US20040124433A1 - Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound - Google Patents
Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound Download PDFInfo
- Publication number
- US20040124433A1 US20040124433A1 US10/623,229 US62322903A US2004124433A1 US 20040124433 A1 US20040124433 A1 US 20040124433A1 US 62322903 A US62322903 A US 62322903A US 2004124433 A1 US2004124433 A1 US 2004124433A1
- Authority
- US
- United States
- Prior art keywords
- light emitting
- emitting device
- device package
- molding compound
- fabricating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title abstract description 15
- 239000011812 mixed powder Substances 0.000 title description 2
- 239000000126 substance Substances 0.000 claims abstract description 24
- 238000000465 moulding Methods 0.000 claims abstract description 18
- 239000004593 Epoxy Substances 0.000 claims abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 16
- 239000008188 pellet Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000007787 solid Substances 0.000 claims abstract description 10
- 239000008240 homogeneous mixture Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 238000005453 pelletization Methods 0.000 claims description 6
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 3
- 239000011707 mineral Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002671 adjuvant Substances 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000002223 garnet Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims 8
- 238000003825 pressing Methods 0.000 claims 4
- 230000008021 deposition Effects 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 3
- 239000000049 pigment Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Definitions
- the present invention relates to processes for preparing compositions used in the fabrication of light emitting semiconductor devices, and also relates to the devices resulting from the use of said process.
- LEDs are used in a variety of applications, such as displays, illumination in control panels, in traffic lights and electronic devices.
- An LED is a semiconductor device that converts electrical energy into optical energy. This occurs when a forward bias is applied to the device, resulting in holes in the P-type semiconductor material combining with the electrons in the N-type semiconductor material at the P-N junction.
- a “white” light emitting diode uses a blue light emitting diode as the source of the light.
- a luminous material layered over the blue light emitting diode acts to partly absorb the blue light and convert it into yellow or yellowish green light. When mixed, the blue and yellow/yellowish green light combine as white light.
- a conventional method of producing white light emitting devices includes a process in which yttrium aluminate (“YAG”) is directly deposited onto a light emitting diode (“LED”) chip surface in order to produce LEDs that emit white light.
- YAG yttrium aluminate
- LED light emitting diode
- a disadvantage of said process, and the resulting LED is that the color temperature from such a white LED is not uniform over a plurality of angular positions due to the non-uniform thickness of the YAG over the LED chip surface. Further, this unequal distribution of color temperature occurs on a device by device basis within the same lot.
- the present invention comprises a process of mixing a luminous substance in powder form to a transferable grade molding compound in a pelletized or powder form, such as a clear epoxy, to derive a homogeneous mixture that can be pressed and sintered into solid pellets.
- the solid pellets are further processed so as to permit their deposition on and around a light emitting semiconductor driver so as to obtain a “white” light emitting semiconductor device.
- This “white” light emitting device can be used in a variety of lighting applications.
- the present invention discloses a process for adding a luminous substance in powder form to a transferable grade molding compound in pellet or powder form to derive a homogeneous mixture that can be pressed and sintered into pellets so as to obtain a “white” light emitting semiconductor device.
- the luminous powdered substance is a Cerium doped garnet, such as the inorganic luminous substance YAG:Ce.
- YAG:Ce is homogeneously admixed with a pelletized molding compound, such as a clear epoxy.
- a pelletized molding compound such as a clear epoxy.
- YAG:Ce has an index of refraction of about 1.84, resulting in good mixing of blue diode emissions with yellow/yellowish green converter radiation, any type of luminous substance in powder form can be used in the disclosed process.
- Other luminous substance powders that can be homogenously distributed within the molding compound include but are not limited to other garnets doped with rare earths.
- the particle sizes of the luminous powdered substances are less than or equal to 5 microns and can be spherical or flake-like in shape. Different chromaticity can be obtained by adjusting the luminous powder's (i) percentage by weight of the combined material and (ii) micron size, before admixing and pelletizing. Because of the characteristics of the mixture, no sedimentation of the substance occurs and the mixture remains homogeneous. The powder and pellets must be stored in Nitrogen before and during production as they are susceptible to moisture. Because the luminous powder added to the epoxy changes its spiral flow, the transfer pressure must be increased 10% to 15% of manufacturer's recommended settings. As used with the Microsemi(r) PM3 package, a “color tunable” device can be produced. The disclosed process can also be used to convert the wavelength of blue, green or ultra-violet light of LEDs to other wavelengths.
