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TWM618739U - Wafer separation device - Google Patents

Wafer separation device Download PDF

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Publication number
TWM618739U
TWM618739U TW110208577U TW110208577U TWM618739U TW M618739 U TWM618739 U TW M618739U TW 110208577 U TW110208577 U TW 110208577U TW 110208577 U TW110208577 U TW 110208577U TW M618739 U TWM618739 U TW M618739U
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Taiwan
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wafer
grooves
top surface
separation device
temporary substrate
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TW110208577U
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Chinese (zh)
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祁幼銘
黃國鈞
陳柏僥
莊忠憲
翁英峰
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宏捷科技股份有限公司
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Priority to TW110208577U priority Critical patent/TWM618739U/en
Publication of TWM618739U publication Critical patent/TWM618739U/en

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Abstract

一種晶圓分離裝置,適用於將一晶圓自所接合的一暫時基板分離,該裝置包含一承載盤、多道溝槽,及多個吸孔。該承載盤供用以放置待分離的該暫時基板與該晶圓,並具有一頂面。每一溝槽是由二自該承載盤的頂面向下延伸形成的側壁,及一連接該二側壁遠離該頂面的一端的底壁共同定義形成,且每一溝槽的側壁與該頂面的接合處成導角。該等吸孔分布於該等溝槽的底壁,而可用於對相應的該溝槽進行抽氣。當待分離的晶圓固設於該承載盤時,由於該等溝槽與該頂面之接合處成導角,而能避免因接合處的角度過於尖銳,而有刮傷該晶圓的情形發生。A wafer separation device is suitable for separating a wafer from a temporary substrate to which it is joined. The device includes a carrier plate, a plurality of grooves, and a plurality of suction holes. The carrier tray is used to place the temporary substrate and the wafer to be separated, and has a top surface. Each groove is formed by two side walls extending downward from the top surface of the carrier plate and a bottom wall connecting the two side walls away from the top surface. The side walls of each groove and the top surface are defined together. The joint is at a lead angle. The suction holes are distributed on the bottom walls of the grooves, and can be used to pump air to the corresponding grooves. When the wafer to be separated is fixed on the carrier tray, since the grooves and the joints of the top surface form a lead angle, it can avoid the situation of scratching the wafer due to the excessively sharp angles of the joints happen.

Description

晶圓分離裝置Wafer separation device

本新型是有關於一種分離裝置,特別是指一種適用於半導體晶圓的分離裝置。The present invention relates to a separation device, in particular to a separation device suitable for semiconductor wafers.

在半導體產業中,晶圓逐漸往體積微型化的方向發展,目前而言,已可將晶圓薄型化至數百微米到數十微米。為了確保該晶圓在製程中擁有足夠的機械支撐力,同時避免在製程中發生翹曲或變形,或是基於製程過程的需求,業界會以一暫時基板貼合於該晶圓的表面,再於製程結束後將該暫時性基板自該晶圓分離。In the semiconductor industry, wafers are gradually developing in the direction of volume miniaturization. At present, wafers can be thinned to hundreds of microns to tens of microns. In order to ensure that the wafer has sufficient mechanical support during the manufacturing process, while avoiding warping or deformation during the manufacturing process, or based on the requirements of the manufacturing process, the industry will attach a temporary substrate to the surface of the wafer, and then After the process is finished, the temporary substrate is separated from the wafer.

