[go: up one dir, main page]

US20040119513A1 - Charge pump architecture - Google Patents

Charge pump architecture Download PDF

Info

Publication number
US20040119513A1
US20040119513A1 US10/325,051 US32505102A US2004119513A1 US 20040119513 A1 US20040119513 A1 US 20040119513A1 US 32505102 A US32505102 A US 32505102A US 2004119513 A1 US2004119513 A1 US 2004119513A1
Authority
US
United States
Prior art keywords
transistor
charge pump
current
control signal
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10/325,051
Other versions
US6747506B1 (en
Inventor
Raman Thiara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US10/325,051 priority Critical patent/US6747506B1/en
Assigned to INTEL CORPORATION reassignment INTEL CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: THIARA, RAMAN S.
Application granted granted Critical
Publication of US6747506B1 publication Critical patent/US6747506B1/en
Publication of US20040119513A1 publication Critical patent/US20040119513A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00Automatic control of frequency or phase; Synchronisation
    • H03L7/06Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08Details of the phase-locked loop
    • H03L7/085Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
    • H03L7/089Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
    • H03L7/0891Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
    • H03L7/0895Details of the current generators
    • H03L7/0896Details of the current generators the current generators being controlled by differential up-down pulses

Definitions

  • Charge pumps are used to source current to or sink current from a load in response to control signals.
  • these control signals consist of an UP signal and a DOWN signal.
  • Current is sourced to the load in a case that the UP signal is active and the DOWN signal is inactive, and current is sunk from the load in a case that the UP signal is inactive and the DOWN signal is active.
  • no current flows through the load if both control signals are in the same state.
  • leakage current In a non-ideal charge pump, some current flows to or from the load if both control signals are in the same state. This current is known as leakage current. Leakage current may be reduced for a particular charge pump by tri-stating the output and/or increasing the output impedance of the charge pump.
  • a non-ideal charge pump also introduces delays into the system in which it is implemented.
  • many charge pumps employ switched current mirror structures. When a current is mirrored, the speed by which a current is switched through the mirror is limited by the device transit frequency of the transistors comprising the mirror. These delays may be significant in a case that the device transit frequency is similar to the phase detector comparison rate, which is the rate at which the charge pump control signals are updated.
  • phase detector comparison rate which is the rate at which the charge pump control signals are updated.
  • FIG. 1 illustrates a conventional differential charge pump that does not employ a current mirror.
  • Charge pump 1 includes p-channel metal-oxide semiconductor (PMOS) transistor 2 .
  • Transistor 2 receives voltage signal V CMFB from a common-mode feedback amplifier and generates a current which results in a stable common-mode voltage at the output of charge pump 1 .
  • V CMFB voltage signal from a common-mode feedback amplifier
  • a drain of transistor 2 is coupled to sources of PMOS transistor 3 and PMOS transistor 4 .
  • Drains of transistors 3 and 4 are respectively coupled to drains of n-channel metal-oxide semiconductor (NMOS) transistor 5 and NMOS transistor 6 , and source terminals of transistors 5 and 6 are coupled to one another and to current source I 1 .
  • NMOS n-channel metal-oxide semiconductor
  • These elements operate to generate differential output signal component OUT_N based on the differential charge pump control signals UP (composed of component signals UP and UPB) and DOWN (composed of DN and DNB).
  • Charge pump 1 uses a second set of the above-described elements to generate differential output signal component OUT_P. However, the components of the UP and DOWN differential control signals are applied to the second set of elements in a different arrangement.
