TWM615058U - Plasma cleaning device - Google Patents

Abstract

The presentdisclosure relates to a plasma cleaning device which has a chamber, a radio frequency electrode, a stage, an electrode,a gas dispersion ringand a separation ring.The gas dispersion ring is connected to the chamber through the locking component, and the separation ring is lower than the gas dispersion ring, wherein the separation ring and the chamber surround a separation space, and the locking component is located in the separation space. The separating ring and the stage also define a reaction space, and the locking component is restricted outside the reaction space..During the cleaning process of the plasma cleaning device, argon ions hit the aluminum substrate on the stage, and the separating ring can shield the locking component to prevent part of the sputtered aluminum from being attracted to the locking component.

Description

Plasma cleaning device

The present invention relates to a plasma cleaning device, in particular to a plasma cleaning device that shields a lock piece through a partition ring to reduce dirt being adsorbed on the lock piece.

In the semiconductor plasma cleaning process, the plasma cleaning device generates plasma, and the gas dispersion ring provides argon gas and strikes the wafer after dissociation to strike out the dirt on the wafer surface to achieve the effect of wafer cleaning. . However, part of the dirt is suspended in the cavity, and may fall back to the surface of the wafer, and follow the wafer for subsequent processes, such as a metal coating process. If the dirt falls on the wiring area of the wafer in the future, the wire will not be able to conduct, thereby reducing the yield of the product.

One way to improve the above-mentioned problems is to replace the wafer with an aluminum substrate in a fixed cycle. The wafer is impacted by argon ions. The sputtered aluminum can react with the dirt remaining in the cavity and adhere to the shutter of the cavity to reduce The probability of dirt falling back to the wafer surface.

However, the gas dispersion ring is usually fixed to the cavity by a fastener (for example, a screw). The screw grounded through the cavity can easily absorb metal ions (aluminum ions), causing dirt to adhere to the surface of the screw, and the dirt may fall off and cause damage. Drop onto the wafer. Since screws are usually made of stainless steel, they cannot be effectively surface treated, so it is difficult to solve the problem of dirt.

Therefore, in order to overcome the shortcomings of the conventional technology, an embodiment of the present invention provides a plasma cleaning device, which can reduce the probability of dirt adhering to the fasteners (for example, screws), and prevent the dirt from peeling off and falling onto the wafer The surface, in this way, can increase the cleanliness of the wafer.

Based on at least one of the foregoing objectives, the plasma cleaning device provided by the embodiment of the present invention includes a cavity, a radio frequency electrode, a carrier, an electrode, a gas dispersion ring, and a separation ring. The cavity has an accommodating space and a top of the cavity, and the radio frequency electrode is connected to the top of the cavity. The carrier is located in the accommodating space and is used to carry at least one substrate, and the electrode is connected to the carrier. The gas dispersion ring is connected to the cavity through at least one fastener, wherein the gas dispersion ring has a plurality of pores for the process gas to pass into the containing space. The separation ring is connected to the gas dispersion ring, wherein the separation ring and the carrier define the reaction space, and the separation ring is located between the locking member and the reaction space to limit the locking member outside the reaction space, wherein the gas dispersion ring has a gas hole located Response space.

Based on at least one of the foregoing objectives, the plasma cleaning device provided by the embodiment of the present invention includes a cavity, a radio frequency electrode, a carrier, an electrode, a gas dispersion ring, and a separation ring. The cavity has an accommodating space and a top of the cavity, and the radio frequency electrode is connected to the top of the cavity. The gas dispersion ring is connected to the cavity through at least one fastener, wherein the gas dispersion ring has a plurality of pores for the process gas to pass into the containing space. The partition ring is lower than the gas dispersion ring, wherein the partition ring and the cavity surround the partition space, the locking member is located in the partition space, and the pores of the gas dispersion ring are restricted outside the partition space.

Based on at least one of the foregoing objectives, the connecting portion of the separating ring of the plasma cleaning device provided by the embodiment of the present invention has vertical sides, and the sides are vertical to the bottom, and the vertical extension line of the side surface and the horizontal extension line of the carrier define the reaction Space, and the partition ring is located between the locking member and the reaction space.

