US20010050413A1

US20010050413A1 - Method of controlling striations and CD loss in contact oxide etch

Info

Publication number: US20010050413A1
Application number: US09/902,691
Authority: US
Inventors: Li Li; Bradley Howard
Original assignee: Individual
Current assignee: Individual
Priority date: 1999-04-15
Filing date: 2001-07-12
Publication date: 2001-12-13
Also published as: US20050056875A1; US6335292B1; US20060252198A1; US6716763B2; US8093155B2; US7470625B2; US20090081877A1; US20030096506A1; US20020019140A1; US7122480B2; US6753264B2

Abstract

A method for controlling striations and CD loss in a plasma etching method is disclosed. During the etching process, the substrate of semiconductor material to be etched is exposed first to plasma under a low power strike and subsequently to a conventional high power strike. CD loss has been found to be reduced by about 400 Angstroms and striations formed in the contact holes are reduced.

Description

FIELD OF THE INVENTION

The present invention relates to the fabrication of integrated circuit devices and, in particular, to a method for controlling striations and CD loss in the integrated circuit during an etching process.

BACKGROUND OF THE INVENTION

Semiconductor integrated circuits are typically fabricated on a wafer or substrate of a semiconductor material such as, for example, silicon or gallium arsenide. During the fabrication, the wafer is subjected to a sequence of steps, which may include photomasking, material deposition, oxidation, nitridization, ion implantation, diffusion, and etching, among others.

Etching may be achieved by wet etching processes or dry etching processes. Dry etch processes, such as a plasma etch or ion-assisted etch, are known for etching materials for semiconductor fabrication in silicon integrated circuit technology. Plasma etches are largely anisotropic or unidirectional. Plasma etches may be used to create spaces or substantially vertical sidewalls in the integrated circuit layers, to transfer a mask pattern to an underlying layer with little or no undercutting beneath mask segment edges and to create contact paths in insulative layers. Plasma etch processes are especially useful for producing sub-quarter micrometer patterns and geometries.

Semiconductor integrated circuits with high device density require the patterning of closely spaced submicrometer lines in semiconductors materials to form submicron geometries such as small area emitters for bipolar transistors, short gates for field effect transistors and narrow interconnection lines between devices. The formation of such polysilicon, metal or insulator structures typically requires definition of the locations of such structures in a layer of photoresist on a layer of polysilicon or insulator by exposure of the photoresist with light passing through a reticle or photomask containing the desired pattern. After exposure and treatment of the photoresist, the underlying layer of the substrate is plasma etched using the patterned photoresist as a template. The masking material protects designated areas of the substrate from the etch process. Subsequent processing steps are determined according to the type of device to be fabricated.

As advances in photolithographic and processing capabilities progressively increase, the lateral dimensions of features in silicon integrated circuits continue to decrease. Fabrication of reduced device geometries in integrated circuits mandates minute contact holes of submicron size on insulation layers and minimum isolation distance requirements measured in terms of critical dimensions (CD). For example, recent generations of complementary metal-oxide silicon integrated circuits (CMOS) have gate regions with dimensions on the order of 0.25 microns, or even 0.18 microns and less in the near future.

As the integrated circuit manufacture goes to the sub-quarter regime, a challenge to the high aspect ratio is that the deep ultraviolet (DUV) resist needed to pattern the integrated circuit is thinner and more malleable than prior photoresists. Large striations and uncontrolled increases in the size of the contact holes, known as CD losses, are common during the photolithographic process in the sub-quarter micron regime.

During photolithography, problems arise because high resolution submicrometer images in photoresist require shallow depth of focus during exposure, but thick photoresist patterns are required because of the poor etch rate between the photoresist and the underlying semiconductor layer. Additional problems occur because of the uncontrolled bake during the plasma etch processing. During this process, the substrate is exposed to ion and electron bombardment, UV light, X-rays, and scattered radiations. As a consequence, irregular topographies, distorted images and CD loss occurs during the exposure of the photoresist layer as shown in FIGS. 1-2. These figures illustrate a typical plasma etch of a silicon substrate 40 having an oxide layer 42 deposited thereon. Contact

