TWM650775U - Low concentration ozone gas supply device - Google Patents
Low concentration ozone gas supply device Download PDFInfo
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- TWM650775U TWM650775U TW112208940U TW112208940U TWM650775U TW M650775 U TWM650775 U TW M650775U TW 112208940 U TW112208940 U TW 112208940U TW 112208940 U TW112208940 U TW 112208940U TW M650775 U TWM650775 U TW M650775U
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title claims abstract description 222
- 238000010790 dilution Methods 0.000 claims abstract description 160
- 239000012895 dilution Substances 0.000 claims abstract description 160
- 238000003860 storage Methods 0.000 claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- 239000007789 gas Substances 0.000 claims description 203
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 238000007865 diluting Methods 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000003085 diluting agent Substances 0.000 description 5
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Oxygen, Ozone, And Oxides In General (AREA)
Abstract
一種低濃度臭氧氣體供應裝置,用以對一個或多個反應腔體提供低濃度臭氧氣體,包含一臭氧稀釋槽、一臭氧發生器、一稀釋氣體供應器以及多個氣體蓄壓桶。臭氧稀釋槽內部具有一稀釋空間,且臭氧稀釋槽具有一溢流口,連通於稀釋空間。臭氧發生器用於持續供應臭氧至臭氧稀釋槽的稀釋空間中。稀釋氣體供應器用於供應一稀釋氣體至稀釋空間,使臭氧與稀釋氣體於稀釋空間混合形成低濃度臭氧氣體,且稀釋空間的低濃度臭氧氣體持續由溢流口溢流。該些氣體蓄壓桶連接於稀釋空間;其中,稀釋空間的容積,大於該些氣體蓄壓桶的容積的總和。 A low-concentration ozone gas supply device is used to provide low-concentration ozone gas to one or more reaction chambers, and includes an ozone dilution tank, an ozone generator, a dilution gas supplier and a plurality of gas pressure storage barrels. There is a dilution space inside the ozone dilution tank, and the ozone dilution tank has an overflow port connected to the dilution space. The ozone generator is used to continuously supply ozone to the dilution space of the ozone dilution tank. The dilution gas supplier is used to supply a dilution gas to the dilution space, so that ozone and the dilution gas are mixed in the dilution space to form low-concentration ozone gas, and the low-concentration ozone gas in the dilution space continues to overflow from the overflow port. The gas pressure storage barrels are connected to the dilution space; wherein, the volume of the dilution space is greater than the sum of the volumes of the gas pressure storage barrels.
Description
本新型有關於半導體製程中的臭氧供應,特別是關於一種低濃度臭氧氣體供應裝置。 The present invention relates to ozone supply in semiconductor manufacturing processes, in particular to a low-concentration ozone gas supply device.
臭氧氣體經常應用於CVD/ALD製程,特別是應用於清洗晶圓表面,以去除晶圓表面的污染物。然而,在部分製程中,晶圓或粉末表面有時會存在重要的官能基在後續的製程中需要應用到。這些官能基容易與臭氧發生反應而被破壞。此時,就需要以較低濃度的臭氧通入反應腔室中,以避免官能基受到破壞。 Ozone gas is often used in CVD/ALD processes, especially for cleaning wafer surfaces to remove contaminants on the wafer surface. However, in some processes, there are sometimes important functional groups on the surface of the wafer or powder that need to be applied in subsequent processes. These functional groups are easily destroyed by reaction with ozone. At this time, a lower concentration of ozone needs to be introduced into the reaction chamber to avoid damage to the functional groups.
臭氧的稀釋是將臭氧發生器併聯於稀釋氣(O2或Ar)供應源,透過質量流量控制器控制稀釋氣的輸出,使得臭氧被稀釋氣所稀釋而產生低濃度臭氧氣體。但是,此種機制的低濃度臭氧氣體流量以及濃度都容易發生不穩定的現象,使得反應腔室中的臭氧作用難以控制。 The dilution of ozone is to connect the ozone generator in parallel with the diluent gas (O2 or Ar) supply source, and control the output of the diluent gas through the mass flow controller, so that the ozone is diluted by the diluent gas to produce low-concentration ozone gas. However, the low-concentration ozone gas flow rate and concentration of this mechanism are prone to instability, making it difficult to control the ozone effect in the reaction chamber.
