US20050031483A1 - [solder composition] - Google Patents
[solder composition] Download PDFInfo
- Publication number
- US20050031483A1 US20050031483A1 US10/709,990 US70999004A US2005031483A1 US 20050031483 A1 US20050031483 A1 US 20050031483A1 US 70999004 A US70999004 A US 70999004A US 2005031483 A1 US2005031483 A1 US 2005031483A1
- Authority
- US
- United States
- Prior art keywords
- solder composition
- amount
- mixture
- component selected
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 113
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 90
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- 239000011651 chromium Substances 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- 239000011572 manganese Substances 0.000 claims description 18
- 229910052804 chromium Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 230000000737 periodic effect Effects 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 20
- 239000007769 metal material Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 14
- 229910045601 alloy Inorganic materials 0.000 abstract description 8
- 239000000956 alloy Substances 0.000 abstract description 8
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 229910019192 Sn—Cr Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- -1 stibium (Sb) Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910008839 Sn—Ti Inorganic materials 0.000 description 1
- WGLNLIPRLXSIEL-UHFFFAOYSA-N [Sn].[Cr] Chemical compound [Sn].[Cr] WGLNLIPRLXSIEL-UHFFFAOYSA-N 0.000 description 1
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004137 mechanical activation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C18/00—Alloys based on zinc
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/264—Bi as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/282—Zn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/32—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
Definitions
- the present invention generally relates to a solder composition. More particularly, the present invention relates to a solder composition adapted to bond various materials.
- Solder is a metal composition used for mechanically bonding two same metallic materials or two different metallic materials under low temperature. Soldering technique has advantages of high conductivity, high thermal diffusivity and high bonding reliability so that it has been widely used in the assembly of semiconductors and electronic components packaging as well.
- the solder is composed of tin (Sn) and other metal to form a binary alloy such as Sn—Pb alloy, Sn—Ag alloy, Sn—In alloy or Sn—Ag—Cu alloy.
- Sn tin
- Sn—Pb alloy Sn—Ag alloy
- Sn—In alloy Sn—Ag—Cu alloy.
- solderable metal articles such as Sn—Pb alloy, Sn—Ag alloy, Sn—In alloy or Sn—Ag—Cu alloy.
- the metal pad layer usually includes an adhesive layer such as Ti or Cr and a solderable metal layer such as Cu or Ni.
- a conventional method is adding titanium (Ti) into the solder to form an active solder.
- This active solder has higher bonding strength for non-metallic materials or non-solderable materials.
- the surface of this active solder is very easy to oxidize and generate oxidation dross, and thus has poor printability.
- additional mechanical activation steps such as brushing step, vibration step and ultrasonic pressure step are needed to improve printability and reactivity. Since this bonding process needs several additional steps, the cost of this bonding process is high.
- the present invention is directed to a solder composition adapted to bond metallic materials and non-metallic materials.
- the solder composition can enhance the bonding strength for various metallic materials and non-metallic materials.
- a solder composition comprises chromium (Cr) in an amount of 5 ⁇ 20 wt. %; a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity.
- the solder composition further comprises another component selected from a IVB group in the periodic table or a mixture thereof having an amount of 0.01 ⁇ 10 wt. %
- the solder composition further comprises another component selected from a VB group in the periodic table or a mixture thereof having an amount of 0.01 ⁇ 10 wt. %
- the solder composition further comprises another component selected from a IIIB group in the periodic table or a mixture thereof in an amount of 0.01 ⁇ 20 wt. %.
- the metal selected from the IIIB group or a mixture thereof at least comprises cerium (Ce), samarium (Sm), neodymium (Nd), lutetium (Lu) or a mixture thereof.
- the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01 ⁇ 10 wt. %.
- the solder composition further comprises stibium (Sb) having an amount of 0.01 ⁇ 50 wt. %.
- the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01 ⁇ 5 wt. %.