holes

10, 12, 14 are etched into wafer 10. The

contact holes

10, 12, 14 have an upper surface 38 and a lower surface 36. Due, in part, to the thin DUV resist and the uncontrolled bake during the etching process,

discontinuities

18, 20, 22, 24, 26, 28, 30 and 46 are formed as shown for contact hole 10. The

discontinuities

18, 20, 22, 24, 26, 28, 30, 46 occur in the

contact hole

12, 14 as a result of the plasma etch attacking the side walls of the

contact holes

12, 14. It should be understood that the shape and number of the discontinuities will vary depending upon the specific etching process parameters as well as the material which is being etched. The discontinuities may form which have a first surface 32 and a second surface 34 in the wall 44 of the contact hole 12. In addition,

contact holes

10, 12, 14 are formed in a frusto-conical shape instead of a cylindrical shape when formed in the oxide layer 42.

When two

discontinuities

22, 46 are formed in

adjacent contact holes

12, 14 and become aligned with one another, the integrated circuit suffers a loss in critical dimension (CD loss). CD loss is a critical component of integrated circuit design, especially in the sub-quarter micron regime. Additionally, when the

contact holes

10, 12, 14 are formed in a frusto-conical shape instead of the desired cylindrical shape, surface area is sacrificed thereby requiring the

contact holes

10, 12, 14 to be deeper to effectuate the same contact.

A further problem with the prior plasma etching is that as a result of the

irregular contact holes

10, 12, 14, an unwanted and uncontrolled increase in the diameter of the

contact holes

10, 12, 14 may also result. This increased size also impacts the displacement of the metal atoms that fill the contact holes. Thus, in addition to the loss in critical dimension, electrical contacts may also become unreliable.

Several attempts have been made to solve this problem. It has been suggested that the distorted images can be alleviated by employing a three-layer photoresist technique such as in U.S. Pat. No. 5,242,532 (Cain) or by employing a silylation layer process such as in U.S. Pat. No. 5,312,717 (Sachdev et al.). These solutions, however, require additional time consuming and costly steps in the etching process.

Accordingly, there is a need for improved plasma etching that provides a substantially uniform etch without a reduction in the critical dimension and without striations formed in the sidewalls of the etched portion of the substrate. The improved plasma etching technique should provide a substrate having increased uniformity across the substrate surface, a substantially uniform trench, a substantially uniform profile angle and a smooth sidewall.

