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TWM674067U - Device for measuring wafer diameter - Google Patents

Device for measuring wafer diameter

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Publication number
TWM674067U
TWM674067U TW114205863U TW114205863U TWM674067U TW M674067 U TWM674067 U TW M674067U TW 114205863 U TW114205863 U TW 114205863U TW 114205863 U TW114205863 U TW 114205863U TW M674067 U TWM674067 U TW M674067U
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TW
Taiwan
Prior art keywords
wafer
distance
detection unit
measurement
diameter
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Application number
TW114205863U
Other languages
Chinese (zh)
Inventor
林修緯
許仁瑋
龔聖翔
張仁明
何國誠
Original Assignee
台達電子工業股份有限公司
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Application filed by 台達電子工業股份有限公司 filed Critical 台達電子工業股份有限公司
Priority to TW114205863U priority Critical patent/TWM674067U/en
Publication of TWM674067U publication Critical patent/TWM674067U/en

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  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A device for measuring wafer diameter includes a wafer platform, a standard bracket and a detection unit. The wafer platform has a central axis and is used to dispose the wafer thereon. The standard bracket is fixedly connected to the wafer platform, wherein the standard bracket includes a measurement portion, and the measurement portion and the central axis of the wafer platform has a first distance. The detection unit is used to obtain a second distance between the measurement portion and the edge of the wafer. The first distance and the second distance together determine the diameter of the wafer.

Description

晶圓直徑量測裝置Wafer diameter measurement equipment

本案係關於一種晶圓直徑量測裝置,尤指一種提供高準確度直徑量測結果的晶圓直徑量測裝置。This case relates to a wafer diameter measurement device, particularly a wafer diameter measurement device that provides high-accuracy diameter measurement results.

一般的晶圓直徑量測中,常見的架構是利用尋邊器配合可移動的晶圓平台來達成。當晶圓平台承載晶圓移動至量測定點後,設置於尋邊器上的檢測單元會量測出晶圓被尋邊器之邊緣遮蔽的距離,之後,再根據預設之晶圓平台的中心而得出尋邊器之邊緣與中心的距離,最後,藉由加總兩距離計算出晶圓半徑,以得出直徑。In typical wafer diameter measurement, a common configuration utilizes an edge finder in conjunction with a movable wafer stage. Once the wafer stage, carrying the wafer, moves to the measurement point, a detection unit mounted on the edge finder measures the distance the wafer is obscured by the edge of the edge finder. The distance between the edge and center of the edge finder, based on the pre-set center of the wafer stage, is then calculated. Finally, the wafer radius is calculated by summing these two distances to arrive at the diameter.

在此種量測方法中,由於晶圓平台為移動形式,因此,其量測準確度完全取得於晶圓平台是否可精準地移動至預設的量測定點,以準確計算出尋邊器之邊緣與晶圓平台間的距離。換言之,晶圓平台移動至量測定點時,其位置的重現精準度直接影響晶圓平台之中心至尋邊器之邊緣的距離。在此前提下,為了提高準確度,通常必須於每次移動後對晶圓平台之定位進行精準的校正,此則導致校正程序繁複,也大幅增加時間成本。In this measurement method, since the wafer stage is mobile, its measurement accuracy depends entirely on whether the wafer stage can accurately move to the preset measurement point to accurately calculate the distance between the edge of the edge finder and the wafer stage. In other words, when the wafer stage moves to the measurement point, the repeatability of its position directly affects the distance from the center of the wafer stage to the edge of the edge finder. Under this premise, in order to improve accuracy, the positioning of the wafer stage must usually be precisely calibrated after each movement, which makes the calibration process complicated and significantly increases time costs.

因此,實有必要開發一種晶圓直徑量測裝置,以改善上述習知技術的缺失。Therefore, it is necessary to develop a wafer diameter measurement device to improve the above-mentioned deficiencies in the known technology.

本案之目的在於提供一種晶圓直徑量測裝置,其可有效降低操作成本,且同時提高晶圓直徑之量測準確度。The purpose of this case is to provide a wafer diameter measurement device that can effectively reduce operating costs and at the same time improve the measurement accuracy of wafer diameter.

