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TWM652119U - Micro-electromagnetic element, electromagnetic transducer and electronic device - Google Patents

Micro-electromagnetic element, electromagnetic transducer and electronic device Download PDF

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Publication number
TWM652119U
TWM652119U TW112208799U TW112208799U TWM652119U TW M652119 U TWM652119 U TW M652119U TW 112208799 U TW112208799 U TW 112208799U TW 112208799 U TW112208799 U TW 112208799U TW M652119 U TWM652119 U TW M652119U
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Taiwan
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micro
conductive
electromagnetic
layer
magnetic
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TW112208799U
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Chinese (zh)
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周宏達
王成川
王冠智
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聖德斯貴股份有限公司
大陸商廈門聖德斯貴電子科技有限公司
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Priority to TW112208799U priority Critical patent/TWM652119U/en
Publication of TWM652119U publication Critical patent/TWM652119U/en

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Abstract

A micro-electromagnetic element, an electromagnetic transducer and an electronic device are provided. The micro-electromagnetic element includes at least one element layer. The element layer includes a substrate and multiple conductive segments formed on a front of the substrate. There is a gap between every two adjacent conductive segments. When at least two element layers are provided, the element layers can be inter-superimposed and the conductive segments on each of the element layers will not be intersected. As compared to the conventional coil element, an interactive force applied to between the micro-electromagnetic element and a magnetic element becomes stronger and therefore the size of the micro-electromagnetic element can be smaller.

Description

微電磁元件、電磁換能器及電子裝置Microelectromagnetic components, electromagnetic transducers and electronic devices

本新型涉及換能器件領域,特別是指一種微電磁元件、電磁換能器及電子裝置。 The invention relates to the field of energy transducing devices, in particular to a micro-electromagnetic element, an electromagnetic transducer and an electronic device.

電磁換能器是利用通電導體產生的磁場與磁性元件產生的磁場相互作用,以驅動通電導體動作的器件。電磁換能器應用廣泛,例如電磁換能器可以應用到揚聲器中驅動振膜振動以驅動揚聲器發聲,電磁換能器還可以應用到電磁閥中驅動閥芯動作以驅動電磁閥啟閉。 An electromagnetic transducer is a device that uses the magnetic field generated by an energized conductor to interact with the magnetic field generated by a magnetic element to drive the action of the energized conductor. Electromagnetic transducers are widely used. For example, electromagnetic transducers can be used in speakers to drive diaphragm vibration to drive the speakers to produce sound. Electromagnetic transducers can also be used in solenoid valves to drive valve core movement to drive the solenoid valve to open and close.

在現有的電磁換能器中,通電導體一般採用的線圈元件,線圈元件由金屬絲纏繞而成,線圈元件呈環狀,而磁性元件(如磁鐵)則是穿過線圈元件或者套置線圈元件,線圈元件與磁性元件之間的磁力線呈放射狀;由於線圈元件呈環狀,那麼就需要考慮磁性元件與線圈元件之間360°方向上的間隙設置以避免磁性元件與線圈元件發生碰撞;因此磁性元件與線圈元件之間的間隙會設置的較大(如耳機中的磁性元件與線圈元件之間的間隙需要至少為1.2mm),而磁性元件與線圈元件之間的間隙越大,則會使得線圈元件與磁性元件之間的磁阻大,使得線圈元件與磁性元件之間的相互作用力減小;另外磁性元件和線圈元件相互套置,這樣磁性元件和線圈元件的尺寸相互制約,導致磁性元件和線圈元件的其中之一的尺寸不能做的很大,這也影響了 線圈元件與磁性元件之間的相互作用力。 In existing electromagnetic transducers, energized conductors generally use coil elements. The coil elements are wound by metal wires. The coil elements are ring-shaped, and magnetic elements (such as magnets) pass through the coil elements or are nested within the coil elements. , the magnetic field lines between the coil element and the magnetic element are radial; since the coil element is annular, it is necessary to consider the gap setting in the 360° direction between the magnetic element and the coil element to avoid collision between the magnetic element and the coil element; therefore The gap between the magnetic element and the coil element will be set larger (for example, the gap between the magnetic element and the coil element in the earphone needs to be at least 1.2mm), and the larger the gap between the magnetic element and the coil element, the greater the gap will be. The magnetic resistance between the coil element and the magnetic element is large, so that the interaction force between the coil element and the magnetic element is reduced; in addition, the magnetic element and the coil element are nested with each other, so that the sizes of the magnetic element and the coil element restrict each other, resulting in The size of one of the magnetic components and the coil component cannot be made very large, which also affects the The interaction force between the coil element and the magnetic element.

本新型的目的在於提供一種微電磁元件、電磁換能器及電子裝置,該微電磁元件與磁性元件之間的相互作用力大。 The purpose of the present invention is to provide a micro-electromagnetic element, an electromagnetic transducer and an electronic device, with a large interaction force between the micro-electromagnetic element and the magnetic element.

為了達成上述目的,本新型的解決方案是:一種微電磁元件,其包括至少一層元件層;所述元件層包括一基片以及設置於基片正面的多個導電段,相鄰導電段之間具有間隙;當所述元件層的數量為至少兩層以上時,各元件層相互疊合,且各元件層的導電段無交叉。 In order to achieve the above purpose, the novel solution is: a micro-electromagnetic component, which includes at least one component layer; the component layer includes a substrate and a plurality of conductive segments disposed on the front side of the substrate, between adjacent conductive segments There is a gap; when the number of the element layers is at least two, each element layer is superimposed on each other, and the conductive segments of each element layer do not cross.

所述元件層還包括設置於基片正面上的正導電端和負導電端,元件層的部分或全部的導電段的第一端與元件層的正導電端連接,元件層的部分或全部的導電段的第二端與元件層的負導電端連接。 The element layer also includes a positive conductive end and a negative conductive end disposed on the front surface of the substrate. The first end of part or all of the conductive segments of the element layer is connected to the positive conductive end of the element layer. Part or all of the element layer The second end of the conductive segment is connected to the negative conductive end of the element layer.

