TWM632389U - display device - Google Patents

Abstract

The present application relates to a display device comprising a first substrate, a first electrode layer, a photoelectric conversion layer, a second electrode layer, a liquid crystal layer, a third electrode layer and a second substrate. The first electrode layer is disposed on the first substrate. The photoelectric conversion layer is arranged on the first electrode layer and partially covers the first electrode layer. The second electrode layer is disposed on the photoelectric conversion layer. The liquid crystal layer is disposed on the first electrode layer and the second electrode layer. The third electrode layer is disposed on the liquid crystal layer. The second substrate is disposed on the third electrode layer. The first electrode layer, the photoelectric conversion layer and the second electrode layer form a current path, and the first electrode layer and the third electrode layer form an electric field to control the liquid crystal layer.

Description

display device

The present application relates to a display device, in particular to a display device having a photoelectric conversion structure.

With the development of science and technology, the structure of the display device is also becoming more and more complicated. For example, some display devices are provided with a photoelectric conversion structure, so that the display device has a combined function of display and photoelectric conversion at the same time. However, the additionally provided photoelectric conversion structure causes the following problems. First, a display device is usually formed by stacking a plurality of film layers, and additional photoelectric conversion structures disposed in the plurality of film layers will inevitably lead to an increase in the thickness of the display device. The increase in thickness goes against the trend of modern electronic products pursuing lightness, thinness, shortness and smallness. Furthermore, the additionally disposed photoelectric conversion structure will also make the preparation process cumbersome, resulting in a substantial increase in cost. Therefore, how to improve the above problems and provide a display device with photoelectric conversion function and a manufacturing method thereof has become an urgent problem to be solved in the art.

Embodiments of the present application provide a display device, which solves the problems that the current display device with a photoelectric conversion function has a large thickness and a complicated manufacturing process.

In order to solve the above technical problems, this application is implemented as follows:

In a first aspect, a method for preparing a display device is provided, which includes: providing a first substrate; forming a first electrode layer on the first substrate; forming a photoelectric conversion layer on the first electrode layer, and the photoelectric conversion layer partially covers the first substrate electrode layer; forming a second electrode layer on the photoelectric conversion layer; forming a liquid crystal layer on the first electrode layer and the second electrode layer; providing a second substrate; forming a third electrode layer on the second substrate; and combining the second substrate on the first substrate with the liquid crystal layer. The first electrode layer, the photoelectric conversion layer and the second electrode layer form a current path, and the first electrode layer and the third electrode layer form an electric field to control the liquid crystal layer.

In some embodiments, the step of providing the first substrate includes: providing a first polarizing layer; and forming a first base layer on the first polarizing layer.

In some embodiments, after providing the first substrate and before forming the first electrode layer on the first substrate, the preparation method further includes: forming a filter layer on the first substrate, wherein the filter layer includes a plurality of filter layers. light unit.

In some embodiments, two adjacent ones of the plurality of filter units have adjacent regions, and the step of forming the photoelectric conversion layer on the first electrode layer is: forming the photoelectric conversion layer on the first electrode layer on the adjacent area, so that the projection of the adjacent area in the vertical direction overlaps the projection of the photoelectric conversion layer in the vertical direction.

In some embodiments, the step of forming the photoelectric conversion layer on the first electrode layer is as follows: forming the photoelectric conversion layer on the adjacent area on the first electrode layer and the plurality of filter units, and making the plurality of filter units The projections of two adjacent ones in the vertical direction respectively overlap with the projections of the photoelectric conversion layer in the vertical direction.

In some embodiments, the step of forming the photoelectric conversion layer on the first electrode layer is: forming the photoelectric conversion layer on the periphery of the first electrode layer.

In some embodiments, after forming the second electrode layer on the photoelectric conversion layer and before forming the liquid crystal layer on the first electrode layer, the preparation method further includes: forming a protective layer on the photoelectric conversion layer and/or the second electrode layer.

In some embodiments, the thickness of the first electrode layer in the vertical direction is between 0.01-1 μm, the thickness of the photoelectric conversion layer in the vertical direction is between 0.05-5 μm, and the thickness of the second electrode layer in the vertical direction The thickness is between 0.05 and 5 μm.

In some embodiments, the length and/or width of the photoelectric conversion layer in the horizontal direction is between 0.5-50 μm, and the length and/or width of the second electrode layer in the horizontal direction is between 0.5-50 μm between.

In some embodiments, the step of providing the second substrate includes: providing a second polarizing layer, forming a second base layer on the second polarizing layer; and forming a driving circuit on the second base layer.

In a second aspect, a method for manufacturing a display device is provided, which includes: providing a first substrate; forming a first electrode layer on the first substrate; forming a photoelectric conversion layer on the first electrode layer, and the photoelectric conversion layer partially covers the first substrate electrode layer; forming a second electrode layer on the photoelectric conversion layer; providing a second substrate, forming a third electrode layer on the second substrate; disposing a liquid crystal layer on the three electrode layers; and combining the second substrate with the liquid crystal layer on the second substrate on a substrate. The first electrode layer, the photoelectric conversion layer and the second electrode layer form a current path, and the first electrode layer and the third electrode layer form an electric field to control the liquid crystal layer.

