TWM663040U - Ion beam deceleration device and ion implantation system comprising the same - Google Patents

Abstract

The present disclosure provides an ion beam deceleration device, comprising: a housing, comprising a first ion beam inlet at a first position, a first ion beam outlet at a second position, and a second ion beam outlet at a third position, the first position being different from the second position, and the second position being different from the third position; a deceleration assembly within the housing and adjacent to the first position; and a deflection assembly within the the housing and adjacent to the deceleration assembly.

Description

Ion beam deceleration device and ion implantation system containing the same

This disclosure relates to the field of semiconductors.

Ion implantation is a process in which ions of an element are accelerated into a solid target, thereby changing the physical, chemical or electrical properties of the solid target. Ion implantation is widely used in semiconductor device manufacturing, metal finishing and materials science research.

The following presents a simplified summary of the basic features of the present disclosure in order to provide a basic understanding of some aspects of the present disclosure.

The present disclosure provides an ion beam deceleration device, comprising: a housing, the housing comprising a first ion beam inlet located at a first position, a first ion beam outlet located at a second position, and a second ion beam outlet located at a third position, the first position being different from the second position, and the second position being different from the third position; a deceleration assembly located inside the housing and adjacent to the first position; and a deflection assembly located inside the housing and adjacent to the deceleration assembly.

The present disclosure further provides an ion beam deceleration device, comprising: a housing, the housing comprising a first ion beam inlet and a first ion beam outlet; a motor, coupled to the first ion beam outlet to position the first ion beam outlet at a first position or a second position different from the first position; a deceleration assembly, located inside the housing and downstream of the first ion beam inlet in the ion beam flow direction; and a deflection assembly, located inside the housing and upstream of the first ion beam outlet in the ion beam flow direction.

An ion implantation system includes: an ion beam generating device; an ion beam deceleration device as described herein, which is connected to the ion beam generating device in an ion beam flow manner; and a substrate supporting device, which is connected to the ion beam deceleration device in an ion beam flow manner.

10: Ion implantation system

20: Ion implantation system

100: Ion beam generator

102: Ion source

104: Ion beam

104a: Ion beam scanning line

104b: Ion beam scanning line

104m: Initial energy ion beam

104n: lower energy ion beam

106:Analyzer magnet

108: Quality resolution gap

110: Collimator

112: Substrate carrier

112b: substrate carrier

112b': Operation position

112b":Operation position

113: Rotation axis

114: Substrate

116: Deceleration device

116a: deceleration device

116b: deceleration device

116c: deceleration device

116d: deceleration device

116e: deceleration device

116f: deceleration device

116g: deceleration device

117: Shell

117b: Shell

117d: Shell

201: Speed reduction assembly

201a: Reduction assembly

201c: Reduction assembly

203: Deflection assembly

203b: Deflection assembly

203f: Deflection assembly

204:Electrode

205:Electrode

210: Ion beam entrance

212: Ion beam outlet

214: Ion beam outlet

214': Position

220: Ion beam entrance

220': Position

222: Ion beam outlet

222': Position

224: Ion beam outlet

224': Position

232: Power supply

234: Power supply

240: Motor

250:Electrode

252:Electrode

254: Ion beam entrance

254': Position

256: Ion beam outlet

256': Position

257: Ion beam outlet

257': Position

1041: Charged ion species

1042: Neutral species

h1: Depth

h2: Depth

The present disclosure is described in detail with reference to the following figures: FIG. 1 shows an ion implantation system 10 according to some embodiments of the present disclosure.

Figure 2a shows a top view of the substrate 114 along the z-axis direction.

FIG2b shows a cross-sectional view of the substrate 114 along the line A-A' in FIG2a.

FIG3 shows an ion implantation system 20 according to some embodiments of the present disclosure.

FIG. 4 shows a deceleration device 116a according to some embodiments of the present disclosure.

Figure 5a shows a top view of the substrate 114 along the z-axis direction.

FIG5b shows a cross-sectional view of the substrate 114 in FIG5a along the line B-B'.

FIG. 6 shows a deceleration device 116b according to some embodiments of the present disclosure.

FIG. 7 shows a deceleration device 116c according to some embodiments of the present disclosure.

Figures 8a and 8b show a deceleration device 116d according to some embodiments of the present disclosure.

Figures 9a and 9b show a deceleration device 116e according to some embodiments of the present disclosure.

FIG. 10 shows a deceleration device 116f according to some embodiments of the present disclosure.

FIG. 11 shows a deceleration device 116g according to some embodiments of the present disclosure.

For clarity and simplicity of the figures, the same element symbols in different figures refer to the same element unless otherwise stated. In addition, descriptions and details of well-known steps and elements may be omitted to simplify the description. The words "approximately", "substantially" or "substantially" as used herein mean that the value of the element has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there are always some slight differences that make the value or position not exactly consistent with the stated value or position. It is well known in the art that deviations of up to at least ten percent (10%) (and even up to twenty percent (20%) for some elements) are reasonable deviations from the ideal goal of accurate description. The terms "first", "second", "third", etc. in the scope of the application and/or specific embodiments (as used in the part of the component name) are used to distinguish similar components and do not necessarily describe the order in time, spatial ranking or any other way. It should be understood that such terms can be interchanged in appropriate circumstances, and the embodiments described herein can operate in other orders than the order described or exemplified herein. The phrase "some embodiments" means that the specific features, structures, or characteristics described in conjunction with the embodiments are included in at least one embodiment of the present disclosure. Therefore, the phrase "in some embodiments" appearing in different places throughout the specification does not necessarily refer to the same embodiment, but in some cases, it may refer to the same embodiment. In addition, a person of ordinary skill in the art understands that in one or more embodiments, specific features, structures, or characteristics can be combined in any appropriate manner.

The following disclosure provides various embodiments or implementations for implementing different features of the present disclosure. Specific embodiments of components and arrangements are described below. Of course, the descriptions are embodiments only and are not intended to be limiting. In the present disclosure, in the following description, a description of a first feature formed on or above a second feature may include embodiments formed by direct contact between the first feature and the second feature, and may additionally include embodiments in which additional features may be formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact. In addition, in the present disclosure, component symbols and/or letters may be repeated in the embodiments. This repetition is for the purpose of simplicity and clarity and does not indicate a relationship between the various embodiments and/or configurations described.

