TWM594790U - Insulating soft magnetic film - Google Patents
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- TWM594790U TWM594790U TW108210996U TW108210996U TWM594790U TW M594790 U TWM594790 U TW M594790U TW 108210996 U TW108210996 U TW 108210996U TW 108210996 U TW108210996 U TW 108210996U TW M594790 U TWM594790 U TW M594790U
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- soft magnetic
- insulating soft
- resin
- magnetic film
- insulating
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 110
- 229920005989 resin Polymers 0.000 claims abstract description 67
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- 239000006249 magnetic particle Substances 0.000 claims description 29
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 15
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 10
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical class [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910008458 Si—Cr Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
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- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
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- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 239000004115 Sodium Silicate Substances 0.000 description 1
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- IWZLBIVZPIDURM-UHFFFAOYSA-N trimethoxy(3-prop-1-enoxypropyl)silane Chemical compound CO[Si](OC)(OC)CCCOC=CC IWZLBIVZPIDURM-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
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- Soft Magnetic Materials (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
本創作提出一種絕緣軟磁膜,係包含一種絕緣軟磁膜,係包含一樹脂層,其中該絕緣軟磁膜係直接覆蓋在一設置於一電路板的表面的電路圖案上,並與該電路圖案接觸。該絕緣軟磁膜係為電氣絕緣的吸波層,尤其是覆蓋在電路板的電路圖案上時不會造成電路的短路,且於高頻段有大的吸波效果,使得覆蓋有吸波層的電路板在高頻段能有效地消除所受的電磁干擾。 This creation proposes an insulating soft magnetic film that includes an insulating soft magnetic film that includes a resin layer, wherein the insulating soft magnetic film directly covers a circuit pattern provided on the surface of a circuit board and contacts the circuit pattern. The insulating soft magnetic film is an electrically insulating wave absorbing layer, especially when covered on the circuit pattern of the circuit board, it will not cause a short circuit of the circuit, and has a large wave absorbing effect in the high frequency band, making the circuit covered with the wave absorbing layer The board can effectively eliminate the electromagnetic interference in the high frequency band.
Description
本創作係有關於一種絕緣軟磁膜,特別是指一種用於電磁干擾(Electromagnetic Interference,EMI)防制的絕緣軟磁膜。 This creation is about an insulating soft magnetic film, especially refers to an insulating soft magnetic film used to prevent electromagnetic interference (Electromagnetic Interference, EMI).
目前常用的主機裝置所安裝的主機板(一般為印刷電路板)上,多具有例如中央處理器等容易發出高頻雜訊的電子元件,以及眾多易受外界干擾的其它元件(例如晶片)與電路。為了使電子元件避免干擾其他元件及電路的運作,以及避免電子元件與其他元件及電路的彼此干擾,因此需要電磁干擾防制,以保護電子元件與其他元件及電路。 Most of the motherboards (usually printed circuit boards) installed on the currently used host devices have electronic components such as a central processor that are prone to emit high-frequency noise, as well as many other components (such as chips) and other components that are susceptible to external interference. Circuit. In order to prevent electronic components from interfering with the operation of other components and circuits, as well as avoiding mutual interference between electronic components and other components and circuits, electromagnetic interference prevention is needed to protect electronic components and other components and circuits.
主機板通常佈設有眾多電路形成電路圖案,電磁干擾防制的方式之一則是將屏蔽層直接覆蓋於主機板的電路且設置於高頻的電子元件與其它元件之間。目前已知的電磁干擾防制的屏蔽層的設置方式之一,係以通常由導電顆粒、樹脂及溶劑所組成的導電油墨,整個覆蓋於電子元件或晶片形成導電層以做為電磁干擾屏蔽層。然而在高頻段(不小於1GHz)被電磁干擾屏蔽層所屏蔽的電磁波,由於並未被吸收消除,因此高頻的電子元件與其它元件之間彼此會互相干擾,這反而形成了新的電磁干擾。更何況很難避免的是,導電層所形成的電磁干擾屏蔽層很容易同時覆蓋電子元件或晶片周圍的兩條相鄰的電路,這造成了電路的短路而導致主機板報 廢。再者,依據國際標準IEC62333的測試,S21參數為透射係數而S11參數為反射係數,電磁干擾屏蔽層的測試結果雖然於高頻段(不小於1.0GHz)有大的S21屏蔽效果,但S11趨近於零,這表示電磁波不但完全沒有被電磁干擾屏蔽層衰減,反而因為接近於全反射而可能形成了新的電磁干擾。因此,覆蓋有前述電磁干擾屏蔽層的主機板在高頻段無法有效地消除所受的電磁干擾。 The motherboard is usually equipped with a large number of circuits to form a circuit pattern. One of the ways to prevent electromagnetic interference is to directly cover the circuit of the motherboard with the shielding layer and set it between high-frequency electronic components and other components. One of the currently known shielding methods for electromagnetic interference prevention is to use conductive ink, usually composed of conductive particles, resin and solvent, to cover the entire electronic component or wafer to form a conductive layer to serve as an electromagnetic interference shielding layer . However, the electromagnetic wave shielded by the electromagnetic interference shielding layer in the high frequency band (not less than 1 GHz) is not absorbed and eliminated, so high-frequency electronic components and other components will interfere with each other, which instead forms a new electromagnetic interference . Moreover, it is difficult to avoid that the electromagnetic interference shielding layer formed by the conductive layer can easily cover two adjacent circuits around the electronic component or the wafer at the same time, which causes a short circuit of the circuit and causes the motherboard to report Waste. Furthermore, according to the test of international standard IEC62333, the S21 parameter is the transmission coefficient and the S11 parameter is the reflection coefficient. Although the test results of the electromagnetic interference shielding layer have a large S21 shielding effect in the high frequency band (not less than 1.0 GHz), S11 approaches At zero, this means that the electromagnetic wave is not completely attenuated by the electromagnetic interference shielding layer, but because it is close to total reflection, new electromagnetic interference may be formed. Therefore, the motherboard covered with the aforementioned electromagnetic interference shielding layer cannot effectively eliminate the electromagnetic interference received in the high frequency band.
