TWM660744U - Composite cleaning system - Google Patents

Abstract

A composite cleaning system is disclosed, wherein the composite cleaning system is used to perform the composite cleaning process. The composite cleaning system comprises a carrier, a laser cleaning device, and a gas or liquid cleaning device, wherein the carrier is used to carry at least one object having an area to be cleaned on which at least one target to be cleaned is located. In a composite cleaning step of the composite cleaning process, a laser reactive cleaning step is performed on the area to be cleaned of the object by using the laser cleaning device, and a gas or liquid reactive cleaning step is performed on the area to be cleaned of the object by using the gas or liquid cleaning device, such that one of the laser reactive cleaning step and the gas or liquid reactive cleaning step could be assisted by the other to enhance the cleaning effect on the target to be cleaned.

Description

Combined cleaning system

This work is about a cleaning system, and in particular about a combined cleaning system.

There are five major pollutants in the semiconductor wafer process: particles, metal impurities (such as metal ions), organic pollutants, native oxide, and micro-roughness on the wafer surface. The semiconductor wafer process is quite complicated, and every step included in the front-end process or the back-end process, such as etching, oxidation, deposition, photoresist removal, chemical mechanical polishing, packaging and cutting, are sources of wafer surface contamination. These pollutants have a significant impact on process quality and yield, so the wafer process must undergo repeated cleaning processes. Moreover, with the development of very large integrated circuits (VLSI, ULSI), the requirements for wafer cleanliness have become more stringent. Currently, the industry often uses the RCA Standard Clean method to clean wafers. The RCA Standard Clean method was developed by RCA in the 1960s and has been used for a long time. The reason is that there is no new cleaning technology that can effectively replace it (SC-1, also known as APM; SC-2, also known as HPM). Taking the cleaning of substrates as an example, the conventional technology uses SPM/SC-1 cleaning formula, SC-2/SPM/DHF cleaning formula and SC-1 cleaning formula as reactive cleaning ingredients to perform one or more cleaning steps. Taking the cleaning of objects that have completed the front-end process (FEOL) as an example, the known technology is to use SPM/SC-1 cleaning formula, SC-2/SPM/DHF cleaning formula and SPM cleaning formula as reactive cleaning components to perform one or more cleaning steps. Taking the cleaning of objects that have completed the back-end process (BEOL) as an example, the known technology is to use EKC, NMP, IPA, ACE solvent or solution as a cleaning formula to perform one or more cleaning steps, wherein NMP is N-methylpyrrolidon, EKC solution is a mixed solution containing NMP (N-methylpyrrolidon, N-Methylpyrrolidon) solvent and alkaline amine, IPA is isopropyl alcohol, and ACE is acetone. Taking the cleaning of packaged objects as an example, the conventional technology is to use EKC, NMP, IPA, ACE solvents or solutions as cleaning formulas to perform one or more cleaning steps. However, the traditional cleaning process consumes a lot of water and produces a lot of harmful waste emissions.

Furthermore, process nano-ization and "green production" are common trends in the development of high-tech industries at present and in the future. Technologies including deep sub-micron semiconductors, TFT-LCD, III-V communication components, ultra-precision machining, nano-material manufacturing and nano-electronic components are all actively being developed in the direction of ultra-precision and ultra-cleanliness. In the nano-process environment, even if there are very small amounts of pollutants in any link, such as microparticles, metal impurities, organic matter or polymers, it may cause great damage to the process yield. However, this increasingly stringent process cleanliness requirement can no longer be met by the RCA cleaning technology of traditional electronic processes, and the aforementioned processes with high water resource consumption and high pollution water discharge will also seriously affect the development of the high-tech electronic industry.

Although there are technologies that use ozone for cleaning, due to the low solubility of ozone in aqueous solutions and its high sensitivity to environmental variables, it is very easily affected by the concentration of gaseous ozone, solution temperature, and pH, resulting in unstable cleaning efficiency. In addition, although the current technology simply attempts to change physical conditions, such as improving the ozone water gas-liquid contact system and the temperature and pressure operating range of the cleaning system to increase the concentration of ozone water and increase the reaction rate, the improvement is limited, resulting in the fact that ozone water technology has not yet been widely used in the process.

By controlling physical conditions, such as improving the ozone water gas-liquid contact system and the temperature and pressure operating range control of the cleaning system, the ozone water concentration and reaction rate can be increased as much as possible. However, the efficiency in actual application is still not ideal. The reason is that simply changing the physical conditions to approach the thermodynamic ozone saturation concentration has limited improvement on the improvement of ozone water concentration, resulting in the fact that ozone water technology has not yet been widely used in the process.

In view of the above-mentioned problems of the prior art, one of the purposes of this invention is to provide a composite cleaning system that can solve the increasingly stringent process cleanliness requirements.

To achieve the above-mentioned purpose, the present invention proposes a composite cleaning system for performing a composite cleaning step on a region to be cleaned of at least one object, comprising: a carrier for carrying the object, the object having at least one target to be cleaned located in the region to be cleaned of the object; a laser cleaning device for performing a laser cleaning on the region to be cleaned of the object; Reactive cleaning step; and a gas or liquid cleaning device for performing a gas or liquid reactive cleaning step on the area to be cleaned of the object, so that one of the laser reactive cleaning step and the gas or liquid reactive cleaning step can enhance a cleaning effect of the target to be cleaned on the area to be cleaned with the assistance of the other.

The composite cleaning step is to perform the laser reactive cleaning step and the gas or liquid reactive cleaning step on the area to be cleaned of the object simultaneously, sequentially or in reverse order.

The gas or liquid cleaning device is used to perform a cleaning step selected from the group consisting of ozone cleaning, hydrofluoric acid cleaning and RCA cleaning agent cleaning on the area to be cleaned of the object.

Among them, the ozone cleaning method uses ozone water, ozone and/or hydrofluoric acid to clean the area to be cleaned of the object, the hydrofluoric acid cleaning method uses hydrofluoric acid to clean the area to be cleaned of the object, and the RCA cleaning agent cleaning method uses RCA cleaning agent to clean the area to be cleaned of the object.

The gas or liquid cleaning device further comprises a tank, wherein the area to be cleaned of the object is subjected to the gas or liquid reactive cleaning step in the tank.

The gas or liquid cleaning device further comprises a tank, wherein the number of the objects is plural, and the plural objects are placed in the tank at the same time to perform the gas or liquid reactive cleaning step.

The gas or liquid cleaning device of the combined cleaning system includes a vibration element for vibrating the area to be cleaned of the object while performing the combined cleaning step on the area to be cleaned of the object.

The gas or liquid cleaning device of the combined cleaning system includes a temperature control and adjustment element for controlling and adjusting the temperature of the combined cleaning step while performing the combined cleaning step on the area to be cleaned of the object.