The following describes the implementation of the present disclosure in detail. However, it should be understood that the multiple applicable concepts provided by the present disclosure can be implemented in multiple specific environments. The specific implementation described is merely illustrative and does not limit the scope of the present disclosure.

FIG. 1 shows an ion implantation system 10 according to some embodiments of the present disclosure. The ion implantation system 10 includes an ion beam generating device 100 and a substrate supporting device 112. The substrate supporting device 112 can be connected to the ion beam generating device 100 in a manner that an ion beam flows.

The ion beam generating device 100 may include an ion source 102, an analyzer magnet 106, a mass resolving slit 108, and a collimator 110.

The ion source 102 may be used to generate an ion beam 104. For simplicity, the ion beam 104 is only depicted as the central ray trajectory of the ion beam. The ion source 102 may be an indirectly heated cathode (IHC) ion source, a radio frequency (RF) ion source, a microwave ion source, or other ion sources. The ion beam 104 may be provided as a static ribbon beam, a spot beam, or a scanned spot beam.

The analyzer magnet 106 can change the trajectory of ions extracted from the ion source 102. The analyzer magnet 106 can be connected to the ion source 102 in an ion beam flow manner. The analyzer magnet 106 can be disposed downstream of the ion source 102.

The mass resolving slit 108 can be used to filter out ions with undesirable mass. The mass resolving slit 108 can be connected to the analyzer magnet 106 in a manner that allows the ion beam to flow. The mass resolving slit 108 can be disposed downstream of the analyzer magnet 106.

The collimator 110 may be a magnetic collimator or an electrostatic collimator for at least producing a collimated ion beam to be conducted to the substrate support device 112. The collimator 110 may be connected to the mass resolving slit 108 in a manner that allows the ion beam to flow. The collimator 110 may be disposed downstream of the mass resolving slit 108.

The substrate support device 112 can be used to support the substrate 114. The substrate support device 112 can be connected to the collimator 110 in a manner that the ion beam flows. The substrate support device 112 can be disposed downstream of the collimator 110.

The analyzer magnet 106 can be disposed between the ion source 102 and the mass resolving slit 108. The mass resolving slit 108 can be disposed between the analyzer magnet 106 and the collimator 110. The collimator 110 can be disposed between the mass resolving slit 108 and the substrate holder 112. Thus, the ion implantation system 10 can utilize multiple elements to direct the ion beam 104 from the ion source 102 to the substrate 114.

Herein, the direction substantially parallel to the surface of the substrate support device 112 can be defined as the x-axis direction or the y-axis direction; the direction substantially parallel to the direction in which the ion beam 104 is incident on the substrate support device 112 can be defined as the z-axis direction. The substrate support device 112 can be moved substantially along the x-axis direction. The substrate support device 112 can be moved substantially along the y-axis direction. The substrate support device 112 can be moved substantially along the z-axis direction.

FIG2a shows a top view of the substrate 114 along the z-axis direction. The ion beam generating device 100 can generate a corresponding ion beam scanning line 104a on the surface of the substrate 114. The arrow direction in FIG2a shows that the substrate supporting device 112 can move along the x-axis direction so that the ion beam scanning line 104a irradiates different positions of the substrate 114.

In order to properly treat the substrate 114, the ion beam 104 can be accelerated or decelerated to a target ion energy and can have a trajectory of the ion beam 104 and a shape of the ion beam scan line 104a, for example, which are manipulated by various beamline elements to produce a set of target characteristics of the ion beam 104 at the substrate 114. For example, the ion beam 104 can be incident on the substrate 114 in a direction generally perpendicular to the surface of the substrate 114. The ion beam 104 can be incident on the substrate 114 in a direction generally along the z-axis. The ion beam scan line 104a can extend generally along the y-axis.

10KeV)、高電流束(

1mA)的離子束掃描線104a。 The ion beam 104 can be delivered at a relatively high energy by ion extraction, mass analysis and other beamline components and decelerated to a target energy before incident on the substrate 114, thereby obtaining a low energy (

10KeV), high current beam (

1mA) of the ion beam scanning line 104a.

FIG2b shows a cross-sectional view of the substrate 114 along the line A-A' in FIG2a. FIG2b also shows the possible distribution of ions on the x-z plane of the substrate 114 after irradiation by the ion beam scanning line 104a, which may include the distribution of charged ion species 1041 at a depth h1 and the distribution of neutral species 1042 at a depth h2, where h2>h1.

The presence of neutral species 1042 may cause energy contamination. Energy contamination can be attributed to the high-energy neutral species 1042 present in the ion beam 104. The neutral species 1042 is the result of charge exchange between the ion beam 104 and the residual gas molecules in the beam line. As shown in FIG. 2b, the charged ion species 1041 is distributed at a depth h1 in the substrate 114. The charged ion species 1041 is the result of the ion beam 104 being decelerated and hitting the substrate 114. However, before or during deceleration, since the neutral species 1042 fails to decelerate successfully, it may be incident on the substrate 114 at a higher energy than expected and continue to propagate to a depth greater than h1 (e.g., depth h2) to cause energy contamination. Therefore, the neutral species 1042 may exist at a deeper depth h2 within the substrate 114.

The presence of neutral species 1042 at a deeper depth h2 within the substrate 114 indicates energy contamination caused by ion beam deceleration. This energy contamination may affect the accuracy of ion implantation and the properties of the substrate 114.

FIG. 3 shows an ion implantation system 20 according to some embodiments of the present disclosure. The ion implantation system 20 is substantially the same as the ion implantation system 20 shown in FIG. 1 , except that the ion implantation system 20 further includes a deceleration device 116.

