TWM612412U - Wet processing apparatus - Google Patents
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- TWM612412U TWM612412U TW110201928U TW110201928U TWM612412U TW M612412 U TWM612412 U TW M612412U TW 110201928 U TW110201928 U TW 110201928U TW 110201928 U TW110201928 U TW 110201928U TW M612412 U TWM612412 U TW M612412U
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- 238000012545 processing Methods 0.000 title claims abstract description 74
- 239000012530 fluid Substances 0.000 claims abstract description 206
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000007921 spray Substances 0.000 claims abstract description 72
- 239000008367 deionised water Substances 0.000 claims abstract description 66
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 66
- 238000005507 spraying Methods 0.000 claims abstract description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 167
- 239000000243 solution Substances 0.000 claims description 85
- 229910052757 nitrogen Inorganic materials 0.000 claims description 80
- 229920006395 saturated elastomer Polymers 0.000 claims description 60
- 239000012159 carrier gas Substances 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 32
- 238000002347 injection Methods 0.000 claims description 31
- 239000007924 injection Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 25
- 238000004891 communication Methods 0.000 claims description 20
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000005188 flotation Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000001035 drying Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 4
- 150000003384 small molecules Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
Description
本揭露是有關於一種濕式處理技術,且特別是有關於一種濕式處理設備。The present disclosure relates to a wet treatment technology, and particularly relates to a wet treatment equipment.
以液體對製造物件進行例如清洗與蝕刻等濕式處理已廣泛地應用於電子製造產業中。舉例而言,利用單晶圓旋轉濕式蝕刻設備對晶圓進行蝕刻製程時,會經過單次或多次之酸性或鹼性蝕刻液的蝕刻或清洗液的清洗。在濕式處理過程中,不同酸性或鹼性處理液的轉換之間通常以去離子(DI)水來去除將晶圓上殘留之酸性或鹼性處理液。此外,於完成所有酸性或鹼性處理液的處理步驟後,亦需利用去離子水沖洗殘留在晶圓上的酸性或鹼性處理液。因此,每片晶圓在整個蝕刻製程所需之去離子水的使用量相當大。而且,在濕式處理期間,大部分的去離子水會因晶圓的高速旋轉而迅速的被甩出晶圓,導致去離子水的清洗效果有限。Wet processing such as cleaning and etching of manufactured objects with liquids has been widely used in the electronics manufacturing industry. For example, when a single wafer rotary wet etching equipment is used to perform an etching process on a wafer, it will go through a single or multiple etching with an acid or alkaline etching solution or cleaning with a cleaning solution. In the wet processing process, deionized (DI) water is usually used to remove the residual acid or alkaline processing liquid on the wafer between the conversion between different acidic or alkaline processing solutions. In addition, after all the processing steps of the acidic or alkaline treatment solution are completed, the remaining acidic or alkaline treatment solution on the wafer needs to be rinsed with deionized water. Therefore, the amount of deionized water required for each wafer in the entire etching process is quite large. Moreover, during wet processing, most of the deionized water will be quickly thrown out of the wafer due to the high-speed rotation of the wafer, resulting in a limited cleaning effect of the deionized water.
在水資源有限的情況下,已迫使各大半導體廠積極進行去離子水的使用減量與回收再利用。因此,亟需一種可兼顧濕式處理效果的提升與去離子水之使用量的減少的濕式處理技術。In the case of limited water resources, major semiconductor factories have been forced to actively reduce the use of deionized water and recycle. Therefore, there is an urgent need for a wet treatment technology that can balance the improvement of the wet treatment effect and the reduction of the usage of deionized water.
因此,本揭露之一目的就是在提供一種濕式處理設備,其可以輪流對物件噴灑去離子水,以及包含去離子水、水蒸汽、與揮發性流體之混合流體的霧狀小分子。水蒸汽小分子可減少濕式處理時去離子水的使用量,並可提升清洗效果。此外,揮發性流體的揮發可提供殘留在物件上之處理液與微粒擴散與移動動能,而可縮短清洗時間,進一步降低去離子水的使用量,並可提升去除效率,更可避免破壞物件,進而可降低產品缺陷,提升良率。Therefore, one of the objectives of the present disclosure is to provide a wet treatment equipment that can spray deionized water on objects in turn, and mist-like small molecules containing a mixed fluid of deionized water, water vapor, and volatile fluid. Small water vapor molecules can reduce the amount of deionized water used in wet processing and improve the cleaning effect. In addition, the volatilization of volatile fluids can provide kinetic energy for the diffusion and movement of processing liquids and particles remaining on the object, which can shorten the cleaning time, further reduce the amount of deionized water used, and improve the removal efficiency, and can prevent damage to the object. In turn, product defects can be reduced and yield can be improved.
