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TWM669271U - Wafer inspection system - Google Patents

Wafer inspection system Download PDF

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Publication number
TWM669271U
TWM669271U TW114200490U TW114200490U TWM669271U TW M669271 U TWM669271 U TW M669271U TW 114200490 U TW114200490 U TW 114200490U TW 114200490 U TW114200490 U TW 114200490U TW M669271 U TWM669271 U TW M669271U
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Taiwan
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wafer
module
defect detection
chamber
inspection system
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TW114200490U
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Chinese (zh)
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湯逢成
廖偉捷
宋柏辰
趙玄巽
何國誠
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台達電子工業股份有限公司
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Priority to TW114200490U priority Critical patent/TWM669271U/en
Publication of TWM669271U publication Critical patent/TWM669271U/en

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Abstract

A wafer inspection system is provided, including a manipulator module for moving a wafer, a positioning module for positioning the wafer, a resistance measurement module for measuring the resistance value of the wafer, a determining module, a first defect detection module, and a second defect detection module. The determining module is configured to drive the manipulator module to move the wafer to the first defect detection module or the second defect detection module according to the resistance value of the wafer.

Description

晶圓檢測系統Wafer Inspection System

本新型是有關於一種晶圓檢測系統。更具體地來說,本新型有關於一種包含複數個缺陷檢測模組的晶圓檢測系統。The present invention relates to a wafer inspection system. More specifically, the present invention relates to a wafer inspection system comprising a plurality of defect inspection modules.

在習知的晶圓檢測系統中,對於電阻值較高之晶圓往往難以利用紅外線檢測機進行檢測,而使用X光檢測機則具有速度較慢以及成本較高的缺點。基於前述理由,目前常見的作法之一是先透過人工方式先對晶圓進行電阻值量測,然後再根據量測到的電阻值來選擇使用紅外線檢測機或是X光檢測機,藉以對晶圓進行孔洞或缺陷檢測。In conventional wafer inspection systems, it is often difficult to inspect wafers with higher resistance values using infrared inspection machines, while using X-ray inspection machines has the disadvantages of being slow and costly. Based on the above reasons, one of the common practices is to first measure the resistance value of the wafer manually, and then choose to use an infrared inspection machine or an X-ray inspection machine based on the measured resistance value to inspect the wafer for holes or defects.

然而,前述習知作法不僅需要投入較高的人力成本,且容易產生資料比對錯誤以及誤用機台的風險;此外,由於習知作法因需要使用多種不同機台,所以晶圓必須進行重複上、下料的動作,從而容易增加晶圓的磨損機率。However, the above-mentioned conventional method not only requires high manpower costs, but also easily generates risks of data matching errors and misuse of machines. In addition, since the conventional method requires the use of multiple different machines, the wafer must be repeatedly loaded and unloaded, which easily increases the probability of wafer wear.

有鑑於此,如何提供一種能降低成本且能提升效率的晶圓檢測系統始成為本新型技術領域研發人員之一重要課題。In view of this, how to provide a wafer inspection system that can reduce costs and improve efficiency has become an important issue for researchers in this new technology field.

一種晶圓檢測系統,包括一搬運模組、一定位模組、一阻值量測模組、一判斷模組、一第一缺陷檢測模組以及一第二缺陷檢測模組。前述搬運模組可用以抓取並移動一晶圓,前述定位模組可用以定位前述晶圓。前述阻值量測模組可對經過前述定位模組定位後之前述晶圓進行一電阻值之量測。前述判斷模組可判斷前述電阻值是否大於一門檻值。A wafer inspection system includes a transport module, a positioning module, a resistance measurement module, a judgment module, a first defect detection module and a second defect detection module. The transport module can be used to grab and move a wafer, and the positioning module can be used to position the wafer. The resistance measurement module can measure the resistance value of the wafer after being positioned by the positioning module. The judgment module can judge whether the resistance value is greater than a threshold value.