Wherein, the carrier is a rotating workbench for rotating the object, so that the gas or liquid cleaning device performs the gas or liquid reactive cleaning step on the area to be cleaned of the rotating object.

The gas or liquid cleaning device includes a gas or liquid supply source, and the gas or liquid supply source is selected from the group consisting of an ozone water generating device, an ozone generating device, a hydrofluoric acid supply device, and an RCA cleaning agent supply device.

The composite cleaning system further includes a polishing step for the area to be cleaned of the object before, between or after the laser reactive cleaning step and the gas or liquid reactive cleaning step.

The composite cleaning system further comprises a plasma device, wherein the plasma device provides a plasma to the area to be cleaned of the object before or after the polishing step.

The composite cleaning step is to perform the polishing step on the area to be cleaned of the object in an environment containing ozone or ozone water.

The combined cleaning step further includes providing a plasma to the area to be cleaned of the object using a plasma device.

Among them, the plasma device is a remote plasma device, and the plasma is a remote plasma.

The laser cleaning device generates a laser beam to provide a pulsed energy to the area to be cleaned of the object in a scanning manner.

In the laser reactive cleaning step, the laser cleaning device allows the target to be cleaned on the area to be cleaned of the object to absorb the pulsed energy and leave the area to be cleaned of the object.

In the laser reactive cleaning step, the laser cleaning device causes a liquid to absorb the pulse energy to generate an explosion pressure wave, thereby producing the cleaning effect on the target to be cleaned on the area to be cleaned of the object with the assistance of the liquid.

In the laser reactive cleaning step, the laser cleaning device provides the pulsed energy to focus on a focal position at a distance from the target to be cleaned, so as to produce the cleaning effect on the target to be cleaned in the area to be cleaned through the plasma shock wave formed at the focal position.

In the laser reactive cleaning step, the laser cleaning device provides adjustable pulsed energy to the area to be cleaned of the object via the laser beam.

The laser beam is a pulsed nanosecond laser with a wavelength of 1,064nm.

As mentioned above, this composite cleaning system has the following advantages and features:

(1) By using laser cleaning equipment and gas or liquid cleaning equipment instead of the known technology of cleaning objects only with RCA cleaning agent cleaning method, the increasingly stringent process cleanliness requirements can be met.

(2) The use of pulsed energy combined with gas or liquid cleaning equipment for gas or liquid reactive cleaning steps can significantly reduce process steps, reduce water consumption, reduce the use and discharge of chemicals, shorten process time and increase productivity.

(3) The gas or liquid reactive cleaning step using pulsed energy combined with a gas or liquid cleaning device has a good cleaning effect on various targets to be cleaned (such as organic matter, polymers, metal impurities, particles and native oxide layers), and the surface roughness is better than the traditional standard cleaning procedure.

(4) Using pulsed energy in combination with a gas or liquid cleaning device for a gas or liquid reactive cleaning step, and then using a plasma device to provide plasma, can further reduce the roughness of the area to be cleaned, remove small defects (crystal level), perform high temperature annealing, and perform micro-growth epitaxy.

(5) The use of ozone (UV-Ozone) or ozone water (DI-Ozone) in the gas or liquid reactive cleaning step can combine or replace the harmful chemicals in the traditional cleaning process, which can reduce water consumption, reduce the use and discharge of chemicals, shorten the process time and increase production capacity. The cleaning effect and surface roughness are better than the traditional standard cleaning procedures.

(6) Using pulsed energy to clean the area to be cleaned can cause the target to be cleaned to absorb the high-energy light from the short pulse of the laser and become ionized and leave.

(7) By using pulsed energy, the reactive cleaning components of the gas or liquid reactive cleaning step of the gas or liquid cleaning device can be selected from ozone (gas or aqueous solution), ozone (gas or aqueous solution) and hydrofluoric acid (gas or aqueous solution) or RCA cleaning agent, all of which can meet the process cleanliness requirements.

In order to help you have a deeper understanding of the technical features and technical effects of this creation, we would like to provide a better implementation example and detailed explanation as follows.

10: Laser cleaning device

12: Laser beam generator

14: Lens set

16: Laser beam

19: Junction

20: Gas or liquid cleaning device

22: Gas or liquid supply source

24: Tank

25: Liquid

26: Oscillating element

28: Temperature control and adjustment elements

50: Polishing device

52: Rotating platform

54: Grinding pad

56: Grinding slurry supply source

57: Grinding pulp

60: Plasma device

62: Plasma source

63: Plasma

64: Cavity

100: Objects

110: Area to be cleaned

120: Target to be cleaned

200: Carrier

S10, S20, S210, S220, S230, S240: Steps

θ: Tilt angle

Figure 1 is a schematic diagram of the process of the composite cleaning process of the first embodiment of this invention.

FIG2 is a schematic diagram of a composite cleaning system of the first embodiment of the present invention, wherein the laser cleaning device and the gas or liquid cleaning device are independent and different devices. FIG2(A) shows the laser reactive cleaning step, and FIG2(B) shows the gas or liquid reactive cleaning step.

FIG3 is a schematic diagram of a composite cleaning system of the first embodiment of the present invention, in which a laser cleaning device and a gas or liquid cleaning device are integrated into the same device.

Figure 4 is a schematic diagram of the process of the composite cleaning process of the second embodiment of this invention.

FIG5 is a schematic diagram of the composite cleaning system of the second embodiment of the present invention. FIG5(A) shows the polishing step, FIG5(B) shows the laser reactive cleaning step, and FIG5(C) shows the gas or liquid reactive cleaning step.

Figure 6 is a schematic diagram of the process of the composite cleaning process of the third embodiment of this invention, Figure 6 (A) is the first process state, and Figure 6 (B) is the second process state.

FIG7 is a schematic diagram of the system of the composite cleaning system of the third embodiment of the present invention. FIG7(A) shows the plasma providing step, FIG7(B) shows the polishing step, FIG7(C) shows the laser reactive cleaning step, and FIG7(D) shows the gas or liquid reactive cleaning step.

Figure 8 is a schematic diagram of the structure of the laser cleaning device of this invention, where the laser beam irradiates the cleaning target at an oblique angle.

In order to facilitate understanding of the technical features, content and advantages of this creation and the effects it can achieve, this creation is described in detail as follows with diagrams and in the form of embodiments. The diagrams used are only for illustration and auxiliary instructions, and may not be the true proportions and precise configurations of this creation after implementation. Therefore, the proportions and configurations of the attached diagrams should not be interpreted to limit the scope of rights of this creation in actual implementation. In addition, for ease of understanding, the same elements in the following embodiments are indicated by the same symbols.

In addition, the terms used throughout the specification and patent application generally have the ordinary meaning of each term used in this field, in the content disclosed herein, and in the specific content, unless otherwise specified. Certain terms used to describe this creation will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing this creation.

