TWM608263U - Substrate processing device - Google Patents

Abstract

An object of the invention is to provide technology that can form a plurality of pairs of a rotating flow channel and a fixed flow channel which face each other at an appropriate distance, and control the flow of gas for each such pair. A substrate processing device of the invention comprises a spindle which rotates a substrate and a gas bearing which supports the spindle in a freely rotatable manner via a gas layer, wherein a plurality of rotating flow channels through which gas flows are formed inside the spindle, a plurality of fixed flow channels through which gas flows are formed inside the gas bearing, and the plurality of fixed flow channels each face a different rotating flow channel via the gas layer.

Description

Substrate processing device

This creation is about a substrate processing device.

Patent Document 1 describes a device in which a main shaft is installed inside an air bearing, and a vacuum chuck is installed on the main shaft. The first vacuum passage opens from the end of the vacuum chuck mounting portion of the main shaft through the inside of the main shaft to the outer peripheral surface of the main shaft, and forms a first connection port on the outer peripheral surface of the main shaft. In the second vacuum passage, an annular second connection port is formed at a position opposite to the first connection port on the inner peripheral surface of the air bearing, and the second connection port passes through the inside of the air bearing. [Literature Technical Literature] [Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. 62-193704

[The problem to be solved by this creation]

One aspect of this creation provides a technology that can form a plurality of combinations of rotating flow paths and fixed flow paths facing each other at appropriate intervals, and the flow of gas can be controlled for each combination. [Technical means to solve the problem]

One aspect of this creation is a substrate processing device that includes: Mandrel to rotate the substrate; and The gas bearing supports the mandrel in a freely rotatable manner through the gas layer; A plurality of rotating flow paths for gas circulation are formed inside the mandrel, and a plurality of fixed flow paths for gas circulation are formed inside the gas bearing; The plurality of fixed flow paths are opposed to the different rotating flow paths with the gas layer interposed therebetween. [The effect of this creation]

According to one aspect of this creation, a plurality of combinations of rotating flow paths and fixed flow paths facing each other can be formed at appropriate intervals, and the flow of gas can be controlled for each combination.

Hereinafter, referring to the drawings, the implementation mode of this creation will be explained. In addition, there are cases where the same or corresponding components in the drawings are given the same symbols, and their descriptions are omitted.

The substrate processing apparatus 1 shown in FIG. 1 etc. rotates the substrate 2 and processes the substrate 2. The substrate 2 is, for example, a silicon wafer. The substrate 2 can be attached to the tape 5 covering the opening of the ring-shaped frame 3. The substrate 2 can be held by the holding frame 3, so the operability of the substrate 2 can be improved. In addition, the substrate 2 may be attached to a supporting substrate not shown in advance, or may be attached to the tape 5 via the supporting substrate.

The processing of the substrate 2 is, for example, laser processing. The laser light is concentrated and irradiated to the inside of the substrate 2 to form a modified layer inside the substrate 2. The modified layer becomes the starting point for dividing the substrate 2. Laser light can also be used to remove the film formed on the surface of the substrate 2. In addition, the processing of the substrate 2 is not limited to laser processing. For example, as the processing of the substrate 2, grinding processing, polishing processing, liquid processing, plasma processing, and the like can be cited.

The substrate processing apparatus 1 is provided with a spindle 10 for rotating the substrate 2 as shown in FIG. 1 and the like. The spindle 10 is connected to a motor M, and is rotated by the motor M. The rotating shaft of the motor M is arranged on the extension line of the spindle 10 and is directly connected to the spindle 10. However, the rotating shaft of the motor M may be arranged shifted from the extension line of the spindle 10, or may be connected to the spindle 10 via a timing belt, gears, or the like.

The spindle 10, as shown in FIG. 2, includes, for example, a first rotating shaft 11, a second rotating shaft 12, and a diameter between the first rotating shaft 11 and the second rotating shaft 12, which is larger than that of the first rotating shaft 11 and the second rotating shaft. The rotating shaft 12 is a smaller intermediate shaft 13. The first rotating shaft 11, the second rotating shaft 12, and the intermediate shaft 13 are arranged on the same vertical line in this embodiment, but they may also be arranged on the same horizontal line.