為達上述目的,本案提供一種晶圓直徑量測裝置,包含晶圓平台、標準支架及檢測單元。晶圓平台具有中心軸,並用以設置晶圓。標準支架固定連接至晶圓平台,其中標準支架包含量測部,且量測部與晶圓平台的中心軸間具有第一距離。檢測單元用以取得量測部與晶圓之邊緣間的第二距離,且第一距離與第二距離共同決定晶圓的直徑。To achieve the aforementioned objectives, this invention provides a wafer diameter measurement device comprising a wafer platform, a standard support, and a detection unit. The wafer platform has a central axis and is used to position a wafer. The standard support is fixedly connected to the wafer platform, wherein the standard support includes a measuring portion, and a first distance is defined between the measuring portion and the central axis of the wafer platform. The detection unit is used to determine a second distance between the measuring portion and the edge of the wafer. The first and second distances together determine the wafer diameter.

在一實施例中,晶圓的直徑為第一距離與第二距離的差值。In one embodiment, the diameter of the wafer is the difference between the first distance and the second distance.

在一實施例中,第一距離為定值。In one embodiment, the first distance is a constant value.

在一實施例中,晶圓平台設置於橫移軸上,以在裝載位置與量測位置之間移動,且檢測單元在晶圓平台位於量測位置時取得第二距離。In one embodiment, the wafer stage is disposed on a transverse axis to move between a loading position and a measurement position, and the detection unit obtains the second distance when the wafer stage is located at the measurement position.

在一實施例中,該第二距離為該量測部與該晶圓之邊緣間的最短距離,且該第二距離落在該檢測單元的檢測範圍內。In one embodiment, the second distance is the shortest distance between the measurement portion and the edge of the wafer, and the second distance falls within the detection range of the detection unit.

在一實施例中,量測部實施為複數個量測部,以分別對應複數種晶圓尺寸。In one embodiment, the measurement unit is implemented as a plurality of measurement units corresponding to a plurality of wafer sizes respectively.

在一實施例中,標準支架實施為複數個標準支架之其中一者,且複數個標準支架分別對應複數種晶圓尺寸。In one embodiment, the standard holder is implemented as one of a plurality of standard holders, and the plurality of standard holders respectively correspond to a plurality of wafer sizes.

在一實施例中,檢測單元設置於尋邊器上。In one embodiment, the detection unit is disposed on the edge finder.

在一實施例中,檢測單元包含下列的至少其中之一,包含照相機以及光檢測單元。In one embodiment, the detection unit includes at least one of the following: a camera and a light detection unit.

本案晶圓直徑量測裝置藉由將位置固定之標準支架設置於晶圓平台上的方式,有效減少晶圓平台位置的校正程序及相應的時間成本,且同時亦可達成具高準確度的直徑量測結果,是極具優勢的設計。This wafer diameter measurement device utilizes a fixed standard bracket mounted on the wafer platform, effectively reducing the wafer platform position calibration process and the associated time and cost. This advantageous design also enables highly accurate diameter measurement results.

體現本案特徵與優點的一些典型實施例將在後段的說明中詳細敘述。應理解的是本創作能夠在不同的態樣上具有各種的變化,然其皆不脫離本創作的範圍,且其中的說明及圖示在本質上係當作說明之用,而非用以限制本創作。Typical embodiments that embody the features and advantages of this invention will be described in detail in the following description. It should be understood that this invention is capable of various variations in different forms, all of which remain within the scope of this invention, and that the descriptions and illustrations herein are intended for illustrative purposes only and are not intended to limit this invention.