SUMMARY OF THE INVENTION

The present invention provides a plasma etching process that reduces the striations and the CD loss between two contact holes in a substrate. The present invention provides an etching process in which the substrate of semiconductor material to be etched is formed with a substantially uniform etch without a reduction in the critical dimension and without striations formed in the sidewalls. The method of the present invention includes exposing a substrate to be etched to a first plasma under low-power, preferably at about radio frequency (RF) 150 W and then subsequently contacting the substrate to a conventional high power etch, preferably at about RF 950 W. Additional advantages of the present invention will be apparent from the detailed description and drawings, which illustrate preferred embodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a semiconductor having three contact holes etched therein according to a method the present invention overcomes. [0013]
FIG. 2 is a partial cross-sectional view taken along line II-II of FIG. [0014]
FIG. 3 is a top view of a semiconductor having three contact holes etched therein according to the present invention. [0015]
FIG. 4 is a cross-sectional view taken along the line IV-IV of FIG. 3. [0016]
FIGS. 5 a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention at an intermediate stage of processing. [0017]
FIG. 6 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 5. [0018]
FIG. 7 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 6. [0019]
FIG. 8 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 7. [0020]
FIG. 9 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 8. [0021]
FIG. 10 a diagrammatic cross-sectional view of a semiconductor wafer according to a second embodiment of the present invention at an intermediate stage of processing. [0022]
FIG. 11 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 10. [0023]
FIG. 12 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 11. [0024]
FIG. 13 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 12. [0025]
FIG. 14 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 13. [0026]
FIG. 15 is a diagrammatic cross-sectional view of a semiconductor wafer according to the present invention subsequent to that shown in FIG. 14.[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following detailed description, reference is made to various specific embodiments in which the invention may be practiced. These embodiments are described with sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be employed, and that structural, logical, and electrical changes may be made. [0028]
The terms “wafer” or “substrate” used in the following description may include any semiconductor-based structure that has an exposed silicon surface. Wafer and structure must be understood to include silicon-on insulator (SOI), silicon-on sapphire (SOS), doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. The semiconductor need not be silicon-based. The semiconductor could be silicon-germanium, germanium, or gallium arsenide. When reference is made to a wafer or substrate in the following description, previous process steps may have been utilized to form regions or junctions in the base semiconductor or foundation. The following detailed description may not be taken, therefore, in a limiting sense, and the scope of the present invention is defined by the appended claims. [0029]
The present invention relates to a method for plasma etching a semiconductor substrate which includes adding a low power strike step before the main plasma etching. The method reduces striations formed in the substrate and decreases the CD loss. As discussed in more detail below, the present invention is an improved plasma etching process in a high-density-source plasma reactor, i.e., one which uses a remote source to generate a plasma and which also uses a high-frequency bias power on the substrate. During the low power strike, it is believed that the photoresist lateral erosion is slowed while the resist is cured by UV radiation from the low power plasma. This additional step has been shown to decreases the CD loss by about 400 Angstroms and also reduce the striations in the etched semiconductor substrate. [0030]
Plasma etch systems are mainly vacuum chambers in which a glow discharge produces a plasma consisting of chemically reactive species such as atoms, radicals, and ions from a relatively inert molecular gas. These reactive species interact either kinetically or chemically with the material to be etched. The plasma etching gas may be any gaseous material known for etching. Examples of suitable plasma etching gases are those such as HBr, Cl, fluorocarbon containing gases and the like. It should be understood that the selection of the plasma etching gas will be determined by the substrate to the etched as well as the physical parameters of the etching process such as power, pressure, temperature and the like. Examples of some preferred gases for use with the present invention include: HBr, Cl[0031] ₂carbon tetrafluoride (CF₄) trifluoromethane (CHF3) and the like. The etching gas may be used alone or in combination with other etching gases and may also be used in conjunction with an inert gas, such as argon or helium, to dilute the etching gases and to enhance the uniformity of the surface being etched.
The etching process of the present invention is carried out in a high density plasma (HDP) reactor such as an enhanced reactive ion etch. A reactive ion etch is a combination of chemical plasma etching, in which a plasma etches by chemically reacting with the substrate, and ion beam etching, which is a physical process using high energy ions to bombard the substrate in order to etch it. An explanation of plasma etching techniques may be found in U.S. Pat. No. 5,662,770 and U.S. Pat. No. 5,843,226 which are herein incorporated by reference. [0032]
Referring now to the drawings, where like elements are designated by like reference numerals. A representative substrate etched according to the present invention is illustrated in FIGS. [0033] 3-4. These figures show a wafer 100 formed of a substrate 116 having an oxide layer 118 which has cylindrical contact holes 110, 112, 114 formed therein by the method of the present invention as described in more detail below. The contact holes 110, 112, 114 have a uniform shape and the critical dimension between the contact holes 110, 112, 114 is maintained.
