[go: up one dir, main page]

TWM663864U - Chip package and substrate thereof - Google Patents

Chip package and substrate thereof Download PDF

Info

Publication number
TWM663864U
TWM663864U TW113209249U TW113209249U TWM663864U TW M663864 U TWM663864 U TW M663864U TW 113209249 U TW113209249 U TW 113209249U TW 113209249 U TW113209249 U TW 113209249U TW M663864 U TWM663864 U TW M663864U
Authority
TW
Taiwan
Prior art keywords
opening
shielding portion
conductive section
conductive
substrate
Prior art date
Application number
TW113209249U
Other languages
Chinese (zh)
Inventor
王沛雯
黃信豪
黃國樑
江顯鴻
Original Assignee
頎邦科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 頎邦科技股份有限公司 filed Critical 頎邦科技股份有限公司
Priority to TW113209249U priority Critical patent/TWM663864U/en
Publication of TWM663864U publication Critical patent/TWM663864U/en

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A chip package includes a substrate, a chip and a heat spreader. The substrate includes a carrier, a circuit layer and a solder resist layer. The circuit layer is provided on the carrier and includes circuit lines each having an inner lead, a first conductive section and a second conductive section. The solder resist layer covers the circuit layer and includes a first opening, at least one second opening and a covering portion located between the first and second openings. The first opening exposes the inner lead, the covering portion covers the first conductive section, and the second opening exposes the second conductive section. The chip is electrically connected to the inner lead, and the heat spreader is attached to the second conductive section visible from the second opening by an electrically insulative adhesive to improve heat dissipation performance and flexibility of the chip package.

Description

封裝構造及其基板Package structure and substrate

本創作是關於一種封裝構造及其基板,尤其是一種藉由散熱片接觸基板的線路層,以增加導熱效能及可撓度的封裝構造及其基板。This invention relates to a packaging structure and a substrate thereof, in particular to a packaging structure and a substrate thereof that increase thermal conductivity and flexibility by contacting a circuit layer of a substrate with a heat sink.

隨著積體電路的運算速度提升,會造成晶片的溫度上升,為降低晶片的溫度,會在晶片上設置一散熱片,以進行散熱,然由於晶片微小化,散熱片的效率無法因應晶片升溫的速度,而導致晶片損壞或影響運算速率。As the computing speed of integrated circuits increases, the temperature of the chip will rise. In order to reduce the temperature of the chip, a heat sink is installed on the chip to dissipate heat. However, due to the miniaturization of chips, the efficiency of the heat sink cannot keep up with the speed of chip temperature rise, resulting in chip damage or affecting the computing speed.

本創作的主要目的是在提供一種封裝構造,藉由一散熱片覆蓋一基板及一晶片,並使該散熱片貼附於一防焊層顯露出的一線路層,以增加該封裝構造的散熱效能。The main purpose of this invention is to provide a packaging structure, in which a substrate and a chip are covered with a heat sink, and the heat sink is attached to a circuit layer exposed by a solder mask to increase the heat dissipation performance of the packaging structure.

本創作之一種封裝構造包含一基板、一晶片及一散熱片,該基板具有一載體、一線路層及一防焊層,該線路層設置於該載體,該線路層包含複數個線路,該線路具一內引腳、一第一導接段、一第二導接段及一外引腳,該第一導接段位於該內引腳與該第二導接段之間,該第二導接段位於該第一導接段與該外引腳之間,該防焊層覆蓋該線路層,該防焊層具有一第一開口、一第一遮蔽部及至少一第二開口,該第一遮蔽部位於該第一開口及該第二開口之間,該第一開口顯露出該內引腳,該第一遮蔽部覆蓋該第一導接段,該第二開口顯露出該第二導接段,該晶片設置於該基板,並電性連接該內引腳,該散熱片覆蓋該基板及該晶片,該散熱片具有一散熱層及一絕緣黏膠層,該散熱層以該絕緣黏膠層貼附於該第二開口顯露的該第二導接段。A packaging structure of the invention includes a substrate, a chip and a heat sink. The substrate has a carrier, a circuit layer and a solder mask. The circuit layer is arranged on the carrier. The circuit layer includes a plurality of circuits. The circuit has an inner pin, a first conductive section, a second conductive section and an outer pin. The first conductive section is located between the inner pin and the second conductive section, and the second conductive section is located between the first conductive section and the outer pin. The solder mask covers the circuit layer. The solder mask has a first opening. , a first shielding portion and at least one second opening, the first shielding portion is between the first opening and the second opening, the first opening exposes the inner lead, the first shielding portion covers the first conductive section, the second opening exposes the second conductive section, the chip is disposed on the substrate and electrically connected to the inner lead, the heat sink covers the substrate and the chip, the heat sink has a heat dissipation layer and an insulating adhesive layer, the heat dissipation layer is attached to the second conductive section exposed by the second opening with the insulating adhesive layer.

