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US20020008967A1 - Power module with a circuit arrangement comprising active semiconductor components and passive components, and method for producing same - Google Patents

Power module with a circuit arrangement comprising active semiconductor components and passive components, and method for producing same Download PDF

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Publication number
US20020008967A1
US20020008967A1 US09/341,527 US34152799A US2002008967A1 US 20020008967 A1 US20020008967 A1 US 20020008967A1 US 34152799 A US34152799 A US 34152799A US 2002008967 A1 US2002008967 A1 US 2002008967A1
Authority
US
United States
Prior art keywords
substrate
components
active semiconductor
semiconductor components
dcb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/341,527
Other languages
English (en)
Other versions
US6344973B1 (en
Inventor
Hans-Peter Feustel
Friedrich Loskarn
Reinhard Ruckert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA filed Critical Alcatel SA
Assigned to ALCATEL reassignment ALCATEL ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FEUSTEL, HANS PETER, LOSKARN, FRIEDRICH, RUCKERT, REINHARD
Publication of US20020008967A1 publication Critical patent/US20020008967A1/en
Granted legal-status Critical Current

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Classifications

    • H10W90/00—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
    • H10W72/07251—
    • H10W72/20—
    • H10W72/5363—
    • H10W72/884—
    • H10W90/734—
    • H10W90/754—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Power modules are used in many application fields for various tasks, for example, to control the speed and power of electric motors.
  • a circuit arrangement acting as power unit forms part of such power modules and typically has both active semiconductor components, such as power semiconductor components, and passive components, such as resistors (e.g., shunts for current measurement) and possibly capacitors.
  • the power semiconductor components work in switched mode, which causes high rates of current change. These high rates of current change necessitate a low-inductance structure of the circuit arrangement to prevent overvoltages.
  • the carrier element used for the circuit arrangement's active semiconductor components is typically a so-called DCB (direct copper bonding) substrate, which is made of a ceramic layer enclosed by two copper layers (e.g., made of aluminum oxide Al 2 O 3 ).
  • the active semiconductor components power semiconductor components
  • the upper copper layer of the DCB substrate is structured (interrupted) to form track conductors for connecting the power semiconductor components.
  • the DCB substrate is mounted on a metal plate serving as circuit substrate, typically soldered. This metal plate transfers the heat loss to a cooling system.
  • the circuit arrangement's passive components are advantageously realized in thick film technology (i.e., printed on a ceramic substrate).
  • This ceramic substrate in a separate manufacturing step, is bonded to the circuit substrate adjacent to the DCB substrate (e.g., by means of heat conductive bonding).
  • connection (contacting) between the circuit arrangement's passive components mounted on the ceramic substrates and the active semiconductor components mounted on the DCB substrates is problematic due to the spatial separation. This requires long connecting leads and connecting lugs, which as parasitic inductances have a negative effect on the properties of the circuit arrangement or power module (generation of overvoltages, EMV problems).
  • DE 35 38 933 A1 furthermore shows a power module in which the ceramic substrate carrying the passive components is soldered directly to the DCB substrate carrying the active semiconductor components.
  • the solder connection performs a pure fixation and heat conducting function.
  • the object of the invention is to define a power module in accordance with the preamble of claim 1 with a simple structure and manufacturing process, in which these disadvantages are obviated.