  • Charge pump 1 therefore uses PMOS current switches stacked on NMOS current switches to steer the UP and DOWN signals to a load. These current switches require high output impedance because they are directly coupled to the output of charge pump 1 . This direct coupling also presents problems with signal feedthrough. Additionally, since the current switches are both PMOS and NMOS, charge pump 1 may require level shifting of the differential control signals. Level shifting may be required to allow for enough voltage dynamic range at the output of charge pump 1 . Yet another drawback of charge pump 1 is its use of local feedback, which complicates its design.
  • FIG. 1 is a diagram illustrating a conventional charge pump.
  • FIG. 2 is a diagram of a charge pump according to some embodiments.
  • FIG. 3 is a diagram of a charge pump according to some embodiments.
  • FIG. 4 is a diagram of a differential-output charge pump according to some embodiments.
  • FIG. 5 is a block diagram of a differential-output charge pump according to some embodiments.
  • FIG. 6 is a block diagram of a system according to some embodiments.
  • FIG. 2 illustrates charge pump 10 according to some embodiments.
  • the UP and DOWN control signals used to control charge pump 10 are differential control signals, each composed of two components (UP & UPB, DN & DNB) which together define a state of a respective differential control signal.
  • Charge pump 10 steers a current I so as to source or sink current I at output node OUT based on the control signals.
  • charge pump 10 includes only one output, charge pump 10 may be modified as described below to output a differential signal.
  • Charge pump 10 also includes current switches comprising NMOS transistors m 1 through m 4 . Each of transistors m 1 through m 4 receives a respective component of the differential control signals.
  • a source of transistor m 1 is coupled to a source of transistor m 2 and to current source I U .
  • a source of transistor m 3 is coupled to a source of transistor m 4 and to current source I D .
  • a drain of transistor m 1 is coupled to a source of PMOS transistor m 5 in a folded cascode arrangement.
  • a drain of transistor m 5 is in turn coupled to an output of NMOS current mirror 15 and to output node OUT.
  • a drain of transistor m 3 is also coupled in a folded cascode arrangement to a source of PMOS transistor m 6 , and a drain of transistor m 6 is coupled to an input of current mirror 15 .
  • Current mirror 15 generates at its output any current that is present at its input.
  • Current I therefore flows through conducting transistor m 1 , and no net current flows through transistor m 5 .
  • Current I from current source I M does not flow through non-conducting transistor m 3 , but rather flows through transistor m 6 and to the input of current mirror 15 .
  • Current I is mirrored in amplitude and direction at the output of current mirror 15 . Since no current flows through transistor m 5 , the mirrored current I sinks from output node OUT.
  • values of component signals UP, UP_B, DN and DN_B are high, low, low and high, respectively. These values cause transistors m 2 and m 3 to conduct current and cause transistors m 1 and m 4 to block current flow.
  • I CP I flows through transistor m 5 since no current flows through transistor m 1 .
  • FIG. 3 illustrates charge pump 20 according to some embodiments.
  • Charge pump 20 also steers a current I so as to source or sink current I at output node OUT based on components of differential charge pump control signals.
  • Charge pump 20 differs from charge pump 10 in that current switches m 11 through m 14 are PMOS transistors and current mirror 25 is also comprised of PMOS transistors.
  • current sources I M , I CP , I U and I D each generate a current equal to I.
  • a source of transistor m 11 is coupled to a source of transistor m 12 and to current source I D , while a source of transistor m 13 is coupled to a source of transistor m 14 and to current source I U .
  • a drain of transistor m 11 is coupled to a source NMOS transistor m 15 in a folded cascode arrangement, and a drain of transistor m 15 is in turn coupled to an output of current mirror 25 and to output node OUT.
  • a drain of transistor m 13 is also coupled in a folded cascode arrangement to a source of NMOS transistor m 16 , and a drain of transistor m 16 is coupled to an input of current mirror 25 .
  • charge pump 20 One example of operation of charge pump 20 will be described below with respect to an inactive UP differential control signal and an active DOWN differential control signal.