本創作係考量上述情況,目的在於提供一種絕緣軟磁膜。該絕緣軟磁膜係為電氣絕緣(表面電阻值不小於1.0x109歐姆/平方(Ω/□))的電磁波的吸波層,尤其是大面積地覆蓋在電路板的電路圖案上時,不會造成電路的短路,且於高頻段(不小於1.0GHz)有大的衰減信號,使得覆蓋有該絕緣軟磁膜(吸波層)的電路板在高頻段能有效地消除所受的電磁干擾。 This creative department considers the above situation and aims to provide an insulating soft magnetic film. When the insulating soft magnetic film is an electrical insulation system (the surface resistance value of not less than 1.0x10 9 ohms / square (Ω / □)) of the electromagnetic wave absorbing layer, in particular a large area covering the circuit pattern on the circuit board, not It causes a short circuit of the circuit, and there is a large attenuation signal in the high frequency band (not less than 1.0 GHz), so that the circuit board covered with the insulating soft magnetic film (wave absorbing layer) can effectively eliminate the electromagnetic interference received in the high frequency band.
本創作提出一種絕緣軟磁膜,係包含一樹脂層,其中該絕緣軟磁膜係直接覆蓋在一設置於一電路板的表面的一電路圖案上並與該電路圖案接觸。 This creation proposes an insulating soft magnetic film, which includes a resin layer, wherein the insulating soft magnetic film directly covers a circuit pattern disposed on the surface of a circuit board and contacts the circuit pattern.
前述該絕緣軟磁膜,其中該絕緣軟磁膜更包含複數個分佈設置於該樹脂層之絕緣軟磁顆粒,各該絕緣軟磁顆粒具有一芯部和包圍該芯部的周圍的一殼部,該絕緣軟磁顆粒的形狀為球狀,粒徑係介於1μm~50μm,該芯部為鐵矽鉻合金球,該殼部為磷酸鹽皮膜、矽酸鹽皮膜或二氧化矽皮膜,該殼部的絕緣電阻值為大於5x109Ω;該殼部及該樹脂層係不同的材料所構成,其中該殼部的重量為該芯部的重量的1%~10%。 The aforementioned insulating soft magnetic film, wherein the insulating soft magnetic film further includes a plurality of insulating soft magnetic particles distributed on the resin layer, each of the insulating soft magnetic particles has a core portion and a shell portion surrounding the core portion, the insulating soft magnetic film The shape of the particles is spherical, and the particle size is between 1 μm and 50 μm . The core part is a ferrosilicon chromium alloy ball, and the shell part is a phosphate film, a silicate film, or a silicon dioxide film. The shell insulation resistance value larger than the portion of 5x10 9 Ω; of the shell portion of the resin layer and the different-based material formed, wherein 1% to 10% by weight for the weight of the shell portion of the core portion.
前述該絕緣軟磁膜,其中以複數個該絕緣軟磁顆粒及該樹脂層為100wt%為計量,該絕緣軟磁膜係包含有55.56~95.74wt%的複數個該絕緣軟磁顆粒。 In the aforementioned insulating soft magnetic film, wherein the plurality of insulating soft magnetic particles and the resin layer are measured at 100 wt%, the insulating soft magnetic film includes a plurality of 55.56~95.74 wt% of the plurality of insulating soft magnetic particles.
前述該絕緣軟磁膜,其中該樹脂層係由一第一樹脂及一第二樹脂所構成,該殼部的材料、該第一樹脂及該第二樹脂係彼此不相同;且以複數個該絕緣軟磁顆粒、該第一樹脂及該第二樹脂為100wt%為計量,該絕緣軟磁膜包含有3.06~33.33wt%的該第一樹脂及1.01~11.11wt%的該第二樹脂。 In the aforementioned soft magnetic insulating film, the resin layer is composed of a first resin and a second resin, the material of the shell, the first resin and the second resin are different from each other; and a plurality of the insulating The soft magnetic particles, the first resin and the second resin are measured at 100 wt%. The insulating soft magnetic film includes 3.06 to 33.33 wt% of the first resin and 1.01 to 11.11 wt% of the second resin.
前述該絕緣軟磁膜,其中該第一樹脂係為酚醛環氧樹脂,該第二樹脂係為苯酚與甲醛縮水甘油醚的聚合物。 In the aforementioned insulating soft magnetic film, the first resin system is a phenol epoxy resin, and the second resin system is a polymer of phenol and formaldehyde glycidyl ether.
