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TWM623034U - Protection element of plasma device - Google Patents

Protection element of plasma device Download PDF

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Publication number
TWM623034U
TWM623034U TW110212415U TW110212415U TWM623034U TW M623034 U TWM623034 U TW M623034U TW 110212415 U TW110212415 U TW 110212415U TW 110212415 U TW110212415 U TW 110212415U TW M623034 U TWM623034 U TW M623034U
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Taiwan
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protection element
convex portion
groove
plasma device
main sealing
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TW110212415U
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Chinese (zh)
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張祐語
黃俊堯
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麥豐密封科技股份有限公司
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Priority to TW110212415U priority Critical patent/TWM623034U/en
Publication of TWM623034U publication Critical patent/TWM623034U/en

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Abstract

A protection element of a plasma device is provided. The protection element is mounted into a groove of an electrostatic chuck of the plasma device. The protection element having a ring shape comprises a primary sealing portion; wherein a side of the primary sealing portion toward the groove comprises a first edge, and the first edge is a chamfered edge. In addition, the primary sealing portion has a maximum width in radial direction and a thickness in axial direction; wherein the thickness in axial direction is larger than the vertical height of the groove; a ratio between the maximum width in radial direction and the thickness in axial direction ranges between 1:0.5 and 1:10.

Description

電漿裝置之保護元件Protection element for plasma device

本創作是有關於一種電漿裝置之保護元件,尤其是應用於電漿裝置中的靜電吸附承盤邊緣的可更換式密封環。This creation is about a protective element of a plasma device, especially a replaceable sealing ring applied to the edge of the electrostatic adsorption plate in the plasma device.

在現今的半導體製程中,為了在半導體上形成電路圖案,往往會對晶圓進行蝕刻製程,而電漿蝕刻為蝕刻製程中相當常見的一種,其以高速的電漿離子氣流沖蝕晶圓以蝕刻晶圓表面,進而形成電路圖案。電漿裝置通常包括電漿腔室及在電漿腔室中用以承載晶圓的靜電吸附承盤(electrostatic chuck,ESC)。於一晶圓蝕刻製程中,靜電吸附承盤係一種利用電來產生靜電力的裝置,靜電吸附承盤使晶圓保持在電漿腔室中的固定位置,可避免對晶圓施以物理性挾持而導致晶圓變形的問題。靜電吸附承盤通常包含一陶瓷介電材料之上部元件、軟質材料構成的連結層以及下部元件,所述上部元件由所述連結層連接至所述下部元件作為電極,電漿裝置另包括位於靜電吸附承盤周緣、作為延伸承載晶圓之延伸元件。由於製程電漿氣體是從上往下進行蝕刻,當進行所述蝕刻製程時,所述製程電漿氣體可能會經由縫隙、溝槽等侵蝕該連結層或其附近的元件表面,當所產生之副產物進入電漿腔室中則會污染電漿腔室。另外,該電漿氣體亦可能使該靜電吸附承盤遭受損壞,此類損壞通常包含發生(微)放電(Micro-Arcing)、漏電、電極損壞、電壓異常及漏氣(例如氦氣)等狀況,當前述狀況發生時,往往需更換整組靜電吸附承盤,如此一來,不僅會影響蝕刻製程良率和產能損失,更造成龐大之成本損耗。In the current semiconductor manufacturing process, in order to form circuit patterns on the semiconductor, the wafer is often etched, and plasma etching is a fairly common etching process. The surface of the wafer is etched to form circuit patterns. Plasma devices generally include a plasma chamber and an electrostatic chuck (ESC) for carrying wafers in the plasma chamber. In a wafer etching process, the electrostatic adsorption plate is a device that uses electricity to generate electrostatic force. The electrostatic adsorption plate keeps the wafer in a fixed position in the plasma chamber, which can avoid physical properties of the wafer. The problem of wafer deformation caused by clamping. The electrostatic adsorption plate usually includes an upper element of a ceramic dielectric material, a connecting layer composed of a soft material, and a lower element. The upper element is connected by the connecting layer to the lower element as an electrode. The plasma device further includes an electrostatic The peripheral edge of the suction plate is used as an extension element for extending and carrying the wafer. Since the process plasma gas is etched from top to bottom, when the etching process is performed, the process plasma gas may erode the connection layer or the surface of the components near it through gaps, trenches, etc. By-products entering the plasma chamber contaminate the plasma chamber. In addition, the plasma gas may also damage the electrostatic adsorption plate, such damage usually includes (Micro-Arcing), leakage, electrode damage, abnormal voltage and gas leakage (such as helium) and other conditions , When the aforementioned situation occurs, it is often necessary to replace the entire set of electrostatic adsorption pads, which will not only affect the yield of the etching process and the loss of production capacity, but also cause huge cost losses.

為了解決前述問題,現有技術通常於溝槽中填入環氧樹脂、矽膠等永久性填充物;然而,由於前述的永久性填充物仍會被電漿氣體蝕刻而耗損;在長期使用後,前述的永久性填充物不僅會失去對溝槽的保護性,甚至經蝕刻而產生的碎屑還會污染製程。再者,所述永久性填充物的有效期間難以估計,受到侵蝕後又不易移除,導致業者無法定期補強或更換,對整體晶圓製程良率造成負面影響。In order to solve the aforementioned problems, the prior art usually fills the trenches with permanent fillers such as epoxy resin and silicon glue; however, the aforementioned permanent fillers will still be etched and worn by plasma gas; after long-term use, the aforementioned permanent fillers Not only does the permanent filler lose its protection to the trenches, but even debris from etching can contaminate the process. Furthermore, the effective period of the permanent filler is difficult to estimate, and it is difficult to remove after being corroded, so that the industry cannot regularly reinforce or replace it, which has a negative impact on the overall wafer process yield.

有鑑於現有技術的缺點以及不足,本創作的目的係提供一便於定期更換的保護元件,讓工程人員在所述保護元件破損、產生漏氣前能及時更換,使包含其的電漿裝置在進行電漿蝕刻製程時能更加穩定、安全。In view of the shortcomings and deficiencies of the prior art, the purpose of this creation is to provide a protective element that is easy to replace regularly, so that engineers can replace the protective element in time before the protective element is damaged and air leaks occur, so that the plasma device containing it can be replaced in time. The plasma etching process can be more stable and safe.

為達到上述之創作目的,本創作所採用之技術手段為提供一種電漿裝置之保護元件,其設置於一電漿裝置中;其中,該電漿裝置包括有一靜電吸附承盤和可更換的該保護元件。該靜電吸附承盤包括一上部元件、一下部元件以及一連結層,該連結層連接該上部元件與該下部元件,並且於該連結層的一側緣和該上部元件的一部分下緣及該下部元件的一部分上緣共同形成一溝槽。該保護元件具有一環形結構,其設置於該靜電吸附承盤的該溝槽中;該保護元件包括:一主密封部,該主密封部朝向該溝槽的一側具有一第一邊角,該第一邊角為一倒角(chamfer);該主密封部具有一徑向最大寬度和一軸向厚度,該軸向厚度係大於該溝槽的垂直高度,以及該徑向最大寬度與該軸向厚度的比例介於1:0.5至1:10。於本創作中,所述軸向厚度是指該主密封部於該徑向最大寬度的中心點的垂直厚度。In order to achieve the above-mentioned purpose of creation, the technical means used in this creation is to provide a protection element for a plasma device, which is arranged in a plasma device; wherein, the plasma device includes an electrostatic adsorption support plate and the replaceable protection components. The electrostatic adsorption holding plate includes an upper element, a lower element and a connecting layer, the connecting layer connects the upper element and the lower element, and a side edge of the connecting layer and a part of the lower edge of the upper element and the lower part A part of the upper edge of the element together forms a groove. The protection element has an annular structure, which is arranged in the groove of the electrostatic adsorption support plate; the protection element includes: a main sealing part, the side of the main sealing part facing the groove has a first corner, The first corner is a chamfer; the main sealing portion has a radial maximum width and an axial thickness, the axial thickness is greater than the vertical height of the groove, and the radial maximum width and the The ratio of axial thickness is from 1:0.5 to 1:10. In the present invention, the axial thickness refers to the vertical thickness of the main sealing portion at the center point of the radial maximum width.

