TWM606856U - Vapor chamber - Google Patents
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- TWM606856U TWM606856U TW109212682U TW109212682U TWM606856U TW M606856 U TWM606856 U TW M606856U TW 109212682 U TW109212682 U TW 109212682U TW 109212682 U TW109212682 U TW 109212682U TW M606856 U TWM606856 U TW M606856U
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Abstract
Description
本創作涉及散熱領域,尤指一種均溫板。 This creation relates to the field of heat dissipation, especially a kind of uniform temperature plate.
因應現代化需求,電腦與各種電子裝置發展快速且效能不斷地提昇,但在此過程中,高效能之硬體所帶來之散熱問題亦隨之而來。一般而言,電腦與各種電子裝置通常會使用散熱元件來進行散熱,例如使用散熱膏或散熱片來貼附於欲散熱之電子元件上,以將熱吸出並逸散。然而,此種散熱方式效果有限,因而發展出使用工作流體的相變化來促進熱傳導之散熱元件。 In response to modernization needs, computers and various electronic devices have developed rapidly and their performance has been continuously improved. However, in the process, heat dissipation problems caused by high-performance hardware have also followed. Generally speaking, computers and various electronic devices usually use heat-dissipating components to dissipate heat. For example, heat-dissipating paste or heat sinks are used to attach heat to the electronic components to be dissipated to absorb and dissipate heat. However, the effect of this heat dissipation method is limited, so a heat dissipation element that uses the phase change of the working fluid to promote heat conduction has been developed.
然而,上述之散熱元件,例如包含有上板及下板之均溫板,為了應用於行動裝置中而必須予以薄型化,其上板及下板材質常採用銅合金。銅合金之上板及下板經高溫燒結毛細結構或焊接等加熱製程後,必須使銅合金完全退火,此將導致上板及下板有軟化、強度下降之問題。若將上板及下板材質改用鋼材,則其燒結所需環境必須改為高真空或氬氣保護,且燒結所需溫度超過一千度,導致製程難度增加、成本提昇。 However, the above-mentioned heat-dissipating components, such as the temperature equalizing plate including the upper plate and the lower plate, must be thinner in order to be applied to the mobile device, and the upper plate and the lower plate are often made of copper alloy. After the copper alloy upper and lower plates are heated through high-temperature sintering capillary structure or welding, the copper alloy must be fully annealed, which will cause the upper and lower plates to soften and reduce the strength. If the material of the upper and lower plates is changed to steel, the environment required for sintering must be changed to high vacuum or argon protection, and the temperature required for sintering exceeds one thousand degrees, which leads to increased process difficulty and cost.
是以,如何提供一種可解決上述問題之均溫板,是目前業界所亟待克服之課題之一。 Therefore, how to provide a temperature equalizing plate that can solve the above-mentioned problems is one of the problems that the industry urgently needs to overcome.
本創作之主要目的在於提供一種均溫板,包括:第一基板;導流層,設於該第一基板上;第二基板,設於該導流層上方;以及至少一銅層,形成於該第一基板及/或該第二基板之內表面或外表面上。 The main purpose of this creation is to provide a uniform temperature plate, which includes: a first substrate; an air guiding layer arranged on the first substrate; a second substrate arranged above the air guiding layer; and at least one copper layer formed on the On the inner surface or outer surface of the first substrate and/or the second substrate.
於上述均溫板中,該第一基板及/或該第二基板面向該導流層之內表面形成有該銅層。 In the above-mentioned uniform temperature plate, the copper layer is formed on the inner surface of the first substrate and/or the second substrate facing the air guiding layer.
於上述均溫板中,該第一基板及/或該第二基板相對於該內表面之外表面形成有該銅層。 In the above-mentioned uniform temperature plate, the copper layer is formed on the outer surface of the first substrate and/or the second substrate relative to the inner surface.
於上述均溫板中,該第一基板及/或該第二基板之外表面所形成之該銅層上更形成有鎳層。 In the above-mentioned uniform temperature plate, a nickel layer is further formed on the copper layer formed on the outer surface of the first substrate and/or the second substrate.
於上述均溫板中,構成該第一基板及該第二基板之材質係為不鏽鋼、鈦或鈦合金。 In the above-mentioned uniform temperature plate, the material constituting the first substrate and the second substrate is stainless steel, titanium or titanium alloy.
於上述均溫板中,該導流層為顆粒燒結體、網體、纖維或其組合。 In the above-mentioned uniform temperature plate, the flow guiding layer is a granular sintered body, a mesh body, a fiber or a combination thereof.
於上述均溫板中,該第一基板及該導流層之間更形成有複數個液體通道,該複數個液體通道為顆粒燒結體、網體、纖維、溝槽或其組合。 In the above-mentioned uniform temperature plate, a plurality of liquid channels are further formed between the first substrate and the flow guiding layer, and the plurality of liquid channels are particle sintered bodies, mesh bodies, fibers, grooves or combinations thereof.
於上述均溫板中,該溝槽係凹陷於該第一基板之內表面上,且該銅層形成於該溝槽上。 In the above-mentioned uniform temperature plate, the groove is recessed on the inner surface of the first substrate, and the copper layer is formed on the groove.