於一實施例中,當前述電阻值小於前述門檻值時,前述第一缺陷檢測模組對前述晶圓進行一第一缺陷檢測。另一方面,當前述電阻值大於前述門檻值時,前述第二缺陷檢測模組對進行前述晶圓進行一第二缺陷檢測。In one embodiment, when the resistance value is less than the threshold value, the first defect detection module performs a first defect detection on the wafer. On the other hand, when the resistance value is greater than the threshold value, the second defect detection module performs a second defect detection on the wafer.

於一實施例中,前述第一缺陷檢測模組包括一紅外線檢測單元,用以對前述晶圓進行一第一缺陷檢測,且前述第二缺陷檢測模組包括一X光檢測單元,用以對進行前述晶圓進行一第二缺陷檢測。In one embodiment, the first defect detection module includes an infrared detection unit for performing a first defect detection on the wafer, and the second defect detection module includes an X-ray detection unit for performing a second defect detection on the wafer.

於一實施例中,前述第一缺陷檢測模組更包括一第一腔室,且前述第二缺陷檢測模組更包括一第二腔室,其中前述紅外線檢測單元設置於前述第一腔室內,且前述X光檢測單元設置於前述第二腔室內。In one embodiment, the first defect detection module further includes a first chamber, and the second defect detection module further includes a second chamber, wherein the infrared detection unit is disposed in the first chamber, and the X-ray detection unit is disposed in the second chamber.

於一實施例中,前述晶圓檢測系統更包括一預處理區,且前述定位模組以及前述阻值量測模組設置於前述預處理區內。In one embodiment, the wafer inspection system further includes a pre-processing area, and the positioning module and the resistance measurement module are disposed in the pre-processing area.

於一實施例中,前述搬運模組位於前述定位模組以及前述阻值量測模組之間。In one embodiment, the transport module is located between the positioning module and the resistance measurement module.

於一實施例中,前述預處理區鄰接前述第一腔室以及前述第二腔室。In one embodiment, the pre-treatment area is adjacent to the first chamber and the second chamber.

於一實施例中,前述第二腔室鄰接前述第一腔室。In one embodiment, the second chamber is adjacent to the first chamber.

於一實施例中,前述定位模組包含一晶圓對準器(Wafer Aligner)。In one embodiment, the positioning module includes a wafer aligner.

於一實施例中,前述阻值量測模組包含一渦電流感測器(Eddy current sensor)或四點探針電阻量測計(Four-Point Probes Resistance Meter)。In one embodiment, the resistance measurement module includes an Eddy current sensor or a Four-Point Probes Resistance Meter.

於一實施例中,前述判斷模組和前述阻值量測模組透過有線或無線方式進行數據傳輸。In one embodiment, the determination module and the resistance measurement module perform data transmission via a wired or wireless method.

以下說明本新型實施例之晶圓檢測系統。然而,可輕易了解本新型實施例提供許多合適的新型概念而可實施於廣泛的各種特定背景。所揭示的特定實施例僅僅用於說明以特定方法使用本新型,並非用以侷限本新型的範圍。The following describes a wafer inspection system of the novel embodiment. However, it is easy to understand that the novel embodiment provides many suitable novel concepts and can be implemented in a wide variety of specific contexts. The specific embodiments disclosed are only used to illustrate the use of the novel in a specific way and are not used to limit the scope of the novel.

除非另外定義,在此使用的全部用語(包括技術及科學用語)具有與此篇揭露所屬之一般技藝者所通常理解的相同涵義。能理解的是這些用語,例如在通常使用的字典中定義的用語,應被解讀成具有一與相關技術及本揭露的背景或上下文一致的意思,而不應以一理想化或過度正式的方式解讀,除非在此特別定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and this disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined herein.

有關本新型之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下各實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,實施方式中所使用的方向用語是用來說明並非用來限制本新型。The above-mentioned and other technical contents, features and effects of the present invention will be clearly presented in the detailed description of the preferred embodiment with reference to the drawings below. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only for reference to the directions of the attached drawings. Therefore, the directional terms used in the embodiments are used to illustrate and are not used to limit the present invention.

首先請參閱第1圖,其中第1圖表示本新型一實施例之晶圓檢測系統100的示意圖。First, please refer to FIG. 1 , which is a schematic diagram of a wafer inspection system 100 according to an embodiment of the present invention.