本創作藉由限定主密封部於軸向(以保護元件的中心點定義,亦即垂直方向)上的厚度大於該溝槽的垂直高度,使得所述主密封部可與該溝槽緊密地貼合,以達到密封之效果。同時,本創作將主密封部朝向該溝槽的一側的至少一邊角(即第一邊角)設計成倒角,有助於安裝該保護元件時能順利插嵌於溝槽中。此外,本創作考量保護元件安裝於溝槽中的密封性,藉由限定該保護元件的徑向最大寬度與該軸向厚度的比例範圍,可提高該保護元件填入溝槽後與溝槽的密合度,且更可適用於各種不同尺寸的溝槽。據此,本創作的電漿裝置之保護元件能使電漿蝕刻製程更加穩定、安全,進而提升包含晶圓之最終產品的產品良率。In the present invention, the thickness of the main sealing part in the axial direction (defined by the center point of the protection element, that is, the vertical direction) is greater than the vertical height of the groove, so that the main sealing part can closely adhere to the groove together to achieve the effect of sealing. At the same time, in the present invention, at least one corner (ie, the first corner) of the side of the main sealing portion facing the groove is designed to be chamfered, which is helpful for the protection element to be smoothly inserted into the groove when installing. In addition, the present invention considers the tightness of the protective element installed in the groove, and by limiting the ratio of the maximum radial width of the protective element to the axial thickness, the sealing performance between the protective element and the groove can be improved after the protective element is filled into the groove. tightness, and more suitable for grooves of various sizes. Accordingly, the protection element of the plasma device of the present invention can make the plasma etching process more stable and safe, thereby improving the product yield of the final product including the wafer.

於本創作中,該主密封部朝向該溝槽的一側更具有一第二邊角,該第二邊角可為一直角、一圓角或一倒角,但不限於此。較佳的,該第二邊角為一倒角。當該主密封部朝向該溝槽的一側所具有的兩邊角(即第一邊角和第二邊角)皆為倒角時,可使該保護元件更順利地插嵌該溝槽中。In the present invention, the side of the main sealing portion facing the groove further has a second corner, and the second corner may be a right corner, a rounded corner or a chamfered corner, but not limited thereto. Preferably, the second corner is a chamfered corner. When the two corners (ie, the first corner and the second corner) of the side of the main sealing portion facing the groove are both chamfered, the protection element can be inserted into the groove more smoothly.

在一些實施態樣中,該主密封部的斷面呈一梯形,所述梯形具有相互平行的一上底邊和一下底邊,以及連接該上底邊和該下底邊的相對兩腰線。其中,該上底邊係該主密封部朝向該溝槽的一側(內側)所形成,而該下底邊則是由該主密封部的朝向遠離溝槽方向的一側(外側)所形成。在一些實施例中,該上底邊的長度大於該下底邊的長度,該上底邊的長度係大於該溝槽的垂直高度,該下底邊的長度係大於或等於該溝槽的垂直高度;較佳的,該上底邊的長度和該下底邊的長度的比例為1:0.85至1:0.95。或者,在另一些實施例中,該上底邊的長度小於該下底邊的長度,該上底邊的長度係大於或等於該溝槽的垂直高度,該下底邊的長度係大於該溝槽的垂直高度;較佳的,該上底邊的長度和該下底邊的長度的比例為1:1.05至1:1.15。In some embodiments, the cross section of the main sealing portion is a trapezoid, and the trapezoid has an upper bottom edge and a lower bottom edge that are parallel to each other, and two opposite waistlines connecting the upper bottom edge and the lower bottom edge. . Wherein, the upper bottom edge is formed by the side (inside) of the main sealing portion facing the groove, and the lower bottom edge is formed by the side (outside) of the main sealing portion facing away from the groove . In some embodiments, the length of the upper base is greater than the length of the lower base, the length of the upper base is greater than the vertical height of the groove, and the length of the lower base is greater than or equal to the vertical height of the groove Height; preferably, the ratio of the length of the upper base to the length of the lower base is 1:0.85 to 1:0.95. Or, in other embodiments, the length of the upper base is less than the length of the lower base, the length of the upper base is greater than or equal to the vertical height of the groove, and the length of the lower base is greater than the groove. The vertical height of the groove; preferably, the ratio of the length of the upper base to the length of the lower base is 1:1.05 to 1:1.15.

其中,當該主密封部的斷面呈一梯形時,該主密封部的底部可以是在同一垂直高度之水平面上,亦可以是該主密封部的頂部在同一垂直高度之水平面上,還可以是該主密封部的頂部和底部都不在同一垂直高度之水平面上。較佳的,該主密封部的斷面所呈的該梯形係一等腰梯形,但不限於此。Wherein, when the cross section of the main sealing part is a trapezoid, the bottom of the main sealing part can be on the horizontal plane of the same vertical height, or the top of the main sealing part can be on the horizontal plane of the same vertical height, or It is that the top and bottom of the main seal are not on the same vertical level. Preferably, the trapezoid of the cross section of the main sealing portion is an isosceles trapezoid, but not limited to this.

較佳的,該保護元件可更包括至少一凸起於該主密封部表面的外凸部。具體而言,該保護元件可更包括於軸向上凸出該主密封部的第一外凸部,該第一外凸部與該主密封部的上側相連。在另一些實施例中,該保護元件可更包括於軸向下凸出該主密封部的第二外凸部,該第二外凸部與該主密封部的下側相連。在另一些實施例中,該保護元件可同時具有該第一外凸部和該第二外凸部,此時,該第二外凸部與該第一外凸部位於相對側。Preferably, the protection element may further include at least one convex portion protruding from the surface of the main sealing portion. Specifically, the protection element may further include a first outer convex portion protruding from the main sealing portion in the axial direction, and the first outer convex portion is connected with the upper side of the main sealing portion. In other embodiments, the protection element may further include a second outer convex portion protruding downward from the main sealing portion in the axial direction, and the second outer convex portion is connected to the lower side of the main sealing portion. In other embodiments, the protection element may have the first convex portion and the second convex portion at the same time, and in this case, the second convex portion and the first convex portion are located on opposite sides.

較佳的,所述第一外凸部和第二外凸部可獨立為單波峰型式或多重波峰型式,但不限於此。由於該主密封部的軸向厚度已大於該溝槽的垂直高度,因此,當該保護元件具有第一外凸部和/或第二外凸部時,該保護元件於垂直方向上的高度將會更加大於該溝槽的高度,雖然會加大該保護元件插嵌於該溝槽時與上部元件和/或下部元件的壁面的摩擦阻力,但由於波峰型態的外凸部的頂峰面積不大,故仍可順利安裝,且基於尖點密封原理,該保護元件於安裝後能更加緊密地與上部元件和/或下部元件的壁面相接,因此可使該保護元件提供更佳的防護效果。Preferably, the first outer convex portion and the second outer convex portion can be independently of a single wave crest type or a multiple wave crest type, but not limited thereto. Since the axial thickness of the main sealing portion is already greater than the vertical height of the groove, when the protective element has the first convex portion and/or the second convex portion, the height of the protective element in the vertical direction will be It will be larger than the height of the groove, although it will increase the frictional resistance between the protective element and the wall surface of the upper element and/or the lower element when the protective element is inserted into the groove, but the peak area of the convex part of the wave crest shape is not enough. Large, so it can still be installed smoothly, and based on the cusp sealing principle, the protective element can be more closely connected with the wall surface of the upper element and/or the lower element after installation, so the protective element can provide better protection effect .

