TWM618388U - Filter structure with any combination of R, G, B and IR - Google Patents

Abstract

A filter junction of any combination of R, G, B, and IR, comprising a substrate and a filter layer, wherein the substrate is a wafer semiconductor sensing element, and the filter layer is formed on one of the substrates The side surface is composed of a plurality of basic units arranged in a matrix. Each basic unit includes a plurality of pixel filter films formed by vacuum coating. The plurality of pixel filter films includes an R pixel filter film, a G pixel filter film, Any plural of a B pixel filter film and an IR pixel filter film, and the plural pixel filter films can only pass light of the corresponding wavelength; thereby, the uniformity of the filter film can be better ( uniformity±5nm), and can meet the requirements of optical specifications.

Description

Any combination of R, G, B, IR filter structure

This creation is about the application of Ambient Light Sensor (ALS), Proximity Sensor (PS), RGB color temperature sensor and gesture sensor... In the technical field of the filter structure, it particularly refers to a filter structure with any combination of R, G, B, and IR that can achieve better uniformity of the filter film (uniformity ± 5 nm) and can meet the requirements of optical specifications. .

Traditional optical sensors, such as visible light camera modules, need to use infrared light cut-off filters to filter out unnecessary low-frequency near-infrared light, so as to prevent infrared light from affecting the visible light part and produce false colors or ripples, but the traditional visible light The camera module does not have independent spectral R pixels, G pixels, B pixels and IR pixels, so it has high transmittance in a wide range of 350nm to 700nm, and the formed image has a low sensitivity resolution, so color filtering is required The film performs the filtering function of R pixels, G pixels, B pixels and IR pixels, so that the formed image has a higher sensitive resolution.

Commonly known color filters, as shown in the Taiwan Patent Application No. 100112527, mainly use inkjet printing. The thickness of the color filter film is about 5 microns, which wastes the use of pigment photoresist. The resolution And the reproducibility of the position is poor. The manufacturing process gradually increases with the size of the substrate. Initially, the method of photoresist coating is from the center drop (tube) plus spin coating (spin coating), and has evolved into a slit coating. Slit plus spin coating, its purpose is nothing more than to reduce photoresistance The amount of solvent used, and the larger size of the substrate in the future, will cause the uniformity of the filter film to fail to meet the specification requirements (±2%) and the optical transmittance and wavelength to fail to meet the specification requirements (low cut-off band) The penetration rate is 1%).

In view of this, the author developed and designed this creation based on the above-mentioned problems, and in-depth ideas, and actively researched and improved trial-making.

The main purpose of this creation is to effectively solve the problem of conventional color filters and their manufacturing methods when making large substrate sizes. The uniformity of the filter film cannot meet the specification requirements (±2%) and the optical transmittance. Those who have problems such as the wavelength that cannot meet the specification requirements (cut-off band is less than 1% of the transmittance).

This creation is to provide a filter structure of any combination of R, G, B, and IR, including a substrate and a filter layer. Wherein, the substrate is a wafer semiconductor sensing element. The filter layer is formed on one side of the substrate and consists of a plurality of basic units arranged in a matrix. Each basic unit includes a plurality of pixel filter films formed by a vacuum coating method, and the plurality of pixel filter films includes an R pixel Any plural of the filter film, a G pixel filter film, a B pixel filter film, and an IR pixel filter film, and the plurality of pixel filter films can only pass light of corresponding wavelengths.

The filter structure of any combination of R, G, B, IR provided by this creation can be made by vacuum coating with the photoresist mask, so that the thickness of the filter film can be reduced even when large substrate sizes are made. 300nm to 900nm, uniformity of less than ±5nm, and meets the cut-off band penetration rate of less than 1% specification requirements, and then when it is used in Ambient Light Sensor (ALS), proximity sensing Chip (Proximity Sensor, PS), RGB color temperature sensor chip and gesture sensor chip... When the sensor chip of the optical sensor, it can make the reaction time more Fast. Compared with the same product, the color recognition rate and adjustment sensitivity can be greatly improved, and the brightness of the photosensitive contrast can be greatly improved. .