參閱圖1,在將一晶圓101自一暫時基板102上分離的過程中,通常是將一待分離物(即以晶面貼合於該暫時基板102上的晶圓101)以該晶圓101的晶背方向設置於一承載盤103(chuck)上。該承載盤103表面形成有多道溝槽104,且該等溝槽104底部具有多個吸孔(圖未示)。使用時,利用該等吸孔對外抽氣以令該等溝槽104的內部空間形成負壓狀態,而可將該晶圓101吸附固設於該承載盤103上。由於一般情況下該晶圓101與該暫時基板102是利用是以熔點高於95℃的蠟作為接合層(圖未示)接合。因此,後續會在一可令該接合用的蠟軟化或融熔的溫度條件(如150℃)下,再施加一側向推力F於該暫時基板102,以將該暫時基板102平移推出而與該晶圓101分離。然而,由於該承載盤103的表面與該等溝槽104的交界處I成直角,因此,於分離過程中,該承載盤103與該晶圓101接面之交接處I的直角容易刮傷該晶圓101的晶背造成損傷,而使晶圓脫離的良率降低。Referring to FIG. 1, in the process of separating a wafer 101 from a temporary substrate 102, a to-be-separated object (that is, a wafer 101 attached to the temporary substrate 102 with a crystal surface) is usually separated from the wafer 101. The crystal back direction of 101 is set on a chuck 103. A plurality of grooves 104 are formed on the surface of the carrier plate 103, and the bottoms of the grooves 104 are provided with a plurality of suction holes (not shown). When in use, the suction holes are used to pump air to the outside to make the inner space of the grooves 104 form a negative pressure state, and the wafer 101 can be sucked and fixed on the carrier plate 103. Generally, the wafer 101 and the temporary substrate 102 are bonded with wax having a melting point higher than 95° C. as a bonding layer (not shown). Therefore, subsequently, under a temperature condition (such as 150°C) at which the bonding wax can be softened or melted, a lateral thrust F is applied to the temporary substrate 102 to translate the temporary substrate 102 and push it out. The wafer 101 is separated. However, since the surface of the carrier plate 103 is at right angles to the junction I of the grooves 104, during the separation process, the right angle of the junction I of the carrier plate 103 and the wafer 101 is easy to scratch the The backside of the wafer 101 causes damage, which reduces the yield of the wafer detachment.

因此,本新型的目的,即在提供一種晶圓分離裝置,以避免於分離過程中,對晶圓造成損傷。Therefore, the purpose of the present invention is to provide a wafer separation device to avoid damage to the wafer during the separation process.

於是,本新型晶圓分離裝置,適用於將一接合於一暫時基板上的晶圓自該暫時基板分離,包含一承載盤、多道溝槽,及多個吸孔。Therefore, the novel wafer separation device is suitable for separating a wafer bonded on a temporary substrate from the temporary substrate, and includes a carrier plate, multiple grooves, and multiple suction holes.

該承載盤具有一頂面,供用以放置待分離的該暫時基板與該晶圓。The carrier plate has a top surface for placing the temporary substrate and the wafer to be separated.

每一溝槽是由二自該承載盤的頂面向下延伸形成的側壁,及一連接該二側壁遠離該頂面的一端的底壁共同定義形成,且每一溝槽的側壁與該頂面的接合處成導角。Each groove is formed by two side walls extending downward from the top surface of the carrier plate and a bottom wall connecting the two side walls away from the top surface. The side walls of each groove and the top surface are defined together. The joint is at a lead angle.

該等吸孔分布於該等溝槽的底壁,而可用於對相應的該溝槽進行抽氣。The suction holes are distributed on the bottom walls of the grooves, and can be used to pump air to the corresponding grooves.

本新型的功效在於:由於每一溝槽的側壁與該承載盤之頂面的接合處成導角,以避免該等溝槽的周緣因接合處的角度尖銳而使與之接觸的該晶圓刮傷,而可提升晶圓分離的良率。The effect of the present invention is: because the sidewalls of each groove and the top surface of the susceptor are at a lead angle, it prevents the periphery of the grooves from being in contact with the wafer due to the sharp angle of the joint. Scratch, which can improve the yield of wafer separation.

在本新型被詳細描述前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.

參閱圖2與圖3,本新型的一晶圓分離裝置200,適用於將一接合於一暫時基板102上的晶圓101自該暫時基板102分離。其中,該暫時基板102與該晶圓101之間是透過可以後加工條件移除的接合材料,例如蠟(wax)或煉松脂等材料接合。於本實施例中,是以該暫時基板102與該晶圓101之間利用蠟(圖未示)接合為例,因此,後續可利用加熱方式,令蠟融熔/軟化而將該暫時基板102與該晶圓101分離。Referring to FIGS. 2 and 3, a wafer separation device 200 of the present invention is suitable for separating a wafer 101 bonded on a temporary substrate 102 from the temporary substrate 102. Wherein, the temporary substrate 102 and the wafer 101 are bonded through a bonding material that can be removed under post-processing conditions, such as wax or rosin. In this embodiment, the temporary substrate 102 and the wafer 101 are bonded with wax (not shown) as an example. Therefore, subsequent heating can be used to melt/soften the wax to make the temporary substrate 102 Separate from the wafer 101.