如第1圖所示,本新型一實施例之晶圓檢測系統100主要係用以檢測晶圓的孔洞及缺陷,其包含有一預處理區P、一搬運模組R、一存放單元11、一定位模組12、一阻值量測模組13、一判斷模組14、一第一缺陷檢測模組M1以及一第二缺陷檢測模組M2。As shown in FIG. 1 , a wafer inspection system 100 of an embodiment of the present invention is mainly used to detect holes and defects in wafers, and includes a pre-processing area P, a transport module R, a storage unit 11, a positioning module 12, a resistance measurement module 13, a judgment module 14, a first defect detection module M1, and a second defect detection module M2.

前述存放單元11位在預處理區P之一側,且其可包含一或數個晶圓盒。具體而言,本實施例中之存放單元11係包含有兩個晶圓盒111、112,用以存放晶圓W,前述搬運模組R、阻值量測模組13以及判斷模組14則是設置在預處理區P內,其中前述搬運模組R可包含一機械手臂,用以將晶圓盒111、112中的晶圓W取出,或者可將晶圓W放入晶圓盒111、112內。The storage unit 11 is located at one side of the pre-processing area P, and it may include one or more wafer boxes. Specifically, the storage unit 11 in this embodiment includes two wafer boxes 111 and 112 for storing wafers W, and the transport module R, the resistance measurement module 13, and the judgment module 14 are arranged in the pre-processing area P, wherein the transport module R may include a robot arm for taking out the wafers W from the wafer boxes 111 and 112, or for putting the wafers W into the wafer boxes 111 and 112.

應了解的是,前述搬運模組R更可將晶圓W選擇性地移動到前述定位模組12、阻值量測模組13、第一缺陷檢測模組M1或者第二缺陷檢測模組M2,且前述搬運模組R的位置係介於定位模組12和阻值量測模組13之間,如此一來即能夠有效利用預處理區P的內部空間,從而有助於達成晶圓檢測系統100的小型化。It should be understood that the aforementioned transport module R can selectively move the wafer W to the aforementioned positioning module 12, the resistance measurement module 13, the first defect detection module M1 or the second defect detection module M2, and the position of the aforementioned transport module R is between the positioning module 12 and the resistance measurement module 13, so that the internal space of the pre-processing area P can be effectively utilized, thereby helping to achieve the miniaturization of the wafer inspection system 100.

此外,從第1圖中可以看出,判斷模組14係設置在預處理區P之一側,其中前述判斷模組14例如可包含中央處理器(CPU)及/或記憶體等積體電路,且判斷模組14和阻值量測模組13之間可透過有線或無線方式進行數據傳輸。In addition, as can be seen from FIG. 1, the judgment module 14 is disposed on one side of the pre-processing area P, wherein the judgment module 14 may include, for example, an integrated circuit such as a central processing unit (CPU) and/or a memory, and data transmission may be performed between the judgment module 14 and the resistance measurement module 13 via wired or wireless means.

於一實施例中,前述判斷模組14亦可設置在預處理區P或者第一、第二缺陷檢測模組M1、M2的其他側邊,或者亦可與預處理區P以及第一、第二缺陷檢測模組M1、M2分離設置,並不以本新型實施例所揭露者為限。In one embodiment, the aforementioned judgment module 14 may also be disposed in the pre-processing area P or other sides of the first and second defect detection modules M1 and M2, or may also be separated from the pre-processing area P and the first and second defect detection modules M1 and M2, and is not limited to those disclosed in the present embodiment.

前述預處理區P、第一缺陷檢測模組M1以及第二缺陷檢測模組M2係彼此相鄰設置,其中第一缺陷檢測模組M1具有一第一腔室C1以及一紅外線檢測單元L1,前述紅外線檢測單元L1設置於第一腔室C1內,且前述第一腔室C1可透過一第一閘門G1而與前述預處理區P相連通。The pre-processing zone P, the first defect detection module M1 and the second defect detection module M2 are arranged adjacent to each other, wherein the first defect detection module M1 has a first chamber C1 and an infrared detection unit L1, the infrared detection unit L1 is arranged in the first chamber C1, and the first chamber C1 can be connected to the pre-processing zone P through a first gate G1.