- the solder composition further comprises gallium (Ga) in an amount of 0.01 ⁇ 10 wt. %.
- the present invention also provides a solder composition
- a solder composition comprising chromium (Cr) in an amount of 0.01 ⁇ 5 wt. %; a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity
- the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01 ⁇ 10 wt. %
- the solder composition further comprises stibium (Sb) in an amount of 0.01 ⁇ 50 wt. %.
- the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01 ⁇ 5 wt. %.
- the solder composition further comprises gallium (Ga) having an amount of 0.01 ⁇ 10 wt. %.
- the main component of the solder composition of the present invention is chromium (Cr) that has higher affinity with oxygen. Chromium (Cr) can easily combine oxygen of oxide layer on glass, metal or semiconductor materials so as to enhance the wettability of the boned materials. It also can reduce surface energy between the solder composition and the bonded materials at melting state.
- IIIB group, VB group, IVB group and other metal component such as silver (Ag), copper (Cu), stibium (Sb), nickel (Ni), cobalt (Co), manganese (Mn) and gallium (Ga) can be further added into the solder composition to regulate the solder composition property such as bonding strength and melting point.
- the solder composition can provide good printability, wide use, simple bonding process and high bonding strength for different materials.
- a first solder composition comprises chromium (Cr) in an amount of 5 ⁇ 20 wt. %; a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity that can not be avoided.
- the solder composition further comprises another component selected from the IVB group in the periodic table or a mixture thereof having an amount of 0.01 ⁇ 10 wt. %. In another embodiment, the solder composition further comprises another component selected from the VB group in the periodic table or a mixture thereof having an amount of 0.01 ⁇ 10 wt. %. In another embodiment, the solder composition further comprises another component selected from the IIIB group in the periodic table or a mixture thereof in an amount of 0.01 ⁇ 20 wt. %.
- the metal selected from the IIIB group or a mixture thereof at least comprises cerium (Ce), samarium (Sm), neodymium (Nd), lutetium (Lu) or a mixture thereof.
- the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01 ⁇ 10 wt. %. In another embodiment, the solder composition further comprises stibium (Sb) in an amount of 0.01 ⁇ 50 wt. %. In another embodiment, the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01 ⁇ 5 wt. %. In another embodiment, the solder composition further comprises gallium (Ga) in an amount of 0.01 ⁇ 10 wt. %.
- a second solder composition comprises chromium (Cr) in an amount of 0.01 ⁇ 5 wt. %; a component selected a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity that can not be avoided.
- the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01 ⁇ 10 wt. %. In another embodiment, the solder composition further comprises stibium (Sb) in an amount of 0.01 ⁇ 50 wt. %. In another embodiment, the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01 ⁇ 5 wt. %. In another embodiment, the solder composition further comprises gallium (Ga) in an amount of 0.01 ⁇ 10 wt. %.
- the bonding temperature of the solder composition is about between 100 ⁇ 550° C., for example. If the solder composition mainly contains Zn—Cr alloy, the bonding temperature thereof is about between 400 ⁇ 700° C., for example, and can be suitable for high temperature bonding process.
- chromium (Cr) atoms in the solder composition When the solder composition is heated at melting state, chromium (Cr) atoms in the solder composition have an affinity with oxygen. These chromium (Cr) atoms collect at the surface of the solder and react with oxide or oxide layer on the bonded materials. Other metal atoms in the solder composition also join the reaction so that the surface energy between the solder composition and the bonded materials is changed.
- silver (Ag) in the solder composition can reduce surface tension and bonding temperature of the solder composition at its melting state and can enhance bonding strength after bonding.
- Copper (Cu) in the solder composition can enhance wettability especially for bonded materials containing iron. Copper (Cu) can also enhance bonding strength after bonding.
- Gallium (Ga) in the solder composition is contributive to clean oxide layer on the bonded materials and can reduce the bonding temperature.