本創作之一種封裝構造的基板包含一載體、一線路層及一防焊層,該線路層設置於該載體,該線路層包含複數個線路,該線路具一內引腳、一第一導接段、一第二導接段及一外引腳,該第一導接段位於該內引腳與該第二導接段之間,該第二導接段位於該第一導接段與該外引腳之間,該防焊層覆蓋該線路層,該防焊層具有一第一開口、一第一遮蔽部及至少一第二開口,該第一遮蔽部位於該第一開口及該第二開口之間,該第一開口顯露出該內引腳,以供電性連接一晶片,該第一遮蔽部覆蓋該第一導接段,該第二開口顯露出該第二導接段,以供一散熱片的一散熱層以一絕緣黏膠層貼附於該第二開口顯露的該第二導接段。A substrate of a packaging structure of the present invention comprises a carrier, a circuit layer and a solder mask layer. The circuit layer is arranged on the carrier. The circuit layer comprises a plurality of circuits. The circuit has an inner pin, a first conductive section, a second conductive section and an outer pin. The first conductive section is located between the inner pin and the second conductive section, and the second conductive section is located between the first conductive section and the outer pin. The solder mask layer covers the circuit layer. The solder mask has a first opening, a first shielding portion and at least one second opening, the first shielding portion is between the first opening and the second opening, the first opening exposes the inner lead for electrically connecting a chip, the first shielding portion covers the first conductive section, and the second opening exposes the second conductive section for a heat sink layer to be attached to the second conductive section exposed by the second opening with an insulating adhesive layer.

本新型藉由該散熱層以該絕緣黏膠層貼附於該第二開口顯露的該第二導接段,以使該晶片運作時所產生的熱,能夠由該第二導接段傳導至貼附於該第二導接段的該散熱片,以增加該封裝構造的散熱效能。The heat dissipation layer is attached to the second conductive section exposed by the second opening by the insulating adhesive layer, so that the heat generated by the chip during operation can be transferred from the second conductive section to the heat sink attached to the second conductive section, thereby increasing the heat dissipation performance of the packaging structure.

請參閱第1及2圖,為本創作的一實施例,請參閱第3及4圖,為本創作的不同實施例,本創作的一種封裝構造100包含一基板110、一晶片120及一散熱片130,該基板110具有一載體111、一線路層112及一防焊層113,該載體111的材料可選自由聚醯亞胺(Polyimide,PI)或其它可撓性材料,但不以此為限制,該線路層112設置於該載體111,該防焊層113覆蓋該線路層112,該晶片120設置於該基板110並電性連接該線路層112,該散熱片130覆蓋該基板110及該晶片120。Please refer to Figures 1 and 2 for an embodiment of the present invention, and please refer to Figures 3 and 4 for different embodiments of the present invention. A packaging structure 100 of the present invention includes a substrate 110, a chip 120 and a heat sink 130. The substrate 110 has a carrier 111, a circuit layer 112 and a solder mask 113. The material of the carrier 111 can be selected from polyimide (PI) or other flexible materials, but is not limited to this. The circuit layer 112 is disposed on the carrier 111, the solder mask 113 covers the circuit layer 112, the chip 120 is disposed on the substrate 110 and electrically connected to the circuit layer 112, and the heat sink 130 covers the substrate 110 and the chip 120.