  • Corresponding values of component signals UP, UP_B, DN and DN_B are low, high, high and low. Since transistors m 11 through m 14 are PMOS-type, these values cause transistors m 12 and m 13 to conduct current and cause transistors m 11 and m 14 to block current flow.
  • Charge pump 10 and charge pump 20 therefore use a current mirror to either sink or source current, but not to sink and source current. Such an arrangement may offer low voltage headroom and reasonably high-speed operation.
  • FIG. 4 illustrates fully-differential charge pump 30 according to some embodiments.
  • charge pump 30 receives differential control signals UP and DOWN and generates a differential output signal based thereon. As shown, charge pump 30 utilizes charge pump 10 to generate the OUT_P component of the differential output signal.
  • Charge pump 30 utilizes charge pump 11 to generate the OUT_N component of the differential output signal.
  • Charge pump 11 is identical to charge pump 10 except in that a drain of the NMOS transistor receiving the DN_B component is coupled to an output of the current mirror rather than to an input of the current mirror.
  • a drain of the NMOS transistor receiving the UP_B component is coupled to the input of the current mirror rather than to its output.
  • a particular set of control signals UP, UP_B, DN and DN_B is applied to the inputs of charge pump 45 as described above with respect to charge pump 10 .
  • the control signals are applied differently to charge pump 46 , with the UP signal applied to the DN input (transistor m 4 ), the UP_B signal applied to the DN_B input (transistor m 3 ), the DN signal applied to the UP input (transistor m 2 ) and the DN_B signal applied to the UP_B input (transistor m 1 ).
  • Buffer 50 buffers and/or provides required impedance levels for output signals OUT_P and OUT_N.
  • Charge pumps 45 and 46 differ from charge pump 10 by the inclusion of current source I CMFB .
  • Current sources I CMFB and I CP together generate a current equal to I by virtue of voltage signal V CMFB . More specifically, current source I CMFB receives voltage signal V CMFB from a common-mode feedback amplifier (not shown).
  • the common-mode feedback amplifier receives output signals OUT_P and OUT_N from charge pumps 45 and 46 , detects a common-mode output voltage of charge pump 40 based on the received output signals, receives a common-mode reference voltage, and generates output voltage signal V CMFB based on the detected common-mode voltage and the reference voltage.
  • One advantage of a fully-differential charge pump according to some embodiments are the similar speeds by which current is sunk from or sourced to a load. Moreover, a fully-differential charge pump according to some embodiments may only require matching of differential source currents and matching of differential sink currents, rather than matching of source currents to sink currents.
  • FIG. 6 is a block diagram of a system according to some embodiments.
  • System 100 includes transceiver chip 110 for receiving and transmitting data.
  • Transceiver chip 110 includes charge pump 10 within a Clock and Data Recovery (CDR) circuit.
  • the CDR circuit is used to extract a clock to retime the data received by transceiver chip 110 .
  • CDR Clock and Data Recovery
  • Such a signal may be received from optical interface 120 .
  • Optical interface 120 is coupled to transceiver 110 , receives electrical signals from transceiver 110 , and transmits optical signals based on the received electrical signals.
  • Optical interface 120 also receives optical signals and transmits electrical signals to transceiver 110 based on the received optical signals.
  • Backplane interface 130 is also coupled to transceiver 110 . Electrical signals are transmitted between transceiver 110 and a backplane (not shown) through backplane interface 130 .
  • System 100 may be embodied in a communications module.
  • the communications module may in turn be an element of a line card used to transmit and receive data to and from an optical medium.
  • Charge pump 10 may also be embodied in a Phase-Lock Loop or other circuit requiring one or more of high output impedance, high speed of operation, high output dynamic range, low leakage current and decreased device matching requirements such as those relating to static phase error in certain clock and data recovery loops.
  • embodiments need not possess all or any of these characteristics.