- Stibium (Sb), nickel (Ni), cobalt (Co) or manganese (Mn) in the solder composition not only regulates the bonding temperature, but also enhances wettability of the solder composition and can enhance bonding strength after bonding.
- the solder composition can bond metallic materials, non-metallic materials, oxygen-containing ceramic materials, ceramic materials free of oxygen or polymer materials, for example.
- the metallic materials include, for example, aluminium (Al), copper (Cu), iron (Fe), stainless steel, nickel (Ni) and alloy-phosphorous alloy (Ni-Px).
- the non-metallic materials include, for example, nitride, silicon (Si), glass and semiconductor material of IIIB group, IVB group or VB group in the periodic table.
- solder composition of the invention conventional titanium (Ti) is replaced with chromium (Cr) as an active component so that metal element of IIIB group in the periodic table is not necessary to protect the active component from contacting with oxygen in the air.
- the solder composition can be used to bond materials in oxygen-exiting conditions. Vacuum condition or other special condition is not needed so that process of bonding material through the solder composition is simplified. In other words, when performing the bonding process, only simple steps are needed.
- the solder composition mainly comprises tin-chromium (Sn—Cr) alloy, and other metal such as silver (Ag), copper (Cu), stibium (Sb), nickel (Ni), cobalt (Co), manganese (Mn), gallium (Ga) or a mixture thereof that is for regulating the solder property can further be added, so that the solder composition can be used to bond various materials.
- solder composition can provide good printability, smooth surfaces and not easy to be oxidized.
- the solder composition can also provide low bonding temperature, high bonding strength and wide use.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
A solder composition adapted to bond metallic materials and non-metallic materials is provided. The solder composition can enhance the bonding strength for the metallic materials and the non-metallic materials. The solder composition mainly comprises Sn—Cr alloy. The solder composition further includes anther metal component for regulating the bonding capability so that the solder composition can be used to bond various materials.
Description
- This application claims the priority benefit of Taiwan application serial no. 92121256, filed Aug. 4, 2003.
- 1. Field of the Invention
- The present invention generally relates to a solder composition. More particularly, the present invention relates to a solder composition adapted to bond various materials.
- 2. Description of Related Art
- Solder is a metal composition used for mechanically bonding two same metallic materials or two different metallic materials under low temperature. Soldering technique has advantages of high conductivity, high thermal diffusivity and high bonding reliability so that it has been widely used in the assembly of semiconductors and electronic components packaging as well.
- Conventionally, the solder is composed of tin (Sn) and other metal to form a binary alloy such as Sn—Pb alloy, Sn—Ag alloy, Sn—In alloy or Sn—Ag—Cu alloy. These solders have been widely used to bond solderable metal articles. However, when bonding non-solderable materials or non-metallic materials, a metal pad layer must be first formed on these materials. The metal pad layer usually includes an adhesive layer such as Ti or Cr and a solderable metal layer such as Cu or Ni.
- In currently semiconductor processes, bonding silicon wafer, glass, silicon nitride film, silicon oxide film or heat diffusion material is usually performed. It is noted that during reflowing, a flux is usually required for cleaning oxide layer on surfaces of the solder and enhancing the wettability of the bonded materials. However, flux residues and voids that are formed on the solder after removing the oxide layer may result in low bonding strength.
- In order to resolve the foregoing problem, a conventional method is adding titanium (Ti) into the solder to form an active solder. This active solder has higher bonding strength for non-metallic materials or non-solderable materials. However, the surface of this active solder is very easy to oxidize and generate oxidation dross, and thus has poor printability. Moreover, when using this active solder for performing bonding process, additional mechanical activation steps such as brushing step, vibration step and ultrasonic pressure step are needed to improve printability and reactivity. Since this bonding process needs several additional steps, the cost of this bonding process is high.
- Accordingly, the present invention is directed to a solder composition adapted to bond metallic materials and non-metallic materials. The solder composition can enhance the bonding strength for various metallic materials and non-metallic materials.