At least one of the above-mentioned objectives, the horizontally extending line and the cavity at the bottom of the separating ring of the plasma cleaning device provided by the embodiment of the present invention surround the separating space, and the locking member is located in the separating space.

Optionally, the separating ring further includes a connecting portion, a side surface and a bottom portion, wherein the connecting portion is connected to the gas dispersion ring, the side surface is connected to the connecting portion, the bottom portion is connected to the side surface, and the connecting portion and the bottom portion are opposite to each other. The side of the partition ring is used to prevent the dirt from the self-locking member from falling onto the surface of the substrate, and the bottom is used to receive the dirt.

Optionally, there is a first distance between one end of the bottom of the partition ring and the side wall of the cavity, and there is a second distance between the locking member and the side wall of the cavity, wherein the first distance is smaller than the second distance.

Optionally, the surface of the gas dispersion ring further includes a plurality of convex portions, adjacent to the reaction space, for attaching the dirt of the cavity.

Optionally, the surface of the gas dispersion ring is subjected to roughening treatment and non-conductive treatment, so that the surface forms an uneven surface to adhere to the dirt of the cavity.

Optionally, the roughening treatment is a chemical roughening treatment, a mechanical roughening treatment or an organic solvent roughening treatment. The non-conductive treatment is an anode treatment. .

Optionally, the surface roughness (Ra) of the surface of the gas dispersion ring is 8-12 microns (μm).

Optionally, the plasma cleaning device further includes a vacuum pumping system connected to the accommodating space of the cavity for pumping out the fluid in the accommodating space.

Optionally, the plasma cleaning device further includes a first shutter located in the accommodating space and adjacent to the top of the cavity, and the first shutter has a plurality of first openings to form an uneven bottom surface.

In short, the plasma cleaning device provided by the embodiment of the present invention shields the locking member between the gas dispersion ring and the cavity through the separating ring, so as to reduce the probability of dirt adhering to the locking member. Furthermore, the separating ring can also contain The dirt dropped from the locking device can increase the cleanliness of the wafer. Therefore, it has an advantage in the market (for example, semiconductor) that has a demand for plasma cleaning devices and processes.

In order to make the above and other objects, features and advantages of the present invention more obvious and understandable, detailed descriptions are made as follows in conjunction with the accompanying drawings.

1: Plasma cleaning device

11: Cavity

111: top of cavity

113: Vacuum pumping system

13: Stage

131: Cooling line

15: Gas dispersion ring

151: lock firmware

153: Convex

155: Stoma

17, 27, 37: Separating ring

171, 271, 371: connecting part

173, 273, 373: side

175, 275, 375: bottom

177: Separation ring lock firmware

19: The first shutter

191: The first opening

193: The first closed part

195: Groove

d1: first distance

d2: second distance

E1: RF electrode

E2: Electrode

L1: Vertical extension line

L2, L3: horizontal extension line

S: accommodating space

S1: reaction space

S2: Separate space

W: substrate

Fig. 1 is a schematic diagram of a plasma cleaning device according to an embodiment of the present invention.

Fig. 2 is a partial schematic diagram of a plasma cleaning device according to an embodiment of the present invention.

Fig. 3 is a partial schematic diagram of a plasma cleaning device according to another embodiment of the present invention.

Fig. 4 is a partial schematic diagram of a plasma cleaning device according to another embodiment of the present invention.

Fig. 5 is a partial schematic diagram of a plasma cleaning device according to another embodiment of the present invention.

Fig. 6 is a partial schematic diagram of a plasma cleaning device according to still another embodiment of the present invention.

Fig. 7 is a partial schematic bottom view of a gas dispersion ring according to still another embodiment of the present invention.

In order to fully understand the purpose, features and effects of the present invention, a detailed description of the present invention is given with the following specific embodiments and accompanying drawings. The description is as follows.

