltage composed of the sum of the partial voltages mentioned is needed to generate said current flow.
  • the total voltage is more specifically the result of the sum of anodic and cathodic charge transfer overvoltage, polarization overvoltages and crystallization overvoltages and also of concentration overvoltages and of the voltage drop due to the electrolyte resistance and the voltage drops in the electrical feed lines.
  • reference electrodes are utilized, which are disposed directly on the surface of the anode or cathode.
  • the reference electrodes are to be brought so close to the surfaces that the potential can be measured directly at the respective one of the surfaces.
  • the reference electrodes can for example be brought so close to the respective one of the surfaces that the spacing therefrom is less than 1 mm, for example 0.2 mm.
  • the reference electrodes may also be arranged for example in the plane of the anode's or cathode's surface beside the surface, but in immediate proximity thereto, although not directly in front of said surface.
  • the reference electrodes thereby need not be brought to contact the surfaces.
  • Another possibility consists in placing a small container containing a conductive electrolyte on the respective surface or in proximity thereto, the reference electrode in said container permitting to detect the potential at the surface.
  • two reference electrodes are provided: the first of the two reference electrodes is arranged at the surface of the anode and the second reference electrode at the surface of the cathode.
  • the influence of the voltage drop due to the electric resistance of the electrolyte can be detected separately in the form of the electric voltage between the two reference electrodes.
  • the other voltage drops measured between a respective one of the reference electrodes and the anode or cathode at the surface of which said electrodes are disposed include the voltage drops occurring in proximity to the anode or cathode surface and more specifically the charge transfer, crystallization and concentration overvoltages.
  • the various voltage drops in different regions of the electrolytic cell can thus be detected and, as a result thereof, the influence of the afore mentioned factors (such as the type of the electrolyte solution, the properties of the starting layer and others) can be detected separately and analyzed accordingly. Variations due to the influencing variables mentioned may thus be identified so that appropriate provisions can be made in the event of such changes.
  • An advantage of the invention is that existing electroplating plants can be readily retrofitted with the means of the invention since no substantial structural extension is needed.
  • Stable reference electrodes more specifically contain a metal that is in equilibrium with a hardly soluble salt of said metal and an electrolyte.
  • Such type reference electrodes are for example electrodes of the second or third order since these electrodes provide a constant reference potential.
  • Reference electrodes of the second order are reference electrodes in which the concentration of the potential-determining ions is determined by the presence of a hardly soluble compound the ions of which are the same as the potential-determining ions.
  • Reference electrodes of the third order are reference electrodes in which the activity of the potential-determining ions is determined by the presence of two solid phases.
  • Reference electrodes of the second order are more specifically the calomel electrode, the silver/silver chloride electrode, the mercuric sulfate electrode and the mercuric oxide electrode.
  • Reference electrodes of the third order may for example be a zinc rod that is in equilibrium with a solution of calcium ions in the presence of a precipitate made from zinc and calcium oxalate.
  • One reference electrode is mounted in proximity to the anode, another in proximity to the wafer.
  • the process is controlled by measuring the voltage between the anode and the first reference electrode, between the first reference electrode and the second reference electrode and between the second reference electrode and the cathode during the electrolytic process.
  • the voltage measured between the first reference electrode and the second reference electrode is the result of variations of the electrolyte resistance which are indicative of the unstable composition of the electrolyte or of the irregular fluid flow within the processing tank.
  • Variations of the voltage measured between the first reference electrode and the anode are additionally indicative of an unstable anode process.
  • a soluble anode being used, this may be due to the consumption of the anode, to a change in the anode film or to a varying anode geometry.
  • an inert (insoluble) anode such a change in the measured voltage may also be indicative of a failure of this anode (the active anode layer may for example peel off) or of poor redox species, e.g., Fe(II) and Fe(III) compounds, supply to the anode, for example in the event the method described in DE 100 15 146 C1 is performed.