The substrate processing apparatus 1 includes a gas bearing 20 that supports the mandrel 10 arbitrarily rotatable via the gas layer GL. The gas bearing 20 is connected to a bearing gas supplier 30, and the bearing gas supplier 30 supplies compressed gas to the gas bearing 20. The gas bearing 20 forms a small gap with the spindle 10, supplies compressed gas to the gap, and receives radial load and axial load by the pressure of the supplied compressed gas. The compressed gas is, for example, compressed air, and the gas bearing 20 is, for example, an air bearing.

Unlike ball bearings and rolling bearings, the gas bearing 20 is of a non-contact type, so it can suppress the swing of the spindle 10 that may occur due to the shape error of the gas bearing 20 or the spindle 10, and can suppress the shaking of the substrate 2. As a result, the processing accuracy of the substrate 2 can be improved. For example, the accuracy of the irradiation position of the laser light can be improved, and the accuracy of the formation position of the modified layer or the removal position of the film can be improved.

In addition, the gas bearing 20 can reduce frictional resistance compared to ball bearings and rolling bearings, and can achieve high-speed rotation. Since there is almost no friction, the generation of dust is suppressed, and the service life of the machine is long. Furthermore, the gas bearing 20, unlike ball bearings and rolling bearings, can be solved without using lubricants for lubrication, so that contamination caused by lubricants can be prevented.

The gas bearing 20 is formed in a cylindrical shape and is connected to an axial end surface (for example, bottom surface) 11a of the first rotating shaft 11, an axial end surface (for example, top surface) 12a of the second rotating shaft 12, and the outer periphery of the intermediate shaft 13 Between the surfaces 13a, a gas layer GL is formed. Since the pressure of the compressed gas acts on the entire circumference of the outer peripheral surface 13a of the intermediate shaft 13, it can bear radial load. In addition, since the pressure of the compressed gas acts on both the axial end surface (for example, the bottom surface) 11a of the first rotating shaft 11 and the axial end surface (for example, the top surface) 12a of the second rotating shaft 12, it can bear in both axial directions. The load.

In addition, the gas bearing 20 may be the same as the air bearing of Patent Document 1, and may only receive a load in one direction in the axial direction. In this case, the gas bearing 20 forms a gas layer GL between the axial end surface (for example, the bottom surface) 11 a of the first rotating shaft 11 and the outer peripheral surface 13 a of the intermediate shaft 13. The diameter of the intermediate shaft 13 may be the same as the diameter of the second rotating shaft 12.

The gas bearing 20 includes, for example, a porous first cylindrical portion 21 and a second cylindrical portion 22 surrounding the first cylindrical portion 21. The first cylindrical portion 21 directs the compressed gas supplied from the bearing gas supplier 30 toward the axial end surface 11a of the first rotating shaft 11, the axial end surface 12a of the second rotating shaft 12, and the outer periphery of the intermediate shaft 13 Spray on the surface 13a. On the other hand, the second cylindrical portion 22 surrounds the first cylindrical portion 21, suppresses the leakage of compressed gas from the first cylindrical portion 21 to the radially outward direction, and increases the pressure of the gas layer GL.

The substrate processing apparatus 1 is provided with a chuck 40 for sucking the substrate 2 as shown in FIG. 1 and the like. When the substrate 2 is attached to the tape 5, the suction cup 40 sucks the substrate 2 through the tape 5. The chuck 40 rotates together with the spindle 10 in a state where the substrate 2 is sucked. Negative pressure is supplied from the spindle 10 to the suction surface 41 of the suction cup 40 that suctions the substrate 2.

In this specification, negative pressure refers to an air pressure lower than the air pressure (for example, atmospheric pressure) inside the substrate processing apparatus 1. The air pressure inside the substrate processing apparatus 1 may also be different from the atmospheric pressure, and the higher air pressure may be lower, or the higher air pressure may be higher.

The diameter of the suction cup 40 is equal to the diameter of the substrate 2 so that the suction cup 40 can suck the entire substrate 2. In addition, the diameter of the suction cup 40 may be greater than or equal to the diameter of the substrate 2 and may be larger than the diameter of the substrate 2.

