[go: up one dir, main page]

US10818819B2 - Micro light emitting device and display apparatus - Google Patents

Micro light emitting device and display apparatus Download PDF

Info

Publication number
US10818819B2
US10818819B2 US16/143,434 US201816143434A US10818819B2 US 10818819 B2 US10818819 B2 US 10818819B2 US 201816143434 A US201816143434 A US 201816143434A US 10818819 B2 US10818819 B2 US 10818819B2
Authority
US
United States
Prior art keywords
electrode
light emitting
protruding structure
micro light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US16/143,434
Other languages
English (en)
Other versions
US20200028028A1 (en
Inventor
Pai-Yang TSAI
Fei-Hong Chen
Yi-Chun Shih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pixeled Display Co Ltd
Original Assignee
Pixeled Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pixeled Display Co Ltd filed Critical Pixeled Display Co Ltd
Assigned to PIXELED DISPLAY CO., LTD. reassignment PIXELED DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, Fei-hong, SHIH, YI-CHUN, TSAI, PAI-YANG
Publication of US20200028028A1 publication Critical patent/US20200028028A1/en
Application granted granted Critical
Publication of US10818819B2 publication Critical patent/US10818819B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H01L33/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H01L33/382—
    • H01L33/44—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W90/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10145—Flow barriers
    • H01L33/06—
    • H01L33/32—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
    • H10W72/072—
    • H10W72/227—
    • H10W72/241—
    • H10W72/252—
    • H10W72/287—
    • H10W72/29—
    • H10W72/944—
    • H10W90/724—