  • Variations of the voltage measured between the second reference electrode and the cathode are indicative of an unstable cathode process such as an altered thickness of the starting layer, for example because this layer is attacked by the metal deposition solution or because the layer has never been thick enough.
  • a voltage difference between the starting layer and the nearest reference electrode, the second reference electrode for example can be applied by a power rectifier prior to immersion.
  • the proper choice of the potential of the starting layer permits to prevent it from corroding during immersion and possibly in the wetting phase as well.
  • the respective one of the reference electrodes must be brought as close as possible to the associated electrode.
  • the workpiece (the cathode for example) and the counter electrode (the anode for example) must thereby be prevented from being unshielded in order for the deposited metal to be distributed as uniformly as possible.
  • the reference electrodes contact the surface of the anode or of the cathode through at least one capillary.
  • the measurement of the voltages between the reference electrodes and between a respective one of the reference electrodes and the anode and cathode, respectively is a high resistance measurement, but a very little current flows through the measuring arrangement.
  • the capillary can be very thin so that contamination of the electrolyte of the electrolytic process through the electrolytes of the reference electrodes is minimized.
  • electrolyte fluid of the electrolytic process is supplied to the respective one of the reference electrodes via the capillaries.
  • the electrolyte of the reference electrode is thus prevented from entering by diffusion into the deposition electrolyte.
  • customary electroplating arrangements made from platinum for example, can be utilized in which the anode and the semiconductor substrate are paralleled and oriented horizontally or tilted from horizontal.
  • the anode and the semiconductor substrate can also be oriented vertically.
  • the two electrodes are located in a tank configured to suit the purpose, a cylindrical tank for example, which accommodates the electrolyte fluid and the electrodes.
  • the anode is disposed on the bottom of the cylindrical tank and the semiconductor substrate in the upper portion thereof.
  • the electrolyte fluid can flow through the tank in a certain manner.
  • the reference electrodes may be housed in separate containers communicating with the cylindrical tank via the capillaries mentioned.
  • the capillaries are disposed in the wall of the tank in such a manner that they are located in immediate proximity to the respective one of the electrodes.
  • Another advantage of the present invention is that the device in accordance with the invention and the method permit to control the various partial processes which have been described as taking place at the various electrodes, with the possibility of measuring certain voltages (potentials) concurrently. This provision permits to locate problems in current transfer.
  • FIG. 1 is a schematic cross section of a structure (trench, via) in a dielectric on a semiconductor substrate,
  • FIG. 2 is a schematic representation of the potential differences in an anode and cathode arrangement with a respective reference electrode being provided in proximity to the anode and in proximity to the cathode,
  • FIG. 3 is a schematic sectional view of a deposition cell
  • FIG. 4 is a schematic view of a deposition cell for problem analysis of current fluctuations during deposition.
  • FIG. 1 shows the coating thickness distribution of the starting layer 2 in proximity to and within a structure 4 in a dielectric layer 3 on a semiconductor substrate.
  • the structure 4 is 0.2 ⁇ m wide and about 1 ⁇ m deep.
  • the starting layer 2 is approximately 100 nm thick.
  • the starting layer 2 is much thinner at the bottom of the structure 4 , though. There, it is only 5-25 nm thick. In this lower region, there is the risk that the layer 2 is removed to such an extent during immersion and subsequent wetting of the starting layer 2 with a metal deposition electrolyte that no metal or but a very thin layer thereof is left at the bottom of the structure 4 . As a result, no metal can be deposited onto this site during the subsequent electrolytic metal plating process.
  • FIG. 2 is a schematic illustration of the potential difference between the anode 5 and the cathode 1 in the space containing the electrolyte.
  • Current delivered by a current supply 6 flows between anode 5 and cathode 1 .
  • the current supply 6 may be a power rectifier for example.
  • the voltage U delivered by the current supply 6 is measured using a voltmeter 7 .
  • the voltage U is also termed clamp voltage.