  • the passive components is realized by means of thick film technology (e.g., by depositing on a ceramic substrate a first print layer as the actual component and at least one additional print layer laterally adjacent to the first print layer acting as contact surface).
  • the ceramic substrate thus printed (the thick film circuit) is placed on the upper side of the DCB substrate (the upper copper layer) suitably structured to form track conductors and connecting surfaces and is connected with the DCB substrate by soldering the contact surface(s) to the corresponding connecting surfaces of the DCB substrate.
  • Connection (contacting) with the other semiconductor components arranged on the DCB substrate can be suitably effected either directly via track conductors or via bond wires.
  • the DCB substrate is suitably connected with the circuit substrate of the circuit arrangement, e.g., soldered to this circuit substrate (e.g., a metal plate). Power dissipation of the passive components (particularly resistors) arranged on the ceramic substrate is removed via the ceramic substrate and the DCB substrate to the circuit substrate.
  • the ceramic substrates with the passive components can be soldered to the circuit substrate simultaneously to soldering the active semiconductor components and/or simultaneously to soldering the DCB substrate to the circuit substrate so that no separate process step is required.
  • soldering the thick film circuit can be executed simultaneously with soldering the active semiconductor components to the DCB substrate or simultaneously with soldering the active semiconductor components to the DCB substrate and the DCB substrate to the circuit substrate.
  • FIGURE shows a schematic view of the structure of the power module in a sectional drawing.
  • the power module's circuit arrangement 1 disposed, for example, on a circuit substrate 2 with the dimensions 99 mm ⁇ 57 mm ⁇ 3 mm comprises, for example, a plurality of power semiconductor components 11 (power transistors and power diodes) and a plurality of resistors 10 as shunts for measuring the transistor currents.
  • the carrier element provided for the power semiconductor components 11 , which are implemented as semiconductor devices, and the resistors 10 , which are realized in thick film technology, is a DCB substrate 3 , which is composed of a first copper layer 32 (structured to form track conductors and connecting surfaces), a ceramic layer 31 formed as an oxide layer, and a second (unstructured) copper layer 33 .
  • the power semiconductor components 11 e.g., the power transistors and power diodes formed as semiconductor devices (semiconductor chips), are soldered to the connecting surfaces of the first copper layer 32 (i.e., to the upper side of the DCB substrate 3 ) by means of solder 15 and are mechanically connected by this soldering process with the DCB substrate 3 (of the first copper layer 32 ) (particularly for removal of their power dissipation) and are electrically conducted via bond wires 12 .
  • the resistors 10 from the resistor track 13 , the two contact surfaces 14 laterally adjoining the resistor track 13 (metallizations), and a protective layer (passivation) (not depicted) are printed on a ceramic substrate 21 .
  • This ceramic substrate 21 is soldered to the connecting surfaces provided for this purpose on the upper side of DCB substrate 3 (first copper layer 32 ) (by means of solder 15 ).
  • this soldering process is preferably carried out simultaneously to soldering the power semiconductor components 11 onto DCB substrate 3 and DCB substrate 3 with the mounted active semiconductor components 11 and passive components 10 is subsequently soldered to circuit substrate 2 , which is formed, for example, by a metallic copper plate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)
  • Structure Of Printed Boards (AREA)
US09/341,527 1997-01-14 1998-01-14 Power module with a circuit arrangement comprising active semiconductor components and passive components, and method for producing same Granted US20020008967A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19700963.8 1997-01-14
DE19700963A DE19700963C2 (de) 1997-01-14 1997-01-14 Verfahren zur Herstellung eines Leistungsmoduls mit einer aktive Halbleiterbauelemente und passive Halbleiterbauelemente aufweisenden Schaltungsanordnung