本揭露之另一目的就是在提供一種濕式處理設備,其可以包含乾燥氮氣與揮發性溶液飽和蒸氣的二流體來噴吹物件。揮發性溶液飽和蒸氣的揮發可快速帶走物件上殘留之水分,藉此可更快速的旋乾物件,而可降低噴吹時間,進而可提升乾燥效率,不僅可有效降低乾燥氮氣的使用量,更可提升產能。此外,物件上的水分被快速帶走可降低水印(watermark)缺陷的形成機率,而可減少產品缺陷與提升良率。Another purpose of the present disclosure is to provide a wet processing equipment, which can contain two fluids of dry nitrogen and saturated vapor of a volatile solution to spray objects. The volatilization of the saturated vapor of the volatile solution can quickly take away the remaining moisture on the object, which can spin dry the object more quickly, and can reduce the spraying time, thereby improving the drying efficiency, not only effectively reducing the amount of dry nitrogen used, but also It can also increase production capacity. In addition, the moisture on the object is quickly taken away, which can reduce the probability of forming watermark defects, thereby reducing product defects and improving yield.
根據本揭露之上述目的,提出一種濕式處理設備。此濕式處理設備包含承載盤、去離子水噴灑裝置、多流體噴灑裝置、以及乾燥氣體噴射裝置。承載盤配置以承載物件。去離子水噴灑裝置設於承載盤之上方,且配置以朝物件噴灑第一去離子水。多流體噴灑裝置設於承載盤之上方,且配置以朝物件噴灑混合流體。此混合流體包含第二去離子水、水蒸汽、與揮發性流體。乾燥氣體噴射裝置設於承載盤之上方,且配置以朝物件噴射乾燥氣體。According to the above objective of the present disclosure, a wet processing equipment is proposed. The wet processing equipment includes a carrier plate, a deionized water spray device, a multi-fluid spray device, and a dry gas spray device. The carrying tray is configured to carry objects. The deionized water spraying device is arranged above the carrying plate and is configured to spray the first deionized water toward the object. The multi-fluid spraying device is arranged above the carrying plate and is configured to spray mixed fluids toward the object. The mixed fluid includes second deionized water, water vapor, and volatile fluid. The dry gas spray device is arranged above the carrier plate and is configured to spray the dry gas toward the object.
依據本揭露之一實施例,上述之濕式處理設備更包含多流體產生裝置、揮發性流體供應裝置、水蒸汽產生器、以及去離子水供應裝置。多流體產生裝置與多流體噴灑裝置流體連通,且配置以產生混合流體與供應此混合流體給多流體噴灑裝置。揮發性流體供應裝置與多流體產生裝置流體連通,且配置以供應揮發性流體給多流體產生裝置。水蒸汽產生器與多流體產生裝置流體連通,且配置以產生水蒸汽與供應水蒸汽給多流體產生裝置。去離子水供應裝置與多流體產生裝置流體連通,且配置以供應第二去離子水給多流體產生裝置。According to an embodiment of the present disclosure, the aforementioned wet processing equipment further includes a multi-fluid generating device, a volatile fluid supply device, a steam generator, and a deionized water supply device. The multi-fluid generating device is in fluid communication with the multi-fluid spraying device and is configured to generate mixed fluid and supply the mixed fluid to the multi-fluid spraying device. The volatile fluid supply device is in fluid communication with the multi-fluid generating device and is configured to supply the volatile fluid to the multi-fluid generating device. The water vapor generator is in fluid communication with the multi-fluid generating device, and is configured to generate water vapor and supply water vapor to the multi-fluid generating device. The deionized water supply device is in fluid communication with the multi-fluid generating device and is configured to supply the second deionized water to the multi-fluid generating device.
依據本揭露之一實施例,上述之揮發性流體為揮發性溶液飽和蒸氣。而且,揮發性流體供應裝置包含揮發性溶液飽和蒸氣產生器以及載氣供應裝置。揮發性溶液飽和蒸氣產生器配置以產生揮發性溶液飽和蒸氣。載氣供應裝置配置以提供氮氣來將揮發性溶液飽和蒸氣運載至多流體產生裝置。According to an embodiment of the present disclosure, the above-mentioned volatile fluid is saturated vapor of a volatile solution. Moreover, the volatile fluid supply device includes a volatile solution saturated vapor generator and a carrier gas supply device. The volatile solution saturated vapor generator is configured to generate volatile solution saturated vapor. The carrier gas supply device is configured to provide nitrogen to carry the saturated vapor of the volatile solution to the multi-fluid generating device.
依據本揭露之一實施例,上述之載氣供應裝置更包含溫度控制器,配置以控制氮氣之溫度。上述之去離子水供應裝置更包含另一溫度控制器,配置以控制第二去離子水之溫度。According to an embodiment of the present disclosure, the aforementioned carrier gas supply device further includes a temperature controller configured to control the temperature of the nitrogen gas. The aforementioned deionized water supply device further includes another temperature controller configured to control the temperature of the second deionized water.