於本創作中,該電漿裝置更包括一延伸元件,該延伸元件環繞該靜電吸附承盤的該上部元件和該下部元件,且該延伸元件的內側與該下部元件的外側維持一間距。在一些實施態樣中,該保護元件可更包括一延伸部,該延伸部係由該主密封部朝向遠離該溝槽方向的一側(即面對該延伸元件的一側)凸出成型且位於所述間距中;該延伸部於徑向方向上的最大長度小於或等於所述間距的長度。該延伸部可使該保護元件於徑向方向上的總長度必然大於該溝槽於徑向方向的長度,因此,該延伸部能提供該保護元件更好的定位效果,且當技術人員需更換電漿裝置中的保護元件時,還能使該保護元件易於移除。In the present invention, the plasma device further includes an extension element, the extension element surrounds the upper element and the lower element of the electrostatic adsorption tray, and the inner side of the extension element and the outer side of the lower element maintain a distance. In some embodiments, the protection element may further include an extension part, the extension part is protruded from the main sealing part toward the side away from the groove direction (ie the side facing the extension element) and in the space; the extension has a maximum length in the radial direction that is less than or equal to the length of the space. The extension portion can make the total length of the protection element in the radial direction necessarily greater than the length of the groove in the radial direction. Therefore, the extension portion can provide better positioning effect of the protection element, and when the technician needs to replace it When used as a protective element in a plasma device, the protective element can also be easily removed.

當該延伸部於徑向方向上的最大長度等於所述間距的長度時,該延伸部與該靜電吸附承盤的延伸元件的內側相接觸。由於該延伸部位於所述間距中,還部分填滿該靜電吸附承盤與延伸元件間的縫隙延伸該保護元件的保護範圍,使該保護元件更能夠限定延伸元件於製程中之漂移,使延伸元件與靜電吸附承盤之間的間距維持一致,進一步避免電漿氣體經由因延伸元件之漂移產生之大縫隙的一側進入溝槽中對連結層造成損害。When the maximum length of the extension portion in the radial direction is equal to the length of the spacing, the extension portion is in contact with the inner side of the extension element of the electrostatic adsorption holding plate. Since the extension part is located in the space, it also partially fills the gap between the electrostatic adsorption plate and the extension element to extend the protection range of the protection element, so that the protection element can better limit the drift of the extension element in the process, so that the extension The distance between the element and the electrostatic adsorption pad is kept the same, which further prevents the plasma gas from entering the trench through the side of the large gap caused by the drift of the extending element and causing damage to the connection layer.

在一些實施態樣中,該延伸部可由該主密封部的上側和下側往中間延伸形成;在另一些實施態樣中,該延伸部可由該主密封部的上側和下側之間向外凸出形成,但不限於此。在一些實施態樣中,該延伸部沿該主密封部軸向的截面形狀可為三角形、圓弧形、波浪狀(即由多個圓弧形所組成)或鋸齒狀(即由多個三角形所組成),但不限於此。In some embodiments, the extension portion may be formed by extending from the upper side and the lower side of the main sealing portion toward the middle; in other embodiments, the extension portion may be formed by extending outward from the upper side and the lower side of the main sealing portion. The protrusions are formed, but not limited thereto. In some embodiments, the cross-sectional shape of the extension part along the axial direction of the main sealing part may be triangular, circular arc, wavy (that is, composed of a plurality of circular arcs) or zigzag (that is, composed of a plurality of triangular shapes) consisting of), but not limited thereto.

較佳的,主密封部的徑向最大寬度與該延伸部於徑向方向的最大長度之比例為1:0.05至1:3,但不限於此。Preferably, the ratio of the maximum radial width of the main sealing portion to the maximum length of the extension portion in the radial direction is 1:0.05 to 1:3, but not limited thereto.

於本創作中,該主密封部朝向遠離該溝槽方向的一側可平行或不平行於該保護元件的軸向方向。舉例而言,當該主密封部朝向遠離該溝槽方向的一側平行於該保護元件的軸向方向時,該主密封部的斷面可約呈矩形,但不限於此。當該主密封部朝向遠離該溝槽方向的一側不平行於該保護元件的軸向方向時,其可以是由該主密封部的上側往靠近該延伸元件的方向斜向延伸至與該主密封部的下側相連,亦可以是由該主密封部的上側往靠近該溝槽的方向斜向延伸至與該主密封部的下側相連。另外,該主密封部遠離該溝槽的一側還可以向內(即向溝槽的方向)凹陷,即從該主密封部的斷面來看,該主密封部遠離該溝槽的一側可為一弧線,但不限於此。因此,該主密封部的徑向最小寬度則會小於該溝槽於徑向方向的長度。In the present invention, the side of the main sealing portion facing away from the groove may be parallel or non-parallel to the axial direction of the protection element. For example, when the side of the main sealing portion facing away from the groove is parallel to the axial direction of the protection element, the cross-section of the main sealing portion may be approximately rectangular, but not limited thereto. When the side of the main sealing part facing away from the groove is not parallel to the axial direction of the protection element, it may extend obliquely from the upper side of the main sealing part to the direction close to the extension element to the direction close to the main sealing part. The lower side of the sealing part is connected, and it can also extend obliquely from the upper side of the main sealing part to the direction close to the groove to be connected with the lower side of the main sealing part. In addition, the side of the main sealing portion away from the groove can also be recessed inward (that is, in the direction of the groove), that is, from the cross-section of the main sealing portion, the side of the main sealing portion away from the groove It can be an arc, but not limited to this. Therefore, the radial minimum width of the main seal portion is smaller than the radial length of the groove.

為了與溝槽的尺寸搭配以提升該保護元件與溝槽的密合度,該主密封部的該徑向最大寬度與該軸向厚度的比例可視需求調整;舉例而言,當溝槽的截面接近方形時,較佳的,該主密封部的該徑向最大寬度與該軸向厚度的比例為0.8:1至1:2;或者,當溝槽的截面接近細長矩形時,較佳的,該主密封部的該徑向最大寬度與該軸向厚度的比例為1:2.5至1:7.5。In order to match the size of the groove to improve the tightness between the protection element and the groove, the ratio of the maximum radial width to the axial thickness of the main sealing portion can be adjusted according to the needs; for example, when the cross section of the groove is close to When the shape is square, preferably, the ratio of the radial maximum width to the axial thickness of the main sealing portion is 0.8:1 to 1:2; or, when the cross section of the groove is close to an elongated rectangle, preferably, the The ratio of the radial maximum width to the axial thickness of the primary seal is 1:2.5 to 1:7.5.

較佳的,該主密封部的徑向最大寬度與該溝槽於徑向方向的長度之比例為1:1.05至1:1.2,但不限於此。Preferably, the ratio of the maximum radial width of the main sealing portion to the length of the groove in the radial direction is 1:1.05 to 1:1.2, but not limited thereto.

較佳的,該主密封部的軸向厚度與溝槽的垂直高度之比例為1.02:1至1.15:1,但不限於此。Preferably, the ratio of the axial thickness of the main sealing portion to the vertical height of the groove is 1.02:1 to 1.15:1, but not limited thereto.

依據本創作,該保護元件的全部構件可皆一體成型,或者部分構件彼此一體成型後再與其他部分構件接合。較佳的,所述保護元件由該主密封部、該第一外凸部和該第二外凸部所構成,且該主密封部、該第一外凸部和該第二外凸部呈一體成型,此態樣屬於全部構件皆一體成型。或者,所述保護元件由該主密封部和該延伸部所構成,且該主密封部和該延伸部呈一體成型。According to the present invention, all the components of the protection element may be integrally formed, or some components may be integrally formed with each other and then joined with other partial components. Preferably, the protection element is composed of the main sealing part, the first convex part and the second convex part, and the main sealing part, the first convex part and the second convex part are in the shape of the main sealing part, the first convex part and the second convex part. One-piece molding, this state belongs to all the components are one-piece molding. Alternatively, the protection element is composed of the main sealing part and the extension part, and the main sealing part and the extension part are integrally formed.

較佳的,所述保護元件的材質包括氟化橡膠(Fluoro-elastomer,FKM)、全氟化橡膠(Perfluoro-elastomer,FFKM)或氟矽橡膠(Fluorosilicone Rubber,FVMQ)等材質,但不限於此。Preferably, the material of the protection element includes Fluoro-elastomer (FKM), Perfluoro-elastomer (FFKM) or Fluorosilicone Rubber (FVMQ), etc., but not limited thereto .