鑑於上述技術問題,本新型提出一種低濃度臭氧氣體供應裝置,以穩定地對一個或多個反應腔體提供低濃度的臭氧氣體。 In view of the above technical problems, the present invention proposes a low-concentration ozone gas supply device to stably provide low-concentration ozone gas to one or more reaction chambers.
本新型提出一種低濃度臭氧氣體供應裝置,用以對一個或多個反應腔體提供低濃度臭氧氣體,包含一臭氧稀釋槽、一臭氧發生器、一稀釋氣體供應器以及多個氣體蓄壓桶。臭氧稀釋槽內部具有一稀釋空間,且臭氧稀釋槽具有一溢流口,連通於稀釋空間。臭氧發生器用於持續供應臭氧至臭氧稀釋槽的稀釋空間中。稀釋氣體供應器用於供應一稀釋氣體至稀釋空間,使臭氧與稀釋氣體於稀釋空間混合形成低濃度臭氧氣體,且稀釋空間的低濃度臭氧氣體持續由溢流口溢流。該些氣體蓄壓桶連接於稀釋空間;其中,稀釋空間的容積,大於些氣體蓄壓桶的容積的總和。 The present invention proposes a low-concentration ozone gas supply device for providing low-concentration ozone gas to one or more reaction chambers, including an ozone dilution tank, an ozone generator, a dilution gas supplier and a plurality of gas pressure storage barrels. . There is a dilution space inside the ozone dilution tank, and the ozone dilution tank has an overflow port connected to the dilution space. The ozone generator is used to continuously supply ozone to the dilution space of the ozone dilution tank. The dilution gas supplier is used to supply a dilution gas to the dilution space, so that ozone and the dilution gas are mixed in the dilution space to form low-concentration ozone gas, and the low-concentration ozone gas in the dilution space continues to overflow from the overflow port. The gas pressure storage barrels are connected to the dilution space; the volume of the dilution space is greater than the sum of the volumes of the gas pressure storage barrels.
至少一實施例中,臭氧稀釋槽更具有一臭氧接收口,且臭氧發生器連接於臭氧接收口。 In at least one embodiment, the ozone dilution tank further has an ozone receiving port, and the ozone generator is connected to the ozone receiving port.
至少一實施例中,臭氧發生器連接於一氧氣源,用接收氧氣,且臭氧發生器內部提供高壓電場,使得氧氣轉換為臭氧。 In at least one embodiment, the ozone generator is connected to an oxygen source to receive oxygen, and a high-voltage electric field is provided inside the ozone generator to convert oxygen into ozone.
至少一實施例中,臭氧稀釋槽更具有一稀釋氣體接收口,稀釋氣體供應器連接於稀釋氣體接收口。 In at least one embodiment, the ozone dilution tank further has a dilution gas receiving port, and the diluting gas supplier is connected to the diluting gas receiving port.
至少一實施例中,依據臭氧發生器所提供的臭氧質量流量,稀釋氣體供應器以一預定質量流量供應稀釋氣體至稀釋空間,使得稀釋空間中的低濃度臭氧氣體中的臭氧重量百分低於10%的重量百分率濃度。 In at least one embodiment, according to the ozone mass flow rate provided by the ozone generator, the dilution gas supplier supplies the dilution gas to the dilution space at a predetermined mass flow rate, so that the weight percentage of ozone in the low concentration ozone gas in the dilution space is less than 10% weight percent concentration.
至少一實施例中,稀釋氣體供應器包含一稀釋氣體源以及一質量流量控制器,稀釋氣體源用於供應稀釋氣體,質量流量控制器連接於稀釋氣體源以控制由稀釋氣體源流入稀釋空間的稀釋氣體的質量流量。 In at least one embodiment, the dilution gas supplier includes a dilution gas source and a mass flow controller. The dilution gas source is used to supply the dilution gas. The mass flow controller is connected to the dilution gas source to control the flow of the dilution gas source into the dilution space. Mass flow rate of dilution gas.
至少一實施例中,稀釋氣體為氧氣,稀釋氣體供應器的稀釋氣體源為氧氣源,且臭氧發生器由氧氣源接收氧氣。 In at least one embodiment, the diluting gas is oxygen, the diluting gas source of the diluting gas supplier is an oxygen source, and the ozone generator receives oxygen from the oxygen source.
至少一實施例中,臭氧稀釋槽設置有一臭氧壓力表頭,用於監控稀釋空間中的壓力,以調整臭氧及稀釋氣體的流量。 In at least one embodiment, the ozone dilution tank is provided with an ozone pressure gauge for monitoring the pressure in the dilution space to adjust the flow rate of ozone and dilution gas.