The suction cup 40 includes, for example, a disk body 42 and a disk-shaped porous body 43 that is fitted into a recess on one side of the disk body 42. The number of porous bodies 43 is one in this embodiment, but it may be plural. A plurality of porous bodies 43 are arranged concentrically. A negative pressure is supplied to the porous body 43, and the suction cup 40 sucks the substrate 2 by the negative pressure.

The substrate processing apparatus 1 includes a rotating body 50 that sucks the chuck 40. The rotating body 50 is locked to the spindle 10 by bolts or the like. A suction cup 40 is attached to the spindle 10 via the rotating body 50. The rotating body 50 rotates together with the spindle 10 in a state where the suction cup 40 is adsorbed. The suction surface 51 of the suction cup 40 of the rotating body 50 is supplied with negative pressure from the spindle 10.

The rotating body 50 includes, for example, a disk body 52 and a ring-shaped porous body 53 that is fitted into a recess on one side of the disk body 52. The number of porous bodies 53 is plural in this embodiment, but it may be one. The plural porous bodies 53 are arranged concentrically. Negative pressure is supplied to the porous body 53, and the rotating body 50 adsorbs the suction cup 40 by the negative pressure. In addition, instead of the porous body 53, a groove space may be formed.

The rotating body 50 and the suction cup 40 are disk-shaped, respectively, and the diameter of the rotating body 50 is smaller than the diameter of the suction cup 40. It can suppress the reduction in the area of the suction surface 41 of the suction cup 40, suppress the decrease in the stability of the substrate 2, and reduce the moment of inertia of the entire component that is rotated by the motor M. The capacity of the motor M can be reduced, and the motor M can be miniaturized. .

The moment of inertia of each component is determined by the diameter and thickness of each component. As mentioned above, making the diameter of the rotating body 50 smaller than the diameter of the suction cup 40 is effective for miniaturization of the motor M, and reducing the thickness of the suction cup 40 is also an effective method.

On the other hand, if the thickness of the suction cup 40 is thin, it becomes difficult to lock the suction cup 40 to the rotating body 50 with a bolt or the like. This is because the sucker 40 is partially locked by the bolt, so the sucker 40 is deformed, and the flatness of the suction surface 41 of the sucker 40 deteriorates.

According to this embodiment, the rotating body 50 sucks the suction cup 40, so the flatness of the suction surface 41 of the suction cup 40 can be maintained, and the suction cup 40 can be made thinner, so that the motor M can be miniaturized. That is, in this embodiment, for the purpose of miniaturization of the motor M, the rotating body 50 is arranged between the suction cup 40 and the spindle 10.

It is also possible to form positioning pins 54 on the suction surface 51 of the rotating body 50 as shown in FIG. 5. The positioning pin 54 is fitted into the positioning hole of the suction cup 40, and the center of the rotating body 50 and the center of the suction cup 40 are arranged on the extension line of the spindle 10. In addition, the positioning pin 54 and the positioning hole may be arranged in reverse, and the positioning hole may be formed in the rotating body 50 and the positioning pin 54 may be formed in the suction cup 40.

The substrate processing apparatus 1 is provided with a frame suction body 60 that suctions the frame 3 on the outer side of the suction cup 40. The frame suction body 60 rotates together with the suction cup 40 in a state where the frame 3 is suctioned. The frame 3 and the substrate 2 can be rotated at the same rotation speed, and the twisting of the tape 5 can be suppressed. The suction surface 61 of the suction frame 3 of the frame suction body 60 is supplied with negative pressure from the mandrel 10.

The frame suction body 60 is, for example, attached to the front end of a robot arm 62 extending radially outward from the rotating body 50. A plurality of robot arms 62 are arranged radially, and a frame adsorption body 60 is attached to the front end of each of the plurality of robot arms 62. A plurality of frame adsorption bodies 60 may be arranged at equal intervals in the circumferential direction of the rotating body 50.

As described above, the substrate processing apparatus 1 includes a plurality of suction members that rotate together with the spindle 10. Specific examples of the suction member include the suction cup 40, the rotating body 50, and the frame suction body 60. For these suction members, negative pressure is supplied from the mandrel 10 individually.