本創作所提供的該絕緣軟磁膜,其對於在高頻段(不小於1GHz)幅射的電磁波,電磁波會被該絕緣軟磁膜中所含的磁性材料吸收而衰減,所以在高頻段(不小於1GHz)顯示極佳的S21(透射係數)屏蔽效果,當該絕緣軟磁膜的厚度為1mm時,S21有約1~15dB的屏蔽衰減效果;當該絕緣軟磁膜的厚度為2.6mm時,S11(反射係數)呈現出在2.64GHz可達超過20dB的反射衰減效果。因此,覆蓋有本創作所提供的該絕緣軟磁油墨及該絕緣軟磁膜的主機板,在高頻段能夠有效地消除所受的電磁干擾。然而習知電磁干擾屏蔽層在高頻段(不小於1GHz)下電磁干擾屏蔽層顯示S11幾乎為零,表示其為將電磁波全反射而不具吸波(不具吸收電磁波)的效果。雖然電磁干擾屏蔽層於高頻段(不小於1.0GHz)有大的S21屏蔽效果,但因為S11趨近於零,這表示電磁波不但完全沒有被電磁干擾屏蔽層衰減,反而 因為接近於將電磁波全反射而可能形成了新的電磁干擾。因此,覆蓋有前述電磁干擾屏蔽層的主機板在高頻段並無法有效地消除所受的電磁干擾。 The insulating soft magnetic film provided by this work, for the electromagnetic waves radiated in the high frequency band (not less than 1GHz), the electromagnetic wave will be absorbed and attenuated by the magnetic material contained in the insulating soft magnetic film, so in the high frequency band (not less than 1GHz) ) Shows excellent S21 (transmission coefficient) shielding effect, when the thickness of the insulating soft magnetic film is 1mm, S21 has a shielding attenuation of about 1~15dB; when the thickness of the insulating soft magnetic film is 2.6mm, S11 (reflection Coefficient) presents a reflection attenuation effect of up to 20dB at 2.64GHz. Therefore, the host board covered with the insulating soft magnetic ink and the insulating soft magnetic film provided by this creation can effectively eliminate the electromagnetic interference received in the high frequency band. However, the conventional electromagnetic interference shielding layer shows that S11 is almost zero at a high frequency band (not less than 1 GHz), indicating that it is a total reflection of electromagnetic waves without the effect of absorbing (not absorbing electromagnetic waves). Although the electromagnetic interference shielding layer has a large S21 shielding effect in the high frequency band (not less than 1.0 GHz), but because S11 is approaching zero, this means that the electromagnetic wave is not completely attenuated by the electromagnetic interference shielding layer, but instead Because it is close to total reflection of electromagnetic waves, new electromagnetic interference may be formed. Therefore, the motherboard covered with the aforementioned electromagnetic interference shielding layer cannot effectively eliminate the electromagnetic interference received in the high frequency band.
1:絕緣軟磁顆粒 1: Insulated soft magnetic particles
11:芯部 11: Core
12:殼部 12: Shell
100:絕緣軟磁膜 100: Insulated soft magnetic film
2:樹脂層 2: resin layer
3:電路板 3: circuit board
31:電路圖案 31: Circuit pattern
第1圖為本創作中絕緣軟磁顆粒的結構示意圖。 Figure 1 is a schematic diagram of the structure of insulating soft magnetic particles in the creation.
第2圖為本創作之絕緣軟磁膜的結構示意圖。 Figure 2 is a schematic diagram of the structure of the insulated soft magnetic film.
為使審查人員更容易明瞭本創作之技術內容、特點與功效,配合實施例與比較例的呈現,將可更清楚的說明,但本創作不受該些實施例所限定。此外,本說明書及申請專利範圍中使用「~」表示數值範圍是指涵蓋「~」前後所記載數值做為下限值及上限值的範圍;本說明書及申請專利範圍中使用「wt%」,係指重量百分比;本說明書及申請專利範圍中使用「粒徑」,係指利用雷射粒徑分析儀所測定之粒徑。 In order to make it easier for reviewers to understand the technical content, characteristics and effects of this creation, the presentation of the examples and comparative examples will make it clearer, but this creation is not limited by these examples. In addition, the use of "~" in this specification and the scope of patent application means that the numerical range refers to the range covering the numerical values described before and after "~" as the lower limit and the upper limit; "wt%" is used in this specification and the scope of patent application , Refers to the weight percentage; the "particle size" used in this specification and the scope of patent application refers to the particle size measured by the laser particle size analyzer.
本創作之一種絕緣軟磁膜係由一種絕緣軟磁油墨所製作,該絕緣軟磁油墨包含:50wt%~90wt%的複數個絕緣軟磁顆粒、3wt%~30wt%的一第一樹脂、1wt%~10wt%的一第二樹脂及1wt%~10wt%的一溶劑。 An insulating soft magnetic film in this creation is made of an insulating soft magnetic ink, the insulating soft magnetic ink contains: a plurality of insulating soft magnetic particles of 50wt% ~ 90wt%, a first resin of 3wt% ~ 30wt%, 1wt% ~ 10wt% A second resin and a solvent of 1wt% ~ 10wt%.