Landscapes

  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)

Abstract

According to some embodiments, a charge pump includes a first transistor to steer an amount of current to a second transistor coupled to the first transistor in a first folded cascode arrangement and to a current mirror to sink substantially the amount of current from a load, and a third transistor to steer the amount of current to a fourth transistor coupled to the third transistor in a second folded cascode arrangement to source substantially the amount of current to the load.

Description

    BACKGROUND
  • Charge pumps are used to source current to or sink current from a load in response to control signals. Typically, these control signals consist of an UP signal and a DOWN signal. Current is sourced to the load in a case that the UP signal is active and the DOWN signal is inactive, and current is sunk from the load in a case that the UP signal is inactive and the DOWN signal is active. Ideally, no current flows through the load if both control signals are in the same state. [0001]
  • In a non-ideal charge pump, some current flows to or from the load if both control signals are in the same state. This current is known as leakage current. Leakage current may be reduced for a particular charge pump by tri-stating the output and/or increasing the output impedance of the charge pump. [0002]
  • A non-ideal charge pump also introduces delays into the system in which it is implemented. For example, many charge pumps employ switched current mirror structures. When a current is mirrored, the speed by which a current is switched through the mirror is limited by the device transit frequency of the transistors comprising the mirror. These delays may be significant in a case that the device transit frequency is similar to the phase detector comparison rate, which is the rate at which the charge pump control signals are updated. Hence, conventional charge pumps using switched current mirrors provide current matching at the expense of speed. [0003]
  • FIG. 1 illustrates a conventional differential charge pump that does not employ a current mirror. [0004] Charge pump 1 includes p-channel metal-oxide semiconductor (PMOS) transistor 2. Transistor 2 receives voltage signal VCMFB from a common-mode feedback amplifier and generates a current which results in a stable common-mode voltage at the output of charge pump 1.
  • A drain of [0005] transistor 2 is coupled to sources of PMOS transistor 3 and PMOS transistor 4. Drains of transistors 3 and 4 are respectively coupled to drains of n-channel metal-oxide semiconductor (NMOS) transistor 5 and NMOS transistor 6, and source terminals of transistors 5 and 6 are coupled to one another and to current source I1. These elements operate to generate differential output signal component OUT_N based on the differential charge pump control signals UP (composed of component signals UP and UPB) and DOWN (composed of DN and DNB). Charge pump 1 uses a second set of the above-described elements to generate differential output signal component OUT_P. However, the components of the UP and DOWN differential control signals are applied to the second set of elements in a different arrangement.
  • [0006] Charge pump 1 therefore uses PMOS current switches stacked on NMOS current switches to steer the UP and DOWN signals to a load. These current switches require high output impedance because they are directly coupled to the output of charge pump 1. This direct coupling also presents problems with signal feedthrough. Additionally, since the current switches are both PMOS and NMOS, charge pump 1 may require level shifting of the differential control signals. Level shifting may be required to allow for enough voltage dynamic range at the output of charge pump 1. Yet another drawback of charge pump 1 is its use of local feedback, which complicates its design.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a diagram illustrating a conventional charge pump. [0007]
  • FIG. 2 is a diagram of a charge pump according to some embodiments. [0008]
  • FIG. 3 is a diagram of a charge pump according to some embodiments. [0009]
  • FIG. 4 is a diagram of a differential-output charge pump according to some embodiments. [0010]
  • FIG. 5 is a block diagram of a differential-output charge pump according to some embodiments. [0011]
  • FIG. 6 is a block diagram of a system according to some embodiments. [0012]
  • DETAILED DESCRIPTION
  • FIG. 2 illustrates [0013] charge pump 10 according to some embodiments. As described with respect to FIG. 1, the UP and DOWN control signals used to control charge pump 10 are differential control signals, each composed of two components (UP & UPB, DN & DNB) which together define a state of a respective differential control signal. Charge pump 10 steers a current I so as to source or sink current I at output node OUT based on the control signals. Although charge pump 10 includes only one output, charge pump 10 may be modified as described below to output a differential signal.
