US20010000995A1 - Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit - Google Patents
Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit Download PDFInfo
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- US20010000995A1 US20010000995A1 US09/747,790 US74779000A US2001000995A1 US 20010000995 A1 US20010000995 A1 US 20010000995A1 US 74779000 A US74779000 A US 74779000A US 2001000995 A1 US2001000995 A1 US 2001000995A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Definitions
- the present invention relates to synchronous integrated circuits generally and, more particularly, to a circuit, architecture and method for reducing power consumption in a synchronous integrated circuit.
- An example of a conventional power reduction command signal is the Jedec-standard “ZZ” signal.
- a Jedec-standard package for semiconductor devices such as synchronous integrated circuits defines a “ZZ” input pin.
- the “ZZ” pin is configured to place the device in a “sleep” mode for reducing power consumption.
- a synchronous integrated circuit e.g., an SRAM
- the “ZZ” sleep command signal can be activated asynchronously relative to the external clock.
- a synchronous integrated circuit before activating the “ZZ” sleep mode, a synchronous integrated circuit is preferably first deselected by controlling chip enable input signals (e.g., CE and/or CEb). Therefore, to effectively use the reduced power “sleep” mode, (i) a relatively complex setup procedure must be followed, (ii) circuitry must be provided for generating the “ZZ” command signal, and a “ZZ” pin must be provided to receive the “ZZ” command signal.
- chip enable input signals e.g., CE and/or CEb
- the present invention concerns an apparatus comprising a circuit configured to automatically generate a sleep signal upon detecting that one or more chip select signals has been in a first state for a predetermined number of clock cycles.
- the objects, features, and advantages of the present invention include providing a circuit, architecture and method for reducing power consumption in a synchronous integrated circuit that may (i) be implemented without the need for a separate sleep pin (ii) eliminate the need for circuitry to generate a sleep signal, and/or (iii) automatically power down a chip that is deselected or unused after a predetermined length of time.
- FIG. 1 is a block diagram illustrating a preferred embodiment of the present invention
- FIG. 2 is a block diagram illustrating the circuit of FIG. 1 implemented in a synchronous integrated circuit
- FIG. 3 is a timing diagram illustrating signals of the circuit of FIG. 1;
- FIG. 4 is a block diagram illustrating an alternative embodiment.
- the circuit 100 may have an input 102 , an input 104 , an output 106 , and an output 108 .
- a chip enable signal (e.g., CE) may be presented to the input 102 .
- the signal CE may be in an active state (e.g., chip enabled) or an inactive state (e.g., chip not enabled).
- a clock signal (e.g., CLK) may be presented to the input 104 .
- the signal CLK may be an external or an internal clock signal.
- the circuit 100 may be configured to generate an internal select signal (e.g., SELECT) at the output 106 in response to the signal CE. However, one or more internal select signals may be generated accordingly to meet the design criteria of a particular application.
- the circuit 100 may be configured to generate a sleep signal (e.g., AUTO_ZZ) at the output 108 in response to (i) the signal CE and (ii) the signal CLK.
- the signal AUTO_ZZ may have an active state (e.g., power consumption reduced) and an inactive state (e.g., full power operation).
- the signal AUTO_ZZ will generally switch from the inactive state to the active state.
- the signal AUTO_ZZ When the signal CE enters the active state, the signal AUTO_ZZ will generally switch from the active state to the inactive state.
- the signal AUTO_ZZ may be used as a control signal.
- the signal AUTO_ZZ may be used, for example, to control the sleep control logic of a synchronous integrated circuit.
- the circuit 100 generally comprises a circuit 110 and a circuit 112 .
- the circuit 110 may be implemented, in one example, as an input buffer.
- the circuit 112 may be implemented, in one example, as a counter.
- the circuit 110 may be configured to generate (i) the signal SELECT and (ii) a control signal (e.g., SLEEP) at an output 114 in response to the signal CE.
- a control signal e.g., SLEEP
- the signal SLEEP may be presented to an input 116 of the circuit 112 .
