[go: up one dir, main page]

US20020115003A1 - Photomask blank and photomask - Google Patents

Photomask blank and photomask Download PDF

Info

Publication number
US20020115003A1
US20020115003A1 US10/020,987 US2098701A US2002115003A1 US 20020115003 A1 US20020115003 A1 US 20020115003A1 US 2098701 A US2098701 A US 2098701A US 2002115003 A1 US2002115003 A1 US 2002115003A1
Authority
US
United States
Prior art keywords
film
photomask
chromium
seed layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10/020,987
Other versions
US6727027B2 (en
Inventor
Tetsushi Tsukamoto
Hideo Kaneko
Tamotsu Maruyama
Yukio Inazuki
Tsutomu Shinagawa
Satoshi Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Assigned to SHIN-ETSU CHEMICAL CO., LTD. reassignment SHIN-ETSU CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INAZUKI, YUKIO, KANEKO, HIDEO, MARUYAMA, TAMOTSU, OKAZAKI, SATOSHI, SHINAGAWA, TSUTOMU, TSUKAMOTO, TETSUSHI
Publication of US20020115003A1 publication Critical patent/US20020115003A1/en
Application granted granted Critical
Publication of US6727027B2 publication Critical patent/US6727027B2/en
Adjusted expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Definitions

  • the present invention relates to a photomask blank and a photomask for use in the fabrication of semiconductor integrated circuits and high-density integrated circuits.
  • Photolithographic processes involving the use of photomasks are employed in the fabrication of high-density semiconductor integrated circuits such as LSI and VLSI chips, color filters for charge-coupled devices and liquid-crystal displays, and magnetic heads.
  • Photomasks used for microfabrication are produced from a photomask blank composed of a transparent substrate such as quartz glass or aluminosilicate glass and a light-shielding film, typically in the form of a chromium film, deposited thereon by a sputtering or vacuum evaporation technique.
  • the photomask is created by forming a specific pattern in the light-shielding film of the photomask blank.
  • the chromium-based light-shielding film has a high light reflectance.
  • an antireflective coating is generally formed on the surface side, or both the surface and back sides, of the light-shielding film.
  • the photomask blanks from which photomasks are formed generally have two and three-layer structures.
  • the two-layer structure photomask blanks include a light-shielding film, typically in the form of a chromium film, deposited on a synthetic quartz substrate by sputtering or vacuum evaporation, and an antireflective film deposited on the surface of the chromium film for preventing the exposure light reflected by the silicon wafer from being reflected again.
  • the three-layer structure photomask blanks are arrived at by forming an additional antireflective film on the substrate side.
  • JP-B 62-37385 discloses a photomask blank comprising a transparent substrate on which have been successively formed a chromium carbide-nitride film containing chromium carbide and chromium nitride as an underside antireflective coating, a chromium film as a light-shielding film, and a chromium oxide-nitride film containing chromium oxide and chromium nitride as a surface antireflective coating.
  • An important requirement of photomasks is that the substrate be flat to assure accurate transfer of the pattern. Yet, no matter how flat a substrate is used, forming a light-shielding chromium base film on the substrate tends to exacerbate the surface state, especially in the two-layer structure, because the light-shielding film is characterized by growth of large grains on the substrate surface. Since the current defect inspection and circuit pattern inspection technologies generally utilize light reflected or transmitted by the surface, the advanced inspection at a high detection sensitivity can detect a degraded surface state of film or rough surface as defects, which suggests the undesired prevention of high sensitivity inspection.
  • An object of the invention is to provide a high-performance photomask blank and photomask having a sufficient uniformity of film quality to accept high-sensitivity detection for the defect inspection and circuit pattern inspection and capable of accurately forming a desired micropattern without distortion.
  • the invention is directed to a photomask blank or photomask comprising a transparent substrate, at least one layer of light-shielding film and at least one layer of antireflective film both on the substrate. It has been found that when a seed layer is formed between the transparent substrate and the light-shielding film or the antireflective film, the light-shielding film or the antireflective film is improved in surface flatness whereby a photomask blank or photomask having uniformity of film quality is obtained.
  • the invention provides a photomask blank comprising a transparent substrate by which exposure light is transmitted, at least one layer of light-shielding film and at least one layer of antireflective film both on the substrate, and a seed layer disposed between the transparent substrate and the light-shielding film or the antireflective film.
  • the seed layer is formed of a chromium material containing at least one of oxygen, nitrogen and carbon.
  • the seed layer has a thickness of 0.5 to 10 nm.
  • the light-shielding film or the antireflective film is formed of a chromium material containing at least one of oxygen, nitrogen and carbon.
  • the photomask blank desirably has a surface roughness (RMS) of up to 0.9 nm.
  • Also contemplated herein is a photomask fabricated by lithographically patterning the photomask blank.
  • the seed layer on the transparent substrate presents growth nuclei for the light-shielding film or the antireflective film so that the film grows on the seed layer while creating fine grains. Then the interposition of the seed layer eventually endows the photomask blank or photomask with a reduced surface roughness.
  • FIG. 1 is a sectional view of a photomask blank according to one embodiment of the invention.
  • FIG. 2 is a sectional view of a photomask obtained from the photomask blank shown in FIG. 1.
  • FIG. 3 is a sectional view of a photomask blank according to another embodiment of the invention.
  • FIG. 4 is a sectional view of a photomask obtained from the photomask blank shown in FIG. 3.
  • FIG. 5 is a series of schematic sectional views illustrating a photomask manufacturing method such as may be used in connection with the invention.
  • FIG. 5A shows a photomask blank on which a resist film has been formed
  • FIG. 5B shows the blank after the resist film has been patterned
  • FIG. 5C shows the blank after dry etching or wet etching
  • FIG. 5D shows the completed photomask after the resist film has been removed.
