TWM638224U - Semiconductor package - Google Patents

Abstract

A semiconductor package includes a substrate, a first electronic component, a second electronic component, a heat dissipation component, a liquid metal thermal layer, and a heat conductive sealer. The first electronic component is disposed on the substrate. The first electronic component and the second electronic component are disposed on the substrate in a side-by-side manner. The heat dissipation component is disposed over the first electronic component and includes an extension portion extended over the second electronic component. The liquid metal thermal layer is disposed between and thermally coupled to the heat dissipation component and the first electronic component. The heat conductive sealer surrounds the first electronic component and is filled in a gap between the first electronic component and the second electronic component, and a gap between the second electronic component and the extension portion.

Description

semiconductor packaging

The present disclosure relates to a semiconductor package with a thermally conductive seal.

With the demand for high-performance heat dissipation, thermal paste has gradually been unable to meet today's heat dissipation requirements. The heat transfer rate per unit time is determined by the thermal resistance of the heating element and the cooling device. Therefore, it is necessary to select materials with high thermal conductivity and good contact surface bonding to improve heat dissipation performance. Although liquid metal has the characteristics of non-toxicity, low volatility and high thermal conductivity, it has become a more popular choice. However, due to the high fluidity of liquid metal, it is easy to have leakage and overflow problems when filling between the heating element and the heat sink. If additional insulating materials are provided to prevent overflow, it will not only increase the complexity of the assembly steps , will also increase the thermal resistance between components and reduce the heat dissipation performance.

The disclosure provides a semiconductor package, which can simplify assembly steps and improve heat dissipation performance.

A semiconductor package disclosed in the present disclosure includes a substrate, a first electronic component, a second electronic component, a heat dissipation component, a liquid metal heat conduction layer, and a heat conduction seal. first electronic unit components are placed on the substrate. The second electronic component is arranged side by side with the first electronic component on the substrate. The heat dissipation element is disposed on the first electronic component and includes an extension extending above the second electronic component. The liquid metal thermal conduction layer is arranged between the heat dissipation element and the first electronic element and forms a thermal coupling with the heat dissipation element and the first electronic element. The thermally conductive sealing member surrounds the first electronic component and fills the gap between the first electronic component and the second electronic component and the gap between the second electronic component and the extension.

In an embodiment of the present disclosure, the first electronic component includes an active component, and the second electronic component includes a passive component.

In an embodiment of the present disclosure, the second electronic component is disposed around the first electronic component.

In an embodiment of the present disclosure, the thermally conductive seal includes an integrally formed ring structure.

In an embodiment of the present disclosure, the thermally conductive sealing member includes a plurality of discontinuous but connected strip structures to surround the first electronic component together.

In an embodiment of the present disclosure, the thermal conductivity of the thermally conductive seal is greater than 1 W/mK.

In one embodiment of the present disclosure, the compressibility of the thermally conductive seal is less than 70%.

In an embodiment of the present disclosure, the semiconductor package further includes a supporting ring surrounding the surrounding area of the substrate.

In an embodiment of the present disclosure, the semiconductor package further includes an adhesive layer disposed between the thermally conductive sealing member and the second electronic component and between the thermally conductive sealing member and the substrate.

In an embodiment of the present disclosure, the semiconductor package further includes an auxiliary sealing ring, It is arranged around the heat conducting seal.

Based on the above, the first electronic component and the second electronic component of the semiconductor package of the present disclosure are arranged side by side on the substrate, the thermally conductive sealing member surrounds the first electronic component and fills the gap between the first electronic component and the second electronic component and The gap between the second electronic component and the heat sink. In this way, the semiconductor package 100 can take advantage of the high compressibility of the thermally conductive sealant, so that the thermally conductive sealant can simultaneously fill the gap between the heat sink element and the first electronic component and the gap between the second electronic component and the heat sink element without using Seals of different sizes fill the two gaps of different thicknesses. In addition, the high thermal conductivity of the thermally conductive sealing member can also reduce the thermal resistance of the semiconductor package, thereby improving the heat dissipation efficiency.