- According to an embodiment of the present invention, a solder composition is provided. The solder composition comprises chromium (Cr) in an amount of 5˜20 wt. %; a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity.
- According to another embodiment of the present invention, the solder composition further comprises another component selected from a IVB group in the periodic table or a mixture thereof having an amount of 0.01˜10 wt. %
- According to another embodiment of the present invention, the solder composition further comprises another component selected from a VB group in the periodic table or a mixture thereof having an amount of 0.01˜10 wt. %
- According to another embodiment of the present invention, the solder composition further comprises another component selected from a IIIB group in the periodic table or a mixture thereof in an amount of 0.01˜20 wt. %. The metal selected from the IIIB group or a mixture thereof at least comprises cerium (Ce), samarium (Sm), neodymium (Nd), lutetium (Lu) or a mixture thereof.
- According to another embodiment of the present invention, the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01˜10 wt. %.
- According to another embodiment of the present invention, the solder composition further comprises stibium (Sb) having an amount of 0.01˜50 wt. %.
- According to another embodiment of the present invention, the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01˜5 wt. %.
- According to another embodiment of the present invention, the solder composition further comprises gallium (Ga) in an amount of 0.01˜10 wt. %.
- The present invention also provides a solder composition comprising chromium (Cr) in an amount of 0.01˜5 wt. %; a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity
- According to an embodiment of the present invention, the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01˜10 wt. %
- According to another embodiment of the present invention, the solder composition further comprises stibium (Sb) in an amount of 0.01˜50 wt. %.
- According to another embodiment of the present invention, the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01˜5 wt. %.
- According to another embodiment of the present invention, the solder composition further comprises gallium (Ga) having an amount of 0.01˜10 wt. %.
- The main component of the solder composition of the present invention is chromium (Cr) that has higher affinity with oxygen. Chromium (Cr) can easily combine oxygen of oxide layer on glass, metal or semiconductor materials so as to enhance the wettability of the boned materials. It also can reduce surface energy between the solder composition and the bonded materials at melting state. In addition, IIIB group, VB group, IVB group and other metal component such as silver (Ag), copper (Cu), stibium (Sb), nickel (Ni), cobalt (Co), manganese (Mn) and gallium (Ga) can be further added into the solder composition to regulate the solder composition property such as bonding strength and melting point. The solder composition can provide good printability, wide use, simple bonding process and high bonding strength for different materials.
- Both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
- First Embodiment
- Two solder compositions are described in the invention. According to a first embodiment, a first solder composition comprises chromium (Cr) in an amount of 5˜20 wt. %; a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity that can not be avoided.
- In a embodiment, the solder composition further comprises another component selected from the IVB group in the periodic table or a mixture thereof having an amount of 0.01˜10 wt. %. In another embodiment, the solder composition further comprises another component selected from the VB group in the periodic table or a mixture thereof having an amount of 0.01˜10 wt. %. In another embodiment, the solder composition further comprises another component selected from the IIIB group in the periodic table or a mixture thereof in an amount of 0.01˜20 wt. %. The metal selected from the IIIB group or a mixture thereof at least comprises cerium (Ce), samarium (Sm), neodymium (Nd), lutetium (Lu) or a mixture thereof. In another embodiment, the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01˜10 wt. %. In another embodiment, the solder composition further comprises stibium (Sb) in an amount of 0.01˜50 wt. %. In another embodiment, the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01˜5 wt. %. In another embodiment, the solder composition further comprises gallium (Ga) in an amount of 0.01˜10 wt. %.
- Second Embodiment
- According to a second embodiment, a second solder composition comprises chromium (Cr) in an amount of 0.01˜5 wt. %; a component selected a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and mixture thereof; and an impurity that can not be avoided.