  • the photomask blank of the invention includes a transparent substrate 1 by which exposure light is transmitted, at least one layer of light-shielding film 2 and at least one layer of antireflective film 4 on the substrate 1 .
  • a seed layer 3 is disposed between the transparent substrate 1 and the light-shielding film 2 or the antireflective film 4 .
  • the seed layer 3 is formed of a chromium material containing at least one of oxygen, nitrogen and carbon.
  • the photomask blank is improved in surface flatness.
  • the layers such that the seed layer 3 lie on the substrate 1 , the light-shielding film 2 lie on the seed layer 3 , and the antireflective film 4 lie on the light-shielding film 2 as shown in FIG. 1.
  • the layers such that the seed layer 3 lie on the substrate 1 , a first antireflective film 4 lie on the seed layer 3 , the light-shielding film 2 lie on the first antireflective film 4 , and a second antireflective film 4 lie on the light-shielding film 2 as shown in FIG. 3.
  • the substrate on which films are to be deposited is made of any desired material that is transparent to the exposure light, for example, preferably quartz, aluminosilicate glass, calcium fluoride or magnesium fluoride.
  • the seed layer is formed on the substrate.
  • the seed layer is made of a chromium material containing at least one of oxygen, nitrogen and carbon, for example, such as chromium oxide, chromium nitride, chromium oxynitride, chromium oxycarbide, or chromium oxide nitride carbide, with the chromium oxycarbide and chromium oxide nitride carbide being preferred.
  • the chromium content of the seed layer is preferably 25 to 60 atom %, and especially 30 to 50 atom %.
  • chromium oxide nitride preferably has a nitrogen content of 2 to 50 atom %, especially 10 to 30 atom % and an oxygen content of 5 to 60 atom %, especially 20 to 50 atom %.
  • Chromium oxide carbide preferably has a carbon content of 2 to 50 atom %, especially 5 to 25 atom % and an oxygen content of 5 to 60 atom %, especially 20 to 50 atom %.
  • Chromium carbide nitride oxide preferably has a nitrogen content of 2 to 50 atom %, especially 5 to 25 atom %, a carbon content of 2 to 50 atom %, especially 5 to 25 atom %, and an oxygen content of 5 to 60 atom %, especially 20 to 50 atom %.
  • the necessary minimum thickness to serve as initial growth nuclei in the range of 0.5 to 10 nm is preferred.
  • a thickness of 0.5 to 5 nm is more preferred.
  • a seed layer of less than 0.5 nm thick may be ineffective for improving surface roughness.
  • a seed layer of more than 10 nm thick may achieve no additional improvement and take a longer time to deposit, resulting in low productivity.
  • the seed layer can be formed on the substrate surface by a reactive sputtering process using chromium as the target.
  • the sputtering process may be one which employs a direct-current power supply (DC sputtering) or a high-frequency power supply (RF sputtering). Either a magnetron sputtering system or a conventional sputtering system may be used.
  • the DC sputtering is advantageous because the mechanism involved is simple, and the magnetron sputtering system is preferred because film formation is more rapid, increasing productivity.
  • the film-forming system may be either a continuous, in-line system or a single-workpiece processing system.
  • the sputtering gases introduced into the sputtering chamber may be one each of a carbon-containing gas (e.g., CH 4 , CO 2 , and CO) and an oxygen-containing gas (e.g., CO 2 and O 2 ).
  • a gas mixture obtained by mixing these gases with an inert gas e.g., Ar, Ne and Kr may be used.
  • sputtering gas or a mixture of CO 2 and an inert gas as the sputtering gas is especially advantageous partly for safety and partly for uniformity in quality of the CrCO film being deposited because the CO 2 gas can spread more broadly and uniformly throughout the chamber owing to its lower reactivity than oxygen or other suitable gases.
  • Each of the sputtering gases may be introduced separately into the sputtering chamber.
  • the sputtering gases introduced into the sputtering chamber may be one each of a carbon-containing gas (e.g., CH 4 ,CO 2 , and CO), an oxygen-containing gas (e.g., CO 2 and O 2 ) and a nitrogen-containing gas (e.g., NO and N 2 ).
  • a gas mixture obtained by mixing these gases with an inert gas e.g., Ar, Ne and Kr may be used.
  • Using a mixture of CO 2 and N 2 or a mixture of CO 2 , N 2 and an inert gas is especially advantageous partly for safety and partly for uniformity in quality of the CrCON film being deposited because the CO 2 gas can spread more broadly and uniformly throughout the chamber owing to its lower reactivity than oxygen or other suitable gases.
  • Each of the sputtering gases may be introduced separately into the sputtering chamber.
  • the sputtering target need not be composed entirely of chromium so long as chromium is a major component.
  • suitable targets include chromium targets which contain oxygen, nitrogen or carbon, and chromium targets to which a combination of oxygen, nitrogen and carbon has been added.
  • sputtering is desirably carried out under a low pressure and at a high power.
  • high power low pressure conditions, sputtered particles have greater energy so that the proportion of sputtered particles obliquely landing on the substrate is reduced. This suppresses the shadow effect and ensures to deposit a seed layer with a minimized surface roughness.
  • Preferred conditions include a pressure of 0.1 to 1.0 Pa, especially 0.25 to 0.32 Pa and a power of 3.9 to 11.0 W/cm 2 , especially 7.0 to 9.0 W/cm 2 .
  • chromium materials containing at least one of oxygen, nitrogen and carbon are suitable.
  • examples include chromium oxide, chromium nitride, chromium oxynitride, chromium oxycarbide, and chromium oxide nitride carbide, with the chromium oxycarbide and chromium oxide nitride carbide being preferred.
  • These materials may have well-known compositions.
  • the light-shielding film is 10 to 150 nm thick, especially 50 to 80 nm thick, and the antireflective film is 10 to 100 nm thick, especially 20 to 40 nm thick.
  • the film structure in the photomask blank of the invention is not limited only to a chromium-based two-layer or three-layer film structure.
  • the photomask blank may have instead a four-layer film structure.
  • the film structure may further include a phase shifter film which changes the phase of light at the exposure light wavelength.
  • the photomask blank of the invention may be adapted for the production of not only transmission-type masks, but also reflection-type masks.