所述元件層的導電段劃分為至少兩個微線段區域,每個微線段區域具有多個導電段,且相鄰微線段區域之間形成間隔;所述元件層還包括數量與微線段區域相同的正導電端和負導電端,元件層的各個正導電端和負導電端設置於該元件層的基片正面,元件層的每個微線段區域與元件層的一個正導電端和一個負導電端對應設置;每個微線段區域的部分或全部的導電段的第一端與該微線段區域對應的正導電端連接,每個微線段區域的部分或全部的導電段的第二端與該微線段區域對應的負導電端連接。 The conductive segments of the component layer are divided into at least two micro-segment areas, each micro-segment area has multiple conductive segments, and intervals are formed between adjacent micro-segment areas; the component layer also includes the same number as the micro-segment areas. The positive conductive end and the negative conductive end of the element layer are arranged on the front surface of the substrate of the element layer. Each micro line segment area of the element layer is connected to one positive conductive end and one negative conductive end of the element layer. The ends are arranged correspondingly; the first end of part or all of the conductive segments in each micro line segment area is connected to the corresponding positive conductive end of the micro line segment area, and the second end of part or all of the conductive segments in each micro line segment area is connected to the positive conductive end. The corresponding negative conductive end of the micro line segment area is connected.

當所述元件層的數量為至少兩層以上時,某個元件層的部分或全部的導電段的第一端與該元件層相鄰的元件層的基片上設置的正導電端連接,且該元件層的部分或全部的導電段的第二端與該元件層相鄰的元件層的基片上設置的負導電端連接。 When the number of the element layers is at least two, the first end of part or all of the conductive segments of a certain element layer is connected to the positive conductive end provided on the substrate of the element layer adjacent to the element layer, and the The second end of some or all of the conductive segments of the element layer is connected to the negative conductive end provided on the substrate of the element layer adjacent to the element layer.

所述正導電端和負導電端分別設有正導電孔和負導電孔。 The positive conductive end and the negative conductive end are respectively provided with positive conductive holes and negative conductive holes.

當所述元件層的數量為至少兩層以上時,相鄰元件層的正導電端和負導電端相互連接而使得相鄰元件層實現串聯或並聯。 When the number of the element layers is at least two, the positive conductive ends and negative conductive ends of adjacent element layers are connected to each other so that the adjacent element layers are connected in series or in parallel.

至少一層元件層的基片設置有導磁體。 The substrate of at least one component layer is provided with a magnetic conductor.

所述元件層的基片的材質為矽、陶瓷、玻璃、藍寶石、雷射直接成型(Laser Direct Structuring,LDS)塑膠、鍺、砷化鎵、磷化銦、氮化鎵、碳化矽、雙馬來醯亞胺-三氮雜苯(BT)、味之素建構膜(ABF)、電木板、玻璃纖維、塑膠或硒化鋅中的一種。 The substrate of the component layer is made of silicon, ceramics, glass, sapphire, laser direct structuring (LDS) plastic, germanium, gallium arsenide, indium phosphide, gallium nitride, silicon carbide, or double-dry nitride. One of the following: BT, Ajinomoto Building Film (ABF), bakelite, fiberglass, plastic or zinc selenide.

所述元件層的各個導電段呈直線段結構,且元件層的各個導電段相互平行。 Each conductive segment of the element layer has a linear segment structure, and each conductive segment of the element layer is parallel to each other.

一種電磁換能器,其包括至少一個用於產生一個驅動磁場的磁性元件以及如上所述的微電磁元件;所述微電磁元件活動設置於驅動磁場中;當微電磁元件的各導電段通入電流時,微電磁元件會與磁性元件產生的驅動磁場相互作用而使得微電磁元件運動。 An electromagnetic transducer, which includes at least one magnetic element for generating a driving magnetic field and a micro-electromagnetic element as described above; the micro-electromagnetic element is movably arranged in the driving magnetic field; when each conductive section of the micro-electromagnetic element passes through When electric current is applied, the micro-electromagnetic element will interact with the driving magnetic field generated by the magnetic element to cause the micro-electromagnetic element to move.

所述磁性元件的數量為兩個,兩個磁性元件分為第一磁性元件和第二磁性元件;第一磁性元件和第二磁性元件相對設置,使得第一磁性元件和第二磁性元件之間產生的驅動磁場為平行磁場。 The number of the magnetic elements is two, and the two magnetic elements are divided into a first magnetic element and a second magnetic element; the first magnetic element and the second magnetic element are arranged oppositely, so that there is a gap between the first magnetic element and the second magnetic element. The generated driving magnetic field is a parallel magnetic field.

所述微電磁元件的部分或全部導電段的通電電流方向與驅動磁場的磁場方向相交設置。 The energizing current direction of part or all of the conductive segments of the micro-electromagnetic element is arranged to intersect with the magnetic field direction of the driving magnetic field.

所述微電磁元件的各導電段的通電電流方向相同,且所述微電磁元件的各導電段的通電電流方向與驅動磁場的磁場方向垂直設置。 The current direction of each conductive segment of the micro-electromagnetic element is the same, and the direction of the current of each conductive segment of the micro-electromagnetic element is perpendicular to the direction of the magnetic field of the driving magnetic field.

所述的電磁換能器還包括殼體;所述磁性元件設置於殼體內側;所述微電磁元件活動設置於殼體中。 The electromagnetic transducer also includes a shell; the magnetic element is arranged inside the shell; and the micro-electromagnetic element is movably arranged in the shell.

所述殼體的材質為導磁材質。 The housing is made of magnetically permeable material.

一種電子裝置,其包括如上所述的電磁換能器。 An electronic device includes the electromagnetic transducer as described above.

採用上述方案後,本新型的微電磁元件可以代替現有的線圈元件使用,而本新型的微電磁元件呈片狀結構,這樣本新型的微電磁元件與磁性元件相互配合時,磁性元件是處於微電磁元件側方,這樣在微電磁元件和磁性元件相互作用時只需考慮在一個方向的間隙設置,從而有助於將微電磁元件和磁性元件之間的間隙做小,進而有助於使得微電磁元件與磁性元件之間的相互作用力大,同時也有助於將微電磁元件的體積做小;另外本新型的微電磁元件與磁性元件相互配合時磁性元件是處於微電磁元件側方,這樣微電磁元件和磁性元件之間的安裝制約小,使得微電磁元件和磁性元件各自的尺寸都可獨立做大,進而有助於使得微電磁元件與磁性元件之間的相互作用力大。 After adopting the above solution, the new micro-electromagnetic element can be used instead of the existing coil element, and the new micro-electromagnetic element has a sheet structure. In this way, when the new micro-electromagnetic element and the magnetic element cooperate with each other, the magnetic element is in a micron state. side of the electromagnetic element, so that when the micro-electromagnetic element and the magnetic element interact, only the gap setting in one direction needs to be considered, which helps to reduce the gap between the micro-electromagnetic element and the magnetic element, which in turn helps to make the micro-electromagnetic element The interaction force between the electromagnetic element and the magnetic element is large, which also helps to reduce the size of the micro-electromagnetic element; in addition, when the micro-electromagnetic element and the magnetic element of the present invention cooperate with each other, the magnetic element is located on the side of the micro-electromagnetic element, so that The installation constraints between the micro-electromagnetic elements and the magnetic elements are small, so that the sizes of the micro-electromagnetic elements and the magnetic elements can be independently increased, which in turn helps to increase the interaction force between the micro-electromagnetic elements and the magnetic elements.