  • a first reference electrode 8 In proximity to the anode 5 there is disposed a first reference electrode 8 . Likewise, a second reference electrode 9 is disposed in proximity to the cathode 1 .
  • the potential difference in the space containing the electrolyte between the anode 5 and the cathode 1 is labeled with the numeral 10 .
  • the potential difference 10 is divided in only three portions 11 , 12 and 13 , the portions 11 and 13 being generated by the diffusion and crystallization overvoltages and portion 12 arising from the voltage drop generated by the electric resistance of the electrolyte.
  • the voltage drops mentioned can be determined in a simple manner by measuring the electric voltages between the anode 5 and the first reference electrode 8 using the first voltmeter 14 , between the first reference electrode 8 and the second reference electrode 9 using the second voltmeter 15 and between the second reference electrode 9 and the cathode 1 using the third voltmeter 16 .
  • the sum of the partial voltages 11 , 12 , 13 as measured by the voltmeters 14 , 15 and 16 yields the clamp voltage U.
  • the voltage drop 11 is measured by voltmeter 14 , the voltage drop 12 by voltmeter 15 and the voltage drop 13 by voltmeter 16 .
  • FIG. 3 is a schematic illustration of an arrangement for electrolytically depositing metal on a semiconductor substrate 1 .
  • the arrangement has a tank 20 and an anode 5 on the bottom of the tank 20 and a semiconductor substrate 1 employed as a cathode in the upper portion of the tank 20 .
  • the tank 20 is filled with electrolyte fluid 22 to level 21 .
  • Fluid 22 can for example enter the tank 20 from the bottom and flow through the anode 5 .
  • the anode 5 is preferably perforated for this purpose.
  • a first capillary 23 is embedded in proximity to the anode 5 and a second capillary 24 in proximity to the semiconductor substrate 1 .
  • Electrolyte fluid can flow in a small volume flow through said capillaries 23 , 24 into the reference electrode containers 25 and 26 mounted to the sides thereof. This prevents electrolyte fluid, which may be contained in said containers 25 , 26 and has another formulation than the deposition fluid 22 , from entering tank 20 .
  • the containers 25 , 26 accommodate a first reference electrode 8 and a second reference electrode 9 that are connected through electrical lines to voltmeters (not shown).
  • FIG. 4 is a schematic illustration of a deposition cell.
  • the anodes 5 are formed by an inert anode basket which is surrounded by a diaphragm (not shown herein) and holds the metal to be deposited, e.g., in the form of shot or pellets.
  • the anodes 5 are located outside tank 20 . They are coupled through conduits 29 that are coupled into tank 20 by way of shields 28 .
  • the shields 28 act as virtual anodes.
  • a first reference electrode 8 is disposed in proximity to the anodes 5 .
  • a second reference electrode 9 is likewise disposed in proximity to the cathode 1 .
  • the electric voltages between the cathode 1 and the second reference electrode 9 , between the second reference electrode 9 and the first reference electrode 8 and between the first reference electrode 8 and the anodes 5 are measured using the voltmeters 16 , 15 , 14 , respectively.
  • the tank 20 is completely filled with electrolyte fluid 22 .
  • a voltage of about 0.5 V that was stable over time was measured using the voltmeter 16 .
  • the voltage between the two reference electrodes 8 , 9 as measured by voltmeter 15 was 1 V and stable over time.
  • the voltage between the first reference electrode 8 and the anode 5 was approximately 18.5 V and varied in time with the overall voltage.
  • an electrolytic copper bath 22 was used to deposit a copper layer on a semiconductor wafer 1 .
  • the wafer 1 was provided with a copper seed layer which was aproximately 100 nm thick.
  • the copper seed layer was coated with a photoresist layer having vias and trenches exposing the copper seed layer.
  • the copper bath 22 contained copper sulfate, sulfuric acid and a minor amount of sodium chloride as well as generic additive components that are usually used to optimize physico-mechanical properties.
  • the bath 22 was operated in a deposition tank 20 with a design of the tank as shown in FIG. 4 .
