TWM616568U - Film deposition machine capable of adjusting magnetic field distribution and magnetic field adjusting device thereof - Google Patents

Abstract

The present model provides a thin film deposition machine with adjustable magnetic field distribution, which includes a reaction chamber, a carrying plate, a target, a magnetic device, a fixing unit and at least one shielding unit. The carrier plate and the target material are located in the accommodating space of the reaction chamber, wherein the carrier plate is used to carry at least one substrate, and a surface of the target material faces the carrier plate and the substrate. The magnetic device is located on the other surface of the target, and forms a magnetic field in the accommodating space of the reaction chamber via the target. The fixing unit is arranged between the magnetic device and the target, and includes at least one arrangement space. The shielding unit is arranged in the installation space of the fixed unit, wherein the shielding unit is made of conductive material and used to shield part of the magnetic force generated by the magnetic device to adjust the magnetic field distribution in the accommodating space.

Description

Film deposition machine capable of adjusting magnetic field distribution and its magnetic field adjusting device

The present invention relates to a thin film deposition machine with adjustable magnetic field distribution, which can fine-tune the magnetic field distribution in the accommodating space, and can effectively improve the uniformity of the film thickness deposited on the surface of the substrate.

Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) and Atomic Layer Deposition (ALD) are all commonly used thin film deposition machines, and are commonly used in the manufacturing processes of integrated circuits, light emitting diodes, and displays.

The thin film deposition machine mainly includes a cavity and a substrate carrying tray, wherein the substrate carrying tray is located in the cavity and used for carrying at least one substrate. Taking physical vapor deposition as an example, a target material needs to be set in the cavity, wherein the target material faces the substrate on the substrate carrier tray. During physical vapor deposition, inert gas and/or reaction gas can be delivered into the cavity, and bias voltages are applied to the target and the substrate carrier respectively.

The inert gas in the cavity forms ionized inert gas due to the action of the high-voltage electric field, and the ionized inert gas is attracted by the bias on the target material and bombards the target material. The target atoms or molecules sputtered from the target are attracted by the bias voltage on the substrate carrier plate and are deposited on the surface of the substrate to form a thin film on the surface of the substrate.

Generally speaking, a plurality of magnets are usually arranged above the target material, wherein the magnets can rotate relative to the target material and form a magnetic field below the target material. The charged particles under the target material will be affected by the magnetic field of the magnet and will be displaced in a spiral manner. This can greatly increase the probability of collision with gas atoms, thereby increasing the sputtering rate, the efficiency and uniformity of film deposition.

During the film deposition process, how to improve the uniformity of the film thickness on the substrate has always been the goal of various process factories. The present invention provides a thin film deposition machine with adjustable magnetic field distribution. At least one fixing unit is mainly arranged between the magnetic device and the target, wherein the fixing unit includes at least one installation space. At least one shielding unit is arranged in the installation space of the fixed unit, and is located between part of the magnetic device and part of the target, so as to adjust the magnetic field distribution in the accommodating space.

An object of the present invention is to provide a thin film deposition machine with adjustable magnetic field distribution, which mainly includes a reaction chamber, a carrying plate, a target, a magnetic device, a fixing unit and at least one shielding unit. The target material and the carrier plate are located in the accommodating space of the reaction chamber, wherein one surface of the target material faces the carrier plate and the substrate carried by the target material. The magnetic device is arranged on the other surface of the target, and forms a magnetic field in the accommodating space via the target. The fixing unit is arranged between the magnetic device and the target, and at least one shielding unit can be arranged in the installation space of the fixing unit. The shielding unit is used to shield part of the magnetic field generated by the magnetic device to form a uniform magnetic field in the accommodating space of the reaction chamber, and is beneficial to form a thin film with uniform thickness on the surface of the substrate.