- the circuit 112 may be configured to generate the signal AUTO_ZZ in response to (i) the signal SLEEP and (ii) the signal CLK.
- the circuit 100 is shown implemented in the context of a synchronous integrated circuit 120 .
- the synchronous integrated circuit 120 may be, in one example, an SRAM. However, the circuit 100 may be implemented as other types of synchronous circuits to meet the design criteria of a particular implementation.
- the circuit 120 may be implemented as an application specific integrated circuit (ASIC).
- the signal CE may be provided by chip select signals of the synchronous integrated circuit 120 .
- the signal CLK may be, in one example, provided by an internal clock buffer/generator 122 .
- the signal SELECT may be presented to select circuitry 124 of the synchronous integrated circuit 120 .
- the signal AUTO_ZZ may be presented to a sleep control 126 of the synchronous integrated circuit 120 .
- FIG. 3 is a timing diagram illustrating signals of the circuit 100 .
- a portion 128 illustrates, in an example operation, that when the signal CE is active (e.g., a logic “1”, or HIGH), the signal AUTO_ZZ will generally remain inactive (e.g., a logic “0”, or LOW).
- the circuit 112 When the signal CE becomes inactive (e.g., a logic “0”, or LOW) at a transition 130 , the circuit 112 generally counts pulses of the signal CLK beginning with the next edge (e.g., a transition 132 ).
- the signal AUTO_ZZ After the predetermined number of clock pulses N have been counted (e.g., a portion 134 ), the signal AUTO_ZZ generally becomes active (e.g., a logic “1”, or HIGH) at a transition 136 .
- the signal AUTO_ZZ becomes active (e.g., at a transition 138 ).
- FIG. 4 a block diagram of a circuit 100 ′ is shown.
- the circuit 100 ′ is generally implemented similarly to the circuit 100 .
- the circuit 100 ′ may have an input 142 and/or an input 144 .
- the input 144 may be n-bits wide.
- a enable signal (e.g., ZZ_EN) may be presented to the input 142 of the circuit 100 ′.
- the signal ZZ_EN may be used to enable or disable generation of the signal AUTO_ZZ.
- the signal ZZ_EN may be presented, in one example, to the circuit 112 ′.
- a control signal (e.g., ZZ_CNT) may be presented to the input 144 of the circuit 100 ′.
- the signal ZZ_CNT may be n-bits wide.
- the signal ZZ_CNT may be used to program the predetermined number of clock pulses N.
- the signal ZZ_CNT may be presented, in one example, to the circuit 112 ′.
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- Semiconductor Integrated Circuits (AREA)
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Abstract
Description
- 1. This is a continuation of U.S. Ser. No. 09/433,822, filed Nov. 26, 2000.
- 2. The present invention relates to synchronous integrated circuits generally and, more particularly, to a circuit, architecture and method for reducing power consumption in a synchronous integrated circuit.
- 3. Present day electrical products often incorporate semiconductor devices. The use of semiconductor devices has enabled electrical products to accomplish tasks more quickly and efficiently than was previously possible. Improvements in the semiconductor devices have included reducing the amount of power consumed by the devices. One way that semiconductor devices can reduce power consumption is a “powered down” or “sleep” mode. In the sleep mode, input buffers and other current sinking elements are disabled. The electronic device enters the “powered down” or “sleep” mode after receiving a power reduction command signal.
- 4. An example of a conventional power reduction command signal is the Jedec-standard “ZZ” signal. A Jedec-standard package for semiconductor devices such as synchronous integrated circuits defines a “ZZ” input pin. The “ZZ” pin is configured to place the device in a “sleep” mode for reducing power consumption. A synchronous integrated circuit (e.g., an SRAM) is clocked with an externally applied clock signal. The “ZZ” sleep command signal can be activated asynchronously relative to the external clock.
- 5. According to conventional approaches, before activating the “ZZ” sleep mode, a synchronous integrated circuit is preferably first deselected by controlling chip enable input signals (e.g., CE and/or CEb). Therefore, to effectively use the reduced power “sleep” mode, (i) a relatively complex setup procedure must be followed, (ii) circuitry must be provided for generating the “ZZ” command signal, and a “ZZ” pin must be provided to receive the “ZZ” command signal.