  • Current sources I[0014] M, ICP, IU and ID in FIG. 2 each generate a current equal to I. Charge pump 10 also includes current switches comprising NMOS transistors m1 through m4. Each of transistors m1 through m4 receives a respective component of the differential control signals. A source of transistor m1 is coupled to a source of transistor m2 and to current source IU. Also, a source of transistor m3 is coupled to a source of transistor m4 and to current source ID.
  • A drain of transistor m[0015] 1 is coupled to a source of PMOS transistor m5 in a folded cascode arrangement. A drain of transistor m5 is in turn coupled to an output of NMOS current mirror 15 and to output node OUT. A drain of transistor m3 is also coupled in a folded cascode arrangement to a source of PMOS transistor m6, and a drain of transistor m6 is coupled to an input of current mirror 15. Current mirror 15 generates at its output any current that is present at its input.
  • To explain the operation of [0016] charge pump 10, it will be assumed that the UP differential control signal is inactive and the DOWN differential control signal is active. Corresponding values of component signals UP, UP_B, DN and DN_B are low, high, high and low, respectively. Since transistors m1 through m4 are NMOS-type, these values cause transistors m1 and m4 to conduct current and cause transistors m2 and m3 to block current flow.
  • As mentioned above, I[0017] CP=I=IU. Current I therefore flows through conducting transistor m1, and no net current flows through transistor m5. Current I from current source IM does not flow through non-conducting transistor m3, but rather flows through transistor m6 and to the input of current mirror 15. Current I is mirrored in amplitude and direction at the output of current mirror 15. Since no current flows through transistor m5, the mirrored current I sinks from output node OUT.
  • In a case that that the UP differential control signal is active and the DOWN differential control signal is inactive, values of component signals UP, UP_B, DN and DN_B are high, low, low and high, respectively. These values cause transistors m[0018] 2 and m3 to conduct current and cause transistors m1 and m4 to block current flow. ICP=I flows through transistor m5 since no current flows through transistor m1. Current I flows through transistor m5 because IM=ID=I, resulting in no net current flow through transistor m6. Consequently, no current flows at the input or the output of current mirror 15. The current I flowing through transistor m5 therefore flows entirely to output node OUT.
  • FIG. 3 illustrates [0019] charge pump 20 according to some embodiments. Charge pump 20 also steers a current I so as to source or sink current I at output node OUT based on components of differential charge pump control signals. Charge pump 20 differs from charge pump 10 in that current switches m11 through m14 are PMOS transistors and current mirror 25 is also comprised of PMOS transistors. Again, current sources IM, ICP, IU and ID each generate a current equal to I.
  • A source of transistor m[0020] 11 is coupled to a source of transistor m12 and to current source ID, while a source of transistor m13 is coupled to a source of transistor m14 and to current source IU. A drain of transistor m11 is coupled to a source NMOS transistor m15 in a folded cascode arrangement, and a drain of transistor m15 is in turn coupled to an output of current mirror 25 and to output node OUT. A drain of transistor m13 is also coupled in a folded cascode arrangement to a source of NMOS transistor m16, and a drain of transistor m16 is coupled to an input of current mirror 25.
  • One example of operation of [0021] charge pump 20 will be described below with respect to an inactive UP differential control signal and an active DOWN differential control signal. Corresponding values of component signals UP, UP_B, DN and DN_B are low, high, high and low. Since transistors m11 through m14 are PMOS-type, these values cause transistors m12 and m13 to conduct current and cause transistors m11 and m14 to block current flow.
  • Current I therefore flows through transistor m[0022] 13 and no current flows through transistor m16. Accordingly, no net current flows at the input of output of current mirror 25. Current ICP=I flows through transistor m15 because no current flows through transistor m11. Since no current flows at the output of current mirror 25, current I that flows through transistor m15 is sunk from output node OUT. Charge pump 10 and charge pump 20 therefore both sink current I from an output node in response to an inactive UP differential control signal and an active DOWN differential control signal.
