TWM618739U - Wafer separation device - Google Patents
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- TWM618739U TWM618739U TW110208577U TW110208577U TWM618739U TW M618739 U TWM618739 U TW M618739U TW 110208577 U TW110208577 U TW 110208577U TW 110208577 U TW110208577 U TW 110208577U TW M618739 U TWM618739 U TW M618739U
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Abstract
一種晶圓分離裝置,適用於將一晶圓自所接合的一暫時基板分離,該裝置包含一承載盤、多道溝槽,及多個吸孔。該承載盤供用以放置待分離的該暫時基板與該晶圓,並具有一頂面。每一溝槽是由二自該承載盤的頂面向下延伸形成的側壁,及一連接該二側壁遠離該頂面的一端的底壁共同定義形成,且每一溝槽的側壁與該頂面的接合處成導角。該等吸孔分布於該等溝槽的底壁,而可用於對相應的該溝槽進行抽氣。當待分離的晶圓固設於該承載盤時,由於該等溝槽與該頂面之接合處成導角,而能避免因接合處的角度過於尖銳,而有刮傷該晶圓的情形發生。A wafer separation device is suitable for separating a wafer from a temporary substrate to which it is joined. The device includes a carrier plate, a plurality of grooves, and a plurality of suction holes. The carrier tray is used to place the temporary substrate and the wafer to be separated, and has a top surface. Each groove is formed by two side walls extending downward from the top surface of the carrier plate and a bottom wall connecting the two side walls away from the top surface. The side walls of each groove and the top surface are defined together. The joint is at a lead angle. The suction holes are distributed on the bottom walls of the grooves, and can be used to pump air to the corresponding grooves. When the wafer to be separated is fixed on the carrier tray, since the grooves and the joints of the top surface form a lead angle, it can avoid the situation of scratching the wafer due to the excessively sharp angles of the joints happen.
Description
本新型是有關於一種分離裝置,特別是指一種適用於半導體晶圓的分離裝置。The present invention relates to a separation device, in particular to a separation device suitable for semiconductor wafers.
在半導體產業中,晶圓逐漸往體積微型化的方向發展,目前而言,已可將晶圓薄型化至數百微米到數十微米。為了確保該晶圓在製程中擁有足夠的機械支撐力,同時避免在製程中發生翹曲或變形,或是基於製程過程的需求,業界會以一暫時基板貼合於該晶圓的表面,再於製程結束後將該暫時性基板自該晶圓分離。In the semiconductor industry, wafers are gradually developing in the direction of volume miniaturization. At present, wafers can be thinned to hundreds of microns to tens of microns. In order to ensure that the wafer has sufficient mechanical support during the manufacturing process, while avoiding warping or deformation during the manufacturing process, or based on the requirements of the manufacturing process, the industry will attach a temporary substrate to the surface of the wafer, and then After the process is finished, the temporary substrate is separated from the wafer.
參閱圖1,在將一晶圓101自一暫時基板102上分離的過程中,通常是將一待分離物(即以晶面貼合於該暫時基板102上的晶圓101)以該晶圓101的晶背方向設置於一承載盤103(chuck)上。該承載盤103表面形成有多道溝槽104,且該等溝槽104底部具有多個吸孔(圖未示)。使用時,利用該等吸孔對外抽氣以令該等溝槽104的內部空間形成負壓狀態,而可將該晶圓101吸附固設於該承載盤103上。由於一般情況下該晶圓101與該暫時基板102是利用是以熔點高於95℃的蠟作為接合層(圖未示)接合。因此,後續會在一可令該接合用的蠟軟化或融熔的溫度條件(如150℃)下,再施加一側向推力F於該暫時基板102,以將該暫時基板102平移推出而與該晶圓101分離。然而,由於該承載盤103的表面與該等溝槽104的交界處I成直角,因此,於分離過程中,該承載盤103與該晶圓101接面之交接處I的直角容易刮傷該晶圓101的晶背造成損傷,而使晶圓脫離的良率降低。Referring to FIG. 1, in the process of separating a
因此,本新型的目的,即在提供一種晶圓分離裝置,以避免於分離過程中,對晶圓造成損傷。Therefore, the purpose of the present invention is to provide a wafer separation device to avoid damage to the wafer during the separation process.
於是,本新型晶圓分離裝置,適用於將一接合於一暫時基板上的晶圓自該暫時基板分離,包含一承載盤、多道溝槽,及多個吸孔。Therefore, the novel wafer separation device is suitable for separating a wafer bonded on a temporary substrate from the temporary substrate, and includes a carrier plate, multiple grooves, and multiple suction holes.