Definitions

  • the invention relates to a light emitting device and a display apparatus, and particularly relates to a micro light emitting device and a display apparatus.
  • LEDs solid-state light sources
  • the LEDs have advantages such as long-life span, miniature size, high vibration and shock resistance, high light efficiency and low power consumption, and thus have already been widely used as light sources in household lighting and various equipments.
  • the application scope of the LED has been expanded to road lighting, large outdoor display boards, traffic signal lights, UV curing and other related fields.
  • the LEDs have become one of the main projects for the development of power-saving and environmentally friendly light sources.
  • micro-LED micro light emitting diode
  • the micro-LED is expected to become the mainstream display technology in the next generation due to longer life span and lower production costs, and it thus have attracted active investment and development efforts of many manufacturers.
  • the miniaturization of the LED also results in the shortening of the spacing between two electrode pads. Consequently, during the bonding process of transferring the micro light emitting device to the display apparatus, the problem of short circuit is easy to occur due to the overflowing of the conductive soldering materials respectively connected to the two electrode pads, thereby increasing the chances of producing defective products.
  • the invention provides a micro light emitting device with a good transferring success rate.
  • the invention provides a display apparatus with a good production yield.
  • a micro light emitting device including a component layer, a first electrode and a second electrode.
  • the component layer includes a main body and a protruding structure disposed on the main body.
  • the main body has a surface.
  • the first electrode is electrically connected to the component layer.
  • the second electrode is electrically connected to the component layer.
  • the first electrode, the second electrode and the protruding structure are disposed on the same side of the main body.
  • the protruding structure is located between the first electrode and the second electrode, and a connection between the first electrode and the second electrode traverses the protruding structure.
  • the protruding structure has a first height with respect to the surface. Any one of the first electrode and the second electrode has a second height with respect to the surface.
  • the relation 0.8 ⁇ H1/H2 ⁇ 1.2 is satisfied, wherein H1 is the first height and H2 is the second height.
  • a display apparatus including a back plate, a first bonding pad and a second bonding pad, and the aforementioned micro light emitting device.
  • the first bonding pad and the second bonding pad are disposed on the back plate.
  • the first electrode of the micro light emitting device is electrically connected to the back plate through the first bonding pad.
  • the second electrode of the micro light emitting device is electrically connected to the back plate through the second bonding pad.
  • the first bonding pad and the second bonding pad are separated from each other.
  • a maximum length of the protruding structure of the micro light emitting device is L1.
  • a spacing between the first electrode and the second electrode is S1, and 0.8 ⁇ L1/S1 ⁇ 1 is satisfied.
  • a maximum length of the component layer of the micro light emitting device is L2, and L1/L2 ⁇ 0.8 is satisfied.
  • the first height of the micro light emitting device is less than the second height, and (H2 ⁇ H1)/H1 ⁇ 0.2 is satisfied.
  • the first height of the micro light emitting device is greater than the second height, and (H1 ⁇ H2)/H1 ⁇ 0.2 is satisfied.
  • a thickness of the component layer of the micro light emitting device is H3, and 0.01 ⁇ H1/H3 ⁇ 0.95 is satisfied.
  • the component layer of the micro light emitting device has two side edges that are opposite to each other.
  • a spacing between the two side edges is S2
  • a shortest spacing between the protruding structure and any one of the two side edges is S3, and 0.01 ⁇ S3/S2 ⁇ 0.2 is satisfied.
  • a ratio of an orthographic projection area of the protruding structure on the surface of the main body to a surface area of the surface of the main body is less than or equal to 0.8.
  • the main body of the micro light emitting device includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer.
  • the light emitting layer is disposed on the first type semiconductor layer.
  • the second type semiconductor layer is disposed on the light emitting layer.
  • the protruding structure is connected to the second type semiconductor layer.
  • the component layer of the micro light emitting device includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer.
  • the light emitting layer is disposed on the first type semiconductor layer.
  • the second type semiconductor layer is disposed on the light emitting layer.
  • the protruding structure includes at least a portion of the second type semiconductor layer.
  • the protruding structure of the micro light emitting device includes the second type semiconductor layer, the light emitting layer and a portion of the first type semiconductor layer.
  • the micro light emitting device further includes an insulating layer and a conductive layer.
  • the insulating layer partially covers the first type semiconductor layer and the protruding structure.
  • the conductive layer is disposed on the insulating layer, and is connected to a portion of the second type semiconductor layer exposed by the insulating layer in the protruding structure.
  • the second electrode is connected to the conductive layer, and the first electrode is connected to the first type semiconductor layer.
  • the first electrode and the second electrode of the micro light emitting device have different electrical properties.
  • orthographic projections of the first bonding pad and the second bonding pad on the back plate each partially overlap an orthographic projection of the protruding structure on the back plate.
  • orthographic projections of the first bonding pad, the second bonding pad and the protruding structure on the back plate are staggered from one another.
  • a top surface of the protruding structure is aligned with a surface of the back plate.
  • the back plate has a groove disposed between the corresponding first bonding pad and the corresponding second bonding pad. A portion of the protruding structure of the micro light emitting device is disposed in the groove of the back plate.
  • the micro light emitting device and the display apparatus include the protruding structure disposed between the first electrode and the second electrode, during the bonding process of transferring the micro light emitting device to the display apparatus, the bonding pad connected to the first electrode and the bonding pad connected to the second electrode may be effectively prevented from being conducted with each other due to the overflowing issue. As a result, a better production yield of the display apparatus may be achieved, and a larger design margin of the micro light emitting device may be provided.