10: substrate

20: filter layer

21: basic unit

22: Pixel filter film

23: Silver (Ag) layer

24: High refractive index layer

[Figure 1] is a schematic diagram of the structure of this creation.

[Figure 2] is a schematic diagram of the basic unit configuration of the filter layer of this creation.

[Figure 3] is the spectrum of the R pixel filter film created by this creation.

[Figure 4] is the spectrogram of the G pixel filter film created by this creation.

[Figure 5] is the spectrum of the B pixel filter film created by this creation.

[Figure 6] is the spectrum of the IR pixel filter film of this creation.

Please refer to Figures 1 and 2, which show that the filter structure of any combination of R, G, B, and IR described in this creation includes a substrate 10 and a filter layer 20, in which:

The substrate 10 is a wafer semiconductor sensor element.

The filter layer 20 is formed on one side of the substrate 10 and is composed of a plurality of basic units 21 arranged in a matrix. Each basic unit 21 includes a plurality of pixel filter films 22 formed by vacuum coating. The plurality of pixel filter films 22 include any one of an R pixel filter film, a G pixel filter film, a B pixel filter film, and an IR pixel filter film, and the plurality of pixel filter films are only It can pass light of corresponding wavelength.

The combination of the plural pixel filter films 22 of each basic unit 21 of this creation can be any two of the R pixel filter film, a G pixel filter film, a B pixel filter film and an IR pixel filter film. Any combination of three or four, this embodiment uses a combination of four as an example. in:

The R pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a plurality of high refractive index layers 24 with a higher refractive index than the silver (Ag) layer. The thickness is 300nm to 900nm, so that it has a wavelength between 300nm and 1100nm. A passband is formed in the range, the central wavelength of the passband is from 625nm to 740nm, the transmittance of the other cutoff bands is less than 1%, and the transmittance of the central wavelength of the passband is greater than 55% when the incident angle is 0°.

The G pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a plurality of high refractive index layers 24 with a higher refractive index than the silver (Ag) layer. The thickness is 300nm to 900nm, so that it has a thickness of 300nm to 1100nm. A passband is formed in the wavelength range, the center wavelength of the passband is 500nm to 565nm, and the transmittance of the rest of the cutoff band is less than 1%, and the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°.

The B pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a plurality of high refractive index layers 24 with a refractive index higher than that of the silver (Ag) layer. A passband formed in the wavelength range, the center wavelength of the passband is between 485nm and 500nm, and the transmittance of the rest of the cutoff band is less than 1%, and the transmittance of the center wavelength of the passband is greater than 55% when the incident angle is 0°.

The IR pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a plurality of high refractive index layers 24 with a higher refractive index than the silver (Ag) layer. The thickness is 300nm to 900nm, so that it has a thickness of 300nm to 1100nm A passband formed in the wavelength range. The center wavelength is only partially or partially overlapped to form a passband in the infrared wavelength range of 800nm to 1100nm. The transmittance of the rest of the cutoff band is less than 1%. The center wavelength of the passband is at the angle of incidence The transmittance is greater than 30% at 0°.

In the above-mentioned plural pixel filter film 22, the refractive index of the plural silver (Ag) layer 23 in the wavelength range of 350 nm to 2000 nm is 0.1 to 0.48, and the extinction coefficient is 5.85 to 14.4. The plurality of high refractive index layers 24 may be titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), Mixed membrane material (H ₄ ) and its mixture. Moreover, the refractive index of the complex high refractive index layer 24 in the wavelength range of 350 nm to 1100 nm is greater than 1.6, and the extinction coefficient is close to zero. The combination of the plurality of silver (Ag) layers 23 and the plurality of high refractive index layers 24 of different thicknesses and layers can form the R pixel filter film, the G pixel filter film, the B pixel filter film, and the IR pixel filter film.