The use of "first", "second", "third", etc. in this article does not specifically refer to the order or sequence, nor is it used to limit this creation. It is only to distinguish components or operations described by the same technical terms.

Secondly, the words "include", "including", "have", "contain", etc. used in this article are open terms, which means including but not limited to.

The composite cleaning process and system of the invention uses at least two or more cleaning devices to perform at least two or more reactive cleaning steps on various objects. The invention can achieve a better cleaning effect on the target to be cleaned on the area to be cleaned on the object than the traditional single reactive cleaning step, and can play the role of mutual auxiliary cleaning, thereby meeting the increasingly stringent process cleanliness requirements. The composite cleaning process and system of this invention can be used to remove various contaminants in the process of manufacturing various semiconductor objects, such as particles, metal impurities, organic contaminants, native oxides, and micro-rough structures on the surface of objects, and can also be used to replace the plasma ashing technology used in the traditional photoresist stripping process. The term "cleaning" used in this invention generally refers to cleaning, cleaning, and/or removing the target to be cleaned located on the area to be cleaned of the object, and even includes weakening or overcoming the van der Waals force or electrostatic force between the target to be cleaned and other substances (such as the object to which the target to be cleaned is attached or the object constituted by it). The objects to be cleaned are, for example, various substrates, objects that have completed the front-end-of-line (FEOL), objects that have completed the back-end-of-line (BEOL), or packaging objects, and the structures formed thereon are not limited. The object may also be, for example, a crystal ingot, a wafer before polishing after cutting, or a wafer after polishing. For example, the objects to which the present invention is applicable may be, for example, semiconductors such as first-class semiconductors, second-class semiconductors, or third-class semiconductors, such as, but not limited to, semiconductor materials selected from the group consisting of silicon, gallium arsenide, indium phosphide, gallium nitride, and silicon carbide, and may be, for example, low-bandgap semiconductors (<1.5 eV) or high-bandgap semiconductors (>3.0 eV). It can be seen from this that the target to be cleaned applicable to the present invention may be one or more substances or material layers corresponding to the type of object to be cleaned and the processing process that the object has undergone before cleaning, such as, but not limited to, selected from the group consisting of organic matter (such as photoresist residue), polymers (such as photoresist polymers), metal impurities (such as metal ions), particles, micro-rough structures and native oxide layers, and the above-mentioned target to be cleaned is, for example, attached to the object or constitutes a part of the structure of the object. However, please note that although this creation lists the applicable objects and targets to be cleaned as mentioned above, it is not intended to limit the scope of rights of this creation. Any object or target to be cleaned as long as it can be cleaned by the composite cleaning process or composite cleaning system of this creation is within the scope of protection requested by this creation.

FIG1 is a flow chart of the composite cleaning process of the first embodiment of the present invention, FIG2 is a system diagram of the composite cleaning system of the first embodiment of the present invention, wherein the laser cleaning device and the gas or liquid cleaning device are independent and different devices, FIG2(A) shows the laser reactive cleaning step, FIG2(B) shows the gas or liquid reactive cleaning step, and FIG3 is a system diagram of the composite cleaning system of the first embodiment of the present invention, wherein the laser cleaning device and the gas or liquid cleaning device are integrated into the same device. Please refer to Figures 1, 2 and 3. The composite cleaning process of the present invention includes at least the following steps: a step of providing an object 100 (S10), wherein the object 100 has at least one target 120 to be cleaned located on an area 110 to be cleaned; and performing a composite cleaning step on the area 110 to be cleaned of the object 100 using a composite cleaning system (S20). The above-mentioned composite cleaning step (S20) includes a laser reactive cleaning step (S210) of the area 110 to be cleaned of the object 100 using a laser cleaning device 10; and a gas or liquid reactive cleaning step (S220) of the area 110 to be cleaned of the object 100 using a gas or liquid cleaning device 20. One feature of the invention is that one of the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) can be assisted by the other to enhance the cleaning effect of the target 120 to be cleaned on the area 110 to be cleaned.

Please continue to refer to Figures 1, 2 and 3. The composite cleaning system of the present invention at least includes a laser cleaning device 10 for providing pulsed energy (e.g., one or more laser beams 16) and a gas or liquid cleaning device 20 for providing reactive cleaning components (e.g., one or more reactive gases and/or liquids), wherein the composite cleaning system optionally includes a carrier 200 for carrying at least one object 100 to be cleaned, the number of objects 100 can be one or more, wherein the object 100 has at least one target 120 to be cleaned located on the area 110 to be cleaned. The laser cleaning device 10 includes, for example, a laser beam generator 12 and a lens assembly 14, wherein the laser beam generator 12 generates one or more laser beams 16 and irradiates the object 100 to be cleaned through the lens assembly 14, so as to perform a laser reactive cleaning step (S210), wherein the lens assembly 14 may be selectively omitted or integrated into the laser beam generator 12. The gas or liquid cleaning device 20, for example, includes a gas or liquid supply source 22 for supplying reactive cleaning components (e.g., reactive gas and/or liquid) to the object 100 to be cleaned, and the gas or liquid cleaning device 20 optionally further includes a tank 24, which is, for example, a hollow container, whereby one object 100 or a plurality of objects 100 to be cleaned can be placed in the tank 24 at the same time, and reactive cleaning components (e.g., liquid 25) can be supplied into the tank 24 to perform a gas or liquid reactive cleaning step (S220). The gas or liquid supply source 22 of the gas or liquid cleaning device 20 can selectively use known commercial products, such as, but not limited to, selected from the group consisting of an ozone water generating device, an ozone generating device, a hydrofluoric acid supply device, and an RCA cleaning agent supply device, so as to supply one or more reactive gases and/or liquids. The ozone water generator is used to supply ozone water known for cleaning, the ozone generator is used to supply ozone gas known for cleaning, the hydrofluoric acid supply device is used to supply gaseous or liquid hydrofluoric acid known for cleaning, and the RCA cleaning agent supply device is used to supply RCA cleaning agents known for cleaning, such as, but not limited to, SC-1 cleaning formula and SC-2 cleaning formula, etc.

The gas or liquid cleaning device 20 may further optionally include an oscillating element 26, such as an ultrasonic oscillating element, which generates ultrasonic oscillations to enhance the cleaning effect of the gas or liquid reactive cleaning step (S220). In addition, the gas or liquid cleaning device 20 may further optionally include a temperature control and adjustment element 28, which may be, for example, a known commercial temperature controller, for controlling and adjusting the temperature when the gas or liquid reactive cleaning step (S220) is performed on the object 100. For example, the temperature of the gas or liquid reactive cleaning step (S220) is adjusted in real time according to the temperature required for the reactive cleaning component provided by the gas or liquid reactive cleaning step (S220) to react with the object 120 to be cleaned. The object 100 to be cleaned can also be selectively carried on the carrier 200 and placed in the tank 24 by moving the carrier 200. The laser cleaning device 10 and the gas or liquid cleaning device 20 can be independent of each other (as shown in FIG. 2 ) or integrated with each other (as shown in FIG. 3 ), whereby the present invention can selectively perform the above-mentioned laser reactive cleaning step (S210) and gas or liquid reactive cleaning step (S220) in different devices or in the same device.