The fixing unit is made of a material with no conductive properties, so it will not shield the magnetic field generated by the magnetic device. In practical applications, the fixing unit may be arranged on the surface of the target material, or a cavity fixed above the target material, without directly contacting the target material. The setting of the fixing unit will facilitate the user to install or disassemble the shielding unit, or adjust the magnetic field area shielded by the shielding unit, which is beneficial to improve the convenience in use.

An object of the present invention is to provide a thin film deposition machine and a magnetic field adjustment device capable of adjusting the magnetic field distribution, which mainly include a reaction chamber, a carrier plate, a target, a back plate, a magnetic device, a fixing unit and At least one shielding unit. The back plate is connected to the reaction chamber and forms an accommodating space between the two. The carrier plate and the target material are located in the accommodating space, wherein the target material is arranged on one surface of the back plate, and the magnetic device is located on the other surface of the back plate. The fixing unit is located between the magnetic device and the back plate, and the shielding unit is arranged in the installation space of the fixing unit and used to shield part of the magnetic field generated by the magnetic device to adjust the magnetic field distribution formed by the magnetic device in the accommodating space.

In order to achieve the above objective, the present invention proposes a thin film deposition machine with adjustable magnetic field distribution, including: a reaction chamber, including an accommodating space; a carrier plate, located in the accommodating space, and used to carry at least one substrate; A target is connected to the accommodating space of the reaction chamber, and includes a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target, and the first surface of the target The surface faces the carrier plate; a magnetic device located in the direction of the second surface of the target material; a fixing unit located between the magnetic device and the target material and including at least one installation space; and at least one shielding unit arranged in the fixing unit In the setting space, the shielding unit is located between part of the magnetic device and part of the target material, and shields part of the magnetic field generated by the magnetic device, wherein the shielding unit includes a conductive material.

The present model provides a magnetic field adjustment device suitable for a thin film deposition machine, including: a target material, including a first surface and a second surface, wherein the first surface and the second surface are two opposite sides of the target material Surface; a magnetic device, located in the direction of the second surface of the target; a fixing unit, located between the magnetic device and the target, and including at least one installation space; and at least one shielding unit for setting the fixing unit In the space, the shielding unit is located between part of the magnetic device and part of the target, and shields part of the target and part of the magnetic device, wherein the shielding unit includes a conductive material.

The thin film deposition machine and the magnetic field adjustment device capable of adjusting the magnetic field distribution include a back plate including a first surface and a second surface, the first surface of the back plate is connected to the second surface of the target, and the fixing unit is Set on the second surface of the backboard.

In the thin film deposition machine and the magnetic field adjusting device capable of adjusting the magnetic field distribution, the shielding unit includes a plurality of grooves or a plurality of perforations.

In the thin film deposition machine and the magnetic field adjusting device capable of adjusting the magnetic field distribution, the fixing unit is made of an insulating material.

In the thin film deposition machine and the magnetic field adjustment device capable of adjusting the magnetic field distribution, the fixing unit is a fixing bracket and includes a plurality of hollow parts.

Please refer to FIG. 1 and FIG. 2, which are respectively a three-dimensional cross-sectional schematic diagram, a side cross-sectional schematic diagram, and a top view of an embodiment of a magnetic field adjustment device of an embodiment of a thin film deposition machine capable of adjusting the magnetic field distribution. As shown in the figure, the thin film deposition machine 10 capable of adjusting the magnetic field distribution mainly includes a reaction chamber 11, a carrier plate 13, a target material 15, a magnetic device 17, at least one fixing unit 16 and a shielding unit 19. The target 15, the fixing unit 16, the magnetic device 17 and the shielding unit 19 are defined as a magnetic field adjustment device 100, as shown in FIG. 3.

