TWM622073U - Dual temperature control system - Google Patents

Abstract

A dual temperature control system for controlling the temperature of at least one chemical used in a semiconductor process conducted in a clean room includes a feeding device, a sensing device, and a temperature control device. The feeding device is used for storing the at least one chemical, and has a central feeding unit located in the clean room and an internal feeding unit disposed in the clean room, and the sensing device is used for measuring the passing of the semiconductor The temperature of the chemical in the process and the temperature of the chemical stored in the internal supply unit or derived from the internal supply unit, the temperature control device is used to control the central supply unit to supply to the at least one of the internal supply units Chemical temperature, and controlling the temperature of the at least one chemical supplied by the internal supply unit to the semiconductor process to have the predetermined process temperature required by the semiconductor process.

Description

Dual temperature control system

The present invention relates to a temperature control system, especially a dual temperature control system for controlling chemicals used in semiconductor manufacturing processes.

As semiconductor process technology develops more and more rapidly and the build-up density is getting higher and higher, confirm the process stability of each process and the precision and stability of the critical dimensions of the build-up circuit images generated by each process to ensure Accurate control of the process results to ensure the yield and production efficiency of the subsequent semiconductor devices is a relatively important factor in semiconductor process management.

Among them, different chemicals used in different processes (such as etching, chemical mechanical polishing, cleaning, etc.), because the temperature will affect the results of the chemical on the process, for example, chemical mechanical polishing (Chemical Mechanical Planarization, hereinafter referred to as CMP) For example, since the semiconductor element and the polishing slurry for grinding will generate heat due to friction during the polishing process, or because the polishing slurry and the semiconductor element have an endothermic or exothermic reaction, the polishing slurry is generated during the manufacturing process. temperature changes, thereby affecting the instability of the polishing rate, and it is easy to make the semiconductor element The degree of flatness of the piece deviates from expectations. Therefore, how to effectively control the temperature of chemicals in the process to maintain process stability is also one of the important factors in semiconductor process management.

Therefore, it is an object of the present invention to provide a dual temperature control system for controlling the temperature of at least one chemical used in a semiconductor process conducted in a clean room.

Therefore, the novel dual temperature control system includes a feeding device, a sensing device, and a temperature control device.

The feeding device is used for storing and supplying the at least one chemical for use in the semiconductor process, and has a central feeding unit located outside the clean room, and an internal feeding unit disposed in the clean room. The central feeding unit is located in the clean room. A feed unit communicates with the internal feed unit to provide the at least one chemical from the central feed unit to the internal feed unit.

The sensing device has a first sensing unit and a second sensing unit, the first sensing unit is used to measure the temperature of the at least one chemical through the semiconductor process to obtain a first temperature, the second The sensing unit is used for sensing the temperature of the at least one chemical stored in the internal supply unit or derived from the internal supply unit to obtain a second temperature.

The temperature control device has an outer temperature control unit and an inner temperature control unit, The outer temperature control unit is used to control the temperature of the at least one chemical supplied by the central supply unit to the inner supply unit, so that the at least one chemical can be supplied to the inner supply unit at a pre-adjusted temperature, wherein , the pre-adjusted temperature is calculated according to the first temperature and the predetermined process temperature of the semiconductor process, and the internal temperature control unit can adjust the supply of the internal supply unit according to the second temperature and the predetermined process temperature of the semiconductor process to the temperature of the at least one chemical used in the semiconductor process so that the at least one chemical has the predetermined process temperature required by the semiconductor process.

The function of the present invention is: by measuring the temperature of the chemical after the semiconductor process and the temperature of the chemical stored in the internal supply unit, the first temperature and the second temperature are obtained, and according to the first temperature and the temperature of the semiconductor process Predetermined process temperature, the chemical can be supplied to the internal supply unit at a pre-adjusted temperature in advance, and then according to the second temperature and the predetermined process temperature of the semiconductor process, the internal supply unit is adjusted to be supplied to the semiconductor process for use The temperature of the chemical can be more effectively controlled by using dual temperature control, and the temperature of the chemical used in the semiconductor process can be controlled, and the stability of the process can be maintained.