Therefore, as shown in FIG. 2, inside the mandrel 10, a plurality of rotating flow paths through which gas flows are formed. As the swirling flow path, for example, a first swirling flow path 71, a second swirling flow path 72, and a third swirling flow path 73 are formed. In addition, the number of rotating flow paths may be appropriately selected according to the number of adsorption members rotating together with the mandrel 10, and it is not limited to three, and may be two or more than four.

Similarly, inside the gas bearing 20, a plurality of fixed flow paths through which gas flows are formed. As the fixed flow path, for example, a first fixed flow path 81, a second fixed flow path 82, and a third fixed flow path 83 are formed. In addition, the number of fixed flow paths may be appropriately selected according to the number of adsorption members rotating together with the mandrel 10, and it is not limited to three, and may be two or more than four.

A plurality of fixed flow paths are opposed to different rotating flow paths with the gas layer GL interposed therebetween. For example, with the gas layer GL interposed, the first rotating flow path 71 and the first fixed flow path 81 are opposed to each other, the second rotating flow path 72 and the second fixed flow path 82 are opposed to each other, and the third rotating flow path 73 and the second fixed flow path are opposed to each other. The 3 fixed flow paths 83 face each other.

The thickness of the gas layer GL is managed with high precision in order to smoothly rotate the mandrel 10, and is managed as a thin layer thickness in order to increase the pressure of the gas in the gas layer GL. Therefore, a plurality of combinations of fixed flow paths and rotating flow paths facing each other can be formed at appropriate intervals, and the flow of gas can be controlled for each combination. Therefore, the interval between the fixed flow path and the rotating flow path facing each other is narrow, and the gas flows smoothly between the fixed flow path and the rotating flow path. Therefore, negative pressure can be supplied to a plurality of adsorption members individually, and adsorption and adsorption cancellation can be performed for each adsorption member. For example, in a state where the rotating body 50 sucks the suction cup 40, the suction cup 40 can suck the substrate 2 and release the suction. In addition, in a state where the rotating body 50 is sucking the suction cup 40, the frame sucking body 60 can suck the frame 3 and release the sucking.

As shown in FIG. 2, a plurality of fixed flow paths, such as the first fixed flow path 81, the second fixed flow path 82, and the third fixed flow path 83, are located on the inner peripheral surface 20a of the gas bearing 20 and on the shaft of the gas bearing 20 To open at intervals. In FIG. 2, 81 a is the opening of the first fixed flow path 81, 82 a is the opening of the second fixed flow path 82, and 83 a is the opening of the third fixed flow path 83.

On the other hand, a plurality of swirling flow paths, such as the first swirling flow path 71, the second swirling flow path 72, and the third swirling flow path 73, are separated from the outer peripheral surface 13a of the intermediate shaft 13 in the axial direction of the intermediate shaft 13 It opens at intervals and opens in a ring shape covering the entire circumferential direction of the intermediate shaft 13. In FIG. 2, 71 a is the opening of the first swirling flow path 71, 72 a is the opening of the second swirling flow path 72, and 73 a is the opening of the third swirling flow path 73.

The opening 81a of the first fixed flow path 81 and the opening 71a of the first rotating flow path 71 are opposed to each other, the opening 82a of the second fixed flow path 82 and the opening 72a of the second rotational flow path 72 are opposed to each other, and the third fixed flow The opening 83a of the passage 83 and the opening 73a of the third rotating flow passage 73 face each other.

The rotating openings 71a, 72a, and 73a are formed in a ring shape, so they can always face each other with the fixed openings 81a, 82a, and 83a. As a result, during the rotation of the spindle 10, the interruption of the supply of negative pressure can be prevented.

In addition, in this embodiment, all the fixed flow paths are open on the inner peripheral surface 20a of the gas bearing 20, but one or more fixed flow paths may be provided on the axial end surface 20b of the gas bearing 20 or another axial direction. One end surface 20c is open.

Similarly, in this embodiment, all the rotating flow paths are opened on the outer peripheral surface 13a of the intermediate shaft 13, but one or more rotating flow paths may be provided on the axial end surface 11a or the first rotating shaft 11 in the axial direction. 2. One axial end surface 12a of the rotating shaft 12 is open.