至少一實施例中,稀釋空間的容積大於氣體蓄壓桶的容積的總和再加成,且加成大於總和的10%。 In at least one embodiment, the volume of the dilution space is greater than the sum of the volumes of the gas pressure storage tanks plus an addition, and the addition is greater than 10% of the total.
至少一實施例中,各氣體蓄壓桶分別由一臭氧供應管路連接至一個對應的反應腔體,以供應低濃度臭氧氣體至對應的反應腔體,且各氣體蓄壓桶的容積大小以及對應的各臭氧供應管路的長度相同。 In at least one embodiment, each gas pressure storage barrel is connected to a corresponding reaction chamber by an ozone supply pipeline to supply low-concentration ozone gas to the corresponding reaction chamber, and the volume of each gas pressure storage barrel is: The corresponding ozone supply pipelines have the same length.
透過本新型提出的低濃度臭氧氣體供應裝置,臭氧與稀釋氣體係先於臭氧稀釋槽中充分混合成低濃度臭氧氣體,接著以低濃度臭氧氣體對氣體蓄壓桶進行充壓。經由氣體蓄壓桶的蓄壓,可確保對於反應腔體注入的低濃度臭氧氣體維持穩定的濃度與流量,以使反影腔體中的製程條件(例如晶圓清洗時間與溫度)更容易控制,維持良好的製程效果。 Through the low-concentration ozone gas supply device proposed by the present invention, the ozone and diluent gas system are first fully mixed into low-concentration ozone gas in the ozone dilution tank, and then the gas pressure storage barrel is pressurized with the low-concentration ozone gas. The pressure accumulation through the gas pressure storage barrel can ensure that the low-concentration ozone gas injected into the reaction chamber maintains a stable concentration and flow rate, making it easier to control the process conditions (such as wafer cleaning time and temperature) in the reflection chamber. , to maintain good process effects.
100:低濃度臭氧氣體供應裝置 100: Low concentration ozone gas supply device
110:臭氧稀釋槽 110:Ozone dilution tank
112:臭氧接收口 112: Ozone receiving port
114:稀釋氣體接收口 114: Dilution gas receiving port
116:溢流口 116: Overflow port
120:臭氧發生器 120:Ozone generator
130:稀釋氣體供應器 130: Dilution gas supplier
132:質量流量控制器 132:Mass flow controller
141,142,143:氣體蓄壓桶 141,142,143: Gas pressure storage barrel
150:臭氧供應管路 150:Ozone supply pipeline
200:反應腔體 200:Reaction chamber
CT:冷阱 CT: cold trap
D:臭氧解離槽 D:Ozone dissociation tank
G1:臭氧壓力表頭 G1: Ozone pressure gauge head
G2:真空壓力表頭 G2: Vacuum pressure gauge head
G3:腔體壓力表頭 G3: Cavity pressure gauge head
S1:氧氣源 S1:Oxygen source
S2:氬氣源 S2: Argon gas source
P1,P2:真空泵 P1, P2: Vacuum pump
V1:洩壓閥 V1: Pressure relief valve
V2:入口閥 V2:Inlet valve
V3:出口閥 V3: outlet valve
V4,V5:氣體閥 V4, V5: gas valve
V6,V7:關閉閥 V6, V7: closing valve
圖1是本新型實施例的中,低濃度臭氧氣體供應裝置及多個反應腔體的管路設計示意圖。 Figure 1 is a schematic diagram of the pipeline design of a medium and low concentration ozone gas supply device and multiple reaction chambers in an embodiment of the present invention.
圖2是本新型實施例的中,低濃度臭氧氣體供應裝置的管路設計示意圖。 Figure 2 is a schematic diagram of the pipeline design of the medium and low concentration ozone gas supply device according to the embodiment of the present invention.
圖3是本新型實施例的中,低濃度臭氧氣體供應裝置的管路設計示意圖。 Figure 3 is a schematic diagram of the pipeline design of the medium and low concentration ozone gas supply device according to the embodiment of the present invention.
圖4是本新型實施例的中,低濃度臭氧氣體供應裝置的管路設計示意圖。 Figure 4 is a schematic diagram of the pipeline design of the medium and low concentration ozone gas supply device according to the embodiment of the present invention.
圖5是本新型實施例的中,低濃度臭氧氣體供應裝置的管路設計示意圖。 Figure 5 is a schematic diagram of the pipeline design of a medium- and low-concentration ozone gas supply device according to an embodiment of the present invention.