In a third aspect, a display device is provided, which includes a first substrate, a first electrode layer, a photoelectric conversion layer, a second electrode layer, a liquid crystal layer, a third electrode layer, and a second substrate. The first electrode layer is disposed on the first substrate. The photoelectric conversion layer is arranged on the first electrode layer and partially covers the first electrode layer. The second electrode layer is disposed on the photoelectric conversion layer. The liquid crystal layer is disposed on the first electrode layer and the second electrode layer. The third electrode layer is disposed on the liquid crystal layer. The second substrate is disposed on the third electrode layer. The first electrode layer, the photoelectric conversion layer and the second electrode layer form a current path, and the first electrode layer and the third electrode layer form an electric field to control the liquid crystal layer.

In some embodiments, the first substrate includes a first polarizing layer and a first base layer. The first base layer is disposed between the first polarizing layer and the first electrode layer.

In some embodiments, the display device further includes a filter layer disposed between the first substrate and the first electrode layer, wherein the filter layer includes a plurality of filter units.

In some embodiments, there are adjacent areas between two adjacent ones of the plurality of filter units, and the projection of the adjacent area in the vertical direction overlaps with the projection of the photoelectric conversion layer in the vertical direction.

In some embodiments, the adjacent area may be an overlap area or a gap area between two adjacent filter units among the plurality of filter units.

In some embodiments, the projections of two adjacent ones of the plurality of filter units in the vertical direction respectively partially overlap with the projections of the photoelectric conversion layer in the vertical direction.

In some embodiments, the photoelectric conversion layer and the second electrode layer are disposed on the periphery of the first electrode layer.

In some embodiments, the display device further includes a protective layer disposed between the photoelectric conversion layer and the liquid crystal layer and/or between the second electrode layer and the liquid crystal layer.

In some embodiments, the thickness of the first electrode layer in the vertical direction is between 0.01-1 μm, the thickness of the photoelectric conversion layer in the vertical direction is between 0.05-5 μm, and the thickness of the second electrode layer in the vertical direction The thickness is between 0.05 and 5 μm.

In some embodiments, the length and/or width of the photoelectric conversion layer in the horizontal direction is between 0.5-50 μm, and the length and/or width of the second electrode layer in the horizontal direction is between 0.5-50 μm between.

In some embodiments, the second substrate includes a driving circuit, a second base layer, and a second polarizing layer. The driving circuit is arranged on the third electrode layer. The second base layer is disposed on the driving circuit. The second polarizing layer is disposed on the second base layer.

In this application, the photoelectric conversion layer, the first electrode layer and the second electrode layer in the display device form a photoelectric conversion structure, and the liquid crystal layer, the first electrode layer and the third electrode layer form a display structure, which makes the display of the present application The device has both a photoelectric conversion function and a display function. Further, since the photoelectric conversion structure and the display structure share the first electrode layer, the thickness of the display device can also be effectively reduced, and the manufacturing process can be simplified. Based on the above configuration, the present application realizes a display device with a low thickness, a simple manufacturing process, and a photoelectric conversion function and a manufacturing method thereof.

In order to facilitate the understanding of the technical features, content and advantages of the present application and the effects that can be achieved, the present application is described in detail as follows with the accompanying drawings and in the form of embodiments, and the drawings used therein are only for the purpose For the purpose of illustrating and assisting the description, it may not necessarily be the actual scale and exact configuration after the application is implemented. Therefore, the proportion and configuration relationship of the attached drawings should not be interpreted or limited to the scope of the right of the application in actual implementation. Say Ming.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed as having meanings consistent with their meanings in the context of the related art and this application, and are not to be construed as idealized or excessive Formal meaning unless expressly so defined herein.

Please refer to FIG. 1 , which is a schematic diagram of a display device according to a first embodiment of the present application. As shown in the figure, the display device 1A includes a first substrate 10 , a first electrode layer 11 , a photoelectric conversion layer 12 , a second electrode layer 13 , a liquid crystal layer 14 , a third electrode layer 15 and a second substrate 16 . Through the above configuration, the present application realizes a display device having a photoelectric conversion function. In order to make the display device of the present application more clear and comprehensible, various elements of the present application and variations thereof will be explained in detail below.

In some embodiments, the first substrate 10 includes a first polarizing layer 100 and a first base layer 101 . Wherein, the first polarizing layer 100 may be a multi-layer structure. For example, the first polarizing layer 100 may be composed of a supporting sublayer (eg, a TAC film), a polarizing sublayer (eg, a PVA film), an anti-glare sublayer (eg, an AG film), a low reflection/non-reflection sublayer ( For example, LR/AR films), adhesive sublayers (eg, PSA), protective sublayers, optical compensation sublayers (eg, WVDLC), etc., are formed by stacking sublayers. However, the present application is not limited thereto. In other embodiments, light polarizing layers known to those with ordinary skill in the art can be applied in the present application.

The first base layer 101 is disposed between the first polarizing layer 100 and the first electrode layer 11 . In some embodiments, the first base layer 101 may be a transparent material. For example, the first base layer 101 may be glass, such as alkali-containing glass, alkali-free glass, or tempered glass after physical/chemical treatment. Alternatively, the first base layer 101 may also be plastic, such as polyethylene terephthalate (PET), polycarbonate (PC), polymethylmethacrylate (PMMA), Or polycycloolefin polymer (Polycycloolefin Polymer, COP). However, the present application is not limited thereto. In other embodiments, materials well known to those skilled in the art can also be used as the material of the first base layer 101 of the present application.