100: Semiconductor packaging

110: Substrate

120: The first electronic component

130: the second electronic component

140: cooling element

142: Extension

150: liquid metal heat conduction layer

160: thermal seal

170: support ring

180: Adhesive layer

182: Extended area

190: Auxiliary sealing ring

FIG. 1 is a schematic partial cross-sectional view of a semiconductor package according to an embodiment of the disclosure.

FIG. 2 is a schematic perspective view of some components of a semiconductor package according to an embodiment of the disclosure.

FIG. 3 is a schematic partial cross-sectional view of a semiconductor package according to an embodiment of the disclosure.

FIG. 4 is a schematic perspective view of some components of a semiconductor package according to an embodiment of the disclosure.

The aforementioned and other technical contents, features and effects of the present disclosure will be clearly presented in the following detailed descriptions of the embodiments with reference to the drawings. The directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the attached drawings. Accordingly, the directional terms used are for illustration, not for limitation of the present disclosure. Also, in the following embodiments, the same or similar components will be given the same or similar symbols.

FIG. 1 is a schematic partial cross-sectional view of a semiconductor package according to an embodiment of the disclosure. FIG. 2 is a schematic perspective view of some components of a semiconductor package according to an embodiment of the disclosure. It should be noted here that the heat dissipation element 140 is omitted in FIG. 2 and FIG. 4 , so as to present the structural configuration under the heat dissipation element 140 more clearly. Referring to FIG. 1 and FIG. 2 , the semiconductor package 100 includes a substrate 110 , a first electronic component 120 , a second electronic component 130 , a heat dissipation component 140 , a liquid metal heat conduction layer 150 and a heat conduction seal 160 . The first electronic component 120 and the second electronic component 130 are disposed on the substrate 110 . In one embodiment, the first electronic component 120 and the second electronic component 130 are arranged side by side on the substrate 110 . In this embodiment, the first electronic component 120 may include active components such as a central processing unit (CPU), a graphics processing unit (GPU), and the second electronic component 130 may include passive components such as capacitors, resistors, and inductors. In an embodiment, the number of the second electronic components 130 may be multiple, and they are respectively disposed around the first electronic components 120 . In this embodiment, the second electronic component 130 may include a multi-layer ceramic capacitor (Multi-layer Ceramic Capacitor, MLCC), but the disclosure is not limited thereto.

In some embodiments, the heat dissipation element 140 is disposed on the first electronic component 120 , and the heat dissipation element 140 may include an extension portion 142 extending above the second electronic component 130 . In one embodiment, the heat dissipation element 140 may include heat dissipation elements such as heat pipes and heat dissipation fins, which are used for attaching to the heat generating surface of the first electronic component 120 to dissipate heat in a heat exchange mode. In order to enhance the heat dissipation efficiency of the heat dissipation element 140 , generally, a heat conduction material is coated between the two bonding surfaces of the heat dissipation element 140 and the first electronic component 120 to enhance heat conduction efficiency. Accordingly, in this embodiment, the liquid metal heat conduction layer 150 is disposed between the heat dissipation element 140 and the first electronic component 120 , and forms a thermal coupling with the heat dissipation element 140 and the first electronic component 120 . In this embodiment, the liquid metal heat conduction layer 150 is a liquid metal heat conduction paste (thermal interface material), which may include a chemical combination such as gallium-indium-tin alloy. Generally speaking, liquid metal materials have a boiling point as high as 2000°C and have very stable physical and chemical properties, making them less volatile in the air. Liquid metal is a viscous thermally conductive compound with good thermal conductivity in the vertical (C-plane) direction. Therefore, the liquid metal heat conduction layer 150 can fill the air gap between the two bonding surfaces to reduce thermal resistance and improve heat dissipation performance.