該承載盤具有一頂面,供用以放置待分離的該暫時基板與該晶圓。The carrier plate has a top surface for placing the temporary substrate and the wafer to be separated.
每一溝槽是由二自該承載盤的頂面向下延伸形成的側壁,及一連接該二側壁遠離該頂面的一端的底壁共同定義形成,且每一溝槽的側壁與該頂面的接合處成導角。Each groove is formed by two side walls extending downward from the top surface of the carrier plate and a bottom wall connecting the two side walls away from the top surface. The side walls of each groove and the top surface are defined together. The joint is at a lead angle.
該等吸孔分布於該等溝槽的底壁,而可用於對相應的該溝槽進行抽氣。The suction holes are distributed on the bottom walls of the grooves, and can be used to pump air to the corresponding grooves.
本新型的功效在於:由於每一溝槽的側壁與該承載盤之頂面的接合處成導角,以避免該等溝槽的周緣因接合處的角度尖銳而使與之接觸的該晶圓刮傷,而可提升晶圓分離的良率。The effect of the present invention is: because the sidewalls of each groove and the top surface of the susceptor are at a lead angle, it prevents the periphery of the grooves from being in contact with the wafer due to the sharp angle of the joint. Scratch, which can improve the yield of wafer separation.
在本新型被詳細描述前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.
參閱圖2與圖3,本新型的一晶圓分離裝置200,適用於將一接合於一暫時基板102上的晶圓101自該暫時基板102分離。其中,該暫時基板102與該晶圓101之間是透過可以後加工條件移除的接合材料,例如蠟(wax)或煉松脂等材料接合。於本實施例中,是以該暫時基板102與該晶圓101之間利用蠟(圖未示)接合為例,因此,後續可利用加熱方式,令蠟融熔/軟化而將該暫時基板102與該晶圓101分離。Referring to FIGS. 2 and 3, a
該晶圓分離裝置200包含一承載盤2、多道溝槽3、多個吸孔4,及一披覆層5。The
該承載盤2具有一頂面21,供用以放置待分離的該晶圓101與該暫時基板102。The
該等溝槽3形成於該承載盤2上,且其中至少部分彼此連通。每一溝槽3是由二自該承載盤2的頂面21向下延伸形成的側壁31,及一連接該二側壁31遠離該頂面21的一端的底壁32共同定義形成。其中,每一溝槽3的側壁31與該頂面21的接合處成非直角的弧狀導角(Chamfering),因此,當該晶圓101設置於該承載盤2上時,能避免接合處因角度尖銳刮傷晶背,或是該承載盤2的頂面21與該等溝槽3的接合處產生應力集中,進而刮傷該晶圓101的缺點。The
此外,要說明的是,在本實施例中,是以部分溝槽3成同心環狀、部分溝槽3成條狀,且成條狀的該等溝槽3交錯於成同心環狀的溝槽3(見圖2)為例說明,然而,實際實施時,該等溝槽3可成輻射狀及/或同心環狀,或其它分佈方式分布於該承載盤2上,並依需求可為條狀、環狀或弧狀等不同態樣,且各自可為相同或不同,並不以圖2為限。In addition, it should be noted that, in this embodiment, part of the
該等吸孔4分布於至少部分溝槽3的底壁32,且對外連通,而可用於對相應的該溝槽3進行抽氣。在一些實施例中,該等吸孔4也可以分布於該等溝槽3的側壁31,只要可用於對該等溝槽3的內部空間進行抽氣即可,其分布位置並無特別限制。The
該披覆層5至少披覆於該承載盤2的頂面21,或是可自該頂面21再延伸覆蓋至該等溝槽3與該頂面21接合處的導角,或是再進一步延伸至該等溝槽3的側壁31及底壁32。在本實施例中,是以該披覆層5自該頂面21往該等溝槽3內延伸以披覆於該等溝槽3的側壁31及該底壁32上,且令該等吸孔4露出為例說明。The covering
該披覆層5由耐製程溫度(高於讓該暫時基板102與該晶圓101之間的接合蠟熔融或軟化的溫度),且不易與待分離的晶圓101或是環境氣氛(例如空氣中的氧氣、水氣等)產生反應而對該晶圓101造成汙染的高分子材料構成。較佳地,該披覆層5是由軟質且耐高溫的高分子材料構成,使該承載盤2與該晶圓101的接觸面具有軟質性,而能作為該承載盤2與該晶圓101接合處的應力緩衝。更佳地,該披覆層5選自耐高溫且表面不易沾黏的含氟高分子材料,而不易在後續晶圓分離的過程中受到製程溫度影響而軟化或變質,或是沾黏雜質於表面。The
在本實施例中,是以該披覆層5選自聚四氟乙烯(又稱鐵氟龍,Teflon)為例,而可承受不低於150℃的製程溫度,其本身具有抗沾黏性,以減少與該晶圓101之間產生沾黏或吸附雜質於該承載盤2的頂面21。In this embodiment, the
在一些實施例中,也可視需求而毋需設置該披覆層5,只要該承載盤2的頂面21與該等溝槽3的接合處為導角,避免因溝槽3的直角對晶背造成刮傷的情形即可。In some embodiments, the