The first electrode layer 11 is disposed on the first substrate 10 . In some embodiments, the first electrode layer 11 is a transparent conductive oxide (Transparent Conductive Oxide, TCO), which may include Indium Tin Oxide (ITO), Zinc Oxide Aluminum (AZO), oxide Tin Antimony Oxide (ATO), Zinc oxide (ZnO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Zinc Tin Oxide (IGZTO), or any of them combination, or other suitable materials for conducting signals and/or conducting current. In some embodiments, the first electrode layer 11 is preferably zinc-aluminum oxide.

In some embodiments, the thickness T1 of the first electrode layer 11 in the vertical direction is between 0.01 and 1 μm. In this application, the vertical direction refers to the direction in which the respective film layers are stacked in sequence. The thickness T1 of the first electrode layer 11 may be 0.01 μm, 0.05 μm, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, 1.0 μm, or the above Any range of values.

The photoelectric conversion layer 12 is disposed on the first electrode layer 11 and partially covers the first electrode layer 11 . In other words, the photoelectric conversion layer 12 is only disposed on a part of the first electrode layer 11 instead of completely overlapping the first electrode layer 11 in the vertical direction. In this application, the photoelectric conversion layer 12 refers to a film layer that converts light energy into electrical energy by the photo-voltaic effect. For example, the photoelectric conversion layer 12 may include a silicon thin film such as Amorphous Silicon or Microcrystalline Silicon, a Dye-Sensitized Solar Cell (DSSC), an organic conductive polymer ( Organic/Polymer Solar Cell), II-IV semiconductor compounds, or other suitable materials. Wherein, the photoelectric conversion layer 12 is preferably an opaque film layer, which may be an opaque film layer itself, or a film layer formed by adding colored dyes to the transparent film layer itself.

In some embodiments, the thickness T2 of the photoelectric conversion layer 12 in the vertical direction is between 0.05 and 5 μm. The thickness T2 of the photoelectric conversion layer 12 may be 0.05 μm, 0.1 μm, 0.5 μm, 1.0 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3.0 μm, 3.5 μm, 4.0 μm, 4.5 μm, 5.0 μm, or the above values any range in .

The second electrode layer 13 is disposed on the photoelectric conversion layer 12 . In some embodiments, the second electrode layer 13 is a transparent conductive oxide, which may contain similar or the same material as the first electrode layer 11 . For example, the second electrode layer 13 may include indium tin oxide, zinc aluminum oxide, tin antimony oxide, zinc oxide, indium gallium zinc oxide, indium gallium zinc tin oxide, or any combination thereof, or other suitable materials. However, the present application is not limited thereto.

In other embodiments, the second electrode layer 13 may contain a different material than the first electrode layer 11 . For example, the second electrode layer 13 may be a metal material including copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, silver, or other metal materials with good conductivity, or any combination thereof. In some embodiments, the second electrode layer 13 is preferably aluminum or silver.

In some embodiments, the thickness T3 of the second electrode layer 13 in the vertical direction is between 0.05˜5 μm. The thickness T3 of the second electrode layer 13 may be 0.05 μm, 0.1 μm, 0.5 μm, 1.0 μm, 1.5 μm, 2.0 μm, 2.5 μm, 3.0 μm, 3.5 μm, 4.0 μm, 4.5 μm, 5.0 μm, or the above Any range of values.

In the present application, the second electrode layer 13 is configured to conduct current. More specifically, when the photoelectric conversion layer 12 receives light from the outside and generates a photoelectric effect, the first electrode layer 11 , the photoelectric conversion layer 12 and the second electrode layer 13 form a current path. Therein, the current path may be connected to the battery of the display device 1A to store the current generated by the photoelectric effect as chemical energy. Alternatively, the current path may be connected to other elements of the display device 1A, and the current generated by the photoelectric effect may be used to drive the elements.

In some embodiments, the length L1 and/or the width of the photoelectric conversion layer 12 in the horizontal direction is between 0.5 and 50 μm, and the length L2 and/or the width of the second electrode layer 13 in the horizontal direction is between Between 0.5~50μm.

The liquid crystal layer 14 is disposed on the first electrode layer 11 and the second electrode layer 13 . Further, the liquid crystal layer 14 coats the photoelectric conversion layer 12 and the exposed surfaces of the second electrode layer 13 . From another perspective, the liquid crystal layer 14 has an accommodating space, and the photoelectric conversion layer 12 and the second electrode layer 13 are located in the accommodating space of the liquid crystal layer 14 . In this way, the first electrode layer 11 , the photoelectric conversion layer 12 and the second electrode layer 13 as the photoelectric conversion structure do not significantly increase the thickness of the entire display device 1A, and even the display device 1A with photoelectric conversion function can be A display device without a photoelectric conversion function has the same thickness.

The third electrode layer 15 is disposed on the liquid crystal layer 14 . In some embodiments, the third electrode layer 15 is a transparent conductive oxide, which may contain similar or the same material as the first electrode layer 11 . For example, the third electrode layer 15 may include indium tin oxide, zinc aluminum oxide, tin antimony oxide, zinc oxide, indium gallium zinc oxide, indium gallium zinc tin oxide, or any combination thereof, or other suitable materials. However, the present application is not limited thereto. In other embodiments, the third electrode layer 15 may contain a different material than the first electrode layer 11 .

