US20020061153A1 - Integrated optical component - Google Patents
Integrated optical component Download PDFInfo
- Publication number
- US20020061153A1 US20020061153A1 US09/401,295 US40129599A US2002061153A1 US 20020061153 A1 US20020061153 A1 US 20020061153A1 US 40129599 A US40129599 A US 40129599A US 2002061153 A1 US2002061153 A1 US 2002061153A1
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- section
- facet
- laser
- wave guide
- integrated optical
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Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
Definitions
- the invention relates to an integrated optical component, and more particularly a component having a first section comprising a wave guide perpendicular to an output facet of the component, a termination of the wave guide being coupled to this facet, and comprising a second section upstream from the first capable of being interfered with by the signal reflected by the said facet and guided by the wave guide.
- the invention relates notably to laser/modulator components and advantageously applies to electro-absorption integrated optical laser/modulators and to the Mach-Zehnder laser/modulator.
- the invention applies to any integrated optical component having a structure having the drawbacks cited above. It therefore applies in particular to laser/modulators, whatever the laser and whatever the modulator, insofar as modulation speeds ranging from 2.5 Gb/s to 10 Gb/s and more are used.
- FIG. 1 depicts a diagram illustrating an integrated electro-absorption laser/modulator. This component includes a modulator section 1 , preceded by a laser section 2 .
- the modulator section 1 is shown in detail in the sectional drawing C. There can thus be distinguished an n-doped indium phosphide InP substrate surmounted by a wave guide active layer 1 of quaternary material InGaAsP.
- a p-doped InP cavity 4 rests on the layer 1 and is delimited by a dielectric layer 5 . Above the cavity rests a layer of a quaternary material such as InGaAsP. Above this layer is disposed an electrical contact layer 9 .
- the modulator section therefore comprises a wave guide 100 perpendicular to the output facet P of the component (cleaved face).
- a known solution making it possible to reduce the amount of optical power reflected consists in depositing an antireflection coating on the output facet of the component.
- a reflexivity of ⁇ 30 to ⁇ 40 dB is thus typically obtained, which is insufficient for the majority of applications. It is necessary, in particular for laser/modulators, to have ⁇ 60 dB of reflectivity in order to avoid any excitation of the laser with this signal which is at the resonant frequency of the laser.
- FIGS. 2A and 2B Another known solution illustrated by FIGS. 2A and 2B consists in adding a window 8 of indium phosphide InP at the end of the wave guide 7 buried in a substrate 3 .
- the active cavity i.e. the guiding layer
- the light is then diffracted in this guidance interruption zone precisely as a result of the low guidance exhibited by the window thus implemented.
- a small amount R of signal is reflected and can return into the guide and reach the laser as can be seen in FIGS. 2A and 2B.
- MOVPE Metal Organic Vapour Phase Epitaxy
- MBE Molecular Beam Epitaxy
- the object of the invention is more particularly an integrated optical component having a first section comprising a wave guide perpendicular to an output facet of the component, a termination of the wave guide being coupled to this facet, and comprising a second section upstream from the first capable of being interfered with by the signal reflected by the said facet and guided by the wave guide, principally characterised in that the said guide termination comprises an inclined guiding section and a laterally non-guiding section leading to this facet.
- the wave guide is extended by an inclined guiding section followed by a laterally non-guiding section leading to the output facet of the component.
- the inclined guiding section is of curved form.
- the component has an isolation zone in order to remove the parasitic capacity effects exhibited by the laterally non-guiding section.
- the first section is a modulator section and the second section upstream of the first is a laser section, the said component having a laser/modulator function.
- FIG. 1 depicts the diagram of an electro-absorption integrated laser/modulator according to the prior art
- FIGS. 2A and 2B depict the perspective and cross-sectional view diagram of an integrated optical section comprising a wave guide with an InP window according to the prior art
- FIG. 3 depicts the top view diagram of an integrated optical component according to the invention, this component being a laser/modulator,
- FIGS. 4A, 4B and 4 C depict respectively sectional views along A-A, B-B and C-C according to FIG. 3,
- FIGS. 5A and 5B depict respectively the curves i and ii of the laser resonance signal.