The decelerator 116 can be connected to the ion beam generator 100 in an ion beam flow manner. The decelerator 116 can be disposed downstream of the ion beam generator 100. The decelerator 116 can be disposed between the ion beam generator 100 and the substrate support device 112. The decelerator 116 can be connected to the collimator 110 in an ion beam flow manner. The decelerator 116 can be disposed downstream of the collimator 110. The decelerator 116 can be disposed between the collimator 110 and the substrate support device 112.

The decelerator 116 can be used to improve energy contamination. The decelerator 116 can include an element that generates an electric field. The decelerator 116 can include an element that generates a magnetic field. The decelerator 116 blocks high-energy neutral species 1042 generated before and during the deceleration of the ion beam 104 from entering the substrate 114. Therefore, the ion implantation system 20 including the decelerator 116 can improve the current performance of the ion beam 104 at low energy and facilitate easy control of the implantation of the ion beam 104, so that the incident energy of the ion beam 104 does not affect the energy contamination level in the system.

FIG. 4 shows a deceleration device 116a according to some embodiments of the present disclosure. The deceleration device 116a can be used as the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 . The deceleration device 116a can include a housing 117 and a deceleration assembly 201 and a deflection assembly 203 located in the housing 117. The deflection assembly 203 can be adjacent to the deceleration assembly 201.

The housing 117 may include an ion beam inlet 220 at a position 220'. The housing 117 may include an ion beam outlet 222 at a position 222'. The position 220' may be different from the position 222'. In the x-axis direction, the position 222' may be separated from the position 220' by a distance. In the y-axis direction, the position 222' may be separated from the position 220' by a distance.

The deceleration assembly 201 may be closer to the position 220' than the deflection assembly 203. The deceleration assembly 201 includes a power supply 232 and a deceleration electrode set (electrode 250 and electrode 252). Electrode 250 may be parallel to electrode 252. Electrode 250 may be electrically connected to the low potential of the power supply 232. Electrode 252 may be electrically connected to the high potential of the power supply 232. Electrode 250 may include an ion beam inlet 254 located at the position 254'. Electrode 252 may include an ion beam outlet 256 located at the position 256'. The position 220' may be located in the direction of the line connecting the position 254' and the position 256'. Position 254' may be located between position 220' and position 256'. The power supply 232 and the deceleration electrode 250 may be used to change the energy of the ion beam 104. The power supply 232 and the electrode 250 and the electrode 252 may reduce the energy of the ion beam 104 from an initial energy ion beam 104m (e.g., 10 keV) to a lower energy ion beam 104n (e.g., 2 keV).

The deflection assembly 203 may be closer to the position 222' than the deceleration assembly 201. The deflection assembly 203 may include a power supply 234 and a deflection electrode set (electrode 204 and electrode 205). The electrode 204 may be electrically connected to a low potential of the power supply 234. The electrode 205 may be electrically connected to a high potential of the power supply 234. The deflection assembly 203 may include an ion beam inlet 210. The deflection assembly 203 may include an ion beam outlet 212. The power supply 234, the deflection electrode 204, and the electrode 205 may deflect the path of the ion beam 104, so that the propagation direction of the ion beam 104 changes when the ion beam 104 enters the substrate 114. The deflection assembly 203 and the deceleration assembly 201 may share a common electrode for changing the direction and energy of the ion beam 104.

The deflection assembly 203 can be used to shield neutral species 1042 contaminants from entering the substrate 114. The electrode 204 can have a curved shape. The electrode 205 can have a curved shape. The electrode 205 can shield the ion beam 104 in a direction substantially along which the ion beam 104 enters the ion beam inlet 220. The ion beam 104 can be deflected by an electric field generated by the deflection assembly 203. The ion beam 104 can be deflected by a magnetic field generated by the deflection assembly 203.

The lower energy ion beam 104n may include charged ion species 1041 and neutral species 1042. The neutral species 1042 may cause energy contamination at the substrate 114. Energy contamination is because the neutral species 1042, which do not carry a net charge, cannot be decelerated by the deceleration assembly 201, and therefore, the neutral species 1042 may have a higher energy than the charged ion species 1041. For example, the charged ion species 1041 carried by the lower energy ion beam 104n for ion implantation may have an energy of 2 keV, while the neutral species 1042 may carry an energy of 10 keV. Thus, by providing a curved shape to the deflection assembly 203, the deflection assembly 203 can capture the neutral species 1042 because the trajectory of the neutral species 1042 is not altered by the field generated by the deflection assembly 203, thereby enabling the neutral species 1042 to travel in a straight trajectory toward the wall of the deflection assembly 203 (e.g., the electrode 205).

FIG5a shows a top view of the substrate 114 along the z-axis direction. When the substrate support device 112 moves along the x-axis direction, the ion beam generating device 100 can generate a corresponding ion beam scanning line 104b on the surface of the substrate 114 after being equipped with the deceleration device 116. The ion beam scanning line 104b can extend along the x-axis direction. The ion beam scanning line 104b can extend along the y-axis direction. FIG5b shows a cross-sectional view of the substrate 114 along the BB' line in FIG5a and the angle distribution of the charged ion species 1041 relative to the surface of the substrate 114 when the ion beam scanning line 104b scans.

Returning to FIG. 5a, ion beam scan line 104b shows that the field generated by the deflection assembly 203 may cause difficulties in maintaining the beam shape required for ion beam scan line 104b, resulting in problems such as asymmetry, non-uniform beam flux distribution, and non-parallel incident beam lines. In this article, the above phenomena may be collectively referred to as beam distortion. The non-uniform beam flux distribution of ion beam scan line 104b may be attributed to the non-uniform ion acceleration caused by the field generated by the deflection assembly 203. For example, ion beam scan line 104b may have a higher beam flux at the center of substrate 114 and a lower beam flux at the edge of the substrate.

Returning to Figures 5a and 5b, due to the uneven field distribution generated by the deflection assembly 203, there may be an asymmetry in the beam shape of the ion beam scan line 104b. This uneven distribution may cause part of the beam of the charged ion species 1041 to deviate from its predetermined path, thereby generating a non-parallel incident beam line. For example, at the center of the substrate 114, the incident ion species 1041 may be almost perpendicular to the substrate surface (along the z-axis direction). However, at the edge, the incident ion beam may occur in a non-perpendicular (deviation from the z-axis direction) manner.