100: Clean Room

1: chemical mechanical grinding machine

11: Pedestal

111: Grinding pad

12: Fixtures

121: Fixed turntable

13: Dressing device

131: Diamond Disc

132: Rotary Fixture

W: Semiconductor element

200: Dual temperature control system

2: Feeding device

21: Central feeding unit

211: Central storage tank

212: External liquid supply pipeline

22: Internal feeding unit

221: Buffer tank

222: output pipeline

3: Sensing device

31: The first sensing unit

32: The second sensing unit

4: Temperature control device

41: Processing unit

42: External temperature control unit

421: Thermostat

43: Internal temperature control unit

431: Temperature regulator

432: Flow Controller

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein: FIG. 1 is a schematic diagram illustrating a first embodiment of the dual temperature control system of the present invention; FIG. 2 is a schematic diagram for explaining FIG. 1 ; and FIG. 3 is a schematic diagram for explaining a second embodiment of the novel dual temperature control system.

The related technical content, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the drawings. In addition, it should be noted that the drawings of the present invention only show the relative structure and/or positional relationship among the elements, and are not related to the actual size of each element.

In the semiconductor process generally carried out in a clean room, since the clean room is generally a constant temperature environment, and the indoor environment temperature control in the clean room is poor, the temperature of the chemicals stored in the clean room is transported to the clean room through the conveying pipeline. The process used in the indoor semiconductor process is easily affected by the ambient temperature and changes greatly, which affects the process temperature. Therefore, the novel dual temperature control system can be used to control the temperature of chemicals used in the semiconductor process.

Among them, the semiconductor process can be chemical mechanical polishing, etching, diffusion, thin film, yellow light and other processes, and the chemical can be polishing slurry, sulfuric acid, phosphoric acid, hydrogen peroxide, deionized water, ammonia water, or developer ( For example: tetramethylammonium hydroxide (TMHA), and these chemicals may be one or more.

In the embodiment of the present invention, the semiconductor process is used in a clean room 100, a chemical mechanical polishing (CMP) process for planarizing a semiconductor element W, the chemical used is a polishing slurry (slurry), and at the same time there are multiple chemical mechanical polishing machines 1 to perform the chemical mechanical polishing (CMP) process. The mechanical grinding process is taken as an example.

Each chemical mechanical polishing machine 1 includes a base 11 , a fixing device 12 , and a dressing device 13 .

The base 11 has a polishing pad 111 located on the top surface, which is rotatable and can be used to carry the polishing slurry. The fixing device 12 is disposed above the polishing pad 111 and has a fixing turntable 121 for fixing at least one semiconductor element W (only one semiconductor element W is shown in FIG. 2 ), and the surface to be polished of the at least one semiconductor element W is The form facing the polishing pad 111 is located above the polishing pad 111 , and can drive the at least one semiconductor element W to rotate relative to the polishing pad 111 . The trimming device 13 has a diamond plate 131 and a rotating fixing frame 132 for fixing the diamond plate 131 and driving the diamond plate 131 to rotate. The diamond disc 131 can be used to condition the polishing pad 111 to maintain the efficiency of the polishing pad 111 during the polishing process. Since the above-mentioned detailed structures and relative positional relationships of the components of the polishing machine 1 are well known in general chemical mechanical polishing systems, they will not be further described here.

The novel dual temperature control system is used to control the temperature of the polishing slurry introduced into the chemical mechanical polishing machines 1 .

1 and 2 , the first embodiment of the dual temperature control system 200 of the present invention includes a feeding device 2 , a sensing device 3 , and a temperature control device 4 . Among them, FIG. 1 is a schematic diagram showing the use environment of the dual temperature control system 200, and FIG. 2 is a schematic diagram showing the use environment of the dual temperature control system 200. The dual temperature control system 200 and one of the chemical mechanical grinding machines 1 are shown.

The feeding device 2 is used for storing and supplying chemicals (polishing slurry) used in the chemical mechanical polishing process for use in the chemical mechanical polishing process. The feeding device 2 has a central feeding unit 21 located outside the clean room 100, and an internal feeding unit 22 disposed in the clean room 100. The central feeding unit 21 and the internal feeding unit 22 communication to provide the chemical from the central supply unit 21 to the internal supply unit 22 .

