TWM625098U - Chip packaging structure with shielding layer - Google Patents

Abstract

A chip package structure with electromagnetic shielding, comprising: a substrate, a window with through the upper surface and the lower surface of the substrate, a plurality of conductive structures in the substrate, and the active surface of each plurality of chip package structures are arranged on the upper surface corresponding to the window, a conductive wire is electrically connected to the each chip package structures with the lower surface of the substrate through the window, the insulating layer is arranged on the back surface of each chip package structure and sidewall of each chip package structure, and is covered part of the upper surface of the substrate. The shielding layer is arranged on the insulating layer and on the upper surface of the substrate which is extended to electrically connect to the portion of conductive structure exposed to the upper surface of the substrate. An encapsulation layer is covered the shielding layer and the upper surface of the substrate and covers the window and part of the lower surface of the substrate. A plurality of electrical connection elements is arranged on the lower surface of the substrate and is electrically connected to the conductive structure which is exposed to the lower surface of the substrate, so the chip package structure with shielding layer can achieve the function of grounding and electromagnetic shielding.

Description

Chip package structure with shielding layer

The present invention relates to a chip package structure, especially a chip package structure with electromagnetic shielding.

The anti-electromagnetic wave design method for reducing electromagnetic interference (EMI) in the prior art is mainly to cover the active and passive components with plastic materials by means of compression molding after the active and passive components are placed on the upper plate, and then use metal sputtering or By adding a metal cover, the single body is covered and connected to the ground wire to achieve EMI protection. These technologies will increase the thickness and volume of the finished product. For existing 3C products, and even wearable devices, the volume requirements are very high, which does not meet the trend and demand of being light, thin, and short.

Please refer to FIG. 1 . FIG. 1 shows the prior art, the Republic of China Invention Patent Publication No. TWI515806, which discloses a wafer-level metal shielding package structure and a manufacturing method. The first conductive structure 14 of the chip unit 12 disposed above the substrate 10 is connected to The circuit wiring of the chip unit 12 can be electrically connected to the substrate 10 through the first conductive structure 14 through the bonding of the first conductive structure 14 . The encapsulant layer 18 covers the backside and all sides of the chip unit 12 . The metal shielding layer 20 covers the top and side surfaces of the encapsulation adhesive layer 18 and extends to the second conductive structure 16 to be electrically connected to the grounding portion 11 on the substrate 10 through the second conductive structure 16 to achieve a metal shielding effect.

Further, in the aforementioned patent case, the metal shielding layer 20 and the second conductive structure 16 between the substrate 10 and the chip unit 12 are electrically connected to the grounding portion 11 on the substrate 10 to achieve the effect of metal shielding. This process increases operational limitations and tedious steps, which not only affects the yield, but also increases the production cost and production cycle; in addition, a plurality of conductive structures 14 and a second conductive structure are additionally disposed on the substrate 10 . The structure 16 and the metal shielding layer 20 are only electrically connected to the grounding portion 11 in the substrate 10 through the second conductive structure 16 and at the same time the first conductive structure 14 and the substrate 10 are electrically connected, which not only cannot effectively achieve the metal shielding effect, but also makes the device The increase in volume affects the process cost and yield of the overall device.

In order to solve the above problems, the main purpose of the present invention is to provide a chip package structure with a shielding layer. The chip package structure covers the shielding layer and is electrically connected to the conductive structure exposed to the substrate, so that the shielding layer can penetrate the conductive structure of the substrate. Grounded, the purpose of electromagnetic shielding can also be achieved by the shielding layer.