  • the photomask blank having the seed layer, light-shielding film and antireflective film stacked thereon has a surface roughness (RMS) of 0.9 nm or less, and especially 0.7 nm or less.
  • RMS surface roughness
  • Such a surface roughness can be accomplished by interposing the seed layer in the above-described manner.
  • the inventive photomask blank constructed as above is then patterned by a lithographic process to give a photomask of the three or four-layer structure including the seed layer, light-shielding film and antireflective film as shown in FIG. 2 or 4 .
  • the photomask of FIG. 2 may be manufactured by a process as shown in FIG. 5.
  • a resist film 15 is formed on the antireflective film 14 (FIG. 5A).
  • the resist film 15 is then patterned (FIG. 5B).
  • the antireflective film 14 , light-shielding film 13 and seed layer 12 are dry-etched or wet-etched through openings in the patterned resist film 15 (FIG. 5C).
  • the resist film 15 is subsequently stripped (FIG. 5D).
  • application of the resist film, patterning (exposure and development), dry or wet etching, and removal of the resist film may be carried out by known methods.
  • a CrCON film of 3 nm thick was deposited as the seed layer by DC sputtering.
  • Metallic chromium was used as the target, and the gases passed through the system were Ar (32 sccm) as the sputtering gas and CO 2 (1.0 sccm) and N 2 (18 sccm) as the reactive sputtering gas.
  • Ar 32 sccm
  • CO 2 1.0 sccm
  • N 2 (18 sccm)
  • Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 7.1 W/cm 2 .
  • the composition of the CrCON film was 48 atom % chromium, 9 atom % carbon, 17 atom % oxygen and 26 atom % nitrogen, as determined by electron spectroscopy for chemical analysis (ESCA).
  • CrCON film was deposited to a thickness of 70 nm on the seed layer (CrCON film) by DC sputtering.
  • Chromium was used as the target, and the gases passed through the system were Ar (32 sccm), CO 2 (0.7 sccm) and N 2 (1 sccm).
  • Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/cm 2 .
  • the composition of the CrCON film was 63 atom % chromium, 8 atom % carbon, 20 atom % oxygen and 9 atom % nitrogen, as determined by ESCA.
  • a further CrCON film was deposited to a thickness of 25 nm on the CrCON film by DC sputtering. Chromium was used as the target, and the gases passed through the system were Ar (32 sccm), CO 2 (14 sccm) and N 2 (10 scam). Other sputtering conditions included a gas pressure during discharge of 0.3 Pa, a power of 6.6 W/Cm 2 and a temperature of 120° C.
  • the composition of the CrCON film was 42 atom % chromium, 5 atom % carbon, 43 atom % oxygen and 10 atom % nitrogen, as determined by ESCA.
  • the surface roughness (RMS) of the thus obtained blank was determined over an area of 1 ⁇ m ⁇ 1 ⁇ m using an atomic force microscope (NanoScope IIIa by Digital Instrument). The surface roughness was 0.395 nm.
  • a CrCON film of 3 nm thick was deposited as the seed layer by DC sputtering.
  • Metallic chromium was used as the target, and the gases passed through the system were Ar (32 scam) as the sputtering gas and CO 2 (1.0 scam) and N 2 (18 scam) as the reactive sputtering gas.
  • Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 7.1 W/am 2 .
  • the composition of the CrCON film was 48 atom % chromium, 9 atom % carbon, 17 atom % oxygen and 26 atom % nitrogen, as determined by ESCA.
  • CrCON film was deposited to a thickness of 25 nm on the seed layer (CrCON film) by DC sputtering.
  • Chromium was used as the target, and the gases passed through the system were Ar (32 sccm), CO 2 (14 sccm) and N 2 (10 scam).
  • Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/Cm 2 .
  • the composition of the CrCON film was 42 atom % chromium, 5 atom % carbon, 43 atom % oxygen and 10 atom % nitrogen, as determined by ESCA.
  • a CrCO film was deposited to a thickness of 70 nm on the CrCON film by DC sputtering. Chromium was used as the target, and the gases passed through the system were Ar (32 scam) and CO 2 (0.7 scam). Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/Cm 2 .
  • the composition of the CrCO film was 69 atom % chromium, 13 atom % carbon, and 18 atom % oxygen, as determined by ESCA.
  • a further CrCON film was deposited to a thickness of 25 nm on the CrCO film by DC sputtering, yielding a chromium base three-layer film.
  • Chromium was used as the target, and the gases passed through the system were Ar (32 scam), CO 2 (14 scam) and N 2 (10 sccm).
  • Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/cm 2 .
  • the composition of the CrCON film was 42 atom % chromium, 5 atom % carbon, 43 atom % oxygen and 10 atom % nitrogen, as determined by ESCA.
  • the surface roughness of the blank was similarly determined to be 0.382 nm.
  • Films were deposited as in Example 1 except that the seed layer was omitted.
  • the blank had a surface roughness of 1.446 nm.
  • Films were deposited as in Example 2 except that the seed layer was omitted.
  • the blank had a surface roughness of 1.440 nm.
  • Example 1 formed 0.395
  • Example 2 formed 0.382 Comparative Example 1 none 1.446 Comparative Example 2 none 1.440
  • the resulting photomask blank has a reduced surface roughness. Then high-sensitivity detection is possible in the process of defect inspection and circuit pattern inspection.
  • the resulting photomask of quality can accommodate further miniaturization and higher integration of semiconductor integrated circuits.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to a photomask blank and a photomask for use in the fabrication of semiconductor integrated circuits and high-density integrated circuits. [0002]
  • 2. Prior Art [0003]
  • Photolithographic processes involving the use of photomasks are employed in the fabrication of high-density semiconductor integrated circuits such as LSI and VLSI chips, color filters for charge-coupled devices and liquid-crystal displays, and magnetic heads. [0004]
  • Photomasks used for microfabrication are produced from a photomask blank composed of a transparent substrate such as quartz glass or aluminosilicate glass and a light-shielding film, typically in the form of a chromium film, deposited thereon by a sputtering or vacuum evaporation technique. The photomask is created by forming a specific pattern in the light-shielding film of the photomask blank. [0005]
  • The chromium-based light-shielding film has a high light reflectance. To prevent light which reflects back from the semiconductor substrate being exposed and passes through the projection lens from being reflected again by the photomask and returning to the semiconductor substrate, an antireflective coating is generally formed on the surface side, or both the surface and back sides, of the light-shielding film. [0006]