為使能更進一步瞭解本新型的特徵及技術內容,請參閱以下有關本新型的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本新型加以限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not used to limit the present invention.

S:微型揚聲器 S: micro speaker

S1:振膜 S1: diaphragm

T:電磁換能器 T: electromagnetic transducer

T1:第一磁性元件 T1: First magnetic element

T2:第二磁性元件 T2: Second magnetic element

T3:殼體 T3: Shell

C:微電磁元件 C: Micro electromagnetic components

1:元件層 1: Component layer

11:基片 11:Substrate

12:導電段 12: Conductive section

120:微線段區域 120: Micro line segment area

13:正導電端 13: Positive conductive end

131:正導電孔 131:Positive conductive hole

14:負導電端 14: Negative conductive terminal

141:負導電孔 141: Negative conductive hole

15:導磁體 15: Magnetic conductor

圖1為本新型的微電磁元件的實施例一的結構示意圖;圖2為本新型的微電磁元件的實施例二的結構示意圖;圖3為本新型的微電磁元件的實施例三的結構示意圖;圖4為本新型的微電磁元件的實施例四的結構示意圖;圖5為本新型的微電磁元件的實施例五的結構示意圖;圖6為本新型的微電磁元件的實施例六的結構分解圖;圖7為本新型的微電磁元件的實施例七的結構示意圖;圖8為本新型的電磁換能器的原理圖;以及 圖9為本新型的電子裝置的結構示意圖。 Figure 1 is a schematic structural diagram of Embodiment 1 of the new micro-electromagnetic element; Figure 2 is a schematic structural diagram of Embodiment 2 of the new micro-electromagnetic element; Figure 3 is a schematic structural diagram of Embodiment 3 of the new micro-electromagnetic element. ; Figure 4 is a schematic structural diagram of Embodiment 4 of the new micro-electromagnetic element; Figure 5 is a schematic structural diagram of Embodiment 5 of the micro-electromagnetic element of the present invention; Figure 6 is a structural schematic diagram of Embodiment 6 of the micro-electromagnetic element of the present invention. Exploded view; Figure 7 is a schematic structural diagram of Embodiment 7 of the new micro-electromagnetic element; Figure 8 is a schematic diagram of the new electromagnetic transducer; and Figure 9 is a schematic structural diagram of the new electronic device of the present invention.

以下是通過特定的具體實施例來說明本創作的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本創作的優點與效果。本創作可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本創作的構思下進行各種修改與變更。另外,本創作的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本創作的相關技術內容,但所公開的內容並非用以限制本創作的保護範圍。 The following is a specific embodiment to illustrate the implementation of the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this description can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. In addition, the accompanying drawings of this creation are only simple illustrations and are not depictions based on actual size, as stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of protection of the present invention.

應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 It should be understood that although terms such as “first”, “second” and “third” may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another component or one signal from another signal. In addition, the term "or" used in this article shall include any one or combination of more of the associated listed items depending on the actual situation.

為了進一步解釋本新型的技術方案,下面通過具體實施例來對本新型進行詳細闡述。 In order to further explain the technical solution of the present invention, the present invention will be described in detail below through specific embodiments.

如圖1至圖7所示,本新型揭示了一種微電磁元件C,其包括至少一層元件層1;所述元件層1包括一基片11以及設置於基片11正面的多個導電段12,相鄰導電段12之間具有間隙;其中當微電磁元件C的元件層1的數量為至少兩層以上時,各元件層1相互疊合,且各元件層1的導電段12無交叉。本新型的元件層1的導電段12可以採用鍍層、金屬化制程、以及顯影和蝕刻等半導體工藝來進行製造,使得導電段12的製造精度高,導電段12的線寬和相互之間的間隙可以做得很小,從而可以在更小的基片11上設置更多的導電段 12,使得微電磁元件C的尺寸小;本新型的元件層1的導電段12也可以採用印刷電路板(PCB)製造工藝製成;而元件層1的基片11的材質可為矽、陶瓷、玻璃、藍寶石、雷射直接成型(LDS)塑膠、鍺、砷化鎵、磷化銦、氮化鎵、碳化矽、雙馬來醯亞胺-三氮雜苯(Bismaleimide Triazine,BT)、味之素建構膜(Ajinomoto Build-up film,ABF)、電木板、玻璃纖維、塑膠或硒化鋅中的一種。當本新型以矽晶圓、鍺晶圓、氮化鎵、第二代半導體、第三代半導體為主結構、或者以化學氣象沉積製程來加工元件層1時,元件層1厚度要求為0.0001~20微米,且導電段12的線寬比線距的比值大於0.3。而當本新型以印刷電路板、IC載板、玻璃載板為主結構或以修改版半加成法(Modified Semi-Additive Processes,MSAP)、半加成法(Semi-Additive Processes,SAP)、厚銅製程或減法(tenting)製程來加工元件層1時,元件層1厚度要求為0.1~80微米,且導電段12的線寬比線距的比值大於0.3。 As shown in Figures 1 to 7, the present invention discloses a micro-electromagnetic element C, which includes at least one element layer 1; the element layer 1 includes a substrate 11 and a plurality of conductive segments 12 provided on the front side of the substrate 11 , there is a gap between adjacent conductive segments 12; when the number of element layers 1 of the microelectromagnetic element C is at least two, the element layers 1 are overlapped with each other, and the conductive segments 12 of each element layer 1 do not intersect. The conductive segments 12 of the element layer 1 of the present invention can be manufactured using semiconductor processes such as plating, metallization, development and etching, so that the manufacturing accuracy of the conductive segments 12 is high, and the line widths and gaps between the conductive segments 12 are high. Can be made very small, so that more conductive segments can be provided on a smaller substrate 11 12, making the size of the micro-electromagnetic element C small; the conductive section 12 of the element layer 1 of the present invention can also be made using a printed circuit board (PCB) manufacturing process; and the material of the substrate 11 of the element layer 1 can be silicon or ceramics. , glass, sapphire, laser direct structuring (LDS) plastic, germanium, gallium arsenide, indium phosphide, gallium nitride, silicon carbide, bismaleimide triazine (BT), flavor One of Ajinomoto Build-up film (ABF), bakelite, fiberglass, plastic or zinc selenide. When this new type uses silicon wafer, germanium wafer, gallium nitride, second-generation semiconductor, third-generation semiconductor as the main structure, or uses chemical vapor deposition process to process the element layer 1, the thickness of the element layer 1 is required to be 0.0001~ 20 microns, and the ratio of the line width to the line spacing of the conductive segment 12 is greater than 0.3. And when this new type is based on printed circuit board, IC carrier board, glass carrier board or modified version of semi-additive process (Modified Semi-Additive Processes, MSAP), semi-additive process (Semi-Additive Processes, SAP), When processing the component layer 1 using a thick copper process or a tenting process, the thickness of the component layer 1 is required to be 0.1 to 80 microns, and the ratio of the line width to the line spacing of the conductive segment 12 is greater than 0.3.