In the present application, the first electrode layer 11 and the third electrode layer 15 form an electric field to control the liquid crystal layer 14 . In other words, the first electrode layer 11 and the third electrode layer 15 can be connected to the driving circuit components by means of signal lines, power lines, etc., and receive signals or currents from the driving circuit components to generate an electric field. It is worth mentioning that in the case where the photoelectric conversion structure and the display structure share the third electrode layer 15, the photoelectric conversion structure and the display structure have the same potential level at the positive terminal, so that the photoelectric conversion structure and the display structure can operate simultaneously.

In some embodiments, the second substrate 16 includes a driving circuit 160 , a second base layer 161 and a second polarizing layer 162 .

The driving circuit 160 is disposed on the third electrode layer 15 . Specifically, the driving circuit 160 may be a thin film transistor array (TFT array) including a plurality of transistors and a plurality of transmission lines. A plurality of transistors are electrically connected through a plurality of transmission lines. Wherein, each transistor may include a gate (Gate), a gate dielectric layer, a semiconductor layer, a source (Source), a drain (Drain), and other elements known to those skilled in the art.

In some embodiments, the material of the gate electrode may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, or other metal materials with good electrical conductivity, or any combination thereof. In other embodiments, the material of the gate electrode may also be a non-metallic material, as long as the material used has conductivity.

In some embodiments, the gate dielectric layer may comprise silicon oxide, silicon nitride, silicon oxynitride, silicon methane, high-k dielectric materials, or any combination thereof. Alternatively, the gate dielectric layer may comprise metal oxides or silicates of hafnium, aluminum, zirconium, lanthanum, magnesium, barium, titanium, lead, or any combination of the foregoing. The gate dielectric layer may be formed by chemical vapor deposition (CVD) or spin coating. For example, the chemical vapor deposition method can be low pressure chemical vapor deposition (LPCVD), low temperature chemical vapor deposition (LTCVD), rapid temperature rise chemical vapor deposition (rapid thermal chemical vapor deposition, RTCVD), plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD), atomic layer deposition (atomic layer deposition, ALD) of atomic layer chemical vapor deposition, but Not limited to this.

In some embodiments, the semiconductor layer may include: elemental semiconductors, such as: amorphous silicon (Amorphous-Si), polycrystalline silicon (Poly-Si), germanium (Germanium); compound semiconductors, such as: gallium nitride (Gallium Nitride, GaN) ), Silicon Carbide, Gallium Arsenide, Gallium Phosphide, Indium Phosphide, Indium Arsenide and/or Indium Antimonide ; Alloy semiconductors, such as: silicon germanium alloy (SiGe), gallium arsenide phosphorus (GaAsP), aluminum indium arsenic (AlInAs), aluminum gallium arsenide (AlGaAs), indium gallium arsenide (GaInAs), indium gallium phosphorus alloy ( GaInP) and/or Gallium Indium Arsenide Phosphorus (GaInAsP); metal oxides, such as indium gallium zinc oxide, indium zinc oxide, indium gallium tin zinc oxide; organic semiconductors, such as polycyclic aromatic compounds; random combination.

In some embodiments, the materials of the source and drain electrodes may include: copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, or other metal materials with good electrical conductivity, or any of them combination. In other embodiments, the material of the source electrode and the drain electrode can also be a non-metallic material, as long as the material used has conductivity.

In some embodiments, the material of the transmission line may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, or other metal materials with good electrical conductivity, or any combination thereof. In other embodiments, the material of the transmission line may also be a non-metallic material, as long as the material used has conductivity.

The second base layer 161 is disposed on the driving circuit 160 . In some embodiments, the second base layer 161 may be a transparent material. For example, the second base layer 161 may be glass, such as alkali-containing glass, alkali-free glass, or tempered glass after physical/chemical treatment. Alternatively, the second base layer 161 may also be plastic, such as polyethylene terephthalate, polycarbonate, polymethyl methacrylate, or polycycloolefin polymer. However, the present application is not limited thereto. In other embodiments, materials well known to those skilled in the art can also be used as the material of the second base layer 161 of the present application.

The second polarizing layer 162 is disposed on the second base layer 161 . Wherein, the second polarizing layer 162 may be a multi-layer structure. For example, the second polarizing layer 162 may be composed of a supporting sublayer (eg, a TAC film), a polarizing sublayer (eg, a PVA film), an anti-glare sublayer (eg, an AG film), a low reflection/non-reflection sublayer ( For example, LR/AR films), adhesive sublayers (eg, PSA), protective sublayers, optical compensation sublayers (eg, WVDLC), etc., are formed by stacking sublayers. However, the present application is not limited thereto. In other embodiments, light polarizing layers known to those with ordinary skill in the art can be applied in the present application.

Based on the above configuration, the present application realizes a display device with a low thickness, a simple process and a photoelectric conversion function. However, the above-described embodiment is only one embodiment of the present application. In the following, various implementation aspects will be further provided.

Please refer to FIG. 2 , which is a schematic diagram of a display device according to a second embodiment of the present application. As shown in the figure, the display device 1B includes a first substrate 10 , a first electrode layer 11 , a photoelectric conversion layer 12 , a second electrode layer 13 , a liquid crystal layer 14 , a third electrode layer 15 and a second substrate 16 . In this embodiment, the same component symbols in FIG. 2 and FIG. 1 refer to components with similar or the same function, and the detailed content can be referred to the above, which will not be repeated here.