同理,前述第二缺陷檢測模組M2具有一第二腔室C2以及一X光檢測單元L2,前述X光檢測單元L2設置於第二腔室C2內,且前述第二腔室C2可透過一第二閘門G2而與前述預處理區P相連通。Similarly, the second defect detection module M2 has a second chamber C2 and an X-ray detection unit L2. The X-ray detection unit L2 is disposed in the second chamber C2, and the second chamber C2 can be connected to the pre-processing area P through a second gate G2.

接著請參閱第2圖,其中第2圖表示搬運模組R將晶圓W移動到定位模組12的示意圖。Next, please refer to FIG. 2 , which is a schematic diagram showing the transport module R moving the wafer W to the positioning module 12 .

如第2圖所示,當欲對存放單元11內的晶圓W進行孔洞或缺陷檢測時,可先利用搬運模組R抓取晶圓盒111或晶圓盒112內的晶圓W,接著再將該晶圓W移動搬運到定位模組12,以進行晶圓W之位置及角度的對準及校正。As shown in FIG. 2 , when a wafer W in the storage unit 11 is to be inspected for holes or defects, the transport module R can first be used to grab the wafer W in the wafer box 111 or the wafer box 112 , and then the wafer W is moved and transported to the positioning module 12 to align and correct the position and angle of the wafer W.

舉例而言,前述定位模組12包含有用以定位晶圓W之一晶圓對準器(Wafer Aligner),例如晶圓尋邊器(Flat finder)或晶圓尋缺角器(Notch finder),用以偵測並調整晶圓W的角度及/或位置。For example, the positioning module 12 includes a wafer aligner for positioning the wafer W, such as a flat finder or a notch finder, to detect and adjust the angle and/or position of the wafer W.

再請參閱第3圖,其中第3圖表示搬運模組R將晶圓W移動到阻值量測模組13的示意圖。Please refer to FIG. 3 , which is a schematic diagram showing the transport module R moving the wafer W to the resistance measurement module 13 .

如第3圖所示,當前述晶圓W經過定位模組12的校正定位後,搬運模組R可再將晶圓W移動搬運到阻值量測模組13,並透過阻值量測模組13對晶圓W進行一電阻值之量測。As shown in FIG. 3 , after the wafer W is calibrated and positioned by the positioning module 12 , the transport module R can move the wafer W to the resistance measurement module 13 , and the resistance measurement module 13 can measure the resistance of the wafer W.

舉例而言,前述阻值量測模組13可包含一渦電流感測器(Eddy current sensor)或四點探針電阻量測計(Four-Point Probes Resistance Meter),從而可量測前述晶圓W的電阻值,其中前述電阻值資訊可透過有線或無線方式傳送到判斷模組14,且前述判斷模組14可根據該電阻值的大小傳送一驅動訊號至該搬運模組R,從而可利用搬運模組R將晶圓W運送到第一缺陷檢測模組M1或者第二缺陷檢測模組M2,以進行後續的孔洞或缺陷檢測。For example, the resistance measurement module 13 may include an Eddy current sensor or a Four-Point Probes Resistance Meter, so as to measure the resistance value of the wafer W, wherein the resistance value information may be transmitted to the judgment module 14 via a wired or wireless method, and the judgment module 14 may transmit a driving signal to the transport module R according to the resistance value, so that the transport module R may be used to transport the wafer W to the first defect detection module M1 or the second defect detection module M2 for subsequent hole or defect detection.

接著請參閱第4圖,其中第4圖表示搬運模組R將晶圓W移動至第一缺陷檢測模組M1的示意圖。Please refer to FIG. 4 , which is a schematic diagram showing the transport module R moving the wafer W to the first defect detection module M1 .

