TWM623034U - Protection element of plasma device - Google Patents
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- TWM623034U TWM623034U TW110212415U TW110212415U TWM623034U TW M623034 U TWM623034 U TW M623034U TW 110212415 U TW110212415 U TW 110212415U TW 110212415 U TW110212415 U TW 110212415U TW M623034 U TWM623034 U TW M623034U
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- 238000001020 plasma etching Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
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Abstract
Description
本創作是有關於一種電漿裝置之保護元件,尤其是應用於電漿裝置中的靜電吸附承盤邊緣的可更換式密封環。This creation is about a protective element of a plasma device, especially a replaceable sealing ring applied to the edge of the electrostatic adsorption plate in the plasma device.
在現今的半導體製程中,為了在半導體上形成電路圖案,往往會對晶圓進行蝕刻製程,而電漿蝕刻為蝕刻製程中相當常見的一種,其以高速的電漿離子氣流沖蝕晶圓以蝕刻晶圓表面,進而形成電路圖案。電漿裝置通常包括電漿腔室及在電漿腔室中用以承載晶圓的靜電吸附承盤(electrostatic chuck,ESC)。於一晶圓蝕刻製程中,靜電吸附承盤係一種利用電來產生靜電力的裝置,靜電吸附承盤使晶圓保持在電漿腔室中的固定位置,可避免對晶圓施以物理性挾持而導致晶圓變形的問題。靜電吸附承盤通常包含一陶瓷介電材料之上部元件、軟質材料構成的連結層以及下部元件,所述上部元件由所述連結層連接至所述下部元件作為電極,電漿裝置另包括位於靜電吸附承盤周緣、作為延伸承載晶圓之延伸元件。由於製程電漿氣體是從上往下進行蝕刻,當進行所述蝕刻製程時,所述製程電漿氣體可能會經由縫隙、溝槽等侵蝕該連結層或其附近的元件表面,當所產生之副產物進入電漿腔室中則會污染電漿腔室。另外,該電漿氣體亦可能使該靜電吸附承盤遭受損壞,此類損壞通常包含發生(微)放電(Micro-Arcing)、漏電、電極損壞、電壓異常及漏氣(例如氦氣)等狀況,當前述狀況發生時,往往需更換整組靜電吸附承盤,如此一來,不僅會影響蝕刻製程良率和產能損失,更造成龐大之成本損耗。In the current semiconductor manufacturing process, in order to form circuit patterns on the semiconductor, the wafer is often etched, and plasma etching is a fairly common etching process. The surface of the wafer is etched to form circuit patterns. Plasma devices generally include a plasma chamber and an electrostatic chuck (ESC) for carrying wafers in the plasma chamber. In a wafer etching process, the electrostatic adsorption plate is a device that uses electricity to generate electrostatic force. The electrostatic adsorption plate keeps the wafer in a fixed position in the plasma chamber, which can avoid physical properties of the wafer. The problem of wafer deformation caused by clamping. The electrostatic adsorption plate usually includes an upper element of a ceramic dielectric material, a connecting layer composed of a soft material, and a lower element. The upper element is connected by the connecting layer to the lower element as an electrode. The plasma device further includes an electrostatic The peripheral edge of the suction plate is used as an extension element for extending and carrying the wafer. Since the process plasma gas is etched from top to bottom, when the etching process is performed, the process plasma gas may erode the connection layer or the surface of the components near it through gaps, trenches, etc. By-products entering the plasma chamber contaminate the plasma chamber. In addition, the plasma gas may also damage the electrostatic adsorption plate, such damage usually includes (Micro-Arcing), leakage, electrode damage, abnormal voltage and gas leakage (such as helium) and other conditions , When the aforementioned situation occurs, it is often necessary to replace the entire set of electrostatic adsorption pads, which will not only affect the yield of the etching process and the loss of production capacity, but also cause huge cost losses.
為了解決前述問題,現有技術通常於溝槽中填入環氧樹脂、矽膠等永久性填充物;然而,由於前述的永久性填充物仍會被電漿氣體蝕刻而耗損;在長期使用後,前述的永久性填充物不僅會失去對溝槽的保護性,甚至經蝕刻而產生的碎屑還會污染製程。再者,所述永久性填充物的有效期間難以估計,受到侵蝕後又不易移除,導致業者無法定期補強或更換,對整體晶圓製程良率造成負面影響。In order to solve the aforementioned problems, the prior art usually fills the trenches with permanent fillers such as epoxy resin and silicon glue; however, the aforementioned permanent fillers will still be etched and worn by plasma gas; after long-term use, the aforementioned permanent fillers Not only does the permanent filler lose its protection to the trenches, but even debris from etching can contaminate the process. Furthermore, the effective period of the permanent filler is difficult to estimate, and it is difficult to remove after being corroded, so that the industry cannot regularly reinforce or replace it, which has a negative impact on the overall wafer process yield.
有鑑於現有技術的缺點以及不足,本創作的目的係提供一便於定期更換的保護元件,讓工程人員在所述保護元件破損、產生漏氣前能及時更換,使包含其的電漿裝置在進行電漿蝕刻製程時能更加穩定、安全。In view of the shortcomings and deficiencies of the prior art, the purpose of this creation is to provide a protective element that is easy to replace regularly, so that engineers can replace the protective element in time before the protective element is damaged and air leaks occur, so that the plasma device containing it can be replaced in time. The plasma etching process can be more stable and safe.