Publications (1)

Publication Number Publication Date
US20020008967A1 true US20020008967A1 (en) 2002-01-24

Family

ID=7817310

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/341,527 Granted US20020008967A1 (en) 1997-01-14 1998-01-14 Power module with a circuit arrangement comprising active semiconductor components and passive components, and method for producing same
US09/341,527 Expired - Fee Related US6344973B1 (en) 1997-01-14 1998-01-14 Power module with a circuit arrangement comprising active semiconductor components and passive components, and method for producing same

Family Applications After (1)

Application Number Title Priority Date Filing Date
US09/341,527 Expired - Fee Related US6344973B1 (en) 1997-01-14 1998-01-14 Power module with a circuit arrangement comprising active semiconductor components and passive components, and method for producing same

Country Status (5)

Country Link
US (2) US20020008967A1 (de)
EP (1) EP1008231A2 (de)
JP (1) JP2001508240A (de)
DE (1) DE19700963C2 (de)
WO (1) WO1998032213A2 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065469A3 (de) * 2002-02-01 2004-02-19 Conti Temic Microelectronic Leistungsmodul
US20040183209A1 (en) * 2003-03-17 2004-09-23 Megic Corporation High performance IC chip having discrete decoupling capacitors attached to its IC surface
US20050237536A1 (en) * 2004-04-22 2005-10-27 Hill Henry A Interferometry systems and methods of using interferometry systems
US20050254220A1 (en) * 2002-07-08 2005-11-17 Siemens Aktiengesellschaft Electronics unit
US20070262457A1 (en) * 1998-12-21 2007-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
CN109671633A (zh) * 2017-10-17 2019-04-23 株洲中车时代电气股份有限公司 一种高压igbt衬板绝缘方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1818980A3 (de) * 1999-06-22 2010-08-11 Infineon Technologies AG Substrat für Hochspannungsmodule
DE10024516B4 (de) * 2000-05-18 2006-03-09 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleitermodul
US6940164B1 (en) 2000-08-18 2005-09-06 Mitsubishi Denki Kabushiki Kaisha Power module
DE10062108B4 (de) * 2000-12-13 2010-04-15 Infineon Technologies Ag Leistungsmodul mit verbessertem transienten Wärmewiderstand
DE10158185B4 (de) * 2000-12-20 2005-08-11 Semikron Elektronik Gmbh Leistungshalbleitermodul mit hoher Isolationsfestigkeit
DE10063714C2 (de) * 2000-12-20 2002-11-07 Semikron Elektronik Gmbh Leistungshalbleitermodul mit hoher Isolationsfestigkeit
DE10117775A1 (de) * 2001-04-09 2002-10-17 Abb Research Ltd Leistungshalbleitermodul sowie Verfahren zum Herstellen eines solchen Leistungshalbleitermoduls
US20040174954A1 (en) * 2001-06-28 2004-09-09 Rust Johan Willem Medical x-ray device and power module therefor
DE10213648B4 (de) * 2002-03-27 2011-12-15 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
US6797889B1 (en) * 2002-05-30 2004-09-28 Johnson Controls Automotive Electronics Assembly of power circuits and numerical data printed on a multilayer board
DE10229337B4 (de) * 2002-06-29 2007-04-05 Robert Bosch Gmbh Elektronische Baugruppe
US6775145B1 (en) * 2003-05-14 2004-08-10 Cyntec Co., Ltd. Construction for high density power module package (case II)
US7243421B2 (en) * 2003-10-29 2007-07-17 Conductive Inkjet Technology Limited Electrical connection of components
JP4091562B2 (ja) * 2004-03-29 2008-05-28 ファナック株式会社 モータ駆動装置
DE102006021412B3 (de) * 2006-05-09 2007-11-15 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
JP5261982B2 (ja) 2007-05-18 2013-08-14 富士電機株式会社 半導体装置及び半導体装置の製造方法
DE102008026347B4 (de) 2008-05-31 2010-08-19 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Anordnung mit einem Substrat und einem Grundkörper
DE102012106135A1 (de) * 2012-07-09 2014-05-22 Cryoelectra Gmbh Planarer Symmetrierübertrager mit verbesserter Wärmeabführung
US10242969B2 (en) * 2013-11-12 2019-03-26 Infineon Technologies Ag Semiconductor package comprising a transistor chip module and a driver chip module and a method for fabricating the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4410874A (en) * 1975-03-03 1983-10-18 Hughes Aircraft Company Large area hybrid microcircuit assembly
US4658332A (en) * 1983-04-04 1987-04-14 Raytheon Company Compliant layer printed circuit board
DE3538933A1 (de) * 1985-11-02 1987-05-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul
JPH0714105B2 (ja) * 1986-05-19 1995-02-15 日本電装株式会社 混成集積回路基板及びその製造方法
US5119272A (en) * 1986-07-21 1992-06-02 Mitsumi Electric Co., Ltd. Circuit board and method of producing circuit board
US4788524A (en) * 1987-08-27 1988-11-29 Gte Communication Systems Corporation Thick film material system
JPH0376201A (ja) * 1989-08-07 1991-04-02 Ford Motor Co 層状厚膜抵抗器及びその製造方法
US5621701A (en) * 1989-08-10 1997-04-15 Lockheed Martin Tactical Systems, Inc. Controlled compliance acoustic baffle
US5291375A (en) * 1991-09-30 1994-03-01 Kabushiki Kaisha Toshiba Printed circuit board and electric device configured to facilitate bonding
US5276423A (en) * 1991-11-12 1994-01-04 Texas Instruments Incorporated Circuit units, substrates therefor and method of making
US5818699A (en) * 1995-07-05 1998-10-06 Kabushiki Kaisha Toshiba Multi-chip module and production method thereof
US5621240A (en) * 1995-09-05 1997-04-15 Delco Electronics Corp. Segmented thick film resistors
US5872403A (en) * 1997-01-02 1999-02-16 Lucent Technologies, Inc. Package for a power semiconductor die and power supply employing the same
US5855995A (en) * 1997-02-21 1999-01-05 Medtronic, Inc. Ceramic substrate for implantable medical devices
CA2255441C (en) * 1997-12-08 2003-08-05 Hiroki Sekiya Package for semiconductor power device and method for assembling the same