Reference is now made to FIG. 5. A [0034] photoresist layer 120 is applied over a substrate 100. A UV mask 122 is placed over the photoresist layer 120. The mask 122 has areas 124 which allow UV light 128 to pass through and contact the photoresist layer 120. The mask also includes areas 126 which block the UV light 128 from contacting the photoresist layer 120. The UV light 128 contacts the photoresist layer 120 and develops the photoresist layer 120 under regions 124 of the UV mask 122 leaving developed photoresist areas 130 as shown in FIG. 6.
The UV light causes the exposed [0035] photoresist 130 to undergo chemical changes and become more acidic. After pattern generation, the exposed (acidic) photoresist layer 130 is removed with a base solution leaving the structure as shown in FIG. 7. Since the photoresist layer 120 is substantially resistant to etching, certain portions of the substrate 116 covered by the photoresist patterns 120 are substantially not etched during the etching of the substrate. The substrate is then placed in a plasma reactor. The substrate is contacted with a low power plasma and the lateral erosion of the photoresist layer 120 is slowed while the photoresist layer 120 is cured by UV radiation from the low power plasma. The substrate is contacted with the low power plasma in the plasma reactor for about 3 to about 10 seconds, preferably for about 5 seconds.
The plasma etching gas may be any gaseous material known for etching. Examples of suitable plasma etching gases are those such as HBr, Cl, fluorocarbon containing gases and the like. It should be understood that the selection of the plasma etching gas will be determined by the substrate to the etched as well as the physical parameters of the etching process such as power, pressure, temperature and the like. Examples of some preferred gases for use with the present invention include: HBr, Cl[0036] ₂carbon tetrafluoride (CF₄) trifluoromethane (CHF3) and the like. The low power plasma is formed at low power, such as, for example, 100 to about 250 watts (RF), preferably about 150 watts.
According to a preferred embodiment, the plasma etching process uses a process gas that comprises a mixture of two fluorocarbons, preferably carbon tetrafluoride (CF[0037] ₄) and trifluoromethane (CHF3). The etching gas mixture flows into the reactor at a rate of approximately 50 standard cubic centimeters per minute (sccm) to form a plasma (glow discharge) over the substrate. A diluent gas such as argon also flows into the reactor at approximately 80 sccm. The preferred pressure in the etch chamber is about 120 mTorr, and the preferred cathode temperature is about 20 degree(s) C.
Reference is now made to FIG. 8. The [0038] substrate 116 is then etched out by a directional etching process such as reactive ion etching. Etching is continued down to the level of the substrate to form a set of trenches 132, 134 136. The plasma etching is carried out under ordinary high power etching conditions. The plasma etch may be formed at a power of from about 800 to about 1100 watts (RF), preferably at from about 950 watts. Any suitable etching gas may be used in accordance with the present invention. Preferably, the same etching gases used in the low power plasma etching step are used in the high power plasma etching. In fact, it is an advantage of the present invention that the plasma etching parameters, such as gas composition, reactor pressure and the like do not need to be modified. This allows the present invention to efficiently etch the substrate 116 without the need for additional time consuming processing steps. The substrate can be contacted with the high power etch for any time sufficient to etch the underlying substrate. It should be understood that these times may vary from about 30 seconds to over 500 seconds, depending upon the substrate, the etching gas and the physical parameters of the plasma etch. The additional photoresist 120 is then removed from the substrate 116 to arrive at the device shown in FIG. 9.
As the etching process goes to the sub-quarter regime, the [0039] photoresist layer 120 must be robust enough to withstand reactive ion etching. However, due to enhanced ion bombardment near the trench 132, 134, 136 corners, the photoresist layer 120 becomes thinner and softer and it looses its resistance to chemical etching when exposed to UV light. The present invention cures the photoresist layer 120 with a low power plasma etch step reducing the lateral erosion of the photoresist layer 120. This additional low power strike eliminates striation in the trench walls and has been found to reduce CD loss by 400 angstroms.
The invention is further explained with reference to the following example. This invention is not intended to be limited by the particular example described below. The Example is also described with reference to FIGS. [0040] 10-15. As a preferred embodiment, a combination of the following set of initial etch parameters in the first four steps of the plasma etching process may be used.
Reference is made to FIG. 10. A [0041] wafer 200 including a substrate 216 having formed thereon an oxide layer 218 and a bottom antireflective coating (BARC) layer 202. A photoresist layer 220 is applied over a substrate 200. A UV mask 222 is placed over the photoresist layer 220. The mask 222 has areas 224 which allow UV light 228 to pass through and contact the photoresist layer 220. The mask also includes areas 226 which block the UV light 228 from contacting the photoresist layer 220. The UV light 228 contacts the photoresist layer 220 and develops the photoresist layer 220 under regions 224 of the UV mask 222 leaving developed photoresist areas 230 as shown in FIG. 11. After pattern generation, the exposed (acidic) photoresist layer 230 is removed with a base solution leaving the structure as shown in FIG. 12.
The [0042] substrate 200 is then placed in a plasma reactor and allowed to stabilize at the following conditions for about 10 seconds:

Pressure: 120 mTorr

RF Power: 0 Watts

Magnetic Field: 0 Gauss

Cathode Temperature: 20 Celsius

Gas flows: CF₄ 50 sccm

CHF₃ 50 sccm

Ar 80 sccm

The

substrate

200 is then contacted with a low power plasma under the following conditions for about 5 seconds:



Pressure:	120 mTorr
RF Power:	150 Watts, AUTO
Magnetic Field:	0 Gauss
Cathode Temperature:	20 Celsius
Gas flows:	CF₄	50 sccm
	CHF₃	50 sccm
	Ar	80 sccm

Reference is now made to FIG. 13. After the low power plasma etch,

BARC layer

202 is plasma etched under the following conditions for about 60 seconds:



Pressure:	120 mTorr
RF Power:	950 Watts, AUTO
Magnetic Field:	0 Gauss
Cathode Temperature:	20 Celsius
Gas flows:	CF₄	50 sccm
	CHF₃	50 sccm
	Ar	80 sccm

Reference is now made to FIG. 14. After the BARC etch,

oxide layer

218 is etched in an oxide main etch step to form

trenches

232, 234 and 236. The oxide layer 218 is plasma etched under the following conditions for about 280 seconds:



Pressure:	120 mTorr
RF Power:	950 Watts, AUTO
Magnetic Field:	0 Gauss
Cathode Temperature:	20 Celsius
Gas flows:	CF₄	15 sccm
	CHF₃	80 sccm
	Ar	140 sccm

The [0046] photoresist layer 220 is removed with subsequent processing and the resultant substrate 200 is illustrated in FIG. 15. By adding a low power strike before the BARC etch, the striations in the substrate 200 are significantly reduced, and the CD loss is reduced by about 400 Angstroms compared to a similar process without the low power plasma etch.
The above description illustrates preferred embodiments which achieve the objects, features and advantages of the present invention. It is not intended that the present invention be limited to the illustrated embodiments. Any modification of the present invention that comes within the spirit and scope of the following claims should be considered part of the present invention.[0047]

Claims

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A method for etching a substrate, comprising:

placing a substrate into a reactive chamber;

introducing into said chamber an etching gas;

generating a plasma of said etching gas at a first power level and contacting said substrate with said first power level plasma for a first predetermined time; and,

generating a plasma of said etching gas at a second power level in said chamber and contacting said substrate with said second power level plasma for a second predetermined time, wherein said second power level plasma is a high power plasma and is greater than said first power level plasma, which is a low power plasma.

2. The method according to

claim 1

, wherein said low power plasma is from about 100 Watts to about 250 Watts.

3. The method according to

claim 1

, wherein said low power plasma is about 150 Watts.

4. The method according to

claim 1

, wherein said first predetermined time is from about 3 seconds to about 10 seconds.

5. The method according to

claim 1

, wherein said first predetermined time is about 5 seconds.

6. The method according to

claim 1

, wherein said high power plasma is from about 800 Watts to about 1100 Watts.

7. The method according to

claim 1

, wherein said high power plasma is about 950 Watts.

8. The method according to

claim 1

, wherein said second predetermined time is from about 30 seconds to about 260 seconds.

9. The method according to

claim 1

, wherein said second predetermined time is about 60 seconds.

10. The method according to

claim 1

, wherein said low power and said high power plasmas of said etching gas are selected from the group consisting of Cl₂, HBr, CF₄, CHF₃, CH₂F₂and inert gases.

11. The method according to

claim 10

, wherein said low power plasma is CF₄, CHF₃and an inert gas.

12. The method according to

claim 10

, wherein said high power plasma is CF₄, CHF₃and an inert gas.

13. The method according to

claim 10

, wherein said low power and said high power plasmas are CF₄, CHF₃and Ar.

14. The method according to

claim 10

, wherein said low power and said high power plasmas are CF₄, CHF₃and He.

15. The method according to

claim 1

, wherein said substrate is a silicon-based substrate.

16. The method according to

claim 15

, wherein said substrate has an oxide layer formed over said substrate.

17. The method according to

claim 1

, wherein said substrate is a germanium substrate.