- In an embodiment, the solder composition further comprises another component selected from silver (Ag), copper (Cu) or a mixture thereof in an amount of 0.01˜10 wt. %. In another embodiment, the solder composition further comprises stibium (Sb) in an amount of 0.01˜50 wt. %. In another embodiment, the solder composition further comprises another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01˜5 wt. %. In another embodiment, the solder composition further comprises gallium (Ga) in an amount of 0.01˜10 wt. %.
- The bonding temperature of the solder composition is about between 100˜550° C., for example. If the solder composition mainly contains Zn—Cr alloy, the bonding temperature thereof is about between 400˜700° C., for example, and can be suitable for high temperature bonding process.
- When the solder composition is heated at melting state, chromium (Cr) atoms in the solder composition have an affinity with oxygen. These chromium (Cr) atoms collect at the surface of the solder and react with oxide or oxide layer on the bonded materials. Other metal atoms in the solder composition also join the reaction so that the surface energy between the solder composition and the bonded materials is changed. In addition, silver (Ag) in the solder composition can reduce surface tension and bonding temperature of the solder composition at its melting state and can enhance bonding strength after bonding. Copper (Cu) in the solder composition can enhance wettability especially for bonded materials containing iron. Copper (Cu) can also enhance bonding strength after bonding. Gallium (Ga) in the solder composition is contributive to clean oxide layer on the bonded materials and can reduce the bonding temperature. Stibium (Sb), nickel (Ni), cobalt (Co) or manganese (Mn) in the solder composition not only regulates the bonding temperature, but also enhances wettability of the solder composition and can enhance bonding strength after bonding.
- No flux is needed when using the solder composition to bond materials. The solder composition can bond metallic materials, non-metallic materials, oxygen-containing ceramic materials, ceramic materials free of oxygen or polymer materials, for example. The metallic materials include, for example, aluminium (Al), copper (Cu), iron (Fe), stainless steel, nickel (Ni) and alloy-phosphorous alloy (Ni-Px). The non-metallic materials include, for example, nitride, silicon (Si), glass and semiconductor material of IIIB group, IVB group or VB group in the periodic table.
- In the solder composition of the invention, conventional titanium (Ti) is replaced with chromium (Cr) as an active component so that metal element of IIIB group in the periodic table is not necessary to protect the active component from contacting with oxygen in the air. The solder composition can be used to bond materials in oxygen-exiting conditions. Vacuum condition or other special condition is not needed so that process of bonding material through the solder composition is simplified. In other words, when performing the bonding process, only simple steps are needed.
- In an embodiment, the solder composition mainly comprises tin-chromium (Sn—Cr) alloy, and other metal such as silver (Ag), copper (Cu), stibium (Sb), nickel (Ni), cobalt (Co), manganese (Mn), gallium (Ga) or a mixture thereof that is for regulating the solder property can further be added, so that the solder composition can be used to bond various materials. Comparing with conventional tin-titanium (Sn—Ti) alloy, the solder composition can provide good printability, smooth surfaces and not easy to be oxidized. The solder composition can also provide low bonding temperature, high bonding strength and wide use.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (14)
1. A solder composition, comprising:
chromium (Cr) in an amount of 5˜20 wt. %;
a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and a mixture thereof; and
an impurity.
2. The solder composition according to claim 1 , further comprising another component selected from a IVB group in the periodic table or a mixture thereof in an amount of 0.01˜10 wt. %.
3. The solder composition according to claim 1 , further comprising another component selected from a VB group in the periodic table or a mixture thereof in an amount of 0.01˜10 wt. %.
4. The solder composition according to claim 1 , further comprising another component selected from a IIIB group in the periodic table or a mixture thereof in an amount of 0.01˜20 wt. %.
5. The solder composition according to claim 4 , wherein the component selected from the IIIB group in the periodic table or a mixture thereof at least comprises cerium (Ce), samarium (Sm), neodymium (Nd), lutetium (Lu) or a mixture thereof.