- the first section S 1 of the component comprises the wave guide 10 of a laser/modulator, while the second section S 2 , upstream, comprises the laser 20 .
- the wave guide 10 made of quaternary material such as InGaAsP has conventionally an H+ doped interface I with the laser 20 and an output 12 in the plane of the output facet P of the component (cleavage plane).
- the wave guide 10 has a termination T comprising an inclined section 13 terminating in a section 14 which is laterally non-guiding for the signal originating from the narrow section 13 of the guide.
- the non-guiding section 14 has, for this, a width E (for example 40 ⁇ m) greater than the width e of the narrow section of the guide (which is for example 3.5 ⁇ m).
- the distance 1 between the output G of the narrow section 13 of the guide and the output facet P of the component is around 30 ⁇ m. This distance can be reduced to 15 ⁇ m.
- the guide has preferably an isolation zone around the narrow output G, as can be seen in FIG. 4C.
- this isolation zone is obtained by H+ proton implantation.
- the component can be implemented conventionally by any known epitaxy technique since a mask of suitable form (an angle of inclination with respect to the output facet and widening) is used for the etching of the active layer forming the guide which can be seen in FIG. 3.
- the widened edge 11 of the active layer has an angle of 180° with the lateral edges of the section 13 .
- This edge 11 could for example have an angle greater than 180°.
- Another variant can consist in taking an infinite width E, i.e., in practice, the edge 11 of width E reaches the two lateral edges of the component (the edges perpendicular to the facet P).
- the curves i illustrate the oscillation at the resonant frequency of the laser caused by the return reflected signal for a component having a rectilinear structure such as that depicted in FIGS. 2A and 2B.
- the curves ii illustrate the signal at the resonant frequency of the laser with a component having a structure in accordance with the present invention. This figure shows that there is no oscillation.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Glass Compositions (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
- The invention relates to an integrated optical component, and more particularly a component having a first section comprising a wave guide perpendicular to an output facet of the component, a termination of the wave guide being coupled to this facet, and comprising a second section upstream from the first capable of being interfered with by the signal reflected by the said facet and guided by the wave guide.
- The invention relates notably to laser/modulator components and advantageously applies to electro-absorption integrated optical laser/modulators and to the Mach-Zehnder laser/modulator.
- An electro-absorption laser/modulator is taken subsequently for illustrating the prior art and defining the technical problem encountered as well as for defining the invention. Such components are used in applications such as long-distance optical signal transmissions.
- Thus, the invention applies to any integrated optical component having a structure having the drawbacks cited above. It therefore applies in particular to laser/modulators, whatever the laser and whatever the modulator, insofar as modulation speeds ranging from 2.5 Gb/s to 10 Gb/s and more are used.
- FIG. 1 depicts a diagram illustrating an integrated electro-absorption laser/modulator. This component includes a
modulator section 1, preceded by alaser section 2. - The
modulator section 1 is shown in detail in the sectional drawing C. There can thus be distinguished an n-doped indium phosphide InP substrate surmounted by a wave guideactive layer 1 of quaternary material InGaAsP. A p-doped InP cavity 4 rests on thelayer 1 and is delimited by adielectric layer 5. Above the cavity rests a layer of a quaternary material such as InGaAsP. Above this layer is disposed an electrical contact layer 9. - The modulator section therefore comprises a
wave guide 100 perpendicular to the output facet P of the component (cleaved face). - As has been said, the problem encountered with such components comes from the fact that there are reflections of part of the optical signal, on the output facet of the component, and that the reflected signal, which goes back into the guide, can interfere with the upstream sections. This is because the signal emitted by the laser and modulated by the modulator section is partly reflected by this output facet and excites the laser at its resonant frequency. The consequence is that the output signal of the component has a high level of interference and this leads to a degradation of the transmission performance.