圖6是本新型實施例的中,低濃度臭氧氣體供應裝置的管路設計示意圖。 Figure 6 is a schematic diagram of the pipeline design of the medium and low concentration ozone gas supply device according to the embodiment of the present invention.
請參閱圖1與圖2所示,為本新型實施例所揭露的一種低濃度臭氧氣體供應裝置100,包含一臭氧稀釋槽110、一臭氧發生器120、一稀釋氣體供應器130以及多個氣體蓄壓桶141,142。低濃度臭氧氣體供應裝置100用於對一個或多個反應腔體200提供壓力、流量穩定的低濃度臭氧氣體。
Please refer to FIGS. 1 and 2 . A low-concentration ozone
如圖1與圖2所示,臭氧稀釋槽110的內部具有一稀釋空間,且臭氧稀釋槽110具有一臭氧接收口112、一稀釋氣體接收口114以及一溢流口116,分別連通於稀釋空間。
As shown in Figures 1 and 2, the
如圖1與圖2所示,臭氧發生器120連接於臭氧接收口112,用於持續供應臭氧至臭氧稀釋槽110的稀釋空間中。具體而言,臭氧發生器120連接於一氧氣源S1,用接收氧氣(O2)。臭氧發生器120內部透過電極板提供高壓電場,使得氧氣分子解離為單獨氧原子,單獨的氧原子再與氧氣分子結合而形成臭氧分子(O3)。
As shown in FIGS. 1 and 2 , the
如圖1與圖2所示,稀釋氣體供應器130連接於稀釋氣體接收口114,用於供應一稀釋氣體至稀釋空間。稀釋氣體與臭氧在稀釋空間中混合而產生低濃度臭氧氣體。依據臭氧發生器120所提供的臭氧質量流量,稀釋氣體供應器130以一預定質量流量供應稀釋氣體至稀釋空間,使得稀釋空間中的低濃度臭
氧氣體中的臭氧重量百分率濃度(wt%)可以維持於一預定濃度,例如低於10%的臭氧重量百分率濃度,但不以低於10%為限。
As shown in FIGS. 1 and 2 , the
如圖1與圖2所示,稀釋氣體供應器130包含一稀釋氣體源以及一質量流量控制器132。稀釋氣體源用於供應稀釋氣體。質量流量控制器132連接於稀釋氣體源以及稀釋氣體接收口114,以控制由稀釋氣體源流入稀釋空間的稀釋氣體的質量流量。
As shown in FIGS. 1 and 2 , the
如圖1與圖2所示,稀釋氣體可為氧氣(O2)或氬氣(Ar)。在稀釋氣體是氧氣(O2)的場合,臭氧發生器120與稀釋氣體供應器130可共用氧氣源S1,也就是氧氣源S1同時也是稀釋氣體供應器130的稀釋氣體源。亦即,氧氣源S1提供氧氣至臭氧發生器120,質量流量控制器也連接同一氧氣源S1,以將氧氣源S1提供的氧氣作為稀釋氣體。
As shown in Figures 1 and 2, the diluting gas can be oxygen (O2) or argon (Ar). When the diluting gas is oxygen (O2), the
如圖3所示,當稀釋氣體是氬氣(Ar)時,則質量流量控制器132連接至氬氣源S2,而以氬氣源S2作為稀釋氣體源。圖3中的氬氣源可以置換為其他種類的氣體源,只要是不容易與臭氧發生反應,也不會影響晶圓的表面特性即可。氬氣源S2也可以是另一個氧氣源,也就是臭氧發生器120與稀釋氣體供應器130各自連接至不同的氧氣源,而不共用單一個氧氣源S1。
As shown in FIG. 3 , when the diluting gas is argon (Ar), the
如圖2與圖3所示,具體而言,臭氧發生器120是持續供應臭氧至臭氧稀釋槽110的稀釋空間,稀釋氣體供應器130持續供應稀釋氣體至臭氧稀釋槽110的稀釋空間,而稀釋空間的低濃度臭氧氣體也持續由溢流口116溢流至臭氧解離槽D,使得低濃度臭氧氣體在臭氧稀釋槽110中是處於持續補充以及溢流的流動狀態,藉以維持低濃度臭氧氣體的濃度以及壓力。需說明的是,臭氧發生器120並非供應純臭氧氣體,而是供應臭氧與氧氣的混合氣體。
As shown in Figures 2 and 3, specifically, the
如圖1、圖2與圖3所示,臭氧稀釋槽110設置有一臭氧壓力表頭G1。臭氧壓力表頭G1用於監控稀釋空間中的壓力,以調整臭氧及稀釋氣體的流量,並確保稀釋空間中的壓力大於臭氧解離槽D以及氣體蓄壓桶141,142的壓力,避免氣體由溢流口116及/或氣體蓄壓桶141,142回流而污染低濃度臭氧氣體。溢流口116也可以設置有一洩壓閥V1,洩壓閥V1於壓力大於預定值時開啟,而於壓力小於預定值時關閉,同樣可避免外部氣體由溢流口116回流至稀釋空間。
As shown in Figures 1, 2 and 3, the