The reaction chamber 11 has an accommodating space 12 for accommodating the carrier plate 13 and the target 15. The carrier plate 13 is used to carry at least one substrate 131, and the target 15 faces the carrier plate 13 and the substrate 131 it carries. Specifically, the reaction chamber 11 may be provided with a setting opening, for example, the setting opening is located above the reaction chamber 11, wherein the accommodating space 12 is connected to the outside through the setting opening. The target 15 can be set or covered on the opening of the reaction chamber 11 and connected to the accommodating space 12 of the reaction chamber 11 so that the target 15 and the reaction chamber 11 form a closed accommodating space 12.

The carrier plate 13 can be displaced relative to the target 15 and the distance between the carrier plate 13 and the target 15 can be changed. Specifically, the carrier plate 13 can be displaced in a direction away from the target material 15, and the substrate 131 can be transported into the reaction chamber 11 and placed on the carrier plate 13 through a robotic arm, or the carrier plate 13 can be placed on the carrier plate 13 through a mechanical mobile phone. The substrate 131 is transported to the outside of the reaction chamber 11. The carrier tray 13 can drive the supported substrate 131 to approach the target 15 so as to reduce the distance between the substrate 131 carried by the carrier tray 13 and the target 15 and deposit the substrate 131 on a thin film.

In the embodiment of the present invention, the thin film deposition machine 10 capable of adjusting the magnetic field distribution may be a physical vapor deposition chamber (PVD), and an electric field is applied to the accommodating space 12 during deposition, so that the neutral gas in the accommodating space 12 Atoms are impacted by electrons to form charged gas ions. A bias voltage is applied to the target 15 and the carrier plate 13, so that the gas ions collide with the target 15 and generate a small amount of target particles. The target particles generated by the impact are attracted by the bias on the carrier plate 13 and deposited on the surface of the substrate 131 to form a thin film on the surface of the substrate 131.

The target 15 includes a first surface 151 and a second surface 153. The first surface 151 and the second surface 153 are two opposite surfaces on the target 15. The first surface 151 faces the carrier plate 13 and/or the substrate 131, for example, the appearance of the target material 15 is approximately disc-shaped, the first surface 151 is the lower surface of the target material 15 and the second surface 153 is the upper surface of the target material 15. In order to increase the probability of plasma gas atom ionization, a magnetic device 17 can be provided on the second surface 153 of the target 15, wherein the magnetic device 17 will form a magnetic field in the accommodating space 12 on the first surface 151 side of the target 15. The charged particles in the accommodating space 12 are displaced in a spiral manner, and the moving path of the charged particles and the probability of hitting neutral gas atoms are increased. In addition, the magnetic device 17 can be connected to a rotating shaft 171, and the magnetic device 17 can be driven to rotate relative to the target 15 through the rotating shaft 171 to improve the uniformity of the film deposited on the surface of the substrate 131.

The arrangement of the permeable magnetic device 17 can increase the probability of plasma gas atom ionization, thereby increasing its sputtering rate and controlling the uniformity of the deposited film. However, the magnetic device 17 is usually composed of a plurality of magnets, and the distribution of the magnetic field can only be adjusted through the arrangement or position of the magnets, thereby changing the uniformity of the film deposited on the surface of the substrate 131. Therefore, the above method of adjusting the magnetic field distribution is extremely limited, and the magnetic field generated by the magnetic device 17 cannot be fine-tuned, resulting in the inability to effectively improve the uniformity of the thickness of the film deposited on the surface of the substrate 131.

For this reason, the present invention proposes a thin film deposition machine 10 with adjustable magnetic field distribution. At least one fixing unit 16 is mainly provided on the second surface 153 side of the target 15, wherein the fixing unit 16 is located between the magnetic device 17 and the target 15. And there is at least one setting space 162. Specifically, the fixing unit 16 is made of an insulating material and will not block the magnetic force generated by the magnetic device 17. The fixing unit 16 can be directly arranged on the second surface 153 of the target 15, and a setting space 162 is formed between the fixing unit 16 and the second surface 153 of the target 15.