- A known solution making it possible to reduce the amount of optical power reflected consists in depositing an antireflection coating on the output facet of the component. A reflexivity of −30 to −40 dB is thus typically obtained, which is insufficient for the majority of applications. It is necessary, in particular for laser/modulators, to have −60 dB of reflectivity in order to avoid any excitation of the laser with this signal which is at the resonant frequency of the laser.
- Another known solution illustrated by FIGS. 2A and 2B consists in adding a
window 8 of indium phosphide InP at the end of thewave guide 7 buried in asubstrate 3. To this end, the active cavity, i.e. the guiding layer, is interrupted before the output facet P. The light is then diffracted in this guidance interruption zone precisely as a result of the low guidance exhibited by the window thus implemented. A small amount R of signal is reflected and can return into the guide and reach the laser as can be seen in FIGS. 2A and 2B. - It should be noted on this subject that the integrated optical component fabrication methods call upon the various epitaxy techniques in order to grow layers on an InP substrate. Among these techniques can be cited the so-called MOVPE (Metal Organic Vapour Phase Epitaxy) and MBE (Molecular Beam Epitaxy) techniques.
- It turns out that, whatever the epitaxy technique used, the creation of an InP window, as depicted in FIGS. 2A and 2B, at the end of the modulator wave guide, requires an additional lithography step (etching) before the final InP growth.
- The implementation of an InP window at the end of the modulator wave guide therefore imposes additional steps which are an etching, and then the growth of the InP in the window.
- Besides this first drawback noted with this technique, another exists as a result of the modulator/window interface. This is because this interface can create power losses or interference on the signal.
- There is another solution used in a slightly different field to that of laser/modulators, which is that of semiconductor optical amplifiers. In effect, in order to avoid part of the guided and reflected signal being reintroduced into the guide in the case of semiconductor optical amplifiers, the solution consists in creating an angle between the wave guide and the output facet. Thus, the light is reflected at this angle and is consequently less guided.
- However, such a solution is not sufficient for strongly guiding structures, as is the case in the integrated optical components comprising a laser/modulator, since the light remains confined in the guide despite the angle of inclination.
- The object of the invention is more particularly an integrated optical component having a first section comprising a wave guide perpendicular to an output facet of the component, a termination of the wave guide being coupled to this facet, and comprising a second section upstream from the first capable of being interfered with by the signal reflected by the said facet and guided by the wave guide, principally characterised in that the said guide termination comprises an inclined guiding section and a laterally non-guiding section leading to this facet.
- Thus, the wave guide is extended by an inclined guiding section followed by a laterally non-guiding section leading to the output facet of the component.
- Advantageously, the inclined guiding section is of curved form.
- According to another characteristic, the component has an isolation zone in order to remove the parasitic capacity effects exhibited by the laterally non-guiding section.
- According to one application of the invention, the first section is a modulator section and the second section upstream of the first is a laser section, the said component having a laser/modulator function.
- Other characteristics and advantages of the present invention will emerge from a reading of the description which is produced below and which is given by way of a non-limitative example and with reference to the drawings in which:
- FIG. 1 depicts the diagram of an electro-absorption integrated laser/modulator according to the prior art,
- FIGS. 2A and 2B depict the perspective and cross-sectional view diagram of an integrated optical section comprising a wave guide with an InP window according to the prior art,
- FIG. 3 depicts the top view diagram of an integrated optical component according to the invention, this component being a laser/modulator,
- FIGS. 4A, 4B and 4C depict respectively sectional views along A-A, B-B and C-C according to FIG. 3,
- FIGS. 5A and 5B depict respectively the curves i and ii of the laser resonance signal.