請參閱第1圖、第2圖及第3圖。第1圖顯示根據本案實施例之晶圓直徑量測裝置的示意圖,第2圖顯示根據本案實施例之晶圓直徑量測裝置的側視圖,以及第3圖顯示根據本案實施例之晶圓直徑量測裝置承載晶圓的側視圖。本案晶圓直徑量測裝置1包含晶圓平台10、標準支架20、及檢測單元30。晶圓平台10用以設置待量測直徑的晶圓40。標準支架20固定連接至晶圓平台10上,例如,藉由鎖固的方式固定,且標準支架20上設有量測部21。量測部21的位置位在承載於晶圓平台10上之晶圓40的外緣,亦即,鄰近晶圓40外緣的位置。檢測單元30用以檢測設置於其檢測範圍內之物體的位置。在一實施例中,檢測單元30可設置於晶圓尋邊器(Wafer Aligner )上。在其他實施例中,檢測單元30亦可設置於其他需測量晶圓直徑之應用場合中的其他裝置上。Please refer to Figures 1, 2, and 3. Figure 1 shows a schematic diagram of a wafer diameter measurement device according to an embodiment of the present invention, Figure 2 shows a side view of the wafer diameter measurement device according to an embodiment of the present invention, and Figure 3 shows a side view of the wafer diameter measurement device according to an embodiment of the present invention carrying a wafer. The wafer diameter measurement device 1 of the present invention includes a wafer platform 10, a standard support 20, and a detection unit 30. The wafer platform 10 is used to place a wafer 40 whose diameter is to be measured. The standard support 20 is fixedly connected to the wafer platform 10, for example, by locking, and a measuring portion 21 is provided on the standard support 20. The measurement unit 21 is located near the outer edge of the wafer 40 supported on the wafer stage 10. The detection unit 30 is used to detect the position of objects within its detection range. In one embodiment, the detection unit 30 can be installed on a wafer aligner. In other embodiments, the detection unit 30 can also be installed on other devices in other applications requiring wafer diameter measurement.

晶圓平台10設置於橫移軸50上,以在裝載位置及量測位置間移動。裝載位置係為晶圓平台10裝載待測直徑之晶圓40的位置,以及量測位置係為量測所承載之晶圓40之直徑的位置。其中量測位置亦指標準支架20之量測部21及與量測部21最接近之晶圓40邊緣皆落在檢測單元30之檢測範圍內的位置。The wafer stage 10 is mounted on a traverse axis 50 and moves between a loading position and a measurement position. The loading position is where the wafer stage 10 loads a wafer 40 of a desired diameter, while the measurement position is where the diameter of the loaded wafer 40 is measured. The measurement position also refers to the position where the measurement portion 21 of the standard holder 20 and the edge of the wafer 40 closest to the measurement portion 21 are both within the detection range of the inspection unit 30.

在上述配置的基礎下,如第3圖所示,由於標準支架20固定連接至晶圓平台10,因此,量測部21與晶圓平台10之中心軸C之間的第一距離D1為定值,固定不變。在此情形下,欲得到晶圓40的直徑,只需再取得量測部21與晶圓40邊緣之間的第二距離D2,即可藉由將第一距離D1減去第二距離D2計算出晶圓40的半徑,而進一步獲得晶圓40的直徑。因此,晶圓40的直徑是由第一距離D1與第二距離D2共同決定。Based on the above configuration, as shown in Figure 3, since the standard bracket 20 is fixedly connected to the wafer platform 10, the first distance D1 between the measurement unit 21 and the center axis C of the wafer platform 10 is a fixed value and remains unchanged. In this case, to obtain the diameter of the wafer 40, it is only necessary to obtain the second distance D2 between the measurement unit 21 and the edge of the wafer 40. By subtracting the second distance D2 from the first distance D1, the radius of the wafer 40 can be calculated, and the diameter of the wafer 40 can be further obtained. Therefore, the diameter of the wafer 40 is determined by the first distance D1 and the second distance D2.

在此,第二距離D2係指中心軸C與量測部21之連線與晶圓40邊緣的交會點以及量測部21之間的距離,亦即,量測部21與晶圓40邊緣間的最短距離。也就是,量測部21、晶圓40邊緣之第二距離D2量測位置、及中心軸C是位在同一直線上。Here, the second distance D2 refers to the distance between the intersection of the line connecting the central axis C and the measurement portion 21 and the edge of the wafer 40, and the measurement portion 21. In other words, the shortest distance between the measurement portion 21 and the edge of the wafer 40. In other words, the measurement position of the second distance D2 at the edge of the wafer 40, the measurement portion 21, and the central axis C are all on the same straight line.