依據本創作,所述上部元件的材質通常包括陶瓷介電材料,但不限於此。另外,所述上部元件的內部可設有一電極,所述電極的材質通常為銅或鎢等金屬,但不限於此。According to the present invention, the material of the upper element generally includes a ceramic dielectric material, but is not limited thereto. In addition, an electrode may be provided inside the upper element, and the material of the electrode is usually copper or tungsten, but not limited thereto.

依據本創作,所述下部元件的內部除了設置有流體供應單元,還可設置一控溫系統以穩定靜電吸附承盤的溫度,進而避免靜電吸附承盤的溫度變化影響晶圓的蝕刻速率。另外,所述流體供應單元所供應的工作流體,通常為氦氣,但不限於此;所述工作流體可轉移晶圓的熱能,進而調節晶圓的溫度並控制蝕刻速率。According to the present invention, in addition to a fluid supply unit, a temperature control system can be arranged inside the lower element to stabilize the temperature of the electrostatic adsorption carrier, thereby preventing the temperature change of the electrostatic adsorption carrier from affecting the etching rate of the wafer. In addition, the working fluid supplied by the fluid supply unit is usually helium gas, but not limited thereto; the working fluid can transfer the thermal energy of the wafer, thereby adjusting the temperature of the wafer and controlling the etching rate.

以下請配合圖式及本創作之示例實施例,進一步闡述本創作為達成預定目的所採取的技術手段。In the following, please refer to the drawings and the exemplary embodiments of the present creation to further describe the technical means adopted by the present creation to achieve the predetermined purpose.

本創作之電漿裝置之保護元件可應用設置於如圖1A和圖1B所示之現有技術中的電漿裝置1中。該電漿裝置1包括有一靜電吸附承盤10。該靜電吸附承盤10包括有一上部元件11、一下部元件12、一連結層13和一流體供應單元14。其中,該連結層13連接該上部元件11與該下部元件12,並且於該連結層13的一側緣131和部分的上部元件下緣111及部分的下部元件上緣121共同形成一溝槽15,且溝槽15位於上部元件11和下部元件12之間。該上部元件11可用於承載一晶圓W,該流體供應單元14設於該下部元件12之內部,並經過該上部元件11對該晶圓W提供工作流體141(例如氦氣)。另外,該電漿裝置1還包括一延伸元件20,該延伸元件20環繞靜電吸附承盤10的上部元件11和下部元件12,且該延伸元件20的內側與下部元件12的外側維持一間距R,所述間距R即形成一環狀的縫隙,所述縫隙與該延伸元件20中的通道(圖未示)相連,而可通至延伸元件20之外圍。製程電漿氣體120由上往下進行蝕刻,當進行一電漿蝕刻製程時,所述製程電漿氣體120可能會經由所述縫隙、溝槽15侵蝕該連結層13或其附近的元件表面,因此,電漿裝置1需將具有環形結構的保護元件設置於該靜電吸附承盤10的環狀的溝槽15中,以提升電漿蝕刻製程的穩定性和安全性。The protection element of the plasma device of the present invention can be applied to the plasma device 1 in the prior art as shown in FIG. 1A and FIG. 1B . The plasma device 1 includes an electrostatic adsorption tray 10 . The electrostatic suction tray 10 includes an upper element 11 , a lower element 12 , a bonding layer 13 and a fluid supply unit 14 . Wherein, the connection layer 13 connects the upper element 11 and the lower element 12 , and a groove 15 is formed on a side edge 131 of the connection layer 13 , a part of the lower edge 111 of the upper element and a part of the upper edge 121 of the lower element. , and the groove 15 is located between the upper element 11 and the lower element 12 . The upper element 11 can be used to carry a wafer W. The fluid supply unit 14 is disposed inside the lower element 12 and supplies the wafer W with a working fluid 141 (eg, helium) through the upper element 11 . In addition, the plasma device 1 further includes an extension element 20 , the extension element 20 surrounds the upper element 11 and the lower element 12 of the electrostatic adsorption holding plate 10 , and maintains a distance R between the inner side of the extension element 20 and the outer side of the lower element 12 , the distance R forms an annular gap, and the gap is connected with the channel (not shown) in the extension element 20 and can lead to the periphery of the extension element 20 . The process plasma gas 120 is etched from top to bottom. When a plasma etching process is performed, the process plasma gas 120 may erode the surface of the connecting layer 13 or its vicinity through the gaps and trenches 15 . Therefore, the plasma device 1 needs to dispose the protection element with the annular structure in the annular groove 15 of the electrostatic adsorption plate 10 to improve the stability and safety of the plasma etching process.

第一實施例first embodiment

請參考圖2、圖3A和圖3B,圖2即為本創作的第一實施例之保護元件30A之俯視示意圖,由圖2可以知道,保護元件30A具有一環形結構。而圖3A中的保護元件30A為依據圖2中的「B-B斷面線」所示的斷面結構,且是保護元件30A未塞入靜電吸附承盤之溝槽15中的示意圖,圖3B則是保護元件30A完全塞入於靜電吸附承盤之溝槽15中的示意圖。Please refer to FIG. 2 , FIG. 3A and FIG. 3B . FIG. 2 is a schematic top view of the protection element 30A according to the first embodiment of the present invention. As can be seen from FIG. 2 , the protection element 30A has an annular structure. The protection element 30A in FIG. 3A is a schematic diagram according to the cross-sectional structure shown by “BB section line” in FIG. 2 , and the protection element 30A is not inserted into the groove 15 of the electrostatic adsorption plate, and FIG. 3B shows It is a schematic diagram showing that the protection element 30A is completely inserted into the groove 15 of the electrostatic adsorption holding plate.

保護元件30A包括一主密封部31,且該主密封部31朝向溝槽15的一側具有一第一邊角311和一第二邊角312,該第一邊角311和該第二邊角312皆為倒角。另外,該主密封部31朝向遠離溝槽15方向的一側平行於該保護元件30A的軸向方向,因此,該主密封部31的斷面約呈一矩形。The protection element 30A includes a main sealing portion 31 , and the side of the main sealing portion 31 facing the groove 15 has a first corner 311 and a second corner 312 , the first corner 311 and the second corner 312 312 are all chamfers. In addition, the side of the main sealing portion 31 facing away from the groove 15 is parallel to the axial direction of the protection element 30A. Therefore, the cross-section of the main sealing portion 31 is approximately a rectangle.

以所述保護元件30A的中心點定義,於所述保護元件30A的徑向方向上,該主密封部31具有一徑向最大寬度L 1;以及,於保護元件30A的軸向方向上,該主密封部31具有一軸向厚度H 1,所述軸向厚度H 1是指該主密封部31於該徑向最大寬度L 1的中心點(正中間)的垂直厚度。其中,該軸向厚度H 1大於溝槽15的垂直高度H g,該主密封部31的徑向最大寬度L 1與軸向厚度H 1的比例為1:1.25。另外,主密封部31的徑向最大寬度L 1與溝槽15於徑向方向的長度L g的比例為1:1.05。 Defined by the center point of the protective element 30A, in the radial direction of the protective element 30A, the main sealing portion 31 has a radial maximum width L 1 ; and, in the axial direction of the protective element 30A, the The main seal portion 31 has an axial thickness H 1 , and the axial thickness H 1 refers to the vertical thickness of the main seal portion 31 at the center point (center) of the radial maximum width L 1 . The axial thickness H 1 is greater than the vertical height H g of the groove 15 , and the ratio of the radial maximum width L 1 of the main sealing portion 31 to the axial thickness H 1 is 1:1.25. In addition, the ratio of the radial maximum width L 1 of the main seal portion 31 to the length L g of the groove 15 in the radial direction is 1:1.05.