請參閱第1圖,前述之該絕緣軟磁顆粒1具有一芯部11和包圍該芯部的周圍的一殼部12。其中,該芯部11為軟磁性材料(鐵磁性合金材料)所構成之軟磁性芯部,該芯部11可以為:磁性不鏽鋼(Fe-Cr-Al-Si合金)、鐵矽鋁合金(Fe-Si-Al合金)、鎳鐵合金(Fe-Ni合金)、鐵矽銅合金(Fe-Cu-Si
合金)、鐵矽合金Fe-Si合金、鐵矽鉻鎳合金(Fe-Si-Cr-Ni合金)、鐵矽鉻合金(Fe-Si-Cr合金)或鐵氧體等,而就本創作的磁特性方面而言,較佳為鐵矽鉻合金(Fe-Si-Cr合金)。該殼部12係為絕緣材料所構成,該殼部12可以為:磷酸鹽皮膜、矽酸鹽皮膜或二氧化矽皮膜,該殼部12係藉由將該芯部11的重量的1%~10%進行一表面絕緣處理而形成,所述該表面絕緣處理例如為該殼部12係藉由磷化處理該芯部11或矽酸鈉鹽披覆該芯部11來完成。也就是說,該殼部12的重量為該芯部的重量的1%~10%。前述磷化處理係利用磷酸或磷酸鹽溶液與前述該芯部11所列舉的合金的表面之鐵原子進行置換反應(Conversion Reaction)反應,以形成磷酸鹽皮膜。另外也可以利用矽酸鈉鹽所形成之水玻璃絕緣材料,直接加成披覆(Overlay Coating)於該芯部11之表面,經乾燥除水後以形成矽酸鹽皮膜。再者,也可以矽烷單體聚合形成聚矽氧烷(polysiloxane)分子,然後直接加成披覆於該芯部11之表面,經乾燥除水後以形成二氧化矽皮膜。特別說明的是,前述該殼部12的絕緣電阻值為大於5GΩ(5x109Ω)。前述之該絕緣軟磁顆粒1的形狀可以為球狀、扁平狀或纖維狀,於本創作中較佳為球狀,粒徑係介於1μm~50μm,也就是說該芯部11可以為鐵矽鉻合金球;且,以鐵矽鉻合金為100wt%為計量,該芯部包含85wt%~95wt%的鐵、1wt%~10wt%的矽及1wt%~5wt%的鉻。
Please refer to FIG. 1, the aforementioned insulated soft magnetic particle 1 has a
前述之該第一樹脂可以為酚醛環氧樹脂(phenolic epoxy resin)或鄰甲酚醛環氧樹脂(O-Methyl phenolic epoxy resin)。較佳地,該第一樹脂為酚醛環氧樹脂。 The aforementioned first resin may be a phenolic epoxy resin or an O-Methyl phenolic epoxy resin. Preferably, the first resin is a phenolic epoxy resin.
前述之該第二樹脂可以為苯酚與甲醛縮水甘油醚的聚合物(CAS Number:28064-14-4)(Phenol polymer with formaldehyde glycidyl ether)、雙酚F型環氧樹脂或線型醛環氧樹脂。 The aforementioned second resin may be a polymer of phenol and formaldehyde glycidyl ether (CAS Number: 28064-14-4) (Phenol polymer with formaldehyde glycidyl ether), bisphenol F type epoxy resin or novolak epoxy resin.
該第一樹脂與該第二樹脂係不相同,且該殼部的材料、該第一樹脂及該第二樹脂係彼此不相同。 The first resin and the second resin system are different, and the material of the shell, the first resin, and the second resin system are different from each other.
前述之該溶劑可以為乙二醇丁醚醋酸酯、乙二醇乙醚醋酸酯、雙乙二醇丁醚醋酸酯、雙乙二醇乙醚醋酸或1,1,3-三甲基環己烯酮。 The aforementioned solvent can be ethylene glycol butyl ether acetate, ethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate or 1,1,3-trimethylcyclohexenone .
為了提升複數個該絕緣軟磁顆粒在該絕緣軟磁油墨中的分散性,該絕緣軟磁油墨係可以包含一分散劑。以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該分散劑係為0.001wt%~0.01wt%。該分散劑係可以為乙烯基三甲氧基矽烷、3-環氧丙氧丙基三甲氧基矽烷、p-苯乙烯基三甲氧基矽烷、3-丙烯醯氧丙基三甲氧基矽烷或3-巰基丙基甲基二甲氧基矽烷。 In order to improve the dispersibility of the plurality of insulating soft magnetic particles in the insulating soft magnetic ink, the insulating soft magnetic ink system may contain a dispersant. A plurality of the insulating soft magnetic particles, the first resin, the second resin, and the solvent are measured at 100 wt%, and the dispersant is 0.001 wt% to 0.01 wt%. The dispersant system can be vinyl trimethoxysilane, 3-glycidoxypropyltrimethoxysilane, p-styryltrimethoxysilane, 3-propenyloxypropyltrimethoxysilane or 3- Mercaptopropylmethyldimethoxysilane.
為了降低攪拌過程中,該絕緣軟磁油墨所產生氣泡的量,該絕緣軟磁油墨係可以包含一消泡劑。以複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑為100wt%為計量,該消泡劑係為0.1wt~0.2wt%。該消泡劑係可以為有機矽類消泡劑或聚合物類消泡劑。 In order to reduce the amount of bubbles generated by the insulating soft magnetic ink during stirring, the insulating soft magnetic ink system may contain a defoamer. A plurality of the insulating soft magnetic particles, the first resin, the second resin, and the solvent are measured at 100 wt%, and the defoamer is 0.1 wt% to 0.2 wt%. The defoamer system can be an organic silicon defoamer or a polymer defoamer.