  • The photomask blanks from which photomasks are formed generally have two and three-layer structures. The two-layer structure photomask blanks include a light-shielding film, typically in the form of a chromium film, deposited on a synthetic quartz substrate by sputtering or vacuum evaporation, and an antireflective film deposited on the surface of the chromium film for preventing the exposure light reflected by the silicon wafer from being reflected again. The three-layer structure photomask blanks are arrived at by forming an additional antireflective film on the substrate side. [0007]
  • While a variety of photomask blanks are known in the art, JP-B 62-37385 discloses a photomask blank comprising a transparent substrate on which have been successively formed a chromium carbide-nitride film containing chromium carbide and chromium nitride as an underside antireflective coating, a chromium film as a light-shielding film, and a chromium oxide-nitride film containing chromium oxide and chromium nitride as a surface antireflective coating. The prior art also teaches the use of CrON (JP-B 61-46821 and JP-B 62-27387) and CrN (JP-B 62-27386 and JP-B 62-27387) as the antireflective coating. Also, a single-layer film of chromium nitride is disclosed in JP-B 4-1339. [0008]
  • As the level of integration and miniaturization of high-density semiconductor integrated circuits has continued to rise, the process of inspecting defects in photomask blanks and circuit patterns is now carried out at a high detection sensitivity. Accordingly, the light-shielding film and antireflective film are required to have a high uniformity of quality. [0009]
  • An important requirement of photomasks is that the substrate be flat to assure accurate transfer of the pattern. Yet, no matter how flat a substrate is used, forming a light-shielding chromium base film on the substrate tends to exacerbate the surface state, especially in the two-layer structure, because the light-shielding film is characterized by growth of large grains on the substrate surface. Since the current defect inspection and circuit pattern inspection technologies generally utilize light reflected or transmitted by the surface, the advanced inspection at a high detection sensitivity can detect a degraded surface state of film or rough surface as defects, which suggests the undesired prevention of high sensitivity inspection. [0010]
    • SUMMARY OF THE INVENTION
  • An object of the invention is to provide a high-performance photomask blank and photomask having a sufficient uniformity of film quality to accept high-sensitivity detection for the defect inspection and circuit pattern inspection and capable of accurately forming a desired micropattern without distortion. [0011]
  • The invention is directed to a photomask blank or photomask comprising a transparent substrate, at least one layer of light-shielding film and at least one layer of antireflective film both on the substrate. It has been found that when a seed layer is formed between the transparent substrate and the light-shielding film or the antireflective film, the light-shielding film or the antireflective film is improved in surface flatness whereby a photomask blank or photomask having uniformity of film quality is obtained. [0012]
  • The invention provides a photomask blank comprising a transparent substrate by which exposure light is transmitted, at least one layer of light-shielding film and at least one layer of antireflective film both on the substrate, and a seed layer disposed between the transparent substrate and the light-shielding film or the antireflective film. The seed layer is formed of a chromium material containing at least one of oxygen, nitrogen and carbon. Typically the seed layer has a thickness of 0.5 to 10 nm. Preferably, the light-shielding film or the antireflective film is formed of a chromium material containing at least one of oxygen, nitrogen and carbon. The photomask blank desirably has a surface roughness (RMS) of up to 0.9 nm. [0013]
  • Also contemplated herein is a photomask fabricated by lithographically patterning the photomask blank. [0014]
  • According to the invention, the seed layer on the transparent substrate presents growth nuclei for the light-shielding film or the antireflective film so that the film grows on the seed layer while creating fine grains. Then the interposition of the seed layer eventually endows the photomask blank or photomask with a reduced surface roughness.[0015]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and advantages of the invention will become more apparent from the following description, taken in conjunction with the accompanying drawings. [0016]
  • FIG. 1 is a sectional view of a photomask blank according to one embodiment of the invention. [0017]
  • FIG. 2 is a sectional view of a photomask obtained from the photomask blank shown in FIG. 1. [0018]
  • FIG. 3 is a sectional view of a photomask blank according to another embodiment of the invention. [0019]
  • FIG. 4 is a sectional view of a photomask obtained from the photomask blank shown in FIG. 3. [0020]
  • FIG. 5 is a series of schematic sectional views illustrating a photomask manufacturing method such as may be used in connection with the invention. FIG. 5A shows a photomask blank on which a resist film has been formed, FIG. 5B shows the blank after the resist film has been patterned, FIG. 5C shows the blank after dry etching or wet etching, and FIG. 5D shows the completed photomask after the resist film has been removed.[0021]
    • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Referring to FIGS. 1 and 3, the photomask blank of the invention includes a [0022] transparent substrate 1 by which exposure light is transmitted, at least one layer of light-shielding film 2 and at least one layer of antireflective film 4 on the substrate 1. A seed layer 3 is disposed between the transparent substrate 1 and the light-shielding film 2 or the antireflective film 4. The seed layer 3 is formed of a chromium material containing at least one of oxygen, nitrogen and carbon. The photomask blank is improved in surface flatness.
  • In the case of three-layer construction including the seed layer, one layer of light-shielding film and one layer of antireflective layer, it is preferred to arrange the layers such that the seed layer [0023] 3 lie on the substrate 1, the light-shielding film 2 lie on the seed layer 3, and the antireflective film 4 lie on the light-shielding film 2 as shown in FIG. 1.
  • In the case of four-layer construction including the seed layer, one layer of light-shielding film and two layers of antireflective layer, it is preferred to arrange the layers such that the seed layer [0024] 3 lie on the substrate 1, a first antireflective film 4 lie on the seed layer 3, the light-shielding film 2 lie on the first antireflective film 4, and a second antireflective film 4 lie on the light-shielding film 2 as shown in FIG. 3.