請參閱第1及2圖,該線路層112包含複數個線路L,各該線路L具一內引腳L1、一第一導接段L2、一第二導接段L3及一外引腳L4,該第一導接段L2位於該內引腳L1與該第二導接段L3之間,該第二導接段L3位於該第一導接段L2與該外引腳L4之間,在本實施例中,各該線路L另具一第三導接段L5,該第三導接L5段位於該第二導接段L3與該外引腳L4之間。Please refer to Figures 1 and 2. The circuit layer 112 includes a plurality of circuits L. Each of the circuits L has an inner pin L1, a first conductive segment L2, a second conductive segment L3 and an outer pin L4. The first conductive segment L2 is located between the inner pin L1 and the second conductive segment L3. The second conductive segment L3 is located between the first conductive segment L2 and the outer pin L4. In this embodiment, each of the circuits L further has a third conductive segment L5. The third conductive segment L5 is located between the second conductive segment L3 and the outer pin L4.

請參閱第1及2圖,該防焊層113具有一第一開口113a、一第一遮蔽部113b及至少一第二開口113c,該第一遮蔽部113b位於該第一開口113a及該第二開口113c之間,在本實施例中,該第一遮蔽部113b環繞該第一開口113a,該第二開口113c環繞該第一開口113a及該第一遮蔽部113b,請參閱第4圖,在不同的本實施例中,該第二開口113c位於該第一開口113a的一側邊,或者,當該防焊層113具有複數個第二開口113c時,該些第二開口113c可不相互連接,且可設置於該第一開口113a的不同側邊。Please refer to Figures 1 and 2, the solder mask 113 has a first opening 113a, a first shielding portion 113b and at least one second opening 113c, the first shielding portion 113b is located between the first opening 113a and the second opening 113c, in this embodiment, the first shielding portion 113b surrounds the first opening 113a, and the second opening 113c surrounds the first opening 113a and the first shielding portion 113b, please refer to Figure 4, in different embodiments of the present invention, the second opening 113c is located on one side of the first opening 113a, or, when the solder mask 113 has a plurality of second openings 113c, the second openings 113c may not be connected to each other and may be arranged on different sides of the first opening 113a.

請參閱第1及2圖,該第一開口113a顯露出該內引腳L1,該第一遮蔽部113b覆蓋該第一導接段L2,該第二開口113c顯露出該第二導接段L3,在本實施例中,該防焊層113具有一第二遮蔽部133d,該第二開口113c位於該第一遮蔽部113b與該第二遮蔽部133d之間,該第二遮蔽部133d覆蓋該第三導接段L5,並顯露出該外引腳L4,該外引腳L4用以與外部電子元件(圖未繪出,如面板等)電性連接。Please refer to Figures 1 and 2. The first opening 113a reveals the inner lead L1, the first shielding portion 113b covers the first conductive section L2, and the second opening 113c reveals the second conductive section L3. In this embodiment, the solder mask 113 has a second shielding portion 133d. The second opening 113c is located between the first shielding portion 113b and the second shielding portion 133d. The second shielding portion 133d covers the third conductive section L5 and reveals the outer lead L4. The outer lead L4 is used to be electrically connected to an external electronic component (not shown in the figure, such as a panel, etc.).