本創作之該絕緣軟磁油墨之製備: Preparation of the insulating soft magnetic ink in this creation:
本創作之該絕緣軟磁油墨可以藉由包含以下步驟之一種絕緣軟磁油墨的製造方法所製造:(1)依據設定的各別複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑的重量百分比準備材料;(2)混合複數個該絕緣軟磁顆粒、該第一樹脂、該第二樹脂及該溶劑於室溫下以行星式攪拌機攪 拌混合均勻,並選擇性地可加入適當的分散劑及/或消泡劑添加劑以完成該絕緣軟磁油墨。 The insulating soft magnetic ink of the present creation can be manufactured by a method of manufacturing an insulating soft magnetic ink including the following steps: (1) according to the set plural pluralities of the insulating soft magnetic particles, the first resin, the second resin and the Prepare the material by weight percentage of the solvent; (2) Mix a plurality of the insulating soft magnetic particles, the first resin, the second resin and the solvent at room temperature with a planetary mixer Mix well, and optionally add appropriate dispersant and/or defoamer additives to complete the insulating soft magnetic ink.
本創作之該絕緣軟磁膜之製備: Preparation of the insulating soft magnetic film in this creation:
係藉由下述之一種絕緣軟磁膜的製備方法以製備該絕緣軟磁膜:於未組裝晶片及元件且具有電路圖案的一主機電路板上利用網版印刷方式或不鏽鋼板的刮刀塗佈方式,將該絕緣軟磁油墨塗佈於該主機電路板的電路圖案上以形成一預定大小及形狀的塗層,再利用烘箱以一預定的溫度(例如150℃)乾燥一預定的時間(例如30分鐘)以將該溶劑揮發並形成片狀的該絕緣軟磁膜,該絕緣軟磁膜之厚度為100μm~2.6mm;較佳地該絕緣軟磁膜之厚度為100μm~300μm。請一併參閱第2圖,特別說明的是,該絕緣軟磁膜100係包含一樹脂層2,其中該絕緣軟磁膜100係直接覆蓋在一設置於一電路板3的表面的電路圖案31上並與該電路圖案31接觸;其中,該樹脂層2係由該第一樹脂及該第二樹脂所構成,該殼部12的材料、該第一樹脂及該第二樹脂係彼此不相同。
The insulating soft magnetic film is prepared by the following preparation method of an insulating soft magnetic film: using a screen printing method or a doctor blade coating method of a stainless steel plate on a host circuit board without assembled wafers and components and having a circuit pattern, Apply the insulating soft magnetic ink on the circuit pattern of the host circuit board to form a coating of a predetermined size and shape, and then use an oven to dry at a predetermined temperature (for example, 150°C) for a predetermined time (for example, 30 minutes) In order to evaporate the solvent and form the sheet-shaped insulating soft magnetic film, the thickness of the insulating soft magnetic film is 100 μm ~2.6 mm; preferably, the thickness of the insulating soft magnetic film is 100 μm ~300 μm . Please refer to FIG. 2 together. In particular, the insulating soft
本創作之使用該絕緣軟磁油墨所製作的該絕緣軟磁膜的效果評估與測試: The effect evaluation and test of the insulating soft magnetic film made by using this insulating soft magnetic ink in this creation:
該絕緣軟磁膜係藉由成膜性測試以評估成膜性;該絕緣軟磁膜係藉由表面電阻量測以評估該絕緣軟磁膜係是否為電氣絕緣;該絕緣軟磁膜係藉由吸波特性量測S11參數及S21參數以評估電磁波被該絕緣軟磁膜吸收的量。 The insulating soft magnetic film is evaluated by a film forming test to evaluate the film forming property; the insulating soft magnetic film is evaluated by surface resistance to assess whether the insulating soft magnetic film is electrically insulated; the insulating soft magnetic film is by absorbing baud The S11 and S21 parameters are measured to evaluate the amount of electromagnetic waves absorbed by the insulating soft magnetic film.
成膜性測試: Film formation test:
以目測法觀察該絕緣軟磁膜的表面:如果發現有龜裂現象,則判定為成膜性失敗並標示為「X」;如果沒有龜裂現象,但是表面有翹 曲,則判定為成膜性可接受並標示為「△」;如果沒有龜裂現象及沒有翹曲,呈現平坦且附著良好,則判定為成膜性良好並標示為「○」。 Observe the surface of the insulating soft magnetic film by visual inspection: if cracking is found, it is determined that the film formation has failed and marked as "X"; if there is no cracking, but the surface is warped If it is bent, it is judged that the film-forming property is acceptable and marked as "△"; if there is no cracking phenomenon and no warpage, it is flat and the adhesion is good, it is judged that the film-forming property is good and marked as "○".