In the composite cleaning process of the present invention, the laser reactive cleaning step (S210) and the gas or liquid cleaning device 20 can be selected from the group consisting of a dry cleaning method and a wet cleaning method. The laser cleaning device 10 of the present invention generates one or more laser beams 16 to scan and directly or indirectly provide pulsed energy (e.g., pulsed reactive energy) to the area 110 to be cleaned of the object 100, so as to perform a laser reactive cleaning step (S210) on the area 110 to be cleaned of the object 100, wherein the laser reactive cleaning step (S210) is, for example, selected from a group consisting of a dry cleaning method and a wet cleaning method, so as to achieve the effect of dry or wet cleaning of the area 110 to be cleaned.

In detail, the laser cleaning device 10 generates a laser beam 16 through a laser beam generator 12 to selectively provide fixed or adjustable pulsed energy. For example, the laser cleaning device 10 can provide adjustable pulsed energy by selectively adjusting the scanning speed, pulse width, pulse output cycle, wavelength, repetition frequency, incident angle, penetration depth and/or heat diffusion length of the laser beam 16. Generally, the shorter the wavelength of the laser beam 16, the higher the energy absorbed by the target 120 to be cleaned, and the faster the temperature rise rate. In addition, the invention can also provide a selective cleaning effect by means of the laser beam 16, for example, only removing the target 120 to be cleaned on the area 110 to be cleaned, while retaining the remaining structures or materials on the area 110 to be cleaned. The laser beam provided by the laser cleaning device 10 is, for example, but not limited to, a pulsed nanosecond laser. If the pulse width of the laser beam 16 is greater than the nanosecond (ns) level, although the attack is stronger, the material selectivity is weaker. If the pulse width of the laser beam 16 is less than the nanosecond (ns) level, it is cold ablation and its material specificity is lower. The pulse width of the laser beam 16 used in the present invention is preferably in the nanosecond (ns) level, so that it can have a higher heating and cooling frequency than other levels of pulse width, and has better material characteristics. For example, the laser beam generator 12 of the laser cleaning device 10 can selectively use a known commercial product, such as, but not limited to, a Nd:YAG pulse laser source, a Nd:YVO ₄ pulse laser source, or a KrF pulse laser source. Taking the Nd:YAG pulse laser source as an example, its wavelength is about 1,064nm, the frequency is about 20kHz, and the pulse width is about 150ns, but it is not limited to this. The wavelength generated by the laser beam generator 12 may also be, for example, 266 nm or 532 nm. For example, the moving speed of the laser beam 16 ranges from about 10 mm/sec to about 1,000 mm/sec, the wavelength of the laser beam 16 preferably ranges from about 266 nm to about 1,600 nm, the pulse width is less than about 1,000 ns, the repetition frequency ranges from about 30 Hz to about 10 MHz, the pulse energy (Pulse Energy, E) ranges from about 0.1 μJ to about 10,000 μJ , and the spot diameter ranges from about 0.5 μm to about 100 mm.

The reactive cleaning component provided by the gas or liquid cleaning device 20 of the present invention may be, for example, a reactive gas and/or liquid, such as ozone gas (UV-Ozone) and/or ozone water (DI-Ozone), or even optionally hydrofluoric acid, thereby enhancing the cleaning effect, or reducing or replacing the harmful chemicals used in the traditional cleaning process, or reducing the adverse effects that may be produced on the object. Among them, the reactive cleaning component is selectively, for example, ozone (O3) in the form of gas, which is used directly or in combination with other gases (such as hydrofluoric acid) or liquids (such as hydrofluoric acid solution or RCA cleaning agent) to perform a cleaning step on the area to be cleaned 110. Ozone can be formed or generated in various ways, including by being provided by a known commercial ozone generator, for example, by passing oxygen through an energy field (such as ultraviolet light, plasma or ion field) to generate ozone. In addition, the reactive cleaning component of the present invention can also be selectively an aqueous solution containing ozone (commonly known as ozone water, DI-Ozone), which is used directly or in combination with other gases (such as hydrofluoric acid) or liquids (such as hydrofluoric acid solution or RCA cleaning agent) to clean the area 110, wherein the concentration of ozone in the DI aqueous solution is from about 1 ppm to about 300 ppm. For example, the gas or liquid reactive cleaning step (S220) of the present invention can be, for example, 120 cleaning targets with ozone water having a concentration of about 30 ppm and a flow rate of about 2 lpm (liters per minute) for about 1 hour. In addition, the DI aqueous solution may also include ozone cleaning auxiliary agents, such as carbonate and bicarbonate anions, and organic acids such as formic acid, oxalic acid, acetic acid, and glycolic acid. For example, in the process of removing photoresist by plasma etching combined with SPM cleaning solution in the known technology, after removing most (about 99%) of the photoresist by plasma, the remaining 1% of the photoresist residue is removed by RCA cleaning agent cleaning method. However, the composite cleaning step (S20) of the present invention can perform a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) to replace the conventional RCA cleaning agent cleaning method, or replace part of the cleaning formula in the RCA cleaning agent cleaning method. For example, the present invention can replace the H ₂ O ₂ in the SC-1 cleaning formula of the conventional RCA cleaning agent cleaning method with ozone water (DI-Ozone), or, for example, replace the SPM cleaning solution (H ₂ SO ₄ /H ₂ O ₂ / _... O, i.e., Piranha cleaning solution) is used to remove the remaining 1% of the photoresist residue. Even more, the present invention can also replace the above-mentioned plasma etching method by, for example, a laser reactive cleaning step (S210) to remove most (about 99%) of the photoresist. The volume ratio of hydrofluoric acid to ozone water ranges from about 1:1 to about 10:1, for example.

In the first embodiment, the invention performs a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) on the area 110 to be cleaned of the object 100 at the same time, sequentially or in reverse order, so as to achieve the effect of assisting in cleaning the target 120 to be cleaned. As mentioned above, the laser cleaning device 10 and the gas or liquid cleaning device 20 of the invention can be different independent devices or integrated into the same device, so that the invention can selectively perform the above-mentioned laser reactive cleaning step (S210) and gas or liquid reactive cleaning step (S220) in different devices or in the same device.