- 6. The present invention concerns an apparatus comprising a circuit configured to automatically generate a sleep signal upon detecting that one or more chip select signals has been in a first state for a predetermined number of clock cycles.
- 7. The objects, features, and advantages of the present invention include providing a circuit, architecture and method for reducing power consumption in a synchronous integrated circuit that may (i) be implemented without the need for a separate sleep pin (ii) eliminate the need for circuitry to generate a sleep signal, and/or (iii) automatically power down a chip that is deselected or unused after a predetermined length of time.
- 8. These and other objects, features and advantages of the present invention will be apparent from the following detailed description and the appended claims and drawings in which:
- 9.FIG. 1 is a block diagram illustrating a preferred embodiment of the present invention;
- 10.FIG. 2 is a block diagram illustrating the circuit of FIG. 1 implemented in a synchronous integrated circuit;
- 11.FIG. 3 is a timing diagram illustrating signals of the circuit of FIG. 1; and
- 12.FIG. 4 is a block diagram illustrating an alternative embodiment.
- 13. Referring to FIG. 1, a block diagram of a
circuit 100 is shown in accordance with a preferred embodiment of the present invention. Thecircuit 100 may have aninput 102, aninput 104, anoutput 106, and anoutput 108. In one example, a chip enable signal (e.g., CE) may be presented to theinput 102. However, one or more chip select signals may be presented accordingly to meet the design criteria of a particular application. The signal CE may be in an active state (e.g., chip enabled) or an inactive state (e.g., chip not enabled). A clock signal (e.g., CLK) may be presented to theinput 104. The signal CLK may be an external or an internal clock signal. - 14. The
circuit 100 may be configured to generate an internal select signal (e.g., SELECT) at theoutput 106 in response to the signal CE. However, one or more internal select signals may be generated accordingly to meet the design criteria of a particular application. Thecircuit 100 may be configured to generate a sleep signal (e.g., AUTO_ZZ) at theoutput 108 in response to (i) the signal CE and (ii) the signal CLK. The signal AUTO_ZZ may have an active state (e.g., power consumption reduced) and an inactive state (e.g., full power operation). When the signal CE has been in the inactive state for a predetermined number of cycles of the signal CLK (e.g., N), the signal AUTO_ZZ will generally switch from the inactive state to the active state. When the signal CE enters the active state, the signal AUTO_ZZ will generally switch from the active state to the inactive state. The signal AUTO_ZZ may be used as a control signal. The signal AUTO_ZZ may be used, for example, to control the sleep control logic of a synchronous integrated circuit. - 15. The
circuit 100 generally comprises acircuit 110 and acircuit 112. Thecircuit 110 may be implemented, in one example, as an input buffer. Thecircuit 112 may be implemented, in one example, as a counter. Thecircuit 110 may be configured to generate (i) the signal SELECT and (ii) a control signal (e.g., SLEEP) at anoutput 114 in response to the signal CE. - 16. The signal SLEEP may be presented to an
input 116 of thecircuit 112. Thecircuit 112 may be configured to generate the signal AUTO_ZZ in response to (i) the signal SLEEP and (ii) the signal CLK. - 17. Referring to FIG. 2, the
circuit 100 is shown implemented in the context of a synchronous integratedcircuit 120. The synchronousintegrated circuit 120 may be, in one example, an SRAM. However, thecircuit 100 may be implemented as other types of synchronous circuits to meet the design criteria of a particular implementation. For example, thecircuit 120 may be implemented as an application specific integrated circuit (ASIC). The signal CE may be provided by chip select signals of the synchronousintegrated circuit 120. The signal CLK may be, in one example, provided by an internal clock buffer/generator 122. The signal SELECT may be presented to selectcircuitry 124 of the synchronousintegrated circuit 120. The signal AUTO_ZZ may be presented to asleep control 126 of the synchronousintegrated circuit 120. - 18.FIG. 3 is a timing diagram illustrating signals of the