為達到上述之創作目的,本創作所採用之技術手段為提供一種電漿裝置之保護元件,其設置於一電漿裝置中;其中,該電漿裝置包括有一靜電吸附承盤和可更換的該保護元件。該靜電吸附承盤包括一上部元件、一下部元件以及一連結層,該連結層連接該上部元件與該下部元件,並且於該連結層的一側緣和該上部元件的一部分下緣及該下部元件的一部分上緣共同形成一溝槽。該保護元件具有一環形結構,其設置於該靜電吸附承盤的該溝槽中;該保護元件包括:一主密封部,該主密封部朝向該溝槽的一側具有一第一邊角,該第一邊角為一倒角(chamfer);該主密封部具有一徑向最大寬度和一軸向厚度,該軸向厚度係大於該溝槽的垂直高度,以及該徑向最大寬度與該軸向厚度的比例介於1:0.5至1:10。於本創作中,所述軸向厚度是指該主密封部於該徑向最大寬度的中心點的垂直厚度。In order to achieve the above-mentioned purpose of creation, the technical means used in this creation is to provide a protection element for a plasma device, which is arranged in a plasma device; wherein, the plasma device includes an electrostatic adsorption support plate and the replaceable protection components. The electrostatic adsorption holding plate includes an upper element, a lower element and a connecting layer, the connecting layer connects the upper element and the lower element, and a side edge of the connecting layer and a part of the lower edge of the upper element and the lower part A part of the upper edge of the element together forms a groove. The protection element has an annular structure, which is arranged in the groove of the electrostatic adsorption support plate; the protection element includes: a main sealing part, the side of the main sealing part facing the groove has a first corner, The first corner is a chamfer; the main sealing portion has a radial maximum width and an axial thickness, the axial thickness is greater than the vertical height of the groove, and the radial maximum width and the The ratio of axial thickness is from 1:0.5 to 1:10. In the present invention, the axial thickness refers to the vertical thickness of the main sealing portion at the center point of the radial maximum width.
本創作藉由限定主密封部於軸向(以保護元件的中心點定義,亦即垂直方向)上的厚度大於該溝槽的垂直高度,使得所述主密封部可與該溝槽緊密地貼合,以達到密封之效果。同時,本創作將主密封部朝向該溝槽的一側的至少一邊角(即第一邊角)設計成倒角,有助於安裝該保護元件時能順利插嵌於溝槽中。此外,本創作考量保護元件安裝於溝槽中的密封性,藉由限定該保護元件的徑向最大寬度與該軸向厚度的比例範圍,可提高該保護元件填入溝槽後與溝槽的密合度,且更可適用於各種不同尺寸的溝槽。據此,本創作的電漿裝置之保護元件能使電漿蝕刻製程更加穩定、安全,進而提升包含晶圓之最終產品的產品良率。In the present invention, the thickness of the main sealing part in the axial direction (defined by the center point of the protection element, that is, the vertical direction) is greater than the vertical height of the groove, so that the main sealing part can closely adhere to the groove together to achieve the effect of sealing. At the same time, in the present invention, at least one corner (ie, the first corner) of the side of the main sealing portion facing the groove is designed to be chamfered, which is helpful for the protection element to be smoothly inserted into the groove when installing. In addition, the present invention considers the tightness of the protective element installed in the groove, and by limiting the ratio of the maximum radial width of the protective element to the axial thickness, the sealing performance between the protective element and the groove can be improved after the protective element is filled into the groove. tightness, and more suitable for grooves of various sizes. Accordingly, the protection element of the plasma device of the present invention can make the plasma etching process more stable and safe, thereby improving the product yield of the final product including the wafer.
於本創作中,該主密封部朝向該溝槽的一側更具有一第二邊角,該第二邊角可為一直角、一圓角或一倒角,但不限於此。較佳的,該第二邊角為一倒角。當該主密封部朝向該溝槽的一側所具有的兩邊角(即第一邊角和第二邊角)皆為倒角時,可使該保護元件更順利地插嵌該溝槽中。In the present invention, the side of the main sealing portion facing the groove further has a second corner, and the second corner may be a right corner, a rounded corner or a chamfered corner, but not limited thereto. Preferably, the second corner is a chamfered corner. When the two corners (ie, the first corner and the second corner) of the side of the main sealing portion facing the groove are both chamfered, the protection element can be inserted into the groove more smoothly.
