US20020132571A1

US20020132571A1 - Method of manufacturing magnetic head

Info

Publication number: US20020132571A1
Application number: US09/811,949
Authority: US
Inventors: Kazuhisa Gonda
Original assignee: Fujitsu Ltd
Current assignee: Fujitsu Ltd
Priority date: 2001-03-19
Filing date: 2001-03-19
Publication date: 2002-09-19
Anticipated expiration: 2021-03-19
Also published as: US6458019B1

Abstract

A surface of a work piece 10, in which a plurality of magnetic head elements are formed on a substrate, is linearly ground. The surface is linearly ground by an outer circumferential face of a disk-shaped rotary grind stone 32. By the linear grind, linear grind traces are formed in the work piece 10. By selecting the direction of the grind traces, amount and direction of warping the work piece can be controlled. By making the direction of the grind traces parallel to a direction of cutting the work piece 10 to form a plurality of blocks, in each of which a plurality of magnetic head elements are arranged, stress in the blocks are released and amount of warping the blocks can be reduced.

Description

FIELD OF TECHNOLOGY

The present invention relates to a method of manufacturing a magnetic head for a magnetic disk drive unit, etc., more precisely relates to a method of manufacturing a magnetic head, which is capable of preventing warp of a wafer during wafer process and warp of slider blocks formed by cutting the wafer.

BACKGROUND TECHNOLOGY

In the steps of manufacturing magnetic heads, magnetic head elements are formed by forming films on a front surface of a wafer, then a rear surface of the wafer is ground so as to define a size of sliders. Successively, the wafer is cut to form a plurality of slider blocks, in each of which a plurality of the magnetic head elements are linearly arranged, and floating rails are respectively formed in cut faces of the slider blocks, then a plurality of sliders are formed by cutting each slider block.

FIG. 6 show a conventional method of grinding the rear surface of the

wafer

10, in which the films have been formed on the front surface. FIG. 6A shows a section of the wafer 10 and a film face 10 a. The original wafer 10 was a flat disk, but the front surface of the wafer, on which the films have been formed, is projected by stress in the films. Thus, the wafer 10 must be held parallel to a standard face of a chuck 12 and the rear surface of the wafer 10 is ground so as to correctly define the size.

The

wafer

10 is held on the chuck 12 by mechanical means, vacuum means or an adhesive, e.g., wax. FIG. 7 shows the mechanical means in which the wafer 10 is held on the chuck 12 by chucking presses 13. FIG. 8 shows the vacuum means in which air is sucked toward a bottom side of the chuck 12 so as to hold the wafer 10, and an outer edge of the wafer is sealed by rubber members 14.

Even if the outer edge of the

wafer

10 is held by the mechanical means or the vacuum means so as to set in a grinding machine, a center part of the wafer 10, which has been set in the grinding machine, is sometimes warped. When the rear surface of the wafer 10 is ground, the wafer 10 is pressed onto a grinding face so as to straighten the warping of the wafer 10 as shown in FIG. 6B, but thickness of the center part of the wafer 10 is not equal to that of the outer edge thereof as shown in FIG. 6C if the warped wafer 10 is ground.

If the thickness of the

wafer

10 is partially different, the size of the sliders disperse. As shown in FIG. 9, the sliders 16 are formed by cutting the slider block, which has been cut from the wafer 10, with regular separations, so the size of the slider 16 a, which is located in the center part of the wafer 10, is bigger than that of the slider 16 b, which is located in the outer edge.

On the other hand, in the case that the warping of the

wafer

10 is straightened and the wafer is ground with uniform thickness, the films are formed on one side of the wafer 10, so imbalanced stress is left in the wafer 10 and the slider blocks must be warped after they are cut from the wafer 10.

In FIG. 10, the

floating rails

20 are formed on a disk-side face of the slider block 18, which has been cut from the wafer 10. In FIG. 10A, the slider block 18 is warped; in FIG. 10B, the slider block 18 is not warped. Since the floating rails 20, each of which has a prescribed pattern, are formed in the slider block 18; in the case of the warped slider block 18 shown in FIG. 10A, the floating rails 20 are shifted from predetermined positions, so that desired floating property cannot be gained.