Hereinafter, various structural conditions of the R pixel filter film, the G pixel filter film, the B pixel filter film, and the IR pixel filter film are described as examples.

The R pixel filter film: The R pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a high refractive index layer 24, the high refractive index layer 24 is respectively titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), mixed film material (H ₄ ), each stacked with a thickness of about 400nm to 800nm, where the five The refractive index of the Ti3O5 layer in the wavelength range of 350nm to 1100nm is greater than 2.5, and the extinction coefficient is close to zero. The refractive index of the silver (Ag) layer in the wavelength range of 350 nm to 2000 nm is 0.1 to 0.48, and the extinction coefficient is 5.85 to 14.4. The structural conditions are as follows:

As shown in Figure 3, the R pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is 625nm to 740nm, and the transmittance ( transmittance) is greater than 55%, and the transmittance of the other cut-off bands is less than 1%.

The G pixel filter film: The G pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a high refractive index layer 24, the high refractive index layer 24 is respectively titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), mixed film material (H ₄ ), each stacked with a thickness of about 150nm to 450nm, where the five The refractive index of the Ti3O5 layer in the wavelength range of 350nm to 1100nm is greater than 2.5, and the extinction coefficient is close to zero. The refractive index of the silver (Ag) layer in the wavelength range of 350 nm to 2000 nm is 0.1 to 0.48, and the extinction coefficient is 5.85 to 14.4. The structural conditions are as follows:

As shown in Figure 4, the G pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is 500nm to 565nm, and the transmittance of the center wavelength of the passband at the incident angle of 0° ( transmittance) is greater than 55%, and the transmittance of the other cut-off bands is less than 1%.

The B pixel filter film: The B pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a high refractive index layer 24, the high refractive index layer 24 is respectively titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), mixed film material (H ₄ ), each stacked with a thickness of about 200nm to 600nm, where the five The refractive index of the Ti3O5 layer in the wavelength range of 350nm to 1100nm is greater than 2.5, and the extinction coefficient is close to zero. The refractive index of the silver (Ag) layer in the wavelength range of 350 nm to 2000 nm is 0.1 to 0.48, and the extinction coefficient is 5.85 to 14.4. The structural conditions are as follows:

As shown in Figure 5, the B pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the central wavelength of the passband is 485nm to 500nm, and the transmittance of the central wavelength of the passband is at an incident angle of 0° ( transmittance) is greater than 55%, and the transmittance of the other cut-off bands is less than 1%.

The IR pixel filter film: The IR pixel filter film is formed by stacking a plurality of silver (Ag) layers 23 and a high refractive index layer 24, the high refractive index layer 24 is respectively titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), mixed film material (H ₄ ), each stacked with a thickness of about 200nm to 600nm, where the five The refractive index of the Ti3O5 layer in the wavelength range of 350nm to 1100nm is greater than 2.5, and the extinction coefficient is close to zero. The refractive index of the silver (Ag) layer in the wavelength range of 350 nm to 2000 nm is 0.1 to 0.48, and the extinction coefficient is 5.85 to 14.4. The structural conditions are as follows:

As shown in Figure 6, the IR pixel filter film has a pass band in the wavelength range of 300nm to 1100nm. The center wavelength is only partially or partially overlapped to form a pass band in the infrared wavelength range of 800nm to 1100nm, and the rest is cut off. The band transmittance is less than 1%, and the central wavelength of the passband has a transmittance greater than 30% when the incident angle is 0°.

The filter structure of any combination of R, G, B, IR provided by this creation can be made by vacuum coating with the photoresist mask, so that the thickness of the filter film can be reduced even when large substrate sizes are made. 300nm to 900nm, the uniformity is less than ±5nm, and meets the requirements of optical specifications, and then when it is applied to the ambient light sensor chip (Ambient Light Sensor, ALS), proximity sensor chip (Proximity Sensor, PS), RGB color temperature sensor chip, gesture sensor chip... and other optical sensor sensor chips, which can make the reaction time faster, compared to the color recognition rate of the same product And adjusting the sensitivity can be greatly improved, and it can greatly improve the brightness of the photosensitive contrast.