  • FIG. 1 is a schematic cross-sectional view of a micro light emitting device according to an embodiment of the invention.
  • FIG. 2 is a schematic top view of a micro light emitting device according to an embodiment of the invention.
  • FIG. 3 is a schematic cross-sectional view of a micro light emitting device according to another embodiment of the invention.
  • FIG. 4 is a schematic cross-sectional view of a micro light emitting device according to yet another embodiment of the invention.
  • FIG. 5A to FIG. 5B are schematic cross-sectional views showing a bonding process of a display apparatus according to an embodiment of the invention.
  • FIG. 6 is a cross-sectional view of a display apparatus according to another embodiment of the invention.
  • FIG. 7 is a cross-sectional view of a display apparatus according to yet another embodiment of the invention.
  • FIG. 1 is a schematic cross-sectional view of a micro light emitting device according to an embodiment of the invention.
  • FIG. 2 is a schematic top view of a micro light emitting device according to an embodiment of the invention.
  • FIG. 1 corresponds to a view taken along the line A-A′ of FIG. 2 . It should be particularly noted that FIG. 2 omits the insulating layer 150 of FIG. 1 .
  • a micro light emitting device 100 includes a component layer 110 , a first electrode 120 and a second electrode 130 .
  • the first electrode 120 is electrically connected to the component layer 110 .
  • the second electrode 130 is electrically connected to the component layer 110 .
  • the component layer 110 of the micro light emitting device 100 includes a protruding structure 140 and a main body 142 .
  • the protruding structure 140 is disposed between the first electrode 120 and the second electrode 130 and is disposed on the main body 142 .
  • the first electrode 120 , the second electrode 130 and the protruding structure 140 are disposed on the same side of the component layer 110 .
  • the first electrode 120 , the second electrode 130 and the protruding structure 140 are disposed on the same side of the main body 142 , and the orthographic projections of the first electrode 120 , the second electrode 130 and the protruding structure 140 on a surface 142 s of the main body 142 do not overlap.
  • a connection between the first electrode 120 and the second electrode 130 traverses the protruding structure 140 , wherein the connection is defined by any point on the first electrode 120 and any point on the second electrode 130 .
  • the orthographic projection of the connection on the surface 142 s traverses the protruding structure 140 . In other words, the orthographic projection of the connection on the surface 142 s traverses the orthographic projection of the protruding structure 140 on the surface 142 s.
  • the protruding structure 140 , the first electrode 120 and the second electrode 130 may be made of the same material, such as selected from gold (Au), tin (Sn), nickel (Ni), titanium (Ti), indium (In), an alloy of the foregoing materials, or a combination of the foregoing.
  • the invention is not limited thereto.
  • the protruding structure 140 , the first electrode 120 and the second electrode 130 may be formed in the same film layer to avoid additional production costs.
  • the protruding structure 140 may also be made of a light transmitting material, such as silicon oxide, silicon nitride, silicon oxynitride, other suitable inorganic materials or a stacked layer of at least two of the foregoing materials, so as to avoid blocking the forward light emitted by the micro light emitting device 100 .
  • a light transmitting material such as silicon oxide, silicon nitride, silicon oxynitride, other suitable inorganic materials or a stacked layer of at least two of the foregoing materials, so as to avoid blocking the forward light emitted by the micro light emitting device 100 .
  • the main body 142 includes a first type semiconductor layer 111 , a light emitting layer 112 , and a second type semiconductor layer 113 .
  • the light emitting layer 112 is disposed on the first type semiconductor layer 111
  • the second type semiconductor layer 113 is disposed on the light emitting layer 112 .
  • the invention is not limited thereto.
  • the protruding structure 140 is connected to the second type semiconductor layer 113 , but the invention is not limited thereto.
  • the first type semiconductor layer 111 and the second type semiconductor layer 113 may include a II-VI group material (e.g., ZnSe) or a III-V nitride material (e.g., GaN, AlN, InN, InGaN, AlGaN, or AlInGaN).
  • the first type semiconductor layer 111 is, for example, an N type doped semiconductor layer, and a material of the N type doped semiconductor layer is, for example, n-GaN.
  • the second type semiconductor layer 113 is, for example, a P type doped semiconductor layer, and a material of the P type doped semiconductor layer is, for example, p-GaN.
  • the invention is not limited thereto.
  • the structure of the light emitting layer 112 is, for example, a multilayer quantum well (MQW) structure, and the multiple quantum well structure includes a plurality of InGaN layers and a plurality of GaN layers that are alternately stacked.
  • the luminescent wavelength range of the light emitting layer 112 may be adjusted through the design of the ratio of indium or gallium in the light emitting layer 112 .
  • the invention is not limited thereto.
  • the first electrode 120 penetrates the second type semiconductor layer 113 and the light emitting layer 112 to be connected to the first type semiconductor layer 111 , and the second electrode 130 is connected to the second type semiconductor layer 113 .
  • the invention is not limited thereto.
  • the first electrode 120 and the second electrode 130 may be electrically connected to the first type semiconductor layer 111 and the second type semiconductor layer 113 through other conductive layers, respectively.
  • the first electrode 120 is, for example, an N type electrode
  • the second electrode 130 is, for example, a P type electrode. More specifically, the first electrode 120 and the second electrode 130 have different electrical properties.
  • a material of the first electrode 120 and the second electrode 130 may be gold (Au), tin (Sn), nickel (Ni), titanium (Ti) and indium (In), an alloy of the foregoing materials, or a combination of the foregoing.
  • Au gold
  • tin Sn
  • Ni nickel
  • Ti titanium
  • In indium
  • the invention is not limited thereto.
  • the micro light emitting device 100 further includes an insulating layer 150 that covers the protruding structure 140 , the light emitting layer 112 , a portion of the first type semiconductor layer 111 and a portion of the second type semiconductor layer 113 .