The liquid metal heat conduction layer 150 is mainly used to reduce the air gap between the heat dissipation element 140 and the first electronic element 120 . However, since the liquid metal heat conduction layer 150 is in a liquid state, it is easy to overflow to the substrate 110 and/or areas other than the first electronic component 120 to cause problems such as reliability and electrical short circuit of the semiconductor package. Therefore, in some embodiments, the thermally conductive seal 160 is used to surround the first electronic component 120 and fill the gap between the first electronic component 120 and the second electronic component 130 and the extension of the second electronic component 130 and the heat dissipation component 140 Between Section 142 gaps to prevent the liquid metal heat conduction layer 150 from overflowing beyond the area enclosed by the heat conduction seal 160 .

In one embodiment, the heat conduction seal 160 can be an integrally formed ring structure as shown in FIG. 2 . In other embodiments, the heat conduction seal 160 can also be a discontinuous but connected strip structure as shown in FIG. 4 , so as to surround the first electronic component 120 together. In this embodiment, the material of the thermally conductive sealing member 160 may include silicone grease, silicone glue and other sealing materials with high thermal conductivity and high compression rate. In one embodiment, the thermal conductivity of the thermally conductive sealing member 160 may be greater than 1 W/mK. For example, the thermal conductivity of the thermally conductive sealing member 160 in this embodiment is approximately between 3 W/mK and 5 W/mK. In one embodiment, the compressibility of the thermally conductive sealing member 160 may be less than 70%. For example, the compressibility of the thermally conductive sealing member 160 in this embodiment may be less than 50%. Compressibility refers to the measure of the relative volume change caused by an object’s pressure change. The higher the compressibility, the greater the relative volume change caused by the pressure change. In this way, the semiconductor package 100 of the present disclosure uses the high thermal conductivity sealing member 160 with a high compression rate so that the thermal conductive sealing member 160 can simultaneously fill the gap between the heat dissipation element 140 and the first electronic component 120 and the second electronic component 130 and the heat dissipation element. The gap between the extension portion 142 of 140 does not need to fill the two gaps with different thicknesses with sealing members of different sizes. Moreover, the high thermal conductivity of the thermally conductive sealing member 160 can also reduce the thermal resistance of the semiconductor package 100 , thereby improving the heat dissipation efficiency.

In one embodiment, the semiconductor package 100 may further include a supporting ring 170 surrounding the surrounding area of the substrate 110 to increase the structural strength of the semiconductor package 100 and thereby reduce warpage of the semiconductor package 100 . In one embodiment, the support ring 170 The material can include a material with high hardness such as metal, which can surround the periphery of the substrate 110 to enhance the structural strength of the substrate 110, thereby reducing warpage caused by differences in coefficients of thermal expansion (Coefficient of Thermal Expansion, CTE) between various materials. song problem.

In one embodiment, the semiconductor package 100 may further include an adhesive layer 180 disposed between the thermally conductive seal 160 and the second electronic component 130 and between the thermally conductive seal 160 and the substrate 110 to attach the thermally conductive seal 160 on the second electronic component 130 and the substrate 110 . Specifically, the adhesive layer 180 can be attached to the thermally conductive sealing member 160 first, and then the thermally conductive sealing member 160 is disposed around the first electronic component 120 to be supported and attached to the second electronic component 130 and the substrate 110 . In one embodiment, the adhesive layer 180 may include a polyimide (PI) film. In addition, the adhesive layer 180 can include an extension area 182 that can be extended and attached to the upper surface of the support ring 170 .

FIG. 3 is a schematic partial cross-sectional view of a semiconductor package according to an embodiment of the disclosure. FIG. 4 is a schematic perspective view of some components of a semiconductor package according to an embodiment of the disclosure. It must be noted here that the semiconductor package 100 of this embodiment is similar to the semiconductor package 100 of the preceding embodiment, therefore, this embodiment follows the component numbers and part of the content of the previous embodiment, where the same number is used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and this embodiment will not be repeated. The following will mainly focus on the differences between the semiconductor package 100 of this embodiment and the semiconductor package 100 of the previous embodiments.