FIG5b also shows the possible distribution of the charged ion species 1041 on the x-z plane of the substrate 114 after being scanned by the ion beam scanning line 104b. The non-parallel beam and non-uniform beam flux of the ion beam scanning line 104b cause the non-uniform distribution of the charged ion species 1041 in the substrate 114 (along the x-axis direction or along the z-axis direction), and even form clusters of the charged ion species 1041.

As can be seen from the above, although the application of the deceleration device 116 can avoid energy contamination, it may also introduce complexity in the control of the beam shape of the ion beam 104. Therefore, there is an ion beam generating device that includes the need to choose to turn off or on the ion beam deceleration device 116 according to the high or low demand for target implantation energy.

FIG. 6 shows a deceleration device 116b according to some embodiments of the present disclosure. The deceleration device 116b can be used as the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 . The deceleration device 116b is substantially the same as the deceleration device 116a shown in FIG. 4 , and the difference between them is that the housing 117 in the deceleration device 116a is replaced by the housing 117b; and the deflection assembly 203 in the deceleration device 116a is replaced by the deflection assembly 203b.

The housing 117b is substantially the same as the housing 117 shown in FIG. 4 , with the difference that the housing 117b may additionally include an ion beam outlet 224 at a position 224′. The position 224′ may be different from the position 220′. The position 224′ may be different from the position 222′. In the x-axis direction, the position 224′ may be separated from the position 220′ by a distance. In the x-axis direction, the position 224′ may be separated from the position 222′ by a distance. In the y-axis direction, the position 224′ may be separated from the position 220′ by a distance. In the y-axis direction, the position 224′ may be separated from the position 222′ by a distance. The deflection assembly 203b may be proximate to the position 224′ relative to the deceleration assembly 201. Position 224' may be located in the direction of the line connecting position 254' and position 256'. Position 256' may be located between position 254' and position 224'.

The deflection assembly 203b is substantially the same as the deflection assembly 203 shown in FIG. 4, except that the ion beam 104 may not be shielded by the deflection assembly 203b in a direction substantially along which the ion beam 104 enters the ion beam inlet 220. The ion beam 104 may not be shielded by the electrode 205 in a direction substantially along which the ion beam 104 enters the ion beam inlet 220. The ion beam 104 may not be shielded by the electrode 204 in a direction substantially along which the ion beam 104 enters the ion beam inlet 220. The direction of the line connecting the position 220' and the position 224' may not be shielded by the deflection assembly 203b. The direction of the line connecting the position 220' and the position 224' may not be shielded by the electrode 205. The connection direction between position 220' and position 224' may not be shielded by electrode 204. Electrode 204 may have a first curvature, and electrode 205 may have a second curvature, and the first curvature may be greater than the second curvature.

When the deceleration assembly 201 is turned off, the bias voltage of the power supply 232 can be 0, and the lower energy ion beam 104n is not formed, so there is no energy pollution. At this time, the deflection assembly 203b can also be turned off, and the bias voltage of the power supply 234 can be 0. The initial energy ion beam 104m can be incident on the ion beam outlet 224 according to the original incident direction. The initial energy ion beam 104m can be incident on the substrate 114 through the ion beam outlet 224 according to the original incident direction.

When the deceleration assembly 201 is turned on, the bias voltage of the power supply 232 can be greater than 0, forming a lower energy ion beam 104n. At this time, the deflection assembly 203b can be turned on to select the charged ion species 1041. The bias voltage of the power supply 234 can be greater than 0. The path of the lower energy ion beam 104n can be deflected by the deflection assembly 203b and then incident on the ion beam outlet 222. The lower energy ion beam 104n can be incident on the substrate 114 through the ion beam outlet 222.

To achieve the above purpose, when the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 is replaced with the deceleration device 116a shown in FIG. 6, the substrate support device 112 in the ion implantation system 20 can be replaced with the substrate support device 112b shown in FIG. 6. At this time, the ion implantation system 20 can be applied to ions with energies up to approximately 500 keV. The ion implantation system 20 can be applied to ions with energies lower than 50 keV.

The substrate support device 112b may include a rotation axis 113. The rotation axis 113 may be substantially parallel to the emission direction 104n of the outlet 222 and the bisector of the emission direction 104m of the ion beam outlet 224. The substrate support device 112b may include a selective compliance assembly robot arm (SCARA). The substrate support device 112b may be configured so that the emission direction of the initial energy ion beam 104m of the ion beam outlet 224 is substantially perpendicular to the surface of the substrate 114 (operating position 112b' shown in FIG. 6). The substrate support device 112b can be configured so that the emission direction of the lower energy ion beam 104n from the ion beam outlet 222 is substantially perpendicular to the surface of the substrate 114 (operating position 112b" shown in FIG. 6). Therefore, the operating rules of the ion implantation system can be shown in Table 1:

For the original ion beam flow direction of the initial energy ion beam 104m of the deceleration device 116b, the ion beam inlet 254 can be located downstream of the ion beam inlet 220. The ion beam outlet 256 can be located downstream of the ion beam inlet 254. The ion beam inlet 210 can be located downstream of the ion beam outlet 256. The ion beam outlet 224 can be located downstream of the ion beam inlet 210. The substrate support device 112b at the operating position 112b' can be located downstream of the ion beam outlet 224. Therefore, when the initial energy ion beam 104m without deceleration is used, beam distortion can be avoided.

For the ion beam flow direction when the initial energy ion beam 104m of the deceleration device 116b forms the lower energy ion beam 104n, the ion beam inlet 254 may be located downstream of the ion beam inlet 220. The ion beam outlet 256 may be located downstream of the ion beam inlet 254. The ion beam inlet 210 may be located downstream of the ion beam outlet 256. The ion beam outlet 212 may be located downstream of the ion beam inlet 210. The ion beam outlet 222 may be located downstream of the ion beam outlet 212. The substrate carrier 112b in the operating position 112b" may be located downstream of the ion beam outlet 222. Therefore, energy contamination may be avoided when using an undecelerated lower energy ion beam 104n.