First, please refer to FIGS. 1 and 2. FIG. 1 is a schematic diagram of a plasma cleaning device according to an embodiment of the present invention, and FIG. 2 is a partial schematic diagram of a plasma cleaning device according to an embodiment of the present invention. The plasma cleaning device 1 provided by the present invention includes a cavity 11, a radio frequency electrode E1, a carrier 13, an electrode E2, a gas dispersion ring 15, a separation ring 17 and a first shield 19. The cavity 11 has a cavity top 111 and an accommodating space S, and the material of the cavity top 111 is, for example, but not limited to ceramics.

A carrier 13 is provided in the accommodating space S of the cavity 11, and the carrier 13 is used to carry at least one substrate W. The plasma cleaning device 1 may also be provided with a cooling line 131 connected to the carrier 13 (for example, arranged inside the carrier 13) to adjust the temperature of the substrate W.

In the pre-clean process of the semiconductor, the substrate W is a wafer. Dirt on the wafer can be bombarded by the plasma in the pre-cleaning process, while the dirt and by-products (for example, aluminum oxide, silicon dioxide, silicon nitride, carbon, organic compounds, polluting gases, etc.) Attached or suspended in the cavity 11. When the plasma cleaning device 1 is cleaned, a metal substrate (for example, an aluminum substrate) is used as the substrate W, and aluminum can be sputtered out by the plasma and react with dirt and by-products or cause dirt and by-products Attaches to the sputtered aluminum.

Specifically, the stage 13 is connected to the electrode E2, and the electrode E2 is located above the stage 13 so that the stage 13 carries the substrate W through the electrode E2. The top 111 of the cavity is connected to the radio frequency electrode E1, and the radio frequency electrode E1 and the electrode E2 can generate a potential difference in the accommodating space S of the cavity 11.

The gas dispersion ring 15 is connected to the cavity 11, so that the process gas (for example, argon gas) can enter the accommodating space S of the cavity 11 through the plurality of pores 155 of the gas dispersion ring 15.

When the plasma cleaning device 1 is cleaned, the radio frequency electrode E1 and the electrode E2 generate a potential difference in the cavity 11 and enable the electrons to have energy. When electrons hit the argon gas passing into the cavity 11, it can make The argon gas is dissociated into argon ions, and high-density plasma is generated in the cavity 11. After the plasma in the cavity 11 is accelerated, the argon ions hit the aluminum substrate and the aluminum is sputtered out to react with dirt and by-products or make dirt and by-products adhere to the sputtered aluminum, and It can be captured by the first shutter 19.

The first shutter 19 is located in the accommodating space S and is adjacent to the top portion 111 of the cavity. The first shutter 19 has a plurality of first openings 191 to form an uneven bottom surface, and the dirt attached to the aluminum can be first The uneven bottom surface of the shutter 19 is captured to reduce the probability of being suspended in the accommodating space S of the cavity 11. Specifically, the first shutter 19 has a plurality of first openings 191 and a plurality of first closing portions 193, and the first closing portion 193 is adjacent to the cavity top 111 and is opposite to the first opening 191, so that the 19 forms a plurality of grooves 195. The first opening 191 of the groove 195 faces the direction of the substrate W to accommodate the aluminum that is sputtered and carries dirt.

Since the first shutter 19 has an uneven bottom surface, its surface area is larger than the surface area of the flat bottom surface, that is, the surface area for adsorbing dirt is larger, so the frequency of replacing the first shutter 19 can be reduced, so that the plasma cleaning device 1 can be extended The cleaning cycle. The material of the first shutter 19 can be quartz, ceramic, silicon carbide or alumina, but the present invention is not limited thereto.

The uneven bottom surface or groove 195 of the first shutter 19 may be coated with a chemical material, where the chemical material may be yttrium oxide, aluminum oxide or ceramic. The purpose of coating chemical materials on the uneven bottom surface or groove 195 is to create an uneven surface (for example, uneven surface) to increase the surface area of the uneven bottom surface or groove 195, so that it can be easier to catch or catch dirt. aluminum.