依據本揭露之一實施例,上述之乾燥氣體噴射裝置為乾燥氮氣噴射裝置。According to an embodiment of the present disclosure, the above-mentioned dry gas injection device is a dry nitrogen injection device.
依據本揭露之一實施例,上述之乾燥氣體噴射裝置為乾燥氮氣二流體噴射裝置。而且,濕式處理設備更包含揮發性溶液飽和蒸氣產生器以及載氣供應裝置。揮發性溶液飽和蒸氣產生器與乾燥氣體噴射裝置流體連通,且配置以產生揮發性流體中之揮發性溶液飽和蒸氣。載氣供應裝置配置以提供乾燥氮氣來將揮發性溶液飽和蒸氣運載至乾燥氣體噴射裝置。According to an embodiment of the present disclosure, the above-mentioned dry gas injection device is a dry nitrogen two-fluid injection device. Moreover, the wet processing equipment further includes a volatile solution saturated vapor generator and a carrier gas supply device. The volatile solution saturated vapor generator is in fluid communication with the dry gas injection device, and is configured to generate the volatile solution saturated vapor in the volatile fluid. The carrier gas supply device is configured to provide dry nitrogen gas to carry the saturated vapor of the volatile solution to the dry gas injection device.
依據本揭露之一實施例,上述之濕式處理設備更包含乾燥氮氣噴射裝置,設於承載盤之上方,且配置以朝物件噴射另一乾燥氮氣。According to an embodiment of the present disclosure, the above-mentioned wet processing equipment further includes a dry nitrogen spray device, which is arranged above the carrier plate and is configured to spray another dry nitrogen gas toward the object.
依據本揭露之一實施例,上述之載氣供應裝置更包含溫度控制器,配置以控制乾燥氮氣之溫度。According to an embodiment of the present disclosure, the aforementioned carrier gas supply device further includes a temperature controller configured to control the temperature of the dry nitrogen.
依據本揭露之一實施例,上述之濕式處理設備更包含蝕刻液噴灑裝置,設於承載盤之上方,且配置以朝物件噴灑蝕刻液。According to an embodiment of the present disclosure, the above-mentioned wet processing equipment further includes an etching solution spraying device, which is disposed above the carrier plate and configured to spray the etching solution toward the object.
依據本揭露之一實施例,上述之濕式處理設備更包含夾持裝置、氣浮裝置、轉軸、以及馬達。夾持裝置設於承載盤上,且配置以夾持固定物件。氣浮裝置設於承載盤上,且配置以抬升物件使物件與承載盤分隔開。轉軸與承載盤連接,且配置以旋轉承載盤。馬達與轉軸連接,且配置以驅動轉軸。According to an embodiment of the present disclosure, the above-mentioned wet processing equipment further includes a clamping device, an air floatation device, a rotating shaft, and a motor. The clamping device is arranged on the carrying plate and configured to clamp the fixed object. The air flotation device is arranged on the carrying tray and is configured to lift the object to separate the object from the carrying tray. The rotating shaft is connected with the bearing plate and is configured to rotate the bearing plate. The motor is connected to the rotating shaft and is configured to drive the rotating shaft.
本揭露所敘述之二元件之間的空間關係不僅適用於圖式所繪示之方位,亦適用於圖式所未呈現之方位,例如倒置之方位。此外,本揭露所稱二個部件的「連接」或類似用語並非僅限制於此二者為直接的連接,亦可視需求而包含間接的連接。關於本文中所使用之「第一」、「第二」、…等,並非特別指次序或順位的意思,其僅為了區別以相同技術用語描述的元件或操作。The spatial relationship between the two elements described in this disclosure is not only applicable to the orientation shown in the diagram, but also applicable to the orientation not shown in the diagram, such as the inverted orientation. In addition, the term "connection" or similar terms between the two components mentioned in the present disclosure is not limited to the direct connection between the two components, and may also include indirect connection as required. Regarding the “first”, “second”, etc. used in this text, it does not specifically refer to the order or sequence, but only to distinguish the elements or operations described in the same technical terms.