Specifically, the central supply unit 21 has a central storage tank 211 for storing the chemical, and an external liquid supply pipeline 212 for connecting the central storage tank 211 and the internal supply unit 22 . The internal supply unit 22 has a buffer storage tank 221 for storing the chemical introduced from the central storage tank 211 , and a plurality of output pipelines 222 , and one end of the output pipelines 222 communicates with the buffer storage tank 221 , the other end is used for exporting the chemical from the buffer storage tank 221 to the corresponding chemical mechanical polishing machine 1 for use in the chemical mechanical polishing process, and both the central storage tank 211 and the buffer storage tank 221 can be used Keep the abrasive slurry stored in it at a predetermined temperature.

The sensing device 3 has a first sensing unit 31 and a second sensing unit 32. The first sensing unit 31 is used to measure the temperature of the chemical through the semiconductor process to obtain a first temperature, The second sensing unit 32 can be used to sense the temperature of the chemical stored in the internal supply unit 22 to obtain a second temperature.

In this embodiment, the first sensing unit 31 has corresponding to each The chemical mechanical polishing machine 1 is provided with temperature sensors, which can be respectively used to measure the polishing slurry downstream of the polishing pad 111 after the chemical mechanical polishing process (ie the polishing slurry carried out by the polishing pad 111 after polishing). ) temperature, or measure the temperature of the abrasive slurry recovered after the chemical mechanical polishing process to obtain the first temperature; the second sensing unit 32 has a temperature sensor corresponding to the buffer storage tank 221 for The temperature of the chemical stored in the internal supply unit 22 is sensed to obtain the second temperature. The temperature sensors of the first and second sensing units 31 and 32 may be infrared sensors, thermocouples, or the like.

The temperature control device 4 has a processing unit 41 , an outer temperature control unit 42 and an inner temperature control unit 43 .

The processing unit 41 is signal-connected to the sensing device 3 , the external temperature control unit 42 and the internal temperature control unit 43 respectively, and can be used to receive the first temperature and the second temperature sensed by the sensing device 3 , and according to the first temperature and the predetermined process temperature of the semiconductor process, or the first temperature, the second temperature and the predetermined process temperature of the semiconductor process to obtain a pre-adjusted temperature signal; and can be based on the second temperature and The predetermined process temperature relationship of the semiconductor process is used to obtain a process temperature adjustment signal. The outer temperature control unit 42 and the inner temperature control unit 43 can respectively receive the pre-adjusted temperature signal and the process temperature adjustment signal and adjust the output temperature of the chemical accordingly, so that they have the pre-adjusted temperature and the predetermined process, respectively temperature. The pre-adjusted temperature is between the lower limit and the upper limit of the predetermined process temperatures of the chemical mechanical polishing machines 1 , and the predetermined process temperature is the process temperature required by each chemical mechanical polishing machine 1 .

Specifically, the processing unit 41 may be a computer with a general computing and processing function, or may have computing and a display that simultaneously has display and/or input.

The external temperature control unit 42 has a temperature regulator 421 disposed on the external liquid supply pipeline 212 . The temperature regulator 421 can be a heat exchanger, etc., for receiving the pre-adjusted temperature signal, and adjusting the temperature of the chemical supplied from the central supply unit 21 to the internal supply unit 22 according to the pre-adjusted temperature signal, So that the chemical can be supplied to the internal supply unit 22 at a pre-adjusted temperature. In this embodiment, the temperature regulator 421 is used to control the temperature of the abrasive slurry supplied from the central storage tank 211 to the internal supply unit 22 to the pre-adjusted temperature.

The internal temperature control unit 43 has a plurality of temperature regulators 431. The temperature regulators 431 may be heat exchangers and other temperature regulating structures, respectively disposed in the output pipelines 222, and can receive each corresponding chemical machine The process temperature adjustment signal of the grinding machine table 1, and according to the process temperature adjustment signal, the temperature of the grinding slurry input from the central storage tank 211 to the buffer storage tank 221 and having the pre-adjusted temperature is further controlled, so that the buffer storage The temperature of the polishing slurry output from the tank 221 through each output pipeline 222 may correspond to the process temperature required by each chemical mechanical polishing machine 1 .

It should be noted that the aforementioned output pipeline 222 of the internal supply unit 22 is set corresponding to the number of machines required to execute the semiconductor process. For the mechanical grinding machine 1), there are multiple output pipelines 222 corresponding to the same machine; if there is only a single machine, the output pipeline 222 is one. Other In addition, the chemicals used in the semiconductor process can also be single or multiple. When supplying multiple chemicals, multiple central storage tanks 211 can be set up to store these different chemicals respectively, and the materials can be supplied through the same structure and temperature control method as the aforementioned single chemical supply, so that different chemicals can be stored at the same time. Chemicals are supplied with temperature control.