  • [0023] Charge pump 10 and charge pump 20 therefore use a current mirror to either sink or source current, but not to sink and source current. Such an arrangement may offer low voltage headroom and reasonably high-speed operation.
  • FIG. 4 illustrates fully-[0024] differential charge pump 30 according to some embodiments. As a fully-differential charge pump, charge pump 30 receives differential control signals UP and DOWN and generates a differential output signal based thereon. As shown, charge pump 30 utilizes charge pump 10 to generate the OUT_P component of the differential output signal.
  • [0025] Charge pump 30 utilizes charge pump 11 to generate the OUT_N component of the differential output signal. Charge pump 11 is identical to charge pump 10 except in that a drain of the NMOS transistor receiving the DN_B component is coupled to an output of the current mirror rather than to an input of the current mirror. Similarly, a drain of the NMOS transistor receiving the UP_B component is coupled to the input of the current mirror rather than to its output. These differences result in an OUT_N component that is opposite to the OUT_P component generated by charge pump 10 in response to identical UP and DOWN control signals. A more general structure of a fully-differential charge pump is illustrated in FIG. 5. Charge pump 40 includes charge pumps 45 and 46, each of which may be implemented by charge pump 10. As shown, a particular set of control signals UP, UP_B, DN and DN_B is applied to the inputs of charge pump 45 as described above with respect to charge pump 10. The control signals are applied differently to charge pump 46, with the UP signal applied to the DN input (transistor m4), the UP_B signal applied to the DN_B input (transistor m3), the DN signal applied to the UP input (transistor m2) and the DN_B signal applied to the UP_B input (transistor m1). Buffer 50 buffers and/or provides required impedance levels for output signals OUT_P and OUT_N.
  • Charge pumps [0026] 45 and 46 differ from charge pump 10 by the inclusion of current source ICMFB. Current sources ICMFB and ICP together generate a current equal to I by virtue of voltage signal VCMFB. More specifically, current source ICMFB receives voltage signal VCMFB from a common-mode feedback amplifier (not shown). The common-mode feedback amplifier receives output signals OUT_P and OUT_N from charge pumps 45 and 46, detects a common-mode output voltage of charge pump 40 based on the received output signals, receives a common-mode reference voltage, and generates output voltage signal VCMFB based on the detected common-mode voltage and the reference voltage.
  • One advantage of a fully-differential charge pump according to some embodiments are the similar speeds by which current is sunk from or sourced to a load. Moreover, a fully-differential charge pump according to some embodiments may only require matching of differential source currents and matching of differential sink currents, rather than matching of source currents to sink currents. [0027]
  • FIG. 6 is a block diagram of a system according to some embodiments. [0028] System 100 includes transceiver chip 110 for receiving and transmitting data. Transceiver chip 110 includes charge pump 10 within a Clock and Data Recovery (CDR) circuit. The CDR circuit is used to extract a clock to retime the data received by transceiver chip 110.
  • Such a signal may be received from [0029] optical interface 120. Optical interface 120 is coupled to transceiver 110, receives electrical signals from transceiver 110, and transmits optical signals based on the received electrical signals. Optical interface 120 also receives optical signals and transmits electrical signals to transceiver 110 based on the received optical signals.
  • [0030] Backplane interface 130 is also coupled to transceiver 110. Electrical signals are transmitted between transceiver 110 and a backplane (not shown) through backplane interface 130. System 100 may be embodied in a communications module. The communications module may in turn be an element of a line card used to transmit and receive data to and from an optical medium.
  • [0031] Charge pump 10 may also be embodied in a Phase-Lock Loop or other circuit requiring one or more of high output impedance, high speed of operation, high output dynamic range, low leakage current and decreased device matching requirements such as those relating to static phase error in certain clock and data recovery loops. However, embodiments need not possess all or any of these characteristics.
  • The several embodiments described herein are solely for the purpose of illustration. Embodiments may include any currently or hereafter-known current sources, switches and current mirrors. Therefore, persons skilled in the art will recognize from this description that other embodiments may be practiced with various modifications and alterations. [0032]