- In the example given and which is illustrated by the diagrams of FIGS. 3, and 4A to 4C, the first section S1 of the component comprises the
wave guide 10 of a laser/modulator, while the second section S2, upstream, comprises thelaser 20. - The
wave guide 10 made of quaternary material such as InGaAsP has conventionally an H+ doped interface I with thelaser 20 and anoutput 12 in the plane of the output facet P of the component (cleavage plane). - The
wave guide 10 has a termination T comprising aninclined section 13 terminating in asection 14 which is laterally non-guiding for the signal originating from thenarrow section 13 of the guide. Thenon-guiding section 14 has, for this, a width E (for example 40 μm) greater than the width e of the narrow section of the guide (which is for example 3.5 μm). Thedistance 1 between the output G of thenarrow section 13 of the guide and the output facet P of the component is around 30 μm. This distance can be reduced to 15 μm. - In order to remove the parasitic capacity effects exhibited by the laterally
non-guiding section 14, the guide has preferably an isolation zone around the narrow output G, as can be seen in FIG. 4C. In practice, this isolation zone is obtained by H+ proton implantation. - The component can be implemented conventionally by any known epitaxy technique since a mask of suitable form (an angle of inclination with respect to the output facet and widening) is used for the etching of the active layer forming the guide which can be seen in FIG. 3.
- The widening of the termination of the guide is therefore obtained without interruption of the active layer 10 (the guiding layer), but simply by using a fabrication mask modified with respect to the masks commonly used. In fact the mask used for etching the active layer will have for example the form which can be seen in FIG. 3.
- Other variants as regards the form can be envisaged since they make it possible to remove the lateral guidance of the optical signal. In the example of FIG. 3, the
widened edge 11 of the active layer has an angle of 180° with the lateral edges of thesection 13. Thisedge 11 could for example have an angle greater than 180°. - Another variant can consist in taking an infinite width E, i.e., in practice, the
edge 11 of width E reaches the two lateral edges of the component (the edges perpendicular to the facet P). - As regards the inclined section of the guide, an inclination having an angle a with the output facet, of around 10°, has been chosen.
- Practically, the inclination comes in the form of a curve.
- The combination of the effects of the presence of a laterally non-guided section and a section inclined with respect to the output facet makes it possible to divert the part of the signal reflected by this facet and to diffract it.
- The amount of signal reflected and sent back into the narrower guided part is greatly reduced compared with the prior art.
- These results are illustrated by the curves i and ii of FIGS. 5A and 5B. The curves are given by way of example for a high level “1” modulation voltage V ON=0 V, and a low level “0”
voltage V OFF=−2 V and −1 V. - The curves i illustrate the oscillation at the resonant frequency of the laser caused by the return reflected signal for a component having a rectilinear structure such as that depicted in FIGS. 2A and 2B.
- The curves ii illustrate the signal at the resonant frequency of the laser with a component having a structure in accordance with the present invention. This figure shows that there is no oscillation.
Claims (4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9811964A FR2783933B1 (en) | 1998-09-24 | 1998-09-24 | INTEGRATED OPTICAL COMPONENT |
| FR9811964 | 1998-09-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20020061153A1 true US20020061153A1 (en) | 2002-05-23 |
| US6411763B1 US6411763B1 (en) | 2002-06-25 |
Family
ID=9530809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/401,295 Expired - Lifetime US6411763B1 (en) | 1998-09-24 | 1999-09-23 | Integrated optical component |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6411763B1 (en) |