更具體而言,在本案中,由於設置於晶圓平台10上之標準支架20的位置固定,使得無論晶圓平台10於橫移軸50上的位置為何,量測部21與中心軸C之間的第一距離D1皆為不變,因而可省下習知技術中需精準校正晶圓平台10至預設定點位置的繁複校正程序及時間成本,同時亦可維持量測之準確度。在此配置下,只需藉由檢測單元30於每次量測時取得量測部21與晶圓40邊緣間的第二距離D2,即可藉由已知的第一距離D1與所測得的第二距離D2之間的差值而迅速計算出晶圓40的半徑,進而得出直徑。More specifically, in this case, because the standard support 20 mounted on the wafer stage 10 is fixed in position, the first distance D1 between the measurement portion 21 and the center axis C remains constant regardless of the wafer stage 10's position on the traverse axis 50. This eliminates the complex and time-consuming calibration process required to precisely calibrate the wafer stage 10 to a preset fixed position, as is conventional practice, while maintaining measurement accuracy. With this configuration, the inspection unit 30 simply obtains the second distance D2 between the measurement portion 21 and the edge of the wafer 40 during each measurement. The difference between the known first distance D1 and the measured second distance D2 can be used to quickly calculate the radius of the wafer 40, and thus the diameter.

換言之,在本案之晶圓直徑量測裝置1的架構下,藉由設置固定於晶圓平台10上之標準支架20,習知技術中可能影響量測準確度的變數可被排除,因而可有效減少為了避免變數影響而執行之校正晶圓平台10定位的程序,並降低時間成本。當晶圓平台10藉由橫移軸50而移動至量測位置時,無需再如習知技術為了確保晶圓平台10位於預設定點而進行精準校正程序,即可測得精準的直徑,是兼具時間成本效益及量測準確度的設計。In other words, in the structure of the wafer diameter measurement device 1 of the present invention, by providing a standard support 20 fixed to the wafer platform 10, variables that may affect measurement accuracy in conventional techniques are eliminated. This effectively reduces the need for correcting the positioning of the wafer platform 10 to avoid the influence of these variables, thereby reducing time and cost. When the wafer platform 10 is moved to the measurement position via the traverse axis 50, there is no need for the precise calibration process required in conventional techniques to ensure that the wafer platform 10 is positioned at the preset point. Accurate diameter measurements can be obtained, resulting in a design that combines time and cost-effectiveness with high measurement accuracy.

在實際應用時,在一實施例中,第二距離D2的取得方式是,晶圓40於量測期間由晶圓平台10的設置平面帶動旋轉,且檢測單元30於晶圓40旋轉期間檢測量測部21與晶圓40邊緣間距離的連續值,之後藉由代入演算式計算而獲得第二距離D2。藉此,可排除晶圓40之中心點與晶圓平台10之中心軸C兩者間位置錯位所可能帶來的誤差,進一步提高量測準確度。In practical applications, in one embodiment, the second distance D2 is obtained by rotating the wafer 40 relative to the wafer stage 10 during measurement. The detection unit 30 continuously measures the distance between the measurement portion 21 and the edge of the wafer 40 during the rotation. This value is then substituted into a calculation formula to calculate the second distance D2. This eliminates errors caused by misalignment between the center point of the wafer 40 and the center axis C of the wafer stage 10, further improving measurement accuracy.