第二實施例Second Embodiment

請參考圖4,圖4為本創作的第二實施例之保護元件30B完全塞入圖1B中的靜電吸附承盤之溝槽15中的示意圖。第二實施例之保護元件30B可包含與第一實施例之保護元件30A相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第二實施例之保護元件30B與第一實施例之保護元件30A主要不同之處在於:(1)保護元件30B的主密封部31朝向溝槽15的一側所具有的第一邊角311和第二邊角312之中,僅該第一邊角311為倒角,而第二邊角312為直角;其中,第一邊角311即為保護元件30B朝向溝槽15的一側與保護元件30B的下側相接的接角;以及,(2)未塞入靜電吸附承盤之溝槽15時,該主密封部31的徑向最大寬度與軸向厚度的比例為1:4.5。Please refer to FIG. 4 . FIG. 4 is a schematic diagram illustrating that the protection element 30B of the second embodiment of the present invention is completely inserted into the groove 15 of the electrostatic adsorption support plate in FIG. 1B . The protection element 30B of the second embodiment may include the same parts as the protection element 30A of the first embodiment, and the same parts will be denoted by the same reference numerals and will not be described in detail. The main difference between the protection element 30B of the second embodiment and the protection element 30A of the first embodiment is: (1) the first corner 311 and Among the second corners 312 , only the first corner 311 is chamfered, and the second corner 312 is a right angle; wherein, the first corner 311 is the side of the protection element 30B facing the groove 15 and the protection element and (2) when not plugged into the groove 15 of the electrostatic adsorption plate, the ratio of the radial maximum width to the axial thickness of the main seal portion 31 is 1:4.5.

第三實施例Third Embodiment

請參考圖5A和圖5B,圖5A係第三實施例之保護元件30C未塞入溝槽15的斷面示意圖,而圖5B係第三實施例之保護元件30C完全塞入溝槽15的斷面示意圖。Please refer to FIGS. 5A and 5B . FIG. 5A is a schematic cross-sectional view of the protection element 30C of the third embodiment without being inserted into the trench 15 , and FIG. 5B is a broken view of the protection element 30C of the third embodiment completely inserted into the trench 15 . face diagram.

第三實施例之保護元件30C可包含與第二實施例之保護元件30B相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第三實施例之保護元件30C與第二實施例之保護元件30B主要不同之處在於:主密封部31的上側和下側分別由上、下兩斜面所形成,即所述上側和下側不平行。也就是說,該主密封部31的斷面約呈一梯形,所述梯形具有相互平行的上底邊(即該主密封部31朝向溝槽15方向的內側所形成)和下底邊(即該主密封部31朝向遠離溝槽15方向的外側所形成),以及連接所述上、下底邊的相對兩腰線。其中,上底邊的長度H 2大於下底邊的長度H 3,且上底邊的長度H 2大於溝槽15的垂直高度H g,下底邊的長度H 3等於溝槽15的垂直高度H g,此外,上底邊的長度H 2和下底邊的長度H 3的比例為1.12:1。 The protection element 30C of the third embodiment may include the same parts as the protection element 30B of the second embodiment, and the same parts will be denoted by the same reference numerals and will not be described in detail. The main difference between the protection element 30C of the third embodiment and the protection element 30B of the second embodiment is that the upper and lower sides of the main sealing portion 31 are respectively formed by upper and lower inclined surfaces, that is, the upper and lower sides are not parallel. That is to say, the cross-section of the main sealing portion 31 is about a trapezoid, and the trapezoid has an upper bottom edge (that is, the main sealing portion 31 is formed toward the inner side of the groove 15 ) and a lower bottom edge (that is, the main sealing portion 31 is formed toward the inner side of the groove 15 ) that are parallel to each other. The main sealing portion 31 is formed toward the outer side in the direction away from the groove 15 ), and two opposite waistlines connecting the upper and lower bottom edges. The length H 2 of the upper base is greater than the length H 3 of the lower base, the length H 2 of the upper base is greater than the vertical height H g of the groove 15 , and the length H 3 of the lower base is equal to the vertical height of the groove 15 H g , in addition, the ratio of the length H 2 of the upper base and the length H 3 of the lower base is 1.12:1.

第四實施例Fourth Embodiment

請參考圖6,圖6為本創作的第四實施例之保護元件30D未塞入圖1B中的靜電吸附承盤之溝槽15中的示意圖。第四實施例之保護元件30D可包含與第三實施例之保護元件30C相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第四實施例之保護元件30D與第三實施例之保護元件30C主要不同之處在於:於該主密封部31的梯形斷面中,所述梯形所具有的相互平行的上底邊和下底邊的相對長度關係不同。於第四實施例之保護元件30D中,上底邊的長度H 2小於下底邊的長度H 3,同時,上底邊的長度H 2略大於溝槽15的垂直高度H g,因此,下底邊的長度H 3必然也大於溝槽15的垂直高度H g,此外,上底邊的長度H 2和下底邊的長度H 3的比例為1:1.1。 Please refer to FIG. 6 . FIG. 6 is a schematic diagram of the protection element 30D according to the fourth embodiment of the present invention not being inserted into the groove 15 of the electrostatic adsorption support plate shown in FIG. 1B . The protection element 30D of the fourth embodiment may include the same parts as the protection element 30C of the third embodiment, and the same parts will be denoted by the same reference numerals and will not be described in detail. The main difference between the protection element 30D of the fourth embodiment and the protection element 30C of the third embodiment is that in the trapezoidal cross-section of the main sealing portion 31 , the trapezoid has an upper base and a lower base that are parallel to each other. The relative length relationship of the sides is different. In the protection element 30D of the fourth embodiment, the length H 2 of the upper base is smaller than the length H 3 of the lower base, and at the same time, the length H 2 of the upper base is slightly larger than the vertical height H g of the groove 15 , therefore, the lower The length H 3 of the base must also be greater than the vertical height H g of the groove 15 , and the ratio of the length H 2 of the upper base to the length H 3 of the lower base is 1:1.1.

第五實施例Fifth Embodiment

請參考圖7A和圖7B,圖7A係第五實施例之保護元件30E未塞入溝槽15的斷面示意圖,而圖7B係第五實施例之保護元件30E完全塞入溝槽15的斷面示意圖。Please refer to FIGS. 7A and 7B , FIG. 7A is a schematic cross-sectional view of the protection element 30E of the fifth embodiment not inserted into the groove 15 , and FIG. 7B is a broken view of the protection element 30E of the fifth embodiment completely inserted into the trench 15 . face diagram.

第五實施例之保護元件30E包括:一主密封部31、一第一外凸部32以及一第二外凸部33,主密封部31、第一外凸部32以及第二外凸部33係呈一體成型。該主密封部31朝向遠離溝槽15方向的一側平行於該保護元件30E的軸向方向,因此,該主密封部31的斷面約呈一矩形;而主密封部31朝向溝槽15的一側所具有的第一邊角311和第二邊角312之中,僅該第一邊角311為倒角,而第二邊角312為直角。該第一外凸部32與該主密封部31的上側相連,該第二外凸部33與該主密封部31的下側相連,且該第一外凸部32與該第二外凸部33位於該主密封部31之相對側。其中,該第一外凸部32與該第二外凸部33皆為單波峰型式。The protection element 30E of the fifth embodiment includes: a main sealing part 31 , a first convex part 32 and a second convex part 33 , the main sealing part 31 , the first convex part 32 and the second convex part 33 The system is integrally formed. The side of the main sealing portion 31 facing away from the groove 15 is parallel to the axial direction of the protection element 30E. Therefore, the cross-section of the main sealing portion 31 is approximately a rectangle; Among the first corners 311 and the second corners 312 on one side, only the first corner 311 is chamfered, and the second corner 312 is a right angle. The first convex portion 32 is connected to the upper side of the main sealing portion 31 , the second convex portion 33 is connected to the lower side of the main sealing portion 31 , and the first convex portion 32 is connected to the second convex portion 33 is located on the opposite side of the main seal portion 31 . Wherein, the first convex portion 32 and the second convex portion 33 are both in the form of single peaks.

此外,該主密封部31的徑向最大寬度L 1與溝槽15於徑向方向的長度L g的比例約為1:1.05,以及,該主密封部31的軸向厚度H 1大於溝槽15的垂直高度H g,所述軸向厚度H 1是指該主密封部31於該徑向最大寬度L 1的中心點(正中間)的垂直厚度。並且,該主密封部31的徑向最大寬度L 1與軸向厚度H 1的比例為1:5。 In addition, the ratio of the maximum radial width L 1 of the main seal portion 31 to the length L g of the groove 15 in the radial direction is about 1:1.05, and the axial thickness H 1 of the main seal portion 31 is larger than the groove 15 The vertical height H g of 15 , the axial thickness H 1 refers to the vertical thickness of the main seal portion 31 at the center point (center) of the radial maximum width L 1 . In addition, the ratio of the radial maximum width L 1 to the axial thickness H 1 of the main seal portion 31 is 1:5.