  • the anode 5 was insoluble, being made from an expanded metal sheet of titanium, which was activated with noble metal (e.g. platinum).
  • Electroplating was effected by an electrolytic current flowing between the wafer 1 and the anode 5 .
  • Safe initiation of copper deposition could easily be determined by measuring the voltage between the wafer 1 and the reference electrode 9 over time in order to ascertain whether safe wetting of the wafer 1 occurred and whether a sufficiently thick copper seed layer was still present at the surface of the wafer 1 . If the voltage was not determined to be in the value range expected, deficient electroplating was expected.
  • the voltage between the wafer 1 and the reference electrode 9 was measured. Practicing this measurement during the entire electroplating process a defined potential control of the wafer 1 was achieved. This also guaranteed process safety during the entire copper plating process including the method steps of immersion and wetting of the wafer 1 . It turned out that seed layer etching could be prevented if a suitable voltage was applied to the wafer 1 . Under these conditions the wetting period of the wafer 1 could be optimized, i.e. extended.
  • processing was also found to be influenced by imponderable conditions at the anode 5 . It turned out that too high a plating rate would lead to a material transport in the plating bath 22 being rate determining (reaction of Fe(II) to Fe(III)). This could lead to water electrolysis and hence generation of oxygen gas bubbles at the anode 5 .
  • the anode potential was measured to shift. Under unfavourable conditions this shift was detected by measuring the voltage between the anode 5 and the reference electrode 8 . Therefore by ascertaining a voltage which was outside the normal range the processing parameters could be suitably adjusted in order to prevent deficient processing.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Automation & Control Theory (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
US10/518,100 2002-07-12 2003-07-02 Device and method for monitoring an electrolytic process Abandoned US20050173250A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10232612A DE10232612B4 (de) 2002-07-12 2002-07-12 Vorrichtung und Verfahren zur Überwachung eines elektrolytischen Prozesses
DE10232612.6 2002-07-12
PCT/EP2003/007051 WO2004007811A2 (en) 2002-07-12 2003-07-02 Device and method for monitoring an electrolytic process

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EP (1) EP1521868B1 (zh)
JP (1) JP4221365B2 (zh)
CN (1) CN100346007C (zh)
AT (1) ATE407236T1 (zh)
AU (1) AU2003249927A1 (zh)
DE (2) DE10232612B4 (zh)
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US20130084656A1 (en) * 2011-09-29 2013-04-04 Renesas Electronics Corporation Method for manufacturing a semiconductor device
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US20170089855A1 (en) * 2014-02-14 2017-03-30 Universite Du Quebec A Chicoutimi A method for analyzing an anode and device thereof
US20240044039A1 (en) * 2013-07-02 2024-02-08 Ancosys Gmbh In-situ fingerprinting for electrochemical deposition and/or electrochemical etching

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US20140367264A1 (en) * 2013-06-18 2014-12-18 Applied Materials, Inc. Automatic in-situ control of an electro-plating processor
JP5826952B2 (ja) * 2014-01-17 2015-12-02 株式会社荏原製作所 めっき方法およびめっき装置
CN109518244A (zh) * 2018-12-27 2019-03-26 中国电子科技集团公司第二研究所 可削弱镀层边缘效应的晶圆镀铜工艺
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JP7108801B1 (ja) * 2022-03-01 2022-07-28 株式会社荏原製作所 めっき装置

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EP1521868A2 (en) 2005-04-13
ATE407236T1 (de) 2008-09-15
CN100346007C (zh) 2007-10-31
AU2003249927A8 (en) 2004-02-02
DE10232612B4 (de) 2006-05-18
CN1668785A (zh) 2005-09-14
JP4221365B2 (ja) 2009-02-12
TW200415257A (en) 2004-08-16
EP1521868B1 (en) 2008-09-03
DE60323375D1 (de) 2008-10-16
JP2005536633A (ja) 2005-12-02
DE10232612A1 (de) 2004-02-05

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