配合圖1所示,在本新型的微電磁元件C的實施例一中,所述元件層1的各個導電段12呈直線段結構,且元件層1的各個導電段12相互平行,這樣設置可以使得元件層1的各個導電段12的通電電流方向相同,使得微電磁元件C受到磁場的作用力大,減少不必要的能量損耗;所述元件層1的各導電段12可以等間距設置,其中導電段12的線寬和相鄰導電段12之間的間距為微米級,導電段12的線長則可為毫米級別,這樣微電磁元件C的尺寸小;配合圖1所示,在本新型的微電磁元件C的實施例一中,其中所述元件層1還包括設置於基片11正面上的正導電端13和負導電端14,元件層1的全部導電段12的第一端與元件層1的正導電端13連接,元件層1的全部導電段12的第二端與元件層1的負導電端14連接;該正導電端13和負導電端14用於接入外部電源的正、負極以及用於將各元件層1的導電段12進行電性連接,這樣通過設置正導電端13和負導電端14以便於將元件層1的各導電段12同時接入電流;正導電端13和負 導電端14可分別設有正導電孔131和負導電孔141以用於接入外部電流。需要說明的是,本新型也可以是元件層1的部分導電段12的第一端與元件層1的正導電端13連接,元件層1的部分導電段12的第二端與元件層1的負導電端14連接,這樣也能便於導電段12通過正導電端13和負導電端14接入外部電流。 As shown in Figure 1, in the first embodiment of the new micro-electromagnetic element C, each conductive segment 12 of the element layer 1 has a straight-line segment structure, and each conductive segment 12 of the element layer 1 is parallel to each other. This arrangement can The direction of the energizing current of each conductive section 12 of the element layer 1 is the same, so that the micro-electromagnetic element C is strongly affected by the magnetic field and reduces unnecessary energy loss; each conductive section 12 of the element layer 1 can be arranged at equal intervals, where The line width of the conductive segment 12 and the spacing between adjacent conductive segments 12 are on the micron level, and the line length of the conductive segment 12 can be on the millimeter level, so that the size of the microelectromagnetic component C is small; as shown in Figure 1, in the present invention In the first embodiment of the micro-electromagnetic element C, the element layer 1 also includes a positive conductive end 13 and a negative conductive end 14 disposed on the front surface of the substrate 11, and the first ends of all conductive sections 12 of the element layer 1 are connected to The positive conductive end 13 of the element layer 1 is connected, and the second end of all the conductive sections 12 of the element layer 1 is connected to the negative conductive end 14 of the element layer 1; the positive conductive end 13 and the negative conductive end 14 are used to connect to the external power supply. The positive and negative electrodes are used to electrically connect the conductive segments 12 of each element layer 1, so that each conductive segment 12 of the element layer 1 can be connected to current at the same time by setting the positive conductive end 13 and the negative conductive end 14; positive conductivity terminal 13 and negative The conductive end 14 may be respectively provided with positive conductive holes 131 and negative conductive holes 141 for connecting external current. It should be noted that in the present invention, the first end of the partial conductive section 12 of the element layer 1 can also be connected to the positive conductive end 13 of the element layer 1 , and the second end of the partial conductive section 12 of the element layer 1 can be connected to the positive conductive end 13 of the element layer 1 . The negative conductive end 14 is connected, which also facilitates the conductive section 12 to receive external current through the positive conductive end 13 and the negative conductive end 14 .

配合圖2所示,在本新型的微電磁元件C的實施例二中,所述元件層1的各個導電段12也呈直線段結構,所述元件層1的導電段12劃分為至少兩個微線段區域120,每個微線段區域120具有多個導電段12,且相鄰微線段區域120之間形成間隔;其中導電段12的線寬為微米級,導電段12的線長為毫米級,每個微線段區域120的各導電段12之間的間距為微米級,這樣微電磁元件C的尺寸小;配合圖2所示,在本新型的微電磁元件C的實施例二中,所述元件層1還包括數量與微線段區域120相同的正導電端13和負導電端14,元件層1的各個正導電端13和負導電端14設置於該元件層1的基片11正面,元件層1的每個微線段區域120與元件層1的一個正導電端13和一個負導電端14對應設置;其中,每個微線段區域120的全部導電段12的第一端與該微線段區域120對應的正導電端13連接,每個微線段區域120的全部導電段12的第二端與該微線段區域120對應的負導電端14連接;這樣在本新型的微電磁元件C的實施例二中,通過正導電端13和負導電端14能便於微線段區域120的各導電段12同時接入電流;同樣的,所述正導電端13和負導電端14分別設有正導電孔131和負導電孔141以用於接入外部電流。需要說明的是,本新型也可以是每個微線段區域120的部分導電段12的第一端與該微線段區域120對應的正導電端13連接,每個微線段區域120的部分導電段12的第二端與該微線段區域120對應的負導電端14連接,這樣也能便於微線段區域120的部分導電段12通過正導電端13和負導電端14接入外部電流。 As shown in Figure 2, in the second embodiment of the new micro-electromagnetic element C, each conductive section 12 of the element layer 1 also has a straight-line segment structure, and the conductive section 12 of the element layer 1 is divided into at least two Micro-segment regions 120. Each micro-segment region 120 has multiple conductive segments 12, and intervals are formed between adjacent micro-segment regions 120; the line width of the conductive segments 12 is on the micron level, and the line length of the conductive segments 12 is on the millimeter level. , the spacing between the conductive segments 12 of each micro line segment area 120 is micron level, so the size of the micro electromagnetic element C is small; as shown in Figure 2, in the second embodiment of the new micro electromagnetic element C, so The element layer 1 also includes the same number of positive conductive terminals 13 and negative conductive terminals 14 as the micro-segment area 120. Each of the positive conductive terminals 13 and negative conductive terminals 14 of the element layer 1 is disposed on the front surface of the substrate 11 of the element layer 1. Each micro-line segment area 120 of the element layer 1 is arranged corresponding to a positive conductive end 13 and a negative conductive end 14 of the element layer 1; wherein, the first end of all the conductive segments 12 of each micro-line segment area 120 is connected to the micro-line segment. The positive conductive end 13 corresponding to the area 120 is connected, and the second end of all the conductive segments 12 of each micro line segment area 120 is connected to the negative conductive end 14 corresponding to the micro line segment area 120; in this way, in the implementation of the new micro electromagnetic element C In the second example, the positive conductive end 13 and the negative conductive end 14 can facilitate the simultaneous access of each conductive segment 12 of the micro line segment area 120 to current; similarly, the positive conductive end 13 and the negative conductive end 14 are respectively provided with positive conductive holes. 131 and negative conductive hole 141 for accessing external current. It should be noted that in the present invention, the first end of the partial conductive segment 12 of each micro line segment region 120 can be connected to the corresponding positive conductive end 13 of the micro line segment region 120, and the partial conductive segment 12 of each micro line segment region 120 can be connected to the corresponding positive conductive end 13 of the micro segment region 120. The second end is connected to the corresponding negative conductive end 14 of the micro line segment region 120, which also facilitates the partial conductive segments 12 of the micro line segment region 120 to receive external current through the positive conductive end 13 and the negative conductive end 14.