- the disclosed process By providing uniformity in concentration by weight and homogeneous disposition of the luminous substance within the molding compound, uniform distribution of color temperature can be achieved.
- use of the disclosed process allows a more robust injection molded package. This is accomplished by depositing the admixed substance around the LED chip atop a copper lead frame Specifically, pellets are taken from a freezer and stored in Nitrogen until they reached room temperature. They are then removed from the Nitrogen box and placed in a feed bowl to be loaded into a mold shuttle for transfer. The feed bowl and mold shuttle are purged with nitrogen to keep the pellets dry. The use of this process advantageously results in no UV bleed through at elevated drive current.
- the powder/pelletized composition includes, among other things, the following parts:
- thixotorpic agent such as pyrogenic silicic acid
- hydrophobic agent such as liquid silicone wax to modify the pigment surface
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The present invention comprises a process of mixing a luminous substance in powder form to a transferable grade molding compound in a pelletized or powder form, such as a clear epoxy, to derive a homogeneous mixture that can be pressed and sintered into solid pellets. The solid pellets are further processed so as to permit their deposition on and around a light emitting semiconductor driver so as to obtain a white light emitting semiconductor device. This white light emitting device can be used in a variety of lighting applications.
Description
- This application is related to U.S. provisional patent application No. 60/397,082, filed Jul. 19, 2002, entitled PROCESS FOR PREPARING, AND DEVICE RESULTING FROM, A HOMOGENOUSLY MIXED POWDER/PELLETIZED COMPOUND FOR USE IN LIGHT EMITTING SEMICONDUCTOR DEVICES, the entire contents of which are incorporated herein by this reference. The Applicants hereby claim the benefits of this earlier pending provisional application under 35 U.S.C. Section 119(e).
- The present invention relates to processes for preparing compositions used in the fabrication of light emitting semiconductor devices, and also relates to the devices resulting from the use of said process.
- LEDs are used in a variety of applications, such as displays, illumination in control panels, in traffic lights and electronic devices. An LED is a semiconductor device that converts electrical energy into optical energy. This occurs when a forward bias is applied to the device, resulting in holes in the P-type semiconductor material combining with the electrons in the N-type semiconductor material at the P-N junction. A “white” light emitting diode uses a blue light emitting diode as the source of the light. A luminous material layered over the blue light emitting diode acts to partly absorb the blue light and convert it into yellow or yellowish green light. When mixed, the blue and yellow/yellowish green light combine as white light.
- A conventional method of producing white light emitting devices includes a process in which yttrium aluminate (“YAG”) is directly deposited onto a light emitting diode (“LED”) chip surface in order to produce LEDs that emit white light. However, a disadvantage of said process, and the resulting LED, is that the color temperature from such a white LED is not uniform over a plurality of angular positions due to the non-uniform thickness of the YAG over the LED chip surface. Further, this unequal distribution of color temperature occurs on a device by device basis within the same lot.
- In addition, at elevated drive current, bleed-through of radiation in the ultra-violet (“UV”) range can occur. The use of the conventional process in producing these “white” light emitting devices disadvantageously results in package complexity, leading to limited ruggedness and decreased reliability of the devices.
- The present invention comprises a process of mixing a luminous substance in powder form to a transferable grade molding compound in a pelletized or powder form, such as a clear epoxy, to derive a homogeneous mixture that can be pressed and sintered into solid pellets. The solid pellets are further processed so as to permit their deposition on and around a light emitting semiconductor driver so as to obtain a “white” light emitting semiconductor device. This “white” light emitting device can be used in a variety of lighting applications.
- The present invention discloses a process for adding a luminous substance in powder form to a transferable grade molding compound in pellet or powder form to derive a homogeneous mixture that can be pressed and sintered into pellets so as to obtain a “white” light emitting semiconductor device.