In the first aspect of the first embodiment, the invention first uses a laser cleaning device 10 to generate a laser beam 16 to scan directly or indirectly provide pulsed energy to the area 110 to be cleaned of the object 100, so as to perform a laser reactive cleaning step (S210) on the area 110 to be cleaned of the object 100. Then, a gas or liquid cleaning device 20 is used to perform a gas or liquid reactive cleaning step (S220) on the area 110 to be cleaned after the laser reactive cleaning step (S210). Since the laser cleaning device 10 has already performed a laser reactive cleaning step (S210) on the area to be cleaned 110 of the object 100, the invention can enhance the cleaning effect of the gas or liquid reactive cleaning step (S220) on the target 120 to be cleaned in the area to be cleaned 110 by assisting the laser reactive cleaning step (S210).

In the second aspect of the first embodiment, the invention first performs a gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 using a gas or liquid cleaning device 20. Then, a laser cleaning device 10 generates a laser beam 16 to scan and directly or indirectly provide pulsed energy to the area to be cleaned 110 of the object 100, so as to perform a laser reactive cleaning step (S210) on the area to be cleaned 110 that has been cleaned by the gas or liquid reactive cleaning step (S220). Since the gas or liquid cleaning device 20 has already performed a gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 of the object 100, the present invention can enhance the cleaning effect of the laser reactive cleaning step (S210) on the target 120 to be cleaned in the area to be cleaned 110 by assisting the gas or liquid reactive cleaning step (S220).

In the third aspect of the first embodiment, the invention uses a laser cleaning device 10 and a gas or liquid cleaning device 20 to simultaneously perform a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) on the area 110 to be cleaned of the object 100. Since the laser cleaning device 10 and the gas or liquid cleaning device 20 simultaneously perform the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 of the object 100, the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) can assist each other to enhance the cleaning effect of the target 120 to be cleaned in the area to be cleaned 110.

In the composite cleaning process of the present invention, the object 100 is carried on a carrier 200 of the composite cleaning system. The carrier 200 can be a fixed or movable worktable, and can be a fixed or rotating worktable. The configuration or type of the carrier 200 is not limited and can be determined according to the type of the object 100 to be cleaned and the configuration or type of the laser cleaning device 10 and the gas or liquid cleaning device 20. Taking a rotary workbench as an example, the carrier 200 can be selected from a group consisting of horizontal, longitudinal and inclined workbenches, such as a rotary platform used in a known commercial polishing step (e.g., mechanical polishing or chemical-mechanical polishing (CMP)). Alternatively, the gas or liquid cleaning device 20 is, for example, a known commercial photoresist removal cleaning machine (e.g., a spray solvent tool (SST)), and the carrier 200 is a rotary carrier of the SST machine, thereby, for example, simultaneously performing a gas or liquid reactive cleaning step on the to-be-cleaned area 110 of the rotating object 100.

In other words, the composite cleaning step of the present invention can selectively perform the above-mentioned laser reactive cleaning step (S210) on a part or all of the area 120 having the mark 120 to be cleaned on the area 110 to be cleaned of the object 100, and selectively perform the gas or liquid reactive cleaning step (S220) on the above-mentioned part or all of the area 110 to be cleaned of the object. In other words, in the present invention, the cleaning areas cleaned by the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) are preferably overlapped, but are not limited to being exactly the same. As long as they can provide an auxiliary cleaning effect, they are all within the scope of protection requested by the present invention. For example, in the composite cleaning step of the present invention, the laser cleaning device 10 may also perform the above-mentioned laser reactive cleaning step (S210) only on the target 120 to be cleaned on the area 110 to be cleaned, while the gas or liquid reactive cleaning step (S220) is to perform the gas or liquid reactive cleaning step (S220) on the area 110 to be cleaned including the target 120 to be cleaned.

The laser cleaning device 10 of the present invention can perform a laser reactive cleaning step (S210) by, for example, etching cleaning, liquid-assisted laser cleaning, and/or laser shock wave cleaning. Taking etching cleaning as an example, when performing the laser reactive cleaning step (S210) of the composite cleaning process, the object 100 to which the present invention is applicable is not limited to being located in an air environment. Regardless of whether the object 100 to be cleaned is located in a liquid environment or in a gas environment, the present invention can directly irradiate (e.g., focus) the target 120 to be cleaned of the object 100 by the laser beam 16 generated by the laser cleaning device 10, so that The target 120 to be cleaned in the area 110 to be cleaned directly absorbs the pulsed energy of the laser beam 16 (e.g., short pulse) and then ionizes and leaves the area 110 to be cleaned and/or weakens the strength of the bond (Van der Waals bond) between the target 120 to be cleaned and the object 100 or causes defects or instability, thereby facilitating the overall cleaning effect of the composite cleaning step (S20) on the area 110 to be cleaned. The liquid or gas may be the same as or different from the reactive cleaning component used in the above-mentioned gas or liquid reactive cleaning step (S220). In addition, in the etching cleaning method, the laser beam 16 can be selectively irradiated directly on the intersection 19 (shadow interface) (as shown in FIG8) between the target 120 to be cleaned (e.g., metal impurities or particles) and the object 100. Due to the different material properties (e.g., thermal expansion coefficient) between the target 120 to be cleaned and the object 100, stress can be generated at the intersection 19, which helps to separate the target 120 to be cleaned from the object 100. Although the laser beam 16 provided by the present invention can be directly irradiated directly above the target 120 to be cleaned, that is, the irradiation direction of the laser beam 16 is perpendicular to the object 100, it is not limited thereto. For example, as shown in FIG8 , in order to allow the junction 19 between the target 120 to be cleaned and the object 100 to effectively absorb the pulsed energy of the laser beam 16 (e.g., a short pulse), the laser beam 16 may selectively irradiate the junction 19 between the target 120 to be cleaned (e.g., metal impurities or particles) and the object 100 at an inclined angle θ, so as to avoid the top of the target 120 to be cleaned blocking the laser beam 16 from directly irradiating the above-mentioned junction 19. Alternatively, in the etching cleaning method, the laser beam 16 may also irradiate the target 120 to be cleaned in a reverse side manner, that is, the laser beam 16 preferably irradiates and penetrates the object 100 (e.g., a non-light-absorbing substrate), and then irradiates the bottom of the target 120 to be cleaned, such as the junction 19 between the target 120 to be cleaned and the object 100. The irradiation direction of the laser beam 16 is, for example, different from the extension direction of the target 120 to be cleaned, for example, non-perpendicular to the object 100. In other words, the above-mentioned tilt angle ranges from about 89 degrees to about 179 degrees.