配合圖3至圖5所示,在本新型的微電磁元件C的實施例三、實 施例四和實施例五中,所述元件層1的各個導電段12的形狀可不盡相同,導電段12可呈直線段結構、斜線段結構、折線段結構、曲線段結構等結構,各個導電段12不要求相互平行。需要說明的是,本新型的微電磁元件C的形狀和佈局可多種多樣,只要微電磁元件C的導電段12通入電流時,各導電段12在外加磁場作用下能受到相同方向的作用力即可,這樣微電磁元件C便能在外加磁場作用下運動。 As shown in Figures 3 to 5, in the third embodiment of the new micro-electromagnetic element C, the actual In Embodiment 4 and Embodiment 5, the shape of each conductive segment 12 of the element layer 1 may be different. The conductive segment 12 may have a straight line segment structure, a diagonal segment structure, a broken line segment structure, a curved segment structure, or other structures. Each conductive segment 12 may have a different shape. Segments 12 are not required to be parallel to each other. It should be noted that the shape and layout of the micro-electromagnetic element C of the present invention can be various. As long as the conductive sections 12 of the micro-electromagnetic element C are supplied with current, each conductive section 12 can receive a force in the same direction under the action of an external magnetic field. That's it, so that the micro-electromagnetic element C can move under the action of an external magnetic field.

配合圖6所示,在本新型的微電磁元件C的實施例六中,所述元件層1的各個導電段12呈直線段結構,且元件層1的各個導電段12相互平行,這樣設置可以使得元件層1的各個導電段12的通電電流方向相同,使得微電磁元件C受到磁場的作用力大,減少不必要的能量損耗;所述元件層1的各導電段12可以等間距設置,其中導電段12的線寬和相鄰導電段12之間的間距為微米級,導電段12的線長則可為毫米級別,這樣微電磁元件C的尺寸小。配合圖6所示,在本新型的微電磁元件C的實施例六中,當所述元件層1的數量為至少兩層以上時,某個元件層1的部分或全部的導電段12的第一端與該元件層相鄰的元件層1的基片11上設置的正導電端13連接,且該元件層1的部分或全部的導電段12的第二端與該元件層1相鄰的元件層1的基片上設置的負導電端14連接;本新型如此設置,可以便於將某個元件層1的各個導電段12進行串聯和/或並聯的連接,使得元件層1的各個導電段12可以同時接入電流。 As shown in Figure 6, in the sixth embodiment of the new micro-electromagnetic element C, each conductive segment 12 of the element layer 1 has a straight-line segment structure, and each conductive segment 12 of the element layer 1 is parallel to each other. This arrangement can The direction of the energizing current of each conductive section 12 of the element layer 1 is the same, so that the micro-electromagnetic element C is strongly affected by the magnetic field and reduces unnecessary energy loss; each conductive section 12 of the element layer 1 can be arranged at equal intervals, where The line width of the conductive segments 12 and the spacing between adjacent conductive segments 12 are on the micron level, and the line length of the conductive segments 12 can be on the millimeter level, so that the size of the microelectromagnetic element C is small. As shown in FIG. 6 , in the sixth embodiment of the new microelectromagnetic element C, when the number of the element layers 1 is at least two or more, the third conductive section 12 of part or all of a certain element layer 1 One end is connected to the positive conductive end 13 provided on the substrate 11 of the element layer 1 adjacent to the element layer, and the second end of part or all of the conductive section 12 of the element layer 1 is adjacent to the element layer 1 The negative conductive end 14 provided on the substrate of the element layer 1 is connected; the arrangement of the present invention can facilitate the series and/or parallel connection of each conductive section 12 of a certain element layer 1, so that each conductive section 12 of the element layer 1 Current can be connected at the same time.

配合圖7所示,在本新型的微電磁元件C的實施例七中,所述微電磁元件C的至少一層元件層1的基片11設置有導磁體15,在微電磁元件C通電時,導磁體15可減少微電磁元件C的磁阻和強化微電磁元件C產生的磁場的磁力線,從而提高微電磁元件C產生的磁場的強度。 As shown in Figure 7, in the seventh embodiment of the new micro-electromagnetic element C, the substrate 11 of at least one element layer 1 of the micro-electromagnetic element C is provided with a magnetic conductor 15. When the micro-electromagnetic element C is energized, The magnetic conductor 15 can reduce the magnetic resistance of the micro-electromagnetic element C and strengthen the magnetic field lines of the magnetic field generated by the micro-electromagnetic element C, thereby increasing the intensity of the magnetic field generated by the micro-electromagnetic element C.