In addition, the predetermined process temperature of the semiconductor process is determined according to the machine for executing the semiconductor process/or the semiconductor process. The machine can be single or multiple. When there are multiple machines, each machine The predetermined process temperature required by the station may be the same or different depending on requirements. For example, the chemical mechanical polishing machines 1 can be used for chemical mechanical polishing of the same or different semiconductor elements W, and the predetermined process temperature required by each chemical mechanical polishing machine 1 for different semiconductor elements W can be the same or different. The pre-adjusted temperature is calculated according to the first temperature and a single predetermined process temperature or different predetermined process temperatures.

The dual temperature control system 200 of the present invention obtains a pre-adjusted temperature suitable for each process by calculating the first temperature sensed by the sensing unit 3 and the predetermined process temperature of the chemical mechanical polishing machines 1 . Therefore, The abrasive slurry introduced from the central storage tank 211 to the buffer storage tank 221 can be adjusted to the pre-adjusted temperature through the temperature regulator 421 of the external temperature control unit 42, and the conventional external liquid supply pipeline can be avoided. The process of transporting chemicals to the storage tank of the clean room has the disadvantage that it is easily affected by the environmental temperature and changes greatly. In addition, the temperature of the abrasive slurry with the pre-adjusted temperature after entering the buffer storage tank 221 and the abrasive slurry stored in the buffer storage tank 221 can be closer to the predetermined temperature Therefore, when the temperature of the grinding material output from the buffer storage tank 221 is adjusted by the temperature regulator 431 of the internal temperature control unit 43, it can be adjusted more easily. It is easier to maintain the temperature stability of process chemicals.

Referring to FIG. 3 , a second embodiment of the present invention has substantially the same structure and relative position as the first embodiment, except that the internal feeding unit 22 may have a plurality of buffer storage tanks 221 (two in FIG. 3 For example), and a plurality of output pipelines 222, the output pipelines 222 can be in a Y-shaped tubular shape, one end can be communicated with the two buffer storage tanks 221 at the same time, and the other end can be used for transferring from the two buffer storage tanks 221. The polishing slurry discharged from the tank 221 is guided to the corresponding chemical mechanical polishing machine table 1 . The central supply unit 21 has a plurality of external liquid supply pipelines 212 respectively communicating with the central storage tank 211 and the buffer storage tanks 221 .

The temperature regulators 421 of the external temperature control unit 42 can be respectively disposed in the two external liquid supply pipelines 212 to respectively control the slurry supplied to the two buffer storage tanks 221 via the external liquid supply pipelines 212 . The feed can have 2 different preconditioning temperatures. Wherein, the two pre-conditioning temperatures are between the upper and lower limit temperatures of the predetermined process temperatures of the chemical mechanical polishing machines 1, for example, one of the pre-conditioning temperatures may be close to the upper limit temperature of the predetermined process temperatures, Another preconditioning temperature may be a lower limit temperature close to the predetermined process temperatures.

The internal temperature control unit 43 has a plurality of temperature regulators 431 respectively disposed on the output pipes 222, and a plurality of flow controllers 432 for controlling the flow rate of the abrasive slurry exported from the buffer storage tanks 221, and The temperature regulator 431 is set in the flow downstream of volume controller 432 . Specifically, the flow controllers 432 of the internal temperature control unit 43 can be disposed at the outlet of each output pipeline 222 that communicates with the corresponding buffer storage tanks 221 to control the flow rate of the abrasive slurry at different temperatures. The flow rate can make the grinding slurries of different temperatures mixed to form a temperature closer to the temperature required by the corresponding chemical mechanical polishing table 1. After that, the temperature regulator located downstream of the flow controllers 432 can be further used. 431 further adjusts the temperature of the abrasive slurry, so that the exported abrasive slurry can more easily reach the desired predetermined process temperature.

Through the external temperature control unit 42, the grinding slurries with different pre-adjusted temperatures are introduced, and the flow controllers 432 of the internal temperature control unit 43 are used to mix the grinding slurries with different temperatures in advance to form a better temperature than the desired temperature. For similar polishing slurries, the temperature of the polishing slurry can be more easily adjusted by the temperature adjuster 431, and the temperature of the chemicals required for the introduction of the process can be more easily controlled, thereby maintaining the process stability.