在一些實施態樣中,該主密封部的斷面呈一梯形,所述梯形具有相互平行的一上底邊和一下底邊,以及連接該上底邊和該下底邊的相對兩腰線。其中,該上底邊係該主密封部朝向該溝槽的一側(內側)所形成,而該下底邊則是由該主密封部的朝向遠離溝槽方向的一側(外側)所形成。在一些實施例中,該上底邊的長度大於該下底邊的長度,該上底邊的長度係大於該溝槽的垂直高度,該下底邊的長度係大於或等於該溝槽的垂直高度;較佳的,該上底邊的長度和該下底邊的長度的比例為1:0.85至1:0.95。或者,在另一些實施例中,該上底邊的長度小於該下底邊的長度,該上底邊的長度係大於或等於該溝槽的垂直高度,該下底邊的長度係大於該溝槽的垂直高度;較佳的,該上底邊的長度和該下底邊的長度的比例為1:1.05至1:1.15。In some embodiments, the cross section of the main sealing portion is a trapezoid, and the trapezoid has an upper bottom edge and a lower bottom edge that are parallel to each other, and two opposite waistlines connecting the upper bottom edge and the lower bottom edge. . Wherein, the upper bottom edge is formed by the side (inside) of the main sealing portion facing the groove, and the lower bottom edge is formed by the side (outside) of the main sealing portion facing away from the groove . In some embodiments, the length of the upper base is greater than the length of the lower base, the length of the upper base is greater than the vertical height of the groove, and the length of the lower base is greater than or equal to the vertical height of the groove Height; preferably, the ratio of the length of the upper base to the length of the lower base is 1:0.85 to 1:0.95. Or, in other embodiments, the length of the upper base is less than the length of the lower base, the length of the upper base is greater than or equal to the vertical height of the groove, and the length of the lower base is greater than the groove. The vertical height of the groove; preferably, the ratio of the length of the upper base to the length of the lower base is 1:1.05 to 1:1.15.
其中,當該主密封部的斷面呈一梯形時,該主密封部的底部可以是在同一垂直高度之水平面上,亦可以是該主密封部的頂部在同一垂直高度之水平面上,還可以是該主密封部的頂部和底部都不在同一垂直高度之水平面上。較佳的,該主密封部的斷面所呈的該梯形係一等腰梯形,但不限於此。Wherein, when the cross section of the main sealing part is a trapezoid, the bottom of the main sealing part can be on the horizontal plane of the same vertical height, or the top of the main sealing part can be on the horizontal plane of the same vertical height, or It is that the top and bottom of the main seal are not on the same vertical level. Preferably, the trapezoid of the cross section of the main sealing portion is an isosceles trapezoid, but not limited to this.
較佳的,該保護元件可更包括至少一凸起於該主密封部表面的外凸部。具體而言,該保護元件可更包括於軸向上凸出該主密封部的第一外凸部,該第一外凸部與該主密封部的上側相連。在另一些實施例中,該保護元件可更包括於軸向下凸出該主密封部的第二外凸部,該第二外凸部與該主密封部的下側相連。在另一些實施例中,該保護元件可同時具有該第一外凸部和該第二外凸部,此時,該第二外凸部與該第一外凸部位於相對側。Preferably, the protection element may further include at least one convex portion protruding from the surface of the main sealing portion. Specifically, the protection element may further include a first outer convex portion protruding from the main sealing portion in the axial direction, and the first outer convex portion is connected with the upper side of the main sealing portion. In other embodiments, the protection element may further include a second outer convex portion protruding downward from the main sealing portion in the axial direction, and the second outer convex portion is connected to the lower side of the main sealing portion. In other embodiments, the protection element may have the first convex portion and the second convex portion at the same time, and in this case, the second convex portion and the first convex portion are located on opposite sides.
較佳的,所述第一外凸部和第二外凸部可獨立為單波峰型式或多重波峰型式,但不限於此。由於該主密封部的軸向厚度已大於該溝槽的垂直高度,因此,當該保護元件具有第一外凸部和/或第二外凸部時,該保護元件於垂直方向上的高度將會更加大於該溝槽的高度,雖然會加大該保護元件插嵌於該溝槽時與上部元件和/或下部元件的壁面的摩擦阻力,但由於波峰型態的外凸部的頂峰面積不大,故仍可順利安裝,且基於尖點密封原理,該保護元件於安裝後能更加緊密地與上部元件和/或下部元件的壁面相接,因此可使該保護元件提供更佳的防護效果。Preferably, the first outer convex portion and the second outer convex portion can be independently of a single wave crest type or a multiple wave crest type, but not limited thereto. Since the axial thickness of the main sealing portion is already greater than the vertical height of the groove, when the protective element has the first convex portion and/or the second convex portion, the height of the protective element in the vertical direction will be It will be larger than the height of the groove, although it will increase the frictional resistance between the protective element and the wall surface of the upper element and/or the lower element when the protective element is inserted into the groove, but the peak area of the convex part of the wave crest shape is not enough. Large, so it can still be installed smoothly, and based on the cusp sealing principle, the protective element can be more closely connected with the wall surface of the upper element and/or the lower element after installation, so the protective element can provide better protection effect .
於本創作中,該電漿裝置更包括一延伸元件,該延伸元件環繞該靜電吸附承盤的該上部元件和該下部元件,且該延伸元件的內側與該下部元件的外側維持一間距。在一些實施態樣中,該保護元件可更包括一延伸部,該延伸部係由該主密封部朝向遠離該溝槽方向的一側(即面對該延伸元件的一側)凸出成型且位於所述間距中;該延伸部於徑向方向上的最大長度小於或等於所述間距的長度。該延伸部可使該保護元件於徑向方向上的總長度必然大於該溝槽於徑向方向的長度,因此,該延伸部能提供該保護元件更好的定位效果,且當技術人員需更換電漿裝置中的保護元件時,還能使該保護元件易於移除。In the present invention, the plasma device further includes an extension element, the extension element surrounds the upper element and the lower element of the electrostatic adsorption tray, and the inner side of the extension element and the outer side of the lower element maintain a distance. In some embodiments, the protection element may further include an extension part, the extension part is protruded from the main sealing part toward the side away from the groove direction (ie the side facing the extension element) and in the space; the extension has a maximum length in the radial direction that is less than or equal to the length of the space. The extension portion can make the total length of the protection element in the radial direction necessarily greater than the length of the groove in the radial direction. Therefore, the extension portion can provide better positioning effect of the protection element, and when the technician needs to replace it When used as a protective element in a plasma device, the protective element can also be easily removed.