Compared with the first embodiment, the display device 1B of the second embodiment further includes a protective layer 17 . Specifically, the protective layer 17 is disposed between the photoelectric conversion layer 12 and the liquid crystal layer 14 and/or between the second electrode layer 13 and the liquid crystal layer 14 to protect the photoelectric conversion layer 12 and/or the second electrode layer 14 before disposing the liquid crystal layer 14 The electrode layer 13 is not affected by subsequent processes. For example, the protective layer 17 may be a light-transmitting polymer protective layer 17, but is not limited thereto.

Please refer to FIG. 3 , which is a schematic diagram of a display device according to a third embodiment of the present application. As shown in the figure, the display device 1C includes a first substrate 10 , a first electrode layer 11 , a photoelectric conversion layer 12 , a second electrode layer 13 , a liquid crystal layer 14 , a third electrode layer 15 and a second substrate 16 . In this embodiment, the same element symbols in FIG. 3 and FIG. 1 refer to elements having similar or identical functions, and the detailed contents thereof can be referred to the above, which will not be repeated here.

In the first embodiment, the photoelectric conversion layer 12 and the second electrode layer 13 are disposed in the central region (or, may be referred to as a display region) of the display device 1A. However, the present application does not limit the location of the photoelectric conversion layer 12 . In the third embodiment, the photoelectric conversion layer 12 and the second electrode layer 13 may be disposed on the periphery of the first electrode layer 11 . For example, the photoelectric conversion layer 12 and the second electrode layer 13 of the second embodiment may be disposed in the frame area (or may be referred to as a non-display area) of the display device 1C. By disposing a part of the photoelectric conversion structure (ie, the photoelectric conversion layer 12 and the second electrode layer 13 ) in the frame area or non-display area of the display device, the configuration of the display device can be more diverse.

It is worth mentioning that although FIG. 1 and FIG. 3 respectively show that the photoelectric conversion layer 12 and the second electrode layer 13 can be located in the center area or the frame area of the display panel, the present application is not limited to these two components can only be arranged on one of the above two. In other words, the photoelectric conversion layer 12 and the second electrode layer 13 can also be disposed in the center area and the frame area of the display panel at the same time, so that the display panel has more areas where the photoelectric effect can be generated, or the display panel has more elements. the design of.

Please refer to FIG. 4 , which is a schematic diagram of a display device according to a fourth embodiment of the present application. As shown in the figure, the display device 1D includes a first substrate 10 , a first electrode layer 11 , a photoelectric conversion layer 12 , a second electrode layer 13 , a liquid crystal layer 14 , a third electrode layer 15 and a second substrate 16 . In this embodiment, the same element symbols in FIG. 4 and FIG. 1 refer to elements having similar or the same functions, and the detailed contents thereof can be referred to the above, which will not be repeated here.

In this embodiment, the display device 1D further includes a filter layer 18 disposed between the first substrate 10 and the first electrode layer 11 , wherein the filter layer 18 includes a plurality of filter units. Specifically, the filter unit refers to an element that can filter light of a specific wavelength.

For example, the first filter unit 180a of the filter units can filter visible light with wavelengths from 380 nm to 450 nm and wavelengths from 495 nm to 750 nm, and pass light with wavelengths from 450 nm to 495 nm. In other words, the first filter unit 180a may be a blue filter unit for filtering visible light other than blue. The second filter unit 180b in the filter unit can filter visible light with wavelengths of 380 nm to 495 nm and wavelengths of 570 nm to 750 nm, and pass light with wavelengths of 495 nm to 570 nm. In other words, the second filter unit 180b may be a green filter unit for filtering visible light other than green. The third filter unit 180c in the filter unit can filter visible light with wavelengths from 380 nm to 620 nm and pass light with wavelengths from 620 nm to 750 nm. In other words, the third filter unit 180c may be a red filter unit for filtering visible light other than red.

It is worth mentioning that the filter unit of the present application is not limited to the above-mentioned three filter units. In other embodiments, the filter unit may include any combination of the above filter units, and may also include filter units of other colors and any combination thereof.

In some embodiments, there are adjacent areas between two adjacent ones of the plurality of filter units, and the projections of the adjacent areas in the vertical direction overlap with the projections of the photoelectric conversion layer 12 in the vertical direction. The adjacent area may be an overlapping area (not shown) or a gap area G (as shown in FIG. 4 ) of two adjacent filter units among the plurality of filter units. In other words, two adjacent filter units among the plurality of filter units may be close to each other and have a gap (that is, forming a gap area G), or may overlap each other (that is, forming an overlapping area). .

Taking the adjacent region as the gap region G as an example, in the prior art, the light emitted by the backlight source of the display device may leak out from the gap region G between two adjacent filter units, thereby reducing the performance of the display device. display quality. Therefore, compared with the prior art that requires an additional black matrix (Black Martix), the present application provides a photoelectric conversion layer 12 that can absorb light and exhibit partial transparency or complete opacity in the gap region G, so as to have a photoelectric conversion layer 12 in the gap region G. In the case of the conversion function, it is additionally used as a light-shielding element, thereby more effectively reducing the arrangement of additional elements (eg, black matrix).