According to the above object, the present invention provides a chip package structure with a shielding layer, comprising: a substrate, a plurality of chips, an insulating layer, a shielding layer, a packaging layer and a plurality of electrical connection elements, wherein the substrate has an upper surface and a lower surface, There are windows running through the upper surface and the lower surface of the substrate, and a plurality of conductive structures are arranged in the substrate; a plurality of chips, each chip has an active surface and a back surface, the active surface of each chip is disposed on the upper surface of the substrate, and corresponds to It is arranged on the window; the insulating layer is arranged on the back of each wafer and the side of each wafer; the shielding layer is arranged on the insulating layer and on a part of the upper surface of the substrate, and extends and is exposed to part of the conductive structure on the upper surface of the substrate Electrical connection; encapsulation layer, covering the shielding layer and the upper surface of the substrate, a window and a part of the lower surface of the substrate; and a plurality of electrical connection elements, each of which is arranged on the lower surface of the substrate and is electrically connected to each conductive structure exposed on the lower surface of the substrate.

In a preferred embodiment of the present invention, each chip is electrically connected to the lower surface of the substrate through a wire through a window.

In a preferred embodiment of the present invention, each chip is electrically connected to the upper surface of the substrate through copper pillars or solder balls.

According to the above purpose, the present invention also discloses a chip package structure with electromagnetic shielding, comprising: a substrate, a plurality of chips, an insulating layer, a shielding layer, a packaging layer and a plurality of electrical connection elements, wherein the substrate has an upper surface and a lower surface and There are a plurality of conductive structures in the substrate; a plurality of wafers, each wafer has an active surface and a back surface, and the active surface of each wafer is arranged on the upper surface of the substrate; an insulating layer is arranged on the backside of each wafer and on the backside of each wafer the side of the substrate; the shielding layer is arranged on the insulating layer and on a part of the upper surface of the substrate, and is extended and electrically connected to the part of the conductive structure exposed on the upper surface of the substrate; the encapsulation layer covers the shielding layer and the upper surface of the substrate; and a plurality of electrical connection elements, each electrical connection element is disposed on the lower surface of the substrate and is electrically connected with each conductive structure exposed on the lower surface of the substrate.

In a preferred embodiment of the present invention, the active surface of each chip is electrically connected to the upper surface of the substrate through copper pillars or solder balls.

In a preferred embodiment of the present invention, the step of forming an insulating layer to cover the backside of the plurality of chips and the side edges of each chip includes: disposing a first steel plate on the substrate having the plurality of chips, wherein the first steel plate has a plurality of a first slot, each first slot corresponds to each wafer, so that the backside of each wafer is exposed by each first slot; a spray coating process is performed, and an insulating material is sprayed on the backside and sides of each wafer to form an insulating layer; and removing the first steel plate, so that the insulating layer covers the backside and the side of each wafer.

In a preferred embodiment of the present invention, the step of forming the shielding layer includes: disposing a second steel plate on each wafer covered with an insulating layer, wherein the second steel plate has a plurality of second slots, and each second slot corresponds to on each wafer, so that the insulating layer on the backside of each wafer is exposed from each of the second slots; performing a spraying process, and spraying the conductive material on the insulating layer on the backside of each wafer and part of the upper surface of the substrate to form a shielding layer; and The second steel plate is removed, so that the shielding layer covers part of the upper surface of the substrate and is electrically connected to part of the conductive structure exposed on the upper surface of the substrate.

3, 4, 5, 6, 7: Chip package structure with shielding layer

30: Substrate

302: Conductive Structure

301: Window

3024: Wire

40: Wafer

402: Copper Pillar

404: Tin Ball

50: The first steel plate

502: first slot

60: Spraying machine table

602: Insulation material

604: Insulation layer

70: Second steel plate

702: Second slot

80: Spraying machine table

802: Conductive Materials

804: Shield

90: encapsulation layer

902: Electrical connection components

FIG. 1 is a cross-sectional view of a wafer-level metal shielded package structure according to the prior art.

FIG. 2a is a schematic diagram illustrating a substrate having a window and a conductive structure according to the technology disclosed in the present invention.

FIG. 2b is a schematic diagram illustrating a plurality of chips disposed on a substrate according to the technology disclosed in the present invention.