當該延伸部於徑向方向上的最大長度等於所述間距的長度時,該延伸部與該靜電吸附承盤的延伸元件的內側相接觸。由於該延伸部位於所述間距中,還部分填滿該靜電吸附承盤與延伸元件間的縫隙延伸該保護元件的保護範圍,使該保護元件更能夠限定延伸元件於製程中之漂移,使延伸元件與靜電吸附承盤之間的間距維持一致,進一步避免電漿氣體經由因延伸元件之漂移產生之大縫隙的一側進入溝槽中對連結層造成損害。When the maximum length of the extension portion in the radial direction is equal to the length of the spacing, the extension portion is in contact with the inner side of the extension element of the electrostatic adsorption holding plate. Since the extension part is located in the space, it also partially fills the gap between the electrostatic adsorption plate and the extension element to extend the protection range of the protection element, so that the protection element can better limit the drift of the extension element in the process, so that the extension The distance between the element and the electrostatic adsorption pad is kept the same, which further prevents the plasma gas from entering the trench through the side of the large gap caused by the drift of the extending element and causing damage to the connection layer.
在一些實施態樣中,該延伸部可由該主密封部的上側和下側往中間延伸形成;在另一些實施態樣中,該延伸部可由該主密封部的上側和下側之間向外凸出形成,但不限於此。在一些實施態樣中,該延伸部沿該主密封部軸向的截面形狀可為三角形、圓弧形、波浪狀(即由多個圓弧形所組成)或鋸齒狀(即由多個三角形所組成),但不限於此。In some embodiments, the extension portion may be formed by extending from the upper side and the lower side of the main sealing portion toward the middle; in other embodiments, the extension portion may be formed by extending outward from the upper side and the lower side of the main sealing portion. The protrusions are formed, but not limited thereto. In some embodiments, the cross-sectional shape of the extension part along the axial direction of the main sealing part may be triangular, circular arc, wavy (that is, composed of a plurality of circular arcs) or zigzag (that is, composed of a plurality of triangular shapes) consisting of), but not limited thereto.
較佳的,主密封部的徑向最大寬度與該延伸部於徑向方向的最大長度之比例為1:0.05至1:3,但不限於此。Preferably, the ratio of the maximum radial width of the main sealing portion to the maximum length of the extension portion in the radial direction is 1:0.05 to 1:3, but not limited thereto.
於本創作中,該主密封部朝向遠離該溝槽方向的一側可平行或不平行於該保護元件的軸向方向。舉例而言,當該主密封部朝向遠離該溝槽方向的一側平行於該保護元件的軸向方向時,該主密封部的斷面可約呈矩形,但不限於此。當該主密封部朝向遠離該溝槽方向的一側不平行於該保護元件的軸向方向時,其可以是由該主密封部的上側往靠近該延伸元件的方向斜向延伸至與該主密封部的下側相連,亦可以是由該主密封部的上側往靠近該溝槽的方向斜向延伸至與該主密封部的下側相連。另外,該主密封部遠離該溝槽的一側還可以向內(即向溝槽的方向)凹陷,即從該主密封部的斷面來看,該主密封部遠離該溝槽的一側可為一弧線,但不限於此。因此,該主密封部的徑向最小寬度則會小於該溝槽於徑向方向的長度。In the present invention, the side of the main sealing portion facing away from the groove may be parallel or non-parallel to the axial direction of the protection element. For example, when the side of the main sealing portion facing away from the groove is parallel to the axial direction of the protection element, the cross-section of the main sealing portion may be approximately rectangular, but not limited thereto. When the side of the main sealing part facing away from the groove is not parallel to the axial direction of the protection element, it may extend obliquely from the upper side of the main sealing part to the direction close to the extension element to the direction close to the main sealing part. The lower side of the sealing part is connected, and it can also extend obliquely from the upper side of the main sealing part to the direction close to the groove to be connected with the lower side of the main sealing part. In addition, the side of the main sealing portion away from the groove can also be recessed inward (that is, in the direction of the groove), that is, from the cross-section of the main sealing portion, the side of the main sealing portion away from the groove It can be an arc, but not limited to this. Therefore, the radial minimum width of the main seal portion is smaller than the radial length of the groove.
為了與溝槽的尺寸搭配以提升該保護元件與溝槽的密合度,該主密封部的該徑向最大寬度與該軸向厚度的比例可視需求調整;舉例而言,當溝槽的截面接近方形時,較佳的,該主密封部的該徑向最大寬度與該軸向厚度的比例為0.8:1至1:2;或者,當溝槽的截面接近細長矩形時,較佳的,該主密封部的該徑向最大寬度與該軸向厚度的比例為1:2.5至1:7.5。In order to match the size of the groove to improve the tightness between the protection element and the groove, the ratio of the maximum radial width to the axial thickness of the main sealing portion can be adjusted according to the needs; for example, when the cross section of the groove is close to When the shape is square, preferably, the ratio of the radial maximum width to the axial thickness of the main sealing portion is 0.8:1 to 1:2; or, when the cross section of the groove is close to an elongated rectangle, preferably, the The ratio of the radial maximum width to the axial thickness of the primary seal is 1:2.5 to 1:7.5.