The first fixed flow path 81 and the first rotating flow path 71 form a first negative pressure supply line 91 for supplying negative pressure to the suction surface 41 of the suction cup 40. As shown in FIG. 1, the first negative pressure supply line 91 supplies negative pressure to the suction surface 41 of the suction cup 40 through the gas bearing 20, the spindle 10 and the rotating body 50. At one end of the first negative pressure supply line 91, a first gas suction device 101 for sucking gas is provided. As the first gas suction device 101, for example, a vacuum pump or an ejector is used. The negative pressure generated by the first gas suction device 101 is supplied to the suction surface 41 of the suction cup 40 through the first negative pressure supply line 91.

Between the first fixed flow path 81 of the first negative pressure supply line 91 and the first gas suction device 101, a first switch 111 for switching the gas flow direction is provided on the suction surface 41 of the suction cup 40. The first gas supplier 121 for supplying gas. The first switch 111 switches the first fixed flow path 81 in the following state: a state in which the first gas suction device 101 is opened and the first gas supplier 121 is closed; and the first gas suction device 101 is closed and The state opened to the first gas supplier 121. As the first switching device 111, for example, a three-way switching valve is used. It can also replace the three-way switching valve and use multiple on-off valves.

When the adsorption is canceled, the positive pressure generated by the first gas supplier 121 is supplied from the first switch 111 through the first fixed flow path 81 and the first rotating flow path 71 to the suction surface 41 of the suction cup 40. As a result of this, the release of adsorption can be performed reliably. In addition, instead of the positive pressure, the suction surface 41 of the chuck 40 may be supplied with the same air pressure as the air pressure inside the substrate processing apparatus 1. In addition, a bleed valve may be provided in the middle of the first negative pressure supply line 91 so that the bleed valve can release the negative pressure and release the adsorption.

The second fixed flow path 82 and the second rotating flow path 72 form a second negative pressure supply line 92 for supplying negative pressure to the suction surface 51 of the rotating body 50. The second negative pressure supply line 92 supplies negative pressure to the suction surface 51 of the rotating body 50 through the gas bearing 20 and the spindle 10. At one end of the second negative pressure supply line 92, a second gas suction device 102 for sucking gas is provided. The negative pressure generated by the second gas suction device 102 is supplied to the adsorption surface 51 of the rotating body 50 through the second negative pressure supply line 92.

Between the second fixed flow path 82 of the second negative pressure supply line 92 and the second gas suction device 102, a second switch 112 for switching the gas flow direction is provided on the suction surface of the rotating body 50 51 The second gas supplier 122 for supplying gas. The second switch 112 switches the second fixed flow path 82 in the following state: a state in which the second gas suction device 102 is opened and the second gas supplier 122 is closed; and the second gas suction device 102 is closed and The state opened to the second gas supplier 122.

When the adsorption is cancelled, the positive pressure generated by the second gas supplier 122 is supplied from the second switch 112 through the second fixed flow path 82 and the second rotating flow path 72 to the adsorption surface 51 of the rotor 50. As a result of this, the release of adsorption can be performed reliably. In addition, instead of the positive pressure, the suction surface 51 of the rotating body 50 may be supplied with the same air pressure as the air pressure inside the substrate processing apparatus 1. In addition, a bleed valve may be provided in the middle of the second negative pressure supply line 92 so that the bleed valve can release the negative pressure and release the adsorption.

The third fixed flow path 83 and the third rotating flow path 73 form a third negative pressure supply line 93 for supplying negative pressure to the adsorption surface 61 of the frame adsorption body 60. The third negative pressure supply line 93 supplies negative pressure to the adsorption surface 61 of the frame adsorption body 60 through the gas bearing 20 and the spindle 10. At one end of the third negative pressure supply line 93, a third gas suction device 103 for sucking gas is provided. The negative pressure generated by the third gas suction device 103 is supplied to the adsorption surface 61 of the frame adsorption body 60 through the third negative pressure supply line 93.