第六實施例Sixth Embodiment

請參考圖8A和圖8B,圖8A係第六實施例之保護元件30F未塞入溝槽15的斷面示意圖,而圖8B係第六實施例之保護元件30F完全塞入溝槽15的斷面示意圖。Please refer to FIGS. 8A and 8B . FIG. 8A is a schematic cross-sectional view of the protection element 30F of the sixth embodiment that is not inserted into the groove 15 , and FIG. 8B is a broken view of the protection element 30F of the sixth embodiment completely inserted into the trench 15 . face diagram.

第六實施例之保護元件30F可包含與第五實施例之保護元件30E相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第六實施例之保護元件30F與第五實施例之保護元件30E主要不同之處在於:第六實施例之保護元件30F的主密封部31朝向溝槽15的一側所具有的第一邊角311和一第二邊角312皆為倒角。The protection element 30F of the sixth embodiment may include the same parts as the protection element 30E of the fifth embodiment, and the same parts will be denoted by the same reference numerals and will not be described in detail. The main difference between the protection element 30F of the sixth embodiment and the protection element 30E of the fifth embodiment is that the main sealing portion 31 of the protection element 30F of the sixth embodiment has a first corner on the side facing the groove 15 . 311 and a second corner 312 are both chamfered.

第七實施例Seventh Embodiment

請參考圖9,圖9係第七實施例之保護元件30G未塞入溝槽15的斷面示意圖。第七實施例之保護元件30G可包含與第五實施例之保護元件30E相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第七實施例之保護元件30G與第五實施例之保護元件30E主要不同之處在於:(1)保護元件30G的第一外凸部32與第二外凸部33皆為多重波峰型式,更具體來說,第一外凸部32與第二外凸部33的多重波峰型式各具有4個波峰;以及,(2)該主密封部31的徑向最大寬度L 1與軸向厚度H 1的比例為1:6。 Please refer to FIG. 9 . FIG. 9 is a schematic cross-sectional view of the protection element 30G of the seventh embodiment that is not inserted into the groove 15 . The protection element 30G of the seventh embodiment may include the same parts as the protection element 30E of the fifth embodiment, and the same parts will be denoted by the same reference numerals and will not be described in detail. The main difference between the protection element 30G of the seventh embodiment and the protection element 30E of the fifth embodiment is that: (1) the first protruding portion 32 and the second protruding portion 33 of the protection element 30G are both in the form of multiple peaks, and more Specifically, the multiple peak patterns of the first convex portion 32 and the second convex portion 33 each have four peaks; and (2) the radial maximum width L 1 and the axial thickness H 1 of the main sealing portion 31 The ratio is 1:6.

第八實施例Eighth Embodiment

請參考圖10A和圖10B,圖10A係第八實施例之保護元件30H未塞入溝槽15的斷面示意圖,而圖10B係第八實施例之保護元件30H設置於溝槽15的示意圖。第八實施例之保護元件30H可包含與第二實施例之保護元件30B相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第八實施例之保護元件30H與第二實施例之保護元件30B主要不同之處在於:保護元件30H更包括一延伸部34。Please refer to FIGS. 10A and 10B , FIG. 10A is a schematic cross-sectional view of the protection element 30H of the eighth embodiment without being inserted into the groove 15 , and FIG. 10B is a schematic diagram of the protection element 30H of the eighth embodiment disposed in the groove 15 . The protection element 30H of the eighth embodiment may include the same parts as the protection element 30B of the second embodiment, and the same parts will be denoted by the same reference numerals and will not be described in detail. The main difference between the protection element 30H of the eighth embodiment and the protection element 30B of the second embodiment is that the protection element 30H further includes an extension portion 34 .

具體而言,第八實施例之保護元件30H包括:主密封部31和延伸部34,該延伸部34係由該主密封部31朝向遠離溝槽15方向的一側(即面對該延伸元件20的一側)、且是從主密封部31的上側和下側之間的位置向外凸出成型且位於所述間距R中,而延伸部34沿主密封部31軸向的截面形狀為一三角形。其中,主密封部31和延伸部34係呈一體成型。該主密封部31朝向遠離溝槽15方向的一側平行於該保護元件30H的軸向方向,因此,該主密封部31的斷面約呈一矩形。Specifically, the protection element 30H of the eighth embodiment includes: a main sealing part 31 and an extension part 34 , and the extension part 34 is directed away from the groove 15 by the main sealing part 31 (that is, facing the extension element). 20), and is formed to protrude outward from the position between the upper and lower sides of the main sealing part 31 and is located in the distance R, and the cross-sectional shape of the extension part 34 along the axial direction of the main sealing part 31 is a triangle. Wherein, the main sealing part 31 and the extension part 34 are integrally formed. The side of the main sealing portion 31 facing away from the groove 15 is parallel to the axial direction of the protection element 30H. Therefore, the cross-section of the main sealing portion 31 is approximately a rectangle.

其中,延伸部34於徑向方向上的最大長度L 2小於所述間距R的長度;主密封部31的徑向最大寬度L 1與該延伸部34於徑向方向的最大長度L 2之比例為1:0.1。 The maximum length L 2 of the extension portion 34 in the radial direction is smaller than the length of the distance R; the ratio of the maximum radial width L 1 of the main sealing portion 31 to the maximum length L 2 of the extension portion 34 in the radial direction is 1:0.1.

由於保護元件30H具有延伸部34,因此該保護元件30H更能夠承受電漿氣體的衝擊與侵蝕,更能有效避免電漿氣體經由所述間距R進入溝槽15中對連結層13造成損害;另外,由於所述延伸部34於徑向方向上的最大長度L 2略小於該間距R之長度,可利於將該保護元件30H安裝於溝槽15中。 Since the protection element 30H has the extension portion 34, the protection element 30H can better withstand the impact and erosion of the plasma gas, and can effectively prevent the plasma gas from entering the trench 15 through the distance R and causing damage to the connection layer 13; , since the maximum length L 2 of the extending portion 34 in the radial direction is slightly smaller than the length of the distance R, it is advantageous to install the protection element 30H in the groove 15 .

第九實施例Ninth Embodiment

請參考圖11A和圖11B,圖11A係第九實施例之保護元件30I未塞入溝槽15的斷面示意圖,而圖11B係第九實施例之保護元件30I完全塞入溝槽15的斷面示意圖。第九實施例之保護元件30I可包含與第五實施例之保護元件30E相同的部分,以下相同的部分將以相同的標號表示,並不再詳述。第九實施例之保護元件30I與第五實施例之保護元件30E主要不同之處在於:(1)保護元件30I的主密封部31朝向遠離溝槽15方向的一側不平行於保護元件30I的軸向方向;以及,(2)該主密封部31的徑向最大寬度L 1與軸向厚度H 1的比例為1:4.3。更具體來說,該主密封部31遠離溝槽15的一側向內(即向溝槽15的方向)凹陷,即從該主密封部31的斷面來看,該主密封部31遠離溝槽15的一側為一內凹弧線。因此,於保護元件30I的徑向方向上,主密封部31的徑向最小寬度L 3小於溝槽15於徑向方向的長度L gPlease refer to FIGS. 11A and 11B . FIG. 11A is a schematic cross-sectional view of the protection element 30I of the ninth embodiment that is not inserted into the groove 15 , and FIG. face diagram. The protection element 30I of the ninth embodiment may include the same parts as the protection element 30E of the fifth embodiment, and the same parts will be denoted by the same reference numerals and will not be described in detail. The main difference between the protection element 30I of the ninth embodiment and the protection element 30E of the fifth embodiment is that: (1) the side of the main sealing portion 31 of the protection element 30I facing away from the groove 15 is not parallel to the side of the protection element 30I. The axial direction; and (2) the ratio of the radial maximum width L 1 to the axial thickness H 1 of the main seal portion 31 is 1:4.3. More specifically, the side of the main sealing portion 31 away from the groove 15 is recessed inward (ie, in the direction of the groove 15 ), that is, from the cross-section of the main sealing portion 31 , the main sealing portion 31 is far away from the groove. One side of the groove 15 is a concave arc. Therefore, in the radial direction of the protection element 30I, the radial minimum width L 3 of the main seal portion 31 is smaller than the radial length L g of the groove 15 .