較佳的,該主密封部的徑向最大寬度與該溝槽於徑向方向的長度之比例為1:1.05至1:1.2,但不限於此。Preferably, the ratio of the maximum radial width of the main sealing portion to the length of the groove in the radial direction is 1:1.05 to 1:1.2, but not limited thereto.
較佳的,該主密封部的軸向厚度與溝槽的垂直高度之比例為1.02:1至1.15:1,但不限於此。Preferably, the ratio of the axial thickness of the main sealing portion to the vertical height of the groove is 1.02:1 to 1.15:1, but not limited thereto.
依據本創作,該保護元件的全部構件可皆一體成型,或者部分構件彼此一體成型後再與其他部分構件接合。較佳的,所述保護元件由該主密封部、該第一外凸部和該第二外凸部所構成,且該主密封部、該第一外凸部和該第二外凸部呈一體成型,此態樣屬於全部構件皆一體成型。或者,所述保護元件由該主密封部和該延伸部所構成,且該主密封部和該延伸部呈一體成型。According to the present invention, all the components of the protection element may be integrally formed, or some components may be integrally formed with each other and then joined with other partial components. Preferably, the protection element is composed of the main sealing part, the first convex part and the second convex part, and the main sealing part, the first convex part and the second convex part are in the shape of the main sealing part, the first convex part and the second convex part. One-piece molding, this state belongs to all the components are one-piece molding. Alternatively, the protection element is composed of the main sealing part and the extension part, and the main sealing part and the extension part are integrally formed.
較佳的,所述保護元件的材質包括氟化橡膠(Fluoro-elastomer,FKM)、全氟化橡膠(Perfluoro-elastomer,FFKM)或氟矽橡膠(Fluorosilicone Rubber,FVMQ)等材質,但不限於此。Preferably, the material of the protection element includes Fluoro-elastomer (FKM), Perfluoro-elastomer (FFKM) or Fluorosilicone Rubber (FVMQ), etc., but not limited thereto .
依據本創作,所述上部元件的材質通常包括陶瓷介電材料,但不限於此。另外,所述上部元件的內部可設有一電極,所述電極的材質通常為銅或鎢等金屬,但不限於此。According to the present invention, the material of the upper element generally includes a ceramic dielectric material, but is not limited thereto. In addition, an electrode may be provided inside the upper element, and the material of the electrode is usually copper or tungsten, but not limited thereto.
依據本創作,所述下部元件的內部除了設置有流體供應單元,還可設置一控溫系統以穩定靜電吸附承盤的溫度,進而避免靜電吸附承盤的溫度變化影響晶圓的蝕刻速率。另外,所述流體供應單元所供應的工作流體,通常為氦氣,但不限於此;所述工作流體可轉移晶圓的熱能,進而調節晶圓的溫度並控制蝕刻速率。According to the present invention, in addition to a fluid supply unit, a temperature control system can be arranged inside the lower element to stabilize the temperature of the electrostatic adsorption carrier, thereby preventing the temperature change of the electrostatic adsorption carrier from affecting the etching rate of the wafer. In addition, the working fluid supplied by the fluid supply unit is usually helium gas, but not limited thereto; the working fluid can transfer the thermal energy of the wafer, thereby adjusting the temperature of the wafer and controlling the etching rate.
以下請配合圖式及本創作之示例實施例,進一步闡述本創作為達成預定目的所採取的技術手段。In the following, please refer to the drawings and the exemplary embodiments of the present creation to further describe the technical means adopted by the present creation to achieve the predetermined purpose.