At least one shielding unit 19 is arranged between part of the magnetic device 17 and part of the target material 15, wherein the shielding unit 19 is made of conductive material. Specifically, the shielding unit 19 can be arranged in the installation space 162 of the fixing unit 16, and part of the magnetic field or magnetic force generated by the magnetic device 17 can be shielded through the shielding unit 19.

Through the setting of the shielding unit 19, the magnetic force of a part of the magnetic device 17 can be shielded, so as to reduce the size of the magnetic field of the magnetic device 17 on the first surface 151 side of the target 15 and/or a part of the accommodating space 12, and fine-tune the magnetic device 17 The magnetic field distribution formed in the accommodating space 12.

The setting of the fixing unit 16 facilitates the user to set at least one shielding unit 19 between part of the target 15 and part of the magnetic device 17, and use the shielding unit 19 to shield part of the magnetic field generated by the magnetic device 17. In addition, it is also convenient for the user to take out the shielding unit 19 from the installation space 162, or adjust the position of the shielding unit 19 in the installation space 162 to change the magnetic field area shielded by the shielding unit 19, and quickly adjust the accommodating space 12 Magnetic field distribution.

In an embodiment of the present invention, the fixing unit 16 may be plate-shaped, as shown in FIGS. 1 and 6. Specifically, a connecting cavity 18 can be provided above the reaction chamber 11, wherein the magnetic device 17, the fixing unit 16, and the shielding unit 19 are located in the connecting cavity 18, and the second surface 153 of the target 15 is connected to the connecting cavity. The space of the body 18. For example, the fixing unit 16 can be fixed on the inner surface of the connecting cavity 18, and a setting space 162 is formed between the fixing unit 16, the target 15 and the inner surface of the connecting cavity 18, as shown in FIG. In different embodiments, the fixing unit 16 can also be directly arranged or fixed on the second surface 153 of the target material 15, and an arrangement space 162 is formed between the fixing unit 16 and the target material 15, as shown in FIG. 6.

In another embodiment of the present invention, as shown in FIGS. 3 and 7, the fixing unit 16 may be a fixing bracket, wherein the fixing unit 16 includes a plurality of hollow parts 161. An installation space 162 is formed between the fixing unit 16 and the target 15, and the shielding unit 19 is installed in the installation space 162.

By fine-tuning the magnetic field distribution of the magnetic device 17 on the first surface 151 side of the target 15 and/or in the accommodating space 12, the thickness of the film deposited on the surface of the substrate 131 can be changed, and the thickness of the film deposited on the surface of the substrate 131 can be increased The uniformity (U%) of, for example, can make the uniformity of the film on the surface of the substrate 131 less than 1%. The following embodiments will illustrate the detailed implementation method and related experimental data.

In an embodiment of the present invention, as shown in FIG. 4, the shielding unit 19 may be plate-shaped. In another embodiment of the present invention, as shown in FIG. 5, the shielding unit 19 of the present invention has a body portion 190, at least one perforation 192 and/or at least one groove 194, wherein the body portion 190 of the shielding unit 19 and the perforation The shielding effects of the 192 and the groove 194 on the magnetic force generated by the magnetic device 17 are different. Therefore, the magnetic force generated by the magnetic device 17 can be shielded by the shielding unit 19 having the perforation 192 and/or the groove 194, and the magnetic field distribution formed by the magnetic device 17 in the accommodating space 12 can be further fine-tuned.

In an embodiment of the present invention, as shown in FIG. 2, a blocking member 111 may be provided in the accommodating space 12 of the reaction chamber 11, wherein one end of the blocking member 111 is connected to the reaction chamber 11, and the other end of the blocking member 111 is An opening 112 is formed. The carrier plate 13 can approach the target 15 and enter or contact the opening 112 formed by the stopper 111. The reaction chamber 11, the carrier plate 13, the target 15 and the stopper 111 are separated in the accommodating space 12 A reaction space 121 is exited, and the substrate 131 on the carrier plate 13 is deposited in the reaction space 121. In addition, the size of the magnetic field and the distribution of the magnetic field in each area in the reaction space 121 are fine-tuned through the shielding unit 19 to form a thin film with a uniform thickness on the surface of the substrate 131.