6. The solder composition according to claim 1 , further comprising another component selected from silver (Ag), copper (Cu) or a mixture thereof having an amount of 0.01˜10 wt. %.
7. The solder composition according to claim 1 , further comprising stibium (Sb) in an amount of 0.01˜50 wt. %.
8. The solder composition according to claim 1 , further comprising another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01˜5 wt. %.
9. The solder composition according to claim 1 , further comprising gallium (Ga) in an amount of 0.01˜10 wt. %.
10. A solder composition, comprising:
chromium (Cr) in an amount of 0.01˜5 wt. %;
a component selected from a group consisting of tin (Sn), zinc (Zn), bismuth (Bi), indium (In) and a mixture thereof; and
an impurity.
11. The solder composition according to claim 10 , further comprising another component selected from silver (Ag), copper (Cu) or a mixture thereof having an amount of 0.01˜10 wt. %.
12. The solder composition according to claim 10 , further comprising stibium (Sb) in an amount of 0.01˜50 wt. %.
13. The solder composition according to claim 10 , further comprising another component selected from nickel (Ni), cobalt (Co), manganese (Mn) or a mixture thereof in an amount of 0.01˜5 wt. %.
14. The solder composition according to claim 10 , further comprising gallium (Ga) in an amount of 0.01˜10 wt. %.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92121256 | 2003-08-04 | ||
| TW092121256A TWI222910B (en) | 2003-08-04 | 2003-08-04 | Constituents of solder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20050031483A1 true US20050031483A1 (en) | 2005-02-10 |
Family
ID=34114669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/709,990 Abandoned US20050031483A1 (en) | 2003-08-04 | 2004-06-11 | [solder composition] |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050031483A1 (en) |
| TW (1) | TWI222910B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050100474A1 (en) * | 2003-11-06 | 2005-05-12 | Benlih Huang | Anti-tombstoning lead free alloys for surface mount reflow soldering |
| US20070048172A1 (en) * | 2005-08-30 | 2007-03-01 | Indium Corporation Of America | Technique for increasing the compliance of tin-indium solders |
| US20070071634A1 (en) * | 2005-09-26 | 2007-03-29 | Indium Corporation Of America | Low melting temperature compliant solders |
| US20100084765A1 (en) * | 2008-10-02 | 2010-04-08 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor package having bump ball |
| WO2012106434A1 (en) * | 2011-02-04 | 2012-08-09 | Antaya Technologies Corporation | Lead-free solder composition |
| US8673762B2 (en) | 2011-01-31 | 2014-03-18 | Fujitsu Limited | Solder, soldering method, and semiconductor device |
| US20140290931A1 (en) * | 2013-04-01 | 2014-10-02 | University Of Maryland, College Park | High Temperature Solder For Downhole Components |
| CN107627044A (en) * | 2017-10-25 | 2018-01-26 | 吉林大学 | The polynary zinc-tin copper bismuth neodymium solder and its preparation technology of a kind of soldering sintered NdFeB and steel |
| US10040349B2 (en) * | 2015-10-13 | 2018-08-07 | Consumer Safety Technology, Llc | Networked intoxication vehicle immobilization |
| CN109055844A (en) * | 2018-08-20 | 2018-12-21 | 黄河科技学院 | A kind of long-life low-melting point metal alloy Heat Conduction Material and preparation method thereof |
| US10180035B2 (en) | 2013-04-01 | 2019-01-15 | Schlumberger Technology Corporation | Soldered components for downhole use |
| US12311759B1 (en) | 2022-02-02 | 2025-05-27 | Consumer Safety Technology, Llc | Wireless vehicle interface for immobilization system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201244679A (en) * | 2011-05-13 | 2012-11-16 | Long-Quan Cao | Multilayer composite alloy cookware |