18. The method according to

claim 17

, wherein said substrate has an oxide layer formed over said substrate.

19. The method according to

claim 1

, wherein said substrate is a gallium arsenide substrate.

20. The method according to

claim 19

, wherein said substrate has an oxide layer formed over said substrate.

21. A method for reducing striations formed by the plasma etching of a substrate, comprising:

placing a substrate into a reactive chamber;

introducing into said chamber an etching gas;

22. The method according to

claim 21

, wherein said low power plasma is from about 100 Watts to about 250 Watts.

23. The method according to

claim 21

, wherein said low power plasma is about 150 Watts.

24. The method according to

claim 21

25. The method according to

claim 21

, wherein said first predetermined time is about 5 seconds.

26. The method according to

claim 21

, wherein said high power plasma is from about 800 Watts to about 1100 Watts.

27. The method according to

claim 21

, wherein said high power plasma is about 950 Watts.

28. The method according to

claim 21

29. The method according to

claim 21

, wherein said second predetermined time is about 60 seconds.

30. The method according to

claim 21

31. The method according to

claim 30

, wherein said low power plasma is CF₄, CHF₃and an inert gas.

32. The method according to

claim 30

, wherein said high power plasma is CF₄, CHF₃and an inert gas.

33. The method according to

claim 30

, wherein said low power and said high power plasmas are CF₄, CHF₃and Ar.

34. The method according to

claim 30

, wherein said low power and said high power plasmas are CF₄, CHF₃and He.

35. The method according to

claim 21

, wherein said substrate is a silicon-based substrate.

36. The method according to

claim 35

, wherein said substrate has an oxide layer formed over said substrate.

37. The method according to

claim 21

, wherein said substrate is a germanium substrate.

38. The method according to

claim 37

, wherein said substrate has an oxide layer formed over said substrate.

39. The method according to

claim 21

, wherein said substrate is a gallium arsenide substrate.

40. The method according to

claim 39

, wherein said substrate has an oxide layer formed over said substrate.

41. A method for reducing CD loss in an etched semiconductor substrate, comprising:

placing a substrate into a reactive chamber;

introducing into said chamber an etching gas;

generating a plasma of said etching gas at a first power level and contacting said substrate with said first power level plasma for a time of from about 3 to about 10 seconds; and,

generating a plasma of said etching gas at a second power level in said chamber and contacting said substrate with said second power level plasma for a time of from about 20 to about 260 seconds, wherein said second power level plasma is a high power plasma and is greater than said first power level plasma, which is a low power plasma.

42. The method according to

claim 41

, wherein said low power plasma is from about 100 Watts to about 250 Watts.

43. The method according to

claim 41

, wherein said low power plasma is about 150 Watts.

44. The method according to

claim 41

, wherein said substrate is contacted with said low power plasma for about 5 seconds.

45. The method according to

claim 41

, wherein said high power plasma is from about 800 Watts to about 1100 Watts.

46. The method according to

claim 41

, wherein said high power plasma is about 950 Watts.

47. The method according to

claim 41

, wherein said substrate is contacted with said high power plasma for about 60 seconds.

48. The method according to

claim 41

49. The method according to

claim 48

, wherein said low power plasma is CF₄, CHF₃and an inert gas.

50. The method according to

claim 48

, wherein said high power plasma is CF₄, CHF₃and an inert gas.

51. The method according to

claim 48

, wherein said low power and said high power plasmas are CF₄, CHF₃and Ar.

52. The method according to

claim 48

, wherein said low power and said high power plasmas are CF₄, CHF₃and He.

53. The method according to

claim 41

, wherein said substrate is a silicon-based substrate.

54. The method according to

claim 53

, wherein said substrate has an oxide layer formed over said substrate.

55. The method according to

claim 41

, wherein said substrate is a germanium substrate.

56. The method according to

claim 55

, wherein said substrate has an oxide layer formed over said substrate.

57. The method according to

claim 41

, wherein said substrate is a gallium arsenide substrate.

58. The method according to

claim 57

, wherein said substrate has an oxide layer formed over said substrate.