In an embodiment of the present invention, the shielding unit 19 can be directly arranged on the second surface 153 of the target 15 and electrically connected to the target 15, wherein the target 15 is not electrically connected to the reaction chamber 11. In another embodiment of the present invention, the shielding unit 19 may not be directly connected to the target 15 and may be grounded through a grounding wire or a grounding unit.

In addition, the number of the shielding units 19 provided on the second surface 153 side of the target 15 can be plural, and they can be arbitrarily arranged on the fixing unit 16 of the second surface 153 of the target 15. In addition, the area or shape of each shielding unit 19 may be different, and the shielding structure of any shape may be arranged on the second surface 153 of the target 15.

In an embodiment of the present invention, the perforations 192 and/or the grooves 194 arranged on the second surface 153 of the target 15 have different density or area, as shown in FIG. 5.

In an embodiment of the present invention, as shown in FIG. 7, the magnetic field adjustment device 100 and/or the reaction chamber 11 may include a back plate 113, wherein the back plate 113 includes a first surface 1131 and a second surface 1133. The first surface 1131 of the plate 113 is connected to the second surface 153 of the target 15, and the fixing unit 16 and/or the shielding unit 19 are arranged on the second surface 1133 of the back plate 113 or in the direction of the second surface 1133. In addition, at least one groove may be provided on the second surface 1133 of the back plate 113 or the second surface 153 of the target 15, wherein the shielding unit 19 is arranged in the groove in a similar inlaid manner, and the fixing unit 16 covers the recess. Slot and shielding unit 19.

Please refer to FIG. 8, which is a flow chart of the deposition method of the novel thin film deposition machine capable of adjusting the magnetic field distribution. Please refer to FIGS. 1 and 2 together. First, a first substrate 133 is placed on the carrier plate 13 of the thin film deposition machine 10 with an adjustable magnetic field distribution, as shown in step 21. Specifically, the first substrate 133 can be placed on the carrier plate 13 through a robot arm through the inlet and outlet ports 115 of the reaction chamber 11, and then the carrier plate 13 will drive the first substrate 133 to move in the direction of the target 15, and A reaction space 121 is formed between the reaction chamber 11, the stopper 111, the target 15 and the carrier plate 13.

A thin film is deposited on the first substrate 133 through the thin film deposition machine 10 to form a thin film on the surface of the first substrate 133, as shown in step 23. Specifically, an electric field may be applied to the gas atoms in the reaction space 121 to generate charged gas ions. A bias is applied to the target 15 and the carrier plate 13 so that the charged gas ions collide with the target 15 to generate target particles. The target particles are attracted by the bias voltage on the carrier plate 13 and deposited on the first substrate 133. A thin film is formed on the surface of the first substrate 133.

The thickness of the film deposited on the surface of the first substrate 133 is measured, as shown in step 25. Specifically, the film thickness of each area on the surface of the first substrate 133 can be measured to obtain the uniformity of the film.

As shown in FIG. 9, it is a distribution diagram of the thickness of the film deposited on the surface of the substrate by the thin film deposition machine of the prior art, or the distribution diagram of the thickness of the film deposited on the surface of the first substrate by the thin film deposition machine and the deposition method of the present invention , Wherein the film resistance (RsAvg) deposited on the surface of the substrate 131 or the first substrate 133 is about 47.4 ohm/square (Ω/sq), and the uniformity (Rs 2Avg-U%) is 3.47%.

In practical applications, the shielding unit 19 can be installed in the installation space 162 formed by the fixing unit 16 between part of the magnetic device 17 and part of the target 15 according to the thickness distribution of the film on the first substrate 133 as shown in FIG. 9 Inside, part of the magnetic field generated by the magnetic device 17 is shielded through the shielding unit 19, wherein the magnetic field in the reaction space 121 below the shielding unit 19 is relatively small, as shown in step 27.