請參照圖1,其係繪示依照本揭露之一實施方式的一種濕式處理設備的裝置示意圖。濕式處理設備100可應用在電子裝置於製作過程中的濕式處理,例如清洗、蝕刻等等。舉例而言,濕式處理設備100可為晶圓清洗設備、晶圓蝕刻設備、或晶圓蝕刻與清洗設備。在一些例子中,濕式處理設備100主要包含承載盤110、去離子水噴灑裝置120、多流體噴灑裝置130、以及乾燥氣體噴射裝置。乾燥氣體噴射裝置可例如為乾燥氮氣噴射裝置140或乾燥氮氣二流體噴射裝置150。在一些例子中,濕式處理設備100可包含乾燥氮氣噴射裝置140、或乾燥氮氣二流體噴射裝置150、或者乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150。Please refer to FIG. 1, which is a schematic diagram of a wet processing equipment according to an embodiment of the present disclosure. The
承載盤110可用以承載待進行濕式處理之物件160,例如晶圓。承載盤110具有承載面112,物件160設置在承載面112之上。在一些例子中,濕式處理設備100可包含夾持裝置170。此夾持裝置170可設於承載盤110之承載面112上,而可用以將物件160夾持固定在承載面112之上。舉例而言,夾持裝置170可為夾持梢。濕式處理設備100亦可具有不同固定裝置來固定物件160。舉例而言,可利用靜電吸盤來將物件160固定在承載盤110之承載面112上。The
濕式處理設備100更可選擇性地包含氣浮裝置180。此氣浮裝置180可設於承載盤110中,且氣浮裝置180可朝承載面112噴射氣體,以抬升物件160,使物件160與承載盤110之承載面112分隔開,而不會直接接觸承載面112。The
在一些例子中,濕式處理設備100為可旋轉的處理設備。在這樣的例子中,濕式處理設備100更可包含轉軸190與馬達200。轉軸190與承載盤110連接,且可旋轉承載盤110。馬達200與轉軸190連接,且可以驅動轉軸190轉動,進而帶動承載盤110旋轉。In some examples, the
去離子水噴灑裝置120設於承載盤110之承載面112的上方,且位於承載盤110所承載之物件160之上。去離子水噴灑裝置120可朝此物件160之表面162噴灑第一去離子水,來清洗物件160。The deionized
多流體噴灑裝置130同樣設於承載盤110之承載面112的上方,且位於物件160之上。多流體噴灑裝置130可例如鄰近去離子水噴灑裝置120。多流體噴灑裝置130可朝物件160之表面162噴灑混合流體。此混合流體包含多種流體的混合。在一些例子中,此混合流體包含第二去離子水、水蒸汽、與揮發性流體。揮發性流體可包含揮發性溶液及/或揮發性溶液飽和蒸氣。舉例而言,揮發性溶液可為異丙醇(IPA)。去離子水噴灑裝置120與多流體噴灑裝置130可交替運轉,以輪流朝物件160之表面162噴灑去離子水與混合流體。The
請先參照圖4,其係繪示依照本揭露之一實施方式之移除殘留在物件上之處理液與微粒的示意圖。在一些例子中,物件160之表面162上設有許多元件的圖案結構164。酸性或鹼性的處理液PF與微粒PC殘留在物件160之表面162上,且可能落在圖案結構164之間。多流體噴灑裝置130可噴出混合流體霧狀小分子。混合流體MF中之水蒸汽的熱效果可產生氣穴現象。氣穴現象係在混合常溫純水與高溫水蒸氣時,因熱交換而產生具有某種程度之頻率,例如10KHz至1MHz的振動。這樣的振動可提供能量而將水分子分解為氫離子與氫氧離子,不穩定之氫離子與氫氧離子再次回到水分子時所產生之高能量可轉換為機械性衝擊,藉此水分子可迅速與物件160之表面162上殘留的酸性或鹼性的處理液PF及微粒PC結合。多流體噴灑裝置130噴出混合流體霧狀小分子,不僅可減少去離子水的使用量,亦可提升清洗效果。Please refer to FIG. 4 first, which is a schematic diagram of removing the processing liquid and particles remaining on the object according to an embodiment of the present disclosure. In some examples, the
此外,多流體噴灑裝置130所噴出之混合流體MF中的揮發性流體,例如揮發性溶液及/或揮發性溶液飽和蒸氣,的揮發可提供殘留之處理液PF與微粒PC額外的擴散與移動動能。圖4之箭頭AR表示混合流體MF中之揮發性溶液飽和蒸氣的移動方向,揮發性溶液飽和蒸氣在揮發的過程中提供移動與擴散動能給處理液PF與微粒PC。藉此,殘留在物件160上的處理液PF與微粒PC可隨著混合流體MF而被迅速帶走。因此,可進一步降低去離子水的使用量,並可提升殘留處理液PF與微粒PC的去除效率。而由於殘留之處理液PF與微粒PC的去除效果提升,因此多流體噴灑裝置130可不需要使用太大的噴射力即可有效去除殘留之處理液PF與微粒PC。故,可降低對物件160之表面162上之圖案結構164的衝擊,例如可降低對晶圓之元件圖案結構的衝擊,而可避免物件160受損,進而可降低物件160的缺陷,有效提升產品良率。In addition, the volatilization of the volatile fluid in the mixed fluid MF sprayed by the