表面電阻量測: Surface resistance measurement:
針對上述該絕緣軟磁膜施以四點探針測量方式進行測量該絕緣軟磁膜的表面電阻值,於該絕緣軟磁膜共測量5個點後取平均值為記錄的表面電阻值。當表面電阻值不小於1.0x109歐姆/平方(Ω/□)時,則判定為電氣絕緣並標示為「○」;當表面電阻值不小於1.0歐姆/平方(Ω/□)時,則判定為非電氣絕緣並標示為「X」,代表不符合該絕緣軟磁膜的電氣絕緣條件。 For the above-mentioned insulating soft magnetic film, a four-point probe measurement method is used to measure the surface resistance value of the insulating soft magnetic film, and the average value is measured as the recorded surface resistance value after measuring a total of 5 points on the insulating soft magnetic film. When the surface resistance value of not less than 1.0x10 9 ohms / square (Ω / □), it is determined that the electrically insulating and marked as "○"; When the surface resistance value is not less than 1.0 ohms / square (Ω / □), it is determined It is non-electrically insulated and marked as "X", which means that it does not meet the electrical insulation conditions of the soft magnetic film.
吸波特性量測: Measurement of wave absorption characteristics:
採用Keysight E-5071C網路分析儀用傳輸線連接2個角錐天線以頻率2~18GHz的電磁波頻段執行S21參數(或稱為透射係數)及S11參數(或稱為反射係數)的量測。其中,S11參數的量測是將2個角錐天線放置在該絕緣軟磁膜的同一側,以測得電磁波反射衰減值即為S11參數,該絕緣軟磁膜的厚度為2.6mm;後述表一中的實施例及比較例中所測得的S11參數為負數,負數代表電磁波被吸收,將該S11參數達到最大值的頻率值(GHz)及此時的S11參數值(dB)的絕對值紀錄於後述表一中。S21參數的量測是將2個角錐天線分別放置在該絕緣軟磁膜的相反側,以測得電磁波各頻率透射衰減值即為S21參數,該絕緣軟磁膜的厚度為1.0mm;同樣地,後述表一中的實施例及比較例中所測得的S21參數為負數,負數代表電磁波被吸收,將該頻段的S21參數的絕對值的最大值與最小值紀錄於後述表一中。S11參數為負數,負數代表電磁波被吸收,因此S11參數絕對值的數值愈大,表 示電磁波被該絕緣軟磁膜吸收的量愈大,也表示電磁波被該絕緣軟磁膜反射衰減的程度愈大,該絕緣軟磁膜愈有效地吸收電磁波,消除所受的電磁干擾;同樣地,S21參數為負數,負數代表電磁波被吸收,因此S21參數絕對值中的最大值的數值愈大,也表示該頻段電磁波被該絕緣軟磁膜屏蔽衰減的程度愈大,該絕緣軟磁膜越有效地屏蔽所受的電磁干擾。當S21參數中的絕對值中的最大值小於8dB時,則判定該絕緣軟磁膜屏蔽電磁波的能力差並標示為「X」;當S21參數中的絕對值的最大值大於或等於8dB並小於13.5dB時,則判定該絕緣軟磁膜屏蔽電磁波的能力為可接受並標示為「△」;當S21參數中的絕對值的最大值大於或等於13.5dB時,則判定該絕緣軟磁膜屏蔽電磁波的能力為良好並標示為「○」。 The Keysight E-5071C network analyzer is used to connect two pyramid antennas with a transmission line to perform the measurement of the S21 parameter (or transmission coefficient) and S11 parameter (or reflection coefficient) at the electromagnetic wave frequency range of 2-18 GHz. Among them, the measurement of the S11 parameter is to place two pyramid antennas on the same side of the insulating soft magnetic film, to measure the electromagnetic wave reflection attenuation value is the S11 parameter, the thickness of the insulating soft magnetic film is 2.6mm; The measured S11 parameters in the examples and comparative examples are negative numbers, and the negative numbers represent the electromagnetic waves absorbed. The frequency value (GHz) at which the S11 parameter reaches the maximum value and the absolute value of the S11 parameter value (dB) at this time are described later Table 1. The measurement of the S21 parameter is to place two pyramid antennas on opposite sides of the insulating soft magnetic film, and the transmission attenuation value of each frequency of the electromagnetic wave is measured as the S21 parameter, and the thickness of the insulating soft magnetic film is 1.0 mm; similarly, described later The measured S21 parameters in the examples and comparative examples in Table 1 are negative numbers. The negative numbers represent the electromagnetic waves absorbed. The maximum and minimum absolute values of the S21 parameters in this frequency band are recorded in Table 1 described later. The S11 parameter is a negative number, and the negative number represents the electromagnetic wave is absorbed, so the larger the absolute value of the S11 parameter, the table Shows that the greater the amount of electromagnetic waves absorbed by the insulating soft magnetic film, the greater the degree of electromagnetic wave reflection and attenuation by the insulating soft magnetic film. The more effectively the insulating soft magnetic film absorbs electromagnetic waves and eliminates the electromagnetic interference; similarly, the S21 parameter It is a negative number. The negative number represents the electromagnetic wave is absorbed. Therefore, the greater the maximum value of the absolute value of the S21 parameter, the greater the attenuation of the electromagnetic wave in this frequency band by the insulating soft magnetic film. The more effectively the insulating soft magnetic film shields the Electromagnetic interference. When the maximum value of the absolute value in the S21 parameter is less than 8dB, it is judged that the insulating soft magnetic film has a poor ability to shield electromagnetic waves and is marked as "X"; when the maximum value of the absolute value in the S21 parameter is greater than or equal to 8dB and less than 13.5 When dB, the ability of the insulating soft magnetic film to shield electromagnetic waves is acceptable and marked as "△"; when the maximum value of the absolute value in the S21 parameter is greater than or equal to 13.5dB, the ability of the insulating soft magnetic film to shield electromagnetic waves is determined Is good and marked as "○".