Taking the liquid-assisted laser cleaning method as an example (please also refer to FIG. 2 ), if the object 100 to be cleaned is located in the liquid 25 , the present invention can, for example, enable the liquid 25 to absorb the pulsed (e.g., short pulse) reactive energy of the laser beam 16 , thereby producing a cleaning effect on the target 120 to be cleaned on the area 110 to be cleaned of the object 100 through the assistance of the liquid 25 . For example, the laser beam 16 provided by the present invention can be directly focused to irradiate the liquid 25 (e.g., water or alcohol (e.g., isopropyl alcohol)) near (or near or around) the target 120 to be cleaned. The explosion pressure wave (pressure wave) generated by the explosion evaporation of the liquid 25 due to the increase in temperature (overheating) can reduce or eliminate the bonding force between the target 120 to be cleaned and the object 100, so that the cleaning effect can be achieved. Moreover, the present invention can also reduce the generation of thermal stress by heating the liquid 25. The above-mentioned liquid 25 can be the same as or different from the reactive cleaning component used in the above-mentioned gas or liquid reactive cleaning step (S220). Taking the liquid-assisted laser cleaning method to remove gold and tungsten particles (particle size of about μm level) on the surface of a silicon substrate as an example, the laser beam generator 12 can use a KrF pulse laser source, the pulse width of the laser beam 16 is about 30ns, the repetition frequency range is about 100Hz, the pulse energy is about 0.3J/ ^cm2 , and the wavelength is about 248nm. Taking the liquid-assisted laser cleaning method to remove aluminum oxide particles (Al ₂ O ₃ , particle size of about 60 nm) on the surface of a silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 7ns, the repetition frequency range is about 8Hz, the pulse energy is about 0.17J/cm ² , and the wavelength is about 532nm.

Taking the laser shock wave cleaning method as an example, the present invention can focus the pulsed energy provided by the laser beam 16 at a focal position at a distance (e.g., adjacent to or called near or around) the target 120 to be cleaned, wherein the object 100 can be, for example, located in an air environment or a gaseous environment, so that the gas molecules at this focal position are ionized to form a rapidly expanding plasma to generate a plasma shock wave, so that it can be used to remove the target 120 to be cleaned. The gas in the gaseous environment can be the same as or different from the reactive cleaning component used in the gas or liquid reactive cleaning step (S220) described above. In short, the present invention can achieve a cleaning effect of the composite cleaning step (S20) on the area to be cleaned 110 by performing a laser reactive cleaning step (S210) on the target 120 to be cleaned, either by directly contacting (focusing) the target 120 to be cleaned with the laser beam 16 or by indirectly contacting (focusing) the target 120 to be cleaned with the laser beam 16, and regardless of whether the laser beam 16 is in a liquid environment or a gas environment. Taking etching cleaning or laser shock wave cleaning as an example to remove silicon dioxide particles (e.g., fused silica particles, with a particle size of about 5 μm) on the surface of a silicon substrate, the laser beam generator 12 may use a KrF pulse laser source, the pulse width of the laser beam 16 is about 15 ns, the repetition frequency range is about 30 Hz, the pulse energy is about 60 mJ/cm ² , and the wavelength is about 248 nm. Taking the etching cleaning method or the laser shock wave cleaning method to remove copper particles (particle size is about 1 μm) on the surface of the silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 10ns, the repetition frequency range is about 10kHz, the pulse energy is about 0.18/0.46mJ/ ^cm2 , and the wavelength is about 266/352nm. Taking the etching cleaning method or laser shock wave cleaning method to remove the gold layer (thickness of about 48nm) deposited on the surface of the silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 100ns, the repetition frequency range is about 2kHz, the pulse energy is about 10mJ/ ^cm2 , and the wavelength is about 1,064nm. Taking the etching cleaning method or the laser shock wave cleaning method to remove polystyrene latex nanoparticles (particle size is about 300nm) on the surface of the silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 6ns, the pulse energy is about 100-600mJ/ ^cm2 , and the wavelength is about 1,064nm.

The gas or liquid reactive cleaning step (S220) of the present invention provides reactive cleaning components (e.g., reactive gas and/or liquid) for performing a cleaning step selected from a group consisting of dry cleaning methods and wet cleaning methods, wherein the gas or liquid reactive cleaning step (S220) is, for example, a cleaning step selected from a group consisting of ozone cleaning methods, hydrofluoric acid cleaning methods, and RCA cleaning agent cleaning methods on the area to be cleaned 110 of the object 100. For example, the ozone cleaning method described above may be a dry cleaning method using ozone gas (UV-Ozone) and/or a wet cleaning method using ozone water (DI-Ozone), wherein the concentration of ozone in the DI water solution ranges from about 1 ppm to about 300 ppm, and the cleaning temperature ranges from about 0 degrees Celsius to about 60 degrees Celsius. The hydrofluoric acid cleaning method mentioned above may be, for example, a dry cleaning method using hydrofluoric acid (HF) gas and/or a wet cleaning method using hydrofluoric acid liquid (e.g., diluted hydrofluoric acid liquid), wherein the volume ratio of HF: _H2O is in the range of about 1:2 to about 1:10, and the cleaning temperature is in the range of about 20 degrees Celsius to about 25 degrees Celsius. Hydrofluoric acid has the property of being able to dissolve silicon dioxide, so it can remove the oxide layer (e.g., native oxide layer) generated on the surface of the silicon substrate, and at the same time remove the particles and metal impurities adsorbed on the oxide layer. In addition, while removing the oxide layer, silicon-hydrogen bonds can be formed on the surface of the silicon substrate to make the silicon surface hydrophobic. The RCA cleaning agent cleaning method is, for example, to use SC-1 and SC-2 cleaning formulas, and may even selectively include using SPM cleaning liquid (such as SC-3 cleaning formula), wherein the SC-1 cleaning formula is, for example, NH ₄ OH/H ₂ O ₂ /H ₂ O, the volume ratio range is about 1:1:5 to about 1:2:7, the cleaning time range is about 10 minutes to about 20 minutes, and the cleaning temperature range is about 65 degrees Celsius to about 80 degrees Celsius. The SC-1 cleaning formula is preferably used for alkaline oxidation to remove particles on the silicon substrate, and can oxidize and remove a small amount of organic matter (such as residual photoresist) and metal pollution such as Au, Ag, Cu, Ni, Cd, Zn, Ca, Cr on the surface. Controlling the cleaning temperature below 80 degrees Celsius helps to reduce the loss caused by the volatility of ammonia and hydrogen peroxide; the SC-2 cleaning formula is, for example, HCl/H ₂ O ₂ /H ₂ O, the volume ratio range is about 1:1:5 to about 1:2:8, the cleaning time range is about 10 minutes to about 20 minutes, and the cleaning temperature range is about 75 degrees _Celsius to about 85 degrees Celsius; the SC-3 cleaning formula is, for example, _H2SO4 / _{H2O2 / H2O} , the volume ratio is about 5:1:1, and the cleaning temperature range is about 120 degrees Celsius to about 280 degrees Celsius. The SC-3 cleaning formula has a high oxidation ability, which can oxidize metals and dissolve them in the cleaning solution, and can oxidize organic matter to generate _CO2 and _H2O . SC-3 cleaning formula can clean organic pollution and some metal impurities on the surface of silicon substrates. However, when the organic pollution is particularly serious, the organic matter will be carbonized and difficult to remove.