Based on the above, in order to further enhance the light-shielding effect, the photoelectric conversion layer 12 of the present application may have a larger width, so as to shield the light emitted by the backlight source as much as possible. For example, in some embodiments, the projections of two adjacent filter units in the vertical direction respectively overlap with the projections of the photoelectric conversion layer 12 in the vertical direction (as shown in FIG. 4 ). The size of the overlapping area may be determined according to the degree of light leakage of the backlight source.

Please refer to FIG. 5 , which is a schematic diagram of a display device according to a fifth embodiment of the present application. As shown in the figure, the display device 1E includes a first substrate 10 , a first electrode layer 11 , a photoelectric conversion layer 12 , a second electrode layer 13 , a liquid crystal layer 14 , a third electrode layer 15 and a second substrate 16 . In this embodiment, the same component symbols in FIG. 5 and FIG. 4 refer to components having similar or the same function, and the detailed content thereof can be referred to the above, which will not be repeated here.

Compared with the fourth embodiment, the display device 1E of the fifth embodiment further includes a protective layer 17 . Specifically, the protective layer 17 is disposed between the photoelectric conversion layer 12 and the liquid crystal layer 14 and/or between the second electrode layer 13 and the liquid crystal layer 14 to protect the photoelectric conversion layer 12 and/or the second electrode layer 14 before disposing the liquid crystal layer 14 The electrode layer 13 is not affected by subsequent processes. For example, the protective layer 17 may be a light-transmitting polymer protective layer 17, but is not limited thereto.

Please refer to FIG. 6 , which is a schematic diagram of a display device according to a sixth embodiment of the present application. As shown in the figure, the display device 1F includes a first substrate 10 , a first electrode layer 11 , a photoelectric conversion layer 12 , a second electrode layer 13 , a liquid crystal layer 14 , a third electrode layer 15 , and a second substrate 16 . In this embodiment, the same element symbols in FIG. 6 and FIG. 4 refer to elements having similar or the same functions, and the details thereof can be referred to the above, which will not be repeated here.

In the fourth embodiment, the photoelectric conversion layer 12 and the second electrode layer 13 are disposed in the central region (or, may be referred to as a display region) of the display device 1A. However, the present application does not limit the location of the photoelectric conversion layer 12 . In the sixth embodiment, the photoelectric conversion layer 12 and the second electrode layer 13 may be disposed on the periphery of the first electrode layer 11 . For example, the photoelectric conversion layer 12 and the second electrode layer 13 of the sixth embodiment may be disposed in the frame area (or may be referred to as a non-display area) of the display device 1A. By disposing a part of the photoelectric conversion structure (ie, the photoelectric conversion layer 12 and the second electrode layer 13 ) in the frame area or the non-display area of the display device 1A, the configuration of the display device can be more diverse.

Please refer to FIG. 7 , which is a schematic diagram of a display device according to a seventh embodiment of the present application. As shown in the figure, the display device 1G includes a first substrate 10 , a first electrode layer 11 , a photoelectric conversion layer 12 , a second electrode layer 13 , a liquid crystal layer 14 , a third electrode layer 15 and a second substrate 16 . In this embodiment, the same element symbols in FIG. 7 and FIG. 5 refer to elements having similar or the same function, and the detailed content can be referred to the above, which will not be repeated here.

In the fifth embodiment, the photoelectric conversion layer 12 , the second electrode layer 13 and the protective layer 17 are disposed in the central region (or, may be referred to as a display region) of the display device 1E. However, the present application does not limit the location of the photoelectric conversion layer 12 . In the seventh embodiment, the photoelectric conversion layer 12 , the second electrode layer 13 and the protective layer 17 may be disposed on the periphery of the first electrode layer 11 . For example, the photoelectric conversion layer 12 , the second electrode layer 13 and the protective layer 17 of the seventh embodiment may be disposed in the frame area (or may be referred to as a non-display area) of the display device 1G. By disposing a part of the photoelectric conversion structure (ie, the photoelectric conversion layer 12 and the second electrode layer 13 ) and the protective layer 17 in the frame area or non-display area of the display device 1G, the configuration of the display device can be more diverse.

Please refer to FIG. 1 and FIG. 8 at the same time. FIG. 8 is a flowchart of a manufacturing method of a display device according to some embodiments of the present application. As shown in the figure, the preparation method of the display device includes:

Step S10 : providing the first substrate 10 .

In some embodiments, step S10 may include the following sub-steps:

The first sub-step: providing the first polarizing layer 100 .

The second sub-step: forming the first base layer 101 on the first polarizing layer 100 .

Step S12 : forming the first electrode layer 11 on the first substrate 10 . In some embodiments, the thickness T3 of the first electrode layer 11 in the vertical direction is between 0.01 and 1 μm, and the length L1 and/or the width of the first electrode layer 11 in the horizontal direction may be similar or the same as the first electrode layer 11 . A substrate 10 .

Step S14 : forming the photoelectric conversion layer 12 on the first electrode layer 11 , and the photoelectric conversion layer 12 partially covers the first electrode layer 11 . More specifically, the photoelectric conversion layer 12 is formed on the first portion of the first electrode layer 11 and exposes the second portion of the first electrode layer 11 .

In some embodiments, the thickness T3 of the photoelectric conversion layer 12 in the vertical direction is between 0.05˜5 μm, and the length L1 and/or the width of the photoelectric conversion layer 12 in the horizontal direction is between 0.5˜50 μm.