  • the first electrode 120 penetrates the insulating layer 150 , the second type semiconductor layer 113 and the light emitting layer 112 to be connected to the first type semiconductor layer 111 .
  • the second electrode 130 penetrates the insulating layer 150 to be connected to the second type semiconductor layer 113 . It should be particularly noted that the portion of the insulating layer 150 that covers the protruding structure 140 may also be viewed as a part of the protruding structure 140 .
  • the insulating layer 150 may also be omitted.
  • a material of the insulating layer 150 is, for example, silicon oxide, silicon nitride, silicon oxynitride, other suitable inorganic materials, or a stacked layer of at least two of the foregoing materials.
  • the invention is not limited thereto.
  • the protruding structure 140 is located on the surface 142 s of the main body 142 in a first direction D1, and the vertical height of the protruding structure 140 with respect to the surface 142 s is a first height H1.
  • the vertical height of any one of the first electrode 120 and the second electrode 130 with respect to the surface 142 s in the first direction D1 is a second height H2.
  • the first height H1 of the protruding structure 140 and the second height H2 of the first electrode 120 or the second electrode 130 may satisfy the following relation: 0.8 ⁇ H1/H2 ⁇ 1.2.
  • the surface 142 s of the main body 142 refers to the topmost surface of the main body 142 .
  • the first height H1 of the protruding structure 140 is less than the second height H2 of any one of the first electrode 120 and the second electrode 130 , and the following relation is satisfied: (H2 ⁇ H1)/H1 ⁇ 0.2.
  • the first height H1 of the protruding structure 140 is greater than the second height H2 of any one of the first electrode 120 and the second electrode 130 , and the following relation is satisfied: (H1 ⁇ H2)/H1 ⁇ 0.2. If the value is greater than 0.2, the yield of the bonding process may be affected.
  • the component layer 110 has a thickness H3 in the first direction D1.
  • the first height H1 of the protruding structure 140 and the thickness H3 of the component layer 110 may satisfy the following relation: 0.01 ⁇ H1/H3 ⁇ 0.95. If the value is less than 0.01, the overflow issue in the bonding process may not be effectively avoided, and if the value is greater than 0.95, the yield of the bonding process may be affected.
  • the preferable implementation condition is 0.3 ⁇ H1/H3 ⁇ 0.7, under which the overflow in the bonding process may be effectively blocked and the yield of the bonding process may be increased, but the invention is not limited thereto.
  • the connection between the first electrode 120 and the second electrode 130 is substantially parallel to a second direction D2 (i.e., the extending direction of the line A-A′), and the second direction D2 is substantially perpendicular to the first direction D1.
  • the protruding structure 140 has a maximum length L1 in the second direction D2, and a spacing S1 exists between the first electrode 120 and the second electrode 130 in the second direction D2.
  • the length L1 of the protruding structure 140 and the spacing S1 between the first electrode 120 and the second electrode 130 may satisfy the following relation: 0.8 ⁇ L1/S1 ⁇ 1. If the value is less than 0.8, the overflow issue may not be effectively avoided, but the invention is not limited thereto.
  • the component layer 110 has a maximum length L2 in the second direction D2.
  • the length L1 of the protruding structure 140 and the length L2 of the component layer 110 may satisfy the following relation: L1/L2 ⁇ 0.8, so that the protruding structure 140 is prevented from getting too close to the edge of the main body 142 to cause a decrease in yield.
  • the invention is not limited thereto.
  • the protruding structure 140 has a maximum width W1 in a third direction D3 perpendicular to the second direction D2, and the component layer 110 has a maximum width W2 in the third direction D3.
  • the width W1 of the protruding structure 140 and the width W2 of the component layer 110 may satisfy the following relation: W1/W2 ⁇ 0.8, so that the protruding structure 140 is prevented from getting too close to the edge of the main body 142 to cause a decrease in yield.
  • the invention is not limited thereto.
  • the first electrode 120 and the second electrode 130 respectively have a maximum width W3 and a maximum width W4 in the third direction D3 perpendicular to the second direction D2, wherein the width W1 is greater than both the width W3 and the width W4. As a result, a better overflow tolerance may be achieved.
  • the component layer 110 has two side edges 110 a and 110 b that are opposite to each other, and a spacing between the two side edges 110 a and 110 b is S2.
  • the shortest spacing between the protruding structure 140 and any one of the two, side edges 110 a and 110 b is S3.
  • the spacing S2 between the two side edges 110 a and 110 b of the component layer 110 and the shortest spacing S3 between the protruding structure 140 and any one of the two side edges 110 a and 110 b may satisfy the following relation: 0.01 ⁇ S3/S2 ⁇ 0.2, so that the protruding structure 140 is prevented from getting too close to the two side edges 110 a and 110 b of the component layer 110 to cause problems such as sidewall leakage.
  • the invention is not limited thereto.
  • the shortest spacing S3 between the protruding structure 140 and any one of the two side edges 110 a and 110 b may be less than or equal to 10 ⁇ m.
  • the ratio of the orthographic projection area of the protruding structure 140 on the surface 142 s of the main body 142 to the surface area of the surface 142 s of the main body 142 may be less than or equal to 0.8. If the value is greater than 0.8, the proportion of the protruding structure 140 is too large and the overflow tolerance is thus reduced.
  • the invention is not limited thereto. Although some embodiments of the invention specifically describe a micro light emitting device having a P—N diode, it should be understood that the embodiments of the invention are not limited thereto.
  • micro semiconductor devices are also applicable in some of the embodiments, including micro semiconductor devices that may control the execution of predetermined electronic functions (e.g., diodes, transistors, or integrated circuits) or micro semiconductor devices having photon functions (e.g., light-emitting diodes, laser diodes, or photodiodes).
  • a microchip including circuits may also be applicable in other embodiments of the invention, e.g., a microchip made of a Si or SOI wafer material for logic or memory applications, or a microchip made of a GaAs wafer material for RF communication applications.
  • FIG. 3 is a schematic cross-sectional view of a micro light emitting device according to another embodiment of the invention.
  • the main difference between a micro light emitting device 100 A in this embodiment and the micro light emitting device 100 as shown in FIG. 1 is as follows: a protruding structure 140 A of the micro light emitting device 100 A includes at least a portion of a second type semiconductor layer 113 A.