總體評估結果: Overall evaluation results:
在同一實施例或比較例中,成膜性測試、表面電阻量測及吸波特性量測中的任一者如果出現「X」,則總體評估結果為不良,並記錄為「X」;成膜性測試、表面電阻量測及吸波特性量測中的任一者如果出現「△」,則總體評估結果為可接受,並記錄為「△」;成膜性測試、表面電阻量測及吸波特性量測中,如果皆出現「○」,則總體評估結果為良好,並記錄為「○」。 In the same embodiment or comparative example, if "X" appears in any of the film-forming test, surface resistance measurement, and absorption characteristic measurement, the overall evaluation result is bad, and is recorded as "X"; If "△" appears in any of the film-forming test, surface resistance measurement and wave-absorbing characteristic measurement, the overall evaluation result is acceptable and recorded as "△"; film-forming test, surface resistance During the measurement and the measurement of the absorption characteristics, if "○" appears, the overall evaluation result is good and recorded as "○".
依據前述本創作之該絕緣軟磁油墨的製造方法,先調製成如下述表1中所記載之各實施例(實施例1~實施例9)所分別對應組成的該絕緣軟磁油墨,再藉由該絕緣軟磁膜的製備方法製備該絕緣軟磁膜,接著再進行該絕緣軟磁膜的效果評估與測試,並將結果紀錄於表一。其中,表一中的該絕緣軟磁顆粒其芯部為鐵矽鉻合金,而殼部為磷酸鹽皮膜;該第一樹脂 為酚醛環氧樹脂;該第二樹脂為苯酚與甲醛縮水甘油醚的聚合物;該溶劑為乙二醇丁醚醋酸酯。表一中另外記載了比較例1及比較例2,比較例1及比較例2係仿造該絕緣軟磁油墨的製造方法、該絕緣軟磁膜的製備方法及該絕緣軟磁膜的效果評估與測試,其中除了比較例2係以導電顆粒取代各實施例的絕緣軟磁顆粒之外,其餘相同之處就不再重複說明。 According to the manufacturing method of the insulating soft magnetic ink described above, the insulating soft magnetic ink corresponding to the respective embodiments (Example 1 to Example 9) described in Table 1 below is first prepared, and then the Preparation method of insulating soft magnetic film The insulating soft magnetic film is prepared, and then the effect evaluation and testing of the insulating soft magnetic film are performed, and the results are recorded in Table 1. Among them, the core of the insulating soft magnetic particles in Table 1 is iron-silicon-chromium alloy, and the shell is a phosphate film; the first resin It is a phenolic epoxy resin; the second resin is a polymer of phenol and formaldehyde glycidyl ether; the solvent is ethylene glycol butyl ether acetate. Table 1 additionally describes Comparative Example 1 and Comparative Example 2. Comparative Example 1 and Comparative Example 2 are the manufacturing method of imitating the insulating soft magnetic ink, the manufacturing method of the insulating soft magnetic film, and the evaluation and testing of the effect of the insulating soft magnetic film, in which Except that Comparative Example 2 replaces the insulating soft magnetic particles of the embodiments with conductive particles, the same points will not be repeated.
由表一顯示,總體評估結果為:比較例1及2總體評估結果為不良;實施例1~5總體評估結果為可接受;實施例6~9總體評估結果為良好。 As shown in Table 1, the overall evaluation results are: the overall evaluation results of Comparative Examples 1 and 2 are bad; the overall evaluation results of Examples 1 to 5 are acceptable; and the overall evaluation results of Examples 6 to 9 are good.
比較例2為習知電磁干擾屏蔽層,在高頻段的電磁波下,電磁干擾屏蔽層顯示S11參數的絕對值幾乎為零(0.56dB),這表示其為將電磁波全反射而不具吸收電磁波的效果,也表示電磁波不但完全沒有被電磁干擾屏蔽層衰減,反而因為接近於將電磁波全反射而可能形成了新的電磁干擾。實施例1~9的該絕緣軟磁膜的S11參數的絕對值則至少為8.39dB(實施例1)以上,甚至高達20.69dB(實施例6),表示電磁波被實施例1~9的該絕緣軟磁膜反射衰減的程度大,實施例1~9的該絕緣軟磁膜能有效地消除所受的電磁干擾,因此也不會產生新的電磁干擾。 Comparative example 2 is a conventional electromagnetic interference shielding layer. Under high-frequency electromagnetic waves, the electromagnetic interference shielding layer shows that the absolute value of the S11 parameter is almost zero (0.56dB), which means that it is a total reflection of electromagnetic waves without the effect of absorbing electromagnetic waves. It also means that the electromagnetic wave is not attenuated by the electromagnetic interference shielding layer at all, but because it is close to total reflection of the electromagnetic wave, new electromagnetic interference may be formed. The absolute value of the S11 parameter of the insulating soft magnetic film of Examples 1-9 is at least 8.39dB (Example 1) or even as high as 20.69dB (Example 6), indicating that the electromagnetic wave is affected by the insulating soft magnetic of Examples 1-9 The degree of film reflection attenuation is large. The insulating soft magnetic films of Examples 1 to 9 can effectively eliminate the electromagnetic interference received, so no new electromagnetic interference will be generated.