circuit 100. A portion 128 illustrates, in an example operation, that when the signal CE is active (e.g., a logic “1”, or HIGH), the signal AUTO_ZZ will generally remain inactive (e.g., a logic “0”, or LOW). When the signal CE becomes inactive (e.g., a logic “0”, or LOW) at a transition 130, thecircuit 112 generally counts pulses of the signal CLK beginning with the next edge (e.g., a transition 132). After the predetermined number of clock pulses N have been counted (e.g., a portion 134), the signal AUTO_ZZ generally becomes active (e.g., a logic “1”, or HIGH) at a transition 136. When the signal CE becomes active (e.g., at a transition 138), the signal AUTO_ZZ becomes inactive (e.g., transition 140). - 19. Referring to FIG. 4, a block diagram of a
circuit 100′ is shown. Thecircuit 100′ is generally implemented similarly to thecircuit 100. Thecircuit 100′ may have aninput 142 and/or an input 144. The input 144 may be n-bits wide. A enable signal (e.g., ZZ_EN) may be presented to theinput 142 of thecircuit 100′. The signal ZZ_EN may be used to enable or disable generation of the signal AUTO_ZZ. The signal ZZ_EN may be presented, in one example, to thecircuit 112′. - 20. A control signal (e.g., ZZ_CNT) may be presented to the input 144 of the
circuit 100′. The signal ZZ_CNT may be n-bits wide. The signal ZZ_CNT may be used to program the predetermined number of clock pulses N. The signal ZZ_CNT may be presented, in one example, to thecircuit 112′. - 21. While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention. For example, the present invention may be implemented along with one or more portions of U.S. Pat. Nos. 5,935,255, 5,848,014 and 5,789,952, which are each hereby incorporated by reference in their entirety.
Claims (20)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/747,790 US6363031B2 (en) | 1999-11-03 | 2000-12-22 | Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/433,822 US6166991A (en) | 1999-11-03 | 1999-11-03 | Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit |
| US09/747,790 US6363031B2 (en) | 1999-11-03 | 2000-12-22 | Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/433,822 Continuation US6166991A (en) | 1999-11-03 | 1999-11-03 | Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20010000995A1 true US20010000995A1 (en) | 2001-05-10 |
| US6363031B2 US6363031B2 (en) | 2002-03-26 |
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| US09/433,822 Expired - Lifetime US6166991A (en) | 1999-11-03 | 1999-11-03 | Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit |
| US09/747,790 Expired - Lifetime US6363031B2 (en) | 1999-11-03 | 2000-12-22 | Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| US09/433,822 Expired - Lifetime US6166991A (en) | 1999-11-03 | 1999-11-03 | Circuit, architecture and method for reducing power consumption in a synchronous integrated circuit |
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Cited By (2)
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|---|---|---|---|---|
| US20150023101A1 (en) * | 2013-07-19 | 2015-01-22 | Kabushiki Kaisha Toshiba | Memory system and method of controlling memory system |
| EP3722219B1 (en) | 2019-04-12 | 2024-11-27 | Société Anonyme des Eaux Minérales d'Evian et en Abrégé "S.A.E.M.E" | Thin wall container made with a recycled material |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100587690B1 (en) * | 2004-10-13 | 2006-06-08 | 삼성전자주식회사 | Address buffer circuit and address buffer control method |
| US8335894B1 (en) | 2008-07-25 | 2012-12-18 | Google Inc. | Configurable memory system with interface circuit |
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| US20080028136A1 (en) | 2006-07-31 | 2008-01-31 | Schakel Keith R | Method and apparatus for refresh management of memory modules |