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|---|---|---|---|---|
| US4009027A (en) * | 1974-11-21 | 1977-02-22 | Jury Vladimirovich Naidich | Alloy for metallization and brazing of abrasive materials |
-
2003
- 2003-08-04 TW TW092121256A patent/TWI222910B/en not_active IP Right Cessation
-
2004
- 2004-06-11 US US10/709,990 patent/US20050031483A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4009027A (en) * | 1974-11-21 | 1977-02-22 | Jury Vladimirovich Naidich | Alloy for metallization and brazing of abrasive materials |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050100474A1 (en) * | 2003-11-06 | 2005-05-12 | Benlih Huang | Anti-tombstoning lead free alloys for surface mount reflow soldering |
| US20070048172A1 (en) * | 2005-08-30 | 2007-03-01 | Indium Corporation Of America | Technique for increasing the compliance of tin-indium solders |
| US7749336B2 (en) * | 2005-08-30 | 2010-07-06 | Indium Corporation Of America | Technique for increasing the compliance of tin-indium solders |
| US20070071634A1 (en) * | 2005-09-26 | 2007-03-29 | Indium Corporation Of America | Low melting temperature compliant solders |
| US20100084765A1 (en) * | 2008-10-02 | 2010-04-08 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor package having bump ball |
| US8673762B2 (en) | 2011-01-31 | 2014-03-18 | Fujitsu Limited | Solder, soldering method, and semiconductor device |
| EP2990155A1 (en) * | 2011-02-04 | 2016-03-02 | Antaya Technologies Corporation | Lead-free solder composition |
| CN103476539A (en) * | 2011-02-04 | 2013-12-25 | 安塔亚技术公司 | Lead-free solder composition |
| US8771592B2 (en) | 2011-02-04 | 2014-07-08 | Antaya Technologies Corp. | Lead-free solder composition |
| WO2012106434A1 (en) * | 2011-02-04 | 2012-08-09 | Antaya Technologies Corporation | Lead-free solder composition |
| US9975207B2 (en) | 2011-02-04 | 2018-05-22 | Antaya Technologies Corporation | Lead-free solder composition |
| US20140290931A1 (en) * | 2013-04-01 | 2014-10-02 | University Of Maryland, College Park | High Temperature Solder For Downhole Components |
| US10180035B2 (en) | 2013-04-01 | 2019-01-15 | Schlumberger Technology Corporation | Soldered components for downhole use |
| US10040349B2 (en) * | 2015-10-13 | 2018-08-07 | Consumer Safety Technology, Llc | Networked intoxication vehicle immobilization |
| US10596903B2 (en) | 2015-10-13 | 2020-03-24 | Consumer Safety Technology, Llc | Networked intoxication vehicle immobilization |
| US10604011B2 (en) | 2015-10-13 | 2020-03-31 | Consumer Safety Technology, Llc | Networked intoxication vehicle immobilization |
| US10919389B2 (en) | 2015-10-13 | 2021-02-16 | Consumer Safety Technology, Llc | Networked vehicle immobilization |
| US11338675B2 (en) | 2015-10-13 | 2022-05-24 | Consumer Safety Technology, Llc | Networked intoxication vehicle immobilization |
| US12054044B2 (en) | 2015-10-13 | 2024-08-06 | Consumer Safety Technology, Llc | Networked intoxication vehicle immobilization |
| CN107627044A (en) * | 2017-10-25 | 2018-01-26 | 吉林大学 | The polynary zinc-tin copper bismuth neodymium solder and its preparation technology of a kind of soldering sintered NdFeB and steel |
| CN109055844A (en) * | 2018-08-20 | 2018-12-21 | 黄河科技学院 | A kind of long-life low-melting point metal alloy Heat Conduction Material and preparation method thereof |
| US12311759B1 (en) | 2022-02-02 | 2025-05-27 | Consumer Safety Technology, Llc | Wireless vehicle interface for immobilization system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200505619A (en) | 2005-02-16 |
| TWI222910B (en) | 2004-11-01 |
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