實施時,可將如圖1所示由該暫時基板102與該晶圓101以蠟接合而成的一待分離物,以該晶圓101的晶背朝向該承載盤2的方向放置於如圖2所示的該承載盤2的頂面21上,由於該等溝槽3至少部分彼此連通,而令該晶圓101對應於該等溝槽3的接合面與相應的溝槽3形成一內部空間;接著,經由該等吸孔4抽氣,而使該內部空間相較於外部環境形成負壓狀態,令該晶圓101利用外部環境與該內部空間之間的壓差而固設於該承載盤2上;隨後,調整製程溫度至約160℃,以令用於接合該晶圓101與該暫時基板102的蠟軟化而成熔融狀態,使該暫時基板102與該晶圓101間的接著力下降;之後,即可透過施加一側向推力於該暫時基板102 (即施力方向平行於該承載盤2的頂面21),以將該暫時基板102平移推出,而將該晶圓101與該暫時基板102分離。於本案中,由於該等溝槽3與該承載盤2的頂面21之接合處為非直角狀的導角,以令該晶圓101固設於該承載盤2上時不易於接合處產生刮痕,因此在推移該暫時基板102的過程中,能減低該等溝槽3的邊緣刮傷該晶圓101的晶背的情形發生。此外,透過於該承載盤2的頂面21披覆該披覆層5,可令與該晶圓101的接觸面具有表面光滑與抗沾黏的性質,因此能進一步減少對該晶圓101造成損傷,同時減少異物沾黏的情況。During implementation, a to-be-separated object formed by bonding the
綜上所述,本案晶圓分離裝置200利用形成於該承載盤2上的每一溝槽3的側壁31與該頂面21的接合處成導角,以避免該等溝槽3的周緣對與之接觸的該晶圓101,因直角角度尖銳而刮傷該晶圓101的晶背,此外,藉由該披覆層5可使與該晶圓101的接觸表面具有抗沾黏的性質,能避免與該晶圓101沾黏或吸附雜質於該承載盤2的頂面21,故確實能達成本新型的目的。In summary, the
惟以上所述者,僅為本新型的實施例而已,當不能以此限定本新型實施的範圍,凡是依本新型申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本新型專利涵蓋的範圍內。However, the above are only examples of the present model. When the scope of implementation of the present model cannot be limited by this, all simple equivalent changes and modifications made in accordance with the patent scope of the present model application and the contents of the patent specification still belong to This new patent covers the scope.
101:晶圓 102:暫時基板 200:晶圓分離裝置 2:承載盤 21:頂面 3:溝槽 31:側壁 32:底壁 4:吸孔 5:披覆層 101: Wafer 102: Temporary substrate 200: Wafer separation device 2: Carrier plate 21: top surface 3: groove 31: side wall 32: bottom wall 4: Suction hole 5: Coating layer
本新型的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一剖視示意圖,說明習知的一晶圓分離裝置; 圖2是一立體示意圖,說明本新型晶圓分離裝置的一實施例;及 圖3是一剖視示意圖,說明沿圖2之III-III割面線的剖視結構。 The other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, among which: Figure 1 is a schematic cross-sectional view illustrating a conventional wafer separation device; Figure 2 is a three-dimensional schematic diagram illustrating an embodiment of the novel wafer separation device; and 3 is a schematic cross-sectional view illustrating the cross-sectional structure along the line III-III of FIG. 2.
101:晶圓 101: Wafer
102:暫時基板 102: Temporary substrate
2:承載盤 2: Carrier plate
21:頂面 21: top surface
3:溝槽 3: groove
31:側壁 31: side wall
32:底壁 32: bottom wall
5:披覆層 5: Coating layer
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118116861A (en) * | 2024-01-24 | 2024-05-31 | 晋城市光机电产业协调服务中心(晋城市光机电产业研究院) | Wafer thinning tray and wafer thinning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118116861A (en) * | 2024-01-24 | 2024-05-31 | 晋城市光机电产业协调服务中心(晋城市光机电产业研究院) | Wafer thinning tray and wafer thinning method |
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