請同時參照圖1與圖2,其中圖2係繪示依照本揭露之一實施方式的一種濕式處理設備之多流體供應系統的裝置示意圖。在一些例子中,濕式處理設備100更可包含多流體供應系統300。多流體供應系統300可與多流體噴灑裝置130流體連通,且可提供多種流體之混合流體給多流體噴灑裝置130。在一些例子中,多流體供應系統300主要可包含多流體產生裝置310、揮發性流體供應裝置320、水蒸汽產生器330、以及去離子水供應裝置340。Please refer to FIG. 1 and FIG. 2 at the same time. FIG. 2 is a schematic diagram of a multi-fluid supply system of a wet processing equipment according to an embodiment of the present disclosure. In some examples, the
多流體產生裝置310可與多流體噴灑裝置130流體連通。多流體產生裝置310可產生混合流體,並將所產生之混合流體供應給多流體噴灑裝置130。多流體產生裝置310可產生第二去離子水、揮發性流體、與水蒸汽的混合流體。The
揮發性流體供應裝置320可與多流體產生裝置310流體連通,而可供應揮發性流體給多流體產生裝置310。在一些示範例子中,揮發性流體供應裝置320所供應之揮發性流體為揮發性溶液飽和蒸氣。如圖2所示,在這樣的例子中,揮發性流體供應裝置320可例如包含揮發性溶液飽和蒸氣產生器322以及載氣供應裝置324。揮發性溶液飽和蒸氣產生器322可與多流體產生裝置310流體連通。揮發性溶液飽和蒸氣產生器322可產生揮發性溶液飽和蒸氣,並將揮發性溶液飽和蒸氣供應給多流體產生裝置310。The volatile
載氣供應裝置324則可與揮發性溶液飽和蒸氣產生器322流體連通。載氣供應裝置324可提供載氣給揮發性溶液飽和蒸氣產生器322,藉以利用載氣來將揮發性溶液飽和蒸氣產生器322所產生之揮發性溶液飽和蒸氣載送至多流體產生裝置310。載氣可例如為氮氣。在一些示範例子中,載氣供應裝置324更可包含溫度控制器326。溫度控制器326配置以控制供應給揮發性溶液飽和蒸氣產生器322之載氣,例如氮氣的溫度。溫度控制器326的配置可對載氣進行各種溫度的設定,而可擴展濕式處理設備100的應用性,例如高溫製程的應用。The carrier
在其他例子中,揮發性流體供應裝置320所供應之揮發性流體為揮發性溶液。在這樣的例子中,揮發性流體供應裝置320所提供之揮發性溶液可直接經由管路流到多流體產生裝置310中,因而無需載氣供應裝置324。揮發性流體供應裝置320可選擇性地配置溫度控制器(未繪示),以控制所供應之揮發性溶液的溫度。In other examples, the volatile fluid supplied by the volatile
水蒸汽產生器330同樣可與多流體產生裝置310流體連通。水蒸汽產生器330可產生水蒸汽,並將水蒸氣供應給多流體產生裝置310。The
去離子水供應裝置340可與多流體產生裝置310流體連通。藉此,去離子水供應裝置340可供應第二去離子水給多流體產生裝置310。在一些示範例子中,去離子水供應裝置340更可包含溫度控制器342,以控制供應給多流體產生裝置310之第二去離子水的溫度,以利擴展濕式處理設備100的應用性。The deionized
在一些例子中,請繼續參照圖1,乾燥氣體噴射裝置,例如乾燥氮氣噴射裝置140及/或乾燥氮氣二流體噴射裝置150,設於承載盤110之上方,且配置以朝承載面112上之物件160之表面162噴射乾燥氣體,來去除物件160上的殘留液體,以乾燥物件160。乾燥氮氣噴射裝置140可朝物件160噴射乾燥氮氣。乾燥氮氣二流體噴射裝置150則可朝物件160之表面162噴射乾燥氮氣與揮發性溶液飽和蒸氣,即此時的乾燥氣體包含乾燥氮氣與揮發性溶液飽和蒸氣。當濕式處理設備100同時包含乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150時,乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150可輪流對物件160之表面162噴射乾燥氣體。In some examples, please continue to refer to FIG. 1, a dry gas injection device, such as a dry nitrogen
請同時參照圖1與圖3,其中圖3係繪示依照本揭露之一實施方式的一種濕式處理設備之乾燥氮氣二流體供應系統的裝置示意圖。在濕式處理設備100至少包含有乾燥氮氣二流體噴射裝置150的例子中,濕式處理設備100更可包含乾燥氮氣二流體供應系統400。乾燥氮氣二流體供應系統400可與乾燥氮氣二流體噴射裝置150流體連通,且可提供二種乾燥流體給乾燥氮氣二流體噴射裝置150。在一些例子中,乾燥氮氣二流體供應系統400主要可包含揮發性溶液飽和蒸氣產生器410以及載氣供應裝置420。Please refer to FIGS. 1 and 3 at the same time. FIG. 3 is a schematic diagram of a dry nitrogen two-fluid supply system of a wet processing equipment according to an embodiment of the present disclosure. In an example where the
揮發性溶液飽和蒸氣產生器410可與乾燥氮氣二流體噴射裝置150流體連通。揮發性溶液飽和蒸氣產生器410可產生揮發性溶液飽和蒸氣,並將揮發性溶液飽和蒸氣供應給乾燥氮氣二流體噴射裝置150。The volatile solution saturated