請參閱第1及2圖,該晶片120設置於該第一開口113a且電性連接該內引腳L1,較佳地,一填充材140填充於該晶片120與該基板110之間,該散熱片130具有一散熱層131及一絕緣黏膠層132,該散熱層131以該絕緣黏膠層132貼附於該第二開口113c顯露的該第二導接段L3,以使該晶片120運作時所產生的熱,能由該內引腳L1、該第一導接段L2及該第二導接段L3傳導至貼附於該第二導接段L3的該散熱片130,以增加該散熱片130接觸發熱源(如該晶片120及該線路層112)的面積,進而增加該封裝構造100的導熱效能,在本實施例中,該散熱層131以該絕緣黏膠層132貼附於該第一遮蔽部113b及該第二遮蔽部133d,以避免位在該第二開口113c二側的該第一遮蔽部113b的邊緣或該第二遮蔽部133d的邊緣翹起,而造成該防焊層113剝離該載體111或該線路層112。Referring to FIGS. 1 and 2 , the chip 120 is disposed in the first opening 113a and electrically connected to the inner lead L1. Preferably, a filler 140 is filled between the chip 120 and the substrate 110. The heat sink 130 has a heat sink layer 131 and an insulating adhesive layer 132. The heat sink layer 131 is attached to the second conductive section L3 exposed by the second opening 113c by the insulating adhesive layer 132, so that the heat generated by the chip 120 during operation can be transferred from the inner lead L1, the first conductive section L2 and the second conductive section L3 to the conductive section L3 attached to the second conductive section L3. The heat sink 130 of the connecting section L3 is used to increase the area of the heat sink 130 contacting the heat source (such as the chip 120 and the circuit layer 112), thereby increasing the thermal conductivity of the packaging structure 100. In this embodiment, the heat sink 131 is attached to the first shielding portion 113b and the second shielding portion 133d by the insulating adhesive layer 132 to prevent the edges of the first shielding portion 113b or the second shielding portion 133d located on both sides of the second opening 113c from rising, thereby causing the solder mask 113 to peel off the carrier 111 or the circuit layer 112.

請參閱第1、3及4圖,該第二開口113c的面積小於覆蓋該第二開口113c的該散熱片130的面積,使該散熱片130能全覆蓋該第二開口113c,且由於該散熱層131以該絕緣黏膠層132貼附於該第一遮蔽部113b及該第二遮蔽部133d,因此可避免水氣進入到該第二開口113c中,請參閱第1、3及4圖,其差異在於該第二開口113c的開口面積及形狀,其可依據散熱需求而改變,該第二開口113c的形狀可選自於矩形、三角形、梯形等形狀。Please refer to Figures 1, 3 and 4. The area of the second opening 113c is smaller than the area of the heat sink 130 covering the second opening 113c, so that the heat sink 130 can fully cover the second opening 113c. Since the heat dissipation layer 131 is attached to the first shielding portion 113b and the second shielding portion 133d by the insulating adhesive layer 132, moisture can be prevented from entering the second opening 113c. Please refer to Figures 1, 3 and 4. The difference lies in the opening area and shape of the second opening 113c, which can be changed according to the heat dissipation requirements. The shape of the second opening 113c can be selected from rectangles, triangles, trapezoids and other shapes.

請參閱第1及2圖,在本實施例中,沿著一軸向Y,該第一導接段L2至該散熱層131之間具有一第一厚度D1,該第二導接段L3至該散熱層131之間具有一第二厚度D2,該第二厚度D2小於該第一厚度D1,當該封裝構造100被運用於曲面電子產品(如面板等)時,藉由該第二厚度D2小於該第一厚度D1可增加該封裝構造100的可撓度,以降低發生在該晶片120與該內引腳L1之間的剪應力,以避免該晶片120脫離該內引腳L1而發生斷路。Please refer to Figures 1 and 2. In this embodiment, along an axial direction Y, there is a first thickness D1 between the first conductive segment L2 and the heat dissipation layer 131, and there is a second thickness D2 between the second conductive segment L3 and the heat dissipation layer 131. The second thickness D2 is less than the first thickness D1. When the packaging structure 100 is used in curved electronic products (such as panels, etc.), the flexibility of the packaging structure 100 can be increased by the second thickness D2 being less than the first thickness D1, so as to reduce the shear stress between the chip 120 and the inner pin L1, so as to prevent the chip 120 from detaching from the inner pin L1 and causing a short circuit.