Claims (16)

What is claimed is:
1. A charge pump comprising:
a first transistor to steer an amount of current to a second transistor coupled to the first transistor in a first folded cascode arrangement and to a current mirror to sink substantially the amount of current from a load; and
a third transistor to steer the amount of current to a fourth transistor coupled to the third transistor in a second folded cascode arrangement to source substantially the amount of current to the load.
2. A charge pump according to claim 1, wherein the first transistor is to steer the amount of current in response to an active DOWN charge pump control signal, and wherein the third transistor is to steer the amount of current in response to an active UP charge pump control signal.
3. A charge pump according to claim 2, wherein the first transistor and the third transistor are NMOS transistors and wherein the second transistor and the fourth transistor are PMOS transistors.
4. A charge pump comprising:
a first transistor to steer an amount of current to a second transistor coupled to the first transistor in a first folded cascode arrangement and to a current mirror to source substantially the amount of current to a load in response to a charge pump control signal; and
a third transistor to steer the amount of current to a fourth transistor coupled to the third transistor in a second folded cascode arrangement to sink substantially the amount of current from the load.
5. A charge pump according to claim 4, wherein the first transistor is to steer the amount of current in response to an active UP charge pump control signal, and wherein the third transistor is to steer the amount of current in response to an active DOWN charge pump control signal.
6. A charge pump according to claim 5, wherein the first transistor and the third transistor are PMOS transistors, wherein the second transistor and the fourth transistor are NMOS transistors, and wherein the UP charge pump control signal and the DOWN charge pump control signal are active low.
7. A charge pump comprising:
first transistor of a first type to receive a first component of a first differential charge pump control signal, a drain of the first transistor coupled to a source of a second transistor of a second type, a drain of the second transistor coupled to an output of a current mirror; and
a third transistor of the first type to receive a first component of a second differential charge pump control signal, a drain of the third transistor coupled to a source of a fourth transistor of the second type, the drain of the fourth transistor coupled to an input of the current mirror.
8. A charge pump according to claim 7,
wherein the first differential charge pump control signal is an UP signal, and wherein the second differential charge pump control signal is a DOWN signal.
9. A charge pump according to claim 7,
wherein the first differential charge pump control signal is a DOWN signal, and
wherein the second differential charge pump control signal is an UP signal.
10. A charge pump according to claim 7,
wherein the first type is NMOS and wherein the second type is PMOS.
11. A charge pump according to claim 7,
wherein the first type is PMOS and wherein the second type is NMOS.
12. A charge pump according to claim 7,
wherein the current mirror comprises transistors of the first type.
13. A charge pump according to claim 7, further comprising:
a current source to output a current based on a common-mode feedback voltage signal.
14. A charge pump according to claim 7, further comprising:
a fifth transistor of the first type to receive a second component of the first differential charge pump control signal, a source of the fifth transistor coupled to a source of the first transistor and a drain of the fifth transistor coupled to a supply voltage; and
a sixth transistor of the first type to receive a second component of the second differential charge pump control signal, a source of the sixth transistor coupled to a source of the third transistor and a drain of the sixth transistor coupled to a supply voltage.
15. A system comprising:
a transceiver comprising a charge pump, the charge pump comprising:
a first transistor of a first type to receive a first component of a first differential charge pump control signal, a drain of the first transistor coupled to a source of a second transistor of a second type, a drain of the second transistor coupled to an output of a current mirror; and
a third transistor of the first type to receive a first component of a second differential charge pump control signal, a drain of the third transistor coupled to a source of a fourth transistor of the second type, the drain of the fourth transistor coupled to an input of the current mirror; and
an optical interface coupled to the transceiver to receive and to transmit optical signals.
16. A system according to claim 15, further comprising:
a backplane interface coupled to the transceiver to receive and transmit electrical signals to a backplane.
US10/325,051 2002-12-20 2002-12-20 Charge pump architecture Expired - Lifetime US6747506B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/325,051 US6747506B1 (en) 2002-12-20 2002-12-20 Charge pump architecture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/325,051 US6747506B1 (en) 2002-12-20 2002-12-20 Charge pump architecture

Publications (2)

Publication Number Publication Date
US6747506B1 US6747506B1 (en) 2004-06-08
US20040119513A1 true US20040119513A1 (en) 2004-06-24

Family

ID=32326022

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/325,051 Expired - Lifetime US6747506B1 (en) 2002-12-20 2002-12-20 Charge pump architecture