本創作之電漿裝置之保護元件可應用設置於如圖1A和圖1B所示之現有技術中的電漿裝置1中。該電漿裝置1包括有一靜電吸附承盤10。該靜電吸附承盤10包括有一上部元件11、一下部元件12、一連結層13和一流體供應單元14。其中,該連結層13連接該上部元件11與該下部元件12,並且於該連結層13的一側緣131和部分的上部元件下緣111及部分的下部元件上緣121共同形成一溝槽15,且溝槽15位於上部元件11和下部元件12之間。該上部元件11可用於承載一晶圓W,該流體供應單元14設於該下部元件12之內部,並經過該上部元件11對該晶圓W提供工作流體141(例如氦氣)。另外,該電漿裝置1還包括一延伸元件20,該延伸元件20環繞靜電吸附承盤10的上部元件11和下部元件12,且該延伸元件20的內側與下部元件12的外側維持一間距R,所述間距R即形成一環狀的縫隙,所述縫隙與該延伸元件20中的通道(圖未示)相連,而可通至延伸元件20之外圍。製程電漿氣體120由上往下進行蝕刻,當進行一電漿蝕刻製程時,所述製程電漿氣體120可能會經由所述縫隙、溝槽15侵蝕該連結層13或其附近的元件表面,因此,電漿裝置1需將具有環形結構的保護元件設置於該靜電吸附承盤10的環狀的溝槽15中,以提升電漿蝕刻製程的穩定性和安全性。The protection element of the plasma device of the present invention can be applied to the
第一實施例first embodiment
請參考圖2、圖3A和圖3B,圖2即為本創作的第一實施例之保護元件30A之俯視示意圖,由圖2可以知道,保護元件30A具有一環形結構。而圖3A中的保護元件30A為依據圖2中的「B-B斷面線」所示的斷面結構,且是保護元件30A未塞入靜電吸附承盤之溝槽15中的示意圖,圖3B則是保護元件30A完全塞入於靜電吸附承盤之溝槽15中的示意圖。Please refer to FIG. 2 , FIG. 3A and FIG. 3B . FIG. 2 is a schematic top view of the
保護元件30A包括一主密封部31,且該主密封部31朝向溝槽15的一側具有一第一邊角311和一第二邊角312,該第一邊角311和該第二邊角312皆為倒角。另外,該主密封部31朝向遠離溝槽15方向的一側平行於該保護元件30A的軸向方向,因此,該主密封部31的斷面約呈一矩形。The
以所述保護元件30A的中心點定義,於所述保護元件30A的徑向方向上,該主密封部31具有一徑向最大寬度L
1;以及,於保護元件30A的軸向方向上,該主密封部31具有一軸向厚度H
1,所述軸向厚度H
1是指該主密封部31於該徑向最大寬度L
1的中心點(正中間)的垂直厚度。其中,該軸向厚度H
1大於溝槽15的垂直高度H
g,該主密封部31的徑向最大寬度L
1與軸向厚度H
1的比例為1:1.25。另外,主密封部31的徑向最大寬度L
1與溝槽15於徑向方向的長度L
g的比例為1:1.05。
Defined by the center point of the
第二實施例Second Embodiment
請參考圖4,圖4為本創作的第二實施例之保護元件30B完全塞入圖1B中的靜電吸附承盤之溝槽15中的示意圖。第二實施例之保護元件30B可包含與第一實施例之保護元件30A相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第二實施例之保護元件30B與第一實施例之保護元件30A主要不同之處在於:(1)保護元件30B的主密封部31朝向溝槽15的一側所具有的第一邊角311和第二邊角312之中,僅該第一邊角311為倒角,而第二邊角312為直角;其中,第一邊角311即為保護元件30B朝向溝槽15的一側與保護元件30B的下側相接的接角;以及,(2)未塞入靜電吸附承盤之溝槽15時,該主密封部31的徑向最大寬度與軸向厚度的比例為1:4.5。Please refer to FIG. 4 . FIG. 4 is a schematic diagram illustrating that the
第三實施例Third Embodiment
請參考圖5A和圖5B,圖5A係第三實施例之保護元件30C未塞入溝槽15的斷面示意圖,而圖5B係第三實施例之保護元件30C完全塞入溝槽15的斷面示意圖。Please refer to FIGS. 5A and 5B . FIG. 5A is a schematic cross-sectional view of the
第三實施例之保護元件30C可包含與第二實施例之保護元件30B相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第三實施例之保護元件30C與第二實施例之保護元件30B主要不同之處在於:主密封部31的上側和下側分別由上、下兩斜面所形成,即所述上側和下側不平行。也就是說,該主密封部31的斷面約呈一梯形,所述梯形具有相互平行的上底邊(即該主密封部31朝向溝槽15方向的內側所形成)和下底邊(即該主密封部31朝向遠離溝槽15方向的外側所形成),以及連接所述上、下底邊的相對兩腰線。其中,上底邊的長度H
2大於下底邊的長度H
3,且上底邊的長度H
2大於溝槽15的垂直高度H
g,下底邊的長度H
3等於溝槽15的垂直高度H
g,此外,上底邊的長度H
2和下底邊的長度H
3的比例為1.12:1。
The
第四實施例Fourth Embodiment
請參考圖6,圖6為本創作的第四實施例之保護元件30D未塞入圖1B中的靜電吸附承盤之溝槽15中的示意圖。第四實施例之保護元件30D可包含與第三實施例之保護元件30C相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第四實施例之保護元件30D與第三實施例之保護元件30C主要不同之處在於:於該主密封部31的梯形斷面中,所述梯形所具有的相互平行的上底邊和下底邊的相對長度關係不同。於第四實施例之保護元件30D中,上底邊的長度H
2小於下底邊的長度H
3,同時,上底邊的長度H
2略大於溝槽15的垂直高度H
g,因此,下底邊的長度H
3必然也大於溝槽15的垂直高度H
g,此外,上底邊的長度H
2和下底邊的長度H
3的比例為1:1.1。
Please refer to FIG. 6 . FIG. 6 is a schematic diagram of the
第五實施例Fifth Embodiment
請參考圖7A和圖7B,圖7A係第五實施例之保護元件30E未塞入溝槽15的斷面示意圖,而圖7B係第五實施例之保護元件30E完全塞入溝槽15的斷面示意圖。Please refer to FIGS. 7A and 7B , FIG. 7A is a schematic cross-sectional view of the