請參閱第1及2圖,在本實施例中,該散熱層131以該絕緣黏膠層132貼附於該晶片120及該填充材140的顯露表面,或者,在不同的實施例中,該散熱層131直接接觸該晶片120的顯露表面。Please refer to FIGS. 1 and 2 . In this embodiment, the heat dissipation layer 131 is attached to the exposed surface of the chip 120 and the filling material 140 by the insulating adhesive layer 132 . Alternatively, in different embodiments, the heat dissipation layer 131 directly contacts the exposed surface of the chip 120 .

本創作之保護範圍,當視後附之申請專利範圍所界定者為準,任何熟知此項技藝者,在不脫離本創作之精神和範圍內所作之任何變化與修改,均屬於本創作之保護範圍。The scope of protection of this creation shall be determined by the scope of the patent application attached hereto. Any changes and modifications made by anyone familiar with this technology without departing from the spirit and scope of this creation shall fall within the scope of protection of this creation.

100:封裝構造 110:基板 111:載體 112:線路層 113:防焊層 113a:第一開口 113b:第一遮蔽部 113c:第二開口 133d:第二遮蔽部 120:晶片 130:散熱片 131:散熱層 132:絕緣黏膠層 140:填充材 D1:第一厚度 D2:第二厚度 L:線路 L1:內引腳 L2:第一導接段 L3:第二導接段 L4:外引腳 L5:第三導接段 Y:軸向 100: packaging structure 110: substrate 111: carrier 112: circuit layer 113: solder mask 113a: first opening 113b: first shielding part 113c: second opening 133d: second shielding part 120: chip 130: heat sink 131: heat sink layer 132: insulating adhesive layer 140: filling material D1: first thickness D2: second thickness L: circuit L1: inner lead L2: first conductive section L3: second conductive section L4: outer lead L5: third conductive section Y: axial direction

第1圖:本創作的封裝構造的俯視示意圖。 第2圖:本創作的封裝構造的剖視圖。 第3圖:本創作另一實施例的封裝構造的俯視示意圖。 第4圖:本創作又一實施例的封裝構造的俯視示意圖。 Figure 1: A schematic top view of the packaging structure of the present invention. Figure 2: A cross-sectional view of the packaging structure of the present invention. Figure 3: A schematic top view of the packaging structure of another embodiment of the present invention. Figure 4: A schematic top view of the packaging structure of another embodiment of the present invention.

100:封裝構造 100:Packaging structure

110:基板 110: Substrate

111:載體 111: Carrier

113:防焊層 113: Solder mask

113a:第一開口 113a: First opening

113b:第一遮蔽部 113b: First shielding part

113c:第二開口 113c: Second opening

133d:第二遮蔽部 133d: Second shielding part

120:晶片 120: Chip

130:散熱片 130: Heat sink

131:散熱層 131: Heat dissipation layer

132:絕緣黏膠層 132: Insulating adhesive layer

140:填充材 140: Filling material

D1:第一厚度 D1: First thickness

D2:第二厚度 D2: Second thickness

L1:內引腳 L1: Inner pin

L2:第一導接段 L2: First conductor section

L3:第二導接段 L3: Second conducting section

L4:外引腳 L4: external pins

L5:第三導接段 L5: The third conducting section

Y:軸向 Y: Axis

Claims (12)