59. An integrated circuit substrate having improved CD loss and reduced striations formed by a method, comprising:

placing said integrated circuit substrate into a reactive chamber;

introducing into said chamber an etching gas;

generating a plasma of said etching gas at a second power level in said chamber and contacting said integrated circuit substrate with said high power plasma for a second predetermined time, wherein said second power level plasma is a high power plasma and is greater than said first power level plasma, which is a low power plasma.

60. The integrated circuit substrate according to

claim 59

, wherein said substrate is a silicon-based substrate.

61. The integrated circuit substrate according to

claim 60

, wherein said substrate has an oxide layer formed over said substrate.

62. The integrated circuit substrate according to

claim 59

, wherein said substrate is a germanium substrate.

63. The integrated circuit substrate according to

claim 62

, wherein said substrate has an oxide layer formed over said substrate.

64. The integrated circuit substrate according to

claim 59

, wherein said substrate is a gallium arsenide substrate.

65. The integrated circuit substrate according to

claim 64

, wherein said substrate has an oxide layer formed over said substrate.

66. The integrated circuit substrate according to

claim 65

, wherein said substrate further has an antireflective coating thereon.

67. The integrated circuit substrate according to

claim 59

, wherein said substrate is a DRAM substrate.

68. The integrated circuit substrate according to

claim 59

, wherein said low power plasma is from about 100 Watts to about 250 Watts.

69. The integrated circuit substrate according to

claim 59

, wherein said low power plasma is about 150 Watts.

70. The integrated circuit substrate according to

claim 59

71. The integrated circuit substrate according to

claim 59

, wherein said first predetermined time is about 5 seconds.

72. The integrated circuit substrate according to

claim 59

, wherein said high power plasma is from about 800 Watts to about 1100 Watts.

73. The integrated circuit substrate according to

claim 59

, wherein said high power plasma is about 950 Watts.

74. The integrated circuit substrate according to

claim 59

, wherein said second predetermined time is from about 40 seconds to about 90 seconds.

75. The integrated circuit substrate according to

claim 59

, wherein said second predetermined time is about 60 seconds.

76. The integrated circuit substrate according to

claim 59

, wherein said low power and said high power plasmas of said etching gas are selected from the group consisting of Cl₂, HBr, CF₄, CHF₃, CH₂F₂, and inert gases.

77. The integrated circuit substrate according to

claim 76

, wherein said low power plasma is CH₄, CHF₃and an inert gas.

78. The integrated circuit substrate according to

claim 76

, wherein said high power plasma is CF₄, CHF₃and an inert gas.

79. The integrated circuit substrate according to

claim 76

, wherein said low power plasma includes HBr.

80. The integrated circuit substrate according to

claim 76

, wherein said high power plasma includes HBr.

81. The integrated circuit substrate according to

claim 76

, wherein said low power plasma includes Cl₂.

82. The integrated circuit substrate according to

claim 76

, wherein said high power plasma includes Cl₂.

83. The integrated circuit substrate according to

claim 76

, wherein said low power and said high power plasmas are CF₄, CHF₃and Ar.

84. The integrated circuit substrate according to

claim 76

, wherein said low power and said high power plasmas are CF₄, CHF₃and He.

85. A method for plasma etching a silicon substrate, comprising:

providing a silicon substrate having an oxide layer, a patterned photoresist layer, and an antireflective layer;

placing said substrate into a reactive chamber;

generating a first low power plasma of said etching gas in said chamber at about 100-200 Watts;

contacting said substrate with said low power plasma for a time of from about 3 to about 10 seconds to stabilize said patterned photoresist layer on said substrate;

generating a second high power plasma of said etching gas in said chamber at about 800-1100 Watts; and,

contacting said substrate with said high power plasma for a time of from about 30 to about 500 seconds to etch said substrate.

86. The method according to

claim 85

, wherein said low power plasma is about 150 Watts.

87. The method according to

claim 85

88. The method according to

claim 85

, wherein said high power plasma is about 950 Watts.

89. The method according to

claim 85

90. The method according to

claim 85

, wherein said low power plasma of said etching gas includes CF₄, CHF₃and Ar.

91. The method according to

claim 85

, wherein high power plasma of said etching gas includes CF₄, CHF₃and Ar.