在本新型中,當所述微電磁元件C的元件層1的數量為至少兩層以上時,相鄰元件層1的正導電端13和負導電端14可相互連接,進而相鄰元件 層1實現並聯或串聯,使得各元件層1的導電段12可同時接入電流。本新型當微電磁元件C的各元件層1的導電段12接入電流時,微電磁元件C可與外加磁場產生作用,使得微電磁元件C受到安培力而使得微電磁元件C運動。 In the present invention, when the number of element layers 1 of the micro-electromagnetic element C is at least two, the positive conductive ends 13 and the negative conductive ends 14 of adjacent element layers 1 can be connected to each other, and then the adjacent elements Layer 1 is connected in parallel or in series, so that the conductive segments 12 of each element layer 1 can receive current at the same time. In the present invention, when the conductive section 12 of each element layer 1 of the micro-electromagnetic element C is connected to a current, the micro-electromagnetic element C can interact with an external magnetic field, so that the micro-electromagnetic element C is subjected to ampere force and causes the micro-electromagnetic element C to move.

在本新型中,本新型的微電磁元件C包括至少一層元件層1而使得微電磁元件C整體呈片狀結構,這樣本新型的微電磁元件C與磁性元件相互配合時,磁性元件是處於微電磁元件C側方,這樣在避免微電磁元件C和磁性元件相互作用時只需考慮在一個方向的間隙設置,從而有助於將微電磁元件C和磁性元件之間的間隙做小,進而有助於使得微電磁元件C與磁性元件之間的相互作用力大,同時也有助於將微電磁元件C的體積做小;另外本新型的微電磁元件C與磁性元件相互配合時磁性元件是處於微電磁元件側方,這樣微電磁元件C和磁性元件之間的安裝制約小,使得微電磁元件C和磁性元件各自的尺寸都可獨立做大,進而有助於使得微電磁元件C與磁性元件之間的相互作用力大。 In the present invention, the micro-electromagnetic element C of the invention includes at least one element layer 1 so that the micro-electromagnetic element C has a sheet-like structure as a whole. In this way, when the micro-electromagnetic element C of the invention cooperates with the magnetic element, the magnetic element is in a micro-structure. side of the electromagnetic element C, so that when avoiding the interaction between the micro-electromagnetic element C and the magnetic element, only the gap setting in one direction needs to be considered, which helps to reduce the gap between the micro-electromagnetic element C and the magnetic element, and thereby has It helps to make the interaction force between the micro-electromagnetic element C and the magnetic element large, and also helps to reduce the size of the micro-electromagnetic element C; in addition, when the new micro-electromagnetic element C and the magnetic element cooperate with each other, the magnetic element is in side of the micro-electromagnetic element, so that the installation constraints between the micro-electromagnetic element C and the magnetic element are small, so that the sizes of the micro-electromagnetic element C and the magnetic element can be independently increased, which in turn helps to make the micro-electromagnetic element C and the magnetic element The interaction between them is large.

配合圖8所示,本新型還揭示了一種電磁換能器T,其包括至少一個用於產生驅動磁場的磁性元件以及上述的微電磁元件C;其中磁性元件的數量可為兩個,兩個磁性元件分為第一磁性元件T1和第二磁性元件T2,第一磁性元件T1和第二磁性元件T2之間產生一個驅動磁場;所述微電磁元件C則活動設置於第一磁性元件T1和第二磁性元件T2之間,以使得微電磁元件C活動設置於驅動磁場中。 As shown in Figure 8, the present invention also discloses an electromagnetic transducer T, which includes at least one magnetic element for generating a driving magnetic field and the above-mentioned micro-electromagnetic element C; the number of magnetic elements can be two, two The magnetic element is divided into a first magnetic element T1 and a second magnetic element T2. A driving magnetic field is generated between the first magnetic element T1 and the second magnetic element T2; the micro-electromagnetic element C is movablely arranged between the first magnetic element T1 and the second magnetic element T2. between the second magnetic elements T2, so that the micro-electromagnetic element C is movable and disposed in the driving magnetic field.

配合圖8所示,本新型當微電磁元件C的各導電段12通入電流時,微電磁元件C會與驅動磁場相互作用而使得微電磁元件C運動。其中當微電磁元件C的各導電段12通入正向電流或反向電流時,驅動磁場對微電磁元件C進行作用,使得微電磁元件C受到垂直於電流方向和驅動磁場的磁場方向的安培力,該安培力便驅動微電磁元件C動作,該安培力滿足公式:F=ΣB‧I‧L; 其中F為安培力,B為驅動磁場的磁場強度,I為導電段12的電流,L為導電段12的線長;其中當導電段12的電流方向改變時,安培力的方向也隨之相應改變,這樣導電段12的電流方向反復以相反方向改變(如導電段12的電流為交流電)時,微電磁元件C便進行往復運動。在本新型中,所述導電段12的通電電流方向與驅動磁場的磁場方向相交設置,這樣微電磁元件C收到驅動磁場的作用而運動;作為優選,所述微電磁元件C的各導電段12的通電電流方向相同,且所述微電磁元件C的各導電段12的通電電流方向與驅動磁場的磁場方向垂直設置,這樣設置能使得微電磁元件C受到的安倍力最大,使得微電磁元件C與磁性元件之間的相互作用力大。所述第一磁性元件T1和第二磁性元件T2可相對設置而使得驅動磁場為平行磁場,這樣也有助於使得微電磁元件C與磁性元件之間的相互作用力大。 As shown in FIG. 8 , in the present invention, when each conductive section 12 of the micro-electromagnetic element C is supplied with current, the micro-electromagnetic element C will interact with the driving magnetic field to cause the micro-electromagnetic element C to move. When each conductive section 12 of the micro-electromagnetic element C is supplied with a forward current or a reverse current, the driving magnetic field acts on the micro-electromagnetic element C, so that the micro-electromagnetic element C is subjected to an ampere perpendicular to the direction of the current and the direction of the magnetic field of the driving magnetic field. Force, this Ampere force drives the micro-electromagnetic element C to move, and this Ampere force satisfies the formula: F=ΣB‧I‧L; Where F is the Ampere force, B is the magnetic field strength of the driving magnetic field, I is the current of the conductive section 12, and L is the line length of the conductive section 12; when the direction of the current of the conductive section 12 changes, the direction of the Ampere force also changes accordingly. Change, so that when the current direction of the conductive section 12 repeatedly changes in the opposite direction (for example, the current of the conductive section 12 is alternating current), the micro-electromagnetic element C will reciprocate. In the present invention, the direction of the energizing current of the conductive section 12 intersects the direction of the magnetic field of the driving magnetic field, so that the micro-electromagnetic element C moves under the action of the driving magnetic field; preferably, each conductive section of the micro-electromagnetic element C The direction of the energizing current of each conductive section 12 of the micro-electromagnetic element C is the same, and the direction of the energizing current of each conductive section 12 of the micro-electromagnetic element C is set perpendicularly to the direction of the magnetic field of the driving magnetic field. This arrangement can maximize the Ampere force experienced by the micro-electromagnetic element C, so that the micro-electromagnetic element C The interaction force between C and magnetic components is large. The first magnetic element T1 and the second magnetic element T2 can be arranged oppositely so that the driving magnetic field is a parallel magnetic field, which also helps to increase the interaction force between the micro-electromagnetic element C and the magnetic element.