  • The substrate on which films are to be deposited is made of any desired material that is transparent to the exposure light, for example, preferably quartz, aluminosilicate glass, calcium fluoride or magnesium fluoride. [0025]
  • According to the invention, the seed layer is formed on the substrate. The seed layer is made of a chromium material containing at least one of oxygen, nitrogen and carbon, for example, such as chromium oxide, chromium nitride, chromium oxynitride, chromium oxycarbide, or chromium oxide nitride carbide, with the chromium oxycarbide and chromium oxide nitride carbide being preferred. [0026]
  • The chromium content of the seed layer is preferably 25 to 60 atom %, and especially 30 to 50 atom %. Specifically, chromium oxide nitride preferably has a nitrogen content of 2 to 50 atom %, especially 10 to 30 atom % and an oxygen content of 5 to 60 atom %, especially 20 to 50 atom %. Chromium oxide carbide preferably has a carbon content of 2 to 50 atom %, especially 5 to 25 atom % and an oxygen content of 5 to 60 atom %, especially 20 to 50 atom %. Chromium carbide nitride oxide preferably has a nitrogen content of 2 to 50 atom %, especially 5 to 25 atom %, a carbon content of 2 to 50 atom %, especially 5 to 25 atom %, and an oxygen content of 5 to 60 atom %, especially 20 to 50 atom %. [0027]
  • With respect to the thickness of the seed layer, the necessary minimum thickness to serve as initial growth nuclei in the range of 0.5 to 10 nm is preferred. A thickness of 0.5 to 5 nm is more preferred. A seed layer of less than 0.5 nm thick may be ineffective for improving surface roughness. A seed layer of more than 10 nm thick may achieve no additional improvement and take a longer time to deposit, resulting in low productivity. [0028]
  • The seed layer can be formed on the substrate surface by a reactive sputtering process using chromium as the target. [0029]
  • The sputtering process may be one which employs a direct-current power supply (DC sputtering) or a high-frequency power supply (RF sputtering). Either a magnetron sputtering system or a conventional sputtering system may be used. The DC sputtering is advantageous because the mechanism involved is simple, and the magnetron sputtering system is preferred because film formation is more rapid, increasing productivity. The film-forming system may be either a continuous, in-line system or a single-workpiece processing system. [0030]
  • Illustratively, where a chromium oxide nitride (CrCO) film is deposited as the seed layer, the sputtering gases introduced into the sputtering chamber may be one each of a carbon-containing gas (e.g., CH[0031] 4, CO2, and CO) and an oxygen-containing gas (e.g., CO2 and O2). Alternatively, a gas mixture obtained by mixing these gases with an inert gas (e.g., Ar, Ne and Kr) may be used. Using CO2 gas or a mixture of CO2 and an inert gas as the sputtering gas is especially advantageous partly for safety and partly for uniformity in quality of the CrCO film being deposited because the CO2 gas can spread more broadly and uniformly throughout the chamber owing to its lower reactivity than oxygen or other suitable gases. Each of the sputtering gases may be introduced separately into the sputtering chamber.
  • Where a chromium oxide nitride carbide (CrCON) film is deposited as the seed layer, the sputtering gases introduced into the sputtering chamber may be one each of a carbon-containing gas (e.g., CH[0032] 4,CO2, and CO), an oxygen-containing gas (e.g., CO2 and O2) and a nitrogen-containing gas (e.g., NO and N2). Alternatively, a gas mixture obtained by mixing these gases with an inert gas (e.g., Ar, Ne and Kr) may be used. Using a mixture of CO2 and N2 or a mixture of CO2, N2 and an inert gas is especially advantageous partly for safety and partly for uniformity in quality of the CrCON film being deposited because the CO2 gas can spread more broadly and uniformly throughout the chamber owing to its lower reactivity than oxygen or other suitable gases. Each of the sputtering gases may be introduced separately into the sputtering chamber.
  • The sputtering target need not be composed entirely of chromium so long as chromium is a major component. Examples of suitable targets include chromium targets which contain oxygen, nitrogen or carbon, and chromium targets to which a combination of oxygen, nitrogen and carbon has been added. [0033]
  • In forming the seed layer, sputtering is desirably carried out under a low pressure and at a high power. Under high power, low pressure conditions, sputtered particles have greater energy so that the proportion of sputtered particles obliquely landing on the substrate is reduced. This suppresses the shadow effect and ensures to deposit a seed layer with a minimized surface roughness. Preferred conditions include a pressure of 0.1 to 1.0 Pa, especially 0.25 to 0.32 Pa and a power of 3.9 to 11.0 W/cm[0034] 2, especially 7.0 to 9.0 W/cm2.
  • For the light-shielding film and antireflective film, chromium materials containing at least one of oxygen, nitrogen and carbon are suitable. Examples include chromium oxide, chromium nitride, chromium oxynitride, chromium oxycarbide, and chromium oxide nitride carbide, with the chromium oxycarbide and chromium oxide nitride carbide being preferred. These materials may have well-known compositions. [0035]
  • Preferably, the light-shielding film is 10 to 150 nm thick, especially 50 to 80 nm thick, and the antireflective film is 10 to 100 nm thick, especially 20 to 40 nm thick. [0036]
  • The film structure in the photomask blank of the invention is not limited only to a chromium-based two-layer or three-layer film structure. For example, the photomask blank may have instead a four-layer film structure. The film structure may further include a phase shifter film which changes the phase of light at the exposure light wavelength. The photomask blank of the invention may be adapted for the production of not only transmission-type masks, but also reflection-type masks. [0037]
  • In a preferred embodiment, the photomask blank having the seed layer, light-shielding film and antireflective film stacked thereon has a surface roughness (RMS) of 0.9 nm or less, and especially 0.7 nm or less. Such a surface roughness can be accomplished by interposing the seed layer in the above-described manner. [0038]
  • The inventive photomask blank constructed as above is then patterned by a lithographic process to give a photomask of the three or four-layer structure including the seed layer, light-shielding film and antireflective film as shown in FIG. 2 or [0039] 4.