- In an embodiment of the invention, the luminous powdered substance is a Cerium doped garnet, such as the inorganic luminous substance YAG:Ce. In this embodiment, YAG:Ce is homogeneously admixed with a pelletized molding compound, such as a clear epoxy. Although YAG:Ce has an index of refraction of about 1.84, resulting in good mixing of blue diode emissions with yellow/yellowish green converter radiation, any type of luminous substance in powder form can be used in the disclosed process. Other luminous substance powders that can be homogenously distributed within the molding compound include but are not limited to other garnets doped with rare earths.
- The particle sizes of the luminous powdered substances are less than or equal to 5 microns and can be spherical or flake-like in shape. Different chromaticity can be obtained by adjusting the luminous powder's (i) percentage by weight of the combined material and (ii) micron size, before admixing and pelletizing. Because of the characteristics of the mixture, no sedimentation of the substance occurs and the mixture remains homogeneous. The powder and pellets must be stored in Nitrogen before and during production as they are susceptible to moisture. Because the luminous powder added to the epoxy changes its spiral flow, the transfer pressure must be increased 10% to 15% of manufacturer's recommended settings. As used with the Microsemi(r) PM3 package, a “color tunable” device can be produced. The disclosed process can also be used to convert the wavelength of blue, green or ultra-violet light of LEDs to other wavelengths.
- By providing uniformity in concentration by weight and homogeneous disposition of the luminous substance within the molding compound, uniform distribution of color temperature can be achieved. Using the disclosed process to control the percentage weight of the luminous substance, such as YAG, to the molding compound, such as a clear epoxy, ensures uniform distribution of color temperature. Furthermore, use of the disclosed process allows a more robust injection molded package. This is accomplished by depositing the admixed substance around the LED chip atop a copper lead frame Specifically, pellets are taken from a freezer and stored in Nitrogen until they reached room temperature. They are then removed from the Nitrogen box and placed in a feed bowl to be loaded into a mold shuttle for transfer. The feed bowl and mold shuttle are purged with nitrogen to keep the pellets dry. The use of this process advantageously results in no UV bleed through at elevated drive current.
- More specifically, the powder/pelletized composition includes, among other things, the following parts:
- (a) molding compound, such as a clear epoxy;
- (b) luminous substances, such as YAG:Ce;
- (c) thixotorpic agent, such as pyrogenic silicic acid, to thicken the epoxy casting resin;
- (d) mineral diffuser, such as CaF2, for optimizing the luminous pattern of the composition;
- (e) processing adjuvant, such as glycol ether or surface modifiers based on silicone, to improve the compatibility between the epoxy and the luminous substance;
- (f) hydrophobic agent, such as liquid silicone wax to modify the pigment surface; and
- (g) adhesion promoters, to improve the adhesion between the pigments and the epoxy.
- The innovative teachings of the present invention are described with particular reference to the disclosed embodiment. However, it should be understood that the embodiment provides only one example of the many advantageous uses and innovative teachings herein. Various alterations, modifications and substitutions can be made to the disclosed invention without departing in any way from the spirit and scope of the invention.
Claims (23)
1. A light emitting device package, comprising:
a semiconductor junction operable to emit light when biased;
an homogenous composition deposited on the semiconductor junction adapted to filter and combine predetermined wavelengths of light from the semiconductor surface.
2. The light emitting device package of claim 1 , the homogenous composition further comprising a sintered and pelletized mixture of a molding compound and a luminous substance.
3. The light emitting device package of claim 2 , wherein the molding compound is in pelletized form prior to sintering and pelletization.
4. The light emitting device package of claim 3 , the pelletized molding compound further comprising a clear epoxy.
5. The light emitting device package of claim 2 , wherein the luminous substance is in powder form prior to sintering and pelletization.
6. The light emitting device package of claim 5 , wherein the luminous powder is less than or equal to 5 microns in size prior to sintering and pelletization.
7. The light emitting device package of claim 6 , wherein the luminous powder is spherical or flake-like in shape prior to sintering and pelletization.
8. The light emitting device package of claim 2 , the molding compound further comprising a clear epoxy.
9. The light emitting device package of claim 8 , the clear epoxy further incorporating a thixotorpic agent to thicken the epoxy casting resin.