該晶圓分離裝置200包含一承載盤2、多道溝槽3、多個吸孔4,及一披覆層5。The wafer separation device 200 includes a carrier plate 2, a plurality of grooves 3, a plurality of suction holes 4, and a coating layer 5.

該承載盤2具有一頂面21,供用以放置待分離的該晶圓101與該暫時基板102。The carrier plate 2 has a top surface 21 for placing the wafer 101 and the temporary substrate 102 to be separated.

該等溝槽3形成於該承載盤2上,且其中至少部分彼此連通。每一溝槽3是由二自該承載盤2的頂面21向下延伸形成的側壁31,及一連接該二側壁31遠離該頂面21的一端的底壁32共同定義形成。其中,每一溝槽3的側壁31與該頂面21的接合處成非直角的弧狀導角(Chamfering),因此,當該晶圓101設置於該承載盤2上時,能避免接合處因角度尖銳刮傷晶背,或是該承載盤2的頂面21與該等溝槽3的接合處產生應力集中,進而刮傷該晶圓101的缺點。The grooves 3 are formed on the carrier plate 2 and at least part of them communicate with each other. Each groove 3 is defined by two side walls 31 extending downward from the top surface 21 of the carrier plate 2 and a bottom wall 32 connecting the two side walls 31 at one end away from the top surface 21. Wherein, the junction between the sidewall 31 of each trench 3 and the top surface 21 forms a non-right-angled arc chamfering (Chamfering). Therefore, when the wafer 101 is placed on the carrier plate 2, the junction can be avoided The chip back is scratched due to sharp angles, or stress concentration occurs at the junction between the top surface 21 of the carrier plate 2 and the grooves 3, and the wafer 101 is scratched.

此外,要說明的是,在本實施例中,是以部分溝槽3成同心環狀、部分溝槽3成條狀,且成條狀的該等溝槽3交錯於成同心環狀的溝槽3(見圖2)為例說明,然而,實際實施時,該等溝槽3可成輻射狀及/或同心環狀,或其它分佈方式分布於該承載盤2上,並依需求可為條狀、環狀或弧狀等不同態樣,且各自可為相同或不同,並不以圖2為限。In addition, it should be noted that, in this embodiment, part of the grooves 3 are in a concentric ring shape, part of the grooves 3 are in a strip shape, and the strips of the grooves 3 are staggered in a concentric ring shape. The grooves 3 (see Fig. 2) are taken as an example. However, in actual implementation, the grooves 3 can be radially and/or concentrically ring-shaped, or distributed on the carrier plate 2 in other ways, and can be as required Different shapes such as strip, ring or arc, and each can be the same or different, and it is not limited to FIG. 2.

該等吸孔4分布於至少部分溝槽3的底壁32,且對外連通,而可用於對相應的該溝槽3進行抽氣。在一些實施例中,該等吸孔4也可以分布於該等溝槽3的側壁31,只要可用於對該等溝槽3的內部空間進行抽氣即可,其分布位置並無特別限制。The suction holes 4 are distributed on the bottom wall 32 of at least a part of the groove 3 and communicate with the outside, and can be used to pump air to the corresponding groove 3. In some embodiments, the suction holes 4 may also be distributed on the sidewalls 31 of the grooves 3, as long as they can be used to pump the inner space of the grooves 3, and their distribution positions are not particularly limited.