FIG. 3 a is a top view showing a first steel plate placed on a substrate with a plurality of wafers according to the technology disclosed in the present invention.

FIG. 3b is a schematic cross-sectional view of forming insulating layers on the backsides and sides of a plurality of wafers by spraying according to the technology disclosed in the present invention.

3c is a schematic cross-sectional view illustrating the formation of insulating layers on the backsides and sides of a plurality of chips according to the technology disclosed in the present invention.

FIG. 4a is a top view showing a second steel plate placed on the structure of FIG. 3c according to the technique disclosed in the present invention.

FIG. 4b is a schematic diagram illustrating the formation of shielding layers on a plurality of wafers with insulating layers by spraying according to the technology disclosed in the present invention.

4c is a schematic cross-sectional view illustrating the formation of shielding layers on a plurality of chips and on the upper surface of a part of the substrate according to the technology disclosed in the present invention.

FIG. 5 is a schematic cross-sectional view illustrating the formation of an encapsulation layer on the structure of FIG. 4c according to the technology disclosed in the present invention.

6 is a schematic cross-sectional view of a chip package structure with a shielding layer obtained by subjecting the structure of FIG. 5 to a dicing process according to the technology disclosed in the present invention.

FIG. 7a is a schematic diagram illustrating another embodiment of a chip package structure with a shielding layer according to the technology disclosed in the present invention.

FIG. 7b is a schematic diagram showing yet another embodiment of a chip package structure with a shielding layer according to the technology disclosed in the present invention.

FIG. 8a is a schematic diagram showing yet another embodiment of a chip package structure with a shielding layer according to the technology disclosed in the present invention.

FIG. 8b is a schematic diagram illustrating a further embodiment of a chip package structure with a shielding layer according to the technology disclosed in the present invention.

First, please refer to Figure 2a. FIG. 2a is a schematic diagram illustrating a substrate 30 having windows and conductive structures 302 according to the techniques disclosed in the present invention. In FIG. 2a, the substrate 30 has upper and lower surfaces, and windows 301 penetrating the upper and lower surfaces, and the substrate 30 also has a plurality of conductive structures 302 penetrating the upper and lower surfaces. Next, please refer to Figure 2b. FIG. 2 b shows a top view of a plurality of wafers disposed on the substrate 30 . In FIG. 2b, a plurality of wafers 40 are first placed with the active surface facing down and aligned with the window 301 of the substrate 30, so that the active surface of the wafer 40 is exposed to the window (the space enclosed by the dotted line in the figure). In the embodiment of the present invention, placing the active surface of the wafer 40 on the substrate 30 and aligning it with the window 301 can be achieved by flip-chip or flip-chip. Next, the active surfaces of the chips 40 exposed to the windows 301 are electrically connected to the lower surface of the substrate 30 by the wires 3024 using the wire bonding technology in the semiconductor manufacturing process.

Next, please refer to Figure 3a. FIG. 3a shows a top view of a first steel plate 50 provided on a substrate 30 having a plurality of wafers. In FIG. 3 a , the first steel plate 50 having a plurality of first slots 502 is placed on the substrate 30 of the plurality of wafers 40 that have just been wire-bonded, wherein the first slots 502 of the first steel plate 50 may correspond to For each wafer 40 on the substrate 30, when the first steel plate 50 with the plurality of first slots 502 is placed on the substrate 30 with the plurality of wafers 40, the backside of each wafer 40 can be formed by the first slots Bit 502 is exposed.

Next, please refer to FIG. 3 b , the substrate 30 with the first steel plate 50 placed thereon and the plurality of wafers 40 is disposed under the spraying machine table 60 to perform the spraying process of the insulating layer. In this process, the sprayer table 60 sprays the insulating material 602 on the backside and the side of the wafer 40 exposed by the first slot 502 of the first steel plate 50 . Next, the first steel plate 50 is removed from the substrate 30 to complete the spraying process, and as shown in FIG. 3c , insulating layers 604 can be formed on the backsides and sides of the plurality of wafers 40 . In the present creation, the insulating material 602 may be a high molecular polymer insulating material.