一種封裝構造,包含: 一基板,具有一載體、一線路層及一防焊層,該線路層設置於該載體,該線路層包含複數個線路,各該線路具一內引腳、一第一導接段、一第二導接段及一外引腳,該第一導接段位於該內引腳與該第二導接段之間,該第二導接段位於該第一導接段與該外引腳之間,該防焊層覆蓋該線路層,該防焊層具有一第一開口、一第一遮蔽部及至少一第二開口,該第一遮蔽部位於該第一開口及該第二開口之間,該第一開口顯露出該內引腳,該第一遮蔽部覆蓋該第一導接段,該第二開口顯露出該第二導接段; 一晶片,設置於該基板,並電性連接該內引腳;及 一散熱片,覆蓋該基板及該晶片,該散熱片具有一散熱層及一絕緣黏膠層,該散熱層以該絕緣黏膠層貼附於該第二開口顯露的該第二導接段。 A packaging structure, comprising: A substrate, having a carrier, a circuit layer and a solder mask, the circuit layer being arranged on the carrier, the circuit layer comprising a plurality of circuits, each of the circuits having an inner pin, a first conductive section, a second conductive section and an outer pin, the first conductive section being located between the inner pin and the second conductive section, the second conductive section being located between the first conductive section and the outer pin, the solder mask covering the circuit layer, the solder mask having a first opening, a first shielding portion and at least one second opening, the first shielding portion being located between the first opening and the second opening, the first opening revealing the inner pin, the first shielding portion covering the first conductive section, and the second opening revealing the second conductive section; A chip is disposed on the substrate and electrically connected to the inner pin; and a heat sink covers the substrate and the chip, the heat sink has a heat sink layer and an insulating adhesive layer, and the heat sink layer is attached to the second conductive section exposed by the second opening with the insulating adhesive layer. 如請求項1之封裝構造,其中該第二開口的面積小於覆蓋該第二開口的該散熱片的面積,使該散熱片全覆蓋該第二開口。In the packaging structure of claim 1, the area of the second opening is smaller than the area of the heat sink covering the second opening, so that the heat sink completely covers the second opening. 如請求項1之封裝構造,其中各該線路另具一第三導接段,該第三導接段位於該第二導接段與該外引腳之間,該防焊層具有一第二遮蔽部,該第二開口位於該第一遮蔽部與該第二遮蔽部之間,該第二遮蔽部覆蓋該第三導接段,並顯露出該外引腳。As in the packaging structure of claim 1, each of the circuits has a third conductive segment, the third conductive segment is located between the second conductive segment and the external lead, the solder mask has a second shielding portion, the second opening is located between the first shielding portion and the second shielding portion, the second shielding portion covers the third conductive segment and exposes the external lead. 如請求項3之封裝構造,其中該散熱層以該絕緣黏膠層貼附於該第一遮蔽部及該第二遮蔽部。As in the packaging structure of claim 3, the heat dissipation layer is attached to the first shielding portion and the second shielding portion by the insulating adhesive layer. 如請求項1至4中任一項之封裝構造,其中該第一導接段至該散熱層之間具有一第一厚度,該第二導接段至該散熱層之間具有一第二厚度,該第二厚度小於該第一厚度。In the packaging structure of any one of claims 1 to 4, there is a first thickness between the first conductive section and the heat dissipation layer, and there is a second thickness between the second conductive section and the heat dissipation layer, and the second thickness is smaller than the first thickness. 如請求項5之封裝構造,其中該第二開口環繞該第一開口及該第一遮蔽部。A packaging structure as claimed in claim 5, wherein the second opening surrounds the first opening and the first shielding portion. 如請求項6之封裝構造,其中該第一遮蔽部環繞該第一開口。A packaging structure as claimed in claim 6, wherein the first shielding portion surrounds the first opening. 一種封裝構造的基板,包含: 一載體; 一線路層,設置於該載體,該線路層包含複數個線路,各該線路具一內引腳、一第一導接段、一第二導接段及一外引腳,該第一導接段位於該內引腳與該第二導接段之間,該第二導接段位於該第一導接段與該外引腳之間;及 一防焊層,覆蓋該線路層,該防焊層具有一第一開口、一第一遮蔽部及至少一第二開口,該第一遮蔽部位於該第一開口及該第二開口之間,該第一開口顯露出該內引腳,以供電性連接一晶片,該第一遮蔽部覆蓋該第一導接段,該第二開口顯露出該第二導接段,以供一散熱片的一散熱層以一絕緣黏膠層貼附於該第二開口顯露的該第二導接段。 A substrate of a package structure, comprising: a carrier; a circuit layer, disposed on the carrier, the circuit layer comprising a plurality of circuits, each of the circuits having an inner pin, a first conductive section, a second conductive section and an outer pin, the first conductive section being located between the inner pin and the second conductive section, the second conductive section being located between the first conductive section and the outer pin; and A solder mask covers the circuit layer. The solder mask has a first opening, a first shielding portion and at least one second opening. The first shielding portion is between the first opening and the second opening. The first opening exposes the inner pin for electrically connecting a chip. The first shielding portion covers the first conductive section. The second opening exposes the second conductive section for a heat sink to be attached to the second conductive section exposed by the second opening with an insulating adhesive layer. 如請求項8之封裝構造的基板,其中各該線路具一第三導接段,該第三導接段位於該第二導接段與該外引腳之間,該防焊層具有一第二遮蔽部,該第二開口位於該第一遮蔽部與該第二遮蔽部之間,該第二遮蔽部覆蓋該第三導接段,並顯露出該外引腳。A substrate with a packaging structure as in claim 8, wherein each of the circuits has a third conductive segment, the third conductive segment is located between the second conductive segment and the external lead, the solder mask has a second shielding portion, the second opening is located between the first shielding portion and the second shielding portion, the second shielding portion covers the third conductive segment and exposes the external lead. 如請求項9之封裝構造的基板,其中該第一遮蔽部及該第二遮蔽部用以供該散熱層以該絕緣黏膠層貼附。A substrate with a packaging structure as claimed in claim 9, wherein the first shielding portion and the second shielding portion are used for the heat dissipation layer to be attached with the insulating adhesive layer. 如請求項8至10中任一項之封裝構造的基板,其中該第二開口環繞該第一開口及該第一遮蔽部。A substrate for a package structure as in any one of claims 8 to 10, wherein the second opening surrounds the first opening and the first shielding portion. 如請求項11之封裝構造的基板,其中該第一遮蔽部環繞該第一開口。A substrate of a packaging structure as claimed in claim 11, wherein the first shielding portion surrounds the first opening.
TW113209249U 2024-08-27 2024-08-27 Chip package and substrate thereof TWM663864U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW113209249U TWM663864U (en) 2024-08-27 2024-08-27 Chip package and substrate thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW113209249U TWM663864U (en) 2024-08-27 2024-08-27 Chip package and substrate thereof