該披覆層5至少披覆於該承載盤2的頂面21,或是可自該頂面21再延伸覆蓋至該等溝槽3與該頂面21接合處的導角,或是再進一步延伸至該等溝槽3的側壁31及底壁32。在本實施例中,是以該披覆層5自該頂面21往該等溝槽3內延伸以披覆於該等溝槽3的側壁31及該底壁32上,且令該等吸孔4露出為例說明。The covering layer 5 covers at least the top surface 21 of the carrier plate 2, or can extend from the top surface 21 to cover the corners of the junctions of the grooves 3 and the top surface 21, or further Extending to the side walls 31 and bottom walls 32 of the grooves 3. In this embodiment, the covering layer 5 extends from the top surface 21 into the grooves 3 to cover the side walls 31 and the bottom wall 32 of the grooves 3, and make the suction The hole 4 is exposed as an example.

該披覆層5由耐製程溫度(高於讓該暫時基板102與該晶圓101之間的接合蠟熔融或軟化的溫度),且不易與待分離的晶圓101或是環境氣氛(例如空氣中的氧氣、水氣等)產生反應而對該晶圓101造成汙染的高分子材料構成。較佳地,該披覆層5是由軟質且耐高溫的高分子材料構成,使該承載盤2與該晶圓101的接觸面具有軟質性,而能作為該承載盤2與該晶圓101接合處的應力緩衝。更佳地,該披覆層5選自耐高溫且表面不易沾黏的含氟高分子材料,而不易在後續晶圓分離的過程中受到製程溫度影響而軟化或變質,或是沾黏雜質於表面。The cladding layer 5 is resistant to process temperature (higher than the temperature at which the bonding wax between the temporary substrate 102 and the wafer 101 is melted or softened), and is not easy to be separated from the wafer 101 to be separated or the ambient atmosphere (such as air Oxygen, moisture, etc.) in the wafer 101 are formed of polymer materials that react to contaminate the wafer 101. Preferably, the cladding layer 5 is made of a soft and high temperature resistant polymer material, so that the contact surface between the carrier plate 2 and the wafer 101 is soft, and can serve as the carrier plate 2 and the wafer 101 Stress buffer at the joint. More preferably, the cladding layer 5 is selected from high-temperature resistant and non-sticky fluorine-containing polymer materials, and is not easy to be softened or deteriorated due to the influence of the process temperature in the subsequent wafer separation process, or to stick impurities on surface.

在本實施例中,是以該披覆層5選自聚四氟乙烯(又稱鐵氟龍,Teflon)為例,而可承受不低於150℃的製程溫度,其本身具有抗沾黏性,以減少與該晶圓101之間產生沾黏或吸附雜質於該承載盤2的頂面21。In this embodiment, the cladding layer 5 is selected from polytetrafluoroethylene (also known as Teflon) as an example, and can withstand a process temperature of not less than 150°C, and it has anti-sticking properties. , In order to reduce the adhesion between the wafer 101 and the adsorption of impurities on the top surface 21 of the carrier plate 2.

在一些實施例中,也可視需求而毋需設置該披覆層5,只要該承載盤2的頂面21與該等溝槽3的接合處為導角,避免因溝槽3的直角對晶背造成刮傷的情形即可。In some embodiments, the cladding layer 5 may not be provided as required, as long as the joint between the top surface 21 of the carrier plate 2 and the grooves 3 is a lead angle, so as to avoid the right angle of the grooves 3 It is fine if the back is scratched.