In FIG. 11, a

slope section

15 is formed at a corner of a disk-side face of the slider 16. When the slope section 15 is formed by abrading the corner of the slider block 18, if the slider block 18 is warped as shown in FIG. 11B, size of the slope section 15 of the slider, which is located at the center part of the slider block 18, is greater than that of the slope section 15 of the slider, which is located at the outer edge.

The size of the conventional slider was about 4 mm; these days the size of the slider for a small disk drive unit is about 1 mm. Therefore, dispersion of the size of the sliders badly influences properties of the magnetic heads.

An object of the present invention is to provide a method of a magnetic head, in which the warping of the wafer can be prevented, the wafer process and the step of forming the sliders from the wafer can be highly precisely executed and the magnetic heads having high quality and reliability can be manufactured.

DISCLOSURE OF THE INVENTION

In the present invention, the method of manufacturing a magnetic head comprises the step of linearly grinding a surface of a work piece, in which a plurality of magnetic head elements are formed on a substrate; the surface may be ground by an outer circumferential face of a disk-shaped rotary grind stone; and width of the outer circumferential face of the disk-shaped rotary grind stone may be 10 mm or more. In the method, amount and direction of the warping of the work piece can be controlled, and a direction of grinding traces can be properly selected for further machining.

And, in the method, the surface, which has been linearly ground, may be abraded in a circumferential direction; and the surface, which has been linearly ground, may be abraded by a rotating face of a disk-shaped rotary grind stone. In this method, the entire work piece can be uniformly abraded, so that the warping of the work piece can be reduced.

Further, in the method, if the surface is ground in a direction parallel to a direction of cutting the work piece to form a plurality of blocks, in each of which a plurality of magnetic head elements are arranged, stress in the work piece can be released and the warping of the slider block can be reduced.

The method of the present invention can prevent the warping of the work piece during the wafer process or the step of grinding the work piece, improve manufacturing accuracy of the magnetic head, form patterns with higher accuracy, make shapes and quality of the sliders stable, and stably manufacture high quality magnetic heads.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an explanation view of a surface grinding machine; FIG. 2 is an explanation view showing a method of grinding a wafer with a rotary grind stone; FIG. 3 is an explanation view showing the wafer on which grind traces are formed; FIG. 4 is an explanation view of a rotary grinding machine; FIG. 5A is a sectional view of a wafer chucking unit; FIG. 5B is a front view of the wafer chucking unit; FIGS. 6A, 6B and [0016] 6C are explanation views showing the conventional method of grinding the rear surface of the wafer; FIG. 7 is a sectional view of the conventional mechanical means for holding the wafer; FIG. 8 is a sectional view of the conventional vacuum means for holding the wafer; FIG. 9 is an explanation view showing the method of forming the sliders from the wafer; FIGS. 10A and 10B are explanation view showing the methods of forming the floating rails on the warped slider and the straight slider; FIG. 11A is a side view of the slider block having the slope section; and FIG. 11B is an explanation view showing the method of forming the slope section in the slider block.

