TWM602728U - Packaging structure of cascode gallium nitride field effect transistor - Google Patents

Abstract

A cascode gallium nitride field effect transistor packaging structure includes a lead frame on which a gallium nitride field effect transistor and a metal oxide semiconductor are directly arranged. The gallium nitride field effect transistor includes a first substrate directly arranged on the lead frame. The surface of the first substrate has a first drain, a first gate, and a first source. The first drain And the first gate are electrically connected to the lead frame respectively. The metal oxide semiconductor includes a second substrate directly arranged on the lead frame. The surface of the second substrate has a second drain, a second gate, and a second source. The second drain and the first The source electrode is directly electrically connected, and the second gate electrode and the second source electrode are respectively electrically connected to the lead frame.

Description

Packaging structure of cascode gallium nitride field effect transistor

This creation is related to semiconductor transistors, especially a cascode gallium nitride field effect transistor package structure.

Figure 2 shows a conventional cascode GaN field effect transistor package structure, which includes a lead frame 5, and the lead frame 5 is provided with a vertical metal oxide semiconductor 7 and a nitrogen Gallium fluoride field effect transistor 6. The GaN field effect transistor 6 is provided with a drain 61, a gate 62 and a source 63, and the metal oxide semiconductor 7 is provided with a drain 71, a gate 72 and a source 73, of which the vertical metal The drain 71 of the oxide semiconductor 7 is located on the bottom surface. In order to be electrically connected to the source 63 of the gallium nitride field-effect transistor 6, a layer of metal coating 81 with a larger area must be provided under the drain 71 of the semiconductor 7. Therefore, an insulating ceramic substrate 82 must be further provided on the lead frame 5 to separate the metal coating 81 and the lead frame 5. Therefore, the structure and manufacturing process of the conventional cascode gallium nitride field effect transistor are relatively complicated, and there are disadvantages of higher cost.

In view of this, how to improve the above problems is the primary subject that this creation intends to solve.

The main purpose of this creation is to provide a cascode GaN field-effect transistor packaging structure, which uses a horizontal semiconductor to directly electrically connect the drain of the semiconductor to the source of the GaN transistor, which is simplified The effect of structure.

In order to achieve the aforementioned purpose, this creation provides a cascode gallium nitride field-effect transistor package structure, which includes: A lead frame A GaN field effect transistor includes a first substrate directly arranged on the lead frame, the surface of the first substrate has a first drain, a first gate, and a first source, wherein The first drain and the first gate are respectively electrically connected to the lead frame; A metal oxide semiconductor includes a second substrate directly arranged on the lead frame. The surface of the second substrate has a second drain, a second gate and a second source, wherein the second The drain is directly electrically connected to the first source, and the second gate and the second source are respectively electrically connected to the lead frame.

In one embodiment, the lead frame, the gallium nitride field effect transistor and the metal oxide semiconductor are covered with a package.

Preferably, the lead frame is provided with a pin extending out of the package body.

The above objectives and advantages of this creation are not difficult to gain an in-depth understanding from the detailed description and drawings of the selected embodiments below.

Please refer to Figure 1. The package structure of the cascode gallium nitride field effect transistor provided by this creation is shown. It includes a lead frame 1 on which a gallium nitride field effect transistor is directly arranged. Crystal 2 (GaN FET) and a horizontal metal oxide semiconductor 3 (MOS), wherein the GaN field effect transistor 2 has a first substrate 21 directly bonded to the lead frame 1. The first substrate A first drain 22, a first gate 23, and a first source 24 are provided on the front side of 21. The first drain 22 and the first gate 23 are electrically connected to the lead frame 1 respectively; The metal oxide semiconductor 3 has a second base body 31 directly bonded to the lead frame 1. A second drain electrode 32, a second gate electrode 33, and a second source electrode 34 are provided on the surface of the second base body 31. The second gate 33 and the second source 34 are electrically connected to the lead frame 1 respectively.

In addition, the first source 24 of the GaN field effect transistor 2 is directly electrically connected to the second drain 32 of the metal oxide semiconductor 3 to form a cascode form. Then, a package body 4 is used to cover the lead frame 1, the GaN field effect transistor 2 and the metal oxide semiconductor 3, and a pin 11 extending from the package body 4 is extended from the lead frame 1. .

With the above structure, this creation makes the first source 24 of the GaN field-effect transistor 2 and the second drain 32 of the metal oxide semiconductor 3 directly electrically connected, thus omitting the conventional transistor The structure of the metal coating and the ceramic substrate achieves the purpose of simplifying the structure and manufacturing process, and further reducing the cost.

However, the disclosure of the above embodiments is only used to illustrate the creation, not to limit the creation, and the replacement of equivalent components should still belong to the scope of the creation.

In summary, those skilled in the art can understand that this creation can indeed achieve the aforementioned purpose, and that it has actually complied with the provisions of the Patent Law, so Yan filed an application in accordance with the law.

1: Lead frame 11: Pin 2: Gallium nitride field effect transistor 21: The first substrate 22: The first drain 23: The first gate 24: The first source 3: Metal oxide semiconductor 31: The second substrate 32: The second drain 33: The second gate 34: The second source 4: Package body 5: Lead frame 6: GaN field effect transistor 61: Dip pole 62: Gate 63: Source 7: Metal Oxide Semiconductor 71: Dip pole 72: Gate 73: Source 81: Metal coating 82: Ceramic substrate

Picture 1 is a schematic diagram of the structure of the creation; Figure 2 is a schematic diagram of the conventional structure.

1: Lead frame

11: Pin

2: GaN field effect transistor

21: The first substrate

22: The first drain

23: first gate

24: first source

3: metal oxide semiconductor

31: second substrate

32: second drain

33: second gate

34: second source

4: Package body

Claims (3)

A cascode gallium nitride field effect transistor packaging structure, which includes: A lead frame A GaN field effect transistor includes a first substrate directly arranged on the lead frame, the surface of the first substrate has a first drain, a first gate, and a first source, wherein The first drain and the first gate are respectively electrically connected to the lead frame; A metal oxide semiconductor includes a second substrate directly arranged on the lead frame. The surface of the second substrate has a second drain, a second gate and a second source, wherein the second The drain is directly electrically connected to the first source, and the second gate and the second source are respectively electrically connected to the lead frame. The package structure of the cascode gallium nitride field effect transistor according to claim 1, wherein the lead frame, the gallium nitride field effect transistor and the metal oxide semiconductor are covered with a package body. The package structure of the cascode gallium nitride field-effect transistor according to claim 2, wherein the lead frame is provided with a pin extending out of the package body.

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