  • More specifically, using the photomask blank of FIG. 1, the photomask of FIG. 2 may be manufactured by a process as shown in FIG. 5. After the [0040] seed layer 12, light-shielding film 13, and antireflective film 14 are successively formed on the transparent substrate 11, a resist film 15 is formed on the antireflective film 14 (FIG. 5A). The resist film 15 is then patterned (FIG. 5B). Next, the antireflective film 14, light-shielding film 13 and seed layer 12 are dry-etched or wet-etched through openings in the patterned resist film 15 (FIG. 5C). The resist film 15 is subsequently stripped (FIG. 5D). In this process, application of the resist film, patterning (exposure and development), dry or wet etching, and removal of the resist film may be carried out by known methods.
  • There has been described a photomask blank having a significantly improved surface flatness to accept high-sensitivity detection for the defect inspection and circuit pattern inspection and capable of accurately forming a desired micropattern. The resulting photomask can accommodate higher integration in semiconductor integrated circuits and related devices. [0041]
    • EXAMPLE
  • Examples of the invention are given below by way of illustration, and not by way of limitation. [0042]
    • Example 1
  • On a 6-inch quartz substrate, a CrCON film of 3 nm thick was deposited as the seed layer by DC sputtering. Metallic chromium was used as the target, and the gases passed through the system were Ar (32 sccm) as the sputtering gas and CO[0043] 2 (1.0 sccm) and N2 (18 sccm) as the reactive sputtering gas. Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 7.1 W/cm2. The composition of the CrCON film was 48 atom % chromium, 9 atom % carbon, 17 atom % oxygen and 26 atom % nitrogen, as determined by electron spectroscopy for chemical analysis (ESCA).
  • Next, another CrCON film was deposited to a thickness of 70 nm on the seed layer (CrCON film) by DC sputtering. Chromium was used as the target, and the gases passed through the system were Ar (32 sccm), CO[0044] 2 (0.7 sccm) and N2 (1 sccm). Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/cm2. The composition of the CrCON film was 63 atom % chromium, 8 atom % carbon, 20 atom % oxygen and 9 atom % nitrogen, as determined by ESCA.
  • A further CrCON film was deposited to a thickness of 25 nm on the CrCON film by DC sputtering. Chromium was used as the target, and the gases passed through the system were Ar (32 sccm), CO[0045] 2 (14 sccm) and N2 (10 scam). Other sputtering conditions included a gas pressure during discharge of 0.3 Pa, a power of 6.6 W/Cm2 and a temperature of 120° C. The composition of the CrCON film was 42 atom % chromium, 5 atom % carbon, 43 atom % oxygen and 10 atom % nitrogen, as determined by ESCA.
  • The surface roughness (RMS) of the thus obtained blank was determined over an area of 1 μm×1 μm using an atomic force microscope (NanoScope IIIa by Digital Instrument). The surface roughness was 0.395 nm. [0046]
    • Example 2
  • On a 6-inch quartz substrate, a CrCON film of 3 nm thick was deposited as the seed layer by DC sputtering. Metallic chromium was used as the target, and the gases passed through the system were Ar (32 scam) as the sputtering gas and CO[0047] 2 (1.0 scam) and N2 (18 scam) as the reactive sputtering gas. Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 7.1 W/am2. The composition of the CrCON film was 48 atom % chromium, 9 atom % carbon, 17 atom % oxygen and 26 atom % nitrogen, as determined by ESCA.
  • Next, another CrCON film was deposited to a thickness of 25 nm on the seed layer (CrCON film) by DC sputtering. Chromium was used as the target, and the gases passed through the system were Ar (32 sccm), CO[0048] 2 (14 sccm) and N2 (10 scam). Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/Cm2. The composition of the CrCON film was 42 atom % chromium, 5 atom % carbon, 43 atom % oxygen and 10 atom % nitrogen, as determined by ESCA.
  • Next, a CrCO film was deposited to a thickness of 70 nm on the CrCON film by DC sputtering. Chromium was used as the target, and the gases passed through the system were Ar (32 scam) and CO[0049] 2 (0.7 scam). Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/Cm2. The composition of the CrCO film was 69 atom % chromium, 13 atom % carbon, and 18 atom % oxygen, as determined by ESCA.
  • A further CrCON film was deposited to a thickness of 25 nm on the CrCO film by DC sputtering, yielding a chromium base three-layer film. Chromium was used as the target, and the gases passed through the system were Ar (32 scam), CO[0050] 2 (14 scam) and N2 (10 sccm). Other sputtering conditions included a gas pressure during discharge of 0.3 Pa and a power of 6.6 W/cm2. The composition of the CrCON film was 42 atom % chromium, 5 atom % carbon, 43 atom % oxygen and 10 atom % nitrogen, as determined by ESCA.
  • The surface roughness of the blank was similarly determined to be 0.382 nm. [0051]
    • Comparative Example 1
  • Films were deposited as in Example 1 except that the seed layer was omitted. The blank had a surface roughness of 1.446 nm. [0052]
    • Comparative Example 2
  • Films were deposited as in Example 2 except that the seed layer was omitted. The blank had a surface roughness of 1.440 nm. [0053]
  • These data are tabulated below. [0054]
    TABLE 1
    Surface roughness
    Seed layer (nm)
    Example 1 formed 0.395
    Example 2 formed 0.382
    Comparative Example 1 none 1.446
    Comparative Example 2 none 1.440
  • It is evident that the blanks having a light-shielding film and an antireflective film formed on the seed layer have a significantly reduced surface roughness. A surface observation under AFM showed that the film on the seed layer consisted of grains with uniform size. [0055]
  • Since a light-shielding film and an antireflective film are formed on a seed layer on a transparent substrate according to the invention and any film builds up on the seed layer in accordance with fine granular growth, the resulting photomask blank has a reduced surface roughness. Then high-sensitivity detection is possible in the process of defect inspection and circuit pattern inspection. The resulting photomask of quality can accommodate further miniaturization and higher integration of semiconductor integrated circuits. [0056]
  • Japanese Patent Application No. 2000-396138 is incorporated herein by reference. [0057]
  • Although some preferred embodiments have been described, many modifications and variations may be made thereto in light of the above teachings. It is therefore to be understood that the invention may be practiced otherwise than as specifically described without departing from the scope of the appended claims. [0058]