如第4圖所示,當前述判斷模組14獲得阻值量測模組13所量測到之晶圓W的電阻值資訊後,判斷模組14即可判斷該電阻值是否小於一預設之門檻值,倘若該電阻值小於該門檻值,則判斷模組14可傳送一第一驅動訊號至搬運模組R,此時搬運模組R即可將晶圓W移動通過第一閘門G1而到達第一缺陷檢測模組M1,並可利用第一腔室C1內部的紅外線檢測單元L1對晶圓W進行一第一缺陷檢測。As shown in FIG. 4 , after the aforementioned judgment module 14 obtains the resistance value information of the wafer W measured by the resistance measurement module 13, the judgment module 14 can judge whether the resistance value is less than a preset threshold value. If the resistance value is less than the threshold value, the judgment module 14 can transmit a first driving signal to the transport module R. At this time, the transport module R can move the wafer W through the first gate G1 to reach the first defect detection module M1, and can use the infrared detection unit L1 inside the first chamber C1 to perform a first defect detection on the wafer W.

再請參閱第5圖,其中第5圖表示搬運模組R將晶圓W移動至第二缺陷檢測模組M2的示意圖。Please refer to FIG. 5 , which is a schematic diagram showing the transport module R moving the wafer W to the second defect detection module M2 .

如第5圖所示,當前述判斷模組14獲得阻值量測模組13所量測到之晶圓W的電阻值資訊後,若該電阻值大於該門檻值,則判斷模組14會傳送一第二驅動訊號至搬運模組R,此時搬運模組R即可將晶圓W移動通過第二閘門G2而到達第二缺陷檢測模組M2,並可利用第二腔室C2內部的X光檢測單元L2對晶圓W進行一第二缺陷檢測。As shown in FIG. 5 , when the judgment module 14 obtains the resistance value information of the wafer W measured by the resistance measurement module 13, if the resistance value is greater than the threshold value, the judgment module 14 transmits a second driving signal to the transport module R. At this time, the transport module R can move the wafer W through the second gate G2 to reach the second defect detection module M2, and can use the X-ray detection unit L2 inside the second chamber C2 to perform a second defect detection on the wafer W.

需特別說明的是,當晶圓W透過前述紅外線檢測單元L1或者X光檢測單元L2進行檢測之後,可再利用搬運模組R將前述晶圓W移動搬運回到存放單元11的晶圓盒111或晶圓盒112中,以利於進行後續的處理作業。It should be particularly noted that after the wafer W is inspected by the infrared inspection unit L1 or the X-ray inspection unit L2, the transport module R can be used to move the wafer W back to the wafer box 111 or the wafer box 112 of the storage unit 11 to facilitate subsequent processing operations.

接著請一併參閱第1~6圖,其中第6圖表示晶圓檢測系統100對晶圓W所進行之檢測作業流程圖。Please refer to FIGS. 1 to 6 , wherein FIG. 6 is a flow chart showing the inspection operation flow of the wafer inspection system 100 on the wafer W.

如前所述,當欲利用本新型之晶圓檢測系統100對晶圓W進行缺陷檢測時,可先利用搬運模組R將晶圓W從存放單元11移入預處理區P內以完成入料程序(如第1圖以及第6圖中之步驟S1所示),接著再透過搬運模組R將晶圓W運送到定位模組12,並藉由定位模組12對晶圓W進行一定位程序(如第2圖以及第6圖中之步驟S2所示)。As mentioned above, when the wafer W is to be inspected for defects using the novel wafer inspection system 100, the wafer W can first be moved from the storage unit 11 into the pre-processing area P using the transport module R to complete the loading process (as shown in step S1 in FIG. 1 and FIG. 6 ), and then the wafer W is transported to the positioning module 12 through the transport module R, and a positioning process is performed on the wafer W through the positioning module 12 (as shown in step S2 in FIG. 2 and FIG. 6 ).