Step S16 : forming the second electrode layer 13 on the photoelectric conversion layer 12 . In some embodiments, the second electrode layer 13 and the photoelectric conversion layer 12 may completely overlap and expose the second portion of the first electrode layer 11 .

In some embodiments, the thickness T3 of the second electrode layer 13 in the vertical direction is between 0.05-5 μm, and the length L1 and/or the width of the second electrode layer 13 in the horizontal direction is between 0.5-50 μm between.

Step S18 : forming the liquid crystal layer 14 on the first electrode layer 11 and the second electrode layer 13 . Further, the liquid crystal layer 14 covers the exposed surfaces of the second electrode layer 13 and the photoelectric conversion layer 12 .

Step S20 : providing the second substrate 16 .

Wherein, step S20 includes the following sub-steps:

The first sub-step: providing the second polarizing layer 162 .

The second sub-step: forming the second base layer 161 on the second polarizing layer 162 .

The third sub-step: forming the driving circuit 160 on the second base layer 161 .

Step S22 : forming the third electrode layer 15 on the second substrate 16 . More specifically, the third electrode layer 15 is attached to or closest to the driving circuit 160 .

Step S24 : combining the second substrate 16 on the first substrate 10 having the liquid crystal layer 14 . The liquid crystal layer 14 is located on the side of the third electrode layer 15 away from the driving circuit 160 .

Based on the above steps, the display device 1A shown in FIG. 1 can be obtained. The configuration and composition of each element may refer to the first embodiment above, which will not be repeated here.

It is worth mentioning that the sequence of the above steps is not fixed and indispensable, and some steps can be performed at the same time, omitted or added. The order and number of steps in the preparation method of the present application are limited.

In some embodiments, step S18 and step S24 may be adjusted. For example, in these embodiments, steps S10 to S16 may be performed in sequence according to the above steps to form the first substrate 10 , the first electrode layer 11 , the photoelectric conversion layer 12 and the second electrode layer stacked in sequence 13. Next, steps S20 to S22 are performed in sequence according to the above steps, so as to form the second substrate 16 and the third electrode layer 15 stacked in sequence. Next, the liquid crystal layer 14 is formed on the third electrode layer 15 . Finally, the second substrate 16 having the liquid crystal layer 14 is assembled on the first substrate 10 .

In other words, in these embodiments, the display device of the present application is still divided into two parts, which are formed separately and then assembled. The only difference is: the sequence of the formation process. Therefore, it can be clearly understood from the above description that the feature of the present application lies in the specific structure after the display device is formed, and should not be limited to a specific sequence of steps.

Please refer to Figure 2 and Figure 8 at the same time. In some embodiments, after step S16 and before step S18 , the preparation method may further include: forming a protective layer 17 on the photoelectric conversion layer 12 and/or the second electrode layer 13 . Under the condition that the remaining steps remain unchanged, the embodiments can form the display device 1B as shown in FIG. 2 .

Please refer to Figure 3 and Figure 8 at the same time. In some embodiments, the step S14 may be: forming the photoelectric conversion layer 12 on the periphery of the first electrode layer 11 . Under the condition that the remaining steps remain unchanged, the embodiments can form the display device 1C as shown in FIG. 3 .

Please refer to Figure 4 and Figure 8 at the same time. In some embodiments, after step S10 and before step S12, the preparation method may further include: forming a filter layer 18 on the first substrate 10, wherein the filter layer 18 includes a plurality of filter units.

Based on the above, preferably, there is an adjacent area between two adjacent ones of the plurality of filter units, and the adjacent area may be the gap area G. Further, step S14 is: forming the photoelectric conversion layer 12 on the adjacent regions on the first electrode layer 11 so that the projection of the adjacent region in the vertical direction overlaps the projection of the photoelectric conversion layer 12 in the vertical direction.

Based on the above, preferably, step S14 is: forming the photoelectric conversion layer 12 on the adjacent regions on the first electrode layer 11 and on the plurality of filter units, so that two adjacent filter units among the plurality of filter units are formed. The projections in the vertical direction are respectively partially overlapped with the projections of the photoelectric conversion layer 12 in the vertical direction.

Under the condition that the remaining steps remain unchanged, the embodiments can form the display device 1D as shown in FIG. 4 .

Please refer to Figure 5 and Figure 8 at the same time. In some embodiments, after step S10 and before step S12, the preparation method may further include: forming a filter layer 18 on the first substrate 10, wherein the filter layer 18 includes a plurality of filter units. Further, after step S16 and before step S18 , the preparation method may further include: forming a protective layer 17 on the photoelectric conversion layer 12 and/or the second electrode layer 13 . Under the condition that the remaining steps remain unchanged, the embodiments can form the display device 1E as shown in FIG. 5 .

Please refer to Figure 6 and Figure 8 at the same time. In some embodiments, after step S10 and before step S12, the preparation method may further include: forming a filter layer 18 on the first substrate 10, wherein the filter layer 18 includes a plurality of filter units. Further, step S14 may be: forming the photoelectric conversion layer 12 on the periphery of the first electrode layer 11 . Under the condition that the remaining steps remain unchanged, these embodiments can form a display device 1F as shown in FIG. 6 .