Claims (5)

1. A photomask blank comprising a transparent substrate by which exposure light is transmitted, at least one layer of light-shielding film and at least one layer of antireflective film both on the substrate, and a seed layer disposed between the transparent substrate and the light-shielding film or the antireflective film, said seed layer being formed of a chromium material containing at least one of oxygen, nitrogen and carbon.
2. The photomask blank of claim 1 wherein said light-shielding film or said antireflective film is formed of a chromium material containing at least one of oxygen, nitrogen and carbon.
3. The photomask blank of claim 1 wherein said seed layer has a thickness of 0.5 to 10 nm.
4. The photomask blank of claim 1 having a surface roughness (RMS) of up to 0.9 nm.
5. A photomask fabricated by lithographically patterning the photomask blank of claim 1.
US10/020,987 2000-12-26 2001-12-19 Photomask blank and photomask Expired - Lifetime US6727027B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000396138A JP4088742B2 (en) 2000-12-26 2000-12-26 Photomask blank, photomask, and method for manufacturing photomask blank
JP2000-396138 2000-12-26

Publications (2)

Publication Number Publication Date
US20020115003A1 true US20020115003A1 (en) 2002-08-22
US6727027B2 US6727027B2 (en) 2004-04-27

Family

ID=18861488

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/020,987 Expired - Lifetime US6727027B2 (en) 2000-12-26 2001-12-19 Photomask blank and photomask

Country Status (6)

Country Link
US (1) US6727027B2 (en)
EP (1) EP1220034B1 (en)
JP (1) JP4088742B2 (en)
KR (1) KR100619661B1 (en)
DE (1) DE60106186T2 (en)
TW (1) TW533334B (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100494442B1 (en) * 2002-10-22 2005-06-13 주식회사 에스앤에스텍 method for manufacturing of phase shift blank mask and photo-mask
US20060057469A1 (en) * 2003-02-03 2006-03-16 Mitsuhiro Kureishi Photomask blank, photomask, and pattern transfer method using photomask
US20070212618A1 (en) * 2006-03-10 2007-09-13 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask
US20070212619A1 (en) * 2006-03-10 2007-09-13 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask making method
US20080215890A1 (en) * 2006-04-17 2008-09-04 Broadcom Corporation System and method for secure remote biometric authentication
KR100864375B1 (en) 2006-01-03 2008-10-21 주식회사 에스앤에스텍 Blank mask and manufacturing method of Photo-mask using the same
US7790339B2 (en) 2006-04-21 2010-09-07 Shin-Etsu Chemical Co., Ltd. Photomask blank
CN102200657A (en) * 2010-03-23 2011-09-28 旭硝子株式会社 Light-shielding film-attached glass substrate and liquid crystal display device
CN111095108A (en) * 2017-07-17 2020-05-01 Asml荷兰有限公司 Information Determination Apparatus and Method
US11137678B2 (en) 2018-06-19 2021-10-05 Shin-Etsu Chemical Co., Ltd. Method of evaluating photomask blank-associated substrate
US20220317554A1 (en) * 2021-04-06 2022-10-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, method for producing photomask, and photomask

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7264908B2 (en) * 2003-05-16 2007-09-04 Shin-Etsu Chemical Co., Ltd. Photo mask blank and photo mask
DE112005001588B4 (en) * 2004-07-09 2021-02-25 Hoya Corp. Photomask blank, photomask manufacturing process, and semiconductor package manufacturing process
JP2006048033A (en) * 2004-07-09 2006-02-16 Hoya Corp Photomask blank, method for manufacturing photomask, and method for manufacturing semiconductor device
US20060057472A1 (en) * 2004-09-15 2006-03-16 Fu Tsai Robert C Method for making chrome photo mask
JP2007219038A (en) * 2006-02-15 2007-08-30 Hoya Corp Mask blank and photomask
TWI409580B (en) * 2008-06-27 2013-09-21 S&S Tech Co Ltd Blankmask, photomask and method for manufacturing the same
JP2009294682A (en) * 2009-09-24 2009-12-17 Hoya Corp Mask blank and photomask
KR101883025B1 (en) * 2010-12-24 2018-07-27 호야 가부시키가이샤 Mask blank and method of producing the same, and transfer mask and method of producing the same
JP6229466B2 (en) * 2013-12-06 2017-11-15 信越化学工業株式会社 Photomask blank
KR101684571B1 (en) 2015-05-27 2016-12-08 티피에스 주식회사 A method for manufacturing photpmask
KR101684572B1 (en) 2015-05-27 2016-12-08 티피에스 주식회사 A method for recycling photomask
JP6540758B2 (en) * 2017-07-31 2019-07-10 信越化学工業株式会社 Photo mask blank
JP7167922B2 (en) * 2017-09-07 2022-11-09 株式会社ニコン Photomask blanks, photomask, exposure method, and device manufacturing method
WO2019177116A1 (en) * 2018-03-15 2019-09-19 大日本印刷株式会社 Large-sized photomask
JP6988697B2 (en) * 2018-05-31 2022-01-05 信越化学工業株式会社 Photomask blank, photomask manufacturing method and photomask
JP7280171B2 (en) * 2019-12-05 2023-05-23 信越化学工業株式会社 PHOTOMASK BLANK, PHOTOMASK MANUFACTURING METHOD, AND PHOTOMASK
KR20230090601A (en) * 2021-12-15 2023-06-22 에스케이엔펄스 주식회사 Blank mask, apparatus for forming a layer and manufacturing method for the blank mask

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104141A (en) 1980-12-22 1982-06-29 Dainippon Printing Co Ltd Photomask and photomask substrate
EP0054736B1 (en) 1980-12-22 1985-05-22 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
US4374912A (en) 1981-03-31 1983-02-22 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
JPS5990852A (en) 1982-11-16 1984-05-25 Hosaka Glass Kk Photomask blank
JPS5990853A (en) 1982-11-16 1984-05-25 Hosaka Glass Kk Photomask blank
US4563407A (en) 1982-11-16 1986-01-07 Hoya Corporation Photo-mask blank comprising a shading layer having a variable etch rate
JPS6095437A (en) 1983-10-28 1985-05-28 Hoya Corp Photomask blank
JPS61272746A (en) 1985-05-28 1986-12-03 Asahi Glass Co Ltd Photomask blank and photomask
US5230971A (en) * 1991-08-08 1993-07-27 E. I. Du Pont De Nemours And Company Photomask blank and process for making a photomask blank using gradual compositional transition between strata
JP3333943B2 (en) * 1992-09-07 2002-10-15 ヤマハ発動機株式会社 Electric scooter
EP0788027B1 (en) * 1995-07-19 2001-10-10 Hoya Corporation Phase shift mask blank and production method therefor
AU2012268970B2 (en) 2011-06-15 2016-01-28 Navigo Proteins Gmbh Dimeric binding proteins based on modified ubiquitins
EP2741337B1 (en) 2012-12-07 2018-04-11 IMEC vzw Semiconductor heterostructure field effect transistor and method for making thereof
JP6227387B2 (en) 2013-11-27 2017-11-08 株式会社シーアールティ Electric wire manufacturing equipment
JP6237385B2 (en) 2014-03-25 2017-11-29 トヨタ自動車株式会社 Vehicle control device