10. The light emitting device package of claim 2 , the luminous substance further comprising a Cerium doped garnet.
11. The light emitting device package of claim 2 , the luminous substance further comprising YAG:Ce.
12. The light emitting device package of claim 2 , the luminous substance having admixed a predetermined amount of mineral diffuser so as to optimize the luminous pattern of the composition.
13. The light emitting device package of claim 12 , the mineral diffuser comprising CaF2.
14. The light emitting device package of claim 2 , the molding compound and luminous substance composition further including a processing adjuvant.
15. The light emitting device package of claim 2 , further comprising a predetermined chromaticity of light based on the luminous powder's percentage by weight of the composition and micron size, before admixing and pelletizing.
16. A method of fabricating a light emitting device, comprising:
admixing a luminous substance to a transferable grade molding compound to derive a homogeneous mixture;
pressing and sintering the homogeneous mixture into solid pellets;
processing the solid pellets for application on a semiconductor surface; and
depositing the processed solid pellets on the semiconductor surface.
17. The method of fabricating a light emitting device of claim 16 wherein the molding compound is in a pelletized form prior to pressing and sintering the homogeneous mixture into solid pellets.
18. The method of fabricating a light emitting device of claim 16 wherein the pelletized molding compound further comprises a clear epoxy.
19. The method of fabricating a light emitting device of claim 16 wherein the molding compound is in a powdered form prior to pressing and sintering the homogeneous mixture into solid pellets.
20. The method of fabricating a light emitting device of claim 19 wherein the powdered molding compound further comprises a clear epoxy.
21. The method of fabricating a light emitting device of claim 16 wherein the luminous substance is in powdered form prior to pressing and sintering the homogeneous mixture into solid pellets.
22. The method of fabricating a light emitting device of claim 16 wherein the light emitted by the light emitting device comprises a white light.
23. A method of fabricating a light emitting chip comprising depositing an admixed substance of epoxy and a luminous substance around an LED chip located on a copper lead frame.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/623,229 US20040124433A1 (en) | 2002-07-19 | 2003-07-18 | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
| US11/079,323 US8269409B2 (en) | 2002-07-19 | 2005-03-14 | Method of fabricating a light-emitting device (LED) utilizing powder/pelletized homogeneously mixed molding compound |
| US11/415,001 US20060199292A1 (en) | 2002-07-19 | 2006-05-01 | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39708202P | 2002-07-19 | 2002-07-19 | |
| US10/623,229 US20040124433A1 (en) | 2002-07-19 | 2003-07-18 | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/079,323 Division US8269409B2 (en) | 2002-07-19 | 2005-03-14 | Method of fabricating a light-emitting device (LED) utilizing powder/pelletized homogeneously mixed molding compound |
| US11/415,001 Continuation US20060199292A1 (en) | 2002-07-19 | 2006-05-01 | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20040124433A1 true US20040124433A1 (en) | 2004-07-01 |
Family
ID=30770992
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/623,229 Abandoned US20040124433A1 (en) | 2002-07-19 | 2003-07-18 | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
| US11/079,323 Expired - Fee Related US8269409B2 (en) | 2002-07-19 | 2005-03-14 | Method of fabricating a light-emitting device (LED) utilizing powder/pelletized homogeneously mixed molding compound |
| US11/415,001 Abandoned US20060199292A1 (en) | 2002-07-19 | 2006-05-01 | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/079,323 Expired - Fee Related US8269409B2 (en) | 2002-07-19 | 2005-03-14 | Method of fabricating a light-emitting device (LED) utilizing powder/pelletized homogeneously mixed molding compound |
| US11/415,001 Abandoned US20060199292A1 (en) | 2002-07-19 | 2006-05-01 | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US20040124433A1 (en) |
| AU (1) | AU2003261181A1 (en) |