標準支架20上的量測部可實施為複數個,以對應不同尺寸的待測晶圓。在一實施例中,如第4圖所示,標準支架20’可實施為包含複數個量測部21a、21b、21c,以分別對應各種尺寸的晶圓,例如,12吋、10吋、8吋晶圓。如此可使相對應的量測部與各晶圓邊緣適當地落在檢測單元30的檢測範圍內。需說明地是,只要量測部的高度不干擾晶圓的設置,其設置的數量及位置皆不受限制,可依實際實施情形變化。在其他實施例中,也可實施為不同尺寸的晶圓40對應採用不同的標準支架20,例如,實施為標準支架20可更換的形式,同樣有助於使相對應的量測部與各晶圓邊緣適當地落在檢測單元30的檢測範圍內。另外,量測部21與晶圓40邊緣之間的距離亦可依實際應用情形而改變,只需落在檢測單元30的檢測範圍內即可,同樣沒有限制。The standard holder 20 can be implemented with multiple measurement sections to accommodate wafers of varying sizes. In one embodiment, as shown in Figure 4 , the standard holder 20' can be implemented to include multiple measurement sections 21a, 21b, and 21c, corresponding to wafer sizes of various sizes, such as 12-inch, 10-inch, and 8-inch wafers. This ensures that the corresponding measurement sections and the edges of each wafer fall appropriately within the detection range of the inspection unit 30. It should be noted that as long as the height of the measurement sections does not interfere with the placement of the wafer, the number and location of the measurement sections are not limited and can vary depending on the actual implementation. In other embodiments, different standard holders 20 may be used to correspond to wafers 40 of different sizes. For example, a replaceable standard holder 20 can also be implemented to ensure that the corresponding measurement portion and each wafer edge are properly within the detection range of the detection unit 30. Furthermore, the distance between the measurement portion 21 and the edge of the wafer 40 can also be varied depending on the actual application, as long as it falls within the detection range of the detection unit 30. There is no limitation.

檢測單元30可根據需求實施為各種類型的檢測單元。舉例而言,在一實施例中,檢測單元30可實施為包含光發射器與光接收器的光檢測單元;在另一實施例中,檢測單元30也可實施為照相機。因此,沒有限制,只要可取得量測部21與晶圓40邊緣之間的第二距離D2者,皆屬本案範疇。The detection unit 30 can be implemented as various types of detection units as needed. For example, in one embodiment, the detection unit 30 can be implemented as a light detection unit including a light emitter and a light receiver. In another embodiment, the detection unit 30 can also be implemented as a camera. Therefore, there is no limitation; any device that can obtain the second distance D2 between the measurement unit 21 and the edge of the wafer 40 falls within the scope of this invention.

綜上,本案晶圓直徑量測裝置藉由於移動的晶圓平台上設置固定之標準支架的方式,提供不受晶圓平台移動影響的量測基準位置及計算晶圓直徑的定值基礎,因而可在無需精準校正晶圓平台之量測位置的前提下,精準測得晶圓直徑,大幅簡化校正程序及時間成本,更有助於提昇晶圓直徑量測的準確度。In summary, the wafer diameter measurement device in this case, by installing a fixed standard bracket on a moving wafer platform, provides a measurement reference position that is unaffected by the movement of the wafer platform and a fixed value basis for calculating the wafer diameter. Therefore, the wafer diameter can be accurately measured without the need for precise calibration of the wafer platform's measurement position, significantly simplifying the calibration process and time cost, and further helping to improve the accuracy of wafer diameter measurement.

須注意,上述僅是為說明本案而提出之較佳實施例,本案不限於所述之實施例,本案之範圍由如附專利申請範圍決定。且本案得由熟習此技術之人士任施匠思而為諸般修飾,然皆不脫如附專利申請範圍所欲保護者。It should be noted that the above examples are merely preferred embodiments for the purpose of illustrating this invention. This invention is not limited to the examples described. The scope of this invention is determined by the scope of the attached patent application. Furthermore, this invention is subject to various modifications conceived by those skilled in the art, without departing from the intended scope of protection of the attached patent application.

1:晶圓直徑量測裝置10:晶圓平台20、20’:標準支架21、21a、21b、21c:量測部30:檢測單元40:晶圓50:橫移軸C:中心軸D1:第一距離D2:第二距離1: Wafer diameter measurement device 10: Wafer stage 20, 20': Standard bracket 21, 21a, 21b, 21c: Measuring unit 30: Detection unit 40: Wafer 50: Transverse axis C: Center axis D1: First distance D2: Second distance

第1圖顯示根據本案實施例之晶圓直徑量測裝置的示意圖。第2圖顯示根據本案實施例之晶圓直徑量測裝置的側視圖。第3圖顯示根據本案實施例之晶圓直徑量測裝置承載晶圓的側視圖。第4圖顯示根據本案另一實施例之標準支架的示意圖。FIG1 is a schematic diagram of a wafer diameter measurement apparatus according to an embodiment of the present invention. FIG2 is a side view of the wafer diameter measurement apparatus according to an embodiment of the present invention. FIG3 is a side view of the wafer diameter measurement apparatus according to an embodiment of the present invention carrying a wafer. FIG4 is a schematic diagram of a standard holder according to another embodiment of the present invention.