The gas dispersion ring 15 is connected to the cavity 11 through at least one locking member 151, and the locking member 151 is, for example, but not limited to, a screw. In one embodiment, the gas dispersion ring 15 is locked by a fastener 151 At the top of the cavity 111. In other embodiments, the gas dispersion ring 15 is locked to the side wall of the cavity 11 through a fastener 151.

The separating ring 17 is connected to the gas dispersion ring 15, and the separating ring 17 is locked to the cavity 11 through the separating ring fastener 177. Specifically, the partition ring 17 is an annular ring body and is lower than the gas dispersion ring 15. Taking the vertical extension line L1 of the smallest diameter of the partition ring 17 as a boundary, and the horizontal extension line L2 of the top of the carrier 13 as a boundary, the partition ring 17 and the carrier 13 define the reaction space S1. Furthermore, with the horizontal extension line L3 of the bottom 175 of the partition ring 17 as the boundary, and the side wall of the cavity 11 as the boundary, the partition ring 17 and the cavity 11 surround the partition space S2.

The top surface of the separating ring 17 and the locking member 151 are located on the same side of the gas dispersion ring 15 (for example, in FIG. 1, the top surfaces of the separating ring 17 and the locking member 151 are located on the lower side of the gas dispersion ring 15) to pass The partition ring 17 shields the fastener 151, reducing the probability of dirt in the reaction space S1 adhering to the fastener 151.

Specifically, the separating ring 17 is located between the locking member 151 and the reaction space S1 to restrict the locking member 151 outside the reaction space S1, and the air hole 155 of the gas dispersion ring 15 is also located in the reaction space S1 to provide process gas to Reaction space S1. That is, the locking member 151 is located in the separation space S2, and the air hole 155 of the gas dispersion ring 15 is restricted outside the separation space S2.

In one embodiment, the separating ring 17 further includes a connecting portion 171, a side surface 173, and a bottom portion 175, wherein the connecting portion 171 is connected to the gas dispersion ring 15, the side surface 173 is connected to the connecting portion 171, the bottom portion 175 is connected to the side surface 173, and the connecting portion 171 is connected to the bottom 175 are opposite to each other, and the side surface 173 is perpendicular to the side wall of the cavity 11, and can be used to prevent dirt in the reaction space S1 from adhering to the locking member 151. Specifically, the connecting portion 171 is perpendicular to the side surface 173, and the side surface 173 is perpendicular to the bottom portion 175. Furthermore, when a small amount of dirt adheres to the fastener 151, The side surface 173 of the partition ring 17 can also be used to prevent dirt from the self-locking member 151 from falling onto the surface of the substrate W, and the bottom 175 of the partition ring 17 can be used to receive dirt.

Please refer to FIG. 3, which is a partial schematic diagram of a plasma cleaning device according to another embodiment of the present invention. As shown in FIG. 3, there is a first distance d1 between one end of the bottom 175 of the partition ring 17 and the side wall of the cavity 11, and there is a second distance d2 between the locking member 151 and the side wall, wherein the first distance d1 is smaller than the second distance d1. The distance d2 is to make the separation ring 17 better separate the fasteners 151 and make it easier for the separation ring 17 to receive the dirt peeled off from the fasteners 151. In other embodiments, the first distance d1 may also be equal to the second distance d2. In other embodiments, the first distance d1 may also be 0, so that the separated space S2 almost forms a closed space.

In other embodiments, the side surface 173 of the separating ring 17 may not be perpendicular to the side wall of the cavity 11. Please refer to FIG. 4, which is a partial schematic diagram of a plasma cleaning device according to another embodiment of the present invention. As shown in FIG. 4, the side surface 273 of the separating ring 27 is arc-shaped. Specifically, the separating ring 27 has a connecting portion 271, a side surface 273, and a bottom portion 275. The connecting portion 271 connects to the gas dispersion ring 15, the side surface 273 connects to the connecting portion 271, the bottom 275 connects to the side surface 273, and the connecting portion 271 and the bottom 275 are opposite to each other. . Similarly, the side surface 273 of the partition ring 27 can be used to prevent dirt in the reaction space S1 from adhering to the locking member 151. When a small amount of dirt is attached to the locking member 151, the side surface 273 of the partition ring 27 can also be used to prevent the dirt falling from the locking member 151 from falling onto the surface of the substrate W, and the bottom 275 of the partition ring 27 can be used for receiving Dirty.