如圖1、圖2與圖3所示,多個氣體蓄壓桶141,142分別透過一入口閥V2連接於臭氧稀釋槽110的稀釋空間,以由稀釋空間接收低濃度臭氧氣體。入口閥V2可以適時關閉,避免氣體經由管路回流至稀釋空間。具體而言,稀釋空間的容積,大於多個氣體蓄壓桶141,142的容積的總和,以確保臭氧稀釋槽110可以隨時供應壓力足夠的低濃度臭氧氣體至氣體蓄壓桶141,142。較佳地,稀釋空間的容積大於多個氣體蓄壓桶141,142的容積的總和再加成。加成可為總和的10%,20%或更高。
As shown in Figures 1, 2 and 3, a plurality of gas pressure storage barrels 141 and 142 are respectively connected to the dilution space of the
如圖1所示,各氣體蓄壓桶141,142分別由臭氧供應管路150連接至一個對應的反應腔體200,以供應低濃度臭氧氣體至對應的反應腔體200。臭氧供應管路150可設置一出口閥V3,位於反應腔體與對應的氣體蓄壓桶141,142之間。出口閥V3用於適時地開啟或關閉對反應腔體200供應的低濃度臭氧氣體。亦即,透過多個出口閥V3選擇性地開啟或關閉,可同時對每一個反應腔體200供應低濃度臭氧氣體,或是只對個別的反應腔體200供應低濃度臭氧氣體。
As shown in FIG. 1 , each gas
此外,氣體蓄壓桶141,142的容積大小以及對應的臭氧供應管路150的長度會影響臭氧的濃度與流量。為了使得各反應腔體200接收到的臭氧濃
度與流量一致,氣體蓄壓桶141,142的容積大小以及對應的臭氧供應管路150的長度必須相同。臭氧供應管路150的中段也可以旁通至一真空泵P1。在開始供應低濃度臭氧氣體之前,可先關閉入口閥V2與出口閥V3,並啟動真空泵P1,以將氣體蓄壓桶141,142內部殘留的氣體排空。
In addition, the volume of the gas pressure storage barrels 141 and 142 and the corresponding length of the
在開始供應低濃度臭氧氣體時,可先關閉出口閥V3,使氣體蓄壓桶141,142中的低濃度臭氧氣體壓力被填充至與臭氧稀釋槽110的壓力一致時,再開啟出口閥V3,以確保供應至各反應腔體200的臭氧的濃度與流量可以穩定。
When starting to supply low-concentration ozone gas, the outlet valve V3 can be closed first, so that the low-concentration ozone gas pressure in the gas pressure storage barrels 141 and 142 is filled to the same pressure as the
如圖4所示,二個氣體蓄壓桶141,142僅為例示,實際上可以是超過二個,例如三個氣體蓄壓桶141,142,143。每一個氣體蓄壓桶141,142,143分別連接至依個反應腔體200。
As shown in FIG. 4 , the two gas pressure storage barrels 141 and 142 are only an example. In fact, there may be more than two, for example, three gas pressure storage barrels 141, 142, and 143. Each gas
如圖1所示,反應腔體200還可以透過氣體閥V4,V5連接至不同的工作氣體,以供後續CVD/ALD製程之用。例如氣體閥V4可連接至三甲基鋁(Trimethylaluminum,TMA)氣體源,用以使反應腔體200接收TMA氣;氣體閥V5可連接至氮氣源,以使反應腔體200接收氮氣。反應腔體200也可以連接至真空泵P2,以對反應腔體200抽氣,維持反應腔體200內部為低壓。反應腔體200與真空泵P2之間可以設置冷阱CT,以收集氣體中凝結點高的物質。冷阱CT與真空泵P2之間可設置真空壓力表頭G2,以監控真空泵P2運作後的壓力變化。冷阱CT與真空泵P2之間可設置一關閉閥V6,以在真空泵P2停止運作時關閉管路。反應腔體200也可以透過關閉閥V7連接於一腔體壓力表頭G3,以監控反應腔體200內部的壓力。
As shown in FIG. 1 , the
如圖5所示,當臭氧發生器120的臭氧產生量不足時,低濃度臭氧氣體供應裝置100可包含多個臭氧發生器120,分別連接至臭氧稀釋槽110,或併聯後連接至臭氧稀釋槽110,以確保臭氧供應量充足。
As shown in FIG. 5 , when the ozone generation amount of the
如圖5所示,當臭氧發生器120的臭氧產生量不足時,低濃度臭氧氣體供應裝置100可包含多個臭氧發生器120,分別連接至臭氧稀釋槽110,或併聯後連接至臭氧稀釋槽110,以確保臭氧供應量充足。
As shown in FIG. 5 , when the ozone generation amount of the