Next, please refer to FIG. 4 a , which is a top view of placing a second steel plate in a multi-chip package structure with an insulating layer. In FIG. 4a, another second steel plate 70 with a second groove 702 is placed on the substrate 30 of the plurality of wafers 40 with the insulating layer 604, so that the insulating layer 604 on the back of each wafer 40 can be Exposed by the second slot 70 . Next, please refer to FIG. 4b , the above-mentioned substrate 30 of the plurality of wafers 40 having the insulating layer 604 on which the second steel plate 70 has been placed is placed under the spraying machine table 80 to perform the spraying process of the conductive material. In this process, the spraying machine 80 sprays the conductive material 802 on the second groove 702 exposing the second steel plate 70 to cover the surface and sidewall of the insulating layer 604 of each wafer 40, and extends to form The conductive structure 302 is exposed on the upper surface of the substrate 30 to form a shielding layer 804 , wherein the shielding layer 804 is electrically connected to the conductive structure 302 exposed on the upper surface of the substrate 30 . Next, the second steel plate 70 is removed to complete the process of spraying the conductive material, and a structure in which the insulating layer 604 on the backside of the wafer 40 and part of the upper surface of the substrate 30 is covered with a shielding layer 804 can be obtained as shown in FIG. 4c .

Next, please refer to FIG. 5 . FIG. 5 is a schematic cross-sectional view illustrating the formation of an encapsulation layer on the structure of FIG. 4c according to the technology disclosed in the present invention. In FIG. 5 , a molding step is performed on the structure of FIG. 4 c using the packaging process, and the packaging layer 90 is formed on the multiple chip packaging structures 40 and the substrate 30 with the shielding layer 804 , and simultaneously covers the window 301 of the substrate 30 and the cover Part of the lower surface of the substrate 30 . Finally, a ball-mounting step is performed to form a plurality of electrical connection elements 902 on the lower surface of the substrate 30 and at the positions where the conductive structures 302 are exposed to the lower surface of the substrate 30 , so that the electrical connection elements 902 are electrically connected to the conductive structures 302 The electrical connection element 902 may be a solder ball.

Please refer to Figure 6. 6 is a schematic cross-sectional view showing a chip package structure having a shielding layer. After the packaging step is completed, the chip packaging structure after the packaging step is cut through the cutting step to obtain the chip packaging structure 3 having the shielding layer 804 . In another embodiment, according to user requirements, The chip package structure with the shielding layer 804 is diced in a plurality of pieces, whether it is a single or multiple chip package structure with the shielding layer 804, the shielding layer 804 can be used as the electromagnetic shield of the chip 40 to prevent or reduce the Electromagnetic interference from other components or the environment, in addition, since the shielding layer 804 is electrically connected to the first conductive structure 302 exposed on the surface of the substrate 30 , the conductive structure 302 on the substrate 30 can be grounded.

Next, please refer to FIG. 7a and FIG. 7b at the same time. 7a and 7b respectively show schematic diagrams of other embodiments of a chip package structure with a shield layer formed according to the method for forming a chip package structure with a shield layer disclosed in the present invention. In FIGS. 7 a and 7 b , the method of forming the chip package structures 4 and 5 with the shielding layer 804 is similar to the aforementioned chip package structure 3 with the shielding layer 804 , and the same forming steps are not described here. The difference is that copper pillars are formed on the active surface (not shown in the figure) of the wafer 40 402 (FIG. 7a) or solder balls 404 (FIG. 7b) are then disposed on the upper surface of the substrate 30 with the active surface facing down, and the active surface of the wafer 40 corresponds to the window 301 (as shown in FIG. 2), and The chip 40 is electrically connected to the substrate 30 through copper pillars 402 (FIG. 7a) or solder balls 404 (FIG. 7b).