載氣供應裝置420可與揮發性溶液飽和蒸氣產生器410流體連通。載氣供應裝置420可提供載氣給揮發性溶液飽和蒸氣產生器410。藉此,可利用載氣將揮發性溶液飽和蒸氣產生器410所產生之揮發性溶液飽和蒸氣載送至乾燥氮氣二流體噴射裝置150。載氣可例如為乾燥氮氣。在一些示範例子中,載氣供應裝置420更可包含溫度控制器422。溫度控制器422配置以控制供應給揮發性溶液飽和蒸氣產生器410之載氣,例如乾燥氮氣的溫度。The carrier
乾燥氮氣二流體噴射裝置150可噴出乾燥氮氣與揮發性溶液飽和蒸氣。揮發性液體飽和蒸汽的揮發可將殘留在物件160之表面162上的水分快速帶走,因此可降低乾燥製程的時間,而可降低乾燥氮氣的使用量。此外,由於乾燥氮氣與揮發性液體飽和蒸汽之二流體可更快速地旋乾物件160之表面162上的水分,因此可大幅提升乾燥效率,而可降低水印缺陷在物件160之表面162上的形成機率,進而可降低產品缺陷與提升良率,並可提高產量。The dry nitrogen two-
在一些例子中,如圖1所示,濕式處理設備100可為濕式蝕刻處理設備,而更包含蝕刻液噴灑裝置210。蝕刻液噴灑裝置210同樣設於承載盤110之承載面112的上方,且可朝物件160之表面162噴灑蝕刻液。蝕刻液可例如為酸性溶液或鹼性溶液。在一些示範例子中,濕式處理設備100為單晶圓旋轉濕式蝕刻設備。In some examples, as shown in FIG. 1, the
在一些例子中,可利用濕式處理設備100對物件160濕式清洗處理。請參照圖1,在這樣的例子中,可利用去離子水噴灑裝置120對物件160噴灑第一去離子水,且可利用多流體噴灑裝置130對此物件160噴灑混合流體。混合流體可包含第二去離子水、水蒸汽、與揮發性流體。揮發性流體可例如包含揮發性溶液及/或揮發性溶液飽和蒸氣。可以交替方式,利用去離子水噴灑裝置120與多流體噴灑裝置130來對物件160輪流噴灑第一去離子水與混合流體。對物件160噴灑第一去離子與混合流體時,可利用馬達200來驅動轉軸190,以帶動承載盤110及其上之物件160旋轉。In some examples, the
請一併參照圖2,利用多流體噴灑裝置130朝物件160之表面162噴灑混合流體時,可利用載氣供應裝置324提供載氣,而以載氣運載揮發性溶液飽和蒸氣至多流體產生裝置310。多流體產生裝置310將揮發性溶液飽和蒸氣、水蒸汽產生器330所產生之水蒸汽、與去離子水供應裝置340供應之第二去離子水混合後,再將混合流體供應給多流體噴灑裝置130。此外,更可根據清洗處理需求,利用載氣供應裝置324之溫度控制器326來控制所提供之載氣的溫度,及/或利用去離子水供應裝置340之溫度控制器342來控制所提供之第二去離子水的溫度,以提供所需溫度之混合流體。Please also refer to FIG. 2, when the
接著,可利用乾燥氣體噴射裝置,例如乾燥氮氣噴射裝置140及/或乾燥氮氣二流體噴射裝置150,對物件160噴射乾燥氣體,以吹乾物件160。乾燥氮氣噴射裝置140所噴射之乾燥氣體為乾燥氮氣,乾燥氮氣二流體噴射裝置150所噴射之乾燥氣體為乾燥氮氣與揮發性溶液飽和蒸氣所組成之二流體。在濕式處理設備100同時包含乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150的例子中,可以交替方式,利用乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150來對物件160輪流噴射乾燥氮氣、以及乾燥氮氣與揮發性溶液飽和蒸氣。對物件160噴射乾燥氣體時,可利用轉軸190來帶動承載盤110及其上之物件160旋轉,而加速物件160的乾燥。Then, a dry gas spray device, such as a dry
請一併參照圖3,利用乾燥氮氣二流體噴射裝置150朝物件160之表面162噴射乾燥氮氣二流體時,可利用揮發性溶液飽和蒸氣產生器410產生揮發性溶液飽和蒸氣,並利用載氣供應裝置420提供乾燥氮氣作為載氣,來將揮發性溶液飽和蒸氣運送至乾燥氮氣二流體噴射裝置150。同樣可根據乾燥處理需求,利用載氣供應裝置420之溫度控制器422來控制所提供之載氣的溫度,以提供所需溫度之二流體。Please also refer to FIG. 3, when the dry nitrogen two-
在濕式處理設備100包含蝕刻液噴灑裝置210的例子中,濕式處理設備100為濕式蝕刻處理設備。可利用蝕刻液噴灑裝置210朝物件160之表面162噴灑蝕刻液,來蝕刻物件160之表面162。對物件160噴灑蝕刻液時,可利用轉軸190來帶動承載盤110及其上之物件160旋轉。可於每道蝕刻製程後,利用濕式處理設備100對物件160進行清洗處理與後續之乾燥處理。In an example in which the
以下利用一示範例子來說明濕式處理設備100對物件160的濕式蝕刻處理、清洗處理、與乾燥處理。請再次參照圖1,利用傳送機構(未繪示)將物件160載送到承載盤110上時,夾持裝置170打開,以承接傳送機構所放下之物件160,而後夾持裝置170關上以夾緊物件160,而將物件160固定在承載盤110之承載面112之上。接下來,可對物件160進行濕式蝕刻製程,以利用馬達200帶動轉軸190轉動,而進一步帶動承載盤110及固定於其上之物件160旋轉。接著,承載盤110可根據蝕刻液回收位置而升降至適當位置,再以蝕刻液噴灑裝置210朝物件160之表面162噴灑蝕刻液來進行物件160的蝕刻。此時,蝕刻液因物件160旋轉所產生之離心力而被甩出物件160,而落到承載盤110周圍之蝕刻液回收裝置中。於設定之蝕刻秒數後,停止噴灑蝕刻液,承載盤110再升降至清洗位置,以清除殘留在物件160上之蝕刻液與微粒。Hereinafter, an exemplary example is used to describe the wet etching, cleaning, and drying processing of the