之後,搬運模組R可再將晶圓W運送到阻值量測模組13,並透過阻值量測模組13對晶圓W進行一電阻值量測程序(如第3圖以及第6圖中之步驟S3所示),其中晶圓W的電阻值資訊會傳送到判斷模組14,且前述判斷模組14可根據該電阻值的大小驅使搬運模組R將晶圓W運送到第一缺陷檢測模組M1或者第二缺陷檢測模組M2(如第6圖中之步驟S4所示)。Afterwards, the transport module R can transport the wafer W to the resistance measurement module 13, and perform a resistance measurement procedure on the wafer W through the resistance measurement module 13 (as shown in step S3 in Figures 3 and 6), wherein the resistance value information of the wafer W will be transmitted to the judgment module 14, and the aforementioned judgment module 14 can drive the transport module R to transport the wafer W to the first defect detection module M1 or the second defect detection module M2 according to the size of the resistance value (as shown in step S4 in Figure 6).

在完成前述程序後,倘若該電阻值小於一門檻值,則搬運模組R會將晶圓W移動到第一缺陷檢測模組M1,並可利用第一腔室C1內部的紅外線檢測單元L1對晶圓W進行一第一缺陷檢測(如第4圖以及第6圖中之步驟S51所示)。After completing the above procedures, if the resistance value is less than a threshold value, the transport module R will move the wafer W to the first defect detection module M1, and the infrared detection unit L1 inside the first chamber C1 can be used to perform a first defect detection on the wafer W (as shown in step S51 in FIG. 4 and FIG. 6 ).

相反地,倘若該電阻值大於該門檻值,則搬運模組R會將晶圓W移動到第二缺陷檢測模組M2,並利用第二腔室C2內部的X光檢測單元L2對晶圓W進行一第二缺陷檢測(如第5圖以及第6圖中之步驟S52所示)。On the contrary, if the resistance value is greater than the threshold value, the transport module R will move the wafer W to the second defect detection module M2 and perform a second defect detection on the wafer W using the X-ray detection unit L2 inside the second chamber C2 (as shown in step S52 in FIGS. 5 and 6 ).

最後,當前述晶圓W完成檢測時,可再利用搬運模組R將前述晶圓W運送回到存放單元11的晶圓盒111或晶圓盒112內,以完成整個晶圓檢測流程(如第6圖中之步驟S6所示)。Finally, when the wafer W has been inspected, the transport module R can be used to transport the wafer W back to the wafer box 111 or the wafer box 112 of the storage unit 11 to complete the entire wafer inspection process (as shown in step S6 in FIG. 6 ).

綜上所述,本新型提供一種晶圓檢測系統100,可先量測晶圓W的電阻值,再根據晶圓W的電阻值資訊而選擇性地將晶圓W移動到第一缺陷檢測模組M1或第二缺陷檢測模組M2。如此一來,不同電阻值之晶圓W可自動地篩檢並分別使用紅外線檢測單元L1或者X光檢測單元L2來進行缺陷檢測,從而可大幅縮減人力成本,且能夠有效降低資料比對錯誤以及誤用機台的風險。In summary, the present invention provides a wafer inspection system 100 that can first measure the resistance value of the wafer W, and then selectively move the wafer W to the first defect inspection module M1 or the second defect inspection module M2 according to the resistance value information of the wafer W. In this way, wafers W with different resistance values can be automatically screened and defect inspected using the infrared inspection unit L1 or the X-ray inspection unit L2, respectively, thereby greatly reducing labor costs and effectively reducing the risk of data comparison errors and misuse of the machine.

另一方面,本新型藉由將不同的檢測模組整合於同一機台系統中,不僅可避免晶圓重複上、下料的動作以減少晶圓的磨損機率,此外更可大幅提高生產效率並有助於達成晶圓檢測系統的小型化。On the other hand, the new type integrates different inspection modules into the same machine system, which not only avoids repeated loading and unloading of wafers to reduce the probability of wafer wear, but also greatly improves production efficiency and helps to achieve miniaturization of wafer inspection systems.