Country Status (1)

Country Link
US (1) US6747506B1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7146253B2 (en) * 2003-03-24 2006-12-05 Smartway Solutions, Inc. Device and method for interactive programming of a thermostat
US7015736B1 (en) * 2003-07-17 2006-03-21 Irf Semiconductor, Inc. Symmetric charge pump
JP4605433B2 (en) * 2004-03-02 2011-01-05 横河電機株式会社 Charge pump circuit and PLL circuit using the same
US7400204B2 (en) * 2004-06-28 2008-07-15 Silicon Laboratories Inc. Linear phase detector and charge pump
JP4480547B2 (en) * 2004-11-05 2010-06-16 パナソニック株式会社 Charge pump circuit
KR100714270B1 (en) * 2005-02-17 2007-05-02 삼성전자주식회사 Charge pumping circuit in semiconductor memory device
JP4504930B2 (en) * 2006-01-30 2010-07-14 パナソニック株式会社 Charge pump circuit
CN102075182B (en) * 2009-11-24 2013-01-02 中国科学院微电子研究所 A fast-locking charge-pump phase-locked loop

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1135823A (en) * 1993-10-20 1996-11-13 电视会议系统公司 Adaptive videoconferencing system
JP3306235B2 (en) * 1994-10-31 2002-07-24 三菱電機株式会社 Charge pump circuit and PLL circuit
DE19729634A1 (en) * 1997-07-10 1999-01-14 Lg Semicon Co Ltd Frequency synthesiser
US6611160B1 (en) * 2000-11-21 2003-08-26 Skyworks Solutions, Inc. Charge pump having reduced switching noise

Also Published As

Publication number Publication date
US6747506B1 (en) 2004-06-08

Similar Documents

Publication Publication Date Title
US6686772B2 (en) Voltage mode differential driver and method
US6385265B1 (en) Differential charge pump
US8116240B2 (en) Bi-directional bridge circuit having high common mode rejection and high input sensitivity
US5614855A (en) Delay-locked loop
US6542015B2 (en) Duty cycle correction circuit and apparatus and method employing same
EP0397268B1 (en) Integrated circuit comprising a signal level converter
US6466070B1 (en) Low voltage charge pump
US5821809A (en) CMOS high-speed differential to single-ended converter circuit
JP2003008407A (en) Comparator with offset compensation function and D / A converter with offset compensation function
US7847583B2 (en) Transmitter and receiver using asymmetric transfer characteristics in differential amplifiers to suppress noise
US6366140B1 (en) High bandwidth clock buffer
US6275097B1 (en) Differential charge pump with low voltage common mode feedback circuit
US7119600B2 (en) Wide common mode high-speed differential receiver using thin and thick gate oxide MOSFETS in deep-submicron technology
US6184732B1 (en) Setting the common mode level of a differential charge pump output
US6747506B1 (en) Charge pump architecture
US5774007A (en) Clock distributing apparatus having V/I and I/V converters
EP3961929A1 (en) Phase locked loop
US6686794B1 (en) Differential charge pump
US6529036B1 (en) Low noise, reduced swing differential output buffer design
US20040257162A1 (en) Charge pump for eliminating dc mismatches at common drian nodes
US11757355B1 (en) Clock data recovery circuit including charge pump having reduced glitch current
US7501869B2 (en) Low power, low phase jitter, and duty cycle error insensitive clock receiver architecture and circuits for source synchronous digital data communication
US7190231B2 (en) High-performance charge-pump circuit for phase-locked loops
US6384638B1 (en) Differential charge pump for providing a low charge pump current
US12244317B2 (en) CML to CMOS conversion circuit, receiver circuit and conversion method thereof

Legal Events

Date Code Title Description
AS Assignment

Owner name: INTEL CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:THIARA, RAMAN S.;REEL/FRAME:013609/0362

Effective date: 20021216

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

SULP Surcharge for late payment
REMI Maintenance fee reminder mailed
FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12