Please also refer to FIG. 8a and FIG. 8b. 8a and 8b respectively show schematic diagrams of other embodiments of the chip package structure with shielding layer formed according to the method for forming the chip package structure with shielding layer disclosed in the present invention. In FIGS. 8 a and 8 b , the difference between the chip package structures 6 , 7 with the shielding layer 804 and the chip package structures 3 , 4 , and 5 with the shielding layer 804 in FIGS. There are no windows 301 (as shown in FIG. 2 ) through the upper and lower surfaces. Similarly, copper pillars 402 ( FIG. 8 a ) or solder balls 404 ( FIG. 8 b ) are first formed on the active surface (not shown in the figure) of the wafer 40 , and then the active surface of the wafer 40 (not shown in the figure) is formed. It is disposed on the upper surface of the substrate 30 facing downward, and the active surface of the chip 40 is electrically connected to the substrate 30 through the copper pillars 402 ( FIG. 8 a ) or the solder balls 404 ( FIG. 8 b ).

The above-mentioned embodiments are only to illustrate the technical ideas and characteristics of this creation, and its purpose is to enable those who are familiar with the art to understand the content of this creation and implement it accordingly. It should not limit the patent scope of this creation. That is, the equivalent changes or modifications made in accordance with the spirit disclosed in this work should still be covered by the patent scope of this work.

3: Chip package structure with shielding layer

30: Substrate

302: Conductive Structure

3024: Wire

40: Wafer

604: Insulation layer

804: Shield

90: encapsulation layer

902: Electrical connection components

Claims (8)

A chip package structure with a shielding layer, comprising: a substrate having an upper surface and a lower surface, a window penetrating the upper surface and the lower surface of the substrate, and a plurality of conductive structures in the substrate; Each of the chips has an active surface and a back surface, the active surface of each of the chips is disposed on the upper surface of the substrate, and is correspondingly disposed on the window; an insulating layer is disposed on the surface of each of the chips. the back surface and one side of each of the chips; a shielding layer disposed on the insulating layer and part of the upper surface of the substrate, and extending and exposing the conductive structures to parts of the upper surface of the substrate electrical connection; an encapsulation layer covering the shielding layer and the upper surface of the substrate, the window and part of the lower surface of the substrate; and a plurality of electrical connection elements, each of which is arranged on the bottom of the substrate on the lower surface and electrically connected with each of the conductive structures exposed on the lower surface of the substrate. The chip package structure with shielding layer as claimed in claim 1, wherein the active surface of each chip is electrically connected to the lower surface of the substrate through a wire through the window. The chip package structure with shielding layer as claimed in claim 1, wherein the active surface of each chip is electrically connected to the upper surface of the substrate through a copper pillar or a solder ball. A chip package structure with a shielding layer, comprising: a substrate with an upper surface and a lower surface and a plurality of conductive structures in the substrate; a plurality of chips, each of the chips has an active surface and a back surface, and each of the The active surface of the chip is disposed on the upper surface of the substrate; an insulating layer is disposed on a back surface of each of the chips and on one side of each of the chips; a shielding layer, disposed on the insulating layer and a part of the upper surface of the substrate, and extending and electrically connected to a part of the conductive structures exposed on the upper surface of the substrate; an encapsulation layer covering the shielding layer and the upper surface of the substrate; and a plurality of electrical connection elements, each of the electrical connection elements is disposed on the lower surface of the substrate and is electrically connected to each of the conductive structures exposed on the lower surface of the substrate. The chip package structure with shielding layer as claimed in claim 4, wherein each of the chips is electrically connected to the upper surface of the substrate through a copper pillar or a solder ball. The chip package structure with shielding layer according to claim 1 or 4, wherein the insulating layer is a high molecular polymer insulating material. The chip package structure with a shielding layer according to claim 1 or 4, wherein the shielding layer is a conductive material. The chip package structure with shielding layer according to claim 7, wherein the conductive material is silver glue.

Images