雖然本新型的實施例及其優點已揭露如上,但應該瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本新型之精神和範圍內,當可作更動、替代與潤飾。此外,本新型之保護範圍並未侷限於說明書內所述特定實施例中的製程、機器、製造、物質組成、裝置、方法及步驟,任何所屬技術領域中具有通常知識者可從本新型揭示內容中理解現行或未來所發展出的製程、機器、製造、物質組成、裝置、方法及步驟,只要可以在此處所述實施例中實施大抵相同功能或獲得大抵相同結果皆可根據本新型使用。因此,本新型之保護範圍包括上述製程、機器、製造、物質組成、裝置、方法及步驟。另外,每一申請專利範圍構成個別的實施例,且本新型之保護範圍也包括各個申請專利範圍及實施例的組合。Although the embodiments and advantages of the present invention have been disclosed above, it should be understood that any person with ordinary knowledge in the relevant technical field can make changes, substitutions and modifications without departing from the spirit and scope of the present invention. In addition, the scope of protection of the present invention is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person with ordinary knowledge in the relevant technical field can understand the current or future developed processes, machines, manufacturing, material compositions, devices, methods and steps from the disclosure of the present invention, as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described here, they can be used according to the present invention. Therefore, the scope of protection of the present invention includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods and steps. In addition, each patent application constitutes a separate embodiment, and the scope of protection of the present invention also includes the combination of each patent application and embodiment.

雖然本新型已以較佳實施例揭露於上,然其並非用以限定本新型,任何熟習此項工藝者,在不脫離本新型之精神和範圍內,當可作些許之更動與潤飾,因此本新型之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this technology can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

100:晶圓檢測系統 P:預處理區 R:搬運模組 11:存放單元 111:晶圓盒 112:晶圓盒 12:定位模組 13:阻值量測模組 14:判斷模組 C1:第一腔室 C2:第二腔室 G1:第一閘門 G2:第二閘門 L1:紅外線檢測單元 L2:X光檢測單元 M1:第一缺陷檢測模組 M2:第二缺陷檢測模組 S1:步驟 S2:步驟 S3:步驟 S4:步驟 S51:步驟 S52:步驟 S6:步驟 W:晶圓 100: Wafer inspection system P: Pre-treatment area R: Transport module 11: Storage unit 111: Wafer box 112: Wafer box 12: Positioning module 13: Resistance measurement module 14: Judgment module C1: First chamber C2: Second chamber G1: First gate G2: Second gate L1: Infrared inspection unit L2: X-ray inspection unit M1: First defect inspection module M2: Second defect inspection module S1: Step S2: Step S3: Step S4: Step S51: Step S52: Step S6: Step W: Wafer

第1圖表示本新型一實施例之晶圓檢測系統100的示意圖。 第2圖表示搬運模組R將晶圓W移動到定位模組12的示意圖。 第3圖表示搬運模組R將晶圓W移動到阻值量測模組13的示意圖。 第4圖表示搬運模組R將晶圓W移動至第一缺陷檢測模組M1的示意圖。 第5圖表示搬運模組R將晶圓W移動至第二缺陷檢測模組M2的示意圖。 第6圖表示晶圓檢測系統100對晶圓W所進行之檢測作業流程圖。 FIG. 1 is a schematic diagram of a wafer inspection system 100 of an embodiment of the present invention. FIG. 2 is a schematic diagram of a transport module R moving a wafer W to a positioning module 12. FIG. 3 is a schematic diagram of a transport module R moving a wafer W to a resistance measurement module 13. FIG. 4 is a schematic diagram of a transport module R moving a wafer W to a first defect detection module M1. FIG. 5 is a schematic diagram of a transport module R moving a wafer W to a second defect detection module M2. FIG. 6 is a flowchart of the inspection operation performed by the wafer inspection system 100 on the wafer W.

100:晶圓檢測系統 100: Wafer inspection system

P:預處理區 P: Pretreatment area

R:搬運模組 R: Transport module

11:存放單元 11: Storage unit

111:晶圓盒 111: Wafer box

112:晶圓盒 112: Wafer box

12:定位模組 12: Positioning module

13:阻值量測模組 13: Resistance measurement module

14:判斷模組 14: Judgment module

C1:第一腔室 C1: First chamber

C2:第二腔室 C2: Second chamber

G1:第一閘門 G1: First gate

G2:第二閘門 G2: Second gate

L1:紅外線檢測單元 L1: Infrared detection unit

L2:X光檢測單元 L2: X-ray detection unit

M1:第一缺陷檢測模組 M1: First defect detection module

M2:第二缺陷檢測模組 M2: Second defect detection module

W:晶圓 W: Wafer

Claims (10)