  • a first electrode 120 A penetrates the second type semiconductor layer 113 A and a light emitting layer 112 A of a main body 142 A so as to be electrically connected to a portion of a first type semiconductor layer 111 A exposed by an insulating layer 150 .
  • a second electrode 130 A is connected to a portion of the second type semiconductor layer 113 A exposed by the insulating layer 150 .
  • a first height H1 of the protruding structure 140 A and a thickness H3 of a component layer 110 A satisfy the following relation: 0.01 ⁇ H1/H3 ⁇ 0.3, so that the overflow in the bonding process may be effectively blocked and the yield of the bonding process may be increased.
  • FIG. 4 is a schematic cross-sectional view of a micro light emitting device according to yet another embodiment of the invention.
  • the main difference between a micro light emitting device 100 B in this embodiment and the micro light emitting device 100 as shown in FIG. 1 is as follows: a protruding structure 140 B of the micro light emitting device 100 B includes a second type semiconductor layer 113 B and a light emitting layer 112 B.
  • the protruding structure 140 B further includes a portion of a first type semiconductor layer 111 B, and a main body 142 B includes a portion of the first type semiconductor layer 111 B.
  • the invention is not limited thereto.
  • the light emitting layer 112 B is located in the protruding structure 140 B at the center, and a first electrode 120 B and a second electrode 130 B are disposed on two sides of the protruding structure 140 B. Therefore, the current density of the micro light emitting device 100 B is concentrated to enhance the light emitting efficiency of the micro light emitting device 100 B and to avoid problems such as sidewall leakage.
  • the protruding structure 140 B and the main body 142 B in this embodiment may be chosen to be formed from the same process; for example, both may be formed through metal-organic chemical vapor deposition. More preferably, after the first type semiconductor layer 111 B, the light emitting layer 112 B and the second type semiconductor layer 113 B are completed, the protruding structure 140 B and the main body 142 B are then respectively formed by processes such as photolithographic and etching processes to improve the manufacturing efficiency of the micro light emitting device 100 B.
  • a first height H1 of the protruding structure 140 B and a thickness H3 of a component layer 110 B satisfy the following relation: 0.7 ⁇ H1/H3 ⁇ 0.95. If the value is less than 0.7, the overflow issue in the bonding process may not be effectively avoided, and if the value is greater than 0.95, the yield of the bonding process may be affected.
  • the first electrode 120 B and the second electrode 130 B are disposed on the first type semiconductor layer 111 B.
  • the micro light emitting device 100 B further includes an insulating layer 160 and a conductive layer 170 .
  • the insulating layer 160 partially covers the first type semiconductor layer 111 B and the protruding structure 140 B.
  • the conductive layer 170 is disposed on the insulating layer 160 , and is connected to a portion of the second type semiconductor layer 113 B exposed by the insulating layer 160 in the protruding structure 140 B.
  • the second electrode 130 B is electrically connected to the second type semiconductor layer 113 B through the conductive layer 170
  • the first electrode 120 B is connected to a portion of the first type semiconductor layer 111 B exposed by an insulating layer 150 B.
  • the insulating layer 160 and the insulating layer 150 B may be made of the same material, such as silicon oxide, silicon nitride, silicon oxynitride, other suitable inorganic materials, or a stacked layer of at least two of the foregoing materials.
  • the invention is not limited thereto. It should be particularly noted that the portions of the insulating layer 150 B, the insulating layer 160 and the conductive layer 170 that cover the protruding structure 140 B may also be viewed as a part of the protruding structure 140 B.
  • the conductive layer 170 is generally made of a metal material. However, the invention is not limited thereto. In some embodiments, the conductive layer 170 may also be made of another conductive material, such as an alloy, a nitride of the metal material, an oxide of the metal material, a nitrogen oxide of the metal material, other suitable materials, or a stacked layer of the metal material and other conductive materials. In some other embodiments, the conductive layer 170 may also be made of a conductive material having high reflectivity, such as silver (Ag), aluminum (Al) or gold (Au), to improve the effective light emitting intensity of the micro light emitting device 100 B.
  • a conductive material having high reflectivity such as silver (Ag), aluminum (Al) or gold (Au
  • FIG. 5A to FIG. 5B are schematic cross-sectional views showing a bonding process of a display apparatus 10 A according to an embodiment of the invention.
  • FIG. 5A is a schematic cross-sectional view showing a plurality of micro light emitting devices 100 transferring onto a back plate 11 .
  • the display apparatus 10 A includes the plurality of micro light emitting devices 100 , the back plate 11 , a plurality of first bonding pads 12 and a plurality of second bonding pads 13 .
  • the plurality of first bonding pads 12 are respectively disposed on the back plate 11 corresponding to first electrodes 120 of the plurality of micro light emitting devices 100 .
  • the plurality of second bonding pads 13 are respectively disposed on the back plate 11 corresponding to second electrodes 130 of the plurality of micro light emitting devices 100 .
  • a material of the first bonding pad 12 and the second bonding pad 13 is, for example, gold, copper, tin, indium, an alloy of the foregoing materials, a combination of the foregoing materials, or a solder paste.
  • the bonding pad 12 and the second bonding pad 13 may also be made of an anisotropic conductive film (ACF) or other suitable bonding materials.
  • ACF anisotropic conductive film
  • FIG. 5B is a schematic cross-sectional view showing the display apparatus 10 A in this embodiment after the plurality of first bonding pads 12 and the plurality of second bonding pads 13 are heated and cured.
  • the plurality of first bonding pads 12 and the plurality of second bonding pads 13 in FIG. 5A are heated to a melted state
  • the plurality of first bonding pads 12 and the plurality of second bonding pads 13 in the melted state each overflow along a surface 11 s of the back plate 11 .
  • the first bonding pad 12 and the second bonding pad 13 flowing toward a protruding structure 140 overflow between the protruding structure 140 and the back plate 11 .
  • the protruding structure 140 in this embodiment may greatly reduce the probability of causing short circuit due to the overflowing of the first bonding pad 12 and the second bonding pad 13 in the melted state.