FIG. 7 shows a deceleration device 116c according to some embodiments of the present disclosure. The deceleration device 116c can be used as the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 . The deceleration device 116c is substantially the same as the deceleration device 116b shown in FIG. 6 , and the difference between them is that the deceleration assembly 201 in the deceleration device 116b is replaced by the deceleration assembly 201c.

The deceleration assembly 201c is substantially the same as the deceleration assembly 201 shown in FIG. 6 , except that the electrode 252 may further include an ion beam outlet 257 at a position 257′. The position 257′ may be different from the position 256′. The position 257′ may be separated from the position 256′ by a distance substantially along the extension direction of the electrode 252. The position 257′ may be located in the direction of the line connecting the position 220′ and the position 224′. The position 256′ may be located between the position 220′ and the position 224′. The position 257′ may be located between the position 220′ and the position 224′. The ion beam outlet 257 may be closer to the position 224′ than the ion beam outlet 256. The ion beam outlet 256 may be located closer to the position 222' than the ion beam outlet 257. The deceleration assembly 201c may be located closer to the position 220' than the deflection assembly 203. The deceleration assembly 201c may be located closer to the position 222' than the deflection assembly 203. The deceleration assembly 201c may be located closer to the position 224' than the deflection assembly 203. The deflection assembly 203 may be located between the electrode 250 and the electrode 252 substantially along the extension direction of the electrode 252. The ion beam inlet 210 may be located between the electrode 250 and the electrode 252 substantially along the extension direction of the electrode 252. The ion beam outlet 212 may be located between the electrode 250 and the electrode 252. The ion beam inlet 210 may be closer to the electrode 250 than the ion beam outlet 212. The ion beam outlet 212 may be closer to the electrode 252 than the ion beam inlet 210.

When the deceleration assembly 201c is turned off, the bias voltage of the power supply 232 can be 0, and the lower energy ion beam 104n is not formed, so there is no energy pollution. At this time, the deflection assembly 203b can also be turned off, and the bias voltage of the power supply 234 can be 0. The initial energy ion beam 104m can enter the ion beam outlet 257 according to the original incident direction. The initial energy ion beam 104m can enter the ion beam outlet 224 through the ion beam outlet 257 according to the original incident direction. The initial energy ion beam 104m can enter the substrate 114 through the ion beam outlet 224 according to the original incident direction.

When the deceleration assembly 201c is turned on, the bias voltage of the power supply 232 may be greater than 0, the deflection assembly 203b may be turned on to select the charged ion species 1041, and the bias voltage of the power supply 234 may be greater than 0. The path of the initial energy ion beam 104m may be deflected by the deflection assembly 203b and then enter the ion beam outlet 256. The lower energy ion beam 104n may be formed after leaving the ion beam outlet 256. The lower energy ion beam 104n may enter the ion beam outlet 222. The lower energy ion beam 104n may enter the substrate 114 through the ion beam outlet 222. Therefore, the operating rules of the ion implantation system may be shown in Table 2:

For the original ion beam flow direction of the initial energy ion beam 104m of the deceleration device 116c, the ion beam inlet 254 can be located downstream of the ion beam inlet 220. The ion beam inlet 210 can be located downstream of the ion beam inlet 254. The ion beam outlet 212 can be located downstream of the ion beam inlet 210. The ion beam outlet 257 can be located downstream of the ion beam outlet 212. The ion beam outlet 224 can be located downstream of the ion beam outlet 257. The substrate support device 112b at the operating position 112b' can be located downstream of the ion beam outlet 224. Therefore, when the initial energy ion beam 104m without deceleration is used, beam distortion can be avoided.

For the ion beam flow direction when the initial energy ion beam 104m of the decelerator 116c forms the lower energy ion beam 104n, the ion beam inlet 254 may be located downstream of the ion beam inlet 220. The ion beam inlet 210 may be located downstream of the ion beam inlet 254. The ion beam outlet 212 may be located downstream of the ion beam inlet 210. The ion beam outlet 256 may be located downstream of the ion beam outlet 212. The ion beam outlet 222 may be located downstream of the ion beam outlet 256. The substrate carrier 112b in the operating position 112b" can be located downstream of the ion beam outlet 222. Therefore, when the undecelerated lower energy ion beam 104n is used, energy contamination can be avoided. In addition, the configuration of the deceleration assembly 201c and the deflection assembly 203b in the deceleration device 116c can reduce the equipment volume of the deceleration device 116c.

8a and 8b show a deceleration device 116d according to some embodiments of the present disclosure. The deceleration device 116d can be used as the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 . The deceleration device 116d is substantially the same as the deceleration device 116b shown in FIG. 6 , and the difference between them is that the housing 117b in the deceleration device 116b is replaced by the housing 117d.

The housing 117d is substantially the same as the housing 117b shown in FIG. 6 , except that the housing 117d is configured to switch the ion beam outlet 222 between the position 222' (as shown in FIG. 8a ) and the position 224' (as shown in FIG. 8b ). Therefore, the housing 117d may not include the ion beam outlet 224. In some embodiments, the deceleration device 116d may include a motor 240. The motor 240 may be coupled to the ion beam outlet 222 to position the ion beam outlet 222 at the position 222'. The motor 240 may be coupled to the ion beam outlet 222 to position the ion beam outlet 222 at the position 224'.

Returning to FIG. 8a, when the deceleration assembly 201 is turned on, the bias voltage of the power supply 232 can be greater than 0, forming a lower energy ion beam 104n. At this time, the deflection assembly 203b can be turned on to select the charged ion species 1041, and the bias voltage of the power supply 234 can be greater than 0. The path of the lower energy ion beam 104n can be deflected by the deflection assembly 203b and then incident on the ion beam outlet 222 located at the position 222'. The lower energy ion beam 104n can be incident on the substrate 114 through the ion beam outlet 222 located at the position 222'.