In one embodiment, the semiconductor package 100a may further include an auxiliary sealing ring 190, It is arranged around the heat conduction seal 160a to further prevent the liquid metal heat conduction layer 150 from overflowing. In this embodiment, the auxiliary sealing ring 190 and the thermally conductive sealing member 160a can be arranged side by side on the substrate 110 . In an embodiment, the material of the auxiliary sealing ring 190 may include foam. In one embodiment, the thermal conductivity of the auxiliary seal ring 190 may be approximately less than the thermal conductivity of the thermally conductive seal 160a. For example, the thermal conductivity of the auxiliary sealing ring 190 in this embodiment is approximately between 0.04W/mK and 0.05W/mK. In one embodiment, the compressibility of the auxiliary seal ring 190 may be approximately less than the compressibility of the thermally conductive seal 160 . For example, the compression ratio of the auxiliary sealing ring 190 in this embodiment may be less than 70%. Of course, this embodiment is only used for illustration, and the disclosure is not limited thereto. In this embodiment, as shown in FIG. 4 , the thermally conductive sealing member 160 a may be a discontinuous but connected strip structure to surround the first electronic component 120 together.

In summary, in the semiconductor package of the present disclosure, the first electronic component and the second electronic component are arranged side by side on the substrate, and the thermally conductive seal surrounds the first electronic component and fills the space between the first electronic component and the second electronic component. The gap and the gap between the second electronic component and the heat dissipation component. In this way, the semiconductor package 100 can take advantage of the high compressibility of the thermally conductive sealant, so that the thermally conductive sealant can simultaneously fill the gap between the heat sink element and the first electronic component and the gap between the second electronic component and the heat sink element without using Seals of different sizes fill the two gaps of different thicknesses. In addition, the high thermal conductivity of the thermally conductive sealing member can also reduce the thermal resistance of the semiconductor package, thereby improving the heat dissipation efficiency.

100: Semiconductor packaging

110: Substrate

120: The first electronic component

130: the second electronic component

140: cooling element

142: Extension

150: liquid metal heat conduction layer

160: thermal seal

170: support ring

180: Adhesive layer

182: Extended area

Claims (10)

A semiconductor package comprising: a substrate; a first electronic component disposed on the substrate; a second electronic component, arranged side by side with the first electronic component on the substrate; A heat dissipation element is disposed on the first electronic component and includes an extension extending above the second electronic component; A liquid metal heat conduction layer is arranged between the heat dissipation element and the first electronic component and forms a thermal coupling with the heat dissipation element and the first electronic component; The thermally conductive seal surrounds the first electronic component and fills the gap between the first electronic component and the second electronic component and the gap between the second electronic component and the extension. The semiconductor package as claimed in claim 1, wherein the first electronic component comprises an active component, and the second electronic component comprises a passive component. The semiconductor package as claimed in claim 1, wherein the second electronic component is disposed around the first electronic component. The semiconductor package as claimed in claim 1, wherein the thermally conductive seal comprises an integrally formed ring structure. The semiconductor package as claimed in claim 1, wherein the thermally conductive sealing member comprises a plurality of discontinuous but connected strip structures to surround the first electronic component together. The semiconductor package of claim 1, wherein the thermal conductivity of the thermally conductive seal is greater than 1 W/mK. The semiconductor package of claim 1, wherein the thermally conductive seal has a compressibility of less than 70%. The semiconductor package as claimed in claim 1, further comprising a support ring surrounding the surrounding area of the substrate. The semiconductor package as claimed in claim 1 further comprises an adhesive layer disposed between the thermally conductive sealing member and the second electronic component and between the thermally conductive sealing member and the substrate. The semiconductor package as claimed in claim 1, further comprising an auxiliary sealing ring disposed around the thermally conductive sealing member.

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