10:晶圓平台 10: Wafer platform

20:標準支架 20: Standard bracket

21:量測部 21: Measurement Department

30:檢測單元 30: Detection unit

40:晶圓 40: Wafer

50:橫移軸 50: Transverse axis

C:中心軸 C: Center axis

D1:第一距離 D1: First Distance

D2:第二距離 D2: Second distance

Claims (9)

一種晶圓直徑量測裝置,包含:一晶圓平台,具有一中心軸,並用以設置一晶圓;一標準支架,固定連接至該晶圓平台,其中該標準支架包含一量測部,且該量測部與該晶圓平台的該中心軸間具有一第一距離;以及一檢測單元,用以取得該量測部與該晶圓之邊緣間的一第二距離,且該第一距離與該第二距離共同決定該晶圓的一直徑。A wafer diameter measurement device includes: a wafer platform having a central axis and used to place a wafer; a standard bracket fixedly connected to the wafer platform, wherein the standard bracket includes a measuring portion, and a first distance is defined between the measuring portion and the central axis of the wafer platform; and a detection unit for obtaining a second distance between the measuring portion and the edge of the wafer, wherein the first distance and the second distance together determine the diameter of the wafer. 如請求項1所述之晶圓直徑量測裝置,其中該晶圓的該直徑為該第一距離與該第二距離的差值。The wafer diameter measurement apparatus as described in claim 1, wherein the diameter of the wafer is the difference between the first distance and the second distance. 如請求項1所述之晶圓直徑量測裝置,其中該第一距離為一定值。The wafer diameter measurement device as described in claim 1, wherein the first distance is a constant value. 如請求項1所述之晶圓直徑量測裝置,其中該晶圓平台設置於一橫移軸上,以在一裝載位置與一量測位置之間移動,且該檢測單元在該晶圓平台位於該量測位置時取得該第二距離。The wafer diameter measurement device as described in claim 1, wherein the wafer platform is set on a lateral axis to move between a loading position and a measurement position, and the detection unit obtains the second distance when the wafer platform is located at the measurement position. 如請求項1所述之晶圓直徑量測裝置,其中該第二距離為該量測部與該晶圓之邊緣間的最短距離,且該第二距離落在該檢測單元的檢測範圍內。The wafer diameter measurement device as described in claim 1, wherein the second distance is the shortest distance between the measuring part and the edge of the wafer, and the second distance falls within the detection range of the detection unit. 如請求項1所述之晶圓直徑量測裝置,其中該量測部實施為複數個量測部,以分別對應複數種晶圓尺寸。The wafer diameter measurement device as described in claim 1, wherein the measurement part is implemented as a plurality of measurement parts to correspond to a plurality of wafer sizes respectively. 如請求項1所述之晶圓直徑量測裝置,其中該標準支架實施為複數個標準支架之其中一者,且該複數個標準支架分別對應複數種晶圓尺寸。The wafer diameter measurement device as described in claim 1, wherein the standard bracket is implemented as one of a plurality of standard brackets, and the plurality of standard brackets respectively correspond to a plurality of wafer sizes. 如請求項1所述之晶圓直徑量測裝置,其中該檢測單元設置於一尋邊器上。A wafer diameter measurement device as described in claim 1, wherein the detection unit is arranged on an edge finder. 如請求項1所述之晶圓直徑量測裝置,其中該檢測單元包含下列的至少其中之一,包含一照相機以及一光檢測單元。The wafer diameter measurement device as described in claim 1, wherein the detection unit includes at least one of the following: a camera and a light detection unit.
TW114205863U 2025-06-09 2025-06-09 Device for measuring wafer diameter TWM674067U (en)

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