於上述均溫板中,導流層為具有穿孔的金屬層。 In the above-mentioned uniform temperature plate, the guide layer is a metal layer with perforations.
於上述均溫板中,該第一基板及該第二基板之間係採用焊接來封邊。 In the above-mentioned uniform temperature board, the edges between the first substrate and the second substrate are sealed by welding.
1:均溫板 1: uniform temperature board
11:第一基板 11: The first substrate
111、112:銅層 111, 112: Copper layer
113:鎳層 113: Nickel layer
114:液體通道 114: Liquid channel
115:柱體 115: cylinder
12:導流層 12: Diversion layer
13:第二基板 13: second substrate
131、132:銅層 131, 132: Copper layer
133:鎳層 133: Nickel layer
134:氣流通道 134: Airflow Channel
135:支撐柱 135: support column
圖1為本創作均溫板之第一實施例之剖面示意圖。 Figure 1 is a schematic cross-sectional view of the first embodiment of the creation of a temperature equalizing plate.
圖2為圖1之均溫板之另一實施例之剖面示意圖。 FIG. 2 is a schematic cross-sectional view of another embodiment of the uniform temperature plate of FIG. 1. FIG.
圖3為圖2之均溫板之再一實施例之剖面示意圖。 FIG. 3 is a schematic cross-sectional view of another embodiment of the uniform temperature plate of FIG. 2.
圖4為本創作均溫板之第二實施例之剖面示意圖。 Fig. 4 is a schematic cross-sectional view of the second embodiment of the creative uniform temperature plate.
圖5為圖4之均溫板之另一實施例之剖面示意圖。 FIG. 5 is a schematic cross-sectional view of another embodiment of the uniform temperature plate of FIG. 4.
圖6為圖5之均溫板之再一實施例之剖面示意圖。 6 is a schematic cross-sectional view of still another embodiment of the temperature equalizing plate of FIG. 5.
以下藉由特定之具體實施例加以說明本創作之實施方式,而熟悉此技術之人士可由本說明書所揭示之內容輕易地瞭解本創作之其他優點和功效,亦可藉由其他不同的具體實施例加以施行或應用。 The following specific examples are used to illustrate the implementation of this creation. Those familiar with this technology can easily understand the other advantages and effects of this creation from the content disclosed in this specification, and can also use other different specific embodiments. To implement or apply.
請參閱圖1,本創作之均溫板1包括第一基板11、導流層12及第二基板13,其中,導流層12設於第一基板11上,而第二基板13設於導流層12上方。在本實施例中,本創作之均溫板1更具有至少一銅層111、131形成於第一基板11或該第二基板13之表面上,例如第一基板11面向導流層12之內表面形成有銅層111,而第二基板13面向導流層12之內表面則形成有銅層131。
Please refer to FIG. 1, the
於一實施例中,第二基板13之內表面係凹陷形成有複數個支撐柱135,而複數個支撐柱135之間可形成氣流通道134。另外,銅層131更可同時形成於支撐柱135之表面上。又,在第一基板11接置第二基板13後,支撐柱135可抵接導流層12,使得支撐柱135具備加強支撐氣流通道134之功能。
In one embodiment, the inner surface of the
於一實施例中,銅層111、131可採用熱熔壓、電鍍或濺鍍製程來形成於第一基板11或第二基板13之內表面上。在本實施例中,銅層111、131厚
度範圍為1微米至100微米之間,更佳為8微米至20微米之間,但本創作並不以此為限。
In one embodiment, the
於一實施例中,第一基板11及第二基板13可為不鏽鋼、鈦或鈦合金之材質所製成,而導流層12可為顆粒燒結體、網體、纖維或其組合,但本創作並不以此為限。
In one embodiment, the
於其他實施例中,如圖4所示,第一基板11及導流層12之間更形成有複數個液體通道114,該複數個液體通道114為顆粒燒結體、網體、纖維、溝槽或其組合。其中,顆粒燒結體是指以金屬粉末燒結所形成之具有多個毛細孔或相連通孔洞的組織或結構,網體是指以金屬編織成之具有多個網目的編織網,纖維是指由連續或不連續的金屬細絲所組成者,而銅層111可形成在顆粒燒結體、網體、纖維等結構上。要說明的是,圖4係以溝槽為例繪製,該溝槽是指使用蝕刻製程於第一基板11之表面上,而蝕刻出凹陷於第一基板11之內表面之複數個柱體115,該複數個柱體115彼此之間的間隙可構成相互連通之複數個溝槽。在本實施例中,銅層111可形成在複數個柱體115(或溝槽)之表面上。另外,在本實施例中,導流層12為具有穿孔的金屬層(例如銅)。
In other embodiments, as shown in FIG. 4, a plurality of
於一實施例中,第一基板11及第二基板13之間於相蓋合後,可構成平板型均溫板,並可採用擴散焊接、銅膏硬焊(brazing)或雷射焊接來封邊。
In one embodiment, after the
由上可知,本創作之均溫板1中第一基板11及第二基板13可採用不鏽鋼、鈦或鈦合金,第一基板11及第二基板13之內表面形成有銅層111、131,在進行高溫燒結時,可採用氮氣保護爐(可加微量氫氣),而不需要高真空或氬氣保護爐,除了使製程及材料成本較低之外,均溫板1之整體強度更可高於
習知使用銅合金製作之上板及下板所結合之均溫板。雖第一基板11及第二基板13之外表面未形成有銅層111、131,導致第一基板11及第二基板13之外表面有氧化變色之可能,但可控制製程使其僅在表面氧化變色,而不影響整體效能及可靠性,事後可以酸洗清除氧化部分即可。
It can be seen from the above that the