如圖6所示,當臭氧稀釋槽110的容量不足,例如單一個臭氧稀釋槽110的容量小於多個氣體蓄壓桶141,142的容積的總和,或是稀釋空間的容積小於多個氣體蓄壓桶141,142的容積的總和再加成時,低濃度臭氧氣體供應裝置100可包含多個臭氧稀釋槽110。多個臭氧稀釋槽110之間互相連通,以平衡臭氧氣體的壓力以及臭氧濃度。多個臭氧稀釋槽110可以串連配置,由單一個臭氧稀釋槽110接收臭氧與稀釋氣體,並由單一的臭氧稀釋槽110輸出低濃度臭氧氣體。多個臭氧稀釋槽110可以併聯配置,由臭氧與稀釋氣體同時注入多個臭氧稀釋槽110,而多個臭氧稀釋槽110輸出的低濃度臭氧氣體經由岐管合流後再分流至各氣體蓄壓桶141,142。
As shown in Figure 6, when the capacity of the
透過本新型提出的低濃度臭氧氣體供應裝置100,臭氧與稀釋氣體係先於臭氧稀釋槽110中充分混合成低濃度臭氧氣體,接著以低濃度臭氧氣體對氣體蓄壓桶141,142進行充壓。經由氣體蓄壓桶141,142的蓄壓,可確保對於反應腔體注入的低濃度臭氧氣體維持穩定的濃度與流量,以使反影腔體中的製程條件(例如晶圓清洗時間與溫度)更容易控制,維持良好的製程效果。
Through the low-concentration ozone
100:低濃度臭氧氣體供應裝置 100: Low concentration ozone gas supply device
110:臭氧稀釋槽 110:Ozone dilution tank
112:臭氧接收口 112: Ozone receiving port
114:稀釋氣體接收口 114: Dilution gas receiving port
116:溢流口 116: Overflow port
120:臭氧發生器 120:Ozone generator
130:稀釋氣體供應器 130: Dilution gas supplier
141,142:氣體蓄壓桶 141,142: Gas pressure storage barrel
150:臭氧供應管路 150:Ozone supply pipeline
200:反應腔體 200:Reaction chamber
CT:冷阱 CT: cold trap
D:臭氧解離槽 D:Ozone dissociation tank
G1:臭氧壓力表頭 G1: Ozone pressure gauge head
G2:真空壓力表頭 G2: Vacuum pressure gauge head
G3:腔體壓力表頭 G3: Cavity pressure gauge head
S1:氧氣源 S1:Oxygen source
P1,P2:真空泵 P1, P2: Vacuum pump
V1:洩壓閥 V1: Pressure relief valve
V2:入口閥 V2:Inlet valve
V3:出口閥 V3: outlet valve
V4,V5:氣體閥 V4, V5: gas valve
V6,V7:關閉閥 V6, V7: closing valve
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112208940U TWM650775U (en) | 2023-08-22 | 2023-08-22 | Low concentration ozone gas supply device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW112208940U TWM650775U (en) | 2023-08-22 | 2023-08-22 | Low concentration ozone gas supply device |
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| Publication Number | Publication Date |
|---|---|
| TWM650775U true TWM650775U (en) | 2024-01-21 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112208940U TWM650775U (en) | 2023-08-22 | 2023-08-22 | Low concentration ozone gas supply device |
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| Country | Link |
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| TW (1) | TWM650775U (en) |
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2023
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