Publications (1)

Publication Number Publication Date
TWM663864U true TWM663864U (en) 2024-12-01

Family

ID=94735986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113209249U TWM663864U (en) 2024-08-27 2024-08-27 Chip package and substrate thereof

Country Status (1)

Country Link
TW (1) TWM663864U (en)

Similar Documents

Publication Publication Date Title
US7825498B2 (en) Semiconductor device
TWI714985B (en) Film package and package module including the same
TWI551198B (en) Printed circuit board structure with heat dissipation function
TWI590392B (en) Electronic package and its manufacturing method
JP2974552B2 (en) Semiconductor device
JP2001520460A (en) Method and structure for improving heat dissipation characteristics of package for microelectronic device
US20110156226A1 (en) Interposer and semiconductor device
JP2004071670A (en) IC package, connection structure, and electronic device
CN103094232A (en) Chip packaging structure
US8102046B2 (en) Semiconductor device and method of manufacturing the same
US12237275B2 (en) Semiconductor devices having supportive plating structures
TWM663864U (en) Chip package and substrate thereof
US20080048304A1 (en) Heat slug for package structure
TWI908283B (en) Chip package and substrate thereof
TW201644328A (en) Chip package structure
KR100474193B1 (en) BG Package and Manufacturing Method
JP3344362B2 (en) Film carrier type semiconductor device
US20210398889A1 (en) Semiconductor device
TWI769799B (en) Chip on film package structure
TW202046466A (en) Heat dissipation chip-on-film package
KR100421777B1 (en) semiconductor package
TWI728438B (en) Semiconductor device
KR100708051B1 (en) Semiconductor Package
JP2025111966A (en) Semiconductor Module
JPH02271544A (en) Wiring substrate and semiconductor device using it