  • the first electrode 120 of the micro light emitting device 100 is electrically connected to the back plate 11 through the first bonding pad 12
  • the second electrode 130 of the micro light emitting device 100 is electrically connected to the back plate 11 through the second bonding pad 13 , so that the display apparatus 10 A of this embodiment is formed.
  • the orthographic projections of the first bonding pad 12 and the second bonding pad 13 on the back plate 11 each partially overlap the orthographic projection of the protruding structure 140 on the back plate 11 .
  • the invention is not limited thereto.
  • the orthographic projections of the first bonding pad 12 , the second bonding pad 13 and the protruding structure 140 on the back plate 11 are staggered from one another.
  • the display apparatus 10 A is, for example, a micro-LED display.
  • the micro-LED display may include other components depending on its application.
  • the other components include (but are not limited to) memory, a touch screen controller and a battery.
  • the micro-LED display may be a television, a tablet computer, a telephone, a laptop computer, a computer monitor, a stand-alone terminal service desk, a digital camera, a handheld game console, a media display, an e-book display, a vehicle display, or a large electronic bulletin board display.
  • the micro light emitting device is reduced from the millimeter-scale to the micrometer-scale.
  • the micro-LED display may achieve high resolution and reduce power consumption of the display, and has advantages such as energy saving, simple mechanism, and thinness in shape.
  • the back plate 11 is, for example, a pixel array substrate.
  • the pixel array substrate may be a complementary metal oxide semiconductor (CMOS) substrate, a liquid crystal on silicon (LCOS) substrate, a thin film transistor (TFT) substrate, or another substrate having a driving circuit.
  • CMOS complementary metal oxide semiconductor
  • LCOS liquid crystal on silicon
  • TFT thin film transistor
  • the plurality of micro light emitting devices 100 may include micro-LEDs having different luminescent wavelength ranges (e.g., red light, blue light, and green light). However, the invention is not limited thereto.
  • the orthographic projection of the protruding structure 140 of the micro light emitting device 100 on the surface 11 s of the back plate 11 has a rectangular contour.
  • the invention is not limited thereto.
  • the orthographic projection of the protruding structure 140 of the micro light emitting device 100 on the surface 11 s of the back plate 11 may also have a square contour, a circular contour, a diamond-shaped contour or have a contour of another suitable shape.
  • the orthographic projections of the protruding structures 140 of the plurality of micro light emitting devices 100 applied to a display apparatus (such as a micro-LED display) on the surface 11 s of the back plate 11 may have different contour shapes according to different luminescent wavelength ranges. In this way, during the process of transferring the plurality of micro light emitting devices to the back plate (such as a pixel array substrate), the protruding structures 140 having different appearances may improve the alignment accuracy of different pixels.
  • FIG. 6 is a cross-sectional view of a display apparatus according to another embodiment of the invention.
  • a difference between a display apparatus 10 B of this embodiment and the display apparatus 10 A of FIG. 5B is as follows: a top surface 140 Ct of a protruding structure 140 C of a micro light emitting device 100 C is aligned with a surface 11 s of a back plate 11 .
  • a first bonding pad 12 and a second bonding pad 13 in a melted state may be completely blocked by the protruding structure 140 C of the micro light emitting device 100 C, so that the probability of causing short circuit due to the overflowing of the first bonding pad 12 and the second bonding pad 13 in the melted state may be greatly reduced.
  • the protruding structure 140 C here includes an insulating layer 150 .
  • the insulating layer 150 may also be omitted. As long as the first bonding pad 12 and the second bonding pad 13 in the melted state are blocked, the description is still within the scope of the invention.
  • FIG. 7 is a cross-sectional view of a display apparatus 10 C according to yet another embodiment of the invention.
  • a difference between the display apparatus 10 C of this embodiment and the display apparatus 10 B of FIG. 6 is as follows: a back plate 11 C has a plurality of grooves 11 Ca, and each groove 11 Ca is disposed between a set of a first bonding pad 12 and a second bonding pad 13 corresponding to one micro light emitting device 100 D.
  • a portion of a protruding structure 140 D of the micro light emitting device 100 D is disposed in the groove 11 Ca of the back plate 11 C. Therefore, compared with the display apparatus 10 B of FIG. 6 , the display apparatus 10 C of this embodiment may further reduce the probability of causing short circuit due to the overflowing of the first bonding pad 12 and the second bonding pad 13 in the melted state.
  • the orthographic projection of the groove 11 Ca of the back plate 11 C on a surface 11 Cs of the back plate 11 C has a rectangular contour, for example.
  • the invention is not limited thereto.
  • the orthographic projection of the groove 11 Ca of the back plate 11 C on the surface 11 Cs of the back plate 11 C may also have a square contour, a circular contour, a diamond-shaped contour or have a contour of another suitable shape, so as to match the orthographic projection of the micro light emitting device 100 D on the surface 11 Cs of the back plate 11 C.
  • a plurality of micro light emitting devices 100 D (such as micro-LEDs emitting lights of different colors) applied to a display apparatus (such as a micro-LED display) may perform an alignment process by utilizing the projection contour of the groove 11 Ca of the back plate 11 C on the surface 11 Cs, so as to improve the alignment accuracy of different pixels.
  • the micro light emitting device and the display apparatus include the protruding structure disposed between the first electrode and the second electrode, during the bonding process of transferring the micro light emitting device to the display apparatus, the bonding pad connected to the first electrode and the bonding pad connected to the second electrode may be effectively prevented from being conducted with each other due to the overflowing issue. As a result, a better production yield of the display apparatus may be achieved, and a larger design margin of the micro light emitting device may be provided.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
US16/143,434 2018-07-20 2018-09-26 Micro light emitting device and display apparatus Active US10818819B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW107125053A 2018-07-20
TW107125053A TWI661575B (zh) 2018-07-20 2018-07-20 微型發光元件及顯示裝置
TW107125053 2018-07-20