The third negative pressure supply line 93 includes a flexible pipe 63 that forms a flow path between the rotating body 50 and the frame adsorption body 60. As shown in FIG. 5, the pipe 63 protrudes radially outward from the rotating body 50, branches into two from the middle, and is attached to the two frame adsorption bodies 60. The arrangement and quantity of the pipe fittings 63 are appropriately selected according to the arrangement and quantity of the frame adsorption body 60.

Between the third fixed flow path 83 of the third negative pressure supply line 93 and the third gas suction device 103, a third switch 113 for switching the gas flow direction is provided to adsorb the frame adsorber 60 A third gas supplier 123 for supplying gas to the surface 61. The third switch 113 switches the third fixed flow path 83 in the following state: a state in which the third gas suction device 103 is opened and the third gas supplier 123 is closed; and the third gas suction device 103 is closed and closed The state opened to the third gas supplier 123.

When the adsorption is canceled, the positive pressure generated by the third gas supplier 123 is supplied from the third switch 113 through the third fixed flow path 83 and the third rotating flow path 73 to the adsorption surface 61 of the frame adsorbent 60 . As a result of this, the release of adsorption can be performed reliably. In addition, instead of the positive pressure, the suction surface 61 of the frame suction body 60 may be supplied with the same air pressure as the air pressure inside the substrate processing apparatus 1. In addition, a bleed valve may be provided in the middle of the third negative pressure supply line 93 so that the bleed valve can release the negative pressure and release the adsorption.

Although the above description is directed to the substrate processing apparatus of the present invention, the present invention is not limited to the above-mentioned embodiment and the like. Various changes, corrections, substitutions, additions, deletions, and combinations can be made within the scope of the patent application. Regarding such content, naturally it also belongs to the technical scope of this creation.

The substrate 2 is not limited to a silicon wafer. The substrate 2 may also be a silicon carbide wafer, a gallium nitride wafer, a gallium oxide wafer, etc., for example. In addition, the substrate 2 may also be a glass substrate. The same applies to the support substrate bonded to the substrate 2.

1: Substrate processing equipment

2: substrate

3: frame

5: Tape

10: Mandrel

11: 1st rotation axis

11a: Axial end face

12: 2nd rotation axis

12a: Axial end face

13: Intermediate shaft

13a: outer peripheral surface

20: Gas bearing

20a: inner peripheral surface

20b: Axial end face

20c: the other end face in the axial direction

21: The first cylinder

22: The second cylinder

30: Gas supplier for bearings

40: Suction cup

41: Adsorption surface

42: Disc body

43: porous body

50: Rotating body

51: Adsorption surface

52: Disc body

53: Porous body

54: positioning pin

60: Frame adsorption body

61: Adsorption surface

62: Robotic Arm

63: pipe fittings

71: The first rotating flow path

72: Second rotating flow path

73: The third rotating flow path

71a, 72a, 73a: opening (opening of the rotating flow path)

81: 1st fixed flow path

82: Second fixed flow path

83: 3rd fixed flow path

81a, 82a, 83a: opening (opening of fixed flow path)

91: The first negative pressure supply line

92: The second negative pressure supply line

93: The third negative pressure supply line

101: The first gas extractor

102: The second gas extractor

103: The third gas extractor

111: Switch 1

112: The second switch

113: 3rd switch

121: The first gas supplier

122: The second gas supplier

123: The third gas supplier

GL: Gas layer

M: Motor

FIG. 1 is a cross-sectional view showing a state in which a substrate is sucked in a substrate processing apparatus of an embodiment. Fig. 2 is a partial enlarged view of Fig. 1. Fig. 3 is a cross-sectional view showing a state where the substrate is removed from the vacuum chuck shown in Fig. 1. Fig. 4 is a cross-sectional view showing a state where the vacuum chuck is removed from the rotary chuck shown in Fig. 3, and is a cross-sectional view taken along the line IV-IV of Fig. 5. FIG. 5 is a top view of the substrate processing apparatus shown in FIG. 4. FIG.