In practical applications, the substrate 131 and the target 15 can be divided into a plurality of regions, wherein the plurality of regions on the target 15 correspond to the plurality of regions of the substrate 131 respectively. Then, according to the film thickness of each area on the substrate 131, the shielding unit 19 is selected to be disposed in the setting space 162 corresponding to the fixing unit 16 to adjust the film thickness of each area on the substrate 131.

In an embodiment of the present invention, the thickness of the film on the first substrate 133 can be divided into multiple thicknesses. For example, the first area of the first substrate 133 has a first thickness, and the second area of the first substrate 133 has a thickness. The second thickness, wherein the first thickness is greater than the second thickness. The shielding unit 19 is then arranged in the installation space 162 of the fixing unit 16 between the magnetic device 17 and the target 15 corresponding to the first area and/or the first thickness to shield the magnetic field corresponding to the first area, for example, the shielding unit 19 The target material 15 is set at the vertically extending position of the first region having the first thickness.

After completing the above adjustment steps, a second substrate 135 can be placed on the carrier plate 13 and thin film deposition is performed on the second substrate 135.

As shown in Figure 10, it is a distribution diagram of the thickness of the film deposited on the surface of the second substrate 135 by the new type of film deposition machine with adjustable magnetic field distribution. The film resistance (RsAvg) deposited on the surface of the second substrate 135 is about 45.8 ohms. /Square (Ω/sq), and the uniformity (Rs 2Avg-U%) is 0.91%. From the film thickness distribution shown in Figures 9 and 10, it can be clearly seen that the thin film deposition machine 10 with adjustable magnetic field distribution and its deposition method of the present invention can effectively improve the deposition on the surface of the substrate 131 or the second substrate 135. The film uniformity.

As shown in FIG. 11, it is a curve diagram of uniformity U% and thin film resistance of the thin film deposition machine 10 with adjustable magnetic field distribution on different substrates 131 or second substrate 135 in batches, as shown in the figure. After the thin film deposition machine 10 with adjustable magnetic field distribution is adjusted by the magnetic field distribution, the resistance of the thin film deposited on the surface of the substrate 131 or the second substrate 135 can be maintained at 44 to 46 ohms/square (Ω/sq) under the same process conditions. ), and the uniformity of the film is less than 1%, which indicates that the film deposition machine and the deposition method of the present invention can continuously and repeatedly deposit a film of uniform thickness on the surface of the substrate 131.

The above is only one of the preferred embodiments of the present invention, and is not intended to limit the scope of implementation of the present invention, that is, all the equivalent changes and changes in the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention Modifications should be included in the scope of the patent application for this new model.

10: Thin film deposition machine with adjustable magnetic field distribution 100: Magnetic field adjustment device 11: Reaction chamber 111: stop 112: opening 113: Backplane 1131: first surface 1133: second surface 115: inlet and outlet 12: accommodating space 121: Reaction Space 13: Carrier plate 131: Substrate 133: The first substrate 135: second substrate 15: Target 151: First Surface 153: Second Surface 16: fixed unit 161: Hollow 162: Setting Space 17: Magnetic device 171: Shaft 18: Connect the cavity 19: Shading unit 190: body part 192: Piercing 194: Groove

[Fig. 1] is a schematic diagram of a three-dimensional cross-sectional view of an embodiment of a thin film deposition machine capable of adjusting the distribution of a magnetic field.

[Fig. 2] is a schematic side sectional view of an embodiment of a thin film deposition machine with adjustable magnetic field distribution.

[Figure 3] is a top view of an embodiment of the novel magnetic field adjustment device.

[Fig. 4] is a plan view of an embodiment of the target material and the shielding unit of the novel magnetic field adjustment device.