Publications (2)

Publication Number Publication Date
US20200028028A1 US20200028028A1 (en) 2020-01-23
US10818819B2 true US10818819B2 (en) 2020-10-27

Family

ID=67764080

Family Applications (1)

Application Number Title Priority Date Filing Date
US16/143,434 Active US10818819B2 (en) 2018-07-20 2018-09-26 Micro light emitting device and display apparatus

Country Status (2)

Country Link
US (1) US10818819B2 (zh)
TW (1) TWI661575B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220320371A1 (en) * 2019-09-26 2022-10-06 Lg Electronics Inc. Display device using micro-leds and method for manufacturing same
US11916096B2 (en) 2017-02-09 2024-02-27 Vuereal Inc. Circuit and system integration onto a micro-device substrate
US12322732B2 (en) 2017-02-09 2025-06-03 Vuereal Inc. Circuit and system integration onto a microdevice substrate

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI685945B (zh) * 2018-12-04 2020-02-21 錼創顯示科技股份有限公司 微型半導體元件結構
CN112582507B (zh) * 2019-09-30 2022-04-26 成都辰显光电有限公司 Led芯片及显示面板
TWI725757B (zh) * 2020-03-05 2021-04-21 財團法人工業技術研究院 子畫素結構、畫素結構以及應用於其的發光二極體晶粒
CN111463233B (zh) * 2020-04-16 2022-09-13 錼创显示科技股份有限公司 微型发光元件显示装置
TWI726685B (zh) 2020-04-16 2021-05-01 錼創顯示科技股份有限公司 微型發光元件顯示裝置
KR20220041484A (ko) * 2020-09-25 2022-04-01 삼성전자주식회사 마이크로 발광 소자, 이를 포함한 디스플레이 장치 및 그 제조 방법
CN112259671B (zh) * 2020-10-23 2021-11-09 京东方科技集团股份有限公司 一种驱动背板、显示面板及显示装置
CN115148875A (zh) * 2021-03-31 2022-10-04 联嘉光电股份有限公司 一种发光二极管晶粒结构
CN114005916A (zh) * 2021-11-01 2022-02-01 厦门天马微电子有限公司 微型发光二极管和显示面板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100103A (en) * 1998-05-21 2000-08-08 Electronics And Telecommunications Research Institute Highly integrated multicolor light emitting device and a method for manufacturing the same
US20040206977A1 (en) * 2003-04-21 2004-10-21 Samsung Electronics Co., Ltd. Semiconductor light emitting diode and method for manufacturing the same
US20060261350A1 (en) * 2003-04-23 2006-11-23 Hiroshi Kawazoe Light-emitting diode
TW201351719A (zh) 2012-05-25 2013-12-16 東芝股份有限公司 半導體發光裝置及光源單元
US20160020353A1 (en) 2014-05-24 2016-01-21 Hiphoton Co., Ltd Semiconductor structure
TW201605082A (zh) 2014-07-18 2016-02-01 首爾偉傲世有限公司 發光二極體、發光裝置及其製造方法
US20180019233A1 (en) * 2016-07-18 2018-01-18 Lumens Co., Ltd. Micro-led array display devices