雖然本創作以前述數個較佳實施例揭露如上,然其並非用以限定本創作。應該瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作些許之更動、替代與潤飾。Although the present invention is disclosed above with the aforementioned preferred embodiments, it is not intended to limit the present invention. It should be understood that any person with ordinary knowledge in the technical field can make some changes, substitutions and modifications without departing from the spirit and scope of the present creation.

1:電漿裝置 10:靜電吸附承盤 11:上部元件 111:上部元件下緣 12:下部元件 121:下部元件上緣 13:連結層 131:側緣 14:流體供應單元 141:工作流體 15:溝槽 20:延伸元件 120:製程電漿氣體 30A,30B,30C,30D,30E,30F,30G,30H,30I:保護元件 31:主密封部 311:第一邊角 312:第二邊角 32:第一外凸部 33:第二外凸部 34:延伸部 A:放大部分 H 1:軸向厚度 H 2:長度 H 3:長度 H g:垂直高度 L 1:徑向最大寬度 L 2:最大長度 L 3:徑向最小寬度 L g:長度 R:間距 W:晶圓 1: Plasma device 10: Electrostatic suction plate 11: Upper element 111: Lower edge of upper element 12: Lower element 121: Upper edge of lower element 13: Connection layer 131: Side edge 14: Fluid supply unit 141: Working fluid 15: Trench 20: Extension element 120: Process plasma gas 30A, 30B, 30C, 30D, 30E, 30F, 30G, 30H, 30I: Protection element 31: Main seal 311: First corner 312: Second corner 32 : first outer convex portion 33 : second outer convex portion 34 : extension portion A: enlarged portion H 1 : axial thickness H 2 : length H 3 : length H g : vertical height L 1 : radial maximum width L 2 : Maximum length L 3 : radial minimum width L g : length R: pitch W: wafer

圖1A係電漿裝置之示意圖; 圖1B係圖1A中的放大部分A之剖面示意圖; 圖2係第一實施例之電漿裝置之保護元件的俯視圖; 圖3A係第一實施例之電漿裝置之保護元件依圖2之B-B斷面線所得的斷面,且未塞入圖1B中的溝槽的示意圖; 圖3B係第一實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖4係圖1B中的溝槽設置有第二實施例之電漿裝置之保護元件的剖面示意圖; 圖5A係第三實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖5B係第三實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖6係第四實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖7A係第五實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖7B係第五實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖8A係第六實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖8B係第六實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖; 圖9係第七實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖10A係第八實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖10B係第八實施例之電漿裝置之保護元件設置於溝槽的示意圖; 圖11A係第九實施例之電漿裝置之保護元件未塞入溝槽的斷面示意圖; 圖11B係第九實施例之電漿裝置之保護元件完全塞入溝槽的斷面示意圖。 1A is a schematic diagram of a plasma device; FIG. 1B is a schematic cross-sectional view of the enlarged portion A in FIG. 1A; FIG. 2 is a top view of the protection element of the plasma device according to the first embodiment; 3A is a schematic diagram of a cross-section of the protection element of the plasma device according to the first embodiment according to the section line B-B in FIG. 2, and is not inserted into the groove in FIG. 1B; 3B is a schematic cross-sectional view of the protection element of the plasma device according to the first embodiment completely inserted into the groove; FIG. 4 is a schematic cross-sectional view of the groove in FIG. 1B provided with the protection element of the plasma device according to the second embodiment; 5A is a schematic cross-sectional view of the plasma device according to the third embodiment when the protection element is not inserted into the groove; 5B is a schematic cross-sectional view of the protection element of the plasma device according to the third embodiment completely inserted into the groove; FIG. 6 is a schematic cross-sectional view of the fourth embodiment of the plasma device where the protection element is not inserted into the groove; 7A is a schematic cross-sectional view of the plasma device according to the fifth embodiment when the protection element is not inserted into the groove; 7B is a schematic cross-sectional view of the protective element of the plasma device according to the fifth embodiment completely inserted into the groove; 8A is a schematic cross-sectional view of the plasma device according to the sixth embodiment when the protection element is not inserted into the groove; 8B is a schematic cross-sectional view of the protection element of the plasma device according to the sixth embodiment completely inserted into the groove; FIG. 9 is a schematic cross-sectional view of the plasma device of the seventh embodiment when the protection element is not inserted into the groove; FIG. 10A is a schematic cross-sectional view of the plasma device of the eighth embodiment when the protection element is not inserted into the groove; FIG. 10B is a schematic diagram illustrating that the protection element of the plasma device according to the eighth embodiment is disposed in the trench; 11A is a schematic cross-sectional view of the plasma device according to the ninth embodiment when the protection element is not inserted into the groove; 11B is a schematic cross-sectional view of the protection element of the plasma device according to the ninth embodiment completely inserted into the groove.

11:上部元件 11: Upper element

12:下部元件 12: Lower element

13:連結層 13: Link Layer

15:溝槽 15: Groove

30A:保護元件 30A: Protection element

31:主密封部 31: Main seal

311:第一邊角 311: First corner

312:第二邊角 312: Second corner

H1:軸向厚度 H 1 : Axial thickness

Hg:垂直高度 H g : vertical height

L1:徑向最大寬度 L 1 : radial maximum width

Lg:長度 L g : length

Claims (23)