配合圖8所示,本新型的電磁換能器T還可包括殼體T3,殼體T3用於承載第一磁性元件T1、第二磁性元件T2和微電磁元件C;其中第一磁性元件T1和第二磁性元件T2分別設置於殼體T3內相對的兩側,即本新型的電磁換能器T的磁性元件設置於殼體T3內側,而微電磁元件C活動設置於殼體T3中。所述殼體T3的材質可以為導磁材質,這樣通過選用不同磁導率的導磁材料可以調整殼體T3內的磁化程度,進而使得有助於使得微電磁元件C與磁性元件之間的相互作用力大。 As shown in Figure 8, the new electromagnetic transducer T of the present invention may also include a housing T3, which is used to carry the first magnetic element T1, the second magnetic element T2 and the micro-electromagnetic element C; wherein the first magnetic element T1 The second magnetic element T2 and the second magnetic element T2 are respectively arranged on opposite sides of the housing T3. That is, the magnetic element of the new electromagnetic transducer T is arranged inside the housing T3, and the micro-electromagnetic element C is movably arranged in the housing T3. The material of the housing T3 can be a magnetically permeable material. In this way, the degree of magnetization in the housing T3 can be adjusted by selecting magnetically permeable materials with different magnetic permeabilities, which in turn helps to improve the connection between the microelectromagnetic element C and the magnetic element. The interaction force is strong.

本新型還揭示了一種電子裝置,該電子裝置包括上述的電磁換能器T;配合圖9所示,所述電子裝置可為微型揚聲器S,微型揚聲器S具體包括振膜S1以及上述的電磁換能器T,其中所述振膜S1與電磁換能器T的微電磁元件C結合,微電磁元件C運動時會帶動振膜S1運動,從而進而發聲;其中可以通過控制微電磁元件C的導電段12的通電電流大小和方向來控制振膜S1振動的大小和方向,從而改變聲音的頻率高低、音量的大小。需要說明的是, 所述電子裝置還可以是微型馬達,即本新型的電磁換能器T還能應用到微型馬達中,該微型馬達可以為線性馬達或轉子馬達。 The present invention also discloses an electronic device, which includes the above-mentioned electromagnetic transducer T; as shown in FIG. 9 , the electronic device can be a micro-speaker S. The micro-speaker S specifically includes a diaphragm S1 and the above-mentioned electromagnetic transducer. transducer T, in which the diaphragm S1 is combined with the micro-electromagnetic element C of the electromagnetic transducer T. When the micro-electromagnetic element C moves, it will drive the diaphragm S1 to move, thereby producing sound; wherein the conductivity of the micro-electromagnetic element C can be controlled The size and direction of the energizing current in segment 12 control the size and direction of the vibration of diaphragm S1, thereby changing the frequency and volume of the sound. It should be noted that, The electronic device can also be a micro motor, that is, the new electromagnetic transducer T can also be applied to a micro motor, and the micro motor can be a linear motor or a rotor motor.

以上所公開的內容僅為本新型的優選可行實施例,並非因此侷限本新型的申請專利範圍,所以凡是運用本新型說明書及圖式內容所做的等效技術變化,均包含於本新型的申請專利範圍內。 The contents disclosed above are only the preferred and feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

C:微電磁元件 C: Micro electromagnetic components

1:元件層 1: Component layer

11:基片 11:Substrate

12:導電段 12: Conductive section

13:正導電端 13: Positive conductive end

131:正導電孔 131:Positive conductive hole

14:負導電端 14: Negative conductive terminal

141:負導電孔 141: Negative conductive hole

Claims (16)