In summary, the dual temperature control system 200 of the present invention can use the sensing unit 3 to measure the temperature (first temperature) of the chemical (polishing slurry) in the semiconductor process, according to the first temperature and the The predetermined process temperature of the chemical mechanical polishing machine 1 is calculated to obtain a pre-adjusted temperature suitable for each process. Therefore, the grinding process from the central storage tank 211 to the buffer storage tank 221 can be conducted through the external temperature control unit 42 The slurry is adjusted to the pre-adjusted temperature, which can avoid the conventional process of transporting chemicals stored in the clean room to the storage tank in the clean room through pipelines, which is easily affected by the environmental temperature of the clean room and changes greatly. . In addition, the temperature of the polishing slurry with this pre-adjusted temperature can be closer The predetermined process temperature, therefore, when the temperature of the grinding material output from the buffer storage tank 221 is adjusted by the temperature regulator 431 of the internal temperature control unit 43, it is easier to adjust, and it is easier to maintain the process chemicals. Temperature stability, so it can indeed achieve the purpose of cost new.

However, the above are only examples of the present invention, which should not limit the scope of implementation of the present invention. Any simple equivalent changes and modifications made according to the scope of the patent application for this new model and the contents of the patent specification are still within the scope of the present invention. within the scope of this patent.

1: chemical mechanical grinding machine

11: Pedestal

111: Grinding pad

12: Fixtures

121: Fixed turntable

13: Dressing device

131: Diamond Disc

132: Rotary Fixture

W: Semiconductor element

21: Central feeding unit

211: Central storage tank

212: External liquid supply pipeline

22: Internal feeding unit

221: Buffer tank

222: output pipeline

3: Sensing device

31: The first sensing unit

32: The second sensing unit

4: Temperature control device

41: Processing unit

42: External temperature control unit

421: Thermostat

43: Internal temperature control unit

431: Temperature regulator

Claims (13)