一種電漿裝置之保護元件,其設置於一電漿裝置中;其中,該電漿裝置包括有一靜電吸附承盤和可更換的該保護元件; 該靜電吸附承盤包括一上部元件、一下部元件以及一連結層,該連結層連接該上部元件與該下部元件,並且於該連結層的一側緣和該上部元件的一部分下緣及該下部元件的一部分上緣共同形成一溝槽; 該保護元件具有一環形結構,其設置於該靜電吸附承盤的該溝槽中;該保護元件包括: 一主密封部,該主密封部朝向該溝槽的一側具有一第一邊角,該第一邊角為一倒角;該主密封部具有一徑向最大寬度和一軸向厚度,該軸向厚度係大於該溝槽的垂直高度,以及該徑向最大寬度與該軸向厚度的比例介於1:0.5至1:10。 A protection element of a plasma device, which is arranged in a plasma device; wherein, the plasma device comprises an electrostatic adsorption support plate and the replaceable protection element; The electrostatic adsorption holding plate includes an upper element, a lower element and a connecting layer, the connecting layer connects the upper element and the lower element, and a side edge of the connecting layer and a part of the lower edge of the upper element and the lower part A part of the upper edge of the element together forms a groove; The protection element has an annular structure, which is arranged in the groove of the electrostatic adsorption support plate; the protection element includes: a main sealing part, the side of the main sealing part facing the groove has a first corner, the first corner is a chamfer; the main sealing part has a radial maximum width and an axial thickness, the The axial thickness is greater than the vertical height of the groove, and the ratio of the radial maximum width to the axial thickness is between 1:0.5 and 1:10. 如請求項1所述之電漿裝置之保護元件,其中,該主密封部朝向該溝槽的一側更具有一第二邊角,該第二邊角為一倒角。The protection element of the plasma device according to claim 1, wherein the side of the main sealing portion facing the groove further has a second corner, and the second corner is a chamfered corner. 如請求項1所述之電漿裝置之保護元件,其中,該主密封部的斷面呈一梯形,所述梯形具有相互平行的一上底邊和一下底邊以及連接該上底邊和該下底邊的相對兩腰線;其中,該上底邊係該主密封部朝向該溝槽的一側所形成,該上底邊的長度大於該下底邊的長度,該上底邊的長度係大於該溝槽的垂直高度,該下底邊的長度係大於或等於該溝槽的垂直高度。The protection element for a plasma device according to claim 1, wherein the cross section of the main sealing portion is a trapezoid, and the trapezoid has an upper bottom edge and a lower bottom edge that are parallel to each other and connect the upper bottom edge and the The opposite waistlines of the lower bottom edge; wherein, the upper bottom edge is formed by the side of the main sealing portion facing the groove, the length of the upper bottom edge is greater than the length of the lower bottom edge, and the length of the upper bottom edge is greater than the vertical height of the groove, and the length of the lower base is greater than or equal to the vertical height of the groove. 如請求項1所述之電漿裝置之保護元件,其中,該主密封部的斷面呈一梯形,所述梯形具有相互平行的一上底邊和一下底邊以及連接該上底邊和該下底邊的相對兩腰線;其中,該上底邊係該主密封部朝向該溝槽的一側所形成,該上底邊的長度小於該下底邊的長度,該上底邊的長度係大於或等於該溝槽的垂直高度,該下底邊的長度係大於該溝槽的垂直高度。The protection element for a plasma device according to claim 1, wherein the cross section of the main sealing portion is a trapezoid, and the trapezoid has an upper bottom edge and a lower bottom edge that are parallel to each other and connect the upper bottom edge and the The two opposite waistlines of the lower bottom edge; wherein, the upper bottom edge is formed by the side of the main sealing portion facing the groove, the length of the upper bottom edge is less than the length of the lower bottom edge, and the length of the upper bottom edge is greater than or equal to the vertical height of the groove, and the length of the lower base is greater than the vertical height of the groove. 如請求項1所述之電漿裝置之保護元件,其中,該保護元件更包括一第一外凸部,該第一外凸部與該主密封部的上側相連。The protection element for a plasma device as claimed in claim 1, wherein the protection element further comprises a first protruding portion, and the first protruding portion is connected to the upper side of the main sealing portion. 如請求項5所述之電漿裝置之保護元件,其中,該保護元件更包括一第二外凸部,該第二外凸部與該主密封部的下側相連,並與該第一外凸部位於相對側。The protection element of a plasma device as claimed in claim 5, wherein the protection element further comprises a second outer convex portion, the second outer convex portion is connected to the lower side of the main sealing portion, and is connected to the first outer convex portion. The convex portion is on the opposite side. 如請求項2所述之電漿裝置之保護元件,其中,該保護元件更包括一第一外凸部;該第一外凸部與該主密封部的上側相連。The protection element of a plasma device as claimed in claim 2, wherein the protection element further comprises a first convex portion; the first convex portion is connected to the upper side of the main sealing portion. 如請求項7所述之電漿裝置之保護元件,其中,該保護元件更包括一第二外凸部;該第二外凸部與該主密封部的下側相連,並與該第一外凸部位於相對側。The protection element of a plasma device according to claim 7, wherein the protection element further comprises a second outer convex portion; the second outer convex portion is connected to the lower side of the main sealing portion, and is connected to the first outer convex portion. The convex portion is on the opposite side. 如請求項5至8中任一項所述之電漿裝置之保護元件,其中,該第一外凸部為單波峰型式。The protection element for a plasma device according to any one of claims 5 to 8, wherein the first convex portion is of a single wave peak type. 如請求項5至8中任一項所述之電漿裝置之保護元件,其中,該第一外凸部為多重波峰型式。The protection element of a plasma device according to any one of claims 5 to 8, wherein the first convex portion is in the form of multiple peaks. 如請求項6或8所述之電漿裝置之保護元件,其中,該第二外凸部為單波峰型式。The protection element for a plasma device as claimed in claim 6 or 8, wherein the second convex portion is a single wave peak type. 如請求項6或8所述之電漿裝置之保護元件,其中,該第二外凸部為多重波峰型式。The protection element for a plasma device according to claim 6 or 8, wherein the second convex portion is in the form of multiple peaks. 如請求項11所述之電漿裝置之保護元件,其中,該第一外凸部為單波峰型式。The protection element for a plasma device as claimed in claim 11, wherein the first convex portion is a single wave peak type. 如請求項11所述之電漿裝置之保護元件,其中,該第一外凸部為多重波峰型式。The protection element for a plasma device according to claim 11, wherein the first convex portion is in the form of multiple peaks. 如請求項12所述之電漿裝置之保護元件,其中,該第一外凸部為單波峰型式。The protection element for a plasma device as claimed in claim 12, wherein the first convex portion is a single wave peak type. 如請求項12所述之電漿裝置之保護元件,其中,該第一外凸部為多重波峰型式。The protection element for a plasma device as claimed in claim 12, wherein the first convex portion is in the form of multiple peaks. 如請求項1所述之電漿裝置之保護元件,其中,該電漿裝置更包括一延伸元件,該延伸元件環繞該靜電吸附承盤的該上部元件和該下部元件,且該延伸元件的內側與該下部元件的外側維持一間距;其中,該保護元件更具有一延伸部,該延伸部係由該主密封部朝向遠離該溝槽方向的一側凸出成型且位於所述間距中;該延伸部於徑向方向上的最大長度小於或等於所述間距的長度。The protection element for a plasma device as claimed in claim 1, wherein the plasma device further comprises an extension element, the extension element surrounds the upper element and the lower element of the electrostatic adsorption tray, and the inner side of the extension element maintaining a distance with the outer side of the lower element; wherein, the protection element further has an extension part, the extension part is protruded from the main sealing part toward the side away from the groove direction and located in the distance; the The maximum length of the extension in the radial direction is less than or equal to the length of the spacing. 如請求項17所述之電漿裝置之保護元件,其中,該保護元件更包括一第一外凸部,該第一外凸部與該主密封部的上側相連;該第一外凸部為單波峰型式或多重波峰型式。The protection element for a plasma device as claimed in claim 17, wherein the protection element further comprises a first convex portion, the first convex portion is connected to the upper side of the main sealing portion; the first convex portion is Single peak pattern or multiple peak pattern. 如請求項18所述之電漿裝置之保護元件,其中,該保護元件更包括一第二外凸部,該第二外凸部與該主密封部的下側相連,並與該第一外凸部位於相對側;該第二外凸部為單波峰型式或多重波峰型式。The protection element for a plasma device as claimed in claim 18, wherein the protection element further comprises a second outer convex portion, the second outer convex portion is connected to the lower side of the main sealing portion, and is connected to the first outer convex portion. The convex portion is located on the opposite side; the second outer convex portion is in the form of a single crest or a form of multiple crests. 如請求項1至8中任一項所述之電漿裝置之保護元件,其中,該主密封部的徑向最大寬度與該溝槽於徑向方向的長度之比例為1:1.05至1:1.2。The protection element for a plasma device according to any one of claims 1 to 8, wherein the ratio of the radial maximum width of the main sealing portion to the length of the groove in the radial direction is 1:1.05 to 1: 1.2. 如請求項1所述之電漿裝置之保護元件,其中,該主密封部遠離該溝槽的一側向內凹陷;該主密封部具有一徑向最小寬度,該徑向最小寬度小於該溝槽於徑向方向的長度。The protection element for a plasma device as claimed in claim 1, wherein a side of the main sealing portion away from the groove is inwardly recessed; the main sealing portion has a radial minimum width that is smaller than that of the groove The length of the groove in the radial direction. 如請求項21所述之電漿裝置之保護元件,其中,該保護元件更包括一第一外凸部,該第一外凸部與該主密封部的上側相連;該第一外凸部為單波峰型式或多重波峰型式。The protection element for a plasma device as claimed in claim 21, wherein the protection element further comprises a first protruding portion, the first protruding portion is connected to the upper side of the main sealing portion; the first protruding portion is Single peak pattern or multiple peak pattern. 如請求項22所述之電漿裝置之保護元件,其中,該保護元件更包括一第二外凸部,該第二外凸部與該主密封部的下側相連,並與該第一外凸部位於相對側;該第二外凸部為單波峰型式或多重波峰型式。The protection element for a plasma device as claimed in claim 22, wherein the protection element further comprises a second outer convex portion, the second outer convex portion is connected to the lower side of the main sealing portion, and is connected to the first outer convex portion. The convex portion is located on the opposite side; the second outer convex portion is in the form of a single crest or a form of multiple crests.
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