In other embodiments, the separation ring 17 may not be connected to the gas dispersion ring 15. Please refer to FIG. 5. FIG. 5 is a partial schematic diagram of a plasma cleaning device according to another embodiment of the present invention. As shown in FIG. 5, the partition ring 37 is connected to the side wall of the cavity 11 through the partition ring fastener 177, and the gas dispersion ring 15 is connected to the top of the cavity 11 through the fastener 151. Specifically, the separating ring 37 has a connecting portion 371, a side surface 373, and a bottom portion 375. The connecting portion 371 connects the side wall of the cavity 11, and the side surface 373 and the connecting portion 371 are opposite to each other. Yes, the bottom 375 connects the side surface 373 and the connecting portion 371. Similarly, the side surface 373 of the partition ring 37 can be used to prevent dirt in the reaction space S1 from adhering to the locking member 151. When a small amount of dirt adheres to the locking member 151, the side surface 373 of the partition ring 37 can also be used to prevent the dirt from the locking member 151 from falling onto the surface of the substrate W, and the bottom 375 of the partition ring 37 can be used for receiving Dirty.

Different from the foregoing embodiment, the separating ring 37 is bounded by the vertical extension line L1 of the side surface 373 and the bottom 375, and is bounded by the side wall of the cavity 11, so that the separating ring 37 and the cavity 11 surround the separating space S2.

In one embodiment, the gas dispersion ring 15 is directly or indirectly connected to the top of the cavity 11 through the locking member 151. In other embodiments, the gas dispersion ring 15 may not be connected to the top of the cavity 11. Please refer to FIG. 6. FIG. 6 is a partial schematic diagram of a plasma cleaning device according to still another embodiment of the present invention. As shown in FIG. 6, the gas dispersion ring 15 is connected to the side wall of the cavity 11 through the fastener 151.

Next, please refer to FIG. 1, FIG. 2 and FIG. 7. FIG. 7 is a partial schematic bottom view of a gas dispersion ring according to still another embodiment of the present invention. As shown in FIGS. 1, 2 and 7, the gas dispersion ring 15 is an annular ring body, and the surface of the gas dispersion ring 15 further includes a plurality of convex portions 153 adjacent to the reaction space S1. The plurality of protrusions 153 make the surface of the adjacent reaction space S1 of the gas dispersion ring 15 uneven, so as to enhance the ability to adhere to the dirt of the cavity 11.

The surface of the gas dispersion ring 15 can also be subjected to roughening treatment and non-conductive treatment to form an uneven surface on the surface to further enhance the ability to adhere to the dirt of the cavity 11, wherein the roughening treatment can be a chemical roughening treatment, The mechanical roughening treatment or the organic solvent roughening treatment, and the non-conductive treatment may be anode treatment so that the surface roughness (Ra) of the surface of the gas dispersion ring 15 is 8-12 microns (μm).

The plasma cleaning device 1 may further include a vacuum pumping system 113 connected to the accommodating space S of the cavity 11 and used to extract fluid in the accommodating space S. The fluid is, for example, but not limited to, the cavity 11 before the cleaning process. The air contained within.

In summary, compared with the prior art, the technical effects of the plasma cleaning device according to the embodiment of the present invention are described as follows.

In the conventional technology, during the pre-cleaning process of the wafer, part of the dirt will adhere to the locking member between the gas dispersion ring and the cavity, and may fall back to the wafer surface, or even fall on the future wiring area of the wafer , Which will make the wire unable to conduct, thereby reducing the yield of the product. However, since the fasteners are usually stainless steel screws, it is difficult to perform effective surface treatment on them, so it is difficult to solve the problem of dirt. In contrast, the plasma cleaning device of the present invention can cover the locking member through the partition ring, and can further contain the dirt dropped from the locking member, so as to reduce the probability of wafer contamination.