實施時,可將如圖1所示由該暫時基板102與該晶圓101以蠟接合而成的一待分離物,以該晶圓101的晶背朝向該承載盤2的方向放置於如圖2所示的該承載盤2的頂面21上,由於該等溝槽3至少部分彼此連通,而令該晶圓101對應於該等溝槽3的接合面與相應的溝槽3形成一內部空間;接著,經由該等吸孔4抽氣,而使該內部空間相較於外部環境形成負壓狀態,令該晶圓101利用外部環境與該內部空間之間的壓差而固設於該承載盤2上;隨後,調整製程溫度至約160℃,以令用於接合該晶圓101與該暫時基板102的蠟軟化而成熔融狀態,使該暫時基板102與該晶圓101間的接著力下降;之後,即可透過施加一側向推力於該暫時基板102 (即施力方向平行於該承載盤2的頂面21),以將該暫時基板102平移推出,而將該晶圓101與該暫時基板102分離。於本案中,由於該等溝槽3與該承載盤2的頂面21之接合處為非直角狀的導角,以令該晶圓101固設於該承載盤2上時不易於接合處產生刮痕,因此在推移該暫時基板102的過程中,能減低該等溝槽3的邊緣刮傷該晶圓101的晶背的情形發生。此外,透過於該承載盤2的頂面21披覆該披覆層5,可令與該晶圓101的接觸面具有表面光滑與抗沾黏的性質,因此能進一步減少對該晶圓101造成損傷,同時減少異物沾黏的情況。During implementation, a to-be-separated object formed by bonding the temporary substrate 102 and the wafer 101 with wax as shown in FIG. 1 can be placed in the direction in which the wafer 101 faces the carrier plate 2 On the top surface 21 of the carrier plate 2 shown in 2, since the grooves 3 are at least partially connected to each other, the joint surface of the wafer 101 corresponding to the grooves 3 and the corresponding grooves 3 form an interior Space; then, through the suction holes 4 suction, so that the internal space compared to the external environment to form a negative pressure state, so that the wafer 101 uses the pressure difference between the external environment and the internal space to be fixed in the Carrier plate 2; subsequently, adjust the process temperature to about 160 ℃, so that the wax used to bond the wafer 101 and the temporary substrate 102 is softened into a molten state, so that the temporary substrate 102 and the wafer 101 The force drops; then, by applying a lateral thrust to the temporary substrate 102 (that is, the direction of force is parallel to the top surface 21 of the carrier plate 2), the temporary substrate 102 is pushed out by translation, and the wafer 101 It is separated from the temporary substrate 102. In this case, since the joints between the grooves 3 and the top surface 21 of the carrier plate 2 are non-right-angled chamfers, it is not easy to produce joints when the wafer 101 is fixed on the carrier plate 2 Scratches, therefore, during the process of moving the temporary substrate 102, it is possible to reduce the occurrence of scratches on the backside of the wafer 101 by the edges of the trenches 3. In addition, by covering the cladding layer 5 on the top surface 21 of the carrier plate 2, the contact surface with the wafer 101 can have a smooth surface and anti-adhesion properties, thereby further reducing the damage caused to the wafer 101. Damage, while reducing the adhesion of foreign objects.

綜上所述,本案晶圓分離裝置200利用形成於該承載盤2上的每一溝槽3的側壁31與該頂面21的接合處成導角,以避免該等溝槽3的周緣對與之接觸的該晶圓101,因直角角度尖銳而刮傷該晶圓101的晶背,此外,藉由該披覆層5可使與該晶圓101的接觸表面具有抗沾黏的性質,能避免與該晶圓101沾黏或吸附雜質於該承載盤2的頂面21,故確實能達成本新型的目的。In summary, the wafer separation device 200 of the present application uses the sidewall 31 of each groove 3 formed on the carrier plate 2 and the top surface 21 to form a chamfered angle, so as to prevent the peripheries of the grooves 3 from facing each other. The wafer 101 in contact with it scratches the back of the wafer 101 due to the sharp right-angle angle. In addition, the coating layer 5 can make the contact surface with the wafer 101 anti-adhesive properties. It can avoid sticking to the wafer 101 or adsorbing impurities on the top surface 21 of the carrier plate 2, so it can indeed achieve the purpose of new cost.

惟以上所述者,僅為本新型的實施例而已,當不能以此限定本新型實施的範圍,凡是依本新型申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本新型專利涵蓋的範圍內。However, the above are only examples of the present model. When the scope of implementation of the present model cannot be limited by this, all simple equivalent changes and modifications made in accordance with the patent scope of the present model application and the contents of the patent specification still belong to This new patent covers the scope.