Please refer to Figure 7 and Figure 8 at the same time. In some embodiments, after step S10 and before step S12, the preparation method may further include: forming a filter layer 18 on the first substrate 10, wherein the filter layer 18 includes a plurality of filter units. Further, step S14 may be: forming the photoelectric conversion layer 12 on the periphery of the first electrode layer 11 . Furthermore, after step S16 and before step S18 , the preparation method may further include: forming a protective layer 17 on the photoelectric conversion layer 12 and/or the second electrode layer 13 . Under the condition that the remaining steps remain unchanged, the embodiments can form the display device 1G as shown in FIG. 7 .

To sum up, the photoelectric conversion layer, the first electrode layer and the second electrode layer in the display device form a photoelectric conversion structure, and the liquid crystal layer, the first electrode layer and the third electrode layer form a display structure, which makes the display of the present application The device has both a photoelectric conversion function and a display function. Further, since the photoelectric conversion structure and the display structure share the first electrode layer, the thickness of the display device can also be effectively reduced, and the manufacturing process can be simplified. Based on the above configuration, the present application realizes a display device with a low thickness, a simple manufacturing process, and a photoelectric conversion function and a manufacturing method thereof.

However, the above descriptions are only examples of the present application, and are not intended to limit the scope of implementation of the present application. For example, all equivalent changes and modifications made according to the shape, structure, characteristics and spirit described in the scope of the patent application of the present application, All should be included in the scope of the patent application of this application.

1A: Display device 1B: Display device 1C: Display device 1D: Display device 1E: Display device 1F: Display unit 1G: Display device 10: The first substrate 100: The first polarizing layer 101: The first base layer 11: The first electrode layer 12: Photoelectric conversion layer 13: Second electrode layer 14: Liquid crystal layer 15: The third electrode layer 16: Second substrate 160: Drive circuit 161: Second base layer 162: Second polarizing layer 17: Protective layer 18: filter layer 180a: the first filter unit 180b: The second filter unit 180c: The third filter unit G: Gap area L1: length L2: length T1: Thickness T2: Thickness T3: Thickness S10: Steps S12: Steps S14: Steps S16: Steps S18: Steps S20: Steps S22: Step S24: Step

FIG. 1 is a schematic diagram of a display device according to a first embodiment of the application; 2 is a schematic diagram of a display device according to a second embodiment of the present application; 3 is a schematic diagram of a display device according to a third embodiment of the present application; 4 is a schematic diagram of a display device according to a fourth embodiment of the present application; FIG. 5 is a schematic diagram of a display device according to a fifth embodiment of the present application; 6 is a schematic diagram of a display device according to a sixth embodiment of the present application; FIG. 7 is a schematic diagram of a display device according to a seventh embodiment of the present application; and FIG. 8 is a flowchart of a method for fabricating a display device according to some embodiments of the present application.

1D: Display device

10: The first substrate

100: The first polarizing layer

101: The first base layer

11: The first electrode layer

12: Photoelectric conversion layer

13: Second electrode layer

14: Liquid crystal layer

15: The third electrode layer

16: Second substrate

160: Drive circuit

161: Second base layer

162: Second polarizing layer

18: filter layer

180a: the first filter unit

180b: The second filter unit

180c: The third filter unit

G: Gap area

Claims (11)

A display device comprising: a first substrate; a first electrode layer disposed on the first substrate; a photoelectric conversion layer disposed on the first electrode layer and partially covering the first electrode layer; a second electrode layer disposed on the photoelectric conversion layer; a liquid crystal layer disposed on the first electrode layer and the second electrode layer; a third electrode layer disposed on the liquid crystal layer; and a second substrate disposed on the third electrode layer; The first electrode layer, the photoelectric conversion layer and the second electrode layer form a current path, and the first electrode layer and the third electrode layer form an electric field to control the liquid crystal layer. The display device of claim 1, wherein the first substrate comprises: a first polarizing layer; and A first base layer is disposed between the first polarizing layer and the first electrode layer. The display device of claim 1, further comprising a filter layer disposed between the first substrate and the first electrode layer, wherein the filter layer includes a plurality of filter units. The display device according to claim 3, wherein there is an adjacent area between two adjacent ones of the plurality of filter units, and the projection of the adjacent area in the vertical direction and the photoelectric conversion layer in the vertical direction projections overlap. The display device according to claim 4, wherein the adjacent area can be an overlapping area or a gap area of two adjacent filter units in the plurality of filter units. The display device according to claim 4, wherein the projections of two adjacent ones of the plurality of filter units in the vertical direction respectively overlap with the projections of the photoelectric conversion layer in the vertical direction. The display device according to claim 1, wherein the photoelectric conversion layer and the second electrode layer are disposed on the periphery of the first electrode layer. The display device according to claim 1, further comprising a protective layer disposed between the photoelectric conversion layer and the liquid crystal layer and/or between the second electrode layer and the liquid crystal layer. The display device according to claim 1, wherein the thickness of the first electrode layer in the vertical direction is between 0.01 and 1 μm, the thickness of the photoelectric conversion layer in the vertical direction is between 0.05 and 5 μm, and The thickness of the second electrode layer in the vertical direction is between 0.05 and 5 μm. The display device according to claim 1, wherein the length and/or the width of the photoelectric conversion layer in the horizontal direction is between 0.5 and 50 μm, and the length and/or the length of the second electrode layer in the horizontal direction and/or The width is between 0.5~50μm. The display device of claim 1, wherein the second substrate comprises: a driving circuit, disposed on the third electrode layer; a second base layer disposed on the driving circuit; and A second polarizing layer is disposed on the second base layer.

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