| WO (1) | WO2004010472A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006033057A1 (en) * | 2004-09-23 | 2006-03-30 | Koninklijke Philips Electronics N.V. | Light-emitting device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9296126B2 (en) | 2003-05-17 | 2016-03-29 | Microgreen Polymers, Inc. | Deep drawn microcellularly foamed polymeric containers made via solid-state gas impregnation thermoforming |
| US8877331B2 (en) | 2007-01-17 | 2014-11-04 | MicroGREEN Polymers | Multi-layered foamed polymeric objects having segmented and varying physical properties and related methods |
| US8080194B2 (en) | 2008-06-13 | 2011-12-20 | Microgreen Polymers, Inc. | Methods and pressure vessels for solid-state microcellular processing of thermoplastic rolls or sheets |
| US8827197B2 (en) | 2008-11-04 | 2014-09-09 | Microgreen Polymers Inc | Apparatus and method for interleaving polymeric roll for gas impregnation and solid-state foam processing |
| WO2011133568A1 (en) | 2010-04-19 | 2011-10-27 | Microgreen Polymers, Inc | A method for joining thermoplastic polymer material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU583423B2 (en) * | 1985-09-21 | 1989-04-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same |
| US4708839A (en) * | 1985-12-30 | 1987-11-24 | Amphenol Corporation | Method of compressively molding articles from resin coated filler materials |
| NL8802879A (en) * | 1988-11-22 | 1990-06-18 | Ireneus Johannes Theodorus Mar | METHOD FOR PACKING A CUSTOMIZED QUANTITY OF THERMO-CURING PLASTIC FOR COVERING A COMPONENT, PACKAGING OBTAINED WITH THIS METHOD, METHOD FOR OPERATING A MAT AND DIE FOR CARRYING OUT THIS PROCESS |
| US5369192A (en) * | 1993-06-28 | 1994-11-29 | Minnesota Mining And Manufacturing Company | Binder resin for resin transfer molding preforms |
| JPH08148280A (en) * | 1994-04-14 | 1996-06-07 | Toshiba Corp | Semiconductor device and manufacture therefor |
| TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
| US5958573A (en) * | 1997-02-10 | 1999-09-28 | Quantum Energy Technologies | Electroluminescent device having a structured particle electron conductor |
| US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
| WO1999008321A1 (en) * | 1997-08-07 | 1999-02-18 | Matsushita Electric Works, Ltd. | Epoxy resin sealing material for molding semiconductor chip and method for manufacturing the same |
| JP3877024B2 (en) * | 1998-04-13 | 2007-02-07 | 株式会社日立プラズマパテントライセンシング | Phosphor layer forming method and apparatus for plasma display panel, filamentary molded body used therefor, and method for producing the molded body |
| US6203911B1 (en) * | 1998-06-17 | 2001-03-20 | E. I. Du Pont De Nemours And Company | Thermoset volatile monomer molding compositions |
| DE19964252A1 (en) * | 1999-12-30 | 2002-06-06 | Osram Opto Semiconductors Gmbh | Surface mount component for an LED white light source |
| US6989412B2 (en) * | 2001-06-06 | 2006-01-24 | Henkel Corporation | Epoxy molding compounds containing phosphor and process for preparing such compositions |
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2003
- 2003-07-18 AU AU2003261181A patent/AU2003261181A1/en not_active Abandoned
- 2003-07-18 WO PCT/US2003/022389 patent/WO2004010472A2/en not_active Ceased
- 2003-07-18 US US10/623,229 patent/US20040124433A1/en not_active Abandoned
-
2005
- 2005-03-14 US US11/079,323 patent/US8269409B2/en not_active Expired - Fee Related
-
2006
- 2006-05-01 US US11/415,001 patent/US20060199292A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006033057A1 (en) * | 2004-09-23 | 2006-03-30 | Koninklijke Philips Electronics N.V. | Light-emitting device |
| US20080093976A1 (en) * | 2004-09-23 | 2008-04-24 | Koninklijke Philips Electronics, N.V. | Light-Emitting Device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060199292A1 (en) | 2006-09-07 |
| AU2003261181A1 (en) | 2004-02-09 |
| US20050158908A1 (en) | 2005-07-21 |
| WO2004010472A2 (en) | 2004-01-29 |
| US8269409B2 (en) | 2012-09-18 |
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| AS | Assignment |
Owner name: MICROSEMI CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KELLY, STEPHEN G.;REEL/FRAME:015054/0123 Effective date: 20040227 |
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| STCB | Information on status: application discontinuation |
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