進行清洗處理時,可以交替方式,利用去離子水噴灑裝置120與多流體噴灑裝置130來輪流對物件160噴灑去離子水與混合流體。可視製程需求,來分別設定去離子水噴灑裝置120與多流體噴灑裝置130的噴灑時間。During the cleaning process, the deionized
待清洗處理結束,可根據製程需求,而單獨利用乾燥氮氣噴射裝置140或乾燥氮氣二流體噴射裝置150,或利用乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150來進行乾燥處理。可以交替方式,利用乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150來輪流對物件160噴射乾燥氮氣、及乾燥氮氣二流體。同樣可視製程需求,來分別設定乾燥氮氣噴射裝置140與乾燥氮氣二流體噴射裝置150的噴射時間。After the cleaning process is completed, the dry
完成乾燥處理後,承載盤110升降到傳送位置後停止旋轉。夾持裝置170打開,傳送裝置將完成濕式處理的物件160取出,再放置下一片待濕式處理的物件160,然後重覆上述步驟直至處理完所有物件160。After the drying process is completed, the
由上述之實施方式可知,本揭露之一優點就是因為本揭露可以輪流對物件噴灑去離子水,以及包含去離子水、水蒸汽、與揮發性流體之混合流體的霧狀小分子。水蒸汽小分子可減少濕式處理時去離子水的使用量,並可提升清洗效果。此外,揮發性流體的揮發可提供殘留在物件上之處理液與微粒擴散與移動動能,而可縮短清洗時間,進一步降低去離子水的使用量,並可提升去除效率,更可避免破壞物件,進而可降低產品缺陷,提升良率。As can be seen from the above-mentioned embodiments, one of the advantages of the present disclosure is that the present disclosure can spray deionized water on the object in turn, and mist-like small molecules containing a mixed fluid of deionized water, water vapor, and volatile fluid. Small water vapor molecules can reduce the amount of deionized water used in wet processing and improve the cleaning effect. In addition, the volatilization of volatile fluids can provide kinetic energy for the diffusion and movement of processing liquids and particles remaining on the object, which can shorten the cleaning time, further reduce the amount of deionized water used, and improve the removal efficiency, and can prevent damage to the object. In turn, product defects can be reduced and yield can be improved.
本揭露之另一優點就是因為本揭露可以包含乾燥氮氣與揮發性溶液飽和蒸氣的二流體來噴吹物件。揮發性溶液飽和蒸氣的揮發可快速帶走物件上殘留之水分,藉此可更快速的旋乾物件,而可降低噴吹時間,進而可提升乾燥效率,不僅可有效降低乾燥氮氣的使用量,更可提升產能。此外,物件上的水分被快速帶走可降低水印缺陷的形成機率,而可減少產品缺陷與提升良率。Another advantage of the present disclosure is that the present disclosure can spray objects with two fluids including dry nitrogen and saturated vapor of volatile solution. The volatilization of the saturated vapor of the volatile solution can quickly take away the remaining moisture on the object, which can spin dry the object more quickly, and can reduce the spraying time, thereby improving the drying efficiency, not only effectively reducing the amount of dry nitrogen used, but also It can also increase production capacity. In addition, the moisture on the object is quickly taken away to reduce the probability of forming watermark defects, which can reduce product defects and improve yield.