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| US7515453B2 (en) | 2005-06-24 | 2009-04-07 | Metaram, Inc. | Integrated memory core and memory interface circuit |
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| DE112006002300B4 (en) | 2005-09-02 | 2013-12-19 | Google, Inc. | Device for stacking DRAMs |
| US9632929B2 (en) | 2006-02-09 | 2017-04-25 | Google Inc. | Translating an address associated with a command communicated between a system and memory circuits |
| US7724589B2 (en) | 2006-07-31 | 2010-05-25 | Google Inc. | System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits |
| US20080028135A1 (en) * | 2006-07-31 | 2008-01-31 | Metaram, Inc. | Multiple-component memory interface system and method |
| US7630270B2 (en) * | 2006-08-21 | 2009-12-08 | Texas Instruments Incorporated | Dual mode SRAM architecture for voltage scaling and power management |
| US8209479B2 (en) | 2007-07-18 | 2012-06-26 | Google Inc. | Memory circuit system and method |
| US8080874B1 (en) | 2007-09-14 | 2011-12-20 | Google Inc. | Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween |
| EP2441007A1 (en) | 2009-06-09 | 2012-04-18 | Google, Inc. | Programming of dimm termination resistance values |
| KR20160136007A (en) * | 2015-05-19 | 2016-11-29 | 에스케이하이닉스 주식회사 | Device for controlling voltage, semiconductor memory device having the same, and method of controlling semiconductor memory device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247164A (en) * | 1989-01-26 | 1993-09-21 | Hitachi Maxell, Ltd. | IC card and portable terminal |
| US5247655A (en) * | 1989-11-07 | 1993-09-21 | Chips And Technologies, Inc. | Sleep mode refresh apparatus |
| US5254888A (en) * | 1992-03-27 | 1993-10-19 | Picopower Technology Inc. | Switchable clock circuit for microprocessors to thereby save power |
| US5452434A (en) * | 1992-07-14 | 1995-09-19 | Advanced Micro Devices, Inc. | Clock control for power savings in high performance central processing units |
| JPH06318123A (en) * | 1993-05-07 | 1994-11-15 | Nec Ic Microcomput Syst Ltd | Semiconductor integrated circuit |
| US5430393A (en) * | 1993-05-10 | 1995-07-04 | Motorola, Inc. | Integrated circuit with a low-power mode and clock amplifier circuit for same |
| US5337285A (en) * | 1993-05-21 | 1994-08-09 | Rambus, Inc. | Method and apparatus for power control in devices |
| US5563839A (en) * | 1995-03-30 | 1996-10-08 | Simtek Corporation | Semiconductor memory device having a sleep mode |
| US5935255A (en) | 1996-02-23 | 1999-08-10 | Cypress Semiconductor Corp. | CPU core to bus speed ratio detection |
| US5789952A (en) * | 1996-05-01 | 1998-08-04 | Cypress Semiconductor Corporation | Anti-lock CPU clock control method, circuit and apparatus |
| US5848014A (en) * | 1997-06-12 | 1998-12-08 | Cypress Semiconductor Corp. | Semiconductor device such as a static random access memory (SRAM) having a low power mode using a clock disable circuit |
| JP3790021B2 (en) * | 1997-08-13 | 2006-06-28 | 株式会社東芝 | Semiconductor memory device |
| US6122221A (en) * | 1999-02-18 | 2000-09-19 | Cypress Semiconductor Corporation | Scheme for increasing enable access speed in a memory device |
-
1999
- 1999-11-03 US US09/433,822 patent/US6166991A/en not_active Expired - Lifetime
-
2000
- 2000-12-22 US US09/747,790 patent/US6363031B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150023101A1 (en) * | 2013-07-19 | 2015-01-22 | Kabushiki Kaisha Toshiba | Memory system and method of controlling memory system |
| US9042196B2 (en) * | 2013-07-19 | 2015-05-26 | Kabushiki Kaisha Toshiba | Memory system and method of controlling memory system |
| EP3722219B1 (en) | 2019-04-12 | 2024-11-27 | Société Anonyme des Eaux Minérales d'Evian et en Abrégé "S.A.E.M.E" | Thin wall container made with a recycled material |
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| Publication number | Publication date |
|---|---|
| US6363031B2 (en) | 2002-03-26 |
| US6166991A (en) | 2000-12-26 |
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