Taking cleaning substrates, FEOL, BEOL and packaged objects as an example, the present invention performs a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) to replace the conventional technology of only using the RCA cleaning agent cleaning method to clean the target 120. Among them, the gas or liquid reactive cleaning step (S220) of the composite cleaning step (S20) of the present invention can selectively use any one or a combination of multiple methods of the ozone cleaning method, the hydrofluoric acid cleaning method and the RCA cleaning agent cleaning method.

FIG4 is a schematic diagram of the process of the composite cleaning process of the second embodiment of the present invention. FIG5 is a schematic diagram of the system of the composite cleaning system of the second embodiment of the present invention, FIG5(A) shows the polishing step, FIG5(B) shows the laser reactive cleaning step, and FIG5(C) shows the gas or liquid reactive cleaning step. As shown in FIG4 and FIG5, in the second embodiment of the present invention, in addition to the device shown in the first embodiment, the composite cleaning system of the present invention further includes a polishing device 50. The composite cleaning step (S20) of the present invention optionally further includes performing a polishing step (S230) on the area 110 to be cleaned of the object 100 using a polishing device 50 (e.g., a mechanical polishing device or a chemical mechanical polishing device), and then performing a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) on the area 110 to be cleaned of the object 100 simultaneously, sequentially or in reverse order. Taking the polishing device 50 as an example of a chemical mechanical polishing device, the structure of the polishing device 50 includes a rotating platform 52, a polishing pad 54 and a polishing slurry supply source 56. The rotating platform 52 is used to drive the polishing pad 54 to rotate relative to the object 100 on the carrier 200, and the polishing slurry supply source 56 is used to supply polishing slurry 57 between the polishing pad 54 and the object 100, thereby performing a polishing step (S230) on the object 100. However, the present invention is not limited thereto, and the present invention can also selectively perform a polishing step (S230) on the area to be cleaned 110 of the object 100 before, during, or after the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220).

FIG6 is a schematic diagram of the process of the composite cleaning process of the third embodiment of the present invention, FIG6(A) is a first process state, and FIG6(B) is a second process state. FIG7 is a schematic diagram of the system of the composite cleaning system of the third embodiment of the present invention, FIG7(A) shows the plasma providing step, FIG7(B) shows the polishing step, FIG7(C) shows the laser reactive cleaning step, and FIG7(D) shows the gas or liquid reactive cleaning step. As shown in FIG. 6 and FIG. 7 , in the third embodiment of the present invention, in addition to the device shown in the second embodiment, the composite cleaning system of the present invention further includes a plasma device 60, for example, including a plasma source 62 and a cavity 64, wherein the cavity 64 is used to place the object 100, and the plasma source 62 is used to provide plasma 63 to the area to be cleaned 110 of the object 100 in the composite cleaning step S20. The plasma device 60 is, for example, a remote plasma device, and the plasma 63 is, for example, a remote plasma, but is not limited thereto. As shown in Figures 6(A), 7(B), 7(C) and 7(D), before or after the laser reactive cleaning step S210 or the gas or liquid reactive cleaning step (S220), the plasma device 60 of the present invention can, for example, provide a plasma step (S240) to the area 110 to be cleaned of the object 100. In addition, as shown in FIG. 6(B) and FIG. 7(A) to FIG. 7(D), the composite cleaning step (S20) of the present invention is optionally further included before or after the polishing step (S230). For example, after the polishing step (S230), a plasma providing step (S240) is performed by the plasma device 60 to provide plasma 63 to the object 100 to be cleaned. The area 110 of the object 100 to be cleaned has the effects of, for example, reducing roughness, removing small defects (crystal level), high temperature annealing and micro-growth epitaxy, and then simultaneously, sequentially or in reverse order, performing a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) on the area 110 of the object 100 to be cleaned. In the present invention, the use order (e.g., the arrows in the figure indicate the direction) and the matching method of the laser cleaning device 10, the gas or liquid cleaning device 20, the polishing device 50 and the plasma device 60 can be adjusted accordingly according to the actual application, such as the state of the object to be cleaned (i.e., the previous process before the composite cleaning process of the present invention is carried out). For example, the present invention can perform the polishing step (S230) using a known commercial abrasive slurry (e.g., adding aluminum oxide, silicon dioxide, spinel, tertium trioxide, and zirconium oxide), or the present invention can perform the polishing step (S230) on the area 110 to be cleaned of the object 100 in an environment containing ozone or ozone water, for example, Dissolved in the above-mentioned known commercial polishing slurry, gas or liquid reactive cleaning step (S220) and polishing step (S230) (such as mechanical polishing or chemical mechanical polishing, CMP) can be carried out simultaneously, wherein the concentration of ozone in the DI aqueous solution ranges from about 1 ppm to about 300 ppm, depending on the target to be cleaned. In addition, the DI aqueous solution may also contain ozone cleaning auxiliary agents, such as carbonate and bicarbonate anions, and organic acids, such as formic acid, oxalic acid, acetic acid and glycolic acid.

In the present invention, when the composite cleaning system is used to perform different cleaning steps of the composite cleaning process (e.g., performing a laser reactive cleaning step (S210), performing a gas or liquid reactive cleaning step (S220), performing a polishing step (S230), and providing a plasma step (S240), the carrier 200 used to carry the object 100 can be the same or replaced with a different one. If the same one is used, the carrier 200 and the object 100 carried by it can be moved by a conveying system (not shown) such as a conveyor belt or a robot arm. Move from the previous cleaning device to the next cleaning device to perform a cleaning step. If they are different, the object 100 can be moved to a different carrier 200 by a conveying system such as a conveyor belt or a robot arm (not shown) to perform a cleaning step. In other words, when the present invention uses a composite cleaning system to perform different cleaning steps of a composite cleaning process, if multiple cleaning devices are selectively integrated together, the use of the above-mentioned conveying system can be omitted, which helps to shorten the process cost, process time and improve productivity.

In summary, this composite cleaning system has the following advantages and features:

(1) By using laser cleaning equipment and gas or liquid cleaning equipment instead of the known technology of cleaning objects only with RCA cleaning agent cleaning method, the increasingly stringent process cleanliness requirements can be met.

(2) The use of pulsed energy combined with gas or liquid cleaning equipment for gas or liquid reactive cleaning steps can significantly reduce process steps, reduce water consumption, reduce the use and discharge of chemicals, shorten process time and increase productivity.