一種微電磁元件,包括: 至少一元件層; 其中,所述各元件層包括一基片以及設置於該基片正面的多個導電段,其中相鄰的該多個導電段之間具有間隙; 其中,當所述元件層的數量為至少兩層以上時,多層的該元件層相互疊合,且各元件層的導電段無交叉。 A micro-electromagnetic component including: at least one component layer; Wherein, each component layer includes a substrate and a plurality of conductive segments disposed on the front surface of the substrate, wherein there are gaps between adjacent conductive segments; Wherein, when the number of the element layers is at least two or more, the multiple element layers are superimposed on each other, and the conductive segments of each element layer do not intersect. 如請求項1所述的微電磁元件,其中,所述元件層還包括設置於該基片正面上的一正導電端和一負導電端,該元件層的部分或全部的導電段的一第一端與該元件層的該正導電端連接,該元件層的部分或全部的導電段的一第二端與該元件層的該負導電端連接。The microelectromagnetic element according to claim 1, wherein the element layer further includes a positive conductive end and a negative conductive end disposed on the front surface of the substrate, and a first conductive section of part or all of the element layer One end is connected to the positive conductive end of the element layer, and a second end of part or all of the conductive segments of the element layer is connected to the negative conductive end of the element layer. 如請求項1所述的微電磁元件,其中,所述元件層的導電段劃分為至少兩個微線段區域,每個微線段區域具有多個導電段,且相鄰微線段區域之間形成間隔; 其中,所述元件層還包括數量與該至少兩個微線段區域相同的一正導電端和一負導電端,該元件層的各個正導電端和負導電端設置於該元件層的該基片正面,該元件層的每個微線段區域與該元件層的該正導電端和該負導電端對應設置; 其中,每個微線段區域的部分或全部的導電段的一第一端與該微線段區域對應的該正導電端連接,每個微線段區域的部分或全部的導電段的一第二端與該微線段區域對應的該負導電端連接。 The micro-electromagnetic element according to claim 1, wherein the conductive segments of the element layer are divided into at least two micro-segment regions, each micro-segment region has multiple conductive segments, and gaps are formed between adjacent micro-segment regions. ; Wherein, the component layer also includes a positive conductive terminal and a negative conductive terminal with the same number as the at least two micro-line segment areas, and each positive conductive terminal and negative conductive terminal of the component layer are disposed on the substrate of the component layer On the front side, each micro-line segment area of the element layer is arranged corresponding to the positive conductive end and the negative conductive end of the element layer; Wherein, a first end of part or all of the conductive segments in each micro line segment area is connected to the positive conductive end corresponding to the micro line segment area, and a second end of part or all of the conductive segments in each micro line segment area is connected to The negative conductive end corresponding to the micro line segment area is connected. 如請求項1所述的微電磁元件,其特徵在於:當所述元件層的數量為至少兩層以上時,某個元件層的部分或全部的導電段的一第一端與該元件層相鄰的元件層的一基片上設置的一正導電端連接,且該元件層的部分或全部的導電段的一第二端與該元件層相鄰的元件層的基片上設置的一負導電端連接。The microelectromagnetic element according to claim 1, characterized in that when the number of the element layers is at least two or more, a first end of part or all of the conductive segments of a certain element layer is in contact with the element layer. A positive conductive terminal provided on a substrate of an adjacent component layer is connected, and a second end of part or all of the conductive segments of the component layer is connected to a negative conductive terminal provided on a substrate of the component layer adjacent to the component layer connection. 如請求項2至4中之任一項所述的微電磁元件,其中該正導電端和該負導電端分別設有一正導電孔和一負導電孔。The microelectromagnetic component according to any one of claims 2 to 4, wherein the positive conductive end and the negative conductive end are respectively provided with a positive conductive hole and a negative conductive hole. 如請求項2至4中之任一項所述的微電磁元件,其中,當所述元件層的數量為至少兩層以上時,相鄰元件層的該正導電端和該負導電端相互連接而使得相鄰元件層實現串聯或並聯。The microelectromagnetic element according to any one of claims 2 to 4, wherein when the number of the element layers is at least two or more, the positive conductive end and the negative conductive end of adjacent element layers are connected to each other. This enables adjacent component layers to be connected in series or parallel. 如請求項1所述的微電磁元件,其中該至少一層元件層的基片設置有導磁體。The microelectromagnetic element according to claim 1, wherein the substrate of the at least one element layer is provided with a magnetic conductor. 如請求項1或7所述的微電磁元件,其中所述元件層的該基片的材質為矽、陶瓷、玻璃、藍寶石、雷射直接成型塑膠、鍺、砷化鎵、磷化銦、氮化鎵、碳化矽、雙馬來醯亞胺-三氮雜苯(BT)、味之素建構膜(ABF)、電木板、玻璃纖維、塑膠或硒化鋅中的一種。The microelectromagnetic element according to claim 1 or 7, wherein the material of the substrate of the element layer is silicon, ceramic, glass, sapphire, laser direct forming plastic, germanium, gallium arsenide, indium phosphide, nitrogen One of gallium, silicon carbide, bismaleimide-triazine (BT), Ajinomoto structural film (ABF), bakelite, glass fiber, plastic or zinc selenide. 如請求項1或7所述的微電磁元件,其中所述元件層的各個導電段呈直線段結構,且各元件層的該多個導電段相互平行。The microelectromagnetic element according to claim 1 or 7, wherein each conductive segment of the element layer has a linear segment structure, and the plurality of conductive segments of each element layer are parallel to each other. 一種電磁換能器,包括至少一個用於產生一驅動磁場的磁性元件以及如請求項1所述的微電磁元件;所述微電磁元件活動設置於該驅動磁場中;當該微電磁元件的各導電段通入電流時,該微電磁元件會與該磁性元件產生的該驅動磁場相互作用而使得該微電磁元件運動。An electromagnetic transducer, including at least one magnetic element for generating a driving magnetic field and the micro-electromagnetic element as described in claim 1; the micro-electromagnetic element is movably arranged in the driving magnetic field; when each of the micro-electromagnetic elements When a current flows through the conductive section, the micro-electromagnetic element will interact with the driving magnetic field generated by the magnetic element to cause the micro-electromagnetic element to move. 如請求項10所述的電磁換能器,其中所述磁性元件的數量為兩個,該兩個磁性元件分為一第一磁性元件和一第二磁性元件;其中該第一磁性元件和該第二磁性元件相對設置,使得該第一磁性元件和該第二磁性元件之間產生的該驅動磁場為一平行磁場。The electromagnetic transducer according to claim 10, wherein the number of the magnetic elements is two, and the two magnetic elements are divided into a first magnetic element and a second magnetic element; wherein the first magnetic element and the The second magnetic element is arranged oppositely, so that the driving magnetic field generated between the first magnetic element and the second magnetic element is a parallel magnetic field. 如請求項10或11所述的電磁換能器,其中,所述微電磁元件的部分或全部導電段的通電電流方向與該驅動磁場的磁場方向相交設置。The electromagnetic transducer according to claim 10 or 11, wherein the energizing current direction of part or all of the conductive segments of the micro-electromagnetic element is arranged to intersect with the magnetic field direction of the driving magnetic field. 如請求項12所述的電磁換能器,其中,所述微電磁元件的各導電段的通電電流方向相同,且所述微電磁元件的各導電段的通電電流方向與該驅動磁場的磁場方向垂直設置。The electromagnetic transducer according to claim 12, wherein the energizing current direction of each conductive segment of the micro-electromagnetic element is the same, and the energizing current direction of each conductive segment of the micro-electromagnetic element is consistent with the magnetic field direction of the driving magnetic field. Vertical setting. 如請求項10所述的電磁換能器,其中,還包括一殼體;所述磁性元件設置於該殼體內側;所述微電磁元件活動設置於該殼體中。The electromagnetic transducer according to claim 10, further comprising a casing; the magnetic element is disposed inside the casing; and the micro-electromagnetic element is movably disposed in the casing. 如請求項14所述的電磁換能器,其中,所述殼體的材質為導磁材質。The electromagnetic transducer according to claim 14, wherein the material of the housing is a magnetically permeable material. 一種電子裝置,其中包括如請求項10所述的電磁換能器。An electronic device, including the electromagnetic transducer according to claim 10.
TW112208799U 2023-08-18 2023-08-18 Micro-electromagnetic element, electromagnetic transducer and electronic device TWM652119U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI879028B (en) * 2023-08-18 2025-04-01 聖德斯貴股份有限公司 Micro-electromagnetic element, electromagnetic transducer and electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI879028B (en) * 2023-08-18 2025-04-01 聖德斯貴股份有限公司 Micro-electromagnetic element, electromagnetic transducer and electronic device

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