第五實施例之保護元件30E包括:一主密封部31、一第一外凸部32以及一第二外凸部33,主密封部31、第一外凸部32以及第二外凸部33係呈一體成型。該主密封部31朝向遠離溝槽15方向的一側平行於該保護元件30E的軸向方向,因此,該主密封部31的斷面約呈一矩形;而主密封部31朝向溝槽15的一側所具有的第一邊角311和第二邊角312之中,僅該第一邊角311為倒角,而第二邊角312為直角。該第一外凸部32與該主密封部31的上側相連,該第二外凸部33與該主密封部31的下側相連,且該第一外凸部32與該第二外凸部33位於該主密封部31之相對側。其中,該第一外凸部32與該第二外凸部33皆為單波峰型式。The
此外,該主密封部31的徑向最大寬度L
1與溝槽15於徑向方向的長度L
g的比例約為1:1.05,以及,該主密封部31的軸向厚度H
1大於溝槽15的垂直高度H
g,所述軸向厚度H
1是指該主密封部31於該徑向最大寬度L
1的中心點(正中間)的垂直厚度。並且,該主密封部31的徑向最大寬度L
1與軸向厚度H
1的比例為1:5。
In addition, the ratio of the maximum radial width L 1 of the
第六實施例Sixth Embodiment
請參考圖8A和圖8B,圖8A係第六實施例之保護元件30F未塞入溝槽15的斷面示意圖,而圖8B係第六實施例之保護元件30F完全塞入溝槽15的斷面示意圖。Please refer to FIGS. 8A and 8B . FIG. 8A is a schematic cross-sectional view of the
第六實施例之保護元件30F可包含與第五實施例之保護元件30E相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第六實施例之保護元件30F與第五實施例之保護元件30E主要不同之處在於:第六實施例之保護元件30F的主密封部31朝向溝槽15的一側所具有的第一邊角311和一第二邊角312皆為倒角。The
第七實施例Seventh Embodiment
請參考圖9,圖9係第七實施例之保護元件30G未塞入溝槽15的斷面示意圖。第七實施例之保護元件30G可包含與第五實施例之保護元件30E相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第七實施例之保護元件30G與第五實施例之保護元件30E主要不同之處在於:(1)保護元件30G的第一外凸部32與第二外凸部33皆為多重波峰型式,更具體來說,第一外凸部32與第二外凸部33的多重波峰型式各具有4個波峰;以及,(2)該主密封部31的徑向最大寬度L
1與軸向厚度H
1的比例為1:6。
Please refer to FIG. 9 . FIG. 9 is a schematic cross-sectional view of the
第八實施例Eighth Embodiment
請參考圖10A和圖10B,圖10A係第八實施例之保護元件30H未塞入溝槽15的斷面示意圖,而圖10B係第八實施例之保護元件30H設置於溝槽15的示意圖。第八實施例之保護元件30H可包含與第二實施例之保護元件30B相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第八實施例之保護元件30H與第二實施例之保護元件30B主要不同之處在於:保護元件30H更包括一延伸部34。Please refer to FIGS. 10A and 10B , FIG. 10A is a schematic cross-sectional view of the
具體而言,第八實施例之保護元件30H包括:主密封部31和延伸部34,該延伸部34係由該主密封部31朝向遠離溝槽15方向的一側(即面對該延伸元件20的一側)、且是從主密封部31的上側和下側之間的位置向外凸出成型且位於所述間距R中,而延伸部34沿主密封部31軸向的截面形狀為一三角形。其中,主密封部31和延伸部34係呈一體成型。該主密封部31朝向遠離溝槽15方向的一側平行於該保護元件30H的軸向方向,因此,該主密封部31的斷面約呈一矩形。Specifically, the
其中,延伸部34於徑向方向上的最大長度L
2小於所述間距R的長度;主密封部31的徑向最大寬度L
1與該延伸部34於徑向方向的最大長度L
2之比例為1:0.1。
The maximum length L 2 of the
由於保護元件30H具有延伸部34,因此該保護元件30H更能夠承受電漿氣體的衝擊與侵蝕,更能有效避免電漿氣體經由所述間距R進入溝槽15中對連結層13造成損害;另外,由於所述延伸部34於徑向方向上的最大長度L
2略小於該間距R之長度,可利於將該保護元件30H安裝於溝槽15中。
Since the
第九實施例Ninth Embodiment
請參考圖11A和圖11B,圖11A係第九實施例之保護元件30I未塞入溝槽15的斷面示意圖,而圖11B係第九實施例之保護元件30I完全塞入溝槽15的斷面示意圖。第九實施例之保護元件30I可包含與第五實施例之保護元件30E相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第九實施例之保護元件30I與第五實施例之保護元件30E主要不同之處在於:(1)保護元件30I的主密封部31朝向遠離溝槽15方向的一側不平行於保護元件30I的軸向方向;以及,(2)該主密封部31的徑向最大寬度L
1與軸向厚度H
1的比例為1:4.3。更具體來說,該主密封部31遠離溝槽15的一側向內(即向溝槽15的方向)凹陷,即從該主密封部31的斷面來看,該主密封部31遠離溝槽15的一側為一內凹弧線。因此,於保護元件30I的徑向方向上,主密封部31的徑向最小寬度L
3小於溝槽15於徑向方向的長度L
g。
Please refer to FIGS. 11A and 11B . FIG. 11A is a schematic cross-sectional view of the protection element 30I of the ninth embodiment that is not inserted into the
雖然本創作以前述數個較佳實施例揭露如上,然其並非用以限定本創作。應該瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作些許之更動、替代與潤飾。Although the present invention is disclosed above with the aforementioned preferred embodiments, it is not intended to limit the present invention. It should be understood that any person with ordinary knowledge in the technical field can make some changes, substitutions and modifications without departing from the spirit and scope of the present creation.