雖然本揭露已以實施例揭示如上,然其並非用以限定本揭露,任何在此技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作各種之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。Although the present disclosure has been disclosed in the above embodiments, it is not intended to limit the present disclosure. Anyone with ordinary knowledge in this technical field can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of this disclosure shall be subject to the scope of the attached patent application.
100:濕式處理設備 110:承載盤 112:承載面 120:去離子水噴灑裝置 130:多流體噴灑裝置 140:乾燥氮氣噴射裝置 150:乾燥氮氣二流體噴射裝置 160:物件 162:表面 164:圖案結構 170:夾持裝置 180:氣浮裝置 190:轉軸 200:馬達 210:蝕刻液噴灑裝置 300:多流體供應系統 310:多流體產生裝置 320:揮發性流體供應裝置 322:揮發性溶液飽和蒸氣產生器 324:載氣供應裝置 326:溫度控制器 330:水蒸汽產生器 340:去離子水供應裝置 342:溫度控制器 400:乾燥氮氣二流體供應系統 410:揮發性溶液飽和蒸氣產生器 420:載氣供應裝置 422:溫度控制器 AR:箭頭 MF:混合流體 PC:微粒 PF:處理液 100: Wet processing equipment 110: Carrier plate 112: bearing surface 120: Deionized water spray device 130: Multi-fluid spraying device 140: Dry nitrogen injection device 150: Dry nitrogen two-fluid injection device 160: Object 162: Surface 164: Pattern structure 170: Clamping device 180: Air flotation device 190: Hinge 200: Motor 210: Etching liquid spraying device 300: Multi-fluid supply system 310: Multi-fluid generator 320: Volatile fluid supply device 322: Volatile solution saturated steam generator 324: Carrier Gas Supply Device 326: Temperature Controller 330: Steam Generator 340: Deionized water supply device 342: Temperature Controller 400: Dry nitrogen two-fluid supply system 410: Saturated vapor generator for volatile solution 420: carrier gas supply device 422: temperature controller AR: Arrow MF: Mixed fluid PC: Particles PF: Treatment fluid
為讓本揭露之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下: [圖1]係繪示依照本揭露之一實施方式的一種濕式處理設備的裝置示意圖。 [圖2]係繪示依照本揭露之一實施方式的一種濕式處理設備之多流體供應系統的裝置示意圖。 [圖3]係繪示依照本揭露之一實施方式的一種濕式處理設備之乾燥氮氣二流體供應系統的裝置示意圖。 [圖4]係繪示依照本揭露之一實施方式之移除殘留在物件上之處理液與微粒的示意圖。 In order to make the above and other objectives, features, advantages and embodiments of the present disclosure more obvious and understandable, the description of the accompanying drawings is as follows: [Fig. 1] is a schematic diagram of a wet processing equipment according to an embodiment of the present disclosure. [Fig. 2] is a schematic diagram showing a device of a multi-fluid supply system of a wet processing equipment according to an embodiment of the present disclosure. [Fig. 3] is a schematic diagram showing a dry nitrogen two-fluid supply system of a wet processing equipment according to an embodiment of the present disclosure. [Fig. 4] is a schematic diagram showing the removal of the processing liquid and particles remaining on the object according to an embodiment of the present disclosure.
100:濕式處理設備 100: Wet processing equipment
110:承載盤 110: Carrier plate
112:承載面 112: bearing surface
120:去離子水噴灑裝置 120: Deionized water spray device
130:多流體噴灑裝置 130: Multi-fluid spraying device
140:乾燥氮氣噴射裝置 140: Dry nitrogen injection device
150:乾燥氮氣二流體噴射裝置 150: Dry nitrogen two-fluid injection device
160:物件 160: Object
162:表面 162: Surface
170:夾持裝置 170: Clamping device
180:氣浮裝置 180: Air flotation device
190:轉軸 190: Hinge
200:馬達 200: Motor
210:蝕刻液噴灑裝置 210: Etching liquid spraying device
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110201928U TWM612412U (en) | 2021-02-22 | 2021-02-22 | Wet processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| TW110201928U TWM612412U (en) | 2021-02-22 | 2021-02-22 | Wet processing apparatus |
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| Publication Number | Publication Date |
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| TWM612412U true TWM612412U (en) | 2021-05-21 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI842030B (en) * | 2022-07-29 | 2024-05-11 | 大陸商杭州善上水科技有限公司 | Small-molecule drinking water, preparation method and application |
| US12371351B2 (en) | 2019-10-22 | 2025-07-29 | Hangzhou shanshangshui Technology Co., Ltd | Protonated small-molecule drinking water, preparation method and application |
-
2021
- 2021-02-22 TW TW110201928U patent/TWM612412U/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12371351B2 (en) | 2019-10-22 | 2025-07-29 | Hangzhou shanshangshui Technology Co., Ltd | Protonated small-molecule drinking water, preparation method and application |
| TWI842030B (en) * | 2022-07-29 | 2024-05-11 | 大陸商杭州善上水科技有限公司 | Small-molecule drinking water, preparation method and application |
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