(3) The gas or liquid reactive cleaning step using pulsed energy combined with a gas or liquid cleaning device has a good cleaning effect on various targets to be cleaned (such as organic matter, polymers, metal impurities, particles and native oxide layers), and the surface roughness is better than the traditional standard cleaning procedure.

(4) Using pulsed energy in combination with a gas or liquid cleaning device for a gas or liquid reactive cleaning step, and then using a plasma device to provide plasma, can further reduce the roughness of the area to be cleaned, remove small defects (crystal level), perform high temperature annealing, and perform micro-growth epitaxy.

(5) The use of ozone (UV-Ozone) or ozone water (DI-Ozone) in the gas or liquid reactive cleaning step can combine or replace the harmful chemicals in the traditional cleaning process, which can reduce water consumption, reduce the use and discharge of chemicals, shorten the process time and increase production capacity. The cleaning effect and surface roughness are better than the traditional standard cleaning procedures.

(6) Using pulsed energy to clean the area to be cleaned can cause the target to be cleaned to absorb the high-energy light from the short pulse of the laser and become ionized and leave.

(7) By using pulsed energy, the reactive cleaning components of the gas or liquid reactive cleaning step of the gas or liquid cleaning device can be selected from ozone (gas or aqueous solution), ozone (gas or aqueous solution) and hydrofluoric acid (gas or aqueous solution) or RCA cleaning agent, all of which can meet the process cleanliness requirements.

The above is for illustrative purposes only and is not intended to be limiting. Any equivalent modification or change made to the invention without departing from the spirit and scope of the invention shall be included in the scope of the patent application attached hereto.

10: Laser cleaning device

12: Laser beam generator

14: Lens set

16: Laser beam

20: Gas or liquid cleaning device

22: Gas or liquid supply source

24: Tank

25: Liquid

26: Oscillating element

28: Temperature control and adjustment elements

100: Objects

110: Area to be cleaned

120: Target to be cleaned

200: Carrier

Claims (21)

A composite cleaning system is used to perform a composite cleaning step on a region to be cleaned of at least one object, comprising: a carrier for carrying the object, the object having at least one target to be cleaned located in the region to be cleaned of the object; a laser cleaning device for performing a laser reactive cleaning step on the region to be cleaned of the object; and a gas or liquid cleaning device for performing a gas or liquid reactive cleaning step on the area to be cleaned of the object, so that one of the laser reactive cleaning step and the gas or liquid reactive cleaning step can enhance a cleaning effect of the target to be cleaned on the area to be cleaned with the assistance of the other. A composite cleaning system as described in claim 1, wherein the composite cleaning step is to perform the laser reactive cleaning step and the gas or liquid reactive cleaning step on the area to be cleaned of the object simultaneously, sequentially or in reverse order. The combined cleaning system as described in claim 1, wherein the gas or liquid cleaning device is used to perform a cleaning step selected from the group consisting of ozone cleaning, hydrofluoric acid cleaning and RCA cleaning agent cleaning on the area to be cleaned of the object. The composite cleaning system as described in claim 3, wherein the ozone cleaning method uses ozone water, ozone and/or hydrofluoric acid to clean the area to be cleaned of the object, the hydrofluoric acid cleaning method uses hydrofluoric acid to clean the area to be cleaned of the object, and the RCA cleaning agent cleaning method uses RCA cleaning agent to clean the area to be cleaned of the object. A composite cleaning system as described in claim 1, wherein the gas or liquid cleaning device further comprises a tank, wherein the area to be cleaned of the object is subjected to the gas or liquid reactive cleaning step in the tank. A composite cleaning system as described in claim 3, wherein the gas or liquid cleaning device further comprises a tank, wherein the number of the objects is plural, and the plural objects are placed in the tank simultaneously to perform the gas or liquid reactive cleaning step. A compound cleaning system as described in claim 1, wherein the gas or liquid cleaning device of the compound cleaning system further comprises a vibration element for vibrating the area to be cleaned of the object while performing the compound cleaning step on the area to be cleaned of the object. A combined cleaning system as described in claim 1, wherein the gas or liquid cleaning device of the combined cleaning system includes a temperature control and adjustment element for controlling and adjusting the temperature of the combined cleaning step when the combined cleaning step is performed on the area to be cleaned of the object. The composite cleaning system as described in claim 1, wherein the carrier is a rotating workbench for rotating the object, so that the gas or liquid cleaning device performs the gas or liquid reactive cleaning step on the area to be cleaned of the rotating object. A composite cleaning system as described in claim 1, wherein the gas or liquid cleaning device comprises a gas or liquid supply source, and the gas or liquid supply source is selected from the group consisting of an ozone water generating device, an ozone generating device, a hydrofluoric acid supply device, and an RCA cleaning agent supply device. The combined cleaning system as described in claim 1 further includes a step of polishing the area to be cleaned of the object before, between or after the laser reactive cleaning step and the gas or liquid reactive cleaning step. The composite cleaning system as described in claim 11 further comprises a plasma device, wherein the plasma device provides a plasma to the area to be cleaned of the object before or after the polishing step. The combined cleaning system as described in claim 11, wherein the combined cleaning step is to perform the polishing step on the area to be cleaned of the object in an environment containing ozone or ozone water. A combined cleaning system as described in claim 1, wherein the combined cleaning step further includes providing a plasma to the area to be cleaned of the object using a plasma device. A composite cleaning system as described in claim 12 or 14, wherein the plasma device is a remote plasma device and the plasma is a remote plasma. A composite cleaning system as described in claim 1, wherein the laser cleaning device generates a laser beam to provide a pulsed energy to the area to be cleaned of the object in a scanning manner. A composite cleaning system as described in claim 16, wherein the laser cleaning device in the laser reactive cleaning step causes the target to be cleaned on the area to be cleaned of the object to absorb the pulsed energy and leave the area to be cleaned of the object. The composite cleaning system as described in claim 16, wherein the laser cleaning device in the laser reactive cleaning step causes a liquid to absorb the pulse energy to generate an explosion pressure wave, thereby producing the cleaning effect on the target to be cleaned on the area to be cleaned of the object with the assistance of the liquid. A composite cleaning system as described in claim 16, wherein the laser cleaning device provides the pulsed energy to focus on a focal position at a distance from the target to be cleaned in the laser reactive cleaning step, so as to produce the cleaning effect on the target to be cleaned in the area to be cleaned through the plasma shock wave formed at the focal position. A composite cleaning system as described in claim 16, wherein the laser cleaning device provides adjustable pulsed energy to the area to be cleaned of the object via the laser beam in the laser reactive cleaning step. A composite cleaning system as described in claim 16, wherein the laser beam is a pulsed nanosecond laser with a wavelength of 1,064 nm.