EMBODIMENTS

The present invention will now be explained in detail with reference to the accompanying drawings. [0017]
In the present embodiment, magnetizable films, etc. are formed on a front surface of a [0018] wafer 10 by wafer process, then a rear surface of the wafer 10 is ground by a surface grinding machine.
FIG. 1 shows a method of grinding the rear surface of the wafer [0019] 10 (work piece). In the method, the wafer 10 is adhered on a movable stage 30, which is capable of linearly and reciprocally moving, by wax, to make the rear surface face upward, then the wafer 10 is linearly ground by a rotary grind stone 32.
The [0020] rotary grind stone 32 is rotated in one direction only; relative moving directions of the rotary grind stone 32 with respect to the wafer 10 are defined by moving directions of the movable stage 30. As shown in FIG. 2, the rotary grind stone 32 is linearly moved and sidewardly moved, with same pitches, so as to grind the whole surface of the wafer 10, further its tracks are partially overlapped.
By linearly moving the [0021] rotary grind stone 32 with respect to the wafer 10, linear grind traces are marked in the rear surface of the wafer 10 as shown in FIG. 3.
An object of grinding the [0022] wafer 10 is to adjust thickness of the wafer 10 and to make the rear surface of the wafer 10 rough by rough grinding. By roughly grinding the surface, grinding time can be shortened; by making the rear surface of the wafer 10 rough, stress between a film face 10 a and the rear surface of the wafer 10 can be controlled.
In the present embodiment, the wafer was made of Al[0023] ₂O₃·TiC and had a diameter of 5 inches and thickness of 2 mm; the rotary grind stone had a diameter of 250 mm and a width of 10-40 mm, included diamond grains having diameters of 40-60 μm, and was rotated at rotational speed of 3,000 rpm; the wafer 10 was moved perpendicular to an orientation flat so as to grind the wafer 10 until the thickness reaches 1.28 mm. Amount of grinding was 0.72 mm.
Next, the [0024] wafer 10, whose rear surface had been ground, was finished by another rotary grinding machine. FIG. 4 shows a summarized structure of the rotary grinding machine, whose shaft is horizontally arranged. In the rotary grinding machine, the wafer 10 to be machined is rotated, and a rotating face of a grind stone 40 is arranged parallel to the surface of the wafer 10 to be ground.
A [0025] symbol 34 stands for a chuck for holding the wafer 10; a symbol 36 stands for a driving section. A structure of the chuck 34 is shown in FIG. 5. The chuck 34 draws the film face of the wafer 10 by air suction, so that the whole face of the wafer can be held. As shown in FIG. 5B, sucking grooves 34 a are coaxially formed in a sucking face of the chuck 34, and the sucking grooves are communicated to a center air sucking hole 38 by communicating grooves so as to hold the wafer 10 parallel to the sucking face of the chuck 34.
Since the whole sucking face of the [0026] chuck 34 holds the wafer 10 by air suction, the warping of the wafer 10 can be straightened and the wafer 10 can be held parallel to the sucking face of the chuck 34.
In the rotary grinding machine, the [0027] chuck 34 holds the wafer 10 by air suction, and the grind stone 40 is pressed onto the rotated wafer 10 so as to grind the wafer 10. In the present embodiment, the grind stone 40 is a cup-shaped grind stone. The cup-shaped grind stone is effective for surface grinding, and the rotary grinding machine is capable of uniformly grinding the entire wafer 10. In the present embodiment, the cup-shaped grind stone had a diameter of 150-200 mm, included diamond grains having diameters of 40-60 μm, and was rotated at rotational speed of 2,000-3,000 rpm so as to simultaneously grind the whole surface of the wafer 10. Amount of grinding was 0.03 mm, so that amount of warping the wafer 10 could be reduced to half of initial amount of warping. Further, amount of warping slider blocks, which had been cut from the wafer 10 whose amount of warping had been reduced, could be reduced, so that floating rails, which would be formed in disk-side faces of the slider blocks by patterning, could be formed in predetermined zones of the slider blocks.
In another case, the [0028] wafer 10 was ground by the cup-shaped grind stone including diamond grains, whose grain diameters were 10-20 μm; the amount of warping the ground wafer 10 was twice as large as the initial amount of warping. These results teach that the amount of warping the wafer 10 can be controlled by making the rear surface of the wafer 10 rough. Namely, stress in the rear surface of the wafer 10 can be controlled by making the rear surface of the wafer rough, so that the warping of the wafer 10 can be controlled. Minute spaces are formed among particles of Al₂O₃TiC, which constitute the wafer 10, when the wafer 10 is ground, and they act to extend the rear surface of the wafer 10, so that stress between the film face and the rear surface is balanced. Further, in other case of grinding the wafer 10, the whole surface of the wafer 10 was ground, by surface grinding only, before cutting the slider blocks from the wafer 10.