| EP (1) | EP1003254B1 (en) |
| JP (1) | JP2000098161A (en) |
| KR (1) | KR20000023380A (en) |
| AT (1) | ATE245860T1 (en) |
| CA (1) | CA2282932A1 (en) |
| DE (1) | DE69909713T2 (en) |
| FR (1) | FR2783933B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2419033A (en) * | 2004-10-08 | 2006-04-12 | Agilent Technologies Inc | Laser/modulator assembly integrated along a common waveguide |
| EP2331995A4 (en) * | 2008-09-23 | 2017-11-22 | Syntune AB | Waveguide for extraction of light at low levels of reflection |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6438280B1 (en) * | 1999-12-23 | 2002-08-20 | Litton Systems, Inc. | Integrated optics chip having reduced surface wave propagation |
| US7190852B2 (en) * | 2002-10-15 | 2007-03-13 | Covega Corporation | Semiconductor devices with curved waveguides and mode transformers |
| KR100848759B1 (en) * | 2007-08-07 | 2008-07-25 | 김정수 | Semiconductor Laser Diode Chip with Multiple Waveguides |
| DE102008005114B4 (en) * | 2008-01-16 | 2010-06-02 | Eagleyard Photonics Gmbh | Device for frequency change |
| CN104081598A (en) * | 2012-01-30 | 2014-10-01 | 古河电气工业株式会社 | Semiconductor optical element, integrated semiconductor optical element, and semiconductor optical element module |
| US20230283046A1 (en) * | 2020-08-20 | 2023-09-07 | Nippon Telegraph And Telephone Corporation | Semiconductor Chip and Optical Module |
| WO2022184868A1 (en) * | 2021-03-05 | 2022-09-09 | Rockley Photonics Limited | Waveguide facet interface |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5392308A (en) * | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
| DE69603015T2 (en) * | 1995-03-07 | 1999-12-23 | British Telecommunications P.L.C., London | LASER |
| US6108481A (en) * | 1997-01-31 | 2000-08-22 | Kabushiki Kaisha Toshiba | Optical semiconductor device and its manufacturing method |
| US6091755A (en) * | 1997-11-21 | 2000-07-18 | Sdl, Inc. | Optically amplifying semiconductor diodes with curved waveguides for external cavities |
-
1998
- 1998-09-24 FR FR9811964A patent/FR2783933B1/en not_active Expired - Fee Related
-
1999
- 1999-09-22 JP JP11268148A patent/JP2000098161A/en active Pending
- 1999-09-22 KR KR1019990040893A patent/KR20000023380A/en not_active Withdrawn
- 1999-09-23 EP EP99402333A patent/EP1003254B1/en not_active Expired - Lifetime
- 1999-09-23 AT AT99402333T patent/ATE245860T1/en not_active IP Right Cessation
- 1999-09-23 US US09/401,295 patent/US6411763B1/en not_active Expired - Lifetime
- 1999-09-23 DE DE69909713T patent/DE69909713T2/en not_active Expired - Lifetime
- 1999-09-23 CA CA002282932A patent/CA2282932A1/en not_active Abandoned
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2419033A (en) * | 2004-10-08 | 2006-04-12 | Agilent Technologies Inc | Laser/modulator assembly integrated along a common waveguide |
| US20060078014A1 (en) * | 2004-10-08 | 2006-04-13 | Agilent Technologies, Inc. | Integrated modulator/laser assembly and a method of producing same |
| US7548574B2 (en) * | 2004-10-08 | 2009-06-16 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Integrated modulator/laser assembly and a method of producing same |
| GB2419033B (en) * | 2004-10-08 | 2009-12-09 | Agilent Technologies Inc | An integrated modulator / laser assembly and a method of producing same |
| EP2331995A4 (en) * | 2008-09-23 | 2017-11-22 | Syntune AB | Waveguide for extraction of light at low levels of reflection |
| US9921370B2 (en) | 2008-09-23 | 2018-03-20 | Syntune Ab | Waveguide for extraction of light at low levels of reflection |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000098161A (en) | 2000-04-07 |
| DE69909713T2 (en) | 2004-06-09 |
| DE69909713D1 (en) | 2003-08-28 |
| CA2282932A1 (en) | 2000-03-24 |
| FR2783933A1 (en) | 2000-03-31 |
| FR2783933B1 (en) | 2000-11-24 |
| US6411763B1 (en) | 2002-06-25 |
| EP1003254B1 (en) | 2003-07-23 |
| ATE245860T1 (en) | 2003-08-15 |
| EP1003254A1 (en) | 2000-05-24 |
| KR20000023380A (en) | 2000-04-25 |
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