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100103A (en) * 1998-05-21 2000-08-08 Electronics And Telecommunications Research Institute Highly integrated multicolor light emitting device and a method for manufacturing the same
US20040206977A1 (en) * 2003-04-21 2004-10-21 Samsung Electronics Co., Ltd. Semiconductor light emitting diode and method for manufacturing the same
US20060261350A1 (en) * 2003-04-23 2006-11-23 Hiroshi Kawazoe Light-emitting diode
TW201351719A (zh) 2012-05-25 2013-12-16 東芝股份有限公司 半導體發光裝置及光源單元
US20160020353A1 (en) 2014-05-24 2016-01-21 Hiphoton Co., Ltd Semiconductor structure
TW201605082A (zh) 2014-07-18 2016-02-01 首爾偉傲世有限公司 發光二極體、發光裝置及其製造方法
US20180019233A1 (en) * 2016-07-18 2018-01-18 Lumens Co., Ltd. Micro-led array display devices
TW201804608A (zh) 2016-07-18 2018-02-01 流明斯有限公司 微發光二極體陣列顯示裝置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Office Action of Taiwan Counterpart Application", dated Jan. 15, 2019, p. 1-p. 6.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11916096B2 (en) 2017-02-09 2024-02-27 Vuereal Inc. Circuit and system integration onto a micro-device substrate
US12322732B2 (en) 2017-02-09 2025-06-03 Vuereal Inc. Circuit and system integration onto a microdevice substrate
US12419145B2 (en) 2017-02-09 2025-09-16 Vuereal Inc. Circuit and system integration onto a microdevice substrate
US12426413B2 (en) * 2017-02-09 2025-09-23 Vuereal Inc. Circuit and system integration onto a microdevice substrate
US20220320371A1 (en) * 2019-09-26 2022-10-06 Lg Electronics Inc. Display device using micro-leds and method for manufacturing same

Also Published As

Publication number Publication date
TW202008609A (zh) 2020-02-16
TWI661575B (zh) 2019-06-01
US20200028028A1 (en) 2020-01-23

Similar Documents

Publication Publication Date Title
US10818819B2 (en) Micro light emitting device and display apparatus
CN100487931C (zh) 半导体发光元件及其制造方法和安装方法、发光器件
US11056614B2 (en) Micro light-emitting diode chip
US8399904B2 (en) Light emitting device and lighting system having the same
US9882104B2 (en) Light emitting device package having LED disposed in lead frame cavities
JP6359632B2 (ja) 発光素子パッケージ
JP6755656B2 (ja) 発光素子、発光素子アレイ及びそれを含む照明装置
US9559278B2 (en) Light emitting device package
US8519426B2 (en) Light emitting device and lighting system having the same
US20190006559A1 (en) Micro light emitting diode and display panel
US10522712B2 (en) Micro light-emitting diode chip
CN105322084A (zh) 发光器件模块
CN108288664A (zh) 微型发光二极管晶片
US10062811B2 (en) Light-emitting element and light-emitting element array comprising the same
CN102315349B (zh) 发光器件及其制造方法
CN110739380B (zh) 微型发光元件及显示装置
TWI865962B (zh) 顯示裝置
KR102471944B1 (ko) 발광소자 패키지
US20250098384A1 (en) Package structure
KR20110055753A (ko) 플립칩형 엘이디 패키지

Legal Events

Date Code Title Description
FEPP Fee payment procedure

Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

AS Assignment

Owner name: PIXELED DISPLAY CO., LTD., TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TSAI, PAI-YANG;CHEN, FEI-HONG;SHIH, YI-CHUN;REEL/FRAME:047061/0357

Effective date: 20180920

FEPP Fee payment procedure

Free format text: ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: SMAL); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

Year of fee payment: 4