10: substrate

20: filter layer

22: Pixel filter film

23: Silver (Ag) layer

24: High refractive index layer

Claims (7)

A filter structure of any combination of R, G, B, and IR, including: A substrate, which is a wafer semiconductor sensing element; and A filter layer is formed on one side of the substrate and is composed of a plurality of basic units arranged in a matrix. Each basic unit includes a plurality of pixel filter films formed by a vacuum coating method, and the plurality of pixel filter films includes an R Any combination of the pixel filter film, a G pixel filter film, a B pixel filter film and an IR pixel filter film makes the plurality of pixel filter films only pass light of corresponding wavelengths. The filter structure of any combination of R, G, B, IR as described in claim 1, in which: The R pixel filter film is formed by stacking a plurality of silver (Ag) layers and a plurality of high refractive index layers with a higher refractive index than the silver (Ag) layer. The thickness is 300nm to 900nm, so that it has a wavelength range of 300nm to 1100nm. A passband is formed, the center wavelength of the passband is between 625nm and 740nm, and the rest is cut off. When the incident angle is 0°, the transmittance of the passband center wavelength is greater than 55%, and the cutoff transmittance is less than 1%; The G pixel filter film is formed by stacking a plurality of silver (Ag) layers and a plurality of high refractive index layers with a higher refractive index than the silver (Ag) layer. The thickness is 300nm to 900nm, so that it has a wavelength range of 300nm to 1100nm. A passband is formed inside, the center wavelength of the passband is between 500nm and 565nm, and the rest are cut off. When the incident angle is 0°, the transmittance of the passband center wavelength is greater than 55%, and the cutoff transmittance is less than 1%; The B pixel filter film is composed of multiple silver (Ag) layers and a refractive index ratio of silver (Ag) The multiple high refractive index layers of the layer height are stacked on each other, and the thickness is 300nm to 900nm, so that there is a passband formed in the wavelength range of 300nm to 1100nm, the center wavelength of the passband is 485nm to 500nm, and the rest is cut off, the center of the passband The transmittance of the wavelength when the incident angle is 0° is greater than 55%, and the cut-off band transmittance is less than 1%; The IR pixel filter film is formed by stacking a plurality of silver (Ag) layers and a plurality of high refractive index layers with a higher refractive index than the silver (Ag) layer. The thickness is 300nm to 900nm, so that it has a wavelength range of 300nm to 1100nm. A passband formed inside, the center wavelength is only partly or partially overlapped to form a passband in the infrared wavelength range of 800nm to 1100nm, and the transmittance of the rest of the cutoff band is less than 1%. The center wavelength of the passband is at an incident angle of 0 °Transmittance is greater than 30%. The filter structure of any combination of R, G, B, IR as described in claim 2, wherein the refractive index of the plurality of silver (Ag) layers of the plurality of pixel filter films in the wavelength range of 350nm to 2000nm is 0.1 to 0.48 , The extinction coefficient is 5.85 to 14.4, the complex high refractive index layer, which can be titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), mixed film material (H ₄ ) and mixtures thereof, and the refractive index of the complex high refractive index layer in the wavelength range of 350 nm to 1100 nm is greater than 1.6, and the extinction coefficient is close to zero. The filter structure of any combination of R, G, B, IR as described in claim 3, wherein the structure condition of the R pixel filter film is any one of the following tables:

The filter structure of any combination of R, G, B, IR as described in claim 3, wherein the structure condition of the G pixel filter film is any one of the following tables:

The filter structure of any combination of R, G, B, IR as described in claim 3, wherein the structure condition of the B pixel filter film is any of the following tables:

The filter structure of any combination of R, G, B, IR as described in claim 3, wherein the structure condition of the IR pixel filter film is any of the following tables:

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