Conditions of the surface grinding were equal to those of the former case. But, in the present case, the [0029] wafer 10, whose initial thickness was 2 mm, was ground until reaching the thickness of 1.25 mm.
The grinding direction of one sample wafer was perpendicular to the orientation flat; the grinding direction of the other one was parallel thereto; amount of warping the slider blocks, which had been cut from the [0030] wafers 10, were measured; the amount of warping the wafer, which had been ground in the direction parallel to the orientation flat, was three times as large as the other wafer.
The slider blocks are cut, and their longitudinal directions are perpendicular to the orientation flat. The stress in the [0031] wafer 10 is released in the direction parallel to the grind traces, so the stress is released in the case of grinding the wafer in the direction perpendicular to the orientation flat and the amount of warping the slider blocks can be reduced.
The results also teach that the stress in the wafer and the warping of the slider blocks can be controlled by grinding the rear surface of the wafer. By adjusting the direction of the grind traces in the rear surface of the [0032] wafer 10, the amount and the direction of warping the wafer 10 can be controlled. In the case that the wafer 10 is cut in the prescribed direction so as to form the slider blocks and said direction must be defined with respect to the wafer 10, the direction of the grind traces are properly selected.
The method of roughly grinding the rear surface of the [0033] wafer 10 so as to control the warping of the wafer 10 may be employed in the steps of: cutting the wafer 10 to form the slider blocks after forming the films; and forming the films on the wafer 10 by wafer process.
In the wafer process, as well as the conventional method shown in FIG. 7, the [0034] wafer 10 is fixed to a jig, and patterns are formed by exposing step, etc. If the wafer 10 is warped in the process, focusing accuracy in the exposing step must be low and the patterns having predetermined accuracy cannot be formed.
Further, in the wafer process, the [0035] wafer 10 is heated, so the wafer 10 must be cooled by a jig, but if the wafer 10 is warped, the wafer is not fully cooled and the films formed thereon are overheated, so that properties of the films are not satisfied.
In the wafer process too, the warping of the [0036] wafer 10 can be restricted by roughly grinding the rear surface of the wafer 10. If the wafer 10 can be ground during the wafer process, said grinding method may be executed; if the wafer cannot be ground, the rear surface may be roughly machined by ion milling or laser means. By forming the rough surface, the warping of the wafer 10 can be prevented and the wafer 10 can be correctly set in the jig, so that highly precise patterning can be executed and the films can have desired properties.
Note that, in the present embodiments, the rear surface of the [0037] wafer 10 is roughly machined by grinding, etc., further the front surface of the wafer 10, on which the films are formed, may be formed into a rough surface so as to control the warping of the wafer 10. The front surface of the wafer 10 may be formed into the rough surface in the step prior to the wafer process, or it may be formed into the rough surface, by ion milling, etc., during the wafer process. Forming the rough surface can prevent the warping of the whole wafer 10 and straighten partial waving and twisting thereof.

INDUSTRIAL APPLICABILITY

As described above, the method of the present invention can be applied to the step of grinding wafers for manufacturing magnetic heads of magnetic disk drive units, etc., and the method is capable of preventing the warping of the wafers and slider blocks, which are cut from the wafers. [0038]

Claims

What is claimed is:

1. A method of manufacturing a magnetic head comprising the step of linearly grinding a surface of a work piece 10, in which a plurality of magnetic head elements are formed on a substrate.

2. The method according to claim 1 wherein said surface is ground by an outer circumferential face of a disk-shaped rotary grind stone 32.

3. The method according to claim 2 wherein width of the outer circumferential face of said disk-shaped rotary grind stone 32 is 10 mm or more.

4. The method according to claim 1 wherein said surface, which has been linearly ground, is abraded in a circumferential direction.

5. The method according to claim 4 wherein said surface, which has been linearly ground, is abraded by a rotating face of a disk-shaped rotary grind stone 40.

6. The method according to claim 1 wherein said surface is ground in a direction parallel to a direction of cutting said work piece 10 to form a plurality of blocks, in each of which a plurality of magnetic head elements are arranged.