一種晶圓檢測系統,包括: 一搬運模組,用以抓取並移動一晶圓; 一定位模組,用以定位該晶圓; 一阻值量測模組,對經過該定位模組定位後之該晶圓進行一電阻值之量測; 一判斷模組,判斷該電阻值是否大於一門檻值; 一第一缺陷檢測模組,其中當該電阻值小於該門檻值時,該第一缺陷檢測模組對該晶圓進行一第一缺陷檢測;以及 一第二缺陷檢測模組,其中當該電阻值大於該門檻值時,該第二缺陷檢測模組對進行該晶圓進行一第二缺陷檢測。 A wafer inspection system includes: a transport module for grabbing and moving a wafer; a positioning module for positioning the wafer; a resistance measurement module for measuring the resistance value of the wafer after being positioned by the positioning module; a judgment module for judging whether the resistance value is greater than a threshold value; a first defect detection module, wherein when the resistance value is less than the threshold value, the first defect detection module performs a first defect detection on the wafer; and a second defect detection module, wherein when the resistance value is greater than the threshold value, the second defect detection module performs a second defect detection on the wafer. 如請求項1之晶圓檢測系統,其中該第一缺陷檢測模組包括一紅外線檢測單元,用以對該晶圓進行一第一缺陷檢測,且該第二缺陷檢測模組包括一X光檢測單元,用以對進行該晶圓進行一第二缺陷檢測。A wafer inspection system as claimed in claim 1, wherein the first defect inspection module includes an infrared inspection unit for performing a first defect inspection on the wafer, and the second defect inspection module includes an X-ray inspection unit for performing a second defect inspection on the wafer. 如請求項2之晶圓檢測系統,其中該第一缺陷檢測模組更包括一第一腔室,且該第二缺陷檢測模組更包括一第二腔室,其中該紅外線檢測單元設置於該第一腔室內,且該X光檢測單元設置於該第二腔室內。A wafer inspection system as claimed in claim 2, wherein the first defect inspection module further includes a first chamber, and the second defect inspection module further includes a second chamber, wherein the infrared inspection unit is disposed in the first chamber, and the X-ray inspection unit is disposed in the second chamber. 如請求項3之晶圓檢測系統,其中該晶圓檢測系統更包括一預處理區,且該定位模組以及該阻值量測模組設置於該預處理區內。As in claim 3, the wafer inspection system further includes a pre-processing area, and the positioning module and the resistance measurement module are arranged in the pre-processing area. 如請求項4之晶圓檢測系統,其中該搬運模組位於該定位模組以及該阻值量測模組之間。A wafer inspection system as claimed in claim 4, wherein the transport module is located between the positioning module and the resistance measurement module. 如請求項4之晶圓檢測系統,其中該預處理區鄰接該第一腔室以及該第二腔室。A wafer inspection system as claimed in claim 4, wherein the pre-processing area is adjacent to the first chamber and the second chamber. 如請求項6之晶圓檢測系統,其中該第二腔室鄰接該第一腔室。A wafer inspection system as claimed in claim 6, wherein the second chamber is adjacent to the first chamber. 如請求項1之晶圓檢測系統,其中該定位模組包含一晶圓對準器(Wafer Aligner)。A wafer inspection system as claimed in claim 1, wherein the positioning module includes a wafer aligner. 如請求項1之晶圓檢測系統,其中該阻值量測模組包含一渦電流感測器(Eddy current sensor)或四點探針電阻量測計(Four-Point Probes Resistance Meter)。A wafer inspection system as claimed in claim 1, wherein the resistance measurement module includes an Eddy current sensor or a Four-Point Probes Resistance Meter. 如請求項1之晶圓檢測系統,其中該判斷模組和該阻值量測模組透過有線或無線方式進行數據傳輸。As in claim 1, the wafer inspection system, wherein the judgment module and the resistance measurement module transmit data via wired or wireless means.
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