101:晶圓 102:暫時基板 200:晶圓分離裝置 2:承載盤 21:頂面 3:溝槽 31:側壁 32:底壁 4:吸孔 5:披覆層 101: Wafer 102: Temporary substrate 200: Wafer separation device 2: Carrier plate 21: top surface 3: groove 31: side wall 32: bottom wall 4: Suction hole 5: Coating layer

本新型的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一剖視示意圖,說明習知的一晶圓分離裝置; 圖2是一立體示意圖,說明本新型晶圓分離裝置的一實施例;及 圖3是一剖視示意圖,說明沿圖2之III-III割面線的剖視結構。 The other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, among which: Figure 1 is a schematic cross-sectional view illustrating a conventional wafer separation device; Figure 2 is a three-dimensional schematic diagram illustrating an embodiment of the novel wafer separation device; and 3 is a schematic cross-sectional view illustrating the cross-sectional structure along the line III-III of FIG. 2.

101:晶圓 101: Wafer

102:暫時基板 102: Temporary substrate

2:承載盤 2: Carrier plate

21:頂面 21: top surface

3:溝槽 3: groove

31:側壁 31: side wall

32:底壁 32: bottom wall

5:披覆層 5: Coating layer

Claims (7)

一種晶圓分離裝置,適用於將一接合於一暫時基板上的晶圓自該暫時基板分離,包含: 一承載盤,具有一頂面,供用以放置待分離的該暫時基板與該晶圓; 多道溝槽,每一溝槽是由二自該承載盤的頂面向下延伸形成的側壁,及一連接該二側壁遠離該頂面的一端的底壁共同定義形成,且每一道溝槽的側壁與該頂面的接合處成導角;及 多個吸孔,分布於該等溝槽的底壁,而可用於對相應的該溝槽進行抽氣。 A wafer separation device suitable for separating a wafer bonded on a temporary substrate from the temporary substrate, comprising: A carrier tray with a top surface for placing the temporary substrate and the wafer to be separated; Multiple grooves, each groove is formed by two side walls extending downward from the top surface of the carrier plate, and a bottom wall connecting the two side walls away from the top surface, and each groove The junction between the side wall and the top surface forms a lead angle; and A plurality of suction holes are distributed on the bottom walls of the grooves, and can be used to pump air to the corresponding grooves. 如請求項1所述的晶圓分離裝置,還包含一披覆層,披覆於該承載盤的頂面,該披覆層延伸覆蓋至該等溝槽與該頂面接合處的導角,並選自耐高溫的高分子材料。The wafer separation device according to claim 1, further comprising a coating layer covering the top surface of the carrier plate, the coating layer extending to cover the chamfers at the junction of the grooves and the top surface, And selected from high temperature resistant polymer materials. 如請求項2所述的晶圓分離裝置,其中,該披覆層自該頂面往該等溝槽內延伸,而披覆於該等溝槽的側壁上。The wafer separation device according to claim 2, wherein the cladding layer extends from the top surface into the trenches, and covers the sidewalls of the trenches. 如請求項2或3所述的晶圓分離裝置,其中,該披覆層選自聚四氟乙烯。The wafer separation device according to claim 2 or 3, wherein the coating layer is selected from polytetrafluoroethylene. 如請求項1所述的晶圓分離裝置,其中,該等溝槽相互交錯,且該等溝槽的其中至少部分彼此連通。The wafer separation device according to claim 1, wherein the grooves are interlaced with each other, and at least part of the grooves are connected to each other. 如請求項1所述的晶圓分離裝置,其中,該等溝槽可成條狀、環狀或弧狀,各自可為相同或不同。The wafer separation device according to claim 1, wherein the grooves may be striped, ring-shaped or arc-shaped, and each may be the same or different. 如請求項1所述的晶圓分離裝置,其中,該等溝槽成輻射狀及/或同心環狀分布。The wafer separation device according to claim 1, wherein the grooves are distributed in a radial and/or concentric ring shape.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118116861A (en) * 2024-01-24 2024-05-31 晋城市光机电产业协调服务中心(晋城市光机电产业研究院) Wafer thinning tray and wafer thinning method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118116861A (en) * 2024-01-24 2024-05-31 晋城市光机电产业协调服务中心(晋城市光机电产业研究院) Wafer thinning tray and wafer thinning method

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