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100494442B1 (en) * 2002-10-22 2005-06-13 주식회사 에스앤에스텍 method for manufacturing of phase shift blank mask and photo-mask
US20060057469A1 (en) * 2003-02-03 2006-03-16 Mitsuhiro Kureishi Photomask blank, photomask, and pattern transfer method using photomask
KR100864375B1 (en) 2006-01-03 2008-10-21 주식회사 에스앤에스텍 Blank mask and manufacturing method of Photo-mask using the same
US7989124B2 (en) 2006-03-10 2011-08-02 Toppan Printing Co., Ltd. Photomask blank and photomask making method
US8012654B2 (en) 2006-03-10 2011-09-06 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask
US20070212619A1 (en) * 2006-03-10 2007-09-13 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask making method
US7767366B2 (en) 2006-03-10 2010-08-03 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask
US7767367B2 (en) * 2006-03-10 2010-08-03 Toppan Printing Co., Ltd. Photomask blank and photomask making method
TWI454836B (en) * 2006-03-10 2014-10-01 信越化學工業股份有限公司 Photomask plate and mask manufacturing method
US20100261100A1 (en) * 2006-03-10 2010-10-14 Hiroki Yoshikawa Photomask blank and photomask
US20100261099A1 (en) * 2006-03-10 2010-10-14 Hiroki Yoshikawa Photomask blank and photomask making method
US20100261101A1 (en) * 2006-03-10 2010-10-14 Hiroki Yoshikawa Photomask blank and photomask
US20070212618A1 (en) * 2006-03-10 2007-09-13 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask
US8003284B2 (en) 2006-03-10 2011-08-23 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask
CN102385241A (en) * 2006-03-10 2012-03-21 信越化学工业株式会社 Photomask blank and photomask making method
US20080215890A1 (en) * 2006-04-17 2008-09-04 Broadcom Corporation System and method for secure remote biometric authentication
US7790339B2 (en) 2006-04-21 2010-09-07 Shin-Etsu Chemical Co., Ltd. Photomask blank
CN102200657A (en) * 2010-03-23 2011-09-28 旭硝子株式会社 Light-shielding film-attached glass substrate and liquid crystal display device
US20110236604A1 (en) * 2010-03-23 2011-09-29 Asahi Glass Company, Limited Light-shielding film-attached glass substrate and liquid crystal display device
US8357437B2 (en) * 2010-03-23 2013-01-22 Asahi Glass Company, Limited Light-shielding film-attached glass substrate and liquid crystal display device
CN111095108A (en) * 2017-07-17 2020-05-01 Asml荷兰有限公司 Information Determination Apparatus and Method
US11137678B2 (en) 2018-06-19 2021-10-05 Shin-Etsu Chemical Co., Ltd. Method of evaluating photomask blank-associated substrate
US20220317554A1 (en) * 2021-04-06 2022-10-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, method for producing photomask, and photomask
US12372863B2 (en) * 2021-04-06 2025-07-29 Shin-Etsu Chemical Co., Ltd. Photomask blank, method for producing photomask, and photomask

Also Published As

Publication number Publication date
TW533334B (en) 2003-05-21
KR20020052982A (en) 2002-07-04
DE60106186D1 (en) 2004-11-11
DE60106186T2 (en) 2006-03-09
EP1220034A3 (en) 2003-01-08
JP2002196475A (en) 2002-07-12
JP4088742B2 (en) 2008-05-21
EP1220034A2 (en) 2002-07-03
KR100619661B1 (en) 2006-09-05
US6727027B2 (en) 2004-04-27
EP1220034B1 (en) 2004-10-06

Similar Documents

Publication Publication Date Title
US6727027B2 (en) Photomask blank and photomask
US6589699B2 (en) Photomask blank and photomask
US7351505B2 (en) Phase shift mask blank, phase shift mask, and pattern transfer method
US7901842B2 (en) Photomask blank and method of producing the same, method of producing photomask, and method of producing semiconductor device
US7425390B2 (en) Preparation of halftone phase shift mask blank
JP3956103B2 (en) Photomask blank, photomask and photomask blank evaluation method
US20090057143A1 (en) Film-depositing target and preparation of phase shift mask blank
US6503668B2 (en) Phase shift mask blank, phase shift mask, and method of manufacture
KR20120057488A (en) Method for manufacturing photomask blank and photomask blank and photomask
JP3645888B2 (en) Halftone phase shift mask
JP2004053663A (en) Photomask blank, photomask and method for selecting photomask blank
JPH07209849A (en) Halftone phase shift photomask and blanks for halftone phase shift photomask
KR100610749B1 (en) Method for making chrome photo mask
JP2002287330A (en) Photomask blanks and photomasks
JPH08272074A (en) Halftone phase shift photomask and blanks for halftone phase shift photomask
JP3664332B2 (en) Method for manufacturing halftone phase shift photomask
KR20070072337A (en) Halftone phase inversion blank mask, photomask and manufacturing method thereof
JP2001337437A (en) Method for manufacturing photomask blanks and method for manufacturing photomask
JP2004333649A (en) Photomask blank and photomask

Legal Events

Date Code Title Description
AS Assignment

Owner name: SHIN-ETSU CHEMICAL CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TSUKAMOTO, TETSUSHI;KANEKO, HIDEO;MARUYAMA, TAMOTSU;AND OTHERS;REEL/FRAME:012400/0059

Effective date: 20011203

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12