Returning to FIG. 8b, when the deceleration assembly 201 is turned off, the bias voltage of the power supply 232 can be 0, and the lower energy ion beam 104n is not formed, and no energy contamination occurs. At this time, the deflection assembly 203b can also be turned off, and the bias voltage of the power supply 234 can be 0, and the initial energy ion beam 104m can be incident on the ion beam outlet 222 located at the position 224' according to the original incident direction. The initial energy ion beam 104m can be incident on the substrate 114 through the ion beam outlet 222 located at the position 224' according to the original incident direction. Therefore, the operating rules of the ion implantation system can be shown in Table 3:

Returning to FIG. 8a, with respect to the ion beam flow direction when the initial energy ion beam 104m of the deceleration device 116d forms the lower energy ion beam 104n, the ion beam inlet 254 may be located downstream of the ion beam inlet 220. The ion beam outlet 256 may be located downstream of the ion beam inlet 254. The ion beam inlet 210 may be located downstream of the ion beam outlet 256. The ion beam outlet 212 may be located downstream of the ion beam inlet 210. The ion beam outlet 222 located at position 222' may be located downstream of the ion beam outlet 212. The substrate carrier 112b in the operating position 112b" may be located downstream of the ion beam outlet 222. Therefore, energy contamination may be avoided when using an undecelerated lower energy ion beam 104n.

Returning to FIG. 8b, for the original ion beam flow direction of the initial energy ion beam 104m of the deceleration device 116d, the ion beam inlet 254 can be located downstream of the ion beam inlet 220. The ion beam outlet 256 can be located downstream of the ion beam inlet 254. The ion beam inlet 210 can be located downstream of the ion beam outlet 256. The ion beam outlet 222 located at the position 224' can be located downstream of the ion beam inlet 210. The substrate support device 112b at the operating position 112b' can be located downstream of the ion beam outlet 222. Therefore, when the initial energy ion beam 104m without deceleration is used, beam distortion can be avoided.

FIGS. 9a and 9b show a deceleration device 116e according to some embodiments of the present disclosure. The deceleration device 116e can be used as the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 . The deceleration device 116e is substantially the same as the deceleration device 116d shown in FIGS. 8a and 8b , except that the deceleration assembly 201 in the deceleration device 116d is replaced with the deceleration assembly 201c shown in FIG. 7 .

Returning to FIG. 9a, when the deceleration assembly 201c is turned on, the bias voltage of the power supply 232 can be greater than 0, the deflection assembly 203b can be turned on to select the charged ion species 1041, and the bias voltage of the power supply 234 can be greater than 0. The path of the initial energy ion beam 104m can be deflected by the deflection assembly 203b and then incident on the ion beam outlet 256. The lower energy ion beam 104n can be formed after leaving the ion beam outlet 256. The lower energy ion beam 104n can be incident on the ion beam outlet 222 located at the position 222'. The lower energy ion beam 104n can be incident on the substrate 114 through the ion beam outlet 222 located at the position 222'.

Returning to FIG. 9b, when the deceleration assembly 201c is turned off, the bias voltage of the power supply 232 can be 0, and the lower energy ion beam 104n is not formed, and no energy contamination occurs. At this time, the deflection assembly 203b can also be turned off, and the bias voltage of the power supply 234 can be 0, and the initial energy ion beam 104m can be incident on the ion beam outlet 257 according to the original incident direction. The initial energy ion beam 104m can be incident on the ion beam outlet 222 located at the position 224' through the ion beam outlet 257 according to the original incident direction. The initial energy ion beam 104m can be incident on the substrate 114 through the ion beam outlet 222 located at the position 224' according to the original incident direction. Therefore, the operating rules of the ion implantation system can be shown in Table 4:

Returning to FIG. 9a, with respect to the ion beam flow direction when the initial energy ion beam 104m of the deceleration device 116e forms the lower energy ion beam 104n, the ion beam inlet 254 may be located downstream of the ion beam inlet 220. The ion beam inlet 210 may be located downstream of the ion beam inlet 254. The ion beam outlet 212 may be located downstream of the ion beam inlet 210. The ion beam outlet 256 may be located downstream of the ion beam outlet 212. The ion beam outlet 222 located at the position 222′ may be located downstream of the ion beam outlet 256. The substrate carrier 112b in the operating position 112b" may be located downstream of the ion beam outlet 222. Therefore, energy contamination may be avoided when using an undecelerated lower energy ion beam 104n.

Returning to FIG. 9b, for the original ion beam flow direction of the initial energy ion beam 104m of the decelerator 116e, the ion beam inlet 254 may be located downstream of the ion beam inlet 220. The ion beam inlet 210 may be located downstream of the ion beam inlet 254. The ion beam outlet 212 may be located downstream of the ion beam inlet 210. The ion beam outlet 257 may be located downstream of the ion beam outlet 212. The ion beam outlet 222 located at the position 224' may be located downstream of the ion beam outlet 257. The substrate support device 112b at the operating position 112b' may be located downstream of the ion beam outlet 222. Therefore, when the initial energy ion beam 104m without deceleration is used, beam distortion may be avoided. In addition, the configuration of the deceleration assembly 201c and the deflection assembly 203b in the deceleration device 116e can reduce the equipment volume of the deceleration device 116e.

FIG. 10 shows a deceleration device 116f according to some embodiments of the present disclosure. The deceleration device 116f can be used as the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 . The deceleration device 116f is substantially the same as the deceleration device 116b shown in FIG. 6 , and the difference between them is that the deflection assembly 203b in the deceleration device 116b is replaced by the deflection assembly 203f.

The deflection assembly 203f is substantially the same as the deflection assembly 203 shown in FIG. 4 , except that the electrode 205 may further include an ion beam outlet 214 at position 214'. Position 214' may be located in the direction of the line connecting position 220' and position 224'. Position 214' may be located between position 220' and position 224'. Ion beam outlet 214 may be closer to position 224' than ion beam outlet 212. Ion beam outlet 212 may be closer to position 222' than ion beam outlet 214.