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070284752A1 (en) * 1998-12-21 2007-12-13 Mou-Shiung Lin Top layers of metal for high performance IC's
US8415800B2 (en) 1998-12-21 2013-04-09 Megica Corporation Top layers of metal for high performance IC's
US8531038B2 (en) 1998-12-21 2013-09-10 Megica Corporation Top layers of metal for high performance IC's
US8471384B2 (en) 1998-12-21 2013-06-25 Megica Corporation Top layers of metal for high performance IC's
US20070290358A1 (en) * 1998-12-21 2007-12-20 Mou-Shiung Lin Top layers of metal for high performance IC's
US20070262457A1 (en) * 1998-12-21 2007-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US20070262456A1 (en) * 1998-12-21 2007-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US20070267714A1 (en) * 1998-12-21 2007-11-22 Mou-Shiung Lin Top layers of metal for high performance IC's
US20070273033A1 (en) * 1998-12-21 2007-11-29 Mou-Shiung Lin Top layers of metal for high performance IC's
US20070278686A1 (en) * 1998-12-21 2007-12-06 Mou-Shiung Lin Top layers of metal for high performance IC's
US20070281458A1 (en) * 1998-12-21 2007-12-06 Mou-Shiung Lin Top layers of metal for high performance IC's
US20070288880A1 (en) * 1998-12-21 2007-12-13 Mou-Shiung Lin Top layers of metal for high performance IC's
US8022545B2 (en) 1998-12-21 2011-09-20 Megica Corporation Top layers of metal for high performance IC's
US7999384B2 (en) 1998-12-21 2011-08-16 Megica Corporation Top layers of metal for high performance IC's
US7884479B2 (en) 1998-12-21 2011-02-08 Megica Corporation Top layers of metal for high performance IC's
US20090045516A1 (en) * 1998-12-21 2009-02-19 Megica Corporation TOP LAYERS OF METAL FOR HIGH PERFORMANCE IC's
US7863654B2 (en) 1998-12-21 2011-01-04 Megica Corporation Top layers of metal for high performance IC's
WO2003065469A3 (de) * 2002-02-01 2004-02-19 Conti Temic Microelectronic Leistungsmodul
US7215023B2 (en) 2002-02-01 2007-05-08 Conti Temic Microelectronic Gmbh Power module
US7453145B2 (en) 2002-07-08 2008-11-18 Siemens Aktiengesellschaft Electronics unit
US20050254220A1 (en) * 2002-07-08 2005-11-17 Siemens Aktiengesellschaft Electronics unit
US20040183209A1 (en) * 2003-03-17 2004-09-23 Megic Corporation High performance IC chip having discrete decoupling capacitors attached to its IC surface
US8368150B2 (en) * 2003-03-17 2013-02-05 Megica Corporation High performance IC chip having discrete decoupling capacitors attached to its IC surface
US20050237536A1 (en) * 2004-04-22 2005-10-27 Hill Henry A Interferometry systems and methods of using interferometry systems
CN109671633A (zh) * 2017-10-17 2019-04-23 株洲中车时代电气股份有限公司 一种高压igbt衬板绝缘方法

Also Published As

Publication number Publication date
US6344973B1 (en) 2002-02-05
WO1998032213A2 (de) 1998-07-23
JP2001508240A (ja) 2001-06-19
WO1998032213A3 (de) 1999-03-18
EP1008231A2 (de) 2000-06-14
DE19700963A1 (de) 1998-07-16
DE19700963C2 (de) 2000-12-21

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