請參閱圖2所揭露之本創作均溫板1之另一實施例,以下僅說明本實施例與前述實施例之不同處,相同處於此不再贅述。於本實施例中,第一基板11或第二基板13未面向導流層12之外表面可再形成有銅層112、132。形成銅層112、132可防止氮氣保護爐加熱時所導致不鏽鋼、鈦或鈦合金表面有氧化變色之問題。同樣地,圖5所揭露之均溫板1之其他實施例中,第一基板11或第二基板13未面向導流層12之外表面可再形成有銅層112、132。
Please refer to another embodiment of the creative
請參閱圖3所揭露之本創作均溫板1之再一實施例,以下僅說明本實施例與前述實施例之不同處,相同處於此不再贅述。於本實施例中,於第一基板11或第二基板13之外表面所形成之銅層112、132上可再形成有鎳層113、133,例如採用熱熔壓、電鍍或濺鍍製程來形成,且鎳層113、113可使均溫板1更美觀並具備防止氧化效果。同樣地,圖6所揭露之均溫板1之其他實施例中,於第一基板11或第二基板13之外表面所形成之銅層112、132上可再形成有鎳層113、133。
Please refer to still another embodiment of the creative
綜上所述,本創作均溫板中基板可採用不鏽鋼、鈦或鈦合金,來提昇均溫板之整體強度。而基板內表面可形成有銅層,可在高溫燒結時不需要成本高的高真空爐或氬氣保護爐,僅需要氮氣保護爐,生產成本較低。此外,基板外表面更可形成有銅層,或者於銅層上再形成鎳層,可防止基板表面有氧化變色問題產生,且更為美觀。 In summary, stainless steel, titanium or titanium alloy can be used as the base plate of the temperature equalizing plate in this creation to improve the overall strength of the equalizing plate. A copper layer can be formed on the inner surface of the substrate, and a high-cost high vacuum furnace or an argon gas protection furnace is not required during high-temperature sintering, and only a nitrogen gas protection furnace is needed, and the production cost is low. In addition, a copper layer can be formed on the outer surface of the substrate, or a nickel layer can be formed on the copper layer, which can prevent oxidation and discoloration on the surface of the substrate and is more beautiful.
上述實施形態僅為例示性說明本創作之技術原理、特點及其功效,並非用以限制本創作之可實施範疇,任何熟習此技術之人士均可在不違背本創作之精神與範疇下,對上述實施形態進行修飾與改變。然任何運用本創作所教示內容而完成之等效修飾及改變,均仍應為申請專利範圍所涵蓋。而本創作之權利保護範圍,應如下述之申請專利範圍所列。 The above implementation forms are merely illustrative of the technical principles, features and effects of this creation, and are not intended to limit the scope of implementation of this creation. Anyone familiar with this technology can do the same without violating the spirit and scope of this creation. The above embodiments are modified and changed. However, any equivalent modifications and changes made using the content taught in this creation should still be covered by the scope of the patent application. The scope of protection of the rights of this creation should be listed in the following patent scope.
1:均溫板 1: uniform temperature board
11:第一基板 11: The first substrate
111:銅層 111: Copper layer
12:導流層 12: Diversion layer
13:第二基板 13: second substrate
131:銅層 131: Copper layer
134:氣流通道 134: Airflow Channel
135:支撐柱 135: support column
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109212682U TWM606856U (en) | 2020-09-25 | 2020-09-25 | Vapor chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109212682U TWM606856U (en) | 2020-09-25 | 2020-09-25 | Vapor chamber |
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| Publication Number | Publication Date |
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| TWM606856U true TWM606856U (en) | 2021-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW109212682U TWM606856U (en) | 2020-09-25 | 2020-09-25 | Vapor chamber |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI836521B (en) * | 2021-11-18 | 2024-03-21 | 雙鴻科技股份有限公司 | Flexible vapor chamber |
| TWI855918B (en) * | 2023-11-10 | 2024-09-11 | 國立清華大學 | Heat dissipation device |
-
2020
- 2020-09-25 TW TW109212682U patent/TWM606856U/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI836521B (en) * | 2021-11-18 | 2024-03-21 | 雙鴻科技股份有限公司 | Flexible vapor chamber |
| TWI855918B (en) * | 2023-11-10 | 2024-09-11 | 國立清華大學 | Heat dissipation device |
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