The present invention has been disclosed in preferred embodiments above. However, those familiar with the art should understand that the above-mentioned embodiments are only used to describe the present invention and should not be interpreted as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the foregoing embodiments should be included in the scope of the present invention.

1: Plasma cleaning device

11: Cavity

111: top of cavity

113: Vacuum pumping system

13: Stage

131: Cooling line

15: Gas dispersion ring

151: lock firmware

17: Separating ring

19: The first shutter

E1: RF electrode

E2: Electrode

L1: Vertical extension line

L2, L3: horizontal extension line

S: accommodating space

S1: reaction space

W: substrate

Claims (10)

A plasma cleaning device includes: a cavity with an accommodating space and a top of the cavity; a radio frequency electrode connected to the top of the cavity; a carrier located in the accommodating space and used for carrying at least one substrate An electrode connected to the carrier; a gas dispersion ring connected to the cavity through at least one locking member, the gas dispersion ring having a plurality of pores for a process gas to pass into the accommodating space; and a separating ring connected to the A gas dispersion ring, wherein the separating ring includes a connecting portion, a side surface, and a bottom portion, the connecting portion is perpendicular to the side surface, and the side surface is perpendicular to the bottom, and a vertical extension line of the side surface and a horizontal extension line of the carrier A reaction space is defined, and the partition ring is located between the locking member and the reaction space to limit the locking member outside the reaction space, wherein the air hole of the gas dispersion ring is located in the reaction space. A plasma cleaning device includes: a cavity with an accommodating space and a top of the cavity; a radio frequency electrode connected to the top of the cavity; a carrier located in the accommodating space and used for carrying at least one substrate An electrode connected to the carrier; a gas dispersion ring connected to the cavity through at least one locking member, the gas dispersion ring having a plurality of pores for a process gas to pass into the containing space; and A partition ring is lower than the gas dispersion ring, wherein the partition ring includes a connecting portion, a side surface and a bottom, the connecting portion is perpendicular to the side surface, and the side surface is perpendicular to the bottom, wherein a level of the bottom of the partition ring The extension line and the cavity surround a partition space, the locking member is located in the partition space, and the air hole of the gas dispersion ring is restricted outside the partition space. The plasma cleaning device according to claim 1 or 2, wherein the connecting portion is connected to the gas dispersion ring, the side surface is connected to the connecting portion, the bottom portion is connected to the side surface, and the connecting portion and the bottom portion are opposite to each other, wherein the side surface It is used for preventing a dirt falling from the fastener from falling onto a surface of the substrate, and the bottom is used for receiving the dirt. The plasma cleaning device according to claim 3, wherein there is a first distance between one end of the bottom and a side wall of the cavity, and there is a second distance between the locking member and the side wall, wherein the first distance A distance is smaller than the second distance. The plasma cleaning device according to claim 1, wherein a surface of the gas dispersion ring further includes a plurality of protrusions adjacent to the reaction space for attaching a dirt of the cavity. The plasma cleaning device according to claim 1 or 2, wherein a surface of the gas dispersion ring is roughened and non-conductive, so that the surface forms an uneven surface to adhere to a dirt of the cavity. The plasma cleaning device according to claim 6, wherein the roughening treatment is a chemical roughening treatment, a mechanical roughening treatment or an organic solvent roughening treatment, and the non-conductive treatment is an anode treatment. The plasma cleaning device according to claim 6, wherein the surface roughness (Ra) of the surface of the gas dispersion ring is 8-12 microns (μm). The plasma cleaning device according to claim 1, further comprising a vacuum pumping system connected to the accommodating space of the cavity for pumping out a fluid in the accommodating space. The plasma cleaning device according to claim 1, further comprising a first shutter located in the accommodating space and adjacent to the top of the cavity, and the first shutter has a plurality of first openings to form an unevenness Underside.

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