10: Mandrel

11: 1st rotation axis

11a: Axial end face

12: 2nd rotation axis

12a: Axial end face

13: Intermediate shaft

13a: outer peripheral surface

20: Gas bearing

20a: inner peripheral surface

20b: Axial end face

20c: the other end face in the axial direction

21: The first cylinder

22: The second cylinder

30: Gas supplier for bearings

71: The first rotating flow path

72: Second rotating flow path

73: The third rotating flow path

71a, 72a, 73a: opening (opening of the rotating flow path)

81: 1st fixed flow path

82: Second fixed flow path

83: 3rd fixed flow path

81a, 82a, 83a: opening (opening of fixed flow path)

91: The first negative pressure supply line

92: The second negative pressure supply line

93: The third negative pressure supply line

101: The first gas extractor

102: The second gas extractor

103: The third gas extractor

111: Switch 1

112: The second switch

113: 3rd switch

121: The first gas supplier

122: The second gas supplier

123: The third gas supplier

GL: Gas layer

Claims (9)

A substrate processing apparatus includes: a mandrel for rotating a substrate; and a gas bearing that supports the mandrel in a freely rotatable manner via a gas layer; and a plurality of rotating flow paths through which gas flows are formed in the mandrel, A plurality of fixed flow paths through which gas flows are formed inside the gas bearing; the plurality of fixed flow paths are opposed to the different rotating flow paths via the gas layer. The substrate processing apparatus according to claim 1, further comprising: a suction cup which sucks the substrate; and a rotating body which sucks the suction cup; the suction cup is mounted on the spindle via the rotation body; a fixed flow path, and One of the rotating flow paths forms a first negative pressure supply line for supplying negative pressure to the suction surface of the suction cup; the other of the fixed flow path and the other of the rotating flow paths form a negative pressure supply to the suction surface of the rotating body The second negative pressure supply pipeline. The substrate processing apparatus according to claim 2, wherein the rotating body and the suction cup are disc-shaped; the diameter of the rotating body is smaller than the diameter of the suction cup. The substrate processing apparatus according to claim 2 or 3, wherein the diameter of the suction cup is greater than the diameter of the substrate. The substrate processing apparatus according to claim 2 or 3, wherein a first gas suction device for sucking gas is provided at one end of the first negative pressure supply line; and the fixed flow of the first negative pressure supply line Between the passage and the first gas suction device, a first gas supply device that supplies gas to the suction surface of the suction cup is provided via a first switch that switches the flow direction of the gas. The substrate processing apparatus according to claim 2 or 3, wherein the substrate is attached to an adhesive tape covering the opening of the ring-shaped frame; the substrate processing apparatus further includes a frame adsorbing body that is adsorbed on the outer side of the suction cup The frame rotates together with the suction cup; and another fixed flow path and another rotating flow path form a third negative pressure supply line for supplying negative pressure to the adsorption surface of the frame adsorbent. The substrate processing apparatus according to claim 1, wherein the substrate is attached to a tape covering the opening of the ring-shaped frame; the substrate processing apparatus further includes: a suction cup that sucks the substrate and rotates with the spindle And a frame adsorbing body that adsorbs the frame on the outer side of the suction cup and rotates together with the suction cup; a fixed flow path and a rotating flow path form a negative pressure supply line for supplying negative pressure to the suction surface of the suction cup ； The other fixed flow path and the other rotating flow path form a negative pressure supply line for supplying negative pressure to the adsorption surface of the frame adsorption body. The substrate processing apparatus according to any one of claims 1 to 3, wherein the mandrel includes a first rotating shaft, a second rotating shaft, and a diameter between the first rotating shaft and the second rotating shaft An intermediate shaft smaller than the first rotating shaft and the second rotating shaft; the gas bearing is formed in a cylindrical shape, and the axial end face of the first rotating shaft is aligned with the axial end of the second rotating shaft. The gas layer is formed between the end surface and the outer peripheral surface of the intermediate shaft. The substrate processing apparatus according to claim 8, wherein a plurality of the fixed flow paths are opened on the inner peripheral surface of the gas bearing at intervals in the axial direction of the gas bearing; and a plurality of the rotating flow paths are opened in the axial direction of the gas bearing; The outer peripheral surface of the intermediate shaft is opened at an interval in the axial direction of the intermediate shaft, and the entire circumferential direction of the intermediate shaft is opened in a ring shape.

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