1:電漿裝置
10:靜電吸附承盤
11:上部元件
111:上部元件下緣
12:下部元件
121:下部元件上緣
13:連結層
131:側緣
14:流體供應單元
141:工作流體
15:溝槽
20:延伸元件
120:製程電漿氣體
30A,30B,30C,30D,30E,30F,30G,30H,30I:保護元件
31:主密封部
311:第一邊角
312:第二邊角
32:第一外凸部
33:第二外凸部
34:延伸部
A:放大部分
H
1:軸向厚度
H
2:長度
H
3:長度
H
g:垂直高度
L
1:徑向最大寬度
L
2:最大長度
L
3:徑向最小寬度
L
g:長度
R:間距
W:晶圓
1: Plasma device 10: Electrostatic suction plate 11: Upper element 111: Lower edge of upper element 12: Lower element 121: Upper edge of lower element 13: Connection layer 131: Side edge 14: Fluid supply unit 141: Working fluid 15: Trench 20: Extension element 120:
圖1A係電漿裝置之示意圖; 圖1B係圖1A中的放大部分A之剖面示意圖; 圖2係第一實施例之電漿裝置之保護元件的俯視圖; 圖3A係第一實施例之電漿裝置之保護元件依圖2之B-B斷面線所得的斷面,且未塞入圖1B中的溝槽的示意圖; 圖3B係第一實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖4係圖1B中的溝槽設置有第二實施例之電漿裝置之保護元件的剖面示意圖; 圖5A係第三實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖5B係第三實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖6係第四實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖7A係第五實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖7B係第五實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖8A係第六實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖8B係第六實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖9係第七實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖10A係第八實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖10B係第八實施例之電漿裝置之保護元件設置於溝槽的示意圖; 圖11A係第九實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖11B係第九實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖。 1A is a schematic diagram of a plasma device; FIG. 1B is a schematic cross-sectional view of the enlarged portion A in FIG. 1A; FIG. 2 is a top view of the protection element of the plasma device according to the first embodiment; 3A is a schematic diagram of a cross-section of the protection element of the plasma device according to the first embodiment according to the section line B-B in FIG. 2, and is not inserted into the groove in FIG. 1B; 3B is a schematic cross-sectional view of the protection element of the plasma device according to the first embodiment completely inserted into the groove; FIG. 4 is a schematic cross-sectional view of the groove in FIG. 1B provided with the protection element of the plasma device according to the second embodiment; 5A is a schematic cross-sectional view of the plasma device according to the third embodiment when the protection element is not inserted into the groove; 5B is a schematic cross-sectional view of the protection element of the plasma device according to the third embodiment completely inserted into the groove; FIG. 6 is a schematic cross-sectional view of the fourth embodiment of the plasma device where the protection element is not inserted into the groove; 7A is a schematic cross-sectional view of the plasma device according to the fifth embodiment when the protection element is not inserted into the groove; 7B is a schematic cross-sectional view of the protective element of the plasma device according to the fifth embodiment completely inserted into the groove; 8A is a schematic cross-sectional view of the plasma device according to the sixth embodiment when the protection element is not inserted into the groove; 8B is a schematic cross-sectional view of the protection element of the plasma device according to the sixth embodiment completely inserted into the groove; FIG. 9 is a schematic cross-sectional view of the plasma device of the seventh embodiment when the protection element is not inserted into the groove; FIG. 10A is a schematic cross-sectional view of the plasma device of the eighth embodiment when the protection element is not inserted into the groove; FIG. 10B is a schematic diagram illustrating that the protection element of the plasma device according to the eighth embodiment is disposed in the trench; 11A is a schematic cross-sectional view of the plasma device according to the ninth embodiment when the protection element is not inserted into the groove; 11B is a schematic cross-sectional view of the protection element of the plasma device according to the ninth embodiment completely inserted into the groove.
11:上部元件 11: Upper element
12:下部元件 12: Lower element
13:連結層 13: Link Layer
15:溝槽 15: Groove
30A:保護元件 30A: Protection element
31:主密封部 31: Main seal
311:第一邊角 311: First corner
312:第二邊角 312: Second corner
H1:軸向厚度 H 1 : Axial thickness
Hg:垂直高度 H g : vertical height
L1:徑向最大寬度 L 1 : radial maximum width
Lg:長度 L g : length
Claims (23)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110212415U TWM623034U (en) | 2021-10-21 | 2021-10-21 | Protection element of plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110212415U TWM623034U (en) | 2021-10-21 | 2021-10-21 | Protection element of plasma device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM623034U true TWM623034U (en) | 2022-02-01 |
Family
ID=81324061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110212415U TWM623034U (en) | 2021-10-21 | 2021-10-21 | Protection element of plasma device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM623034U (en) |
-
2021
- 2021-10-21 TW TW110212415U patent/TWM623034U/en unknown
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