A dual temperature control system for controlling the temperature of at least one chemical used in a semiconductor process introduced into a clean room, comprising: a feeding device for storing and supplying the at least one chemical for the semiconductor process use, there is a central feeding unit located in the clean room, and an internal feeding unit arranged in the clean room, the central feeding unit is communicated with the internal feeding unit, so as to supply the at least one chemical from the The central feeding unit is provided to the internal feeding unit; a sensing device has a first sensing unit and a second sensing unit, the first sensing unit is used for measuring the at least a chemical temperature to obtain a first temperature, the second sensing unit is used for sensing the temperature of the at least one chemical stored in the internal supply unit or derived from the internal supply unit to obtain a second temperature ; and a temperature control device having an outer temperature control unit and an inner temperature control unit, the outer temperature control unit being used to control the temperature of the at least one chemical supplied by the central feeding unit to the inner feeding unit, to The at least one chemical can be supplied to the internal supply unit at a pre-adjusted temperature, wherein the pre-adjusted temperature is calculated according to the first temperature and the predetermined process temperature of the semiconductor process, and the internal temperature control unit can be based on The second temperature and the predetermined process temperature of the semiconductor process adjust the temperature of the at least one chemical supplied by the internal supply unit to the semiconductor process, so that the at least one chemical has the required amount of the semiconductor process. Predetermined process temperature. The dual temperature control system of claim 1, wherein the pre-adjusted temperature is calculated according to the first temperature and the predetermined process temperature of the semiconductor process and the pre-adjusted temperature is between the lower limit and the upper limit of the predetermined process temperature of the semiconductor process. The dual temperature control system of claim 1, wherein the central supply unit has at least one central storage tank for storing the at least one chemical, and at least one for connecting the at least one central storage tank with the interior The external liquid supply pipeline of the feeding unit, the external temperature control unit has at least one temperature regulator, and the at least one temperature regulator is arranged in the at least one external liquid supply pipeline to control the supply of the at least one central storage tank to the Chemical temperature of the internal feed unit to this pre-adjusted temperature. The dual temperature control system of claim 3, wherein the internal supply unit has at least one buffer storage tank for storing the at least one chemical, and at least one output pipeline, and the at least one external liquid supply pipeline is connected to The at least one buffer storage tank is in communication, one end of the at least one output pipeline is in communication with the at least one buffer storage tank, and the other end is used to export the at least one chemical from the at least one buffer storage tank for use in the semiconductor process . The dual temperature control system of claim 4, wherein the inner temperature control unit has a temperature regulator corresponding to the at least one output pipeline for controlling the temperature of the chemical output through the at least one output pipeline . The dual temperature control system according to claim 5, wherein the internal supply unit has a buffer storage tank and a plurality of output pipelines, and the internal temperature control unit has a plurality of temperature corresponding to the output pipelines A regulator, one end of each output pipeline is communicated with the buffer storage tank, and the other end is used to export the chemical from the buffer storage tank, and each temperature regulator is used to control the chemical output from a corresponding output pipeline temperature to provide processes with different pre- It is used in a semiconductor process, wherein the pre-adjusted temperature is between the lower limit and the upper limit of all different predetermined process temperatures of the semiconductor process. The dual temperature control system according to claim 5, wherein the internal supply unit has a plurality of buffer storage tanks, and the central supply unit has a plurality of external supplies for connecting the central storage tank and the buffer storage tanks Liquid pipelines, the external temperature control unit has a plurality of temperature regulators respectively disposed in the external liquid supply pipelines, so as to control the at least one chemical supplied from the central storage tank to the buffer storage tanks to have at least Two different temperatures, the inner temperature control unit has a plurality of temperature regulators corresponding to the output pipelines, and one end of each external liquid supply pipeline and at least two of the buffer storage tanks store a Buffer tanks for chemicals at different temperatures communicate. The dual temperature control system according to claim 7, wherein the inner temperature control unit further has a plurality of flow controllers, and the flow controllers are respectively arranged on the output pipelines to control the buffer storage tanks respectively. The flow of the chemical supplied to the corresponding output line. The dual temperature control system as claimed in claim 8, wherein the inner temperature control unit has a plurality of temperature regulators, and each temperature regulator is disposed in the corresponding output pipeline to control the output from the buffer storage tanks from the chemical temperature to the predetermined process temperature for use in the semiconductor process. The dual temperature control system of claim 3, wherein the temperature control device further comprises a processing unit, and the processing unit is signal-connected to the sensing device, the outer temperature control unit and the inner temperature control unit respectively, and the processing unit The unit can receive the temperature sensed by the sensing device, and obtain a pre-adjusted temperature signal and a process temperature adjustment signal accordingly, the outer temperature control unit and the inner temperature control unit can be connected to The pre-adjustment temperature signal and the process temperature adjustment signal are received and the output temperature of the chemical is adjusted accordingly, so that it has the pre-adjustment temperature and the predetermined process temperature respectively. The dual temperature control system of claim 1, wherein the semiconductor process is a chemical mechanical polishing process, and there is at least one polishing machine located in the clean room for performing the semiconductor process, and the chemical supply device stores chemicals is a polishing slurry used by the at least one grinding machine table, and the first temperature result is to measure the temperature of the polishing slurry downstream of a polishing pad of the at least one grinding machine table. The dual temperature control system of claim 11, wherein the chemical mechanical polishing process includes a plurality of polishing machines located in the clean room for performing the semiconductor process, and the polishing machines have at least two different types of polishing machines. a predetermined process temperature, the pre-adjusted temperature is calculated according to the first temperature and the predetermined process temperature of the grinding machines, and the pre-adjusted temperature is between the lower limit and the upper limit of all the predetermined process temperatures of the grinding machines between. The dual temperature control system of claim 12, wherein the temperature control device further comprises a processing unit, and the processing unit is signal-connected to the sensing device, the outer temperature control unit, and the inner temperature control unit, respectively. The unit can receive the temperature sensed by the sensing device, calculate and obtain a pre-adjusted temperature signal according to the first temperature and the predetermined process temperature of the grinding machines, and obtain a pre-adjusted temperature signal according to the second temperature and the temperature of the grinding machines. The predetermined process temperature obtains a process temperature adjustment signal, and the outer temperature control unit and the inner temperature control unit can adjust the output temperature of the chemical after receiving the process temperature control signal and the pre-adjustment temperature signal, so that they respectively have The pre-adjusted temperature and the corresponding predetermined process temperature of the grinding machine table.

Images