When the deceleration assembly 201 is turned off, the bias voltage of the power supply 232 can be 0, and the lower energy ion beam 104n is not formed, so there is no energy pollution. At this time, the deflection assembly 203f can also be turned off, and the bias voltage of the power supply 234 can be 0. The initial energy ion beam 104m can enter the ion beam outlet 214 according to the original incident direction. The initial energy ion beam 104m can enter the ion beam outlet 224 through the ion beam outlet 214 according to the original incident direction. The initial energy ion beam 104m can enter the substrate 114 through the ion beam outlet 224 according to the original incident direction.

When the deceleration assembly 201 is turned on, the bias voltage of the power supply 232 can be greater than 0, forming a lower energy ion beam 104n. At this time, the deflection assembly 203f can be turned on to select the charged ion species 1041, and the bias voltage of the power supply 234 can be greater than 0. The path of the lower energy ion beam 104n can be deflected by the deflection assembly 203f and then incident on the ion beam outlet 222. The path of the lower energy ion beam 104n can be incident on the substrate 114 through the ion beam outlet 222. Therefore, the operating rules of the ion implantation system can be shown in Table 5:

For the original ion beam flow direction of the initial energy ion beam 104m of the deceleration device 116f, the ion beam inlet 254 can be located downstream of the ion beam inlet 220. The ion beam outlet 256 can be located downstream of the ion beam inlet 254. The ion beam inlet 210 can be located downstream of the ion beam outlet 256. The ion beam outlet 214 can be located downstream of the ion beam inlet 210. The ion beam outlet 224 can be located downstream of the ion beam outlet 214. The substrate support device 112b at the operating position 112b' can be located downstream of the ion beam outlet 224. Therefore, when the initial energy ion beam 104m without deceleration is used, beam distortion can be avoided.

For the ion beam flow direction when the initial energy ion beam 104m of the deceleration device 116f forms the lower energy ion beam 104n, the ion beam inlet 254 may be located downstream of the ion beam inlet 220. The ion beam outlet 256 may be located downstream of the ion beam inlet 254. The ion beam inlet 210 may be located downstream of the ion beam outlet 256. The ion beam outlet 212 may be located downstream of the ion beam inlet 210. The ion beam outlet 222 may be located downstream of the ion beam outlet 212. The substrate carrier 112b in the operating position 112b" may be located downstream of the ion beam outlet 222. Therefore, energy contamination may be avoided when using an undecelerated lower energy ion beam 104n.

FIG. 11 shows a deceleration device 116g according to some embodiments of the present disclosure. The deceleration device 116g can be used as the deceleration device 116 in the ion implantation system 20 shown in FIG. 3 . The deceleration device 116g is substantially the same as the deceleration device 116f shown in FIG. 10 , and the difference between them is that the deceleration assembly 201 in the deceleration device 116f is replaced by the deceleration assembly 201c shown in FIG. 7 .

Position 214' may be located in the direction of the line connecting position 220' and position 224'. Position 214' may be located between position 220' and position 224'. Position 214' may be located in the direction of the line connecting position 254' and position 257'. Position 214' may be located between position 254' and position 257'.

When the deceleration assembly 201c is turned off, the bias voltage of the power supply 232 can be 0, and the lower energy ion beam 104n is not formed, so there is no energy pollution. At this time, the deflection assembly 203f can also be turned off, and the bias voltage of the power supply 234 can be 0, and the initial energy ion beam 104m can enter the ion beam outlet 214 according to the original incident direction. The initial energy ion beam 104m can enter the ion beam outlet 257 through the ion beam outlet 214 according to the original incident direction. The initial energy ion beam 104m can enter the ion beam outlet 224 through the ion beam outlet 257 according to the original incident direction. The initial energy ion beam 104m can be incident on the substrate 114 through the ion beam outlet 224 according to the original incident direction.

When the deceleration assembly 201c is turned on, the bias voltage of the power supply 232 may be greater than 0, the deflection assembly 203f may be turned on to select the charged ion species 1041, and the bias voltage of the power supply 234 may be greater than 0. The path of the initial energy ion beam 104m may be deflected by the deflection assembly 203f and then enter the ion beam outlet 256. The lower energy ion beam 104n may be formed after leaving the ion beam outlet 256. The lower energy ion beam 104n may enter the ion beam outlet 222. The lower energy ion beam 104n may enter the substrate 114 through the ion beam outlet 222. Therefore, the operating rules of the ion implantation system may be shown in Table 6:

For the original ion beam flow direction of the initial energy ion beam 104m of the deceleration device 116g, the ion beam inlet 254 can be located downstream of the ion beam inlet 220. The ion beam inlet 210 can be located downstream of the ion beam inlet 254. The ion beam outlet 214 can be located downstream of the ion beam inlet 210. The ion beam outlet 257 can be located downstream of the ion beam outlet 214. The ion beam outlet 224 can be located downstream of the ion beam outlet 257. The substrate support device 112b at the operating position 112b' can be located downstream of the ion beam outlet 224. Therefore, when the initial energy ion beam 104m without deceleration is used, beam distortion can be avoided.

For the ion beam flow direction when the initial energy ion beam 104m of the decelerator 116g forms the lower energy ion beam 104n, the ion beam inlet 254 may be located downstream of the ion beam inlet 220. The ion beam inlet 210 may be located downstream of the ion beam inlet 254. The ion beam outlet 212 may be located downstream of the ion beam inlet 210. The ion beam outlet 256 may be located downstream of the ion beam outlet 212. The ion beam outlet 222 may be located downstream of the ion beam outlet 256. The substrate carrier 112b in the operating position 112b" can be located downstream of the ion beam outlet 222. Therefore, when the undecelerated lower energy ion beam 104n is used, energy contamination can be avoided. In addition, the configuration of the deceleration assembly 201c and the deflection assembly 203f in the deceleration device 116g can reduce the equipment volume of the deceleration device 116g.

As used herein, for ease of description, spatially-related terms such as "below", "below", "lower portion", "above", "upper portion", "lower portion", "left side", "right side", etc. may be used herein to describe the relationship between one element or feature shown in the figure and another element or feature. In addition to the orientation shown in the figure, spatially-related terms are intended to cover different orientations of the device in use or operation. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially-related descriptors used herein can also be used accordingly for description. It should be understood that when an element is "connected" or "coupled" to another element, the element can be directly connected or coupled to the other element, or there can be intermediate elements.