[Fig. 5] is a top view of another embodiment of the target and the shielding unit of the novel magnetic field adjustment device.

[Figure 6] is a schematic cross-sectional view of an embodiment of the target, the shielding unit and the fixing unit of the novel magnetic field adjustment device.

[Fig. 7] is a schematic cross-sectional view of another embodiment of the target, the shielding unit and the fixing unit of the novel magnetic field adjustment device.

[Fig. 8] is a flow chart of an embodiment of the deposition method of the novel thin film deposition machine with adjustable magnetic field distribution.

[Figure 9] is a distribution diagram of the thickness of the thin film deposited on the surface of the substrate by the thin film deposition machine of the prior art.

[Figure 10] is the distribution diagram of the thickness of the film deposited on the surface of the substrate by the new film deposition machine with adjustable magnetic field distribution.

[Figure 11] is a graph of film uniformity and film resistance of a new type of film deposition machine with adjustable magnetic field distribution on different substrates in batches.

10: Thin film deposition machine with adjustable magnetic field distribution

11: Reaction chamber

12: accommodating space

13: Carrier plate

131: Substrate

133: The first substrate

135: second substrate

15: Target

151: First Surface

153: Second Surface

16: fixed unit

162: Setting Space

17: Magnetic device

171: Shaft

18: Connect the cavity

19: Shading unit

Claims (10)

A thin film deposition machine with adjustable magnetic field distribution, including: A reaction chamber, including an accommodating space; A carrier tray located in the accommodating space and used for carrying at least one substrate; A target connected to the accommodating space of the reaction chamber, and including a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target, and The first surface of the target material faces the carrier plate; A magnetic device located in the direction of the second surface of the target and used to form a magnetic field in the accommodating space; A rotating shaft connected to the magnetic device and driving the magnetic device to rotate relative to the target; A fixing unit, located between the magnetic device and the target, and including at least one setting space; and At least one shielding unit is arranged in the installation space of the fixing unit, so that the shielding unit is located between part of the magnetic device and part of the target, and shields part of the magnetic field generated by the magnetic device, wherein the shielding unit includes a Conductive material. The thin film deposition machine with adjustable magnetic field distribution according to claim 1, comprising a back plate including a first surface and a second surface, the first surface of the back plate is connected to the second surface of the target, The fixing unit is arranged on the second surface of the back plate. The thin film deposition machine capable of adjusting the magnetic field distribution according to claim 1, wherein the shielding unit includes a plurality of grooves or a plurality of perforations. The thin film deposition machine capable of adjusting the magnetic field distribution according to claim 1, wherein the fixing unit is made of an insulating material. The thin film deposition machine capable of adjusting the magnetic field distribution according to claim 1, wherein the fixing unit is a fixing bracket and includes a plurality of hollow parts. A magnetic field adjustment device suitable for a thin film deposition machine, including: A target material includes a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target material; A magnetic device located in the direction of the second surface of the target and used to form a magnetic field in the direction of the first surface of the target; A rotating shaft connected to the magnetic device and driving the magnetic device to rotate relative to the target; A fixing unit, located between the magnetic device and the target, and including at least one setting space; and At least one shielding unit is arranged in the installation space of the fixing unit, so that the shielding unit is located between part of the magnetic device and part of the target, and shields part of the magnetic field generated by the magnetic device, wherein the shielding unit Including a conductive material. The magnetic field adjustment device according to claim 6, comprising a back plate including a first surface and a second surface, the first surface of the back plate is connected to the second surface of the target, and the fixing unit is provided On the second surface of the backplane. The magnetic field adjustment device according to claim 6, wherein the shielding unit includes a plurality of grooves or a plurality of perforations. The magnetic field adjustment device according to claim 6, wherein the fixing unit is made of an insulating material. The magnetic field adjustment device according to claim 6, wherein the fixing unit is a fixing bracket and includes a plurality of hollow parts.

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