再者,比較例2的電磁干擾屏蔽層及比較例1的絕緣軟磁膜的表面有龜裂現象,龜裂之處容易造成電磁波洩漏,有可能導致電磁干擾防制的失敗風險。實施例1~9的該絕緣軟磁膜則都沒有龜裂,因此減少了電磁波洩漏的風險。 In addition, the electromagnetic interference shielding layer of Comparative Example 2 and the insulating soft magnetic film of Comparative Example 1 have cracks on the surface, and the cracks are likely to cause electromagnetic wave leakage, which may lead to the risk of failure of electromagnetic interference prevention. The insulating soft magnetic films of Examples 1 to 9 have no cracks, thus reducing the risk of electromagnetic wave leakage.
另外,比較例2的表面電阻值為1x100Ω/□,其具有導電的性質,因此當直接覆蓋在主機電路板上的電路圖案上時,會造成電路的短路而導致主機電路板報廢。實施例1~9的該絕緣軟磁膜的表面電阻值至少為5x109Ω/□,因此可以直接覆蓋在主機電路板上的電路圖案而不會造成電路的短路。 In addition, the surface resistance value of Comparative Example 2 is 1x10 0 Ω/□, which has conductive properties, so when directly covering the circuit pattern on the host circuit board, it will cause a short circuit of the circuit and cause the host circuit board to be scrapped. The surface resistance value of the insulating soft magnetic film of Examples 1 to 9 is at least 5× 10 9 Ω/□, so the circuit pattern on the host circuit board can be directly covered without causing a short circuit of the circuit.
當然,由表一的實施例1~9的S11參數可以得知,該絕緣軟磁膜依複數個該絕緣軟磁顆粒的含量不同,可在不同頻率(實施例7~9的2.0GHz至實施例1的5.60GHz)顯現反射衰減效果,因此不同複數個該絕緣軟磁顆粒含量的該絕緣軟磁油墨及使用該絕緣軟磁油墨所製作的該絕緣軟磁膜,具有吸收電磁波的功效。 Of course, it can be known from the S11 parameters of Examples 1-9 in Table 1 that the insulating soft magnetic film has different contents of the insulating soft magnetic particles, and can be at different frequencies (from 2.0 GHz in Examples 7-9 to Example 1). 5.60GHz) exhibits a reflection attenuation effect. Therefore, the insulating soft magnetic ink with different contents of the insulating soft magnetic particles and the insulating soft magnetic film made using the insulating soft magnetic ink have the effect of absorbing electromagnetic waves.
特別說明的是,前述之該絕緣軟磁膜的製備方法係將塗層中的該絕緣軟磁油墨之該溶劑揮發以形成該絕緣軟磁膜,因此係將表一中各實施例移除該溶劑後,計算出該絕緣軟磁膜中複數個該絕緣軟磁顆粒、該第一樹脂及該第二樹脂的占比並列於下述表二。 In particular, the aforementioned preparation method of the insulating soft magnetic film evaporates the solvent of the insulating soft magnetic ink in the coating to form the insulating soft magnetic film, so after removing the solvent from the embodiments in Table 1, The proportions of the plurality of insulating soft magnetic particles, the first resin and the second resin in the insulating soft magnetic film are calculated and listed in Table 2 below.
基於表二,以複數個該絕緣軟磁顆粒、該第一樹脂及該第二樹脂為100wt%為計量,該絕緣軟磁膜中係包含:55.56~95.74wt%的複數個該絕緣軟磁顆粒、3.06~33.33wt%的該第一樹脂及1.01~11.11wt%的該第二樹脂。換言之,以複數個該絕緣軟磁顆粒及該樹脂層為100wt%為計量,該絕 緣軟磁膜中係包含:55.56~95.74wt%的複數個該絕緣軟磁顆粒及4.07~44.44wt%的該樹脂層。 Based on Table 2, the plurality of insulating soft magnetic particles, the first resin and the second resin are measured at 100 wt%. The insulating soft magnetic film contains: 55.56~95.74 wt% of the plural insulating soft magnetic particles, 3.06~ 33.33wt% of the first resin and 1.01-11.11wt% of the second resin. In other words, taking a plurality of the insulating soft magnetic particles and the resin layer as 100% by weight, the absolute The edge soft magnetic film contains 55.56~95.74wt% of the plurality of insulating soft magnetic particles and 4.07~44.44wt% of the resin layer.
以上所述,僅為本創作較佳的實施例,當不能以此限定本創作之實施範圍。凡依本創作申請專利範圍及新型說明書內容所做之簡單等效的修飾與變化,仍應屬本創作專利涵蓋之範圍。 The above is only the preferred embodiment of this creation, and it should not be used to limit the scope of implementation of this creation. Any simple and equivalent modifications and changes made in accordance with the scope of the patent application for this creation and the content of the new specification shall still fall within the scope of this patent for creation.
100:絕緣軟磁膜 100: Insulated soft magnetic film
2:樹脂層 2: resin layer
3:電路板 3: circuit board
31:電路圖案 31: Circuit pattern
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