As used herein, the terms "substantially," "substantially," "generally," and "about" are used to describe and take into account small variations. When used in conjunction with an event or situation, the term may refer to situations where the event or situation occurs exactly as well as situations where the event or situation occurs approximately. As used herein relative to a given value or range, the term "about" generally means within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. Ranges may be indicated herein as from one endpoint to another or between two endpoints. Unless otherwise specified, all ranges disclosed in this disclosure include the endpoints. The term "substantially coplanar" may refer to two surfaces that are within a few micrometers (μm) along the same plane, such as within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm along the same plane. When referring to "substantially" the same numerical value or characteristic, the term may refer to values within ±10%, ±5%, ±1% or ±0.5% of the mean of the values.

The above simply describes the features of several embodiments and details of the present disclosure. The embodiments described in the present disclosure can be easily used as a basis for designing or modifying other processes, and structures for achieving the same or similar purposes and/or obtaining the same or similar advantages introduced in the embodiments of the present disclosure. These equivalent structures do not depart from the spirit and scope of the present disclosure and can make various changes, substitutions and modifications without departing from the spirit and scope of the present disclosure.

104: Ion beam

104m: Initial energy ion beam

104n: lower energy ion beam

112b: substrate carrier

112b': Operation position

112b":Operation position

113: Rotation axis

114: Substrate

116b: deceleration device

117b: Shell

201: Speed reduction assembly

203b: Deflection assembly

204:Electrode

205:Electrode

210: Ion beam entrance

212: Ion beam outlet

220: Ion beam entrance

220': Position

222: Ion beam outlet

222': Position

224: Ion beam outlet

224': Position

232: Power supply

234: Power supply

250:Electrode

252:Electrode

254: Ion beam entrance

254': Position

256: Ion beam outlet

256': Position

1041: Charged ion species

1042: Neutral species

Claims (20)

An ion beam deceleration device includes: a housing, the housing including a first ion beam inlet located at a first position, a first ion beam outlet located at a second position, and a second ion beam outlet located at a third position, the first position being different from the second position, and the second position being different from the third position; a deceleration assembly located inside the housing and adjacent to the first position; and a deflection assembly located inside the housing and adjacent to the deceleration assembly. The ion beam deceleration device of claim 1, wherein the deflection assembly is closer to the second position than the deceleration assembly. The ion beam deceleration device of claim 1, wherein the deceleration assembly is closer to the second position than the deflection assembly. The ion beam deceleration device of claim 1, wherein the deflection assembly includes a second ion beam inlet, a third ion beam outlet, and a fourth ion beam outlet different from the third ion beam outlet. The ion beam deceleration device of claim 4, wherein the third ion beam outlet is closer to the second position than the fourth ion beam outlet. The ion beam deceleration device of claim 4, wherein the fourth ion beam outlet is closer to the third position than the third ion beam outlet. An ion beam deceleration device as claimed in claim 4, wherein the deflection assembly comprises a first electrode and a second electrode different from the first electrode, and the second electrode comprises the fourth ion beam outlet. An ion implantation system comprises: an ion beam generating device; an ion beam deceleration device as claimed in any one of claims 1 to 7, which is connected to the ion beam generating device in a manner that the ion beam flows; and a substrate supporting device, which is connected to the ion beam deceleration device in a manner that the ion beam flows. An ion implantation system as claimed in claim 8, wherein the substrate support device includes a rotation axis, and the rotation axis is substantially parallel to the emission direction 104n of the first ion beam outlet and the bisector of the emission direction of the second ion beam outlet. An ion implantation system as claimed in claim 8, wherein the substrate support device is configured so that the emission direction of the second ion beam outlet is substantially perpendicular to the substrate surface. An ion beam deceleration device comprises: a housing, the housing comprising a first ion beam inlet and a first ion beam outlet; a motor, coupled to the first ion beam outlet to position the first ion beam outlet at a first position or a second position different from the first position; a deceleration assembly, located inside the housing and downstream of the first ion beam inlet in the ion beam flow direction; and a deflection assembly, located inside the housing and upstream of the first ion beam outlet in the ion beam flow direction. The ion beam deceleration device of claim 11, wherein the deceleration assembly includes a second ion beam inlet, a second ion beam outlet, and a third ion beam outlet different from the second ion beam outlet. The ion beam deceleration device of claim 12, wherein when the first ion beam outlet is located at the first position, the first ion beam outlet is located downstream of the second ion beam outlet in the ion beam flow direction. The ion beam deceleration device of claim 12, wherein when the first ion beam outlet is located at the second position, the first ion beam outlet is located downstream of the third ion beam outlet in the ion beam flow direction. An ion beam deceleration device as claimed in claim 12, wherein the deceleration assembly includes a first electrode and a second electrode different from the first electrode, and the second electrode includes the third ion beam outlet. An ion beam deceleration device as claimed in claim 15, wherein the deflection assembly is located between the first electrode and the second electrode substantially along a direction connecting the second ion beam inlet and the third ion beam outlet. An ion implantation system comprises: an ion beam generating device; an ion beam deceleration device as claimed in any one of claims 11 to 16, which is connected to the ion beam generating device in a manner that the ion beam flows; and a substrate supporting device, which is connected to the ion beam deceleration device in a manner that the ion beam flows. An ion implantation system as claimed in claim 17, wherein the substrate supporting device includes a rotation axis, which is substantially parallel to an emission direction of the first ion beam outlet when the first ion beam outlet is in the first position and a bisector of the emission direction of the first ion beam outlet when the first ion beam outlet is in the second position. An ion implantation system as claimed in claim 17, wherein the substrate support device includes a selective compliance assembly robot arm (SCARA). An ion implantation system as claimed in claim 17, wherein the substrate support device is configured so that the emission direction of the second ion beam outlet is substantially perpendicular to the substrate surface.

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